IRGB10B60KDPBF
IGBT, 22 A, 2.2 V, 104 W, 600 V, TO-220AB, 3 Pins
- Manufacturer: INFINEON
- Product type: Single IGBTs
- DC Collector Current:22A; Collector Emitter Saturation Voltage Vce(on):2.2V; Power Dissipation Pd:104W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-220AB; No. of Pins:3Pins;
- No. of Pins: 3Pins
- Product Range: -
- Power Dissipation: 104W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-220AB
- Operating Temperature Max: 150°C
- Continuous Collector Current: 22A
- Collector Emitter Voltage Max: 600V
- Collector Emitter Saturation Voltage: 2.2V
| Delivery and price | |
|---|---|
| Units per pack | 2500 |
| Price | 1.42 € |
| Current stock | 10+ |
| Lead time | 30 days |
## IRGB10B60KDPbF IRGS10B60KDPbF IRGSL10B60KDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
C VCES = 600V • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. IC = 19A, TC=100°C • 10μs Short Circuit Capability. • Square RBSOA. G • Ultrasoft Diode Reverse Recovery Characteristics. tsc > 10μs, TJ=150°C • Positive VCE (on) Temperature Coefficient. • Lead-Free E n-channel VCE(on) typ. = 1.8V 7 GP] **Benefits** • Benchmark Efficiency for Motor Control. • Rugged Transient Performance. • Low EMI. A . WN • Excellent Current Sharing in Parallel Operation. TO-220AB D[2] Pak TO-262 IRGB10B60KDPbF IRGS10B60KDPbF IRGSL10B60KDPbF
## **Benefits**
- Benchmark Efficiency for Motor Control.
- Rugged Transient Performance.
- Low EMI.
- Excellent Current Sharing in Parallel Operation.
## **Absolute Maximum Ratings**
|**Parameter**<br>**Max.**<br>**Units**<br>VCES<br>Collector-to-Emitter Voltage<br>600<br>V<br>IC@ TC= 25°C<br>Continuous Collector Current<br>35<br>IC@ TC= 100°C<br>Continuous Collector Current<br>19<br>ICM<br>Pulsed Collector Current<br>44<br>ILM<br>Clamped Inductive Load Current<br>44<br>A<br>IF@ TC= 25°C<br>Diode Continuous Forward Current<br>35<br>IF@ TC= 100°C<br>Diode Continuous Forward Current<br>19<br>IFM<br>Diode Maximum Forward Current<br>44<br>a~~ee~~<br>~~a~~<br>~~a~~<br>~~a~~<br>~~a~~<br>~~a~~<br>~~==~~<br>~~ee~~||
|---|---|
|VGE<br>Gate-to-Emitter Voltage<br>± 20<br>V<br>~~oh~~||
|PD @TC= 25°C<br>Maximum Power Dissipation<br>156<br>PD@ TC =100°C<br>Maximum Power Dissipation<br>62<br>~~ee~~||
|TJ<br>Operating Junction and<br>-55 to +150||
|TSTG<br>Storage Temperature Range<br>°C<br>Soldering Temperature, for 10 sec.<br>300 (0.063 in. (1.6mm) from case)<br>~~a~~||
|**Thermal Resistance**||
|www.irf.com<br>1<br>**Parameter**<br>**Min.**<br>**Typ.**<br>**Max.**<br>**Units**<br>RθJC<br>Junction-to-Case- IGBT<br>–––<br>–––<br>0.8<br>RθJC<br>Junction-to-Case-Diode<br>–––<br>–––<br>3.4<br>RθCS<br>Case-to-Sink, flat, greased surface<br>–––<br>0.50<br>–––<br>°C/W<br>RθJA<br>Junction-to-Ambient, typicalsocketmount<br>–––<br>–––<br>62<br>RθJA<br>Junction-to-Ambient(PCB Mount,steadystate)<br>–––<br>–––<br>40<br>Wt<br>Weight<br>–––<br>1.44<br>–––<br>g<br>~~es~~<br>~~oT~~<br>~~—~~<br>~~ee ee~~<br>~~oT~~<br>~~eS~~<br>~~0~~<br>~~ee~~||
|01/07/13||
## IRG/B/S/SL10B60KDPbF
## **Electrical Characteristics @ TJ = 25°C (unless otherwise specified)**
|**Parameter**<br>~~ee~~<br>~~es~~|**Parameter**<br>~~es~~<br>|**Min.**<br>~~es~~<br>~~ee~~<br>|**Typ. **<br>~~es~~<br>~~es~~<br>|**Max.**<br>~~es~~<br>|**Units**<br>~~es~~|**Conditions**|**Ref.Fig.**|
|---|---|---|---|---|---|---|---|
|Qg<br>~~ee~~<br>~~es~~<br>~~es~~|Total Gate Charge(turn-on)<br>~~es~~<br>~~es~~<br>|–––<br>~~es~~<br>~~ee~~<br>~~es~~<br>|38<br>~~es~~<br>~~es~~<br>~~es~~<br>|–––<br>~~es~~<br>~~es~~<br>|nC<br>~~es~~|IC= 10A<br>VCC= 400V<br>VGE= 15V|CT1|
|Qge<br>~~es~~<br>~~es~~<br>~~ee~~<br>~~es~~|Gate - Emitter Charge(turn-on)<br>~~es~~<br>~~a~~<br><br>|–––<br>~~ee ~~<br>~~es~~<br>~~a~~<br><br>~~ee~~<br>|4.3<br> ~~es~~<br>~~es~~<br>~~a~~<br><br>~~ee~~<br>|–––<br>~~es~~<br>~~a~~<br><br>||||
|Qgc<br><br>~~es~~<br>~~ee~~<br>~~es~~|Gate - Collector Charge(turn-on)<br>~~es~~<br>~~a~~<br>~~ee~~<br>|–––<br>~~es~~<br>~~a~~<br>~~ee~~<br>~~ee~~<br>|16.3<br>~~es~~<br>~~a~~<br>~~ee~~<br>~~ee~~<br>|–––<br>~~es~~<br>~~a~~<br>~~ee~~<br>||||
|Eon<br><br>~~ee~~<br>~~es~~|Turn-On SwitchingLoss<br>~~a~~<br><br>~~ee~~|–––<br>~~a~~<br><br>~~ee~~<br>~~ee~~|140<br>~~a~~<br><br>~~ee~~<br>~~ee~~|247<br>~~a~~<br><br>~~ee~~|μJ|IC= 10A, VCC= 400V<br>VGE= 15V,RG= 47Ω,L = 200μH<br>Ls = 150nH<br>TJ= 25°C<br>~~C)~~|CT4|
|Eoff<br>~~es~~<br>~~a~~<br>~~ee~~|Turn-Off Switching Loss<br><br>~~ee~~|–––<br>~~ee~~<br><br>~~ee~~|250<br>~~ee~~<br><br>~~ee~~|360<br>||||
|Etot<br>~~a~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|Total SwitchingLoss<br>~~ee~~<br>~~ee~~<br>|–––<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>|390<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>|607<br>~~ee~~<br>||||
|td(on)<br>~~ee~~<br>~~ee~~<br>~~ee~~|Turn-On DelayTime<br>~~ee ~~<br>~~ee~~<br>|–––<br> ~~ee~~<br>~~ee~~<br>~~ee~~<br>|30<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>|39<br>~~ee~~<br>|ns|IC= 10A, VCC= 400V<br>VGE= 15V, RG= 47Ω,L = 200μH<br>Ls = 150nH, TJ= 25°C<br>~~C)~~|CT4|
|tr<br>~~ee~~<br>~~ee~~<br>~~es~~|Rise Time<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~<br>~~ee~~|20<br>~~ee~~<br>~~ee~~<br>~~ee~~|29<br>~~ee~~<br>~~ee~~||||
|td(off)<br>~~ee~~<br>~~es~~|Turn-Off Delay Time<br>~~ee~~|–––<br>~~ee ~~<br>~~ee~~|230<br> ~~ee~~<br>~~ee~~|262<br>~~ee~~||||
|tf<br><br>~~es~~<br>~~es~~<br>~~es~~|Fall Time<br>~~ee~~<br>~~es~~<br>~~ee~~|–––<br>~~ee~~<br>~~es~~<br>~~ee~~|23<br>~~ee~~<br>~~es~~<br>~~ee~~|32<br>~~ee~~<br>~~es~~<br>~~ee~~||||
|Eon<br>~~es~~<br>~~es~~<br>~~ee~~|Turn-On SwitchingLoss<br>~~es~~<br>~~ee~~<br>~~ee~~|–––<br>~~es~~<br>~~ee~~<br>~~ee~~|230<br>~~es~~<br>~~ee~~<br>~~ee~~|340<br>~~es~~<br>~~ee~~<br>~~ee~~|μJ|IC= 10A, VCC= 400V<br>VGE= 15V,RG= 47Ω,L = 200μH<br>Ls = 150nH<br>TJ= 150°C<br>~~®~~|CT4<br>13,15<br>WF1WF2|
|Eoff<br>~~es~~<br>~~ee~~<br>~~ee~~|Turn-Off SwitchingLoss<br>~~ee~~<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~|350<br>~~ee~~<br>~~ee~~|464<br>~~ee~~<br>~~ee~~||||
|Etot<br>~~ee~~<br>~~ee~~|Total SwitchingLoss<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~|580<br>~~ee~~|804<br>~~ee~~||||
|td(on)<br>~~ee ~~<br>~~a~~<br>~~es~~|Turn-On DelayTime<br> ~~ee~~|–––|30|39|ns|IC= 10A, VCC= 400V<br>VGE= 15V, RG= 47Ω,L = 200μH<br>Ls = 150nH, TJ= 150°C<br>~~®~~|14, 16<br>CT4<br>WF1<br>WF2|
|d(on)<br>tr<br>~~es~~<br>~~ee~~|Rise Time<br>~~ee~~|–––<br>~~ee~~|20<br>~~ee~~|28<br>~~ee~~||||
|td(off)<br>~~es~~<br>~~ee~~<br>~~a~~|Turn-Off DelayTime<br>~~ee~~<br>|–––<br>~~ee~~<br>|250<br>~~ee~~<br>|274<br>~~ee~~<br>||||
|tf<br>~~ee~~<br>~~aee~~<br>~~es~~|Fall Time<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~<br>~~ee~~|26<br>~~ee~~<br>~~ee~~<br>~~ee~~|34<br>~~ee~~<br>~~ee~~||||
|Cies<br>~~aee~~<br>~~es~~|Input Capacitance<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~|620<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~|pF|VGE= 0V<br>VCC= 30V<br>f = 1.0MHz||
|Coes<br>~~ee~~<br>~~es~~<br>~~Ln a~~|Output Capacitance<br>~~ee~~<br>~~a~~|–––<br>~~ee~~<br>~~ee~~|62<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~||||
|Cres<br>~~es~~<br>~~Ln a~~|Reverse Transfer Capacitance<br>~~a~~|–––<br>~~ee ~~|22<br> ~~ee~~|–––||||
|RBSOA<br>~~Ln a~~|Reverse Bias Safe Operting Area<br>~~a~~|FULL SQUARE||||TJ= 150°C, IC= 44A, Vp =600V<br>VCC= 500V,VGE= +15V to 0V,<br>RG= 47Ω|4<br>CT2|
|SCSOA<br>~~Ln a~~<br>~~es~~|Short Circuit Safe Operting Area<br>~~a~~<br>~~es~~|10<br>~~es~~|–––<br>~~es~~|–––<br>~~es~~|μs<br>~~es~~|TJ= 150°C, Vp =600V,RG= 47Ω<br>VCC =360V, VGE =+15V to 0V|CT3<br>WF4|
|Erec<br>~~es~~<br>~~es~~|Reverse Recoveryenergyof the diode<br>~~es~~<br>~~ee~~|–––<br>~~es~~<br>~~ee~~|245<br>~~es~~<br>~~ee~~|330<br>~~es~~<br>~~ee~~|μJ<br>~~es~~<br>~~ee~~|TJ= 150°C<br>VCC= 400V, IF= 10A, L = 200μH<br>VGE= 15V,RG= 47Ω,Ls = 150nH|17,18,19<br>20, 21<br>CT4,WF3|
|trr<br>~~es~~<br>~~es~~<br>~~ee~~|Diode Reverse Recoverytime<br>~~es~~<br>~~ee~~<br>~~es~~|–––<br>~~es~~<br>~~ee~~<br>~~es~~|90<br>~~es~~<br>~~ee~~<br>~~es~~|105<br>~~es~~<br>~~ee~~<br>~~es~~|ns<br>~~es~~<br>~~ee~~<br>~~es~~|||
|Irr<br>~~es~~<br>~~ee~~|Diode Peak Reverse Recovery Current<br>~~ee~~<br>~~es~~|–––<br>~~ee~~<br>~~es~~|19<br>~~ee~~<br>~~es~~|22<br>~~ee~~<br>~~es~~|A<br>~~ee~~<br>~~es~~|||
Note (0) to ® are on page 15 2
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## IRG/B/S/SL10B60KDPbF
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40<br>35 ptt} ty tt<br>30<br>PENSE)<br>25<br>tN<br>20<br>HN<br>15<br>ptt} i NEI<br>10 aaa<br>5 Pt tT tT TIN I<br>|<br>0 Pt [ee]<br>0 20 40 60 80 100 120 140 160<br> TC (°C)<br>IC (A)<br>**----- End of picture text -----**<br>
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180<br>160<br>Pt tt ty tt<br>140<br>120 EGEEEEE<br>100 CONE<br>80 PENCE<br>60<br>COE NCES<br>40 Na<br>20 TT<br>ee ee<br>0 PENT<br>0 20 40 60 80 100 120 140 160<br> TC (°C)<br>Ptot (W)<br>**----- End of picture text -----**<br>
**Fig. 1** - Maximum DC Collector Current vs. Case Temperature
**Fig. 2** - Power Dissipation vs. Case Temperature
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100 100<br>a Ah SE<br>10 10 μs 10<br>INS UU GD Ul<br>20 μs<br>PEC ELIE CAN SETI<br>1<br>AMICUS DC 100 μs 1<br>1ms<br>a | | |||<br>0.1<br>UIE TATE ESN TT<br>0<br>1 10 100 1000 10000<br> VCE (V)<br>IC (A) IC A)<br>**----- End of picture text -----**<br>
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10<br>**----- End of picture text -----**<br>
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1<br>pf ff tp<br>el<br>0<br>10 100 1000<br>VCE (V)<br>**----- End of picture text -----**<br>
**Fig. 3** - Forward SOA TC = 25°C; TJ ≤ 150°C
**Fig. 4** - Reverse Bias SOA TJ = 150°C; VGE =15V
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## IRG/B/S/SL10B60KDPbF
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40<br>35 V GE = 18V WA |<br>VGE = 15V<br>30 VGE = 12V<br>\/An<br>VGE = 10V<br>25 VGE = 8.0V<br>Wo<br>20<br>15<br>10<br>5 ified|<br>0 F | | |<br>0 1 2 3 4 5 6<br> VCE (V)<br>ICE (A)<br>**----- End of picture text -----**<br>
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40<br>35 V GE = 18V — AZ|<br>VGE = 15V<br>30 VGE = 12V<br>SW<br>VGE = 10V<br>25 VGE = 8.0V<br>Wa<br>20<br>15<br>10<br>5 life]|<br>0 | Fi | | |<br>0 1 2 3 4 5 6<br> VCE (V)<br>ICE (A)<br>**----- End of picture text -----**<br>
**Fig. 5** - Typ. IGBT Output Characteristics TJ = -40°C; tp = 80μs
**Fig. 6** - Typ. IGBT Output Characteristics TJ = 25°C; tp = 80μs
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40<br>35 V GE = 18V<br>VGE = 15V<br>30 VGE = 12V NWA<br>VGE = 10V<br>25 VGE = 8.0V SY LZ<br>20<br>Ne<br>15<br>10<br>5 4m<br>0<br>0 1 2 3 4 5 6<br> VCE (V)<br>ICE (A)<br>**----- End of picture text -----**<br>
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40<br>35 -40°C<br>25°C<br>30 150°C<br>fo Wo<br>25 ee)<br>20<br>15<br>10<br>5<br>0 iw!|<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0<br> VF (V)<br>IF (A)<br>**----- End of picture text -----**<br>
**Fig. 7** - Typ. IGBT Output Characteristics TJ = 150°C; tp = 80μs
**Fig. 8** - Typ. Diode Forward Characteristics tp = 80μs
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## IRG/B/S/SL10B60KDPbF
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201816 PTT}a | ee ee<br>1412 amin ee I CE = 5.0A ee<br>10 ima ICE = 10A<br>8 I CE = 15A<br>| er<br>6 |<br>4 ae Hee<br>2 | (A ht es<br>ee<br>0<br>5 10 15 20<br> VGE (V)<br>VCE (V)<br>**----- End of picture text -----**<br>
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201816 aaee<br>141210 |eeii[tt II CE CE = 5.0A= 10A ee<br>8 I CE = 15A<br>| |<br>6 [|r<br>4 | Hee<br>2 Ppee (Re<br>i ee<br>0<br>5 10 15 20<br> VGE (V)<br>VCE (V)<br>**----- End of picture text -----**<br>
**Fig. 9** - Typical VCE vs. VGE TJ = -40°C
**Fig. 10** - Typical VCE vs. VGE TJ = 25°C
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20<br>18 ee<br>16 on ee<br>ee<br>14 PT i], |<br>12 TH I CE = 5.0A<br>10 limes ICE = 10A<br>8 Pee I CE = 15A<br>6<br>Hee<br>4 rife.<br>2<br>0 OSee<br>5 10 15 20<br> VGE (V)<br>VCE (V)<br>**----- End of picture text -----**<br>
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80<br>T = 25°C<br>70 J<br>T = 150°C<br>J<br>60 ries)<br>7 do<br>50 e/a<br>40 e/a<br>3020 e/afo<br>TJ = 150°C /<br>100 |AA) T J = 25°C —<br>0 5 10 15 20<br> VGE (V)<br>**----- End of picture text -----**<br>
**Fig. 11** - Typical VCE vs. VGE TJ = 150°C
**Fig. 12** - Typ. Transfer Characteristics VCE = 50V; tp = 10μs
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## IRG/B/S/SL10B60KDPbF
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800<br>700<br>600 pi]<br>500 E OFF<br>400 Pp oyye<br>300 Pi As | y y<br>200 E ON<br>100 pO<br>0 Ff | |<br>0 5 10 15 20 25<br> IC (A)<br>Swiching Time (ns)<br>Energy (μJ)<br>**----- End of picture text -----**<br>
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1000<br>fy td OFF es ee Ge<br>100 ——————<br>td ON<br>——— tF<br>tR Ia<br>10<br>0 5 10 15 20 25<br>IC (A)<br>**----- End of picture text -----**<br>
**Fig. 13** - Typ. Energy Loss vs. IC TJ = 150°C; L=200μH; VCE= 400V RG= 47 Ω ; VGE= 15V
**Fig. 14** - Typ. Switching Time vs. IC TJ = 150°C; L=200μH; VCE= 400V RG= 47 Ω ; VGE= 15V
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500 1000<br>450 EOFF<br>tdOFF<br>400 pf tt fy}<br>esa ——fF<br>350<br>an a aa eee<br>300<br>Ee EON<br>250 100<br>4 ]: —C—id L<br>200<br>tdON<br>150 ae ee ———<br>ee —— ae tR<br>100<br>tF<br>50<br>——-— +s<br>eee<br>0 10<br>0 50 100 150 0 50 100 150<br>RG ( Ω ) RG ( Ω )<br>Swiching Time (ns)<br>Energy (μJ)<br>**----- End of picture text -----**<br>
**Fig. 15** - Typ. Energy Loss vs. RG TJ = 150°C; L=200μH; VCE= 400V ICE= 10A; VGE= 15V
**Fig. 16** - Typ. Switching Time vs. RG TJ = 150°C; L=200μH; VCE= 400V ICE= 10A; VGE= 15V
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## IRG/B/S/SL10B60KDPbF
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25 25<br>RG = 10 Ω<br>20 nr RG =22 Ω 20<br>15 R G = 47 Ω 15<br>aan=n<br>10 nem RG =100 Ω 10<br>PT<br>5 ft it 5<br>TT<br>0 0<br>0 5 10 15 20 25 0 50 100 150<br>IF (A) RG ( Ω)<br>IRR (A) IRR (A)<br>**----- End of picture text -----**<br>
**Fig. 17** - Typical Diode IRR vs. IF TJ = 150°C
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Fig. 18 - Typical Diode IRR vs. RG<br>TJ = 150°C; IF = 10A<br>**----- End of picture text -----**<br>
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25<br>20<br>15<br>10<br>5<br>0<br>0 500 1000 1500<br>diF /dt (A/μs)<br>IRR (A)<br>**----- End of picture text -----**<br>
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1200<br> 10 Ω<br>1100 22 Ω<br>1000<br>47 Ω<br>900 4) ae<br>100 Ω<br>800 PDA I<br>20A<br>700 Ew 45/ieee<br>10A<br>ia<br>600<br>5.0A<br>500400 |aeLr ee<br>0 500 1000 1500<br>diF /dt (A/μs)<br>QRR (nC)<br>**----- End of picture text -----**<br>
**Fig. 19** - Typical Diode IRR vs. diF/dt VCC= 400V; VGE= 15V; ICE= 10A; TJ = 150°C
**Fig. 20** - Typical Diode QRR VCC= 400V; VGE= 15V;TJ = 150°C
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## IRG/B/S/SL10B60KDPbF
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450<br>400<br>| |fT 10 Ω<br>350 ArTs 22 Ω<br>Ao<br>300<br>250<br>47 Ω<br>200 tat 100 Ω<br>150<br>Pf ft<br>100<br>| [tT]<br>| |<br>50<br>| |<br>eee<br>0<br>0 5 10 15 20 25<br>IF (A)<br>Energy (μJ)<br>**----- End of picture text -----**<br>
**Fig. 21** - Typical Diode ERR vs. IF TJ = 150°C
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1000 16<br>Cies<br>14<br>300V<br>EE 12 rot lOUOW<br>ee eee A 400V<br>10<br>eel eemmE | Pp |Lf<br>8<br>100 Coes<br>rR<br>IM) = Fr=<br>6<br>Cres 4<br>HHP SNH 2 ToT<br>PAI NAT<br>0<br>a<br>10<br>0 10 20 30 40<br>1 10 100<br>Q G, Total Gate Charge (nC)<br>VCE (V)<br>Capacitance (pF)<br>VGE (V)<br>**----- End of picture text -----**<br>
**Fig. 22** - Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz
**Fig. 23** - Typical Gate Charge vs. VGE ICE = 10A; L = 600μH
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## IRG/B/S/SL10B60KDPbF
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1<br>D = 0.50<br>ee | ea | ||<br>0.20<br>= ST a a<br>0.1 Pieter ig<br>0.10 R1R1 R2R2 R3R3 Ri (°C/W) τ i (sec)<br>|—| 0.010.020.05 COPeas fa eee τ J τ J τ 1 τ book 1 τ 2 τ 2 ty τ 3 τ 3 τ C τ 0.285 0.000134 0.241 0.000565 1]I<br>0.01 Sera al Anil|reea Ci= { Ci τ i / Ri i / Ri T T -— 0.288 0.0083 Hl<br>||<br>ee<br>SINGLE PULSE Notes:<br>ESSE FHEE<br>( THERMAL RESPONSE ) 1. Duty Factor D = t1/t2<br>Cl eal<br>2. Peak Tj = P dm x Zthjc + Tc<br>EEE ei Tn i<br>0.001<br>1E-6 1E-5 1E-4 1E-3 1E-2 1E-1 1E+0<br>t1 , Rectangular Pulse Duration (sec)<br>Fig 24. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)<br>10<br>D = 0.50 SRen<br>1<br>en 0.20 | | |<br>0.10<br>0.05 eA HT R1 R1 R2 R2 R3 R 3 [| Ri (°C/W) τ i (sec) i<br>0.1 0.01 τ J τ J τ C τ 0.846 0.000149<br>Le 0.02 τ 1 τ 1 τ 2 τ 2 τ 3 τ 3 — 1.830 0.001575 |<br>Sete] i<br>Ci= τ i / Ri 1.143 0.027005<br>PCA Ci i / Ri || il<br>0.01 Rae SINGLE PULSE ea aee Notes:<br>( THERMAL RESPONSE )<br>a ee ee ee ee ee ee 1. Duty Factor D = t1/t2 Ty<br>a ee ee ee eel 2. Peak Tj = P dm x Zthjc + Tc Hl<br>err eet sedi tt<br>0.001<br>1E-6 1E-5 1E-4 1E-3 1E-2 1E-1 1E+0<br>t1 , Rectangular Pulse Duration (sec)<br> thJC )<br>Thermal Response ( Z<br>Thermal Response ( Z thJC )<br>**----- End of picture text -----**<br>
**Fig 25.** Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
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## IRG/B/S/SL10B60KDPbF
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L<br>L<br>DUT VCC 80 V + DUT<br>0 - 480V<br>1K Rg<br>**----- End of picture text -----**<br>
**Fig.C.T.1** - Gate Charge Circuit (turn-off)
**Fig.C.T.2** - RBSOA Circuit
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diode clamp /<br>DUT<br>Driver L<br>r<br>- 5V<br>DC 360V<br>DRIVERDUT / | VCC<br>a DUT Rg<br> - S.C.SOA Circuit Fig.C.T.4 - Switching Loss Circuit<br>VCC<br>R =<br>ICM<br>DUT VCC<br>Rg<br>**----- End of picture text -----**<br>
**Fig.C.T.3** - S.C.SOA Circuit
**Fig.C.T.5** - Resistive Load Circuit
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## IRG/B/S/SL10B60KDPbF
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TER Rectifier<br>600 12<br>500 | 10<br>400 8<br>90% ICE<br>300 bE 6<br>tf<br>200 4<br>in|<br>5% V CE<br>100 yy 2<br>5% ICE<br>0 0<br>Eoff Loss<br>-100 -2<br>-0.20 0.00 0.20 0.40 0.60 0.80<br>time(μs)<br> (V) (A)<br>VCE ICE<br>**----- End of picture text -----**<br>
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600 30<br>500 ee 25<br>40 0 20<br>TEST CURRENT<br>300 A. 15<br>90% test current<br>200 10<br>MW<br>10% test current<br>100 i, tr BS 5% V CE 5<br>0 0<br>Eon Loss<br>-100 -5<br>15.90 16.00 16.10 16.20<br>time (μs)<br> (V) (A)<br>VCE ICE<br>**----- End of picture text -----**<br>
Fig. WF1- Typ. Turn-off Loss Waveform @ TJ = 150°C using Fig. CT.4
Fig. WF2- Typ. Turn-on Loss Waveform @ TJ = 150°C using Fig. CT.4
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100 15<br>QRR<br>0 10<br>tRR<br>-100 ee 5<br>-200 0<br>A<br>-300 10% -5<br>Tt Peak o4\y Peak<br>IRR<br>-400 I RR -10<br>-500 , -15<br>1<br>-600 na -20<br>-0.15 -0.05 0.05 0.15 0.25<br>time (μS)<br> (V)VF (A)IF<br>**----- End of picture text -----**<br>
Fig. WF3- Typ. Diode Recovery Waveform @ TJ = 150°C using Fig. CT.4
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400 100<br>VCE<br>350<br>300 ae<br>—<br>ICE<br>250<br>200 fo 50<br>150 fo]<br>100<br>TI<br>50<br>po<br>0 ee 0<br>-5.00 0.00 5.00 10.00 15.00<br>time (μS)<br> (V) (A)<br>VCE ICE<br>**----- End of picture text -----**<br>
Fig. WF4- Typ. S.C Waveform @ TJ = 150°C using Fig. CT.3
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## IRG/B/S/SL10B60KDPbF
E XAMPLE : T HIS IS AN IRF1010 LOT CODE 1789 AS S EMB LE D ON WW 19, 1997 IN T HE AS S EMBLY LINE "C"
**Note:** "P" in assembly line position indicates "Lead-Free"
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PART NUMBER<br>INTE RNAT IONAL<br>RE CT IFIER<br>I RF 1010<br>LOGO<br>IeaR 719C<br>17 89 DAT E CODE<br>YEAR 7 = 1997<br>AS S E MBLY<br>LOT CODE WE EK 19<br>LINE C<br>**----- End of picture text -----**<br>
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## IRG/B/S/SL10B60KDPbF
## Dimensions are shown in millimeters (inches)
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THIS IS AN IRF530S WITH PART NUMBER<br>LOT CODE 8024 INTERNATIONAL cS<br>ASSEMBLED ON WW 02, 2000 RECTIFIER F530S<br>IN THE ASSEMBLY LINE "L" LOGO IOR 0021<br>8024 DATE CODE<br>Note: "P" in assembly line YEAR 0 = 2000<br>position indicates "Lead-Free" ASSEMBLY U y ]<br>LOT CODE TGo V67 WEEK 02<br>LINE L<br>PART NUMBER<br>INTERNATIONAL |<br>RECTIFIER F530S<br>LOGO TORP OO2 A<br>8024 DATE CODE<br>ASSEMBLYLOT CODE HnyUJ uy U YEAR 0 = 2000P = DESIGNATES LEAD-FREEPRODUCT (OPTIONAL)<br>WEEK 02<br>A = ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>
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www.irf.com<br>**----- End of picture text -----**<br>
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## IRG/B/S/SL10B60KDPbF
## TO-262 Package Outline
Dimensions are shown in millimeters (inches)
## TO-262 Part Marking Information
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EXAMPLE: THIS IS AN IRL3103L<br>LOT CODE 1789 PART NUMBER<br>Note: "P" in assembly lineASSEMBLED ON WW 19, 1997IN THE ASSEMBLY LINE "C" INTERNATIONALRECTIFIERLOGO TOR c17IRL3103L S 719¢89 DATE CODE<br>position indicates "Lead-Free" ASSEMBLY YEAR 7 = 1997<br>LOT CODE WEEK 19<br>LINE C<br>OR<br>PART NUMBER<br>INTERNATIONAL |<br>RECTIFIER IRL3103L<br>LOGO TE 17 AR? 71989 A DATE CODE<br>P = DESIGNATES LEAD-FREE<br>ASSEMBLY PRODUCT (OPTIONAL)<br>LOT CODE YEAR 7 = 1997<br>WEEK 19<br>A = ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>
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## IRG/B/S/SL10B60KDPbF
Dimensions are shown in millimeters (inches)
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TRR<br>1.60 (.063)<br>1.50 (.059)<br>1.60 (.063)<br>4.10 (.161)3.90 (.153) 1.50 (.059) 0.368 (.0145)<br>0.342 (.0135)<br>FEED DIRECTION 1.85 (.073) 11.60 (.457)<br>1.65 (.065) TS 11.40 (.449) 15.42 (.609)15.22 (.601) £4 24.30 (.957)23.90 (.941)<br>TRL<br>— VNR 1.75 (.069)<br>10.90 (.429) 1.25 (.049)<br>10.70 (.421) 4.72 (.136)<br>16.10 (.634) 4.52 (.178)<br>15.90 (.626)<br>FEED DIRECTION<br>13.50 (.532) 27.40 (1.079)<br>4 12.80 (.504) 23.90 (.941) _ 4 OP<br>| 330.00 60.00 (2.362)<br>(14.173) MIN.<br> MAX.<br>F<br>NOTES : >J it 30.40 (1.197) MAX.<br>1. COMFORMS TO EIA-418.2. CONTROLLING DIMENSION: MILLIMETER. 26.40 (1.03924.40 (.961) ) t 4<br>.fs} 3. DIMENSION MEASURED @ HUB.4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 3<br>**----- End of picture text -----**<br>
Notes:
® This is only applied to TO-220AB package 0) This is applied to D[2] Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. 6) Energy losses include "tail" and diode reverse recovery. Q) VCC = 80% (VCES), VGE = 20V, L = 100μH, RG = 47 Ω.
TO-220 package is not recommended for Surface Mount Application
Data and specifications subject to change without notice. This product has been designed and qualified for Industrial market. Qualification Standards can be found on IR’s Web site.
**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 01/2013
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15
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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