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IRG4PC50FDPBF
IGBT, 70 A, 1.79 V, 200 W, 600 V, TO-247AC, 3 Pins
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- Manufacturer: INFINEON
- Product type: Single IGBTs
- No. of Pins: 3Pins
- Product Range: IRG4
- Power Dissipation: 200W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-247AC
- Operating Temperature Max: 150°C
- Continuous Collector Current: 70A
- Collector Emitter Voltage Max: 600V
- Collector Emitter Saturation Voltage: 1.79V
| Delivery and price | |
|---|---|
| Units per pack | 250 |
| Price | 4.98 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
PD -95225 ## IRG4PC50FDPbF ## INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE **Features** Fast CoPack IGBT - Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). **==> picture [190 x 96] intentionally omitted <==** **----- Start of picture text -----**<br> C<br>VCES = 600V<br>V = 1.45V<br>CE(on) typ.<br>G<br>@VGE = 15V, IC = 39A<br>E<br>n-channel<br>**----- End of picture text -----**<br> - Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 - IGBT co-packaged with HEXFRED[TM] ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations - Industry standard TO-247AC package - Lead-Free ## **Benefits** - Generation -4 IGBT's offer highest efficiencies available - IGBT's optimized for specific application conditions - HEXFRED diodes optimized for performance with IGBT's . Minimized recovery characteristics require less/no snubbing - Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBT's **==> picture [39 x 7] intentionally omitted <==** **----- Start of picture text -----**<br> TO-247AC<br>**----- End of picture text -----**<br> ## **Absolute Maximum Ratings** |~~ee~~|~~ts~~||| |---|---|---|---| |~~ee~~|**Parameter**<br>~~ts~~|**Max.**|**Units**| |VCES<br>~~ee~~<br>~~a~~<br>~~«S-cAN™$@™"—@—"@”~~|Collector-to-Emitter Voltage<br>~~ts~~<br>~~a~~<br>~~«S-cAN™$@™"—@—"@”~~<br>~~TtlrvOVT———~~|600<br>~~TtlrvOVT———~~|V<br>~~TtlrvOVT———~~| |IC@ TC= 25°C<br>~~«S-cAN™$@™"—@—"@”~~|Continuous Collector Current<br>~~«S-cAN™$@™"—@—"@”~~<br>~~TtlrvOVT———~~|70<br>~~TtlrvOVT———~~|A<br>~~TtlrvOVT———~~| |IC@ TC= 100°C<br>~~«S-cAN™$@™"—@—"@”~~<br>~~a~~<br>~~oo~~|Continuous Collector Current<br>~~«S-cAN™$@™"—@—"@”~~<br>~~TtlrvOVT———~~<br>~~a~~|39<br>~~TtlrvOVT———~~|| |ICM<br>~~a ~~<br>~~oo~~|Pulsed Collector Current<br> ~~a~~|280|| |ILM<br>~~oo~~<br>~~ooo~~|Clamped Inductive Load Current<br>~~ooo~~|280<br>~~ooo~~|| |IF@ TC= 100°C<br>~~ooo~~<br>~~a~~|Diode Continuous Forward Current<br>~~ooo~~<br>~~a~~<br>~~a~~|25<br>~~ooo~~|| |IFM<br>~~a~~<br>~~a~~|Diode Maximum Forward Current<br>~~a~~<br>~~a~~<br>~~a~~<br>~~a~~|280|| |VGE<br>~~a~~<br>~~a~~|Gate-to-Emitter Voltage<br>~~a~~<br>~~a~~<br>|± 20<br>|V<br>| |PD@ TC= 25°C<br>~~ass~~|Maximum Power Dissipation<br>~~ss~~|200<br>~~ss~~|W<br>~~ss~~| |PD@ TC= 100°C<br>~~ss~~<br>~~a~~|Maximum Power Dissipation<br>~~ss~~<br>~~a~~<br>~~a~~|78<br>~~ss~~|| |TJ<br>TSTG<br>~~a~~<br>~~«S-cAN™$@™"—@—"@”~~|Operating Junction and<br>Storage Temperature Range<br>~~aee~~<br>~~«S-cAN™$@™"—@—"@”~~<br>~~TtlrvOVT———~~|-55 to +150<br>~~ee~~<br>~~TtlrvOVT———~~|°C<br>~~ee~~<br>~~TtlrvOVT———~~| |~~«S-cAN™$@™"—@—"@”~~|SolderingTemperature,for 10 sec.<br>~~ee~~<br>~~«S-cAN™$@™"—@—"@”~~<br>~~TtlrvOVT———~~|300(0.063 in.(1.6mm)from case)<br>~~ee~~<br>~~TtlrvOVT———~~|| |~~«S-cAN™$@™"—@—"@”~~<br>~~a ~~|MountingTorque,6-32 or M3 Screw.<br>~~«S-cAN™$@™"—@—"@”~~<br>~~TtlrvOVT———~~<br> ~~a~~|10 lbf•in(1.1 N•m)<br>~~TtlrvOVT———~~|~~TtlrvOVT———~~| ## **Thermal Resistance** ||**Parameter**|**Min.**|**Typ.**|**Max.**|**Units**| |---|---|---|---|---|---| |RθJC|Junction-to-Case - IGBT|------|------|0.64|°C/W| |RθJC|Junction-to-Case - Diode|------|------|0.83|| |RθCS|Case-to-Sink,flat, greased surface|------|0.24|------|| |RθJA|Junction-to-Ambient,typical socket mount|-----|-----|40|| |Wt|Weight|------|6(0.21)|------|g (oz)| 04/29/04 ## IRG4PC50FDPbF ## **Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** |**Parameter**<br>**Min.**<br>**Typ. Max.**<br>**Units**<br> **Conditions**<br>V(BR)CES<br>Collector-to-Emitter Breakdown Voltage<br>600<br>----<br>----<br>V<br>VGE= 0V, IC= 250µA<br>∆V(BR)CES/∆TJ<br>Temperature Coeff. of Breakdown Voltage<br>----<br>0.62<br>----<br>V/°C<br>VGE= 0V, IC= 1.0mA<br>VCE(on)<br>Collector-to-Emitter Saturation Voltage<br>----<br>1.45<br>1.6<br>IC= 39A<br>VGE= 15V<br>----<br>1.79<br>----<br>V<br>IC= 70A<br>See Fig. 2, 5<br>----<br>1.53<br>----<br>IC= 39A, TJ= 150°C<br>VGE(th)<br>Gate Threshold Voltage<br>3.0<br>----<br>6.0<br>VCE= VGE, IC= 250µA<br>∆VGE(th)/∆TJ<br>Temperature Coeff. of Threshold Voltage<br>----<br>-14<br>----<br>mV/°C<br>VCE= VGE, IC= 250µA<br>gfe<br>Forward Transconductance<br>21<br>30<br>----<br>S<br>VCE= 100V, IC= 39A<br>ICES<br>Zero Gate Voltage Collector Current<br>----<br>----<br>250<br>µA<br>VGE= 0V, VCE= 600V<br>----<br>----<br>6500<br>VGE= 0V, VCE= 600V, TJ= 150°C<br>VFM<br>Diode Forward Voltage Drop<br>----<br>1.3<br>1.7<br>V<br>IC= 25A<br>See Fig. 13<br>----<br>1.2<br>1.5<br>IC= 25A,TJ= 150°C<br>IGES<br>Gate-to-Emitter Leakage Current<br>----<br>----<br>±100<br>nA<br>VGE= ±20V<br>~~a~~<br>~~rs ters te (es~~<br>~~Ps<Q~~<br>~~PsOQ~~<br>~~| |~~<br>~~|ft~~<br>~~|ft~~<br>~~PRRsOO~~<br>~~PsOO~~<br>~~EE~~<br>~~Yt~~<br>~~Rt~~<br>~~a~~<br>~~|ft~~<br>~~es~~| |---| |**Switching Characteristics @ TJ = 25°C (unless otherwise specified)**| |**Parameter**<br>**Min.**<br>**Typ. Max.**<br>**Units**<br> **Conditions**<br>Qg<br>Total Gate Charge(turn-on)<br>----<br>190<br>290<br>IC= 39A<br>Qge<br>Gate - Emitter Charge(turn-on)<br>----<br>28<br>42<br>nC<br>VCC= 400V<br>See Fig. 8<br>Qgc<br>Gate - Collector Charge(turn-on)<br>----<br>65<br>97<br>VGE= 15V<br>td(on)<br>Turn-On DelayTime<br>----<br>55<br>----<br>TJ= 25°C<br>tr<br>Rise Time<br>----<br>25<br>----<br>ns<br>IC= 39A, VCC= 480V<br>td(off)<br>Turn-Off DelayTime<br>----<br>240<br>360<br>VGE= 15V, RG= 5.0Ω<br>tf<br>Fall Time<br>----<br>140<br>210<br>Energy losses include "tail" and<br>Eon<br>Turn-On SwitchingLoss<br>----<br>1.5<br>----<br>diode reverse recovery.<br>Eoff<br>Turn-Off SwitchingLoss<br>----<br>2.4<br>----<br>mJ<br>See Fig. 9, 10, 11, 18<br>Ets<br>Total SwitchingLoss<br>----<br>3.9<br>5.0<br>td(on)<br>Turn-On DelayTime<br>----<br>59<br>----<br>TJ= 150°C, See Fig. 9, 10, 11, 18<br>tr<br>Rise Time<br>----<br>27<br>----<br>ns<br>IC= 39A, VCC= 480V<br>td(off)<br>Turn-Off DelayTime<br>----<br>400<br>----<br>VGE= 15V, RG= 5.0Ω<br>tf<br>Fall Time<br>----<br>260<br>----<br>Energy losses include "tail" and<br>Ets<br>Total SwitchingLoss<br>----<br>6.5<br>----<br>mJ<br>diode reverse recovery.<br>LE<br>Internal Emitter Inductance<br>----<br>13<br>----<br>nH<br>Measured 5mm frompackage<br>Cies<br>Input Capacitance<br>----<br>4100<br>----<br>VGE= 0V<br>Coes<br>Output Capacitance<br>----<br>250<br>----<br>pF<br>VCC= 30V<br>See Fig. 7<br>Cres<br>Reverse Transfer Capacitance<br>----<br>49<br>----<br>ƒ= 1.0MHz<br>trr<br>Diode Reverse Recovery Time<br>----<br>50<br>75<br>ns<br>TJ= 25°C See Fig.<br>----<br>105<br>160<br>TJ= 125°C 14 IF= 25A<br>Irr<br>Diode Peak Reverse Recovery Current<br>----<br>4.5<br>10<br>A<br>TJ= 25°C See Fig.<br>----<br>8.0<br>15<br>TJ= 125°C 15 VR= 200V<br>Qrr<br>Diode Reverse Recovery Charge<br>----<br>112<br>375<br>nC<br>TJ= 25°C See Fig.<br>----<br>420<br>1200<br>TJ= 125°C 16 di/dt 200A/µs<br>di(rec)M/dt<br>Diode Peak Rate of Fall of Recovery<br>----<br>250<br>----<br>A/µs<br>TJ= 25°C See Fig.<br>Duringtb<br>----<br>160<br>----<br>TJ= 125°C 17<br>~~a es~~<br>~~ee ee es~~<br>~~es~~<br>~~es~~<br>~~es~~<br>~~es~~<br>~~Ps~~<br>~~es~~<br>~~Ps~~<br>~~es~~<br>~~es~~<br>~~a~~<br>~~es~~<br>~~Ps~~<br>~~es~~<br>~~Ps~~<br>~~esee~~<br>~~Bser~~<br>~~es~~<br>~~es~~<br>~~Psff~~<br>~~Se~~<br>~~OL~~<br>~~Ff~~<br>~~EEE~~<br>~~ES~~<br>~~|~~<br>~~|~~<br>~~fe~~<br>~~Se~~<br>~~LL~~<br>~~| ft~~<br>~~fe~~<br>~~OL~~<br>~~Ft~~| www.irf.com 2 ## IRG4PC50FDPbF **==> picture [437 x 523] intentionally omitted <==** **----- Start of picture text -----**<br> 50<br>Duty cycle: 50%<br>T = 125°CJ<br>T = 90°Csink<br>40 ee l Gate drive as specified<br>Turn-on losses include<br>effects of reverse recovery<br>Pow er D iss ipation = 40W<br>30 IPUTTHE N<br>60% of rated<br> voltage<br>20<br>LANE EP LT<br>10<br>Oe TNEECAPTTT]<br>ee yy Bian A<br>0<br>0.1 1 10 100<br>f, Frequency (kHz)<br>Fig. 1 - Typical Load Current vs. Frequency<br> (Load Current = IRMS of fundamental)<br>1000 SSS Seat 1000 Pe<br>FP fe ta rey yf yey<br>100 a Tain 100 ft Lee<br>T = 150°CJ<br>T = 25°CJ<br>= T = 150°CJ Str ee oy 7 O e<br>10 10<br>T = 25°CJ<br>See e r e V e te e 4 r e<br>| eeeeeett| oo Geeon<br>V = 15VGE V = 50VCC<br>1 | pf 20µs PULSE W ID TH A 1 fteA| ft 5µs PULSE W IDTH ee A<br>0.1 1 10 5 6 7 8 9 10 11 12<br>V , Collector-to-Em itter Voltage (V)C E V , G ate-to-Em itter Voltage (V)GE<br>I , Collector-to-Em itter Current (A)C I , Collector-to-E m itter C urrent (A)C<br>Load Current ( A )<br>**----- End of picture text -----**<br> **Fig. 2** - Typical Output Characteristics **Fig. 3** - Typical Transfer Characteristics www.irf.com 3 ## IRG4PC50FDPbF **==> picture [442 x 513] intentionally omitted <==** **----- Start of picture text -----**<br> 70 2.5<br>V = 15V G E V = 15VGE<br> 80µs PU LSE W IDTH<br>60<br>a P N So LEE EL<br>50 I = 78AC<br>_| N_++— 2.0 PEELE E L<br>40<br>eee ne<br>30<br>I = 39AC<br>ptSEN E tfS 1.5 Lyei<br>20 oe oe ee fii tt<br>10 ee ee I = 20AC<br>0 e e e e ee 1.0 peaan LLELLEETTSt nna A<br>25 50 75 100 125 150 -60 -40 -20 0 20 40 60 80 100 120 140 160<br>T , Case Tem perature (°C)C T , Junction Tem perature (°C )J<br>Fig. 4 - Maximum Collector Current vs. Fig. 5 - Typical Collector-to-Emitter Voltage<br>Case Temperature vs. Junction Temperature<br>1<br>Ty)<br>SEE | LLL on<br>D = 0.50<br>ii iamass?"EC cemet<br>0.20 UI} aati<br>0.1 [oS] [ot]<br>eadtesan [i] Zs<br>0.10<br>PDM<br>0.05 t<br>1<br>m e t 2<br>0.02 SINGLE PULSE<br>(THERMAL RESPO NSE) N otes:<br>0.01 1. D uty factor D = t / t 1 2<br>S A i<br>2. P eak T = P x Z + T J D M thJC C<br>0.01 ee cillll 1 iii) TMTTE LL<br>0.00001 0.0001 0.001 0.01 0.1 1 10<br>t , R ectangular Pulse Duration (sec)1<br>Maximum DC Collector Current (A) CE<br>V , C ollector-to-Em itter Voltage (V)<br>thJC<br>Therm al Response (Z )<br>**----- End of picture text -----**<br> **Fig. 6** - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 4 ## IRG4PC50FDPbF **==> picture [207 x 200] intentionally omitted <==** **----- Start of picture text -----**<br> 8000 VGE = 0V f = 1 MHz<br> Cies = Cge + Cgc + Cce SHORTED<br> Cres = Cce<br> Coes = Cce + Cgc<br>co)<br>6000<br>C ies<br>4000<br>a lll<br>C oes<br>2000 SS SN ef<br>C res<br>0<br>1 PoE 10 100<br>V , Collector-to-Emitter Voltage (V)CE<br>C, Capacitance (pF)<br>**----- End of picture text -----**<br> **Fig. 7 -** Typical Capacitance vs. Collector-to-Emitter Voltage **==> picture [204 x 201] intentionally omitted <==** **----- Start of picture text -----**<br> 5.00<br> V = 480VCC<br> V = 15VGE<br> T = 25°CJ<br> I = 39AC<br>4.50<br>4.00<br>3.50<br>0 10 20 30 40 50 60<br>R , Gate Resistance (G Ω )<br>Total Switchig Losses (mJ)<br>**----- End of picture text -----**<br> **Fig. 9** - Typical Switching Losses vs. Gate Resistance **==> picture [199 x 200] intentionally omitted <==** **----- Start of picture text -----**<br> 20<br> V = 400VC E<br> I = 39AC<br>16 Eee<br>12<br>TT A<br>8<br>pf | ww |<br>4<br>0<br>O Z EE EE<br>0 40 80 120 160 200<br>Q , To tal G a te C ha rge (n C )g<br>G E<br>V , G ate-to-E m itter Voltage (V)<br>**----- End of picture text -----**<br> **Fig. 8** - Typical Gate Charge vs. Gate-to-Emitter Voltage **==> picture [202 x 198] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br> R = 5.0 G Ω<br> V = 15VGE Pp<br> V = 480VCC<br>Seen eeePPee ee eeeeee4<br>ae Oo been Ue DED I = 78AC<br>10 e y<br>Gana Geaeeene seaeeee= I = 39AC =a<br>Le y<br>I = 20AC<br>TTT yl ee<br>T e<br>1 srrtt<br>-60 -40 -20 0 20 40 60 80 100 120 140 160<br>T , Junction Temperature (°C)J<br>Total Switchig Losses (mJ)<br>**----- End of picture text -----**<br> **Fig. 10** - Typical Switching Losses vs. Junction Temperature www.irf.com 5 ## IRG4PC50FDPbF **==> picture [433 x 198] intentionally omitted <==** **----- Start of picture text -----**<br> 16 1000<br> R = 5.0 G Ω V = 20VG EG E<br> T = 150°CJ T = 125°CJ<br> V = 480VCC<br>MR Sse See<br> V = 15VGE<br>12<br> SAFE OPERATING AREA<br>100<br>8 7, Ty<br>10<br>FARtI<br>4<br>eet A<br>ener meme i<br>|<br>0 A 1 a| il<br>0 20 40 60 80 1 10 100 1000<br>I , Collector-to-Emitter Current (A)C V , Collector-to-E m itter V oltage (V )C E<br>Total Switchig Losses (mJ)<br>I , Collector-to-E m itter Current (A)C<br>**----- End of picture text -----**<br> **Fig. 11 -** Typical Switching Losses vs. Collector-to-Emitter Current **Fig. 12** - Turn-Off SOA **==> picture [175 x 285] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>ee eee ee / Ae ee<br>PF|| Lflt<br>WL T = 150°CJ 1<br>T = 125°CJ<br>10 T = 25°CJ<br>lA<br>Been<br>|2Welveer| |<br>HE Py<br>1 HELL<br>0.6 1.0 1.4 1.8 | 2.2 2.6<br> Forward Voltage Drop - V (V)FM<br>F<br>Instantaneous Forward C urrent - I (A)<br>**----- End of picture text -----**<br> **Fig. 13** - Maximum Forward Voltage Drop vs. Instantaneous Forward Current www.irf.com 6 ## IRG4PC50FDPbF **==> picture [199 x 235] intentionally omitted <==** **----- Start of picture text -----**<br> 140<br>V = 200VR<br>T = 125°CJ<br>120 = T = 25°CJ<br>.<br>100 se tS + | td]<br>“ss =-s<br>80 I = 50AF<br>I F = 25A<br>I = 10AF<br>60<br>NNTT SE<br>TO<br>40<br>20<br>100 1000<br>di /dt - (A/µs)f<br>rr<br>t - (ns)<br>**----- End of picture text -----**<br> **==> picture [202 x 239] intentionally omitted <==** **----- Start of picture text -----**<br> 100 a ee<br>V = 200VR<br>T = 125°CJ<br>T = 25°CJ<br>oe<br>eee<br>I = 50AF<br>eee]<br>I = 25AF<br>10 EE<br>I = 10AF<br>ea<br>1<br>100 1000<br>di /dt - (A/µs)f<br>IRRM<br>I - (A)<br>**----- End of picture text -----**<br> **Fig. 14** - Typical Reverse Recovery vs. dif/dt **Fig. 15** - Typical Recovery Current vs. dif/dt **==> picture [432 x 239] intentionally omitted <==** **----- Start of picture text -----**<br> 1500 10000<br>V = 200VR V = 200VR<br>T = 125°CJ T = 125°CJ<br>T = 25°CJ T = 25°CJ<br>1200<br>900<br>I = 50AF I = 10AF<br>5 of 1000 LOA<br>ai 7<br>600 +___ ¢ ¢\i@<br>I = 25AF <Ne *? eoNogeou™ \Pid eo e Wiy L. @?0 ee",<br>aa oot Ky. ? Y | LF<br>o? oe NX id se I = 25AF<br>300<br>eect 207 Fan | ene TT]<br>ee I = 10AF Zim I = 50AF<br>0 100 oo” oo”<br>100 1000 100 1000<br>di /dt - (A /µs)f di /dt - (A /µs)f<br>RR<br>Q - (nC )<br>di(rec)M /dt - (A/µs)<br>**----- End of picture text -----**<br> **Fig. 16** - Typical Stored Charge vs. dif/dt **Fig. 17** - Typical di(rec)M/dt vs. dif/dt www.irf.com 7 ## IRG4PC50FDPbF **==> picture [179 x 165] intentionally omitted <==** **----- Start of picture text -----**<br> Same type<br>device as<br>D.U.T.<br>80% 430µF<br>of Vce D.U.T.<br>i e<br>Fig. 18a - Test Circuit for Measurement of<br>ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf<br>**----- End of picture text -----**<br> **==> picture [186 x 195] intentionally omitted <==** **----- Start of picture text -----**<br> 90% Vge<br>+Vge<br>Vce<br>90% Ic<br>10% Vce<br>Ic<br>Ic<br>5% Ic<br>td(off) tf<br>t1+5µS<br>Eoff = Vce ic dt<br>t1<br>t1 t2<br>∫<br>**----- End of picture text -----**<br> **Fig. 18b** - Test Waveforms for Circuit of Fig. 18a, Defining Eoff, td(off), tf **==> picture [184 x 163] intentionally omitted <==** **----- Start of picture text -----**<br> GATE VO LTAG E D.U.T.<br>10% +Vg<br>+Vg<br>DUT VO LTAGE<br>Vce<br>AND CURRENT<br>10% Ic<br>Vcc 90% Ic Ipk<br>Ic<br>5% Vce<br>td(on) tr t2<br>Eon = Vce ie dt<br>t1<br>t1 t2<br>∫<br>**----- End of picture text -----**<br> **==> picture [177 x 190] intentionally omitted <==** **----- Start of picture text -----**<br> trr<br>trr<br>Q rr = id dt<br>Ic<br>tx<br>tx<br>10% Irr<br>10% Vcc<br>Vcc<br>Vpk<br>Irr<br>DIODE RECOVERY<br>W AVEFORMS<br>t4<br>Erec = Vd id dt<br>t3<br>DIO DE REVERSE<br>RECOVERY ENERG Y<br>t3 t4<br>∫<br>∫<br>**----- End of picture text -----**<br> **Fig. 18c** - Test Waveforms for Circuit of Fig. 18a, Defining Eon, td(on), tr **Fig. 18d** - Test Waveforms for Circuit of Fig. 18a, Defining Erec, trr, Qrr, Irr www.irf.com 8 ## IRG4PC50FDPbF **==> picture [189 x 176] intentionally omitted <==** **----- Start of picture text -----**<br> Vg GATE SIG NAL<br>DEVICE UNDER TEST<br>CURRENT D.U.T.<br>VOLTAGE IN D.U.T.<br>CURRENT IN D1<br>t0 t1 t2<br>**----- End of picture text -----**<br> Figure 18e. Macro Waveforms for Figure 18a's Test Circuit **==> picture [426 x 51] intentionally omitted <==** **----- Start of picture text -----**<br> 1000VL V *c D.U.T. 0 - 480V RL= 4 X I480VC @25°C<br>50V<br>6000µF<br> 100V<br>**----- End of picture text -----**<br> Figure 19. Clamped Inductive Load Test Circuit Figure 20. Pulsed Collector Current Test Circuit www.irf.com 9 ## IRG4PC50FDPbF ## Notes: Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20) VCC=80%(VCES), VGE=20V, L=10µH, RG = 5.0 Ω (figure 19) Pulse width ≤ 80µs; duty factor ≤ 0.1%. Pulse width 5.0µs, single shot. ## TO-247AC Package Outline Dimensions are shown in millimeters (inches) ## TO-247AC Part Marking Information **==> picture [409 x 85] intentionally omitted <==** **----- Start of picture text -----**<br> EXAMPLE: T HIS IS AN IRFPE30<br>WIT H AS S EMBLY PART NUMBER<br>LOT CODE 5657 INT ERNAT IONAL<br>AS S EMBLED ON WW 35, 2000 RECTIFIER IRFPE 30<br>LOGO 035H<br>IN THE AS S EMBLY LINE "H"<br>56 57<br>Note: "P" in assembly line DAT E CODE<br>position indicates "Lead-Free" AS S EMBLY YEAR 0 = 2000<br>LOT CODE WEEK 35<br>LINE H<br>**----- End of picture text -----**<br> Data and specifications subject to change without notice. **IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 04/04 www.irf.com 10 Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/
Updated at February 9, 2023
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
About Novapart
Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.
Learn more →Stock Shortage Specialist
When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
Request a quote →Compliant Alternatives
We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
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