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IRG4PC40SPBF
IGBT, 60 A, 1.6 V, 160 W, 600 V, TO-247AC, 3 Pins
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single IGBTs
- No. of Pins: 3Pins
- Product Range: IRG4
- Power Dissipation: 160W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-247AC
- Operating Temperature Max: 150°C
- Continuous Collector Current: 60A
- Collector Emitter Voltage Max: 600V
- Collector Emitter Saturation Voltage: 1.6V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 1.93 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
PD -95171 ## IRG4PC40SPbF ## INSULATED GATE BIPOLAR TRANSISTOR ## Standard Speed IGBT ## **Features** - Standard: Optimized for minimum saturation voltage and low operating frequencies ( < 1kHz) - Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 - Industry standard TO-247AC package - Lead-Free **==> picture [194 x 97] intentionally omitted <==** **----- Start of picture text -----**<br> C<br>VCES = 600V<br>G VCE(on) typ. = 1.32V<br>E @VGE = 15V, IC = 31A<br>n-channel<br>**----- End of picture text -----**<br> ## **Benefits** - Generation 4 IGBT's offer highest efficiency available - IGBT's optimized for specified application conditions • Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBT's TO-247AC **Absolute Maximum Ratings** ~~a~~ **Parameter Max. Units** VCES Collector-to-Emitter Breakdown Voltage 600 V IC @ TC = 25°C ~~a~~ Continuous Collector Current 60 IC @ TC = 100°C Continuous Collector Current 31 A CO ICM Pulsed Collector Current 120 ILM ———_———— Clamped Inductive Load Current 120 ae VGE Gate-to-Emitter Voltage ± 20 V EARV © Reverse Voltage Avalanche Energy 15 mJ ~~==~~ PD @ TC = 25°C Maximum Power Dissipation 160 W PD @ TC = 100°C Maximum Power Dissipation 65 TJ Operating Junction and -55 to + 150 TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm from case ) ~~aSS[ee]~~ Mounting torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m) **Thermal Resistance Parameter Typ. Max. Units** R θ JC Junction-to-Case ––– 0.77 R θ CS Case-to-Sink, Flat, Greased Surface 0.24 ––– °C/W R θ JA Junction-to-Ambient, typical socket mount ––– 40 Wt Weight 6 (0.21) ––– g (oz) www.irf.com 1 04/23/04 ## IRG4PC40SPbF ## **Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** **==> picture [433 x 418] intentionally omitted <==** **----- Start of picture text -----**<br> |||||||||||||| |---|---|---|---|---|---|---|---|---|---|---|---|---| |Pe|Parameter|Min.|Typ.|Max.|Units|Conditions| |a|V(BR)CES|Collector-to-Emitter Breakdown Voltage|600|—|—|V|VGE = 0V, IC = 250µA| |V(BR)ECS|Emitter-to-Collector Breakdown Voltage|18|—|—|V|VGE = 0V, IC = 1.0A| |ee|oe|[Se]| |∆|V(BR)CES/|∆|TJ|rs|Temperature Coeff. of Breakdown Voltage|Ge|—|0.75|—|V/°C|VGE = 0V, IC = 1.0mA| |—|1.32|1.5|IC = 31A VGE = 15V| ||||| |VCE(ON)|Collector-to-Emitter Saturation Voltage||tT|—|1.68|—|V|IC = 60A|See Fig.2, 5| |||—|[||1.32|||—|||IC = 31A , TJ = 150°C| |es|VGE(th)|Gate Threshold Voltage|3.0|—|6.0|VCE = VGE, IC = 250µA| |ee|∆|VGE(th)/|∆|TJ|GO|Temperature Coeff. of Threshold Voltage|ts|—|-9.3|—|mV/°C|VCE = VGE, IC = 250µA| |eG|gfe|Forward Transconductance|12|21|OO|—|S|VCE|=|100V, IC = 31A| |ICES|Zero Gate Voltage Collector Current|—|—|250|µA|VGE = 0V, VCE = 600V| |————|—|—|2.0|VGE = 0V, VCE = 10V, TJ = 25°C| |—|—|1000|VGE = 0V, VCE = 600V, TJ = 150°C| |—}—}| |aes|IGES|Gate-to-Emitter Leakage Current|—|esi|—|±100|e|es|nA|VGE = ±20V| |Switching Characteristics @ TJ = 25°C (unless otherwise specified)| |Parameter|Min.|Typ.|Max.|Units|Conditions| |eeee| |Re|Qg|Total Gate Charge (turn-on)|—|ee|100|150|IC = 31A| |a|Qge|Gate - Emitter Charge (turn-on)|—|14|21|nC|VCC = 400V|See Fig. 8| |Qgc|Gate - Collector Charge (turn-on)|—|34|51|VGE = 15V| |ee| |ee|td(on)|Turn-On Delay Time|—|22|—| |tr|Rise Time|—|18|—|TJ = 25°C| |Re|ns| |td(off)|Turn-Off Delay Time|—|650|980|IC = 31A, VCC = 480V| |Re| |a|tf|Fall Time|—|380|570|VGE = 15V, RG = 10|Ω| |Eon|Turn-On Switching Loss|—|0.45|—|Energy losses include "tail"| |Rees| |ee|Eoff|Turn-Off Switching Loss|—|6.5|—|mJ|See Fig. 10, 11, 13, 14| |Ets|Total Switching Loss|—|6.95|9.9| |Re| |td(on)|Turn-On Delay Time|—|23|—|TJ = 150°C,| |ff|tr|Rise Time|—|21|—|ns|IC = 31A, VCC = 480V| |td(off)|Turn-Off Delay Time|—|1000|—|VGE = 15V, RG = 10|Ω| |Reee| |tf|Fall Time|—|940|—|Energy losses include "tail"| |ee| |Ets|Total Switching Loss|—|12|—|mJ|See Fig. 13, 14| |ee| |LE|Internal Emitter Inductance|—|13|—|nH|Measured 5mm from package| |Cies|Input Capacitance|—|2200|—|VGE = 0V| |Re| |Coes|Output Capacitance|—|140|—|pF|VCC = 30V|See Fig. 7| |Re| |Cres|Reverse Transfer Capacitance|—|26|—|ƒ = 1.0MHz| **----- End of picture text -----**<br> **Notes:** ©@ Repetitive rating; VGE = 20V, pulse width limited by Pulse width ≤ 80µs; duty factor ≤ 0.1%. Pulse width ≤ 80µs; duty factor ≤ 0.1%. max. junction temperature. ( See fig. 13b ) © Pulse width 5.0µs, single shot. @ VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 10 Ω , (See fig. 13a) © Repetitive rating; pulse width limited by maximum junction temperature. www.irf.com 2 ## IRG4PC40SPbF **==> picture [433 x 475] intentionally omitted <==** **----- Start of picture text -----**<br> 80<br>For both: Triangular wave:<br>D uty cycle: 50%<br>T = 12 5°CJ<br>oA T = 90 °Csin k ee<br>60 G ate drive as specifie d<br>TN e Power Dissipation = 35W l es C lam p voltage:<br>80% of rated<br>Squ are w ave:<br>40 60% of rated<br> voltage<br>20 OO. ala “ Tu TMNT. P | ETT!<br>Ideal diodes<br>0 -_ a ie T<br>0.1 1 10 100<br>f, Frequen cy (kH z)<br>Fig. 1 - Typical Load Current vs. Frequency<br>(For square wave, I=IRMS of fundamental; for triangular wave, I=IPK)<br>1000 1000<br>a eel ee ee ee eee eee<br>100 100<br>a) Se<br>T = 150°CJ<br>SSennSESH Sacer == =——<br>fe oY eee n7 e —asf | | if |] if<br>T = 25°CJ T = 25°CJ<br>10 p e 10 L e e<br>T = 150°CJ<br>V = 15VG E V = 50VC C<br>1 PEel 20µs PULSE WIDTH A 1 PJPAnne 5µs PULSE WIDTH<br>0.1 1 10 5 6 7 8 9 10<br>V , Collector-to-Emitter Voltage (V)CE V , Gate-to-Emitter Voltage (V)GE<br>Load Current (A)<br>I , Collector-to-Emitter Current (A)C I , Collector-to-Emitter Current (A)C<br>**----- End of picture text -----**<br> **Fig. 2** - Typical Output Characteristics **Fig. 3** - Typical Transfer Characteristics www.irf.com 3 ## IRG4PC40SPbF **==> picture [442 x 480] intentionally omitted <==** **----- Start of picture text -----**<br> 60 2.0<br>V = 15V G E V = 1 5 VG E<br> 80 µ s P U LS E W ID TH<br>50 aNPN Pt tT NE EE eee ane) I = 6 2A LT C J<br>40<br>pot ONG a.<br>30 PNEPt tT | UN 1.5 T<br>I = 3 1AC<br>20 Po) et | EINE |<br>pot tN<br>Pt | tt EN Toe<br>10<br>I = 1 6 AC<br>0 P|fs|) ft | te NS A 1.0 TT( rr A<br>25 50 75 100 125 150 -60 -40 -20 0 20 40 60 80 100 120 140 160<br>T , Case Temperature (°C)C T , Ju nction Tem perature (°C )J<br>Fig. 4 - Maximum Collector Current vs. Case<br>Fig. 5 - Collector-to-Emitter Voltage vs.<br>Temperature<br>Junction Temperature<br>1<br>SS<br>eenra a Ail<br>eea ee a ee ee eee eel<br>D = 0.50<br>FT LU eeeATTTetET ET<br>0.20<br>0.1 e OAT e| |<br>0.10<br>A e PDM<br>e n ee ee eee<br>0.05 t<br>1<br>ca| A SINGLE PULSE ee | t 2<br>0.02 (THERMAL RESPONSE)<br>97 i | LLL N otes:<br>0.01 1 . D uty factor D = t / t 1 2<br>2. Pea k T = P x Z + T J D M thJC C<br>0.01<br>0.00001 0.0001 0.001 0.01 0.1 1 10<br>t , Rectangular Pulse Duration (sec)1<br>Maximum DC Collector Current (A) C E<br>V , Collector-to-Em itter Voltage (V)<br>thJC<br>Thermal Response (Z )<br>**----- End of picture text -----**<br> **Fig. 6** - Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 4 ## IRG4PC40SPbF **==> picture [434 x 479] intentionally omitted <==** **----- Start of picture text -----**<br> 4000 20<br>V = 0V , f = 1M HzG E V = 400VCE<br>C = C + C , C SHORTEDies ge gc ce I = 31AC<br>C = Cres gc<br>C = C + Coes ce gc 16<br>3000<br>C ies<br>Set)| ee 12 ee<br>2000<br>8<br>C oes<br>1000 | al AS<br>4<br>C res<br>STS eeepc<br>0 PRE A 0 Pott tT tt<br>1 10 100 0 20 40 60 80 100 120<br>V , Collector-to-Em itter Voltage (V)CE Q , Total Gate Charge (nC)g<br>Fig. 7 - Typical Capacitance vs. Fig. 8 - Typical Gate Charge vs.<br>Collector-to-Emitter Voltage Gate-to-Emitter Voltage<br>7.8 100<br> V = 480VCC R = 10G Ω<br> V = 15VGE V = 15VGE<br> T = 25°CJ V = 480VCC<br>7.7 I = 31AC Pf LL PEER I = 62AC EE<br>RE Pi yy pete yee yy ye et<br>7.6 Seeeeeee Zee eettt tpA eTe I = 31AC<br>10<br>7.5 I = 16AC<br>/ PEeee<br>7.4<br>Sa oe ee<br>7.3 Pp A 1 PEPE EEE EEE<br>0 10 20 30 40 50 60 -60 -40 -20 0 20 40 60 80 100 120 140 160<br>R , Gate Resistance (G Ω ) T , Junction Temperature (°C)J<br>C, Capacitance (pF)<br>GE<br>V , Gate-to-Em itter Voltage (V)<br>Total Switching Losses (m J) Total Switching Losses (m J)<br>**----- End of picture text -----**<br> **Fig. 9** - Typical Switching Losses vs. Gate Resistance **Fig. 10** - Typical Switching Losses vs. Junction Temperature www.irf.com 5 ## IRG4PC40SPbF **==> picture [431 x 199] intentionally omitted <==** **----- Start of picture text -----**<br> 30 1000<br> R = 10G Ω V = 20VG EGE<br> T = 150°CJ T = 125°CJ<br> V = 480VC C<br>ELD L ESS<br> V = 15VG E<br>/ a |<br>20 4 100 ep!<br> SAFE OPE RA TING A RE A<br>ee<br>10 PL | AE/ Ly 10 LFee<br>LL FARA|<br>0 Py fy fp py | A 1 OEa eeCi eeCoal<br>0 10 20 30 40 50 60 70 1 10 100 1000<br>I , Collector-to-Emitter Current (A)C V , Collector-to-Em itter Voltage (V)C E<br>Total Switching Losses (mJ)<br>C<br>I , Collector-to-Emitter Current (A)<br>**----- End of picture text -----**<br> **==> picture [168 x 21] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 11 - Typical Switching Losses vs.<br>Collector-to-Emitter Current<br>**----- End of picture text -----**<br> **Fig. 12** - Turn-Off SOA www.irf.com 6 ## IRG4PC40SPbF **==> picture [415 x 499] intentionally omitted <==** **----- Start of picture text -----**<br> L D.U.T.<br>50V V *C 0 - 480V RL = 4 X I480VC@25°C<br>1000V 480µF<br>960V<br>* Driver same type as D.U.T.; Vc = 80% of Vce(max) ®@ tt<br>* Note: Due to the 50V pow er supply, pulse width and inductor<br> w ill increase to obtain rated Id.<br>Fig. 13a - Clamped Inductive Fig. 13b - Pulsed Collector<br>Load Test Circuit Current Test Circuit<br>I C<br>L<br>D river* D.U.T. Fig. 14a - Switching Loss<br>ee TO VC — Test Circuit<br>50V<br>1000V<br>* Driver same type<br> as D.U.T., VC = 480V<br>i ;<br>90%<br>10%<br>VC<br>90% t d(o ff) Fig. 14b - Switching Loss<br>Waveforms<br>I C 5% 10%<br>t r t f<br>t d (o n) t=5µs<br>- : E o n a E o ff<br>E = (E +E )ts o n off<br>**----- End of picture text -----**<br> www.irf.com 7 ## IRG4PC40SPbF ## TO-247AC Package Outline Dimensions are shown in millimeters (inches) ## TO-247AC Part Marking Information **==> picture [413 x 90] intentionally omitted <==** **----- Start of picture text -----**<br> EXAMPLE: THIS IS AN IRFPE30<br>WIT H AS S EMBLY PART NUMBER<br>LOT CODE 5657 INTERNATIONAL<br>AS SEMBLED ON WW 35, 2000 RECTIFIER IRFPE30<br>LOGO 035H<br>IN THE AS SEMBLY LINE "H"<br>56 57<br>Note: "P" in assembly line = DATE CODE<br>position indicates "Lead-Free" AS SEMBLY YEAR 0 = 2000<br>LOT CODE WEEK 35<br>LINE H<br>**----- End of picture text -----**<br> **IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** _Data and specifications subject to change without notice. 04/04_ www.irf.com 8 Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/
Updated at February 9, 2023
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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