IRG4PC50WPBF

IGBT, 55 A, 2.3 V, 200 W, 600 V, TO-247AC, 3 Pins

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Manufacturer: INFINEON
Product type: Single IGBTs
No. of Pins: 3Pins
Power Dissipation: 200W
Transistor Mounting: Through Hole
Transistor Case Style: TO-247AC
Operating Temperature Max: 150°C
Continuous Collector Current: 55A
Collector Emitter Voltage Max: 600V
Collector Emitter Saturation Voltage: 2.3V

Delivery and price
Units per pack	250
Price	3.01 €
Current stock	10+
Lead time	30 days

Datasheet

## PD - 94858 

## IRG4PC50WPbF 

INSULATED GATE BIPOLAR TRANSISTOR **Features** 

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C<br>Vces =<br>G VcE(on) max. =<br>E @Vce = 15V,<br>n-channel<br>=<br>TO-247AC<br>**----- End of picture text -----**<br>


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θ<br>Ric | vdunetion-to-Case<br>θ<br>Ros CSC<br>θ<br>Rus | Case-to-Sink, Flat, Greased Surface =|~~ S*d CC<br>0)<br>we | Wentunetion-o-Ambient, typical socket mount [| 40 |<br>www.irf.com 1<br>**----- End of picture text -----**<br>


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∆ ∆<br>Paces [err cotestr Seaton vote © 18 {| V [Vass te=tak<br>| — [1.93 | 23 | Ic =27A Vor<br>i<br>[Voce |— [1am] — | lc = 27A ,  Ty = 150°C<br>∆ ∆<br>F Vee) Tu[Gate| TemperatureThresholdCoeffVottageof Threshold Votage|[|30— || -11— || 0—||mVPC) Voe=Vec.lo= Oma<br>=<br>foe | Forward Transconductance® Sf a7 | 1 | — | S | Voz 100Vle=27A<br>| — | 20 | Vo = OV, Voce = 10V, Ty =<br>Se fpremwmercocwer Ee a [hare<br>[es | GaletoEnitier Leakage Current [= ==] [— |st00/ nA [Voc=s20v<br>Switching Characteristics @ Ty = 25°C (unless otherwise specified)<br>|_| Parameter | Min, [Typ. IMax.| Units] Conditions<br>[Qg | Total Gate Charge (turn-on) | — | 180 | 270 | lo = 27A<br>Oye | Gate = Collector Charge turn-on) [— | 63 [95| | Voe= tv<br>taeIi |Turn-OnDelayTime SST | 2<br>[tao S |  RiseTimeTurn-Off DelayTime | | —  || 83120 |  —180 | | Ty =Ic = 2 7A,5°C Voc = 480V<br>——SSS™S~S~S Ω<br>hid[Eon  Faitime — 87 [86 |_| Voce = 15V, R= 50<br>[Ear | Tu rmm- O ffn Switchin gg L L oss _——~« | | — [0. 0832 |  —— | _|mJ | EnSe e rgyFig. losses9, 10, include14  "ta<br>ese<br>sey | Tur-On belay Time f= fat f= ie 0<br>te [RiseTime | — | 483 | — | Io = 27A, Voc = 480V<br>Ω<br>**----- End of picture text -----**<br>


≤ ≤ Ω 

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International<br>100<br>For both: Triangular wave:<br>Duty cycle: 50%<br>T   = 125°CJ<br>80 a T        = 90°Csink<br>ET ee Gate drive as specified r e<br>Power Dissipation = 40W Clamp voltage:<br>80% of rated<br>LI 60 M OU i Sl<br>< Square wave: mean PPM TP<br>60% of rated<br>        voltage<br>e 40 o TL EUTING<br>Oo TATE El<br>P 20 e —<br>‘ Ideal diodes TETAS TTI<br>0 poll JUL | nel illI to<br>0.1 gy LUTE 1 10 LTT 100 SU 1000<br>f, Frequency (kHz)<br>**----- End of picture text -----**<br>


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 1000  1000<br>oo PEEP<br> 100  100<br>pe tit T  = 150  CJ ° eT |<br>Se =e Po A<br>T  = 150  CJ °<br>p T  = 25  CJ ° f T A T  = 25  CJ ° A<br> 10 7/ Jf | tt2  10 54 4 ZGnGEeeee<br>>iee ee ee eee eeeeee eee eee<br>V      = 15VGE V      = 50VCC<br> 1  1 P| 20µs PULSE WIDTH ne  10  1 5 FAT]e 6 | 7 8 i 5µs PULSE WIDTH9 10 11<br>V     , Collector-to-Emitter Voltage (V)CE V     , Gate-to-Emitter Voltage (V)GE<br>C C<br>I   ,  Collector-to-Emitter Current (A) I   ,  Collector-to-Emitter Current (A)<br>**----- End of picture text -----**<br>


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60 3.0<br>V      = 15VGE<br>Pp ptt 80 us PULSE WIDTH<br>Ea tT | Tf]<br>50<br>PieNEeeee<br>tT | APTEy<br>40<br>I   =       AC 54<br>sooo LL L<br>| PINTTT<br>Pt [tt] EE<br>30 Pott tT TE TINE 2.0 Co I   =       AC 27<br>ae COPP ER<br>20<br>I   =       AC 13.5<br>PEPINa TODD Daanp h<br>10 Pte tT tT tT tT | et ee +<br>Hefit | restttl]TT |<br>0 1.0<br>25 50 75 100 125 150 -60 -40 -20 0 20 40 60 80 100 120 140 160<br>T   , Case Temperature (  C)C ° T   , Junction Temperature (  C)J °<br>Fig. 4 - Maximum Collector Current vs. Case Fig. 5 - Typical Collector-to-Emitter Voltage<br>Temperature vs. Junction Temperature<br> 1<br>0.50<br>. Sor<br>0.20 0<br>0.1<br>ae 0.100.05  = S58ee<br>oi 0.02 sess ee eee<br>e 0.01 e d SINGLE PULSE  e e ee PDM<br>(THERMAL RESPONSE)<br>0.01 e T t1<br>t2<br>a ee ee ee Notes:<br>1. Duty factor D = t   / t1 2<br>Err FF 2. Peak TJ = PDM x  Z thJC + TC<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1  1<br>t  , Rectangular Pulse Duration (sec)1<br>CE<br>Maximum DC Collector Current(A) V     , Collector-to-Emitter Voltage(V)<br>thJC<br>Thermal Response (Z        )<br>**----- End of picture text -----**<br>


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8000 VGE = 0V, f = 1MHz 20 VCCCC = 400V<br>Cies = Cge + Cgc , C      SHORTEDce I C = 27A<br>Cres = Cgc<br>| || Coes = Cce + Cgc 16 | tet<br>TT Sennen<br>6000<br>‘<br>ONS00t) Cies ET 12 e e<br>a a pitttiti | | |<br>4000 lll TTA<br>8<br>EN a | Wa<br>2000 NS Coes ll 4+=+= +<br>4<br>P S Cres ST epee<br>0 P S SEEL] 0 Anns<br> 1  10  100 0 40 80 120 160 200<br>V     , Collector-to-Emitter Voltage (V)CE Q   , Total Gate Charge (nC)GG<br>Fig. 7 - Typical Capacitance vs. Fig. 8 - Typical Gate Charge vs.<br>Collector-to-Emitter Voltage Gate-to-Emitter Voltage<br>3.0  10<br>V      = 480VCC R      = G Ω<br>V      = 15VT      = 25    CJGE ° TET) yy PE V      = 15VV      = 480VGECC OeeeoeEeeeoeeeLEeee<br>I       = 27AC<br>I   =       AC 54<br>Tidy ate a De OO nO nO RSE<br>2.0<br>I   =       AC 27<br>Ey 4  1 TL ELLPeery<br>LAA eee<br>I   =       AC 13.5<br>x4 SePOECECE Se oe Oe ee ee ebE be e t> pa ee ee<br>1.0<br>PLT] ||}PEiy E LEracnenn| an<br>pa yd ao ee<br>0.0 het Ey 0.1 ERTwa LEE<br>0 10 20 30 40 50 -60 -40 -20 0 20 40 60 80 100 120 140 160<br>R Ω )hm) T  , Junction Temperature (  C )J °<br>C, Capacitance (pF)<br>GE<br>V     , Gate-to-Emitter Voltage (V)<br>Total Switching Losses (mJ) Total Switching Losses (mJ)<br>**----- End of picture text -----**<br>


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20<br>VCCCC = 400V<br>I C = 27A<br>| tet<br>16<br>Sennen<br>12 e e<br>pitttiti | | |<br>TTA<br>8<br>4+=+= Wa +<br>4<br>epee<br>Anns<br>0<br>0 40 80 120 160 200<br>Q   , Total Gate Charge (nC)GG<br>GE<br>V     , Gate-to-Emitter Voltage (V)<br>**----- End of picture text -----**<br>


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3.0  1000<br>R      = T      = 150  CGJ Ω° V      = 20VT      = 125  CGEJ o<br>V      = 480VCC<br>V      = 15VGE<br>snenysun Searels eens<br>2.0  100<br>TTT VA All<br>i|  TLL|lyaa ATLL| || | feeey|<br>1.0  10<br>we PAB |<br>TLL ELL (antes<br>SAFE OPERATING AREA<br>0.0 iiiiii  1 p|eaeeetl lel<br>0 10 20 30 40 50 60  1  10  100  1000<br>I    , Collector-to-emitter Current (A)C V     , Collector-to-Emitter Voltage (V)CE<br>Total Switching Losses (mJ)<br>C<br>I   ,  Collector-to-Emitter Current (A)<br>**----- End of picture text -----**<br>


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L D.U.T.<br>V  *<br>C<br>50V | 1000V 0. 480V 480µF<br>960V<br>**----- End of picture text -----**<br>


- **Driver same type as D.U.T.; Vc = 80% of Vce(max)** 

- **Note: Due to the 50V power supply, pulse width and inductor will increase to obtain rated Id.** 

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IC<br>000 N<br>L<br>Driver* D.U.T.<br>VC<br>50V<br>1000V<br>T (IE) Ch<br>o<br>(©)<br>J \<br>90%<br>10%<br>eeee<br>VC<br>90%<br>ee (Toy td(off) :<br>IC 5%10%<br>tr tf<br>t d(on) t=5µs<br>Eon Eoff<br>E   = (E    +E    )ts        on      off<br>**----- End of picture text -----**<br>


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3.65 (.143) - D -<br>15.90 (.626) 3.55 (.140) 5.30 (.209)<br>15.30 (.602) 0.25 (.010) M D B M 4.70 (.185)<br>= - B - - A - _ 2.50 (.089)<br>1.50 (.059)<br>5.50 (.217) 4<br>20.30 (.800) | fpAeet-¢ 0 ee tpm5<br>19.70 (.775) 2X 5.50 (.217) NOTES:<br>4.50 (.177) 1  DIMENSIONING & TOLERANCING<br>    PER ANSI Y14.5M, 1982.<br>ar 1 2 3 : 2  CONTROLLING DIMENSION : INCH.<br>3  CONFORMS TO JEDEC OUTLINE<br>- C -      TO-247-AC.<br>14.80 (.583)<br>4.30 (.170)<br>14.20 (.559) 3.70 (.145)<br>LEAD ASSIGNMENTS<br>|| Hexfet IGBT<br>2.40 (.094)2.00 (.079) 3X 1.40 (.056)1.00 (.039) 3X [0.80 (.031)] 0.40 (.016) 1 - Gate2 - Drain LEAD 1 - GATE ASSIG NMENTS 1 - Gate2 - Collector<br>co 5.45 (.215)2X t 3.40 (.133)0.25 (.010) M C A S || 2.60 (.102)2.20 (.087) — 3 - Source4 - Drain2 - DRAIN3 - SOURCE4 - DRAIN3 - Emitter4 - Collector<br>2X 3.00 (.118)<br>**----- End of picture text -----**<br>


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EXAMPLE: THIS IS AN IRFPE30<br>WITH ASSEMBLY  PART NUMBER<br>LOT CODE 5657 INTERNATIONAL<br>ASSEMBLED ON WW 35, 2000 RECTIFIER IRFPE30<br>IN THE ASSEMBLY LINE "H" Note:   "P" in assembly line LOGO | IgR 56           57 035H DATE CODE<br>position indicates "Lead-Free" ASSEMBLY YEAR 0 =  2000<br>LOT CODE WEEK 35<br>LINE H<br>**----- End of picture text -----**<br>


Data and specifications subject to change without notice. International 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 

TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 11/03 

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Note:  For the most current drawings please refer to the IR website at: http://www.irf.com/package/

Updated at February 9, 2023

Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.

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