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IRG4PC40FDPBF
IGBT, 49 A, 1.85 V, 160 W, 600 V, TO-247AC, 3 Pins
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single IGBTs
- No. of Pins: 3Pins
- Power Dissipation: 160W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-247AC
- Operating Temperature Max: 150°C
- Continuous Collector Current: 49A
- Collector Emitter Voltage Max: 600V
- Collector Emitter Saturation Voltage: 1.85V
| Delivery and price | |
|---|---|
| Units per pack | 100 |
| Price | 2.0 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## **Features** **==> picture [62 x 96] intentionally omitted <==** **----- Start of picture text -----**<br> C<br>G<br>E<br>n-channel<br>**----- End of picture text -----**<br> **==> picture [39 x 7] intentionally omitted <==** **----- Start of picture text -----**<br> TO-247AC<br>**----- End of picture text -----**<br> **==> picture [373 x 82] intentionally omitted <==** **----- Start of picture text -----**<br> θ |dunctionto-Case-IGBTSSSC~SS<br>Ric Parameter Min. Typ.<br>θ<br>Ric iY S|<br>θ<br>RRs | Junetion-to-Case- Diode SSCs | |<br>[Ra | Caseto-Sink, flat, greased surface =| = —*+| oad |<br>Wt ___—_| Junetion-to-Ambient,Weight typical socket mount |---|oe 6 (0.21) |<br>www.irf.com<br>**----- End of picture text -----**<br> 1 **==> picture [423 x 351] intentionally omitted <==** **----- Start of picture text -----**<br> [Veaces ∆ ∆ | Collestorto-EmiterParameter Breakdown Volage@] Min.600 |[-—Typ. [==|Max. ||UnitsV_| Vee Conditions<br>[ Vines! Ty Temperature Coe. of Breakdown Votage | —-- [0:70 [= [VPC | Vec== OV, loIe = 251. 0 mu A<br>| VcE(on) | Collector-to-Emitter Saturation Voltage |an---- |1.50| 1.7 | Ic Ic = = 27A 49A See Voe Fig. = 15V 2,5<br>[Vecey | ---- [1.56 | ---- | Ic = 27A, Ty = 150°C<br> ∆ ∆<br>fae Tul Temperature Coeff. of Threshold Vottage| — [12 [—— |mVPC| Vcr = Vee, lc = 250uA<br>IcEs | Forward Transconductance © [92 [42 [== | S| Vee 100V, lo= 27A<br>Zero Gate Voltage Collector Current |geno---- | ---- [3500 | | Voe = OV, V ocece = 60 0V,0V Ty = 150°C<br>[Veet VeM [Gate Diode Threshold Forward Voltage Voltage Drop «SO}---- [=[1.3/4.7] [60] Vv | | Ic=15A Voe= Vor= See Fig. 13<br>| ---- | 1.2 | 1.6 | Ic = 15A, Ty = 150°C<br>IcES Gate-to-Emitter Leakage Current ---- | ---- [+100] nA | Vee = +20V<br>Switching Characteristics @ Ty = 25°C (unless otherwise specified)<br>[Q, Parameter Min.| Typ. | Max.| Units Conditions<br>[Qge | Total Gate Charge (turn-on) | ---- | 100 | 150 Ic = 27A<br>[Que | Gate - Emitter Charge (turn-on) | | 15 | 23 | nC | Voc=400V See Fig. 8<br>[ton | Gate - Collector Charge (turn-on) | ~~ | 35 | 53 | Vor = 15V<br>ft | Turn-OnDelayTime |---| 63 |---| T)=25°C<br>Ω<br>[tam | RiseTime | | 32 | |) ons | Ie = 27A, Veo = 480V<br>fe | Turn-Off Delay Time | === | 230 350] | Ve = 18V, Ra = 10<br>[Eon | FallTime | 170] 250 Energy losses include "tail" and<br>[Ep | Tur n-On-OffSwitchinSwitchin g L oss|oss|--== - -- | 02 . 9501 ] --—— -- || mJ diode reverse recovery.<br>Loss|<br>[Es[ton | Total Switching —~ | 2.96] 4.0 | | See Fig. 9, 10, 11, 18<br>ft | Turn-OnDelayTime |---| 63 | ---| T= 150°C, See Fig. 9, 10, 11, 18<br>Ω<br>[tam RiseTime | 83 | | ons | Ie = 27A, Veo = 480V<br>**----- End of picture text -----**<br> www.irf.com 2 **==> picture [437 x 488] intentionally omitted <==** **----- Start of picture text -----**<br> 40<br>Duty cycle: 50%<br>T = 125°CJ<br>T = 90°Csink<br>30 a Gate drive as specifiedTurn-on losses include<br>effects of reverse recovery<br>Power Dissipation = 35W<br>St e e<br>60% of rated<br>20 voltage<br>J,<br>10<br>0<br>0.1 1 10 100<br>f, Frequency (kHz)<br>Fig. 1 - Typical Load Current vs. Frequency<br>(Load Current = Ips of fundamental)<br>1000 1000<br>~¢55 PE ft ft Ett== ie tty pi fifo} ft ——<br>T = 25°CJJ<br>100 100<br>BS [e e pf | |eet<br> ———— ee T = 150°CJ ae ee<br>T = 150°CJJ<br>a e e s A A<br>ri Ze e e Pi<br>T = 25°CJ<br>P 10 LA 10 | A A tdtP<br>V = 15VGEGE V = 50VCC<br>8—a—agence) 1 gence) A 1 FELT A E sesarouse word<br>1 10 5 6 7 8 9 10 11 12<br>V , Collector-to-Emitter Voltage (V)CE V , Gate-to-Emitter Voltage (V)GE<br>Load Current (A)<br>I , Collector-to-Emitter Current (A)C<br>**----- End of picture text -----**<br> **==> picture [212 x 198] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>~¢55 PE ft ft Ett== ie tty<br>T = 25°CJJ<br>100<br>BS [e e<br> ————<br>T = 150°CJJ<br>a e e s<br>ri Ze e e<br>P 10 LA<br>V = 15VGEGE<br>8—a—agence)<br>1<br>1 10<br>V , Collector-to-Emitter Voltage (V)CE<br>**----- End of picture text -----**<br> www.irf.com 3 **==> picture [433 x 480] intentionally omitted <==** **----- Start of picture text -----**<br> 50<br>2.5<br>MEE S) fle e I = 54AC<br>40<br>PN P] pepe LE<br>PEN 2.0 Lee r<br>30<br>ee eee “an<br>ee<br>20 ae Ce ee ee I = 27AC<br>rT rs fs fTeNee ONT] 1.5 eee tee eel<br>10<br>ee<br>tttNY oe ee I = 14AC<br>0 PN 1.0 LEE A<br>25 50 75 100 125 150 -60 -40 -20 0 20 40 60 80 100 120 140 160<br>T , Case Temperature (°C)C T , Junction Temperature (°C)J<br>Fig. 4 - Maximum Collector Current vs. Case Fig. 5 - Typical Collector-to-Emitter Voltage<br>Temperature vs. Junction Temperature<br>1 a eS ee ee<br>ee<br>D = 0.50<br>F TLL eTeA ILEE<br>e 0.20 ee<br>0.1 e ee a a |<br>0.10<br>amg O 8 tt eeDedd PDM<br>0.05 t<br>1<br>—| eA SINGLE PULSE HoHee ey + t 2<br>0.02 (THERMAL RESPONSE)<br>a9 a7 ii Oe | DL tSt _ l<br>0.01 1. Duty factor D = t / t 1 2<br>UI I<br>0.01<br>CE TUTE TT cee ee ee ones<br>0.00001 0.0001 0.001 0.01 0.1 1 10<br>t , Rectangular Pulse Duration (sec)1<br>Maximum DC Collector Current (A)<br>CE<br>V , Collector-to-Emitter Voltage (V)<br>thJC<br>Thermal Response (Z )<br>**----- End of picture text -----**<br> www.irf.com 4 **==> picture [435 x 208] intentionally omitted <==** **----- Start of picture text -----**<br> 4000 20<br>Cres = Cce<br>16<br>3000<br>TE =| FOOTE<br>s<br>eg ASaom> 12 Gee a<br>2000<br>i Oe eee ee<br>8<br>ae Hj iti<br>S 1000 RN es | ft<br>TIE PET A<br>4<br>s<br>Se DK 7<br>0 Po RS A 0 ARSE GEESE<br>1 10 100 0 20 40 60 80 100 120<br>V , Collector-to-Emitter Voltage (V)CE Q , Total Gate Charge (nC)g<br>GE<br>V , Gate-to-Emitter Voltage (V)<br>**----- End of picture text -----**<br> **==> picture [413 x 201] intentionally omitted <==** **----- Start of picture text -----**<br> 3.3 100<br> R = 10G Ω<br> V = 15VGE<br>= L ~ V = 480VCC Petpetey yy ee yt<br>3.2 al =27A | Yt/ | es 10 LEEEREEEEE E EEEL<br>I = 54AC<br>ty TAR} Bo R y<br>/ 2 Fec es I = 27AC<br>Y 2 foe —_ tion e<br>I = 14AC<br>3.1 1<br>f 2 Pi yey ee ee Pe et eT<br>3.0 naVaeeeeeeeeVA A 0.1 SERREPEEERE eeeee<br>0 10 20 30 40 50 60 -60 -40 -20 0 20 40 60 80 100 120 140 160<br>R , Gate Resistance (G Ω ) T , Junction Temperature (°C)J<br>**----- End of picture text -----**<br> www.irf.com 5 **==> picture [433 x 522] intentionally omitted <==** **----- Start of picture text -----**<br> 12 1000<br>Ω<br>S 10 iV =480V Pt TE x a eeeee<br>=2 pb -w | |.|S |||<br>f y<br>» 8 tit tt YE 100 a<br>D ae eeeeeeeee eet<br>6<br>‘< /| i<br>4 10<br>etEtyey PARA<br>2<br>c ee4suceeeee |<br>0 Po A Mog 1 a 5csi<br>0 10 20 30 40 50 60 1 10 100 1000<br>I , Collector-to-Emitter Current (A)C V , Collector-to-Emitter Voltage (V)CE<br>Fig. 11 - Typical Switching Losses vs. Fig. 12 - Turn-Off SOA<br>Collector-to-Emitter Current<br>100 a ee<br>a<br>ee ee oe |<br>Pot|<br>eeAe<br>|<br>na<br>10<br>ae s/s<br>es ee A<br>ne ae |<br>T = 150°C<br>J<br>on) a= -_<br>T = 125°CJ<br>am _<br>|WiTysa|| T = 25°CJ |||<br>AL<br>1<br>0.8 ii 1.2 | 1.6 2.0 | 2.4<br> Forward Voltage Drop - V (V)FM<br>I , Collector-to-Emitter Current (A)C<br>F<br>Instantaneous Forward Current - I (A)<br>**----- End of picture text -----**<br> www.irf.com 6 **==> picture [433 x 519] intentionally omitted <==** **----- Start of picture text -----**<br> 100 100<br>eee V = 200VT = 125°CRJ | | V = 200VT = 125°CRJ a fT fTSeTT TT<br>T = 25°CJ T = 25°CJ<br>80<br>pe] FR<br>I = 30AF<br>a Pt a ee e<br>I = 30AF Pall | I = 15AF re<br>60 10<br>I = 15AF<br>WA OL t e<br>Ze SZ<br>I = 5.0AF<br>40 FY oN wr |<br>—— I = 5.0AF LE<br>— — Aannnl<br>Tt<br>20 Pe 1 ll<br>100 1000 100 1000<br>di /dt - (A/µs)f di /dt - (A/µs)f<br>Fig. 14- Typical Reverse Recovery vs. di;/dt Fig. 15 - Typical Recovery Current vs. di;/dt<br>800 es V = 200VT = 125°CT = 25°CRJJ 1000 |———___|| V = 200VT = 125°CT = 25°CRJJ a | |Ay<br>ps | ere)<br>600<br>I = 30AF<br>eee) e/a<br>400 —- acne ey I = 5.0AF ) enn<br>I = 15AF I = 15AF<br>I = 5.0AF oe an I = 30AF Lf<br>a ae “7<br>200<br>aS<br>0 100<br>100 1000 100 1000<br>di /dt - (A/µs)f di /dt - (A/µs)f<br>t - (ns)rr I - (A)IRRM<br>RR<br>Q - (nC)<br>di(rec)M/dt - (A/µs)<br>**----- End of picture text -----**<br> www.irf.com 7 **==> picture [407 x 468] intentionally omitted <==** **----- Start of picture text -----**<br> 90% Vge<br>+Vge<br>Same typedevice as Vce<br>D.U.T.<br>90% Ic<br>10% Vce<br>Ic<br>Ic<br>80% 430µF 5% Ic<br>of Vce D.U.T.<br>td(off) tf<br>t1+5µS<br>Eoff = Vce ic dt<br>t1<br>Fig. 18a - Test Circuit for Measurement of fx<br>Eon, Eottidiode): tr: Qrr rr, tacon); tr, tacotty, t <——_———_}<br>t1 t2<br>Fig. 18b - Test Waveforms for Circuit of Fig. 18a,<br>Fost, taotry, t<br>trr<br>GATE VOLTAGE D.U.T. trr Qrr = id dt<br>Ic<br>tx<br>10% +Vg<br>+Vg<br>tx<br>10% Irr<br>10% Vcc<br>Vcc<br>DUT VOLTAGE<br>Vce<br>AND CURRENT Vpk<br>Irr<br>Vcc [[10% Ic]] 90% Ic Ipk<br>Ic<br>DIODE RECOVERY<br>WAVEFORMS<br>PANG td(on) tr 5% Vce ee foeeeeeececcccssseeecbeced<br>t2<br>Eon = Vce ie dt t4<br>t1 Erec = Vd id dt<br>t3<br>t1 t2 DIODE REVERSE<br>RECOVERY ENERGY<br>t3 t4<br>∫<br>∫<br>∫<br>∫<br>**----- End of picture text -----**<br> **==> picture [186 x 164] intentionally omitted <==** **----- Start of picture text -----**<br> GATE VOLTAGE D.U.T.<br>10% +Vg<br>+Vg<br>DUT VOLTAGE<br>Vce<br>AND CURRENT<br>Vcc [[10% Ic]] 90% Ic Ipk<br>Ic<br>PANG td(on) tr 5% Vce<br>t2<br>Eon = Vce ie dt<br>t1<br>t1 t2<br>∫<br>**----- End of picture text -----**<br> www.irf.com 8 **==> picture [191 x 176] intentionally omitted <==** **----- Start of picture text -----**<br> Vg GATE SIGNAL<br>DEVICE UNDER TEST<br>CURRENT D.U.T.<br>‘<br>’<br>:<br>L171 i.<br>VOLTAGE IN D.U.T.<br>alan't'<br>: CURRENT IN D1<br>‘<br>:<br>' 1<br>1 1<br>Ut!<br>t0 t1 t2<br>**----- End of picture text -----**<br> **==> picture [204 x 50] intentionally omitted <==** **----- Start of picture text -----**<br> L D.U.T.<br>1000V V *c<br>50V<br>6000µF<br> 100V<br>**----- End of picture text -----**<br> **==> picture [126 x 71] intentionally omitted <==** **----- Start of picture text -----**<br> RL = VCCICM<br>480µF<br>0 - VCC<br>**----- End of picture text -----**<br> www.irf.com 9 **==> picture [385 x 180] intentionally omitted <==** **----- Start of picture text -----**<br> 3.65 (.143) - D -<br>15.90 (.626) ioe 3.55 (.140) 5.30 (.209)<br>15.30 (.602) 0.25 (.010) M D B M 4.70 (.185)<br>cr - B - fe - A - s—_ PLL oO = 2.50 (.089)<br>1.50 (.059)<br>5.50 (.217) 4<br>) a!Cc my<br>20.30 (.800)<br>19.70 (.775) — 2X 5.50 (.217) +H: NOTES:<br>4.50 (.177) 1 DIMENSIONING & TOLERANCING<br> PER ANSI Y14.5M, 1982.<br>1 2 3 2 CONTROLLING DIMENSION : INCH.<br>3 CONFORMS TO JEDEC OUTLINE<br>! | | \ - C - : [i TO-247-AC.<br>14.80 (.583)<br>4.30 (.170)<br>14.20 (.559)<br>3.70 (.145)<br>LEAD ASSIGNMENTS<br>Hexfet IGBT<br>2.40 (.094)2.00 (.079)2X 3X 0.25 (.010)1.40 (.056)1.00 (.039) M C A S 3X2.60 (.102) [0.80 (.031)] 0.40 (.016) 1 - Gate2 - Drain3 - Source LEAD 1 - GATE2 - DRAIN3 - SOURCE ASSIG NMENTS 1 - Gate2 - Collector3 - Emitter<br>5.45 (.215) 3.40 (.133) 2.20 (.087) 4 - Drain4 - DRAIN4 - Collector<br>2X 3.00 (.118)<br>**----- End of picture text -----**<br> **==> picture [69 x 20] intentionally omitted <==** **----- Start of picture text -----**<br> Note: THE "P" in assembly line ASSEMBLYLINE "H<br>position indicates "Lead-Free"<br>**----- End of picture text -----**<br> ## Notes: Ω ≤ ≤ Data and specifications subject to change without notice. International **IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 06/2010 www.irf.com 10
Updated at February 9, 2023
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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