IRG4PC40KDPBF

IGBT, 42 A, 2.1 V, 160 W, 600 V, TO-247AC, 3 Pins

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Manufacturer: INFINEON
Product type: Single IGBTs
No. of Pins: 3Pins
Power Dissipation: 160W
Transistor Mounting: Through Hole
Transistor Case Style: TO-247AC
Operating Temperature Max: 150°C
Continuous Collector Current: 42A
Collector Emitter Voltage Max: 600V
Collector Emitter Saturation Voltage: 2.1V

Delivery and price
Units per pack	100
Price	3.31 €
Current stock	10+
Lead time	30 days

Datasheet

## **Features** 

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C<br>Vces =<br>=<br>G VcE(on) typ.<br>E @Vee = 15V,<br>n-channel<br>**----- End of picture text -----**<br>


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TO-247AC<br>**----- End of picture text -----**<br>


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[Visaces | Colestorto-Emiter Breakdown Votlage® | 600| — | — | V | Vce=OV,lo=250UA<br>∆ ∆<br>F Viseres Ty | Temperature Coeff. of Breakdown Votage | — |0.46| — | VC | Voe=OV,Io=1.0mA<br>Vce(on) Collector-to-Emitter Saturation Voltage | — [2.10]2.6 | Ic = 25A Vee = 15V<br>|Vcen | — [214] — | Ic = 25A, Ty = 150°C<br>∆ ∆<br>[Veen |Gate Threshold Voltage | 3.0 | — | 60 | | Vce=VoeIo=250HA<br>Fie Tu | Temperature Coeff of Threshold Votage [| — [13 | — |mVPO| Voe=Voe,lo= 250A<br>feIces [ForwardZeroReeGateTransconductance@VoltageSepeaeetCollector Current|[27S| 70— | 14|— |250]son]—| S$pA |cov.veestooy=60e—WsVce=100V,lo=25A<br>ceVem PeeteDiode Forward Voltage Drop }—Sate [1.3/4.7] V |beemeneameIc=15A See"|Fig. 13<br>Switching Characteristics @ Ty = 25°C (unless otherwise specified)<br>|| Parameter | Min. | Typ. | Max. | units| Conditions<br>[Q, | Total Gate Charge (turn-on) | — | 120 | 180 Ic = 25A<br>Qj | Gate= Collector Charge turn-on) | — | 81 | 77 |_| Voe=18V<br>fran<br>SS~—~—sSCSsS<br>[taomfh —S«dRiseTimeBoag Tne BT — | | T= DBC<br>Ω<br>ft | Turn-Off DelayTime | — | 110 | 160 | Ic = 25A, Vec = 480V<br>[Eon [FalTime | = | 100] 150 | Vor = 15V, Re = 10<br>Loss|<br>[Eo[Ew | Turn-O ffn SwitchSwitch ing  Loss | —— [0.95][0.76] —— || mJ | EnergySee Fig. losses 9,10,14 include "tail"<br>tsc | ShortTotal CircuitSwitchingWithstand loss Time——SSS=dY 10‘|. | 28 Us | Voc = 360V, Ty = 125°C<br>Ω<br>aon | Turm-On DelayTime _—=S—~isC + | — |_| T= 180,<br>ft [RiseTime | SH | 87 | Ic = 25A, Voc = 480V<br>Ω<br>**----- End of picture text -----**<br>


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30<br>For both:<br>25 e e Duty cycle: 50%<br>T   = 125°CJ<br>T        = 90°Csink<br>a ao™|le Gate drive as specified e eHill<br>20 Power Dissipation =    W<br>Square wave:<br>15 eg 60% of rated  nn _MLElll<br>         voltage<br>i I A EEE SNELL<br>10 |: aN<br>ca Ideal diodes alll<br>5<br>ee UU ETT PP<br>LE EET<br>0<br>0.1  1  10  100<br>f, Frequency (KHz)<br>Fig. 1 - Typical Load Current vs. Frequency<br>(Load Current = Ipms of fundamental)<br> 100 100<br>aeee a ee ee ee<br>elley A ee ee<br>T  = 150°CJ<br>| T  = 150  CJ o ee ll P O<br>T  = 25°CJ<br> 10 ouft | dE U 10 e||<br>Po TTT HP T  = 25  CJ o i Ap ee eee eee eee ee eee<br>ellHf Mill ff fF | | |<br>a ell V      = 15VGE yf | — | V      = 50VCC 4]<br> 1 | 20µs PULSE WIDTH 1 Aee<br>0.1  1  10 5 7 9 11<br>V     , Collector-to-Emitter Voltage (V)CE V    , Gate-to-Emitter Voltage (V)GE<br>LOAD CURRENT (A)<br>I   ,  Collector-to-Emitter Current (A)C I   , Collector-to-Emitter Current (A)C<br>**----- End of picture text -----**<br>


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50 5.0<br>V      = 15VGE<br>80 us PULSE WIDTH<br>T OE<br>I   =       AC 50<br>40 PEPE Pape Eg<br>4.0<br>PSLTTTTT |Ty Pe LLtr<br>30 rTFCP NCEEEETaNrT] ReeceBOBPP.oeBe ee<br>3.0<br>20 | | | | | ||IN Na| | P=28Bee e<br>I   =       AC 25<br>Pt tee TET TI N [I O ne Gn 08 0 ne ee<br>10 pitttf| tTitt|tNIN 2.0 seSEPEEeeReeee epS I   =       AC 12.5 an<br>0 PitT} | Ttyti 1.0 SeESG8Se<br>25 50 75 100 125 150 -60 -40 -20 0 20 40 60 80 100 120 140 160<br>T   , Case Temperature (    C)C ° T   , Junction Temperature (  C)J °<br>Fig. 4 - Maximum Collector Current vs. Case Fig. 5 - Typical Collector-to-Emitter Voltage<br>Temperature vs. Junction Temperature<br> 1 ee<br>D = 0.50<br>e e Tne een<br>rp<br>e 0.20 =ap== ee e|ott ee| el<br>0.1 - 0.10 ee es a<br>eel ee ee PDM<br>0.05<br>t1<br>= [e][e]<br>0.02 SINGLE PULSE t2<br>Se 0.01 aT (THERMAL RESPONSE)  | Notes:<br>wae 9. diemenea tii] 0<br>1. Duty factor D = t   / t1 2<br>2. Peak TJ= PDM x  Z thJC + TC<br>0.01 dillT y | MA C|ETTT<br>0.00001 0.0001 0.001 0.01 0.1  1<br>t  , Rectangular Pulse Duration (sec)1<br>Maximum DC Collector Current(A) CE<br>V     , Collector-to-Emitter Voltage(V)<br>thJC<br>Thermal Response (Z        )<br>**----- End of picture text -----**<br>


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3000 VGE = 0V, f = 1MHz 20 VCC = 400V<br>2500 = CCCiesresoes === CCCgegcce + C+ Cgc ,gc C      SHORTEDce 16 C I C = 25A AE<br>i PEt<br>2000 SE 0 iit<br>Cies 12<br>Sel tl ee SERRE TyEEEP aee<br>1500<br>| | EE RRRREP Zee<br>| Span<br>8<br>A == 450 n8ne<br>1000<br>WA WTP<br>!<br>4<br>500 PAN FeEEReeeeeeeee<br>Coes<br>Cres<br>0 “=Po =Eee| 0 aARERReee<br> 1  10  100 0 20 40 60 80 100 120 140<br>V     , Collector-to-Emitter Voltage (V)CE Q   , Total Gate Charge (nC)G<br>Fig. 7 - Typical Capacitance vs. Fig. 8 - Typical Gate Charge vs.<br>Collector-to-Emitter Voltage Gate-to-Emitter Voltage<br>3.00  100<br>V      = 480VCC R      =GG Ωmm<br>V      = 15VT      = 25   CJGE ° V      = 15VV      = 480VGECCV      = 480VGECCGECCCC<br>I       = 25AC<br>2.50 aaP| |ap  10 eReeeeeeeeeeeeeeee<br>VA PE TE I   =       ACC 50<br>Ea pS Gees SSeS == == eee<br>a EE yb<br>I   =       ACC 25<br>Phy ay Pp ee I   =       ACC 12.5<br>2.00  1<br>La ul He Oe We Oe OO OO ee<br>Bape So t<br>1.50 aaWzP| |P| |P| |aa 0.1 G6 P et OeEdeppOeEEE ep pee OeEdeppOeEEE ep peeEdeppOeEEE ep peedeppOeEEE ep peeOeEEE ep peeEEE ep pee ep peep pee pee e EEE<br>0 10 20 30 40 50 -60 -40 -20 0 20 40 60 80 100 120 140 160<br> ( Ω ) (Ohm) T  , Junction Temperature (  C )JJ °<br>C, Capacitance (pF)<br>GE<br>V     , Gate-to-Emitter Voltage (V)<br>Total Switching Losses (mJ) Total Switching Losses (mJ)<br>**----- End of picture text -----**<br>


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 100<br>R      =GG Ωmm<br>V      = 15VV      = 480VGECCV      = 480VGECCGECCCC<br> 10 eReeeeeeeeeeeeeeee<br>PE TE I   =       ACC 50<br>Ea pS Gees SSeS == == eee<br>EE yb<br>I   =       ACC 25<br>Pp ee I   =       ACC 12.5<br> 1<br>ul He Oe We Oe OO OO ee<br>So t<br>0.1 G6 P et OeEdeppOeEEE ep pee OeEdeppOeEEE ep peeEdeppOeEEE ep peedeppOeEEE ep peeOeEEE ep peeEEE ep pee ep peep pee pee e EEE<br>-60 -40 -20 0 20 40 60 80 100 120 140 160<br>T  , Junction Temperature (  C )JJ °<br>Total Switching Losses (mJ)<br>**----- End of picture text -----**<br>


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8.0  1000<br>R      = G mΩ V      = 20VGE<br>T      = 150  CJ ° T      = J<br>V      = 480VCC<br>V      = 15VGE<br>J | |ll<br>6.0<br> 100<br>PE tL EEL VY |<br>4.0<br> 10<br>+H LA<br>2.0<br>SAFE OPERATING AREA<br>0.0 PEt TELE yt  1 pe eil<br>0 10 20 30 40 50  1  10  100  1000<br>I    , Collector-to-emitter Current (A)C V     , Collector-to-Emitter Voltage (V)CE<br>Total Switching Losses (mJ)<br>C<br>I   ,  Collector-to-Emitter Current (A)<br>**----- End of picture text -----**<br>


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100 a<br>eeee<br>re ee ee<br>P| | | | Ur sy I<br>ey<br>cnny An<br>Aan<br>10<br>Yr | {| ff fT | ff |<br>ne Aree T  = 150°C ||<br>J<br>| | UF |<br>naa T  = 125°CJ _<br>T  =   25°CJ<br>am a<br>a An 7<br>EE|__|<br>1<br>0.8 1.2 1.6 2.0 2.4<br> Forward Voltage Drop - V      (V)FM<br>F<br>Instantaneous Forward Current - I    (A)<br>**----- End of picture text -----**<br>


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100 100<br>V  = 200VR V  = 200VR<br>ll T  = 125°CJ en! an T  = 125°CJ anne<br>T  = 25°CJ T  = 25°CJ<br>80 papsPTT If=eeeaFERS e  aeea<br>I   = 30AF<br>I   = 30AF I   = 15AF<br>60 10<br>Po i ne<br>I   = 15AF<br>STN Po aeAff"<br>a<br>I   = 5.0AF<br>40 PN wi<br>— Ta ma n<br>I   = 5.0AF<br>rs P o<br>Tt<br>20 1<br>i eeee<br>100 1000 100 1000<br>di  /dt - (A/µs)f di  /dt - (A/µs)f<br>Fig. 14 - Typical Reverse Recovery vs. di;/dt Fig. 15 - Typical Recovery Current vs. dir/dt<br>800 1000 |-————“_<br>-] V  = 200VT  = 125°CT  = 25°CRJJ || V  = 200VT  = 125°CT  = 25°CRJJ -|a| | |SZAy 4Y<br>600<br>I   = 30AF<br>ee) All<br>| he yd I   = 5.0AF ) enn<br>400<br>I   = 15AF I   = 15AF<br>Pe TDNAT A yy f f<br>I   = 5.0AF I   = 30AF<br>200<br>TT<br>0 100<br>100 1000 100 1000<br>di  /dt - (A/µs)f di  /dt - (A/µs)f<br>t    -  (ns)rr I         - (A)IRRM<br>RR<br>Q       -  (nC)<br>di(rec)M/dt  -  (A/µs)<br>**----- End of picture text -----**<br>


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Same type<br>device as<br>D.U.T.<br>80% 430µF<br>of Vce D.U.T.<br>**----- End of picture text -----**<br>


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GATE VOLTAGE D.U.T.<br>10% +Vg<br>+Vg<br>DUT VOLTAGE<br>Vce<br>AND CURRENT<br>Vcc [10% Ic] 90% Ic Ipk<br>Ic<br>PAN td(on) tr 5% Vce G<br>t2<br>Eon =<br>t1<br>t1 t2<br>**----- End of picture text -----**<br>


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90% Vge<br>+Vge<br>Vce<br>90% Ic<br>10% Vce<br>Ic<br>Ic<br>5% Ic<br>td(off) tf<br>t1+5µS<br>Eoff =<br>t1<br>t1 t2<br>**----- End of picture text -----**<br>


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trr<br>trr<br>Ic — —! Qrr = t<br>tx<br>tx<br>10% Irr<br>10% Vcc<br>Vcc<br>Vpk<br>Irr<br>DIODE RECOVERY<br>WAVEFORMS<br>a eveeecenncsseeeernnnesstecen<br>t4<br>Erec =<br>t3<br>DIODE REVERSE<br>RECOVERY ENERGY<br>t3 t4<br>**----- End of picture text -----**<br>


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Vg GATE SIGNAL<br>DEVICE UNDER TEST<br>CURRENT D.U.T.<br>‘<br>’<br>:<br>L171 i<br>VOLTAGE IN D.U.T.<br>LOA't'<br>: CURRENT IN D1<br>’<br>:<br>t 1<br>1 1<br>Ut!<br>t0 t1 t2<br>**----- End of picture text -----**<br>


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L D.U.T.<br>1000V V *c<br>50V<br>6000µF<br> 100V<br>**----- End of picture text -----**<br>


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## Notes: 

- Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature 

- (figure 20) 

- VCC=80%(VCES), VGE=20V, L=10µH, RG= 10Ω (figure 19) 

- Pulse width ≤ 80µs; duty factor ≤ 0.1%. 

Pulse width 5.0µs, single shot. 

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3.65 (.143) - D -<br>15.90 (.626) 3.55 (.140) 5.30 (.209)<br>15.30 (.602) 0.25 (.010) M D B M 4.70 (.185)<br>= - B - - A - _ 2.50 (.089)<br>1.50 (.059)<br>5.50 (.217) 4<br>20.30 (.800) | ofpLOYog > tHm5<br>19.70 (.775) 2X 5.50 (.217) NOTES:<br>4.50 (.177) 1  DIMENSIONING & TOLERANCING<br>    PER ANSI Y14.5M, 1982.<br>1 2 3 2  CONTROLLING DIMENSION : INCH.<br>3  CONFORMS TO JEDEC OUTLINE<br>I aunar - C - : I      TO-247-AC.<br>14.80 (.583)<br>4.30 (.170)<br>14.20 (.559) 3.70 (.145)<br>LEAD ASSIGNMENTS<br>Hexfet IGBT<br>2.40 (.094)2.00 (.079) tie 3X 1.40 (.056)1.00 (.039) 3X [0.80 (.031)] 0.40 (.016) 1 - Gate2 - Drain LEAD 1 - GATE ASSIG NMENTS 1 - Gate2 - Collector<br>C.J 5.45 (.215)2X2X il 3.40 (.133)3.00 (.118)0.25 (.010) M C A S a 2.60 (.102)2.20 (.087) 3 - Source4 - Drain2 - DRAIN3 - SOURCE4 - DRAIN3 - Emitter4 - Collector<br>**----- End of picture text -----**<br>


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EXAMPLE: THIS IS AN IRFPE30<br>WITH ASSEMBLY  PART NUMBER<br>LOT CODE 5657 INTERNATIONAL<br>ASSEMBLED ON WW 35, 2000 RECTIFIER IRFPE30<br>IN THE ASSEMBLY LINE "H" Note:   "P" in assembly line LOGO | IgR 56           57 035H DATE CODE<br>position indicates "Lead-Free" ASSEMBLY YEAR 0 =  2000<br>LOT CODE WEEK 35<br>LINE H<br>**----- End of picture text -----**<br>


Data and specifications subject to change without notice. International 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 12/03 

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Note:  For the most current drawings please refer to the IR website at: http://www.irf.com/package/

Updated at February 9, 2023

Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.

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