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IRG7PK35UD1PBF
TRANSISTOR, BIPOLAR, N CHANNEL, 1.4KV, T
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single IGBTs
- TRANSISTOR, BIPOLAR, N CHANNEL, 1.4KV, TO-247AC; DC Collector Current:40A; Collector Emitter Saturation Voltage Vce(on):2V; Power Dissipation Pd:167W; Collector Emitter Voltage V
- MSL: -
- SVHC: No SVHC (17-Dec-2014)
- No. of Pins: 3Pins
- Product Range: -
- Power Dissipation: 167W
- Transistor Case Style: TO-247AC
- Operating Temperature Max: 150°C
- Continuous Collector Current: 40A
- Collector Emitter Voltage Max: 1.4kV
- Collector Emitter Saturation Voltage: 2V
| Delivery and price | |
|---|---|
| Units per pack | 10000 |
| Price | 1.46 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
International IRG7PK35UD1PbF IRG7PK35UD1-EPbF ## _**Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode**_ **==> picture [533 x 150] intentionally omitted <==** **----- Start of picture text -----**<br> VCES = 1400V C C C<br>IC = 20A, TC =100°C<br>TJ(max) = 150°C<br>G E E<br>VCE(ON) typ. = 2.0V @ IC = 20A G [C ] G [C ]<br>E<br>— IRG7PK35UD1PbF IRG7PK35UD1‐EPbF<br>n-channel<br>TO‐247AC TO‐247AD<br>Applications<br> Induction heating G C E<br> Microwave ovens Gate Collector Emitter<br>**----- End of picture text -----**<br> - Soft switching applications ## **Features** Low VCE(ON), ultra-low VF, and turn-off soft switching losses Positive VCE (ON) temperature coefficient and tight distribution of parameters Lead-free, RoHS compliant ~~Cn~~ ## **Benefits** High efficiency in a wide range of soft switching applications and switching frequencies Excellent current sharing in parallel operation Environmentally friendly |**Base part number**|**Package Type**|**Standard Pack**|**Standard Pack**|**Orderable Part Number**| |---|---|---|---|---| |||**Form**|**Quantity**|| |IRG7PK35UD1PbF|TO-247AC|Tube|25|IRG7PK35UD1PbF| |IRG7PK35UD1-EPbF|TO-247AD|Tube|25|IRG7PK35UD1-EPbF| ## **Absolute Maximum Ratings** **Parameter Max. Units** ~~| ns~~ VCES Collector-to-Emitter Voltage 1400 V ~~I~~ IC @ TC = 25°C Continuous Collector Current 40 ~~TT~~ IC @ TC = 100°C Continuous Collector Current 20 A ~~TT~~ ICM ~~**ee**~~ Pulse Collector Current, VGE = 15V ~~es~~ 200 ~~——_TFTFTFTEDNM’"’”—---’-11—~~ ILM Clamped Inductive Load Current, VGE = 20V 80 IF @ TC = 25°C Diode Continuous Forward Current 40 ~~Pe~~ IF @ TC = 100°C ~~nn~~ Diode Continuous Forward Current 20 ~~7 a~~ VGE Continuous Gate-to-Emitter Voltage ±30 V ~~TT——.-——->-$-—)-~~ PPDD @ T@ TCC = 2= 1005°C°C ~~eee~~ Maximum Power Dissipation Maximum Power Dissipation ~~dt~~ 167 67 W TJ Operating Junction and -40 to +150 TSTG Storage Temperature Range C Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) ~~ppee~~ Mounting Torque, 6-32 or M3 Screw 10 lbf·in (1.1 N·m) **Thermal Resistance Parameter Min. Typ. Max. Units** RJC (IGBT) Thermal Resistance Junction-to-Case (IGBT) ––– ––– 0.75 RJC (Diode) Thermal Resistance Junction-to-Case (Diode) ––– ––– 1.4 °C/W RCS Thermal Resistance, Case-to-Sink (flat, greased surface) ––– 0.24 ––– RJA Thermal Resistance, Junction-to-Ambient (typical socket mount) ––– 40 ––– 1 www.irf.com ~~cs~~ ~~_~~ 1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback February 27, 2014 ## ~~TOR~~ ## IRG7PK35UD1PbF/IRG7PK35UD1-EPbF ## **Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** ||**Parameter**|**Min.**|**Typ. **|**Max****Units**|**Units**|**Conditions**| |---|---|---|---|---|---|---| |Qg|Total Gate Charge (turn-on)|—|65|98|nC<br>|IC= 20A<br>VGE= 15V<br>VCC= 600V| |g<br>Qge|Gate-to-Emitter Charge (turn-on)|—|15|23||| |ge<br>Qgc<br>~~ee~~|Gate-to-Collector Charge (turn-on)<br>|—<br>|25<br>|38<br>||| |gc<br>Eoff<br>~~ee~~|Turn-Off Switching Loss<br>|—<br>|0.65<br>|0.90<br>|mJ <br>|IC= 20A, VCC= 600V, VGE= 15V<br>RG= 10, TJ= 25°C<br>Energy losses include tail| |td(off)<br>~~eei~~|Turn-Off delay time<br>~~i~~|—<br>~~i~~|150<br>~~i~~|170<br>~~i~~|ns<br>~~i~~|| |d(off)<br>tf<br>~~i~~|Fall time<br>~~i~~|—<br>~~i~~|75<br>~~i~~|95<br>~~i~~||| |Eoff <br>~~|~~<br>~~a~~|Turn-Off Switching Loss<br>~~|~~<br>|—<br>~~|~~<br>~~ee~~<br>|1.3<br>~~|~~<br>~~ee~~<br>|—<br>~~|~~<br>~~e~~<br>|mJ<br>~~|~~<br>~~ee~~|IC= 20A, VCC= 600V, VGE= 15V<br>RG= 10, TJ= 150°C<br>Energy losses include tail<br>~~|~~<br>~~e~~| |td(off)<br>~~a~~<br>~~a~~|Turn-Off delaytime<br>~~a~~<br>|—<br>~~a~~<br>~~ee~~<br>|180<br>~~a~~<br>~~ee~~<br>|—<br>~~a~~<br>~~e~~<br>|ns<br>~~a~~<br>~~ee~~|| |tf<br>~~a~~<br>~~a~~|Fall time<br>~~a~~<br>|—<br>~~a~~<br>~~ee~~<br>|180<br>~~a~~<br>~~ee~~<br>|—<br>~~a~~<br>~~e~~<br>||| |Cies<br>~~a~~|Input Capacitance<br>~~es~~|—<br>~~ee~~<br>~~es~~|2200<br>~~ee~~<br>~~es~~|—<br>~~e~~<br>~~es~~|pF<br>~~ee~~|VGE= 0V<br>VCC= 30V<br>f = 1.0MHz<br>~~e~~| |Coes<br>~~a ~~<br>~~I~~|Output Capacitance<br> ~~es~~<br>~~I~~|—<br>~~ee~~<br>~~es~~<br>~~I~~|70<br>~~ee ~~<br>~~es~~<br>~~I~~|—<br> ~~e~~<br>~~es~~||| |Cres<br>~~I~~|Reverse Transfer Capacitance<br>~~I~~|—<br>~~I~~|35<br>~~I~~|—||| |RBSOA|Reverse Bias Safe Operating Area|FULL SQUARE||||TJ= 150°C, IC= 80A<br>VCC= 1120V, Vp ≤ 1400V<br>RG= 10,VGE= +20V to 0V| ## **Notes:** - FBSOA operating conditions only. - Pulse width limited by max. junction temperature. - VCC = 80% (VCES), VGE = 20V, RG = 10. - R is measured at TJ of approximately 90°C. - Refer to AN-1086 for guidelines for measuring V(BR)CES safely. - Maximum limits are based on statistical sample size characterization. 2 ~~ee~~ 2 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback February 27, 2014 **==> picture [574 x 229] intentionally omitted <==** **----- Start of picture text -----**<br> IRG7PK35UD1PbF/IRG7PK35UD1-EPbF<br>TOR<br>40 200<br>30 150<br>BNE<br>20 PIN 100<br>|<br>10 BREXNG 50<br>0 EEEEN 0<br>25 50 75 100 125 150 25 50 75 100 125 150<br> TC (°C) TC (°C)<br>Ptot (W)<br>IC (A)<br>**----- End of picture text -----**<br> **==> picture [204 x 193] intentionally omitted <==** **----- Start of picture text -----**<br> 200<br>150<br>100<br>50<br>0<br>25 50 75 100 125 150<br> TC (°C)<br>Ptot (W)<br>**----- End of picture text -----**<br> **Fig. 2** - Power Dissipation vs. Case Temperature **Fig. 1** - Maximum DC Collector Current vs. Case Temperature **==> picture [206 x 193] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>100<br>10<br>1<br>10 100 1000 10000<br>VCE (V)<br>IC (A)<br>**----- End of picture text -----**<br> **==> picture [487 x 432] intentionally omitted <==** **----- Start of picture text -----**<br> 5.0 1000<br>IC = 600µA<br>4.6<br>J | | |<br>100<br>4.2 aN<br>3.8<br>10<br>P| NE<br>3.4<br>P| INS<br>1<br>||<br>3.0 10 100 1000<br>| | ISN<br>25 50 75 100 125 150<br>VCE (V)<br>TJ , Temperature (°C)<br>Fig. 3 - Typical Gate Threshold Voltage Fig. 4 - Reverse Bias SOA<br>vs. Junction Temperature TJ = 150°C; VGE = 20V<br>80 80<br>VGE = 18V VGE = 18V<br>60 aie VGE = 15V 60 tft V GE = 15V<br>V GE = 12V VGE = 12V<br>VGE = 10V VGE = 10V<br>VGE = 8.0V VGE = 8.0V<br>40 40<br>te nv inen<br>20 So 20 br<br>0 ALI 0 Att<br>0 2 4 6 8 10 0 2 4 6 8 10<br> VCE (V) VCE (V)<br>IC (A)<br>VGE(th), Gate Threshold Voltage<br>ICE (A) ICE (A)<br>**----- End of picture text -----**<br> **Fig. 5** - Typ. IGBT Output Characteristics TJ = -40°C; tp = 20µs **Fig. 6** - Typ. IGBT Output Characteristics TJ = 25°C; tp = 20µs 3 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback February 27, 2014 **==> picture [574 x 229] intentionally omitted <==** **----- Start of picture text -----**<br> IRG7PK35UD1PbF/IRG7PK35UD1-EPbF<br>TOR<br>80 80<br>VGE = 18V 70<br>VGE = 15V 25°C<br>60 V GE = 12V 60 150°C<br>VGE = 10V<br>VGE = 8.0V 50<br>40 40<br>Te<br>30<br>20 20<br>WW a<br>10<br>0 Val 0 —f——<br>0 2 4 6 8 10 0.0 1.0 2.0 3.0<br> VCE (V)<br>ICE (A) IF (A)<br>**----- End of picture text -----**<br> **==> picture [206 x 663] intentionally omitted <==** **----- Start of picture text -----**<br> 80<br>70<br>25°C<br>60 150°C<br>50<br>40<br>30<br>20<br>a<br>10<br>—f——<br>0<br>0.0 1.0 2.0 3.0<br> VF (V)<br>Fig. 8 - Typ. Diode Forward Voltage Drop<br>Characteristics<br>12<br>10<br>ICE = 40A<br>8 ee I CE = 20A<br>ICE = 10A<br>6<br>4 tttWei<br>2 |<br>0 =—=_<br>5 10 15 20<br> VGE (V)<br>Fig. 10 - Typical VCE vs. VGE<br>TJ = 25°C<br>80<br>60<br>Pf<br>40<br>TT yy<br>TJ = 25°C<br>20 T J = 150°C<br>;<br>0 aeraeYo<br>2 4 6 8 10 12<br> VGE (V)<br>VCE (V)<br>IF (A)<br>ICE (A)<br>**----- End of picture text -----**<br> **Fig. 8** - Typ. Diode Forward Voltage Drop Characteristics **Fig. 7** - Typ. IGBT Output Characteristics TJ = 150°C; tp = 20µs **==> picture [195 x 468] intentionally omitted <==** **----- Start of picture text -----**<br> 12<br>10<br>8 Ee ICE = 40A<br>ICE = 20A<br>6 ICE = 10A<br>4 aie<br>2 (=<br>0 ==<br>5 10 15 20<br> VGE (V)<br>Fig. 9 - Typical VCE vs. VGE<br>TJ = -40°C<br>12<br>10<br>8 th ICE = 40A<br>ICE = 20A<br>6 ICE = 10A<br>4 it —<br>2<br>=S—<br>0 ELrT<br>5 10 15 20<br> VGE (V)<br>Fig. 11 - Typical VCE vs. VGE<br>TJ = 150°C<br>VCE (V)<br>VCE (V)<br>**----- End of picture text -----**<br> **Fig. 12** - Typ. Transfer Characteristics VCE = 50V; tp = 20µs 4 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback February 27, 2014 ~~SSOOOO~~ **==> picture [575 x 466] intentionally omitted <==** **----- Start of picture text -----**<br> IRG7PK35UD1PbF/IRG7PK35UD1-EPbF<br>i #£4vR —_____<br>2.5 1000<br>2.0 td OFF<br>EOFF<br>1.5<br>100 t F<br>1.0<br>0.5<br>0.0 Zo 10 TE<br>0 10 20 30 40 0 10 20 30 40<br>IC (A) IC (A)<br>Fig. 13 - Typ. Energy Loss vs. IC Fig. 14 - Typ. Switching Time vs. IC<br>TJ = 150°C; VCE = 600V, RG = 10; VGE = 15V TJ = 150°C; VCE = 600V, RG = 10; VGE = 15V<br>2.6 10000<br>2.2<br>1000<br>EOFF tdOFF<br>1.8<br>100 tF<br>1.4<br>1.0 10<br>0 20 40 60 80 100 0 20 40 60 80 100<br>Rg () RG ()<br>Energy (mJ)<br>Swiching Time (ns)<br>Energy (mJ)<br>Swiching Time (ns)<br>**----- End of picture text -----**<br> **Fig. 15** - Typ. Energy Loss vs. RG TJ = 150°C; VCE = 600V, ICE = 20A; VGE = 15V **Fig. 16** - Typ. Switching Time vs. RG TJ = 150°C; VCE = 600V, ICE = 20A; VGE = 15V **==> picture [195 x 193] intentionally omitted <==** **----- Start of picture text -----**<br> 16<br>14 V CES = 600V 600V<br>VCES = 400VCES = 400V = 400V<br>12<br>10<br>8<br>FEE<br>6<br>4 GEEEE EE EE<br>2<br>0<br>0 PCE 10 20 30 40 50 60 70<br>Q G, Total Gate Charge (nC)<br>VGE, Gate-to-Emitter Voltage (V)<br>**----- End of picture text -----**<br> **==> picture [472 x 193] intentionally omitted <==** **----- Start of picture text -----**<br> 10000 16<br>Cies 14 V CES = 600V 600V<br>VCES = 400VCES = 400V = 400V<br>1000 12<br>10<br>100 8<br>Coes<br>Tr} = FEE<br>6<br>10 See 4 GEEEE EE EE<br>Cres<br>2<br>1 0<br>0 Eaneee 100 200 300 400 500 600 0 PCE 10 20 30 40 50 60<br>VCE (V) Q G, Total Gate Charge (nC)<br>Capacitance (pF)<br>VGE, Gate-to-Emitter Voltage (V)<br>**----- End of picture text -----**<br> **Fig. 18** - Typical Gate Charge vs. VGE **Fig. 17** - Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz ICE = 20A 5 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback February 27, 2014 ~~Ie~~ T¢aR IRG7PK35UD1PbF/IRG7PK35UD1-EPbF **==> picture [439 x 497] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>D = 0.50<br>ee<br>oy AAT<br>0.20<br>0.1 Sat ae ee aa all Ri (°C/W) i (sec)<br>0.10<br>R 1 R1 R 2 R2 R 3 R3 R 4 R4 R 5 R 5 0.009435 0.00000971<br>0.05 J J C C 0.134412 0.00005224<br>11 2 2 3 3 4 4 5 5 0.182875 0.00033830<br>0.02<br>Ci= iRi<br>P| 0.01 Ci= iRi 0 0.286292 0.00397000<br>0.01<br>=) PP a 0.136974 0.02151000<br>SINGLE PULSE Notes:<br>( THERMAL RESPONSE ) 1. Duty Factor D = t1/t2<br>2. Peak Tj = P dm x Zthjc + Tc<br>; es<br>0.001<br>1E-006 1E-005 0.0001 0.001 0.01 0.1 1<br>t1 , Rectangular Pulse Duration (sec)<br>Fig. 19 - Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)<br>10<br>1<br>D = 0.50<br>0.20 Ri (°C/W) i (sec)<br>0.1 Tr 0.05 0.10 0.020.01 Tlor J ma J1Ci= 1 LT iRi R1 R1 2 R 2 2 R2 Td R 3 3 R 33 R 4 4R 4 4 C C dL 0.017209 0.520952 0.550676 0.000012 0.000591 0.004389<br>Ci= iRi<br>0.01 er | 0.309755 0.032009<br>Notes:<br>SINGLE PULSE<br>( THERMAL RESPONSE ) 1. Duty Factor D = t1/t2<br>Beil 2. Peak Tj = P dm x Zthjc + Tc _T<br>0.001 Ait om EEeT<br>1E-006 1E-005 0.0001 0.001 0.01 0.1 1<br>t1 , Rectangular Pulse Duration (sec)<br>Fig. 20 - Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)<br>Thermal Response ( Z thJC )<br>Thermal Response ( Z thJC )<br>**----- End of picture text -----**<br> 6 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback February 27, 2014 ~~= © ™.~~ **==> picture [575 x 367] intentionally omitted <==** **----- Start of picture text -----**<br> IRG7PK35UD1PbF/IRG7PK35UD1-EPbF<br>LR#45<br>L<br>80 V +<br>- DUT VCC<br>Rg<br>. -aft [hE<br>Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit<br>diode clamp / C force<br>DUT<br>L<br>100K<br>D1 22K<br>-5V C sense<br>DUT<br>DUT / VCC G force 0.0075µF<br>DRIVER<br>Rg<br>**----- End of picture text -----**<br> **==> picture [190 x 167] intentionally omitted <==** **----- Start of picture text -----**<br> C force<br>100K<br>D1 22K<br>C sense<br>DUT<br>G force 0.0075µF<br>E sense<br>E force<br>**----- End of picture text -----**<br> **Fig.C.T.3** - Switching Loss Circuit **Fig.C.T.4** - BVCES Filter Circuit **==> picture [240 x 278] intentionally omitted <==** **----- Start of picture text -----**<br> 800 80<br>tf<br>700 70<br>ee<br>600 60<br>ee<br>500 50<br>400 ee 40<br>ee<br>300 30<br>90% ICE<br>200 20<br>Ko<br>100 10<br>5% VCE 10% ICE<br>0 0<br>Eoff Loss<br>-100 -10<br>-1.4 -0.4 0.6 1.6 2.6<br>time(µs)<br>Fig. WF1 - Typ. Turn-off Loss Waveform<br>@ TJ = 150°C using Fig. CT.3<br> (V) (A)<br>VCE ICE<br>**----- End of picture text -----**<br> 7 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback February 27, 2014 ~~I~~ I6aR IRG7PK35UD1PbF/IRG7PK35UD1-EPbF ## TO-247AC Package Outline Dimensions are shown in millimeters (inches) ## TO-247AC Part Marking Information Notes: This part marking information applies to devices produced after 02/26/2001 **==> picture [454 x 98] intentionally omitted <==** **----- Start of picture text -----**<br> EXAMPLE: THIS IS AN IRFPE30<br>WITH ASSEMBLY PART NUMBER<br>LOT CODE 5657 INTERNATIONAL<br>ASSEMBLED ON WW 35, 2001 RECTIFIER IRFPE30<br>LOGO Po 135H d<br>IN THE ASSEMBLY LINE "H"<br>_ —- 56 57<br>DATE CODE<br>ASSEMBLY YEAR 1 = 2001<br>Note: "P" in assembly line position<br>LOT CODE WEEK 35<br>indicates "Lead-Free"<br>LINE H<br>**----- End of picture text -----**<br> TO-247AC package is not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 8 www.irf.com © 2014 International Rectifier ~~| i—_~~ Submit Datasheet Feedback February 27, 2014 ~~ee~~ Submit Datasheet Feedback February 27, 2014 ItaR IRG7PK35UD1PbF/IRG7PK35UD1-EPbF ## TO-247AD Package Outline Dimensions are shown in millimeters (inches) ## TO-247AD Part Marking Information **==> picture [399 x 90] intentionally omitted <==** **----- Start of picture text -----**<br> E X A M P L E : T H IS IS A N IR G P 3 0 B 1 2 0 K D -E<br>W IT H A S S E M B L Y P A R T N U M B E R<br>L O T C O D E 5 6 5 7 IN T E R N A T IO N A L po @<br>A S S E M B L E D O N W W 3 5 , 2 0 0 0 R E C T IF IE R<br>L O G O IRGP30B1IeaR 20KD 0 3 5 H -E |<br>IN T H E A S S E M B L Y L IN E "H "<br>5 6 5 7<br>D A T E C O D E<br>A S S E M B L Y YE A R 0 = 2 0 0 0<br>N o te : "P " in a s s e m b ly lin e p o s itio n<br>L O T C O D E W E E K 3 5<br>in d ic a te s "L e a d -F re e "<br>L IN E H<br>**----- End of picture text -----**<br> TO-247AD package is not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ www.irf.com © 2014 International Rectifier Submit Datasheet Feedback February 27, 2014 9 16aR IRG7PK35UD1PbF/IRG7PK35UD1-EPbF ## **Qualification Information[† ]** |**Qualification Information[† ]**||| |---|---|---| |**Qualification Level**|Consumer††<br>(per JEDEC JESD47F)†††|| |**Moisture Sensitivity Level**|TO-247AC|N/A| ||TO-247AD|N/A| |**RoHS Compliant**|Yes|| - Qualification standards can be found at International Rectifier’s web site - - http://www.irf.com/product info/reliability †† Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: - http://www.irf.com/whoto call/salesrep/ - ††† Applicable version of JEDEC standard at the time of product release. **IR WORLD HEADQUARTERS:** 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 10 ~~_~~ ~~_~~ 10 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback February 27, 2014
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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