IRG4PC50FPBF

IGBT, 70 A, 1.79 V, 200 W, 600 V, TO-247AC, 3 Pins

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Manufacturer: INFINEON
Product type: Single IGBTs
No. of Pins: 3Pins
Product Range: IRG4
Power Dissipation: 200W
Transistor Mounting: Through Hole
Transistor Case Style: TO-247AC
Operating Temperature Max: 150°C
Continuous Collector Current: 70A
Collector Emitter Voltage Max: 600V
Collector Emitter Saturation Voltage: 1.79V

Delivery and price
Units per pack	500
Price	1.97 €
Current stock	10+
Lead time	30 days

Datasheet

## PD - 95398 

## INSULATED GATE BIPOLAR TRANSISTOR 

## **Features** 

## IRG4PC50FPbF Fast Speed IGBT 

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TO-247AC<br>**----- End of picture text -----**<br>


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IRG4PC50FPbF<br>TeR Rectitier<br>Electrical Characteristics @ Ty = 25°C (unless otherwise specified)<br>Parameter Min. |Typ.|Max.|Units| Conditions |<br>∆ ∆<br>ececs_| Eri otc preston Vote @ [18 {=| -V [Vastu = tok<br>| — [1.45] 1.6 | Io = 39A Voe = 15V<br>Se<br>[Voz |— [153 | — | lc =39A , Ty = 150°C<br>∆ ∆<br>F Veet) Tu[Gate| TemperatureTrveshoddCoeff.Votegeof Threshold_——=«iVottage | 30— |[14 — |[—60 ||mVFC| Vee =Vee,lo=250H8<br>=<br>fe | Forward Transconductance © «fai | 30 |— | S | Voz 100V,lc=30A<br>— | 20 | Vo = OV, Voce = 10V, Ty = 25°C<br>n—-<br>== poor<br>| —2 =<br>Switching Characteristics @ Ty = 25°C (unless otherwise specified)<br>| [Parameter | Min.| Typ. Max. units| Conditions<br>[Qg | Total Gate Charge (turn-on) | — | 190 | 290 | lo = 39A<br>[Oye | Gate = Collector Charge (turn-on) [— [68 [87 | | Voe=15V<br>[tao |Turn-OnDelayTime<br>—SSS~—<br>ft, *([RiseTime ——SSC«dT —|| otHT| — || gg | Tue DBCC<br>Ω<br>fe «id [Falitime—SSSC~SCSCS]<br>Loss___——~(|<br>Ex | Tumn-On Switching TOTO] —_—| Voce = 15V, Re = 5.0<br>Loss_—~+|<br>[Er[Ets | Turn-Off Switching —— |037|—21 |— ||__|mv | SeeFig.Energy losses 10,11, include13, 14 "ti<br>sen—__[Tun-oneeyinete | Total Switchingloss f=| = |fag2.47 |f=] 3.0 | iso<br>Ω<br>[tan [RiseTime | — | 24 | — | Io = 39A, Voc = 480V<br>**----- End of picture text -----**<br>


≤ ≤ Ω 

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## IRG4PC50FPbF 

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Ter Rectifier<br>100<br>For both: Triangular wave:<br>Duty cycle: 50%<br>80 a T   = 125°CJ<br>i = T        = 90°Csink e e ee poe<br>Gate drive as specified<br>Power Dissipation = 40W Clamp voltage:<br>80% of rated<br>60 Io t a |<br>Square wave:<br>60% of rated<br>4020 LT Cop 4          voltage e Ideal diodes LUMP| NTEeeeMN TTT] ELu h<br>iLAL i<br>0 _LAT ELA“PC CroH<br>0.1 1 10 100<br>f, Frequency (kHz)<br>Fig. 1 - Typical Load Current vs. Frequency<br>(For square wave, |=lRms of fundamental; for triangular wave, |=Ipx)<br>1000 1000<br>po See eee .28<br>100 100<br>all |jar<br>T  = 150°CJ<br>T  = 25°CJ<br>iY | i 4 7<br>T  = 150°CJ<br>10 10<br>p f A<br>T  = 25°CJ<br>V     = 15VGE V      = 50VCC<br>1 ce wion 1 Pi ft | tt tt<br>TIF sere PPE Fseusewon<br>0.1 1 10 5 6 7 8 9 10 11 12<br>V     , Collector-to-Emitter Voltage (V)CE V    , Gate-to-Emitter Voltage (V)GE<br>Load Current (A)<br>I   , Collector-to-Emitter Current (A)C I   , Collector-to-Emitter Current (A)C<br>**----- End of picture text -----**<br>


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## IRG4PC50FPbF 

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70<br>ee ee<br>60<br>SS S)<br>P| INET Tt yt<br>50 P| ft | ING Et<br>40 eae Ne ee<br>30 ee ee eee<br>P| et | tT TP EN<br>20 pot eK<br>10 eeee ee ee ee eee<br>ee ee ee ee<br>0 pp"<br>25 50 75 100 125 150<br>T   , Case Temperature (°C)C<br>Maximum DC Collector Current (A)<br>**----- End of picture text -----**<br>


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2.5 IV = 16V<br>fea<br>I    = 78AC<br>2.0 | et<br>LL T<br>-<br>I    = 39AC<br>1.5 ;<br>a =<br>TTT Ji Ly I    = 20AC j<br>1.0 LP<br>-60 -40 -20 0 20 40 60 80 100 120 140 160<br>T  , Junction Temperature (°C)J<br>CE<br>V     , Collector-to-Emitter Voltage (V)<br>**----- End of picture text -----**<br>


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1<br>py<br>a<br>acr<br>ee<br>pe} cl<br>D = 0.50<br>R or ae<br>0.20<br>0.1 ELE LEE<br>— [om] De eee ae ee ||<br>0.10<br>a esHeee ee ee eee eee eee PDM<br>PeAe,<br>0.05 t<br>1<br>A 0.02 a 2       SINGLE PULSE OTIC C| t2 _<br>(THERMAL RESPONSE)<br>0.01 1. Duty factor D =  t   / t 1 2<br>e y LE O d<br>0.01 ar aiilll UI |i bene se ee re,<br>0.00001 0.0001 0.001 0.01 0.1 1 10<br>t   , Rectangular Pulse Duration (sec)1<br>thJC<br>Thermal Response (Z       )<br>**----- End of picture text -----**<br>


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## IRG4PC50FPbF 

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8000 20<br>16<br>6000<br>s<br>12<br>ee eee<br>4000<br>a lll TT<br>8<br>EE es || pot fw|<br>2000 et El A<br>s 4<br>~ SN AR<br>eee Ft ttt<br>0 aKeee A 0 A<br>1 10 100 0 40 80 120 160 200<br>V    , Collector-to-Emitter Voltage (V)CE Q  , Total Gate Charge (nC)g<br>C, Capacitance (pF)<br>GE<br>V     , Gate-to-Emitter Voltage (V)<br>**----- End of picture text -----**<br>


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3.8 100<br> R      = 5.0G  Ω<br> V      = 15VGE<br>3.63.4 ql <a fT [| Pee  V      = 480VCC<br>10<br>3.2 TS R R I    = 78AC<br>ri ft | tT YE” | tt dt peei oe ee ee eeneeeeeeeee<br>I    = 39AC<br>3.0<br>Seo Ee e I    = 20AC<br>1<br>2.8<br>2.6<br>2.4 pep A 0.1 PE<br>0 10 20 30 40 50 60 -60 -40 -20 0 20 40 60 80 100 120 140 160<br>R   , Gate ResistanceG [( Ω ][)] T  , Junction Temperature (°C)J<br>Total Switching Losses (mJ) Total Switching Losses (mJ)<br>**----- End of picture text -----**<br>


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## IRG4PC50FPbF 

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12 1000<br>108 PO) nV = 480V. 1 100 eepee ees 1 ee eelPH<br>|<br>6<br>a Ati<br>4 po 10 FE<br>2<br>0 ee ee ee ee A 1 | ee il<br>0 20 40 60 80 1 10 100 1000<br>I   , Collector-to-Emitter Current (A)C V     , Collector-to-Emitter Voltage (V)CE<br>Total Switching Losses (mJ)<br>C<br>I   , Collector-to-Emitter Current (A)<br>**----- End of picture text -----**<br>


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## IRG4PC50FPbF 

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L D.U.T.<br>V  *<br>C<br>50V<br>| 1000V<br>(0)<br>* Driver same type as D.U.T.; Vc = 80% of Vce(max)<br>* Note: Due to the 50V power supply, pulse width and inductor<br>   will increase to obtain rated Id.<br>**----- End of picture text -----**<br>


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480µF<br>960V<br>**----- End of picture text -----**<br>


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IC<br>000 NN<br>L<br>Driver* D.U.T.<br>VC<br>50V<br>1000V<br>T (IE) Ci)<br>o<br>(©)<br>JV<br>90%<br>10%<br>VC<br>90%<br>eS See (ose td(off) 2<br>IC 5%10%<br>tr tf<br>t d(on) t=5µs<br>Eon Eoff<br>E   = (E    +E    )ts        on      off<br>**----- End of picture text -----**<br>


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## IRG4PC50FPbF 

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EXAMPLE: THIS IS AN IRFPE30<br>WITH ASSEMBLY  PART NUMBER<br>LOT CODE 5657 INTERNATIONAL ) © @<br>ASSEMBLED ON WW 35, 2000 RECTIFIER IRFPE30<br>IN THE ASSEMBLY LINE "H" Note:   "P" in assembly line LOGO . IQR 56           57 035H DATE CODE<br>position indicates "Lead-Free" ASSEMBLY YEAR 0 =  2000<br>LOT CODE WEEK 35<br>LINE H<br>**----- End of picture text -----**<br>


**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 

TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** _Data and specifications subject to change without notice._ 6/04 

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Note:  For the most current drawings please refer to the IR website at: http://www.irf.com/package/

Updated at February 9, 2023

Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.

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