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IRGB14C40LPBF
IGBT, 20 A, 1.75 V, 125 W, 430 V, TO-220AB, 3 Pins
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- Manufacturer: INFINEON
- Product type: Single IGBTs
- No. of Pins: 3Pins
- Power Dissipation: 125W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-220AB
- Operating Temperature Max: 175°C
- Continuous Collector Current: 20A
- Collector Emitter Voltage Max: 430V
- Collector Emitter Saturation Voltage: 1.75V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 1.02 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**==> picture [103 x 110] intentionally omitted <==** **----- Start of picture text -----**<br> Collector<br>-------41,<br>] ]<br>] |<br>] |<br>Gate ] R1 ||<br>R2<br>] |<br>| |<br>| |<br>i? ae<br>Emitter<br>**----- End of picture text -----**<br> ## **Absolute Maximum Ratings** |**Absolute Maximum Ratings**|**Absolute Maximum Ratings**<br>**Parameter**|**Max**|**Unit**|**Condition**| |---|---|---|---|---| |VCES|Collector-to-Emitter Voltage|Clamped|V|RG= 1Kohm| |IC@TC= 25°C|Continuous Collector Current|20|A|VGE= 5V| |IC@TC= 110°C|Continuous Collector Current|14|A|VGE= 5V| |IG|Continuous Gate Current|1|mA|| |IGp|Peak Gate Current|10|mA|tPK= 1ms,f = 100Hz| |VGE|Gate-to-Emitter Voltage|Clamped|V|| |PD @TC= 25°C|Maximum Power Dissipation|125|W|| |PD @T = 110°C|Maximum Power Dissipation|54|W|| |TJ|OperatingJunction and|- 40 to 175|°C|| |TSTG|Storage Temperature Range|- 40 to 175|°C|| |VESD|Electrostatic Voltage|6|KV|C = 100pF,R = 1.5Kohm| |IL|Self-clamped Inductive SwitchingCurrent|11.5|A|L = 4.7mH,T = 25°C| ## **Thermal Resistance** ||**Parameter**|**Min**|**Typ**|**Max**|**Unit**| |---|---|---|---|---|---| |RθJC|Thermal Resistance,Junction-to-Case|||1.2|°C/W| |RθJA|Thermal Resistance,Junction-to-Ambient|||40|| ||(PCB Mounted,SteadyState)||||| |ZθJC|Transient Thermal Impedance,Juction-to-Case(Fig.11)||||| **Off-State Electrical Charasteristics @ TJ = 25°C** (unless otherwise specified) |~~PpOT—CsSCSCSCSCSC“C‘isé‘iSC“‘E~~<br>||~~OT—CsSCSCSCSCSC“C‘isé‘iSC“‘E~~<br>|~~OT—CsSCSCSCSCSC“C‘isé‘iSC“‘E~~|(unless otherwise specified)<br>~~OT—CsSCSCSCSCSC“C‘isé‘iSC“‘E~~|(unless otherwise specified)<br>~~OT—CsSCSCSCSCSC“C‘isé‘iSC“‘E~~|(unless otherwise specified)<br>~~OT—CsSCSCSCSCSC“C‘isé‘iSC“‘E~~|(unless otherwise specified)<br>~~OT—CsSCSCSCSCSC“C‘isé‘iSC“‘E~~|~~OT—CsSCSCSCSCSC“C‘isé‘iSC“‘E~~| |---|---|---|---|---|---|---|---| |~~PpOT—CsSCSCSCSCSC“C‘isé‘iSC“‘E~~<br>||**Parameter**<br>~~OT—CsSCSCSCSCSC“C‘isé‘iSC“‘E~~<br>|**Min**<br>~~OT—CsSCSCSCSCSC“C‘isé‘iSC“‘E~~|(unless otherwise specified)<br>**Typ**<br>~~OT—CsSCSCSCSCSC“C‘isé‘iSC“‘E~~|(unless otherwise specified)<br>**Max**<br>~~OT—CsSCSCSCSCSC“C‘isé‘iSC“‘E~~|(unless otherwise specified)<br>**Unit**<br>~~OT—CsSCSCSCSCSC“C‘isé‘iSC“‘E~~|(unless otherwise specified)<br>**Conditions**<br>~~OT—CsSCSCSCSCSC“C‘isé‘iSC“‘E~~|**Fig**<br>~~OT—CsSCSCSCSCSC“C‘isé‘iSC“‘E~~| |BVCES<br>~~Pp~~<br>|Collector-to-Emitter Breakdown Voltage<br><br> ~~a~~<br>~~a~~|370<br><br>~~ee~~<br>~~Ge~~|400<br><br>~~ee ~~<br>~~Ge~~|430<br><br> ~~eG~~<br>~~GQ~~|V<br><br>~~eG~~<br>~~GQ~~|RG= 1K ohm, IC=7A, VGE= 0V<br><br>~~eG~~<br>~~GQ~~|~~GQ~~| |BVGES|Gate-to-Emitter Breakdown Voltage<br>~~a~~|10<br>~~Ge~~|12<br>~~Ge~~|~~GQ~~|V<br>~~GQ~~|IG=2m A<br>~~GQ~~|~~GQ~~| |ICES|Collector-to-Emitter Leakage Current<br>~~a~~|~~Ge ~~<br>~~a~~|~~Ge~~<br>~~ee~~|15<br>~~GQ~~<br>~~ee~~|µA<br>~~GQ~~<br>~~ee~~|RG=1K ohm, VCE= 250V<br>~~GQ~~<br>~~ee~~|~~GQ~~| |||~~a~~<br>~~Gs~~|~~ee~~<br>~~Gs~~|100<br>~~ee~~<br>~~I~~|µA<br>µA<br>~~ee~~<br>~~(~~|RG=1K ohm, VCE= 250V, TJ=150°C<br>~~ee~~<br>~~(~~|| |BVCER|Emitter-to-Collector Breakdown Voltage<br>~~es~~|24<br>~~a ~~<br>~~es~~<br>~~Gs~~|28<br> ~~ee~~<br>~~es~~<br>~~Gs~~<br>~~Ge~~|~~ee ~~<br>~~es~~<br>~~I~~<br>~~Ge~~|µA<br>V<br> ~~ee~~<br>~~es~~<br>~~(~~<br>~~QO~~|IC=-10m A<br>~~ee~~<br>~~es~~<br>~~(~~<br>~~QO~~|~~es~~| |R1|Collector Breakdown Voltage<br>Gate Series Resistance<br>~~Ge~~|~~Gs~~<br>~~Ge~~|75<br>~~Gs ~~<br>~~Ge~~<br>~~Ge~~|~~I ~~<br>~~Ge~~<br>~~Ge~~|ohm<br> ~~(~~<br>~~Ge~~<br>~~QO~~|~~(~~<br>~~Ge~~<br>~~QO~~|~~Ge~~| |R2|Gate-to-Emitter Resistance<br>~~po~~|10<br>~~po~~|20<br>~~Ge~~<br>~~po~~|30<br>~~Ge ~~<br>~~po~~|K ohm<br> ~~QO~~<br>~~po~~|~~QO~~<br>~~po~~|~~po~~| |~~fT~~<br>~~[|~~|**Parameter**<br>~~[|~~<br>~~TTTTrt™~—COTTTTTTTCCOT~~|**Min**<br>~~TTTTrt™~—COTTTTTTTCCOTSDT~~|(unless otherwise specified)<br>**Typ**<br>~~SDT~~|(unless otherwise specified)<br>**Max**<br>~~SDT~~|(unless otherwise specified)<br>**Unit**<br>~~SDT~~|(unless otherwise specified)<br>**Conditions**<br>~~SDT~~|**Fig**<br>~~SDT~~| |---|---|---|---|---|---|---|---| |VCE(on)<br>~~fT~~<br>~~[|~~|Collector-to-Emitter Saturation<br>Voltage<br>~~[|~~<br>~~TTTTrt™~—COTTTTTTTCCOT~~|~~TTTTrt™~—COTTTTTTTCCOTSDT~~|1.2<br>~~SDT~~|1.40<br>~~SDT~~|V<br>~~SDT~~|IC= 7A, VGE= 4.5V<br>~~SDT~~|1<br>2<br>4<br>~~SDT~~| ||||1.35|1.55||IC= 10A, VGE= 4.5V|| ||||1.35|1.55||IC= 10A, VGE= 4.5V, TC=-40<br>oC|| ||||1.5|1.7||IC= 14A, VGE= 5.0V, TC=-40<br>oC|| ||||1.55|1.75||IC =14A, VGE =5.0V|| ||||1.6|1.8||IC= 14A, VGE= 5.0V, TC=150<br>oC|| |VGE(th)|Gate Threshold Voltage|1.3|1.8|2.2|V|VCE= VGE, IC= 1 m A, TC=25<br>oC|3, 5<br>8| |||0.75||1.8||, I= 1 m A, T<br>VCE= VGE, IC= 1 m A, TC=150<br>oC|| |gfs<br>~~a~~|Transconductance<br>~~a~~|10<br>~~eG~~|15<br>~~eG~~|19<br>~~QO GO~~|S<br>~~GO~~|VCE= 25V, IC= 10A, TC=25<br>oC<br>~~GO~~|| |IC<br>~~a ~~<br>a|Collector Current<br> ~~a~~<br>~~Ge~~|20<br>~~eG~~<br>~~Ge Oe~~|~~eG~~<br>~~Oe Ds~~|~~QO GO~~<br>~~Ds~~|A<br>~~GO~~|VCE= 10V, VGE= 4.5V<br>~~GO~~|| **Switching Characteristics @ TJ = 25°C** (unless otherwise specified) |**Switching Characteristics @ TJ = 25°C**<br>~~PT~~|**Switching Characteristics @ TJ = 25°C**(unless otherwise specified)<br>**Parameter**<br>~~PT~~<br>~~TTTTTr™~—TTTTTTCTCOT~~|(unless otherwise specified)<br>**Min**<br>~~TTTTTr™~—TTTTTTCTCOTDT~~|(unless otherwise specified)<br>**Typ**<br>~~DT~~|(unless otherwise specified)<br>**Max**<br>~~DT~~|(unless otherwise specified)<br>**Unit**<br>~~DT~~|(unless otherwise specified)<br>**Conditions**<br>~~DT~~|**Fig**<br>~~DT~~| |---|---|---|---|---|---|---|---| |Qg<br>~~PT~~|Total Gate charge<br>~~PT~~<br>~~TTTTTr™~—TTTTTTCTCOT~~|~~TTTTTr™~—TTTTTTCTCOTDT~~|27<br>~~DT~~|~~DT~~|nC<br>~~DT~~|IC= 10A, VCE=12V, VGE=5V<br>~~DT~~|7<br>15<br>~~DT~~| |g<br>Qge|Total Gate charge<br>Gate-Emitter Charge||2.5|||= 10A, V=12V, V<br>IC= 10A, VCE=12V, VGE=5V|| |ge<br>Qgc|Emitter Charge<br>Gate - Collector Charge||10|||= 10A, V=12V, V<br>IC= 10A, VCE=12V, VGE=5V|| |td(on)|Turn-on delay time|0.6|0.9|1.35|µs|VGE=5V, RG=1K ohm, L=1mH, VCE=14V|12<br>14| |(on)<br>tr|Rise time|1.6|2.8|4||=5V, R=1K ohm, L=1mH, V<br>VGE=5V, RG=1K ohm, L=1mH, VCE=14V|| |td(off)|Turn - off delay time|3.7|6|8.3||=5V, R=1K ohm, L=1mH, V<br>VGE=5V, RG=1K ohm, L=1mH, VCE=300V|| |Cies|Input Capacitance||550|825|pF|VGE=0V, VCE=25V, f=1M H z|6| |Coes|Input Capacitance<br>Output Capacitance||100|150||=0V, V=25V, f=1M H z<br>VGE=0V, VCE=25V, f=1M H z|| |Cres|Output Capacitance<br>Reverse Transfer Capacitance||12|18||=0V, V=25V, f=1M H z<br>VGE=0V, VCE=25V, f=1M H z|| |IL|Self-Clamped<br>Inductive Switching Current|25|||A|L=0.7m H, TC=25°C|9<br>10<br>13<br>14| |||15.5||||L=2.2m H, TC=25°C|| |||11.5||||L=4.7m H, TC=25°C|| |||16.5||||L=1.5m H, TC=150°C|| |||7.5||||L=4.7m H, TC=150°C|| |||6||||L=8.7m H, TC=150°C|| |tSC|Short Circuit Withstand Time||||µs|TJ=150<br>oC,<br>VCC= 16V, L = 10µH<br>RG =1K ohm, VGE =5V|14| |||120|||||| ||||||||| **==> picture [134 x 20] intentionally omitted <==** **----- Start of picture text -----**<br> Fig.1 - Typ. Output Characteristics<br>TJ=25°C<br>**----- End of picture text -----**<br> **==> picture [134 x 20] intentionally omitted <==** **----- Start of picture text -----**<br> Fig.2 - Typ. Output Characteristics<br>TJ=125°C<br>**----- End of picture text -----**<br> **==> picture [455 x 552] intentionally omitted <==** **----- Start of picture text -----**<br> 60 60<br>VGE = 10 V<br>VGE = 5.0V VGE = 10 V<br>50 V GE = 4.5V fo 50 VGE = 5.0V J<br>VGE = 4.0V VGE = 4.5V<br>VGE = 3.7V VGE = 4.0V<br>40 40 VGE = 3.7V<br>30 30<br>ye [A<br>20 20<br>fE £-<br>10 10<br>fo ff<br>0 fo 0 04nnee<br>0 1 2 3 4 5 6 0 1 2 3 4 5 6<br>VCE (V) VCE (V)<br>Fig.3 - Transfer Characteristics Fig.4 - Typical VCE vs TJ<br>VCE=20V; tp=20µs VGE=4.5V<br>100 1.6<br>TJ = 25°C<br>90<br>TJ = 125°C<br>hf 1.5<br>80<br>IC = 10A<br>70<br>1.4<br>fe<br>60<br>ff<br>50 1.3<br>fe<br>40<br>1.2<br>ft<br>30<br>fe<br>20<br>1.1<br>IC = 7A<br>10<br>0 f eF 1.0 at<br>0 2 4 6 8 10 -50 0 50 100 150 200<br>VGE (V) TJ (°C)<br> ( A )C ( A )C<br>I I<br> ( A ) ( V )<br>C E C E<br>I V<br>**----- End of picture text -----**<br> **==> picture [458 x 577] intentionally omitted <==** **----- Start of picture text -----**<br> Fig.5 - Typical VGE(th) vs TJ Fig.6 - Typ. Capacitance vs VCE<br>IC=1mA VGE=0V; VCE=25V; f=1MHz<br>2.2 1000<br>2.0 C ies<br>PKB<br>1.8 100<br>C oes<br>1.6 eee [eee] \<br>Vl<br>1.4 10<br>||ill<br>C res<br>1.2 ian<br>ee<br>1.0 1 all<br>-50 0 50 100 150 200 1 10 100<br>TJ (°C) VCE (V)<br>Fig.7 - Typ. Gate Charge vs VGE Fig.8 - Typical VCE vs VGE<br>IC=10A; VCE=12V; VGE=5V<br>20<br>5.55.04.5 Pfanne| fd 1816 TPTTP<br>4.0 A 14 TP<br>3.5 ee ae 12 TP<br>3.0<br>| | Yi | 10 antl<br>IC= 7A; 125°C<br>2.5 Po ff | | 8 aati I C = 7A; 25°C<br>2.0 IC=10A; 125°C<br>6 IC=10A; 25°C<br>1.5<br>4<br>1.0 feet | ft | ,<br>0.5 | a a 2 Wt<br>0.0 Pf | ff 0 ee eee<br>0 5 10 15 20 25 30 2.5 3 3.5 4 4.5<br>QG, Total Gate Charge (nC) VGE (V)<br> ( V )<br>G E ( t h )<br>V<br>C a p a c i t a n c e ( p F )<br> ( V ) ( V )<br>G E C E<br>V V<br>**----- End of picture text -----**<br> **==> picture [454 x 561] intentionally omitted <==** **----- Start of picture text -----**<br> Fig.9 - Self-clamp Avalance Current vs Fig.10 - Self-clamp Avalance Current<br>Inductance @ 25°C vs Inductance @ 150°C<br>40 20<br>18<br>35<br>16<br>PN \<br>30<br>14<br>25 ae Typical 12 \\ Typical<br>KN 10 WO<br>20<br>8 Minimum<br>aw VN<br>15 Minimum<br>6<br>~~ apens<br>10 SEPP<br>4<br>0 1 2 3 4 5<br>0 2 4 6 8 10<br>Inductance (mH) Inductance (mH)<br>Fig.11 - Transient Thermal Impedance, Junction-to-Case<br> 10<br>P| TT TE<br> 1 aee<br>D = 0.50<br>0.20<br>0.10 PDM<br>0.1<br>0.05 t1<br>0.02 t 2<br>0.01 SINGLE PULSE Notes:<br>(THERMAL RESPONSE) 1. Duty factor D = t / t1 2<br>att e 2. Peak T J = P DM x Z thJC + TC<br>0.01 i f Ch<br>0.00001 0.0001 0.001 0.01 0.1 1<br>t , Rectangular Pulse Duration (sec)1<br>O p e n - s e c o n d a r y C u r r e n t ( A )<br>O p e n - s e c o n d a r y C u r r e n t ( A )<br>(Z )thJC<br>Thermal Response<br>**----- End of picture text -----**<br> Fig.12 - Switching Waveform for Time Measurement VGE= 5V; RG= 1KΩ; L= 1mH; VCE= 14V; used circuit in Fig.14 **==> picture [444 x 528] intentionally omitted <==** **----- Start of picture text -----**<br> 450 8<br>400 VClamp 7<br>350 6<br>300 Vcl (measured) 5<br>250 4<br>200 VGE 3<br>150 2<br>100 1<br>t d (o f f )<br>50 0<br>0 -1<br>t r<br>-50 -2<br>-14 -10 -6 -2 2 6 10 14<br>t (µs)<br>Fig.13 - Self-clamped Inductive Switching Waveform<br>L=4.7mH; TC=25°C; used circuit in Fig.14<br>12 500<br>10 I CE V clamp 400<br>8 300<br>6 200<br>4 100<br>2 0<br>0 -100<br>-2.E-05 -1.E-05 0.E+00 1.E-05 2.E-05 3.E-05 4.E-05 5.E-05 6.E-05<br>time<br> ( V )<br> ( V )<br>G E<br>c l a m p<br>V<br>V<br> ( V )<br> ( A )<br>C E<br>I c l a m p<br>V<br>**----- End of picture text -----**<br> **==> picture [146 x 190] intentionally omitted <==** **----- Start of picture text -----**<br> 0.47 Ω<br>L<br>1KΩ<br>D.U.T.<br>Ice<br>**----- End of picture text -----**<br> **==> picture [415 x 79] intentionally omitted <==** **----- Start of picture text -----**<br> L<br>VCC<br>DUT<br>0<br>1K<br>**----- End of picture text -----**<br> ## Dimensions are shown in millimeters (inches) **==> picture [292 x 161] intentionally omitted <==** **----- Start of picture text -----**<br> T HIS IS AN IR F 530S WIT H PAR T NU MB E R<br>L OT CODE 8024 INT E R NAT IONAL cS<br>AS S E MB LE D ON WW 02, 2000 R E CT IF IE R F 530S<br>IN T H E AS S E MB LY LINE "L" L OGO TeaR 002.<br>80 24 DAT E CODE<br>pos ition indicates "Lead-F ree"Note: "P" in as s embly line AS S E MB LY Wu YE AR 0 = 2000<br>LOT CODE iU ? i i? Li WE E K 02LINE L<br>PAR T NU MB E R<br>INT E R NAT IONAL cS<br>R E CT IF IE R F 530S<br>L OGO TeaR80 002A24 DAT E CODE<br>P = DE S IGNAT E S LE AD-F R E E<br>AS S E MB L Y Ju<br>PR ODUCT (OPT IONAL)<br>LOT CODE i tt o7; YE AR 0 = 2000<br>WE E K 02<br>A = AS S E MB LY S IT E CODE<br>**----- End of picture text -----**<br> ## TO-262 Package Outline Dimensions are shown in millimeters (inches) ## TO-262 Part Marking Information **==> picture [352 x 179] intentionally omitted <==** **----- Start of picture text -----**<br> E XAMPLE : T HIS IS AN IRL 3103L<br>LOT CODE 1789 PART NUMBE R<br>AS S E MB LE D ON WW 19, 1997IN T HE AS S EMB LY LINE "C" INT E RNAT IONALRE CT IF IE RLOGO ooTeaRIRL3103L719C<br>Note: "P" in as s embly line 17 89 DAT E CODE<br>pos ition indicates "Lead-Free" AS S E MBL Y YE AR 7 = 1997<br>LOT CODE WEE K 19<br>L INE C<br>OR<br>PART NUMB ER<br>INT E RNAT IONAL a<br>RE CT IF IER IRL3103L<br>L OGO IeaRP7igA<br>DAT E CODE<br>17 89<br>P = DE S IGNAT ES LEAD-FRE E<br>AS S E MB LY PRODUCT (OPT IONAL)<br>LOT CODE YE AR 7 = 1997<br>WE E K 19<br>A = AS S E MB LY S IT E CODE<br>**----- End of picture text -----**<br> Dimensions are shown in millimeters (inches) **==> picture [415 x 224] intentionally omitted <==** **----- Start of picture text -----**<br> 10.54 (.415) 3.78 (.149) - B -<br>2.87 (.113) 10.29 (.405) 3.54 (.139) 4.69 (.185)<br>2.62 (.103) - A - 4.20 (.165) 1.32 (.052)<br>1.22 (.048)<br>6.47 (.255)<br>_ 4 6.10 (.240) g<br>meCy FC ~<br>15.24 (.600)<br>14.84 (.584)<br>LEAD ASSIGNMENTS<br>1.15 (.045) LEAD ASSIGNMENTS<br> MIN HEXFET 1 - GATE IGBTs, CoPACK<br>1 2 3 1- GATE 2 - DRAIN 1- GATE<br>2- DRAIN 3 - SOURCE 2- COLLECTOR<br>3- SOURCE 4 - DRAIN 3- EMITTER<br>| [arerT 4- DRAIN 4- COLLECTOR<br>14.09 (.555)<br>13.47 (.530) 4.06 (.160)<br>3.55 (.140)<br>3X [0.93 (.037)] 0.69 (.027) 3X [0.55 (.022)] 0.46 (.018)<br>3X alt [1.40 (.055)] |<br>1.15 (.045) 0.36 (.014) M B A M<br>2.92 (.115)<br>2.64 (.104)<br>[Ft 2.54 (.100) - T<br>2X<br>NOTES:<br>**----- End of picture text -----**<br> - 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. - 2 CONTROLLING DIMENSION : INCH 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS. EXAMPLE: **==> picture [403 x 104] intentionally omitted <==** **----- Start of picture text -----**<br> T HIS IS AN IRF1010<br>LOT CODE 1789<br>PART NUMBER<br>ASS EMBLED ON WW 19, 1997 INTERNATIONAL<br>IN THE ASSEMBLY LINE "C" RECTIFIER<br>LOGO<br>Note: "P" in assembly line<br>position indicates "Lead-Free" DAT E CODE<br>YEAR 7 = 1997<br>ASSEMBLY<br>WEEK 19<br>LOT CODE<br>LINE C<br>**----- End of picture text -----**<br> Dimensions are shown in millimeters (inches) **==> picture [383 x 186] intentionally omitted <==** **----- Start of picture text -----**<br> TRR<br>1.60 (.063)<br>1.50 (.059)<br>1.60 (.063)<br>4.10 (.161)<br>3.90 (.153) 1.50 (.059) 0.368 (.0145)<br>0.342 (.0135)<br>FEED DIRECTION 1.85 (.073) 11.60 (.457)<br>1.65 (.065) 11.40 (.449) 24.30 (.957)<br>15.42 (.609)<br>23.90 (.941)<br>15.22 (.601)<br>ml TRL Le a RK<br>O00 0 [| )<br>1.75 (.069)<br>10.90 (.429) 1.25 (.049)<br>10.70 (.421) 4.72 (.136)<br>16.10 (.634) 4.52 (.178)<br>15.90 (.626)<br>FEED DIRECTION<br>**----- End of picture text -----**<br> **==> picture [375 x 182] intentionally omitted <==** **----- Start of picture text -----**<br> 13.50 (.532) 27.40 (1.079)<br>, 12.80 (.504) 23.90 (.941) OE<br>4<br>330.00 60.00 (2.362)<br>(14.173) MIN.<br> MAX.<br>30.40 (1.197)<br>NOTES : oo Ji MAX.<br>1. COMFORMS TO EIA-418.<br>2. CONTROLLING DIMENSION: MILLIMETER. 26.40 (1.039)24.40 (.961) Tt 4<br>3. DIMENSION MEASURED @ HUB.<br>3<br>**----- End of picture text -----**<br> 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. Data and specifications subject to change without notice. **IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 09/04 Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/
Updated at February 9, 2023
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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