IRG7PH42UDPBF

IGBT, 85 A, 1.7 V, 320 W, 1.2 kV, TO-247AC, 3 Pins

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Manufacturer: INFINEON
Product type: Single IGBTs
No. of Pins: 3Pins
Power Dissipation: 320W
Transistor Mounting: Through Hole
Transistor Case Style: TO-247AC
Operating Temperature Max: 150°C
Continuous Collector Current: 85A
Collector Emitter Voltage Max: 1.2kV
Collector Emitter Saturation Voltage: 1.7V

Delivery and price
Units per pack	10
Price	9.3 €
Current stock	10+
Lead time	30 days

Datasheet

IRG7PH42UDPbF IRG7PH42UD-EP 

_**INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE**_ 

## **Features** 

- Low VCE (ON) trench IGBT technology 

- Low switching losses 

- Square RBSOA 

- 100% of the parts tested for ILM 

- Positive VCE (ON) temperature co-efficient 

- Ultra fast soft recovery co-pak diode 

- Tight parameter distribution 

- Lead-Free 

C VCES = 1200V IC = 45A, TC = 100°C G T = 150°C J(max) E VCE(on) typ. = 1.7V n-channel 

## **Benefits** 

- High efficiency in a wide range of applications 

- • Suitable for a wide range of switching frequencies due to low VCE (ON) and low switching losses 

- Rugged transient performance for increased reliability 

- Excellent current sharing in parallel operation 

## **Applications** 

- U.P.S. 

- Welding 

- Solar Inverter 

- Induction Heating 

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|||||
|---|---|---|---|
|C|C|
|G|[C E]|G|[C E]|
|TO-247AC|TO-247AD|
|IRG7PH42UDPbF|IRG7PH42UD-EP|
|G|C|E|
|Gate|Collector|Emitter|

**----- End of picture text -----**<br>


TO-247AC TO-247AD IRG7PH42UDPbF IRG7PH42UD-EP 

## **Absolute Maximum Ratings** 

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|||||||||||
|---|---|---|---|---|---|---|---|---|---|
|a|Parameter|Max.|Units|
|VCES|a|Collector-to-Emitter Voltage|1200|V|
|IC @ TC|= 25°C|oe|Continuous Collector Current (Silicon Limited)|85|
|IC @ TC|= 100°C|or|Continuous Collector Current (Silicon Limited)|45|
|INOMINAL|oo|Nominal Current|30|
|ICM|Pulse Collector Current, VGE = 15V|90|A|
|ILM|Clamped Inductive Load  Current, VGE = 20V|120|
|IF @ TC|= 25°C|or|Diode Continous Forward Current|85|
|IF @ TC|= 100°C|a|Diode Continous Forward Current|45|
|IFM|————Le|Diode Maximum Forward Current|120|
|VGE|Continuous Gate-to-Emitter Voltage|±30|V|
|PD @ TC|= 25°C|Maximum Power Dissipation|320|W|
|PD @ TC|= 100°C|Maximum Power Dissipation|130|
|Le|
|TJ|Operating Junction and|-55 to +150|
|TSTG|Storage Temperature Range|°C|
|po|Soldering Temperature, for 10 sec.|300|(0.063 in. (1.6mm) from case)|
|IKE|Mounting Torque, 6-32 or M3 Screw|10 lbf·in (1.1 N·m)|
|Thermal Resistance|
|Parameter|Min.|Typ.|Max.|Units|
|R|θ|JC|(IGBT)|Thermal Resistance Junction-to-Case-(each IGBT)|–––|–––|0.39|
|R|θ|JC|(Diode)|eS|Thermal Resistance Junction-to-Case-(each Diode)|–––|–––|0.56|°C/W|
|R|θ|CS|Thermal Resistance, Case-to-Sink (flat,|greased surface)|–––|0.24|–––|
|a|
|———_—|R|θ|JA|a|Thermal Resistance, Junction-to-Ambient (typical socket mount)|–––|40|–––|

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1 

10/26/09 

## IRG7PH42UDPbF/IRG7PH42UD-EP 

## **Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

||**Parameter**<br>~~GO~~|**Min.**<br>~~GO~~|**Typ.**<br>~~GO~~<br>~~DO~~|**Max.**<br>~~GO~~<br>~~DO~~|**Units**<br>~~GO~~<br>~~OOO~~|**Conditions**<br>~~GO~~<br>~~OOO~~|
|---|---|---|---|---|---|---|
|Qg|Total Gate Charge(turn-on)<br>~~a~~|—<br>~~a~~|157<br>~~DO~~<br>~~a~~|236<br>~~DO ~~<br>~~a~~|nC<br> ~~OOO~~<br>~~a~~<br>~~a~~|IC= 30A<br>VGE= 15V<br>VCC= 600V<br>~~OOO~~|
|Qge<br>~~a~~|Gate-to-Emitter Charge(turn-on)<br>~~a~~<br>~~a~~|—<br>~~a~~<br>~~a~~|21<br>~~a~~<br>~~a~~|32<br>~~a~~<br>~~a~~|||
|Qgc<br>~~a~~|Gate-to-Collector Charge(turn-on)<br>~~a~~|—<br>~~a~~|69<br>~~a~~|104<br>~~a~~|||
|Eon<br>~~a~~<br>~~a~~|Turn-On SwitchingLoss<br>~~a~~<br>~~a~~<br>~~a~~|—<br>~~a~~<br>~~a~~<br>~~a~~|2105<br>~~a~~<br>~~a~~<br>~~a~~|2374<br>~~a~~<br>~~a~~<br>~~a~~|µJ<br>~~a~~<br>~~a~~|IC= 30A, VCC= 600V, VGE= 15V<br>RG= 10Ω, L = 200µH,TJ= 25°C<br>Energy losses include tail & diode reverse recovery|
|Eoff<br>~~a~~|Turn-Off SwitchingLoss<br>~~a~~|—<br>~~a~~|1182<br>~~a~~|1424<br>~~a~~|||
|Etotal<br>~~a~~<br>~~a~~|Total SwitchingLoss<br>~~a~~<br>~~a~~<br>~~a~~|—<br>~~a~~<br>~~a~~<br>~~a~~|3287<br>~~a~~<br>~~a~~<br>~~a~~|3798<br>~~a~~<br>~~a~~<br>~~a~~|||
|td(on)<br>~~a~~|Turn-On delaytime<br>~~a~~|—<br>~~a~~|25<br>~~a~~|34<br>~~a~~|ns<br>||
|tr<br>~~a~~|Rise time<br>~~a~~<br>~~a~~|—<br>~~a~~<br>~~a~~|32<br>~~a~~<br>~~a~~|41<br>~~a~~<br>~~a~~|||
|td(off)<br>~~a~~|Turn-Off delaytime<br>~~es~~<br>~~a~~|—<br>~~es~~<br>|229<br>~~es~~<br>|271<br>~~es~~<br>|||
|tf<br>~~a~~|Fall time<br>~~a~~|—<br>|63<br>|86<br>|||
|Eon<br>~~a~~<br>~~a~~|Turn-On SwitchingLoss<br>~~aa~~<br>~~a~~|—<br>~~a~~<br>~~a~~|2978<br>~~a~~<br>~~a~~|—<br>~~a~~<br>~~a~~|I<br>µJ<br>~~a~~<br>~~a~~|IC= 30A, VCC= 600V, VGE=15V<br>RG=10Ω, L=200µH, TJ= 150°C<br>Energy losses include tail & diode reverse recovery<br>@|
|Eoff<br>~~a~~|Turn-Off SwitchingLoss<br>~~a~~|—<br>~~a~~|1968<br>~~a~~|—<br>~~a~~|||
|Etotal<br>~~a~~<br>~~a~~|Total SwitchingLoss<br>~~a~~<br>~~a~~<br>~~a~~|—<br>~~a~~<br>~~a~~<br>~~a~~|4946<br>~~a~~<br>~~a~~<br>~~a~~|—<br>~~a~~<br>~~a~~<br>~~a~~|||
|td(on)<br>~~a~~|Turn-On delaytime<br>~~a~~|—<br>~~a~~|19<br>~~a~~|—<br>~~a~~|ns<br>~~a~~||
|tr<br>~~a~~<br>~~a~~|Rise time<br>~~a~~<br>~~a~~<br>~~a~~|—<br>~~a~~<br>~~a~~<br>~~a~~|32<br>~~a~~<br>~~a~~<br>~~a~~|—<br>~~a~~<br>~~a~~<br>~~a~~|||
|td(off)<br>~~a~~|Turn-Off delaytime<br>~~a~~|—<br>~~a~~|290<br>~~a~~|—<br>~~a~~|||
|tf<br>~~a~~|Fall time<br>~~a~~<br>~~ee~~|—<br>~~a~~<br>~~ee~~|154<br>~~a~~<br>~~ee~~|—<br>~~a~~<br>~~ee~~|||
|Cies<br>~~a~~|Input Capacitance<br>~~ee~~<br>~~a~~<br>~~a~~|—<br>~~ee~~<br>~~a~~<br>~~a~~|3338<br>~~ee~~<br>~~a~~<br>~~a~~|—<br>~~ee~~<br>~~a~~<br>~~a~~|pF<br>~~a~~<br>~~a~~|VGE= 0V<br>VCC= 30V<br>f = 1.0Mhz<br>~~a~~|
|Coes<br>~~a~~|Output Capacitance<br>~~a~~|—<br>~~a~~|124<br>~~a~~|—<br>~~a~~|||
|Cres<br>~~a~~|Reverse Transfer Capacitance<br>~~a~~<br>~~a~~|—<br>~~a~~<br>~~a~~|75<br>~~a~~<br>~~a~~|—<br>~~a~~<br>~~a~~|||
|RBSOA|Reverse Bias Safe Operating Area|FULL SQUARE||||TJ= 150°C, IC= 120A<br>VCC= 960V, Vp =1200V<br>Rg= 10Ω,VGE= +20V to 0V|
|Erec|Reverse RecoveryEnergyof the Diode<br>~~a~~|—<br>~~a~~|1475<br>~~a~~|—<br>~~a~~|µJ<br>~~a~~|TJ= 150°C<br>VCC= 600V, IF= 30A<br>Rg = 10Ω, L =1.0mH<br>~~a~~<br>~~a~~|
|trr<br>~~a~~|Diode Reverse RecoveryTime<br>~~a~~<br>~~a~~|—<br>~~a~~<br>~~a~~|153<br>~~a~~<br>~~a~~|—<br>~~a~~<br>~~a~~|ns<br>~~a~~<br>~~a~~||
|Irr<br>~~a~~|Peak Reverse RecoveryCurrent<br>~~a~~|—<br>~~a~~|34<br>~~a~~|—<br>~~a~~|A<br>~~a~~||



## **Notes:** 

VCC = 80% (VCES), VGE = 20V, L = 22µH, RG = 10 Ω . 

Pulse width limited by max. junction temperature. 

Refer to AN-1086 for guidelines for measuring V(BR)CES safely. 

R θ is measured at T, of approximately 90°C. Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 78A.  Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. 

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2 

IRG7PH42UDPbF/IRG7PH42UD-EP 

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TeaR Rectifier<br>60<br>For both:<br>Duty cycle : 50%<br>50 Tj = 150°C<br>e t ET ll<br>Tsink = 90°C<br>Gate drive as specified<br>40 Power Dissipation = 95W<br>e e<br>30 a<br>Square wave:<br>60% of rated<br>         voltage<br>20<br>I<br>10 Ideal diodes<br>|eD e Nill<br>AU NST<br>a aee<br>0<br>0.1 1 10 100<br>f , Frequency ( kHz )<br>Fig. 1  - Typical Load Current vs. Frequency<br>              (Load Current = IRMS of fundamental)<br>100 350<br>pf ff fp 300 = NERR<br>80<br>250<br>60<br>P EER7 F AN\\<br>200<br>40 150<br>P INE P CAN<br>100<br>20<br>P EPIN S ERERNEE<br>50<br>ro ENT S RR REANE REANE<br>0<br>p j | | iN | 0 PEELEEL<br>25 50 75 100 125 150 175<br>0 20 40 60 80 100 120<br> TC (°C)<br>IC (A) Ptot (W)<br>Load Current  ( A )<br>**----- End of picture text -----**<br>


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350<br>300 = NERR<br>250<br>F AN\\<br>200<br>150<br>P CAN EEE<br>100<br>S ERERNEE<br>50<br>S RR REANE REANE<br>0 PEELEEL ELIMI<br>0 20 40 60 80 100 120 140 160<br> TC (°C)<br>Ptot (W)<br>**----- End of picture text -----**<br>


**Fig. 1** - Maximum DC Collector Current vs. Case Temperature 

**Fig. 2** - Power  Dissipation vs. Case Temperature 

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1000<br>100 Cr<br>10<br>e reee eens eee<br>1 nT<br>10 100 1000 10000<br>VCE (V)<br>IC (A)<br>**----- End of picture text -----**<br>


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1000<br>100<br>10µsec<br>10<br>A R wl<br>DC 100µsec<br>1 P TT TORT Ts TUT<br>1msec<br>Tc = 25°C<br>Tj = 150°C<br>Single Pulse<br>“HEU<br>0.1<br>1 10 100 1000 10000<br>VCE (V)<br>IC (A)<br>**----- End of picture text -----**<br>


**Fig. 3** - Forward SOA TC = 25°C, TJ ≤ 150°C; VGE =15V 

**Fig. 4** - Reverse Bias SOA TJ = 150°C; VGE = 20V 

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## IRG7PH42UDPbF/IRG7PH42UD-EP 

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120<br>VGE = 18V<br>100 VGE = 15V<br>a y /2 VGE = 12V<br>VGE = 10V<br>80 VGE = 8.0V<br>60<br>y f if<br>40<br>e f fi<br>20<br>0<br>(yi | | |<br>0 2 4 6 8 10<br> VCE (V)<br>ICE (A)<br>**----- End of picture text -----**<br>


**Fig. 5** - Typ. IGBT Output Characteristics TJ = -40°C; tp = 80µs 

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120<br>VGE = 18V<br>100 VGE = 15V<br>T E VGE = 12V<br>VGE = 10V<br>80 VGE = 8.0V<br>H E<br>60<br>Pa<br>40<br>S l a o<br>fi<br>20<br>0<br>f7 | | |<br>0 2 4 6 8 10<br> VCE (V)<br>Fig. 7  - Typ. IGBT Output Characteristics<br>TJ = 150°C; tp = 80µs<br>12<br>10<br>| iP |<br>|<br>8<br>ICE = 15A<br>ICE = 30A<br>6<br>ICE = 60A<br>|e<br>42 eo om r<br>=<br>0<br>4 8 12 16 20<br> VGE (V)<br>ICE (A)<br>VCE (V)<br>**----- End of picture text -----**<br>


**Fig. 9** - Typical VCE vs. VGE TJ = -40°C 

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120<br>VGE = 18V<br>100 VGE = 15V<br>| [i] [it] VGE = 12V<br>VGE = 10V<br>80 VGE = 8.0V<br>60<br>i ay<br>40<br>vane<br>20<br>0<br>Ji| | |<br>0 2 4 6 8 10<br> VCE (V)<br>Fig. 6  - Typ. IGBT Output Characteristics<br>TJ = 25°C; tp = 80µs<br>120<br>100<br>T -40°C T<br>25°C<br>80 150°C<br>a<br>60<br>Ay<br>40<br>o s//een<br>20 4 a<br>0<br>A |<br>0.0 1.0 2.0 3.0 4.0 5.0 6.0<br> VF (V)<br>ICE (A)<br>IF (A)<br>**----- End of picture text -----**<br>


**Fig. 8** - Typ. Diode Forward Characteristics tp = 80µs 

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12<br>10<br>i t |p<br>8 l f<br>ICE = 15A<br>6 ICE = 30A<br>ICE = 60A<br>le<br>4 i A<br>2<br>( Cc<br>0<br>==<br>4 8 12 16 20<br> VGE (V)<br>VCE (V)<br>**----- End of picture text -----**<br>


**Fig. 10** - Typical VCE vs. VGE TJ = 25°C 

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## IRG7PH42UDPbF/IRG7PH42UD-EP 

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12 120<br>10 100<br>i po) i<br>8 i t 80 P | lf<br>ICE = 15A 60 TJ = 25°C<br>6 ICE = 30A T = 150°C<br>J<br>ICE = 60A<br>He e 40 oe<br>4<br>| 20 b e<br>2 a y /o<br>0<br>0<br>| tT tT tT 4 CA 6 8 10 12<br>4 8 12 16 20<br> VGE, Gate-to-Emitter Voltage (V)<br> VGE (V)<br>Fig. 11  - Typical VCE vs. VGE Fig. 12  - Typ. Transfer Characteristics<br>TJ = 150°C VCE = 50V<br>7000 1000<br>6000<br>tF<br>S unE5” ESEEEE<br>5000<br>tdOFF<br>4000 A P SE CC<br>EON 100<br>3000<br>2000 S| a<br>s a e? EOFF 22m m n n tR eaoe<br>1000<br>2a |e r tdON<br>aan cam e<br>0 10<br>0 10 20 30 40 50 60 0 10 20 30 40 50 60<br> IC (A) IC (A)<br>Fig. 13  - Typ. Energy Loss vs. IC Fig. 14  - Typ. Switching Time vs. IC<br>TJ = 150°C; L = 200µH; VCE = 600V, RG = 10J = 150°C; L = 200µH; VCE = 600V, RG = 10 = 150°C; L = 200µH; VCE = 600V, RG = 10CE = 600V, RG = 10= 600V, RG = 10G = 10= 10 Ω ; VGE = 15VGE = 15V= 15V TJ = 150°C; L = 200µH; VCE = 600V, RG = 10J = 150°C; L = 200µH; VCE = 600V, RG = 10 = 150°C; L = 200µH; VCE = 600V, RG = 10CE = 600V, RG = 10= 600V, RG = 10G = 10= 10 Ω ; VGE GE = 15V<br>6000 10000<br>5000 T oy f e<br>1000<br>4000 EON tdOFF<br>3000 oA EOFF L tF e<br>a p  l an e ec eee<br>A 100 < a<br>tR<br>2000<br>tdON<br>1000 10 ee ee ee ee ee<br>“tet ft e f ff<br>0 20 40 60 80 100 0 20 40 60 80 100<br>RG ( Ω ) RG ( Ω )<br>VCE (V)<br>ICE, Collector-to-Emitter Current  (A)<br>Swiching Time (ns)<br>Energy (µJ)<br>Energy (µJ)<br>Swiching Time (ns)<br>**----- End of picture text -----**<br>


TJ = 150°C; L = 200µH; VCE = 600V, RG = 10J = 150°C; L = 200µH; VCE = 600V, RG = 10 = 150°C; L = 200µH; VCE = 600V, RG = 10CE = 600V, RG = 10= 600V, RG = 10G = 10= 10 Ω ; VGE = 15VGE = 15V= 15V 

TJ = 150°C; L = 200µH; VCE = 600V, RG = 10J = 150°C; L = 200µH; VCE = 600V, RG = 10 = 150°C; L = 200µH; VCE = 600V, RG = 10CE = 600V, RG = 10= 600V, RG = 10G = 10= 10 Ω ; VGE GE = 15V 

**Fig. 16** - Typ. Switching Time vs. RG TJ = 150°C; L = 200µH; VCE = 600V, ICE = 30A; VGE = 15V 

**Fig. 15** - Typ. Energy Loss vs. RG TJ = 150°C; L = 200µH; VCE = 600V, ICE = 30A; VGE = 15V 

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## IRG7PH42UDPbF/IRG7PH42UD-EP 

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50 40<br>RG =  5.0Ω<br>aoe N EE<br>40 35<br>H RG = 10Ω a t er RG = 47Ω |<br>30 30<br>pe ct E NED<br>20 RG = 100Ω 25<br>e aeeee E RNE<br>ALLEL E ES|<br>10 20<br>15 20 25 30 35 40 45 50 55 60 0 20 40 60 80 100<br>IF (A) RG ( Ω)<br>Fig. 17  - Typ. Diode IRR vs. IF Fig. 18  - Typ. Diode IRR vs. RG<br>TJ = 150°C TJ = 150°C<br>40 9000<br>8000 60A<br>35 f i y HA 5.0Ω<br>7000<br>10Ω<br>6000 47Ω<br>T V} a a paGn m<br>30<br>Ra 30A<br>5000 100Ω<br>4000<br>25 ] iJ, Ly S(O R veN Nn<br>15A<br>3000<br>20 A LLL 2000 C(pA ECE REE<br>0 200 400 600 800 1000 1200 0 200 400 600 800 1000 1200 1400<br>diF /dt (A/µs) diF /dt (A/µs)<br>IRR (A) IRR (A)<br>IRR (A)<br>QRR (nC)<br>**----- End of picture text -----**<br>


**Fig. 19** - Typ. Diode IRR vs. diF/dt VCC = 600V; VGE = 15V; IF = 30A; TJ = 150°C 

**Fig. 20** - Typ. Diode QRR vs. diF/dt VCC = 600V; VGE = 15V; TJ = 150°C 

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3500<br>RG = 5.0 Ω<br>3000 R G = 10 Ω<br>RG = 47 Ω Sean<br>2500 R G = 100 Ω<br>Spe<br>2000<br>|LPREETEAA<br>1500<br>A eB<br>1000<br>P aeennia<br>A t<br>500 ET ET<br>15 20 25 30 35 40 45 50 55 60<br>IF (A)<br>Energy (µJ)<br>**----- End of picture text -----**<br>


**Fig. 21** - Typ. Diode ERR vs. IF TJ = 150°C 

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## IRG7PH42UDPbF/IRG7PH42UD-EP 

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10000 16<br>————— — 14 VCES = 600V i<br>Cies 12 VCES = 400V<br>1000<br>_———— 10 WV),<br>es ee ee ee eee eee 8 | | | |/f<br>6<br>100<br>Coes<br>4<br>leEE ee Oe<br>S s 2 ve | | | |<br>Cres<br>pp Pe Ert Pit<br>10 0 | | |<br>0 100 200 300 400 500 600 0 20 40 60 80 100 120 140 160 180<br>VCE (V) Q G, Total Gate Charge (nC)<br>Fig. 22  - Typ. Capacitance vs. VCE Fig. 23  - Typical Gate Charge vs. VGE<br> VGE= 0V; f = 1MHz  ICE = 30A; L = 600µH<br>1<br>D = 0.50 a a ee<br>0.1<br>ern 0.20 ==,<br>0.10<br>er<br>0.05 es  a 0 |)eePLP Pe<br>0.01 0.010.02 a e I τ J τ J R1 R1 R2 R2 R3 R3 R4R4 τ C τ ee Ri (°C/W)   0.1306     0.000313  τ i (sec) ee |<br>H E τ 1 τ 1 RR τ 2 τ 2 τ 3 τ 3 τ 4 τ 4 0.1752     0.0020560.0814     0.008349<br>es eo i i { T ——}<br>0.001 Ci=  τ i / Ri 0.0031     0.043100<br>e e 0 Ci i / Ri es<br>SINGLE PULSE Notes:<br>1. Duty Factor D = t1/t2<br>( THERMAL RESPONSE )<br>PE 2. Peak Tj = P dm x Zthjc + Tc ll<br>0.0001<br>1E-006 1E-005 0.0001 0.001 0.01 0.1<br>t1 , Rectangular Pulse Duration (sec)<br>Fig 24.   Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)<br>1<br>A D = 0.50 et a ame a<br>0.20<br>0.1 ere<br>h aAz 0.050. 10 aeece eeeeee e see ee eeeee! eel<br>0.01 a e 7 0.020.01 ee eee e ee ae eee τ J τ J τ 1 τ 1 R1 R ne 1 τ 2 τ R22 R2 R τ 33 R τ 3 3 τ R4 τ 4R4 4 ee τ C τ PUL| Ri (°C/W)   0.1254     0.0005150.0937     0.0005150.1889     0.001225  τ i (sec) aan<br>Se) aa ee i i { T ee eee<br>0.001 Ci= Ci τ i / Rii / Ri 0.1511     0.018229<br>e e el el<br>SINGLE PULSE<br>Notes:<br>( THERMAL RESPONSE ) 1. Duty Factor D = t1/t2<br>2. Peak Tj = P dm x Zthjc + Tc<br>VAmEe ee FEHR ellFr FH l<br>0.0001<br>1E-006 1E-005 0.0001 0.001 0.01 0.1 1<br>t1 , Rectangular Pulse Duration (sec)<br>VGE, Gate-to-Emitter Voltage (V)<br>Capacitance (pF)<br>Thermal Response ( Z thJC )<br>Thermal Response ( Z thJC )<br>**----- End of picture text -----**<br>


**Fig. 25.** Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) 

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## IRG7PH42UDPbF/IRG7PH42UD-EP 

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L<br>DUT VCC<br>0<br>1K<br>**----- End of picture text -----**<br>


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L<br>80 V +<br>- DUT VCC<br>Rg<br>**----- End of picture text -----**<br>


**Fig.C.T.1** - Gate Charge Circuit (turn-off) 

**Fig.C.T.2** - RBSOA Circuit 

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diode clamp /<br>DUT<br>L<br>-5V<br>DUT /<br>VCC<br>DRIVER<br>Rg<br>**----- End of picture text -----**<br>


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R = [VCC]<br>ICM<br>VCC<br>DUT<br>Rg<br>**----- End of picture text -----**<br>


**Fig.C.T.3** - Switching Loss Circuit 

**Fig.C.T.4** - Resistive Load Circuit 

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C force<br>100K<br>D1 22K<br>C sense<br>DUT<br>G force<br>0.0075µF<br>E sense<br>E force<br>**----- End of picture text -----**<br>


**Fig.C.T.5** - BVCES Filter Circuit 

www.irf.com 

8 

## IRG7PH42UDPbF/IRG7PH42UD-EP 

**==> picture [501 x 252] intentionally omitted <==**

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900 90 900 90<br>800 eee 80 800 ee 80<br>tf tr<br>700 70 700 70<br>TEST CURRENT<br>600 60 600 60<br>500 at ns 50 500 ee 90% test  Oe 50<br>90% ICE current<br>400 tty 40 400 eet 40<br>300 w§f 5% V CE 30 300 ie e e 30<br>200 a yee 5% ICE 20 200 —ee) 10% test current \y\ eeeo™ 5% VCE . 20<br>100 10 100 10<br>0 0 0 0<br>Eoff Loss Eon Loss<br>-100 -10 -100 sa EE -10<br>-0.5 0 0.5 1 1.5 2 9.4 9.6 9.8 10 10.2<br>time(µs) time (µs)<br> (V)  (A)  (V)  (A)<br>VCE ICE VCE ICE<br>**----- End of picture text -----**<br>


**Fig. WF1** - Typ. Turn-off Loss Waveform @ TJ = 150°C using Fig. CT.4 

**Fig. WF2** - Typ. Turn-on Loss Waveform @ TJ = 150°C using Fig. CT.4 

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40<br>EREC<br>30<br>tRR<br>20<br>10<br>0<br>-10 10%<br>Peak<br>-20 Peak IRR<br>IRR<br>-30<br>-40 dv<br>-0.25 0.00 0.25 0.50 0.75 1.00<br>time (µS)<br>(A)<br>F<br>I<br>**----- End of picture text -----**<br>


**Fig. WF3** - Typ. Diode Recovery Waveform @ TJ = 150°C using Fig. CT.4 

www.irf.com 

9 

## IRG7PH42UDPbF/IRG7PH42UD-EP 

**TO-247AC package is not recommended for Surface Mount Application.** 

www.irf.com 

10 

## IRG7PH42UDPbF/IRG7PH42UD-EP 

TO-247AD package is not recommended for Surface Mount Application. 

Data and specifications subject to change without notice. This product has been designed and qualified for Industrial market. Qualification Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 10/2009 

www.irf.com 

11

Updated at February 9, 2023

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