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IRG4PH50SPBF
IGBT, 57 A, 1.47 V, 200 W, 1.2 kV, TO-247AC, 3 Pins
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single IGBTs
- No. of Pins: 3Pins
- Power Dissipation: 200W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-247AC
- Operating Temperature Max: 150°C
- Continuous Collector Current: 57A
- Collector Emitter Voltage Max: 1.2kV
- Collector Emitter Saturation Voltage: 1.47V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 2.78 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## PO 85528 IRG4PH50SPbF INSULATED GATE BIPOLAR TRANSISTOR **Features** **==> picture [118 x 12] intentionally omitted <==** **----- Start of picture text -----**<br> Standard Speed IGBT<br>**----- End of picture text -----**<br> **==> picture [195 x 97] intentionally omitted <==** **----- Start of picture text -----**<br> C<br>VCES =1200V<br>V = 1.47V<br>G CE(on) typ.<br>E @VGE = 15V, IC = 33A<br>n-channel<br>**----- End of picture text -----**<br> TO-247AC ## **Absolute Maximum Ratings** ||**Parameter**|Max.|**Units**| |---|---|---|---| |VCES|Collector-to-Emitter Voltage<br>~~——_————~~|1200<br>~~——_————~~|V<br>~~ie~~| |IC@ TC= 25°C|Continuous Collector Current<br>~~——_————~~|57<br>~~——_————~~|A<br>~~ie~~| |IC@ TC= 100°C|Continuous Collector Current<br>~~——_————~~|33<br>~~——_————~~|| |ICM|Pulsed Collector Current<br>~~——_————~~|114<br>~~——_————~~|| |ILM|Clamped Inductive Load Current<br>~~——_————~~|114<br>~~——_————~~|| |VGE|Gate-to-Emitter Voltage<br>~~——_————~~|± 20<br>~~——_———— ~~<br>~~po~~|V<br> ~~ie~~| ||TransientGate-to-Emitter Voltage<br>~~————————————~~|± 30<br>~~pO~~<br>~~————————————~~|| |EARV<br>PD@ TC=25°|Reverse Voltage Avalanche Energy<br>~~————————————~~|270<br>~~pO~~<br>~~————————————~~|mJ| ||Maximum Power Dissipation<br>~~————————————~~|200<br>~~————————————~~|W<br>~~po~~| |PD@ TC=100°<br>~~po~~|Maximum Power Dissipation<br>~~————————————~~<br>~~po~~|80<br>~~————————————~~<br>~~po~~|| |TJ<br>TSTG<br>~~po~~|Operating Junction and<br>Storage Temperature Range<br>~~po~~|-55 to + 150<br>~~po~~|°C<br>~~po~~| |~~po~~|SolderingTemperature,for 10 sec.<br>~~po~~|300(0.063 in.(1.6mm)from case)<br>~~po~~|| |~~po~~|MountingTorque, 6-32or M3 Screw.<br>~~po~~|10lbf·in(1.1 N·m)<br>~~po~~|~~po~~| www.irf.com 1 07/08/08 ## IRG4PH50SPbF ## **Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** ||**Parameter**|**Min. **|**Typ. **|**Max. **|**Units**|**Conditions**| |---|---|---|---|---|---|---| |V(BR)CES<br>a|Collector-to-Emitter Breakdown Voltage<br>se|1200<br>se|—<br>Gf|—<br>Gf|V<br>Gf|VGE= 0V, IC= 250µA| |V(BR)ECS<br>ee|Emitter-to-Collector Breakdown Voltage<br>ee|18<br>ee|—|—|V|VGE= 0V, IC= 1.0 A| |∆V(BR)CES/∆TJ <br>ee<br>GO|Temperature Coeff. of Breakdown Voltage<br>ee<br>GO<br>||—<br>ee<br>GO<br>||1.22<br>GO<br>|—<br>GO<br>|V/°C<br>GO<br>|VGE= 0V, IC= 2.0 mA| |VCE(ON)<br>~~Po~~<br>~~a~~|Collector-to-Emitter Saturation Voltage<br>|<br>|<br>~~|~~<br>~~eee~~|—<br>||<br>|<br>||1.47<br>|<br>||1.7<br>|||<br>ly|IC= 33A VGE= 15V<br>IC= 57A<br>See Fig.2, 5<br>IC= 33A , TJ= 150°C<br>~~ne~~| |||—<br>|<br>|<br>||1.75<br><br>||—<br>||| |||—<br>|<br>|<br>~~||~~<br>~~eee~~|1.55<br>||—||| |VGE(th)<br>~~Po~~<br>~~a~~|Gate Threshold Voltage<br>~~|~~<br>~~eee~~|3.0<br>~~||~~<br>~~eee~~|—|6.0||VCE= VGE, IC= 250µA<br>~~ne~~| |DVGE(th)/DTJ <br>~~Po~~<br>~~a~~|Temperature Coeff. of Threshold Voltage<br>~~|~~<br>~~eee~~<br>~~se~~|—<br>~~| |~~<br>~~eee~~<br>~~se~~|-11<br>~~Ge~~|—<br>~~Ge~~|mV/°C <br>~~Ge~~|VCE= VGE, IC= 250µA<br>~~ne~~| |gfe<br>~~a~~|Forward Transconductance<br>ZeroGateVoltageCollectorCurrent<br>||27<br>|<br>||40<br>~~CT~~|—<br>~~CT~~|S<br>~~CT~~HA~~PO~~|VCE= 100V, IC= 33A<br>~~PO~~| ||Zero Gate Voltage Collector Current<br>||—<br>|<br>||—<br>~~CT~~|250<br>~~CT~~|~~CT~~ HA~~PO~~<br>ee|VGE= 0V, VCE= 1200V<br>~~PO~~| |||—<br>|<br>||—<br> ~~CT~~|2.0<br>~~CT~~||VGE= 0V, VCE= 10V, TJ= 25°C<br>~~PO~~| |||—|—<br>ee|1000<br>ee||VGE= 0V, VCE= 1200V, TJ= 150°C| |IGES<br>~~a~~|Gate-to-Emitter Leakage Current|—|—|±100|nA|VGE= ±20V| ## **Switching Characteristics @ TJ = 25°C (unless otherwise specified)** ||**Parameter**|**Min. **|**Typ. **|**Max. **|**Units**|**Conditions**| |---|---|---|---|---|---|---| |Qg<br>aee<br><br>a|Total Gate Charge (turn-on)<br>ee<br><br>|—<br>ee<br><br>|167<br>ee<br><br>|251<br>ee<br>ee<br>|nC|IC= 33A<br>VCC= 400V<br>See Fig. 8<br>VGE= 15V| |Qge<br>aee<br>a|Gate - Emitter Charge (turn-on)<br>ee<br>|—<br>ee<br>|25<br>ee<br>|38<br>eeee<br>||| |Qgc<br><br>aee|Gate - Collector Charge(turn-on)<br><br>ee|—<br><br>ee|55<br><br>ee|83<br>ee<br>ee||| |td(on)<br>~~aee~~|Turn-On Delay Time<br>~~ee~~|—<br>~~ee~~|32<br>~~ee~~|—<br>~~ee~~||TJ= 25°C<br>IC= 33A, VCC= 960V<br>VGE= 15V, RG= 5.0Ω<br>Energy losses include "tail"<br>See Fig. 9, 10, 14| |tr<br>a|Rise Time|—|29|—||| |td(off)<br>a~~ee~~|Turn-Off Delay Time<br>~~ee~~|—<br>~~ee~~|845<br>~~ee~~|1268<br>~~ee~~||| |tf<br>~~a~~<br>a|Fall Time<br>~~a~~<br>|—<br>~~a~~<br>|425<br>~~a~~<br>ee<br>|638<br>~~a~~<br>ee<br>||| |Eon<br>~~a~~<br>ee<br>a|Turn-On Switching Loss<br>~~a~~<br>ee<br>|—<br>~~a~~<br>ee<br>|1.80<br>~~a~~<br>ee<br>ee<br>|—<br>~~a~~<br>ee<br>ee<br>|mJ|| |Eoff<br>aee|Turn-Off Switching Loss<br>ee|—<br>ee|19.6<br>ee<br>ee|—<br>ee<br>ee||| |Ets<br>aee|Total Switching Loss<br>ee|—<br>ee|21.4<br>ee|44<br>ee||| |td(on)<br>—|Turn-On Delay Time<br>—|—<br>—|32<br>—|—<br>—|a|TJ= 150°C,<br>IC= 33A, VCC= 960V<br>VGE= 15V, RG= 5.0Ω<br>Energy losses include "tail"<br>See Fig. 10,11,14<br>a| |tr<br>—<br>a|Rise Time<br>—<br>a|—<br>—<br>a|30<br>—<br>a|—<br>—<br>a||| |td(off)<br>a<br>ee|Turn-Off Delay Time<br>a<br>ee|—<br>a<br>ee|1170<br>a<br>ee|—<br>a<br>ee||| |tf<br>aee|Fall Time<br>ee|—<br>ee|1000<br>ee|—<br>ee||| |Ets<br>Pe|Total Switching Loss<br>Pe|—<br>Pe|37<br>Pe|—<br>Pe|mJ<br>Pe|| |LE<br>a<br>a|Internal Emitter Inductance<br>a<br>a<br>|—<br>a<br>a<br>|13<br>a<br>a<br>ee<br>|—<br>a<br>a<br>ee<br>|nH<br>a|Measured 5mm from package<br>a| |Cies<br>a<br>a|Input Capacitance<br>a<br>|—<br>a<br>|3600<br>a<br>ee<br>|—<br>a<br>ee<br>|pF|VGE= 0V<br>VCC= 30V<br>See Fig. 7<br>ƒ = 1.0MHz| |Coes<br>aee|Output Capacitance<br>ee|—<br>ee|160<br>ee<br>ee|—<br>ee<br>ee||| |Cres|Reverse Transfer Capacitance|—|30|—||| **Notes:** Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. ( See fig. 13b ) VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 5.0Ω, (See fig. 13a) Pulse width ≤ 80µs; duty factor ≤ 0.1%. Pulse width 5.0µs, single shot. Repetitive rating; pulse width limited by maximum junction temperature. www.irf.com 2 ## IRG4PH50SPbF **==> picture [436 x 488] intentionally omitted <==** **----- Start of picture text -----**<br> For both: Triangular wave:<br>Duty cycle: 50%<br>60 ee ee T = 125°CJ Lo<br>T = 90°Csink<br>oP Gate drive as specified 1<br>Power Dissipation = 40W Clamp voltage:<br>80% of rated<br>40 PNTNe Tyite |<br>Square wave:<br>60% of rated<br> voltage<br>20<br>TL |<br>0 , Ideal diodes tron A<br>0.1 1 10<br>f, Frequency (kHz)<br>Fig. 1 - Typical Load Current vs. Frequency<br> (Load Current = IRMS of fundamental)<br> 1000 1000<br>T = 25 CJ °<br>Py per Ft tt tt ft ty | ee<br> 100 100<br>pit e T = 150 CJ e ° | I Lt T = 150 CJ ° ert<br>LA a y DA LE LE<br>rT | | AF | | | | fT |] FL VIA | | ty td td<br> 10 10 T = 25 CJ °<br>PVE L e<br>a) eee PEE<br>V = 15VGE V = 50VCC<br> 1 THe 80µs PULSE WIDTH | 1 PEE ERR 5µs PULSE WIDTH EE<br>0.0 1.0 2.0 3.0 4.0 5.0 5 6 7 8 9 10 11 12<br>V , Collector-to-Emitter Voltage (V)CE V , Gate-to-Emitter Voltage (V)GE<br>Load Current (A)<br>I , Collector-to-Emitter Current (A)C I , Collector-to-Emitter Current (A)C<br>**----- End of picture text -----**<br> **Fig. 2** - Typical Output Characteristics **Fig. 3** - Typical Transfer Characteristics www.irf.com 3 ## IRG4PH50SPbF **==> picture [429 x 478] intentionally omitted <==** **----- Start of picture text -----**<br> 60 2.5<br>V = 15VGEGE<br>80 us PULSE WIDTH<br>50 PANE EEE epee ELE ET ET<br>aiaeNEee ee FLERE Et I = ACC 66<br>40 2.0 | [[|e]]<br>a<br>30 a nl nl<br>I = ACC 33<br>20 HEREPE te Et EE RNAT 1.5 LEE Eeaa<br>10 oRPPP iN BRTEETEE PEEE I = ACC 16.5<br>0 HEEPity eT tT tT rT TTENLN 1.0 CEE LET<br>25 50 75 100 125 150 -60 -40 -20 0 20 40 60 80 100 120 140<br>T , Case Temperature ( C)C ° T , Junction Temperature ( C)JJ °<br>Fig. 4 - Maximum Collector Current vs. Case Fig. 5 - Typical Collector-to-Emitter Voltage<br>Temperature vs. Junction Temperature<br> 1<br>P 0.50 eS er— —<br>A 0.20 t<br>0.1 l l<br>0.10<br>0.05<br>eeeBee ese aeeee<br>0.02<br>e 0.01 SINGLE PULSE e PDM<br>(THERMAL RESPONSE)<br>0.01 e l enC Ill t1<br>t2<br>a ee a ee ee<br>Notes:<br>1. Duty factor D = t / t1 2<br>et 2. Peak TJ = PDM x Z thJC + TC<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1<br>t , Rectangular Pulse Duration (sec)1<br>Maximum DC Collector Current(A) CE<br>V , Collector-to-Emitter Voltage(V)<br>thJC<br>Thermal Response (Z )<br>**----- End of picture text -----**<br> **==> picture [203 x 196] intentionally omitted <==** **----- Start of picture text -----**<br> 2.5<br>V = 15VGEGE<br>80 us PULSE WIDTH<br>epee ELE ET ET<br>I = ACC 66<br>FLERE Et |<br>2.0 | [[|e]]<br>a nl nl<br>I = ACC 33<br>1.5 LEE Eeaa |<br>BRTEETEE PEEE I = ACC 16.5<br>CEE LET<br>1.0<br>-60 -40 -20 0 20 40 60 80 100 120 140 160<br>T , Junction Temperature ( C)JJ °<br>CE<br>V , Collector-to-Emitter Voltage(V)<br>**----- End of picture text -----**<br> **Fig. 6** - Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 4 ## IRG4PH50SPbF **==> picture [438 x 512] intentionally omitted <==** **----- Start of picture text -----**<br> TR Rectifier<br>7000 20<br>VGE = 0V, f = 1MHz VCC = 400V<br>Cies = Cge + Cgc , C SHORTEDce I C = 33A<br>6000 Cres = Cgc<br>Cies Coes = Cce + Cgc<br>=| L ae<br>15<br>5000 Ps a a||||<br>4000 a eer OUD<br>Coes 10<br>P SS 8<br>3000<br>2000 Cres<br>P ONS 5 Ro<br>NNN 7<br>1000<br>S S FAR<br>PS Atti yy<br>0 0<br> 1 10 100 0 25 50 75 100 125 150 175<br>V , Collector-to-Emitter Voltage (V)CE Q , Total Gate Charge (nC)G<br>Fig. 7 - Typical Capacitance vs. Fig. 8 - Typical Gate Charge vs.<br>Collector-to-Emitter Voltage Gate-to-Emitter Voltage<br>25.0 1000<br>V = 960VCC R =GG hmΩΩ<br>V = 15VT = 25 CJGE ° V = 15VV = 960VGECCV = 960VGECCGECCCC<br>I = 33AC<br>24.0 tty 8 8 ee ee ee<br>I = ACC 66<br> 100<br>I = ACC 33<br>23.0<br>I = ACC 16.5<br>a 10 rT e T<br>22.0<br>[Ey] [dT] PEEP<br>21.0 1<br>0 pL [PT] 10 20 30 40 50 -60 Oe -40 ee -20 0 EPP 20 40 60 ee TE TE 80 100 120 140 160<br>( Ω )ce (Ohm) T , Junction Temperature ( C )JJ °<br>C, Capacitance (pF)<br>GE<br>V , Gate-to-Emitter Voltage (V)<br>Total Switching Losses (mJ) Total Switching Losses (mJ)<br>**----- End of picture text -----**<br> **==> picture [208 x 200] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>R =GG hmΩΩ<br>8 V = 15VV = 960VGECCV = 960VGECCGECCCC 8 ee ee ee<br>I = ACC 66<br> 100<br>I = ACC 33<br>I = ACC 16.5<br> 10 rT e T<br>PEEP<br> 1<br>-60 Oe -40 ee -20 0 EPP 20 40 60 ee TE TE 80 100 120 140 160<br>T , Junction Temperature ( C )JJ °<br>Total Switching Losses (mJ)<br>**----- End of picture text -----**<br> **Fig. 9** - Typical Switching Losses vs. Gate Resistance **Fig. 10** - Typical Switching Losses vs. Junction Temperature www.irf.com 5 ## IRG4PH50SPbF **==> picture [199 x 194] intentionally omitted <==** **----- Start of picture text -----**<br> 120<br>R =G ΩOhm<br>T = 150 CJ °<br>V = 960VCC<br>100<br>pee V = 15VGE TTTEERETrt<br>80 P EP<br>60<br>SSeSPITT Zee<br>40 yr<br>|<br>20<br>TPTELLLLLLD<br>0 PEE EPP Ey yy<br>0 10 20 30 40 50 60 70<br>I , Collector Current (A)C<br>Total Switching Losses (mJ)<br>**----- End of picture text -----**<br> **Fig. 11 -** Typical Switching Losses vs. Collector-to-Emitter Current **==> picture [206 x 194] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>V = 20VGE<br>T = 125 CJ o<br>||| ee Pteee<br> 100 aeell<br>WAmEOt||<br> 10 ANAA<br>BE)| | | ll<br>SHARA<br>SAFE OPERATING AREA<br>A<br> 1 Pe<br> 1 10 100 1000 10000<br>V , Collector-to-Emitter Voltage (V)CE<br>C<br>I , Collector Current (A)<br>**----- End of picture text -----**<br> **Fig. 12** - Reverse Bias SOA www.irf.com 6 ## IRG4PH50SPbF **==> picture [199 x 38] intentionally omitted <==** **----- Start of picture text -----**<br> L D.U.T.<br>V *<br>C<br>50V<br>1000V<br>**----- End of picture text -----**<br> **==> picture [23 x 12] intentionally omitted <==** **----- Start of picture text -----**<br> 480µF<br>960V<br>**----- End of picture text -----**<br> - **Driver same type as D.U.T.; Vc = 80% of Vce(max)** - **Note: Due to the 50V power supply, pulse width and inductor will increase to obtain rated Id.** **==> picture [256 x 65] intentionally omitted <==** **----- Start of picture text -----**<br> IC<br>0 0 0 N<br>L<br>Driver* D.U.T.<br>VC<br>50V<br>1000V<br>7 (Ie) e)<br>**----- End of picture text -----**<br> www.irf.com 7 ## IRG4PH50SPbF ## **TO-247AC Package Outline (Dimensions are shown in milimeters (inches))** ## **TO-247AC Part Marking Information** Data and specifications subject to change without notice. **IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 07/2008 www.irf.com 8
Updated at February 9, 2023
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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