IRG8P60N120KDPBF
IGBT, N-CH, 100 A, 1.7 V, 420 W, 1.2 kV, TO-247AC, 3 Pins
- Manufacturer: INFINEON
- Product type: Single IGBTs
- No. of Pins: 3Pins
- Power Dissipation: 420W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-247AC
- Operating Temperature Max: 150°C
- Continuous Collector Current: 100A
- Collector Emitter Voltage Max: 1.2kV
- Collector Emitter Saturation Voltage: 1.7V
| Delivery and price | |
|---|---|
| Units per pack | 1 |
| Price | 3.57 € |
| Current stock | 10+ |
| Lead time | 30 days |
IRG8P60N120KDPbF IRG8P60N120KD-EPbF ## International **==> picture [542 x 156] intentionally omitted <==** **----- Start of picture text -----**<br> Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode<br>VCES = 1200V<br>C<br>IC = 60A, TC =100°C<br>tSC 10µs, TJ(max) = 150°C G C [E ] E<br>G G [C ]<br>VCE(ON) typ. = 1.7V @ IC = 40A E IRG8P60N120KDPbF<br>_ n-channel | so IRG8P60N120KD‐EPbF CR<br>TO‐247AC<br>Applications TO‐247AD<br>• Industrial Motor Drive G C E<br>• UPS Gate Collector Emitter<br>**----- End of picture text -----**<br> - Solar Inverters - Welding ## **Features** ## **Benefits** Benchmark Low VCE(ON) High Efficiency in a Motor Drive Applications ~~a~~ 10μs Short Circuit SOA Increases margin for short circuit protection scheme ~~a~~ Positive VCE(ON) Temperature Coefficient Excellent Current Sharing in Parallel Operation ~~a~~ Square RBSOA and high ILM- rating Rugged Transient Performance ~~a~~ Lead-Free, RoHS compliant ~~(I~~ Environmentally friendly |**Base part number**|**Package Type**|**Standard Pack**|**Standard Pack**|**Orderable Part Number**| |---|---|---|---|---| |||**Form**|**Quantity**|| |IRG8P60N120KDPbF|TO-247AC|Tube|25|IRG8P60N120KDPbF| |IRG8P60N120KD-EPbF|TO-247AD|Tube|25|IRG8P60N120KD-EPbF| ## **Absolute Maximum Ratings** |**Absolute Maximum Ratings**<br>~~es~~|**Absolute Maximum Ratings**<br>~~rs I~~|~~I~~|| |---|---|---|---| |~~es~~|**Parameter**<br>~~rs I~~|**Max.**<br>~~I~~|**Units**| |VCES<br>~~es~~<br>~~I~~|Collector-to-Emitter Voltage<br>~~rs I~~<br>~~I~~|1200<br>~~I~~<br>~~I~~|V<br>~~I~~| |IC@ TC =25°C<br>~~a~~|Continuous Collector Current (Silicon Limited)<br>~~a~~|100<br>~~a~~|A<br>~~a~~<br>~~a~~| |IC @TC= 100°C<br>~~a~~<br>~~ee~~|Continuous Collector Current<br>~~a~~|60<br>~~a~~|| |ICM<br>~~a~~<br>~~ee~~<br>~~ee~~|Pulse Collector Current (see fig. 2)<br>~~a~~|120<br>~~a~~|| |ILM<br>~~ee~~<br>~~ee~~<br>~~a~~|Clamped Inductive Load Current(see fig. 3)<br>~~Re~~|160|| |IF@ TC =25°C<br>~~ee~~<br>~~a~~<br>~~es~~|Diode Continuous Forward Current<br>~~Re~~<br>~~es~~|50<br>~~es~~|| |IF @TC= 100°C<br>~~a~~<br>~~es~~|Diode Continuous Forward Current<br>~~Re~~<br>~~es~~|30<br>~~es~~|| |IFM<br>~~es~~<br>~~a~~|Diode Maximum Forward Current<br>~~es~~|160<br>~~es~~|| |VGE<br>~~a ~~<br>~~ee~~|Continuous Gate-to-Emitter Voltage<br> ~~Rf~~|±30<br>~~Rf~~|V<br>~~Rf~~| |PD @TC= 25°C<br> <br>~~ee~~|Maximum Power Dissipation<br> ~~Rf~~|420<br>~~Rf~~|W<br>~~Rf~~| |PD@ TC =100°C<br> <br>~~ee~~<br>~~NN~~|Maximum Power Dissipation<br> ~~Rf~~<br>~~NN~~|170<br>~~Rf~~|| |TJ<br>TSTG<br>~~NN~~<br>~~pp~~|Operating Junction and<br>Storage Temperature Range<br>~~NN~~<br>~~pp~~|-40 to +150<br>~~pp~~|C<br>~~pp~~| |~~pp~~<br>~~es~~|Soldering Temperature, for 10 sec.<br>~~pp~~<br>~~nn~~|300 (0.063 in. (1.6mm) from case)<br>~~pp~~<br>~~nn~~|| |~~pp~~<br>~~es~~|Mounting Torque, 6-32 or M3 Screw<br>~~pp~~<br>~~nn~~|10 lbf·in (1.1 N·m)<br>~~pp~~<br>~~nn~~|| 1 www.irf.com ~~=~~ ~~_~~ Submit Datasheet Feedback October 30, 2014 1 www.irf.com © 2014 International Rectifier IRG8P60N120KDPbF/IRG8P60N120KD-EPbF ## ~~TOR~~ ## **Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** ||**Parameter**|**Min.**|**Typ. **|**Max****Units**|**Units**|**Conditions**| |---|---|---|---|---|---|---| |Qg|Total Gate Charge (turn-on)|—|230|345|nC<br>|IC= 40A<br>VGE= 15V<br>VCC= 600V<br>~~oe~~| |g<br>Qge<br>~~———~~|Gate-to-Emitter Charge (turn-on)<br>~~———~~|—|15|25||| |ge<br>Qgc<br>~~———~~<br>~~re~~|Gate-to-Collector Charge (turn-on)<br>~~———~~<br>~~re~~|—<br>~~re~~|140<br>~~re~~|210<br>~~re~~||| |gc<br>Eon<br>~~———~~<br>~~ee~~<br>~~re~~|Turn-OnSwitchingLoss<br>~~———~~<br>~~nn~~<br>~~re~~|—<br>~~nn~~<br>~~I~~<br>~~re~~|2.8<br>~~nn~~<br>~~I~~<br>~~re~~|—<br>~~nn~~<br>~~re~~|mJ <br>|IC= 40A, VCC= 600V, VGE=15V<br>RG= 5.0, TJ= 25°C<br>Energy losses include tail & diode<br>reverse recovery<br>~~oe~~| |Eoff<br>~~———~~<br>~~ee~~<br>~~re~~|Turn-OffSwitchingLoss<br>~~———~~<br>~~nn~~<br>~~re~~|—<br>~~nn~~<br>~~I~~<br>~~re~~|2.3<br>~~nn~~<br>~~I~~<br>~~re~~|—<br>~~nn~~<br>~~re~~||| |Etotal<br>~~———~~<br>~~ee~~<br>~~re~~|Total SwitchingLoss<br>~~———~~<br>~~nn~~<br>~~re~~|—<br>~~nn~~<br>~~I ~~<br>~~re~~|5.1<br>~~nn~~<br> ~~I~~<br>~~re~~|—<br>~~nn~~<br>~~re~~||| |td(on)<br>~~———~~<br>~~re~~|Turn-On delay time<br>~~———~~<br>~~re~~|—<br>~~re~~|40<br>~~re~~|—<br>~~re~~|ns<br>|| |d(on)<br>tr<br>~~re~~|Rise time<br>~~re~~|—<br>~~re~~|30<br>~~re~~|—<br>~~re~~||| |td(off)<br>~~re~~|Turn-Off delay time<br>~~re~~|—<br>~~re~~|240<br>~~re~~|—<br>~~re~~||| |d(off)<br>tf<br>~~re~~|Fall time<br>~~re~~|—<br>~~re~~|110<br>~~re~~|—<br>~~re~~||| |Eon<br>~~re~~|Turn-On Switching Loss<br>~~re~~|—<br>~~re~~|4.4<br>~~re~~|—<br>~~re ~~|mJ<br>|IC= 40A, VCC= 600V, VGE=15V<br>RG= 5.0, TJ= 150°C<br>Energy losses include tail & diode<br>reverse recovery<br> ~~oe~~| |Eoff<br>~~rs~~|Turn-Off SwitchingLoss|—|4.2|—||| |Etotal<br>~~rs~~<br>~~rs~~<br>~~——_——~~|Total SwitchingLoss<br>~~——_——~~|—<br>~~——_——~~|8.6|—||| |td(on)<br>~~rs~~<br>~~rs~~<br>~~ee——_——~~|Turn-On delaytime<br>~~——_——~~|—<br>~~——_——~~|40|—|ns|| |tr<br>~~rs~~<br>~~ee——_——~~|Rise time<br>~~——_——~~|—<br>~~——_——~~|30|—||| |td(off)<br>~~ee——_——~~|Turn-Off delaytime<br>~~——_——~~|—<br>~~——_——~~|310|—||| |tf<br>~~——_——~~|Fall time<br>~~——_——~~|—<br>~~——_——~~|110|—||| |Cies<br>~~——_——~~<br>~~SSS~~|Input Capacitance<br>~~——_——~~<br>~~SSS~~|—<br>~~——_——~~<br>~~SSS~~|3700<br>~~SSS~~|—<br>~~SSS~~|pF<br>~~SSS~~|VGE= 0V<br>VCC= 30V<br>f = 1.0Mhz<br>~~SSS~~| |Coes<br>~~——_——~~<br>~~SSS~~|Output Capacitance<br>~~——_——~~<br>~~SSS~~|—<br>~~——_——~~<br>~~SSS~~|215<br>~~SSS~~|—<br>~~SSS~~||| |Cres<br>~~SSS~~|Reverse Transfer Capacitance<br>~~SSS~~|—<br>~~SSS~~|120<br>~~SSS~~|—<br>~~SSS~~||| |RBSOA<br>~~SSS~~<br>~~$$~~|Reverse Bias Safe Operating Area<br>~~SSS~~<br>~~$$~~|FULL SQUARE<br>~~SSS~~<br>~~$$~~|||~~SSS~~|TJ= 150°C, IC= 160A<br>VCC= 960V, Vp ≤ 1200V<br>VGE= +20V to 0V<br>~~SSS~~| |SCSOA<br>~~$$~~|Short Circuit Safe Operating Area<br>~~$$~~|10<br>~~$$~~<br>~~ee~~|—<br>~~$$~~<br>~~ee~~|—<br>~~$$~~<br>~~ee~~|µs <br>~~ee~~|TJ= 150°C,VCC= 600V, Vp ≤ 1200V<br>VGE= +15V to 0V| |Erec<br>~~$$~~<br>~~ee~~|Reverse RecoveryEnergyof the Diode<br>~~$$~~<br>~~ee~~|—<br>~~$$~~<br>~~ee~~<br>~~ee~~|1.8<br>~~$$~~<br>~~ee~~<br>~~ee~~|—<br>~~$$~~<br>~~ee~~<br>~~ee~~|mJ<br>~~ee~~<br>~~ee~~|TJ= 150°C<br>VCC= 600V, IF= 40A<br>VGE= 15V,Rg= 5.0<br>~~ee~~| |trr<br>~~ee~~|Diode Reverse RecoveryTime<br>~~ee~~|—<br>~~ee~~<br>~~ee~~|210<br>~~ee~~<br>~~ee~~|—<br>~~ee~~<br>~~ee~~|ns<br>~~ee~~<br>~~ee~~|| |Irr<br>~~ee~~|Peak Reverse RecoveryCurrent<br>~~ee~~|—<br>~~ee~~<br>~~ee~~|21<br>~~ee~~<br>~~ee~~|—<br>~~ee~~<br>~~ee~~|A<br>~~ee~~<br>~~ee~~|| - R is measured at TJ of approximately 90°C. - Refer to AN-1086 for guidelines for measuring V(BR)CES safely. - Maximum limits are based on statistical sample size characterization. - Pulse width limited by max. junction temperature. - Values influenced by parasitic L and C in measurement. Submit Datasheet Feedback October 30, 2014 www.irf.com © 2014 International Rectifier 2 **==> picture [574 x 226] intentionally omitted <==** **----- Start of picture text -----**<br> IRG8P60N120KDPbF/IRG8P60N120KD-EPbF<br>‘_i5P,<br>100<br>For both:<br>Duty cycle : 50%<br>80 a Tj = 150°C ll<br>Tcase = 100°C<br>Gate drive as specified<br>Power Dissipation = 167W<br>60<br>TIPS<br>a Square Wave: aalll<br>40 VCC<br>I<br>20<br>Diode as specified<br>I A<br>STE EET Pt<br>0<br>0.1 1 10 100<br>Load Current ( A )<br>**----- End of picture text -----**<br> f , Frequency ( kHz ) **Fig. 1** - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) **==> picture [485 x 457] intentionally omitted <==** **----- Start of picture text -----**<br> 1000 1000<br>100<br>qa 10µsec 100<br>10<br>aa 100µsec<br>10<br>1msec<br>1<br>bine Tc = 25°C ©<br>Tj = 150°C DC<br>Single Pulse<br>EE<br>0.1 1<br>1 10 100 1000 10000 10 100 1000 10000<br>VCE (V) VCE (V)<br>Fig. 2 - Forward SOA Fig. 3 - Reverse Bias SOA<br>TC = 25°C; TJ ≤ 150°C; VGE = 15V TJ = 150°C; VGE = 20V<br>1000<br>1000<br>100<br>100 Tee ee Tc = -40°C<br>Tc = 25°C<br>Tc = 150°C<br>10<br>10 ofA<br>VGE = 18V<br>1<br>1.0 AS VGE = 15V Of<br>VGE = 12V<br>VGE = 10V<br>VGE = 8.0V<br>0.1<br>0.1 ttt} 0 EEE 2 4 6 8 10<br>0 2 4 6 8 10<br> VCE (V)<br> VCE (V)<br>Fig. 5 - Typ. IGBT Saturation Voltage<br>Fig. 4 - Typ. IGBT Output Characteristics<br>VGE = 15V; tp = 20µs<br>TJ = 25°C; tp = 20µs<br>ICE (A)<br>ICE (A)<br>IC (A) IC (A)<br>**----- End of picture text -----**<br> **Fig. 5** - Typ. IGBT Saturation Voltage 3 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback October 30, 2014 ~~ee~~ **==> picture [574 x 708] intentionally omitted <==** **----- Start of picture text -----**<br> IRG8P60N120KDPbF/IRG8P60N120KD-EPbF<br>iV#£4[DDi___R<br>1000 16<br>14 VCES = 600V<br>VCES = 400V<br>100 12<br>TA 10 |OUFE<br>10 8<br>Of<br>| 6 ee<br>1 TJ = -40 ° C 4<br>TJ = 25°C<br>TJ = 150°C 2<br>0.1 HeoWey) 0 PeEee<br>4 6 8 10 12 14 16 18 20 0 50 100 150 200 250<br> VGE (V) Q G, Total Gate Charge (nC)<br>Fig. 6 - Typ. Transfer Characteristics Fig. 7 - Typical Gate Charge vs. VGE<br>VCE = 50V; tp = 20µs ICE = 40A<br>16 1000<br>E OFF @ Tj = 150°C tdOFF<br>EON @ Tj = 150°C<br>12 E RR @ Tj = 150°C tF<br>100<br>E OFF @ Tj = 25°C tdON<br>8 E ON @ Tj = 25°C<br>ERR @ Tj = 25°C<br>10<br>tR<br>4<br>1<br>Pes =<br>0 0 20 40 60 80<br>0 10 20 30 40 50 60 70 80<br>IC (A)<br>IC (A)<br>Fig. 9 - Typ. Switching Time vs. IC<br>Fig. 8 - Typ. Energy Loss vs. IC<br>VCE = 600V, RG = 5.0; VGE = 15V TJ = 150°C; VCE = 600V, RG = 5.0; VGE = 15V<br>8 E ON @ Tj = 150°C= 150°C 150°C°CC 1000<br>E OFF @ Tj = 150°C tdOFF<br>E RR @ Tj = 150°C Tj = 150°Cj = 150°C = 150°C<br>6 EON @ Tj = 25°C<br>EOFF @ Tj = 25°C<br>ERR @ Tj = 25°C tF<br>100<br>4<br>2 =ATAT td tR ON s<br>10<br>0 = 3 6 9 12 15 18 21 24 27<br>5 7 9 11 13 15 17 19 21 23 25 27<br>RG ()<br>VGE, Gate-to-Emitter Voltage (V)<br>Energy (mJ)<br>ICE (A)<br>Energy (mJ)<br>Swiching Time (ns)<br>Swiching Time (ns)<br>**----- End of picture text -----**<br> **==> picture [257 x 203] intentionally omitted <==** **----- Start of picture text -----**<br> 8<br>E ON @ Tj = 150°C= 150°C 150°C°CC<br>E OFF @ Tj = 150°C<br>E RR @ Tj = 150°C Tj = 150°Cj = 150°C = 150°C<br>6 EON @ Tj = 25°C<br>EOFF @ Tj = 25°C<br>ERR @ Tj = 25°C<br>4<br>2 =ATAT<br>0 =<br>5 7 9 11 13 15 17 19 21 23 25 27<br>Rg ()<br>Energy (mJ)<br>**----- End of picture text -----**<br> **Fig. 10** - Typ. Energy Loss vs. RG **Fig. 11** - Typ. Switching Time vs. RG VCE = 600V, ICE = 40A; VGE = 15V TJ = 150°C; VCE = 600V, ICE = 40A; VGE = 15V 4 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback October 30, 2014 ~~=——°°”~~ ~~iVR~~ ~~[I~~ IRG8P60N120KDPbF/IRG8P60N120KD-EPbF ~~___~~ **==> picture [474 x 195] intentionally omitted <==** **----- Start of picture text -----**<br> 25 4000<br>VCC = 600V RG = 5.0<br>3500<br>Tj = 150°C RG = 10<br>24 V GE = 15V 3000 R G = 22 AN<br>IF = 40A RG = 5 RG = 27<br>2500<br>RG = 10<br>23 RG = 2000 | |Px<br>Azz<br>RG = 27 1500 | | | |<br>22 1000 Ar [|] | TS<br>enn<br>500<br>21 ttt 0 =Pt | | |<br>200 400 600 800 1000 1200 1400 20 30 40 50 60 70 80<br>diF /dt (A/µs) IF (A)<br>IRR (A)<br>Energy (µJ)<br>**----- End of picture text -----**<br> **Fig. 12** - Typ. IRR vs. di/dt **Fig. 13** - Typ. Diode ERR vs. IF TJ = 150°C **==> picture [197 x 193] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>-40°C<br>25°C<br>150°C<br>100<br>BES==3<br>10<br>ian<br>1 fe<br>(oe<br>0.1<br>0.0 1.0 2.0 3.0 4.0 5.0 6.0<br> VF (V)<br>IF (A)<br>**----- End of picture text -----**<br> **Fig. 14** - Typ. Diode Forward Voltage Drop Characteristics Submit Datasheet Feedback October 30, 2014 www.irf.com © 2014 International Rectifier 5 TOR IRG8P60N120KDPbF/IRG8P60N120KD-EPbF **==> picture [440 x 519] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>D = 0.50<br>0.1 eT<br>eR mall<br>0.20 eeroee BEE ° Sell<br>0.10 Ri ( C/W) i (sec)<br>0.05 R 1 R1 R 2 R2 R 3 R3 R 4R4 0.004527 0.000014<br>0.01 0.010.02 J J1 1 2 2 3 3 4 4 CC 0.079980 0.134306 0.000178 0.004032<br>Ci= iRi<br>Ci= iRi<br>= jaa ee 0.079980 0.019255<br>0.001<br>SINGLE PULSE<br>( THERMAL RESPONSE ) Notes:<br>1. Duty Factor D = t1/t2<br>2. Peak Tj = P dm x Zthjc + Tc<br>Aun<br>0.0001<br>1E-006 1E-005 0.0001 0.001 0.01 0.1 1<br>t1 , Rectangular Pulse Duration (sec)<br>Fig. 15- Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)<br>10<br>1<br>D = 0.50 HE EETT<br>0.20 Soe ery Le Ri (°C/W) a i (sec)<br>0.010.1 0.050.100.020.01 J J1 1 R1R1 2 R22R2 R 3 3R33 R 4 4R4 4 C C 00.245235 0.294572 .036277 00.000597 0.012360 .000132<br>Ci= iRi<br>Ci= iRi<br>0.233626 0.098387<br>Notes:<br>0.001<br>SINGLE PULSE 1. Duty Factor D = t1/t2<br>ail ( THERMAL RESPONSE ) al 2. Peak Tj a = P dm x Zthjc + Tc<br>0.0001 ACE i coal EE |<br>1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10<br>t1 , Rectangular Pulse Duration (sec)<br>Thermal Response ( Z thJC )<br>Thermal Response ( Z thJC )<br>**----- End of picture text -----**<br> **Fig. 16 -** Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) Submit Datasheet Feedback October 30, 2014 www.irf.com © 2014 International Rectifier 6 IRG8P60N120KDPbF/IRG8P60N120KD-EPbF **==> picture [264 x 58] intentionally omitted <==** **----- Start of picture text -----**<br> L<br>DUT VCC<br>0<br>1K<br>**----- End of picture text -----**<br> **==> picture [202 x 106] intentionally omitted <==** **----- Start of picture text -----**<br> L<br>80 V +<br>- DUT VCC<br>Rg<br>**----- End of picture text -----**<br> **Fig.C.T.1** - Gate Charge Circuit (turn-off) **Fig.C.T.2** - RBSOA Circuit **==> picture [95 x 127] intentionally omitted <==** **----- Start of picture text -----**<br> 4X<br>DC VCC<br>DUT<br>RSH<br>**----- End of picture text -----**<br> **==> picture [223 x 135] intentionally omitted <==** **----- Start of picture text -----**<br> diode clamp /<br>DUT<br>L<br>-5V<br>DUT /<br>VCC<br>DRIVER<br>Rg<br>**----- End of picture text -----**<br> **Fig.C.T.3** - S.C. SOA Circuit **Fig.C.T.4** - Switching Loss Circuit (Board Stray Inductance 180nH) **==> picture [190 x 166] intentionally omitted <==** **----- Start of picture text -----**<br> C force<br>100K<br>D1 22K<br>C sense<br>DUT<br>G force 0.0075µF<br>E sense<br>#7<br>E force<br>**----- End of picture text -----**<br> **Fig.C.T.5** - BVCES Filter Circuit Submit Datasheet Feedback October 30, 2014 www.irf.com © 2014 International Rectifier 7 IRG8P60N120KDPbF/IRG8P60N120KD-EPbF ~~iV #45»»_____~~ **==> picture [235 x 244] intentionally omitted <==** **----- Start of picture text -----**<br> 800 240<br>eo<br>700 210<br>VCE<br>600 180<br>fF<br>500 150<br>ICE<br>ff<br>400 120<br>ff<br>300 90<br>ff<br>200 60<br>ff<br>100 30<br>| Le<br>0 0<br>oo<br>-100 -30<br>-20.00 -10.00 0.00 10.00<br>time (µs)<br>Ice (A)<br>Vce (V)<br>**----- End of picture text -----**<br> **Fig. WF1** - Typ. S.C. Waveform @ TJ = 150°C using Fig. CT.3 8 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback October 30, 2014 ~~ee~~ IeaR IRG8P60N120KDPbF/IRG8P60N120KD-EPbF ## TO-247AC Package Outline Dimensions are shown in millimeters (inches) ## TO-247AC Part Marking Information Notes: This part marking information applies to devices produced after 02/26/2001 **==> picture [454 x 98] intentionally omitted <==** **----- Start of picture text -----**<br> EXAMPLE: THIS IS AN IRFPE30<br>WITH ASSEMBLY PART NUMBER<br>LOT CODE 5657 INTERNATIONAL<br>ASSEMBLED ON WW 35, 2001 RECTIFIER IRFPE30<br>LOGO 135H<br>IN THE ASSEMBLY LINE "H"<br>. 56 57<br>DATE CODE<br>ASSEMBLY YEAR 1 = 2001<br>Note: "P" in assembly line position<br>LOT CODE WEEK 35<br>indicates "Lead-Free"<br>LINE H<br>**----- End of picture text -----**<br> TO-247AC package is not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ Submit Datasheet Feedback October 30, 2014 www.irf.com © 2014 International Rectifier 9 IsaR IRG8P60N120KDPbF/IRG8P60N120KD-EPbF ## TO-247AD Package Outline Dimensions are shown in millimeters (inches) ## TO-247AD Part Marking Information **==> picture [398 x 90] intentionally omitted <==** **----- Start of picture text -----**<br> E X A M P L E : T H IS IS A N IR G P 3 0 B 1 2 0 K D -E<br>W IT H A S S E M B L Y P A R T N U M B E R<br>L O T C O D E 5 6 5 7 IN T E R N A T IO N A L Dog<br>A S S E M B L E D O N W W 3 5 , 2 0 0 0 R E C T IF IE R<br>L O G O I RGPR30B1 20KD 0 3 5 H -E |<br>IN T H E A S S E M B L Y L IN E "H "<br>5 6 5 7<br>D A T E C O D E<br>A S S E M B L Y YE A R 0 = 2 0 0 0<br>N o te : "P " in a s s e m b ly lin e p o s itio n<br>L O T C O D E W E E K 3 5<br>in d ic a te s "L e a d -F re e "<br>L IN E H<br>**----- End of picture text -----**<br> TO-247AD package is not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ Submit Datasheet Feedback October 30, 2014 www.irf.com © 2014 International Rectifier 10 1éaR IRG8P60N120KDPbF/IRG8P60N120KD-EPbF ## **Qualification Information[† ]** |**Qualification Information[† ]**||| |---|---|---| |**Qualification Level**|Industrial<br>(per JEDEC JESD47F)††|| |**Moisture Sensitivity Level**|TO-247AC|N/A| ||TO-247AD|N/A| |**RoHS Compliant**|Yes|| - Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/ - †† Applicable version of JEDEC standard at the time of product release. **IR WORLD HEADQUARTERS:** 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 11 www.irf.com ~~coax~~ ~~_~~ Submit Datasheet Feedback October 30, 2014 11 www.irf.com © 2014 International Rectifier
Updated at February 9, 2023
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
About Novapart
Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.
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When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
Request a quote →Compliant Alternatives
We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
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