Image not available
Illustrative purposes only
IRG4PH40UDPBF
IGBT, 41 A, 2.43 V, 160 W, 1.2 kV, TO-247AC, 3 Pins
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single IGBTs
- No. of Pins: 3Pins
- Power Dissipation: 160W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-247AC
- Operating Temperature Max: 150°C
- Continuous Collector Current: 41A
- Collector Emitter Voltage Max: 1.2kV
- Collector Emitter Saturation Voltage: 2.43V
| Delivery and price | |
|---|---|
| Units per pack | 1 |
| Price | 5.12 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## **Features**
**==> picture [158 x 96] intentionally omitted <==**
**----- Start of picture text -----**<br>
C<br>Voces =<br>=<br>G VcE(on) typ.<br>E @Vee = 15V,<br>n-channel<br>**----- End of picture text -----**<br>
**==> picture [39 x 7] intentionally omitted <==**
**----- Start of picture text -----**<br>
TO-247AC<br>**----- End of picture text -----**<br>
**==> picture [430 x 70] intentionally omitted <==**
**----- Start of picture text -----**<br>
θ<br>[Ric | Junctionto-case-IGBT | | er<br>θ<br>[Ruc_ | Junction-to-Case-Diode | | tt ec<br>θ<br>[Res | Case-to-Sink, flat, greased surface —~<| — (| 024 |_|<br>θ<br>[Rua | Junction-to-Ambient, typical socket mount | =~ |_= —-_— | 40<br>wt | Weight | Cty) | go)<br>www.irf.com 1<br>**----- End of picture text -----**<br>
**==> picture [403 x 356] intentionally omitted <==**
**----- Start of picture text -----**<br>
|||||||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|[Veemces||||Parameter|| Min. | Typ.|Max.|Units||
|Δ|Δ|
|F|Vierjces!|Tu]||TempColl|e|ctorto-Emiterrature|Coeff.|Breakdownof|BreakdownVotage®Vottage|[1200|—|[0.43]—|||——|||VPCV|||Vcc=OV.ic=25Voe=OV,lo=1|0|mu|A|
|VcE(on)|Collector-to-Emitter|Saturation|Voltage|||—||2.43]3.1|||Ic|=|21A|Voce|=|
|||||—|[2.47]|—|||Ic|=|21A,|Ty=|150°C|
|Δ|Δ|
|F VoecVect|n|yl|_|GateTul|TemperatureThresholdCoeffVoltageof|Threshold|Votage|||3.0—|||-11—|||60—|||mVPC|||V|co|e=V|ce,lo=25oeIo=25|0|HN|A|
|fae|[Forward|Transconductance|©|||16|||24{—]||S||Vce=100V,6=21A|
|feVem|Ices|Zero|Ree|Gate|Voltage|eee|Collector|Current||Se—|||—||250]ooo)"yA|We eov.vesevaon|y=|
|ve|pDiod|e|ForwardsteVoltage|Drop||}[pater]—|[26/33]|V||[eseanereIc=8.0A|See|
|Switching|Characteristics|@|Ty|=|25°C|(unless|otherwise|specified)|
|||||Parameter|||Min.|Typ.| Max.|| units||Conditions|
|[Q,|||Total|Gate|Charge|(turn-on)|||—|||86|||130|||lo=|21A|
|Fage|||Gate-|Emitter|Charge|(turn-on)|||—|||13]|20|||nc|| Vcc=400V|See|Fig.|8|
|Oy.|||Gate|-Collector|Charge|(turn-on)|||—|||29]|44)|| Voe=|15V|
|tun«i[Tum-OnDelayTime|[RiseTimeSSS~S]|||—|||48]|—|||‘||T=|250|
|Ω|
|[taom|||85|||—|||ns ||Ig = 2A, Voc = BOOV|
|It|||Turn-Off|DelayTime|||—|||97|||150|||Vo = 15V, Re = 10|
|[Eon|[FallTime|||=|||240|||360|||Energy losses include|"tail"|
|[Eo|||Turn-On|Switching|Loss||—|[1.80]|—|||diode reverse recovery.|
|[Es|||Turn-Off|Switching|Loss|||—|[1.93]|—|||mi ||See|Fig.|9,|10, 18|
|[tan||Total|Switching|Loss|——=SS=*;C|«(8.73|8|||
|SSS~S~SC|
|fe|S«*dRise[Turn-OnTimD|e|layTime|——~—S«d||—|||42|||—||||=|180°C,|SeeFig.|11,18|
|tayo|||82 | —|||ns|||Ie = 21, Voc = 800V|Ω|
**----- End of picture text -----**<br>
www.irf.com
2
**==> picture [435 x 493] intentionally omitted <==**
**----- Start of picture text -----**<br>
25<br>For both:<br>Duty cycle: 50%<br>20 Seee l T = 125°CJ<br>T = 90°Csink<br>Gate drive as specified<br>ene a Power Dissipation = W<br>15<br>Square wave:<br>60% of rated<br> voltage<br>10<br>i , ™~=<br>I<br>[o p en TI LINE<br>5<br>Ideal diodes<br>a<br>0<br>0.1 1 10 100<br>f, Frequency (KHz)<br>Fig. 1 - Typical Load Current vs. Frequency<br>(Load Current = Ipms of fundamental)<br> 100<br>eeepfanes 100 aSae<br>OA SS aa<br>CY “a<br>Po ee T = 150 CJ en o<br>a T = 150 CJ o AAs|||i<br> 10<br>ee All 10 AVY Vili<br>= 2 a ee ee e/a T = 25 C J o<br>—_z, T = 25 CJ o eae=H eyHAFE<br>P77 ah AAW<br>V = 15VGE<br>20μs PULSE WIDTH V = 50VCC<br> 1 5μs PULSE WIDTH<br> 1 JE} 10 O 1 P<br>5 6 7 8 9 10<br>V , Collector-to-Emitter Voltage (V)CE<br>V , Gate-to-Emitter Voltage (V)GE<br>LOAD CURRENT (A)<br>C<br>I , Collector-to-Emitter Current (A) C<br>I , Collector-to-Emitter Current (A)<br>**----- End of picture text -----**<br>
www.irf.com
3
**==> picture [435 x 479] intentionally omitted <==**
**----- Start of picture text -----**<br>
50 4.0<br>V = 15VGE<br>80 us PULSE WIDTH I = A C 42<br>Pit Tt TE TT fp<br>40<br>itt i tt Lert<br>BNE 3.0 [|<br>30<br>stiff Pear TE I = A C 21<br>PT ET NEE ET TL ATSte 0nnnnss==- EPP ty :<br>TTT PNT eee<br>20 I = AC 10.5<br>eee »~ 2.0 Pe<br>10 PTPTTETTTTTeeNeTTTLIE KTNI PEEPEEEEE<br>0 PE ET ETT TN 1.0 PEE EEE<br>25 50 75 100 125 150 -60 -40 -20 0 20 40 60 80 100 120 140 160<br>T , Case Temperature ( C)C ° T , Junction Temperature ( C)J °<br>Fig. 4 - Maximum Collector Current vs. Case Fig. 5 - Typical Collector-to-Emitter Voltage<br>Temperature vs. Junction Temperature<br> 1 PE<br>Soe D = 0.50 ot el ee aa — a<br>ne| eee a ee nl<br>0.1 e 0.20 0.10 <1 eee aeatl ee| ell<br>a A<br>PDM<br>0.05<br>cone aTT t1<br>0.02 SINGLE PULSE t2<br>eee 0.01 (THERMAL RESPONSE) CC EH<br>Notes:<br>1. Duty factor D = t / t1 2<br>0.01 T P HSTATI AME OU EE T 2. Peak TJ= PDM x Z thJC + TC<br>0.00001 0.0001 0.001 0.01 0.1 1<br>t , Rectangular Pulse Duration (sec)1<br>Maximum DC Collector Current(A) CE<br>V , Collector-to-Emitter Voltage(V)<br>thJC<br>Thermal Response (Z )<br>**----- End of picture text -----**<br>
www.irf.com
4
**==> picture [437 x 481] intentionally omitted <==**
**----- Start of picture text -----**<br>
4000 VGE = 0V, f = 1MHz 20 VCC = 400V<br>Cies = Cge + Cgc , C SHORTEDce I C = 21A<br>C res = C gc<br>| || Coes = Cce + Cgc 16 | tet<br>TT Seeeee<br>3000<br>SOOT) HERB<br>12<br>Cies<br>COS Wena Fees<br>2000<br>8<br>PNET Gane ae<br>| Coes llSr piAttite |<br>1000<br>4<br>C res<br>a | ee<br>0 TT hoTR 0 vi}AEE | ttEEREtt yt<br> 1 10 100 0 20 40 60 80 100<br>V , Collector-to-Emitter Voltage (V)CE Q , Total Gate Charge (nC)G<br>Fig. 7 - Typical Capacitance vs. Fig. 8 - Typical Gate Charge vs.<br>Collector-to-Emitter Voltage Gate-to-Emitter Voltage<br>5.0 100<br>V = 800VCC R =G Ω m<br>V = 15V T = 25 C JGE ° V V = 800VGECC = 15V<br>I = 21AC<br>Py| | fy aaaa EEEeeeeeeOn6608 e ee e TS<br>4.5<br>TTT BOEOe eeee I = AC 42<br>TT) TTP Re<br>4.0 pitt ee 10<br>I C = A21<br>|| [b+ | fou a be oe be ee<br>I = AC 10.5<br>3.5 aa a naaaaaa BSOSOeeeeO ee >eonOeMages2 ee<br>TT Be Bee on ee ERE Ac |<br>TTT) TTT Teter<br>3.0 Pett tt 1 ser EL<br>0 10 20 30 40 50 -60 -40 -20 0 20 40 60 80 100 120 140 160<br> Ω ) (Ohm) T , Junction Temperature ( C )J °<br>C, Capacitance (pF)<br>GE<br>V , Gate-to-Emitter Voltage (V)<br>Total Switching Losses (mJ) Total Switching Losses (mJ)<br>**----- End of picture text -----**<br>
www.irf.com
5
**==> picture [193 x 188] intentionally omitted <==**
**----- Start of picture text -----**<br>
16<br>R G Ω m<br>T = 150 CJ °<br>V = 800V CC<br>12 PteTTY V = 15VGE 7] } a<br>8 oyY 2c<br>4 BEG<br>0 rT | aa rT | aa rT |<br>0 10 20 30 40 50<br>I , Collector-to-emitter Current (A)C<br>Total Switching Losses (mJ)<br>**----- End of picture text -----**<br>
**==> picture [203 x 191] intentionally omitted <==**
**----- Start of picture text -----**<br>
1000<br>V = 20VGE<br>T = 125 CJ o<br>||ETa|||<br> 100 E00)VY<br>a A ||||<br> 10<br>llnl al<br>wimeaitost! amet eae<br>RAE | eee SAFE OPERATING AREA | | |<br> 1 |<br> 1 10 100 1000 10000<br>V , Collector-to-Emitter Voltage (V)CE<br>C<br>I , Collector-to-Emitter Current (A)<br>**----- End of picture text -----**<br>
**==> picture [174 x 285] intentionally omitted <==**
**----- Start of picture text -----**<br>
100 oe oe<br>re ee ee ee) ee<br>eepit tT eeTAee A<br>--- fe<br>+A<br>LAL<br>10 Sp<br>aE /= T = 150°CJ Pp<br>| | | | ft [|]<br>y= T = 125°CJ | |<br>ae fe im T = 25°CJ |+<br>1<br>0 2 4 6 8 10<br> Forward Voltage Drop - V (V)FM<br>F<br>Instantaneous Forward Current - I (A)<br>**----- End of picture text -----**<br>
www.irf.com
6
**==> picture [435 x 513] intentionally omitted <==**
**----- Start of picture text -----**<br>
200 oT 100 ————<br>V = 200VR V = 200VR<br>PT T = 125°C J 1. T = 125°CJ ee=e<br>T = 25°CJ T = 25°CJ<br>Lt so ee e eeeeeseee<br>160<br>I = 16AF<br>120 I = 16AF<br>oaS s I = 8.0AF TT pe I = 8.0AF Se x<br>10<br>I = 4.0AF<br>I = 4.0AF<br>80<br>LL aaa<br>ee Zameen<br>40 TSS<br>0 1<br>100 1000 100 1000<br>di /dt - (A/μs)f di /dt - (A/μs)f<br>Fig. 14 - Typical Reverse Recovery vs. di;/dt Fig. 15 - Typical Recovery Current vs. di;/dt<br>600 1000<br>V = 200VR<br>| T = 125°C J an eee rs<br>T = 25°CJ<br>500 | a ee<br>=}o- al ene Ze<br>I = 4.0A F<br>400 pe MBEAs | MEE ff nal|<br>I = 16AF I = 8.0AF<br>I = 16AF<br>300 100<br>I = 8.0AF<br>pe hee bebo CZ ae eee<br>oe é 4<br>200 I = 4.0AF<br>=, <Vann es<br>eae Fr<br>100 eee pS V = 200VR 7<br>T = 125°C J<br>T = 25°CJ<br>TP PLL}<br>0 a ee 10 [TL<br>100 1000 100 1000<br>di /dt - (A/μs)f di /dt - (A/μs)f<br>t - (ns)rr I - (A)IRRM<br>RR<br>Q - (nC)<br>di(rec)M/dt - (A/μs)<br>**----- End of picture text -----**<br>
www.irf.com
7
**==> picture [146 x 70] intentionally omitted <==**
**----- Start of picture text -----**<br>
Same type<br>device as<br>D.U.T.<br>80% 430μF<br>of Vce D.U.T.<br>**----- End of picture text -----**<br>
**==> picture [184 x 163] intentionally omitted <==**
**----- Start of picture text -----**<br>
GATE VOLTAGE D.U.T.<br>10% +Vg<br>+Vg<br>DUT VOLTAGE<br>Vce<br>AND CURRENT<br>Vcc [10% Ic] 90% Ic Ipk<br>Ic<br>5% Vce<br>td(on) tr<br>t2<br>Eon =<br>t1<br>t1 t2<br>**----- End of picture text -----**<br>
**==> picture [186 x 194] intentionally omitted <==**
**----- Start of picture text -----**<br>
90% Vge<br>+Vge<br>Vce<br>90% Ic<br>10% Vce<br>Ic<br>Ic<br>5% Ic<br>td(off) tf<br>t1+5μS<br>Eoff =<br>t1<br>t1 t2<br>**----- End of picture text -----**<br>
**==> picture [177 x 190] intentionally omitted <==**
**----- Start of picture text -----**<br>
trr<br>trr<br>Qrr =<br>Ic<br>tx<br>tx<br>10% Irr<br>10% Vcc<br>Vcc<br>Vpk<br>Irr<br>DIODE RECOVERY<br>WAVEFORMS<br>t4<br>Erec =<br>t3<br>DIODE REVERSE<br>RECOVERY ENERGY<br>t3 t4<br>∫<br>**----- End of picture text -----**<br>
www.irf.com
8
**==> picture [190 x 176] intentionally omitted <==**
**----- Start of picture text -----**<br>
Vg GATE SIGNAL<br>DEVICE UNDER TEST<br>CURRENT D.U.T.<br>VOLTAGE IN D.U.T.<br>CURRENT IN D1<br>t0 t1 t2<br>**----- End of picture text -----**<br>
`Figure 18e.`
**==> picture [204 x 51] intentionally omitted <==**
**----- Start of picture text -----**<br>
L D.U.T.<br>1000V V *c<br>50V<br>6000μF<br> 100V<br>**----- End of picture text -----**<br>
`Figure 19.`
`Figure 20.`
www.irf.com
9
## Notes `:`
- Repetitive rating: VGE=20V; pulse width limited by maximum junction tem-
- perature (figure 20)
- VCC=80%(VCES), VGE=20V, L=10μH, RG= 10 Ω (figure 19)
- Pulse width ≤ 80μs; duty factor ≤ 0.1%.
- Pulse width 5.0μs, single shot.
**==> picture [371 x 96] intentionally omitted <==**
**----- Start of picture text -----**<br>
EXAMPLE: THIS IS AN IRFPE30<br>WITH ASSEMBLY PART NUMBER<br>LOT CODE 5657 INTERNATIONAL poe<br>ASSEMBLED ON WW 35, 2000 RECTIFIER IRFPE30<br>IN THE ASSEMBLY LINE "H" Note: position indicates "Lead-Free" "P" in assembly line ASSEMBLYLOGO _| IgR 56 57 035H | | DATE CODEYEAR 0 = 2000<br>LOT CODE WEEK 35<br>LINE H<br>Data and specifications subject to change without notice.<br>**----- End of picture text -----**<br>
**IR WORLD HEADQUARTERS:** 10N.Sepulveda Blvd, El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 05/2011
www.irf.com
10
Updated at February 9, 2023
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
About Novapart
Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.
Learn more →Stock Shortage Specialist
When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
Request a quote →Compliant Alternatives
We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
BOM Analysis service →