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IRG4PC50UDPBF
IGBT, 55 A, 2 V, 200 W, 600 V, TO-247AC, 3 Pins
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- Manufacturer: INFINEON
- Product type: Single IGBTs
- No. of Pins: 3Pins
- Product Range: IRG4
- Power Dissipation: 200W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-247AC
- Operating Temperature Max: 150°C
- Continuous Collector Current: 55A
- Collector Emitter Voltage Max: 600V
- Collector Emitter Saturation Voltage: 2V
| Delivery and price | |
|---|---|
| Units per pack | 250 |
| Price | 6.32 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
PD -95185
## IRG4PC50UDPbF
## UltraFast CoPack IGBT
## INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE **Features**
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C<br>VCES = 600V<br>V = 1.65V<br>CE(on) typ.<br>G<br>@VGE = 15V, IC = 27A<br>E<br>n-channel<br>**----- End of picture text -----**<br>
- UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode
- Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3
- IGBT co-packaged with HEXFRED[TM] ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations
- Industry standard TO-247AC package
- Lead-Free
## **Benefits**
- Generation 4 IGBT's offer highest efficiencies available
- IGBT's optimized for specific application conditions
- HEXFRED diodes optimized for performance with IGBT's . Minimized recovery characteristics require less/no snubbing
- Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBT's
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TO-247AC<br>**----- End of picture text -----**<br>
## **Absolute Maximum Ratings**
|~~OO~~|**Parameter**<br>~~es~~<br>~~OO~~|**Max.**<br>~~es~~<br>|**Units**<br>|
|---|---|---|---|
|VCES<br>~~OO~~<br>~~ll~~|Collector-to-Emitter Voltage<br>~~OOosha~~<br>~~ll~~|600<br>~~osha~~<br>|V<br>~~osha~~<br>|
|IC@ TC= 25°C<br>~~OO~~<br>~~ll~~|Continuous Collector Current<br>~~OO~~<br>~~llOe~~|55<br><br>~~Oe~~|A<br><br>~~Oe~~|
|IC@ TC= 100°C<br>~~ll~~<br>~~a~~|Continuous Collector Current<br>~~llOe~~|27<br>~~Oe~~<br>~~C~~||
|ICM<br>~~ll~~<br>~~a~~<br>~~a~~|Pulsed Collector Current<br>~~ll~~<br>~~a~~|220<br><br>~~a~~<br>~~C~~||
|ILM<br>~~a~~|Clamped Inductive Load Current<br>~~C~~|220<br>~~C~~<br>~~C~~||
|IF@ TC= 100°C<br>~~OOO~~<br>~~sh~~|Diode Continuous Forward Current<br>~~OOO~~<br>~~sh~~<br>~~so~~|25<br>~~OOO~~<br>~~so~~<br>~~_—]_—~~||
|IFM<br>~~sh~~|Diode Maximum Forward Current<br>~~sh~~<br>~~so~~|220<br>~~so~~<br>~~_—]_—~~||
|VGE<br>~~sh~~<br>~~a~~|Gate-to-Emitter Voltage<br>~~sh~~<br>~~so~~<br>~~TT~~<br>~~1.,_{(722-22WNMH~~|± 20<br>~~so~~<br>~~_—]_—~~<br>~~1.,_{(722-22WNMH~~|V|
|PD@ TC= 25°C<br>~~sh~~<br>~~LLL~~|Maximum Power Dissipation<br>~~sh~~<br>~~TT~~<br>~~1.,_{(722-22WNMH~~<br>~~LLL~~|200<br>~~sh~~<br>~~1.,_{(722-22WNMH~~<br>~~LLL~~|W<br>~~LLL~~|
|PD@ TC= 100°C<br>~~LLL~~<br>~~pf~~|Maximum Power Dissipation<br>~~TT~~<br>~~1.,_{(722-22WNMH~~<br>~~LLL~~<br>~~pf~~|78<br>~~1.,_{(722-22WNMH~~<br>~~LLL~~||
|TJ<br>TSTG<br>~~pf~~<br>~~sh~~|Operating Junction and<br>Storage Temperature Range<br>~~pf~~<br>~~sh~~<br>~~so~~|-55 to +150<br>~~so~~<br>~~_—]_—~~|°C|
|~~pf~~<br>~~sh~~<br>~~-——-,7~~|SolderingTemperature,for 10 sec.<br>~~pf~~<br>~~sh~~<br>~~so~~<br>~~-——-,7~~|300(0.063 in.(1.6mm)from case)<br>~~so~~<br>~~_—]_—~~<br>~~-——-,7 NN~~||
|~~pf~~<br>~~sh~~<br>~~-——-,7~~|MountingTorque,6-32 or M3 Screw.<br>~~pf~~<br>~~sh~~<br>~~so~~<br>~~-——-,7~~|10 lbf•in(1.1 N•m)<br>~~so~~<br>~~_—]_—~~<br>~~-——-,7 NN~~||
## **Thermal Resistance**
||**Parameter**|**Min.**|**Typ.**|**Max.**|**Units**|
|---|---|---|---|---|---|
|RθJC|Junction-to-Case - IGBT|------|------|0.64|°C/W|
|RθJC|Junction-to-Case - Diode|------|------|0.83||
|RθCS|Case-to-Sink, flat,greased surface|------|0.24|------||
|RθJA|Junction-to-Ambient, typical socket mount|-----|-----|40||
|Wt|Weight|------|6(0.21)|------|g (oz)|
04/23/04
## IRG4PC50UDPbF
## **Electrical Characteristics @ TJ = 25°C (unless otherwise specified)**
|**Parameter**<br>~~|~~<br>~~a~~<br>~~a~~|**Parameter**<br>|**Min. **<br>~~P|~~<br><br>~~QD~~|**Typ. **<br>~~P||~~<br><br>~~QD~~|**Max. **<br>~~|fT~~<br><br>~~GO~~|**Units**<br>~~fT~~<br><br>~~QO~~|**Conditions**<br><br>~~QO~~|
|---|---|---|---|---|---|---|
|V(BR)CES<br>~~|~~<br>~~a~~<br>~~a~~|Collector-to-Emitter Breakdown Voltage<br>~~ec~~<br>~~Gn~~|600<br>~~P|~~<br>~~ec~~<br>~~QD~~<br>~~n~~|----<br>~~P||~~<br>~~ec~~<br>~~QD~~<br>~~nD~~|----<br>~~|fT~~<br>~~ec~~<br>~~GO~~<br>~~QO~~|V<br>~~fT~~<br>~~ec~~<br>~~QO~~<br>~~QO~~|VGE= 0V, IC= 250µA<br>~~ec~~<br>~~QO~~<br>~~QO~~|
|∆V(BR)CES/∆TJ<br>~~a~~|J Temperature Coeff. of Breakdown Voltage<br>~~Gn~~|----<br>~~QD~~<br>~~n~~|0.60<br>~~QD~~<br>~~nD~~|----<br>~~GO ~~<br>~~QO~~|V/°C<br> ~~QO~~<br>~~QO~~|VGE= 0V, IC= 1.0mA<br>~~QO~~<br>~~QO~~|
|VCE(on)<br>|<br>|<br>~~ee~~<br>~~a~~|Collector-to-Emitter Saturation Voltage<br>~~Gn~~<br>|<br>~~ee~~|----<br>~~n~~<br>~~**PT**~~|1.65<br>~~nD~~<br>~~**PT**~~|2.0<br>~~QO~~<br>~~**PT**~~|V<br>~~QO~~|IC= 27A<br>VGE= 15V<br>IC= 55A<br>See Fig. 2, 5<br>IC= 27A, TJ= 150°C<br>~~QO~~|
|||----<br>~~**PT**~~|2.0<br>~~**PT**~~|----<br>~~**PT**~~|||
|||----<br>~~PT~~|1.6<br>~~PT~~|----<br>~~PT~~|||
|VGE(th)<br>~~ee~~<br>~~a~~|Gate Threshold Voltage<br>~~ee~~|3.0<br>~~PT~~|----<br>~~PT~~|6.0<br>~~PT~~||VCE= VGE, IC= 250µA|
|∆VGE(th)/∆TJ<br>~~ee ~~<br>~~a~~|J Temperature Coeff. of Threshold Voltage<br> ~~ee~~<br>~~GO~~|e ----<br>~~PT~~<br>~~GO~~|-13<br>~~PT~~|----<br>~~PT~~|mV/°C|VCE= VGE, IC= 250µA|
|gfe<br>~~a~~|Forward Transconductance<br>|16<br>|24<br>|----<br>|S<br>|VCE= 100V, IC= 27A<br>|
|ICES<br>~~SE~~|Zero Gate Voltage Collector Current<br>~~SE~~|----<br>~~SE~~|----<br>~~SE~~|250<br>~~SE~~|µA<br>~~SE~~|VGE= 0V, VCE= 600V<br>~~SE~~|
|||----<br>~~SE~~<br>~~PT~~|----<br>~~SE~~<br>~~PT~~|6500<br>~~SE~~<br>~~PT~~||VGE= 0V,VCE= 600V,TJ= 150°C<br>~~SE~~|
|VFM<br>~~a~~<br>~~P|~~|Diode Forward Voltage Drop<br>~~a~~|----<br>~~a~~|1.3<br>~~a~~|1.7<br>~~a~~|V<br>~~a~~|IC= 25A<br>See Fig. 13<br>IC= 25A,TJ= 150°C<br>~~a~~|
|||----<br>~~a~~<br>~~PT~~<br>|1.2<br>~~a~~<br>~~PT~~<br>~~ft~~|1.5<br>~~a~~<br>~~PT~~<br>~~ft~~|||
|IGES<br>~~P|~~|Gate-to-Emitter Leakage Current|----<br>~~PT~~<br>~~Ff~~|----<br>~~PT~~<br>~~Ffft~~|±100<br>~~PT~~<br>~~ft~~|nA|VGE= ±20V|
## **Switching Characteristics @ TJ = 25°C (unless otherwise specified)**
|~~Qg~~<br>Qge<br>~~a ee~~<br>~~ee~~|~~Total Gate Charge (turn-on)~~<br>Gate-Emitter Charge (turn-on)<br>~~ee~~|----<br>~~ee~~<br>~~ee~~|~~180~~<br>25<br>~~ee e~~|~~270~~<br>38<br>~~e~~|nC<br>~~ee~~|~~IC = 27A~~<br>VCC =400V<br>See Fig. 8|~~IC = 27A~~<br>VCC =400V<br>See Fig. 8|
|---|---|---|---|---|---|---|---|
|Qge<br>Qgc<br>~~ee~~|Emitter Charge (turnon)<br>Gate-Collector Charge (turn-on)|----<br>~~ee~~|61<br>~~ee e~~|90<br>~~e~~|ns<br>~~ee~~|See Fig. 8<br>VGE= 15V<br>TJ= 25°C<br>IC =27A, VCC =480V||
|gc<br>td(on)<br>~~ee~~<br>~~a~~<br>~~ee~~|Collector Charge (turnon)<br>Turn-On Delay Time|----<br>~~ee ~~|46<br> ~~ee e~~|----<br>~~e~~||||
|d(on)<br>tr<br>~~ee~~|On Delay Time<br>Rise Time|----|25|----||||
|td(off)<br>~~ee~~<br>~~a~~<br>~~ee~~|Turn-Off Delay Time|----|140|230|mJ|VGE= 15V, RG= 5.0Ω<br>Energy losses include "tail" and<br>diode reverse recovery.<br>See Fig. 9, 10, 11, 18<br>TJ= 150°C, See Fig. 9, 10, 11, 18<br>IC =27A, VCC =480V<br>|<br>|||
|d(off)<br>tf<br>~~ee~~<br>~~a~~|Off Delay Time<br>Fall Time|----|74|110||||
|Eon<br>~~ee~~<br>~~a~~<br>~~ee~~|Turn-On Switching Loss|----|0.99|----||||
|Eoff<br>~~a~~<br>~~ee~~<br>~~a~~|On Switching Loss<br>Turn-Off Switching Loss|----|0.59|----||||
|Ets<br>~~ee~~<br>~~a~~<br>~~ee~~|Off Switching Loss<br>Total Switching Loss|----|1.58|1.9|ns|||
|td(on)<br>~~a~~<br>~~ee~~|Total Switching Loss<br>Turn-On Delay Time|----|44|----||||
|d(on)<br>tr<br>~~ee~~<br>~~a~~<br>~~ee~~|On Delay Time<br>Rise Time|----|27|----||||
|td(off)<br>~~ee~~|Turn-Off Delay Time|----|240|----|mJ<br>nH<br>~~eG~~|VGE= 15V, RG= 5.0Ω<br>Energy losses include "tail" and<br>diode reverse recovery.<br>Measured 5mm from package<br>VGE =0V||
|d(off)<br>tf<br>~~ee~~<br>~~ee~~|Off Delay Time<br>Fall Time|----|130|----||||
|Ets<br>~~ee~~|Total Switching Loss|----|2.3|----||||
|LE<br>~~ee~~<br>~~a~~<br>~~ee~~|Total Switching Loss<br>Internal Emitter Inductance<br>~~eG~~|----<br>~~eG~~|13<br>~~eG~~|----<br>~~eG~~||||
|Cies<br>~~ee~~|Input Capacitance<br>~~eG~~|----<br>~~eG~~|4000<br>~~eG~~|----<br>~~eG~~|~~eG~~|||
|Coes<br>~~ee~~<br>~~a~~<br>~~ee~~|Input Capacitance<br>Output Capacitance<br>~~eG~~|----<br>~~eG~~|250<br>~~eG~~|----<br>~~eG~~|pF<br>~~eG~~|VCC =30V<br>See Fig. 7||
|Cres<br>~~ee~~|Output Capacitance<br>Reverse Transfer Capacitance|----|52|----|pF<br>ns<br>~~cee~~|See Fig. 7<br>ƒ = 1.0MHz<br>TJ= 25°C See Fig.<br>TJ =125°C 14 IF =25A||
|trr<br>~~ee~~<br>~~a~~<br>~~ee~~|Reverse Transfer Capacitance<br>Diode Reverse Recovery Time|----|50|75||||
|~~ee~~<br>~~a~~|Diode Reverse Recovery Time<br>~~ee~~|----<br>~~cee~~|105<br>~~cee~~|160<br>~~cee~~||||
|Irr<br>~~ee~~<br>~~a~~<br>~~ft~~|Diode Peak Reverse Recovery Current<br>~~ee~~<br>~~ft~~|----<br>~~cee~~|4.5<br>~~cee~~|10<br>~~cee~~|A<br>~~cee~~<br>~~LE~~|TJ =25°CSee Fig.<br>TJ =125°C 15<br>~~LE~~|C 15VR= 200V<br>C 16di/dt 200A/µs<br>|<br>||
|||----<br>~~cee~~<br>~~Pt~~|8.0<br>~~cee~~<br>~~Pt~~|15<br>~~cee~~<br>~~Pt~~<br>~~LE~~||||
|Qrr<br>~~a~~<br>~~ft~~<br>~~of~~|Diode Reverse Recovery Charge<br>~~ee ~~<br>~~ft~~<br>~~of~~|----<br> ~~cee~~|112<br>~~cee~~|375<br>~~cee~~<br>~~LE~~|nC<br>~~cee~~<br>~~LE~~<br>~~LE~~|TJ =25°CSee Fig.<br>TJ =125°C 16<br>~~LE~~<br>~~LE~~||
|||----<br>~~Pt~~|420<br>~~Pt~~|1200<br>~~LE~~<br>~~Pt~~<br>~~LE~~||||
|di(rec)M/dt<br>~~ft~~<br>~~of~~|Diode Peak Rate of Fall of Recovery<br>During tb<br>~~ft~~<br>~~of~~<br>~~|~~|----<br>~~|~~<br>~~|~~|250|----<br>~~LE~~<br>~~LE~~|A/µs<br>~~LE~~<br>~~LE~~|TJ =25°C<br>TJ =125°C<br>~~LE~~<br>~~LE~~||
|||----<br>~~|~~<br>~~|~~|160|----<br>~~LE~~||||
|~~of~~<br>~~ef~~|During t<br>~~of~~<br>~~|~~<br>~~ef~~|~~|~~<br>~~|~~<br>~~ef~~|~~ef~~|~~LE~~<br>~~ef~~|~~LE~~<br>~~ef~~|~~LE~~||
|||~~ef~~<br>~~Ff~~|~~ef~~|~~ef~~||||
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## IRG4PC50UDPbF
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40<br>Duty cycle: 50%<br>T = 1 25°CJ<br>T = 90°Csink<br>Gate drive as specified<br>30 Turn-on losses include<br>effects of reverse recovery<br>Power Dissipation = 40W<br>20100 s= h. 60% of rated voltage TIE TIETTA ELTTIMONGHIT!waTTCo<br>0.1 1 10 100<br>f, Frequency (kHz)<br>Load Current (A)<br>**----- End of picture text -----**<br>
## **Fig. 1** - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental)
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1000<br>ee<br>100 a 2<br>A<br>Re<br>T = 1 5 0 °CJ<br>10 Pee) SlAe<br>ae T = 2 5 °CJ<br>1<br>po ff<br>V = 1 5 VG E<br>0.1 ee 2 0 µ s P UL S E W ID TH<br>0 1 10<br>V , Collector-to-Em itter Voltage (V)C E<br>I , Collector-to-Emitter Current (A)C<br>**----- End of picture text -----**<br>
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1000<br>es es<br>po<br>100<br>——_——<br>ee — — ——<br>T = 150°CJ<br>$$ e 4 Af}e——_|ee<br>T = 25°CJ<br>10 74) eee<br>Se———————<br>V = 10VCC<br>1 Toy 5µs PULSE W IDTH A<br>4 6 8 10 12<br>V , G ate-to-E m itter Voltage (V)GE<br>I , Collector-to-Em itter Current (A)C<br>**----- End of picture text -----**<br>
**Fig. 2** - Typical Output Characteristics
**Fig. 3** - Typical Transfer Characteristics
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## IRG4PC50UDPbF
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60<br>P T V = 15V G E 2.5 V = 15VGE<br> 80µs PULSE W IDTH<br>50<br>Nm<br>I = 54AC<br>40 P PoEIMA oE TRNETp ft 2.0 Tet iiljt<br>30 PN sat<br>I = 27AC<br>20 eee Nees 1.5 aa UU Onn gu anna<br>pif pt fj | NJ JU T I = 14AC<br>10<br>pot KR aT<br>Pot PhP cPhrPNN [rPrEN] treet<br>PtTN<br>0<br>1.0<br>25 50 75 100 125 150 -60 -40 -20 0 20 40 60 80 100 120 140 160<br>T , Case Temperature (°C)C T , Junction Tem perature (°C)J<br>Fig. 4 - Maximum Collector Current vs. Case<br>Fig. 5 - Typical Collector-to-Emitter Voltage<br>Temperature<br>vs. Junction Temperature<br>1 ee oe eeeC<br>ee ee ee ee eS te ee<br>aa ee ee ee eee el<br>ee ee __ ee<br>D = 0.5 0<br>e e en te eel<br>0.2 0 en ye eecag eee<br>0.1<br>0.1 0<br>H Pe hEe pe PD M<br>0 .0 5 t<br>1<br>— 0.02 | et S IN G L E P U LS E(T H E R M A L R E S P O N S E ) t 2<br>rA r OO N otes:<br>0.01 1 . D uty factor D = t / t 1 2<br>ca ra l 2. P eak T = P x Z + T J D M thJC C<br>0.01<br>0.00001 0.0001 0.001 0.01 0.1 1 10<br>t , Rectangular P ulse Dura tion (sec)1<br>Maximum DC Collector Current (A)<br>CE<br>V , Collector-to-Em itter Voltage (V)<br>thJC<br>The rm al Respo nse (Z )<br>**----- End of picture text -----**<br>
**Fig. 6** - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case
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## IRG4PC50UDPbF
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8000 V = 0V , f = 1M HzG E 20 V = 400VC E<br>C = C + C , C SHO RTEDies ge gc ce I = 27AC<br>C = C<br>res gc<br>C = C + Coes ce gc 16<br>te ee S e<br>6000<br>KL Pt ft<br>C ie s<br>12<br>a ll Seen<br>4000 a ee nanan<br>C oes 8<br>OO || Ht tA to<br>2000 C res NIESTNCo) 4 HRSTTT<br>A<br>0 PR UT A 0 AREER<br>0 40 80 120 160 200<br>1 10 100<br>V , C ollector-to-E m itter Voltage (V )CE Q , Total Gate Charge (nC)g<br>Fig. 7 - Typical Capacitance vs. Fig. 8 - Typical Gate Charge vs.<br>Collector-to-Emitter Voltage Gate-to-Emitter Voltage<br>3.0 10<br> V = 4 8 0VC C<br> V = 1 5 VG E<br> T = 2 5 °CJ SER PEPE EESSE I = 54AC<br> I = 27 AC<br>2.5 AL Ee<br>Py rer tps<br>TA A e I = 27AC er<br>2.0 1<br>I = 14AC<br>1.5 Pa) y Pe}Perep ery ry |<br> R = 5.0G Ω<br> V = 15VG E<br>1.0 P P fF PEE Pp A 0.1 PEPE V = 480VC C TEEPE PPP EEE<br>0 10 20 30 40 50 60 -60 -40 -20 0 20 40 60 80 100 120 140 160<br>R , G ate R e sista nce (G Ω ) T , Junction Temperature (°C)J<br>C, Capacitance (pF)<br>GE<br>V , Gate-to-Emitter Voltage (V)<br>Total Switching Losses (m J) Total Switching Losses (mJ)<br>**----- End of picture text -----**<br>
**Fig. 9** - Typical Switching Losses vs. Gate Resistance
**Fig. 10** - Typical Switching Losses vs. Junction Temperature
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## IRG4PC50UDPbF
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8.0 1000<br> R = 5 .0G Ω V = 20VG EGE<br> T = 15 0 °CJ T = 125°CJ<br> V = 4 8 0 VC C<br> V = 1 5 VG E<br>6.0<br>100 SA FE O PERATING AREA<br>Ve Fh ae<br>4.0<br>asa oe antl at<br>10<br>2.0 Py AR OA<br>a fd<br>0.0 See A 1 PACEI CE<br>0 10 20 30 40 50 60 1 10 100 1000<br>I , C ollector-to-Em itte r C urrent (A)C V , Collector-to-Emitter Voltage (V)C E<br>Total Switching Losses (m J)<br>C<br>I , Collector-to-Emitter Current (A)<br>**----- End of picture text -----**<br>
**Fig. 11 -** Typical Switching Losses vs. Collector-to-Emitter Current
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Fig. 12 - Turn-Off SOA<br>**----- End of picture text -----**<br>
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100<br>Senae an<br>Pit tT EY Ane|<br>face Geen<br>T = 150°CJ<br>SaRa/AGREe/)<br>T = 125°CJ<br>10 T = 25°CJ<br>A<br>HAR<br>| Weft | ft<br>P|oyVFL Geetf<br>Ay +<br>HEL<br>1<br>0.6 1.0 1.4 1.8 2.2 2.6<br> Forward V oltage D ro p - V (V )FM<br>F<br>Instantane ous Forward C urren t - I (A )<br>**----- End of picture text -----**<br>
**Fig. 13** - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
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## IRG4PC50UDPbF
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140 100<br>120 V = 200VT = 125°CT = 25°CRJJ es V = 200VT = 125°CT = 25°CRJJ<br>100<br>I = 50AF<br>I = 25AF<br>80 SS I = 50AF 10 e e<br>I F = 25A SEcaalh g t<br>SL fA I = 10AF<br>I = 10AF<br>60<br>enn S00 en e e<br>Sr ( A<br>40<br>ee NE eee eel<br>FT<br>20 a CT | tt ee 1<br>100 1000 100 1000<br>di /dt - (A/µs)f di /dt - (A/µs)f<br>t - (ns)rr I - (A)IRRM<br>**----- End of picture text -----**<br>
**Fig. 14** - Typical Reverse Recovery vs. dif/dt
**Fig. 15** - Typical Recovery Current vs. dif/dt
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1500 10000<br>V = 2 00VR V = 2 00VR<br>T = 12 5°CJ T = 12 5°CJ<br>Pe T = 25 °CJ [EERE T = 25 °CJ<br>1200 as tt nnn LIoat<br>900<br>I = 50AF I = 10AF<br>1000<br>600<br>I = 25AF<br>oe NS 4 OBE)<br>wy TE<br>I = 25AF<br>300<br>SSE | [OL]<br>SEs LEE ||)<br>I = 10AF I = 50AF<br>0 —— 100 ee<br>100 1000 100 1000<br>di /dt - (A /µs)f di /dt - (A/µs)f<br>RR<br>Q - (nC )<br>di(rec)M/dt - (A/µs)<br>**----- End of picture text -----**<br>
**Fig. 16** - Typical Stored Charge vs. dif/dt
**Fig. 17** - Typical di(rec)M/dt vs. dif/dt
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## IRG4PC50UDPbF
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Same type<br>device as<br>D.U.T.<br>80% 430µF<br>of Vce D.U.T.<br>d s<br>**----- End of picture text -----**<br>
**Fig. 18a** - Test Circuit for Measurement of ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf
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90% Vge<br>+Vge<br>Vce<br>90% Ic<br>10% Vce<br>Ic<br>Ic<br>5% Ic<br>td(off) tf<br>t1+5µ S<br>Eoff = Vce ic dt<br>t1<br>t1 t2<br>∫<br>**----- End of picture text -----**<br>
**Fig. 18b** - Test Waveforms for Circuit of Fig. 18a, Defining Eoff, td(off), tf
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G ATE VO LTA G E D .U .T.<br>10% +Vg<br>+Vg<br>D UT VO LTAG E<br>Vce<br>AN D CU RRE NT<br>10% Ic<br>Vcc 90% Ic Ipk<br>Ic<br>5% Vce<br>td(on) tr<br>t2<br>E on = Vce ie dt<br>t1<br>t1 t2<br>∫<br>**----- End of picture text -----**<br>
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trr<br>trr<br>Q rr = id dt<br>Ic<br>tx<br>tx<br>10% Irr<br>10% Vcc<br>Vcc<br>V pk<br>Irr<br>DIO DE RE CO V ERY<br>W AVEFO RM S<br>t4<br>Erec = Vd id dt<br>t3<br>DIO DE REVE RSE<br>REC O VERY ENER G Y<br>t3 t4<br>∫<br>∫<br>**----- End of picture text -----**<br>
**Fig. 18c** - Test Waveforms for Circuit of Fig. 18a, Defining Eon, td(on), tr
**Fig. 18d** - Test Waveforms for Circuit of Fig. 18a, Defining Erec, trr, Qrr, Irr
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## IRG4PC50UDPbF
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Vg G ATE SIG NAL<br>DEVICE U NDE R TEST<br>CUR REN T D .U .T.<br>VO LTAG E IN D.U.T.<br>CUR REN T IN D1<br>t0 t1 t2<br>**----- End of picture text -----**<br>
Figure 18e. Macro Waveforms for Figure 18a's Test Circuit
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1000VL V *c D.U.T. 0 - 480V RL= 4 X I480VC @25°C<br>50V<br>6000µ F<br> 100 V<br>**----- End of picture text -----**<br>
Figure 19. Clamped Inductive Load Test Circuit
Figure 20. Pulsed Collector Current Test Circuit
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## IRG4PC50UDPbF
## Notes:
Repetitive rating: VGE = 20V; pulse width limited by maximum junction temperature (figure 20)
VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 5.0 Ω (figure 19)
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
Pulse width 5.0µs, single shot.
## TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
## TO-247AC Part Marking Information
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EXAMPLE: THIS IS AN IRFPE30<br>WITH ASSEMBLY PART NUMBER<br>LOT CODE 5657 INTERNATIONAL<br>ASSEMBLED ON WW 35, 2000 RECTIFIER IRFPE30<br>LOGO 035H<br>IN THE ASSEMBLY LINE "H"<br>56 57<br>DATE CODE<br>Note: "P" in assembly line<br>position indicates "Lead-Free" ASSEMBLY YEAR 0 = 2000<br>LOT CODE WEEK 35<br>LINE H<br>**----- End of picture text -----**<br>
Data and specifications subject to change without notice.
**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 04/04
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Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/
Updated at February 9, 2023
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