IRG4PC30UPBF

IGBT, 23 A, 2.52 V, 100 W, 600 V, TO-247AC, 3 Pins

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Manufacturer: INFINEON
Product type: Single IGBTs
No. of Pins: 3Pins
Power Dissipation: 100W
Transistor Mounting: Through Hole
Transistor Case Style: TO-247AC
Operating Temperature Max: 150°C
Continuous Collector Current: 23A
Collector Emitter Voltage Max: 600V
Collector Emitter Saturation Voltage: 2.52V

Delivery and price
Units per pack	1
Price	2.79 €
Current stock	10+
Lead time	30 days

Datasheet

## PD - 94923 

## INSULATED GATE BIPOLAR TRANSISTOR 

## **Features** 

## IRG4PC30UPbF UltraFast Speed IGBT 

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C<br>Vces _<br>=<br>G VcE (on) ttyp.<br>E @VceVoge = 15V, Ilo<br>n-channel<br>**----- End of picture text -----**<br>


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TO-247AC<br>**----- End of picture text -----**<br>


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θ<br>Ric<br>θ<br>**----- End of picture text -----**<br>


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## IRG4PC30UPbF 

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∆ ∆<br>erecs__| ert otc preton Vote @ 18 {| -V [Vastu =tok<br>| — [1.95 | 2.1 | Ic=12A Vor<br>SS = 15V<br>[Vcewm | — |209 | — | Io=12A,, Ty= 150°C<br>∆ ∆<br>F Veeisy Ta[Gate| TemperatureThresholdCoeff.Vottageof Threshold Votage||300— |-13| — || 0— ||mVFC| Voz=Voe,lo=250WA «|<br>=<br>foe | Forward Transconductance © [37/86 |— | S | Voz<br>— | 20 | Vo = OV, Voce = 10V, Ty = 25°C<br>|<br>[esnies| GatetoEmitierleakage Curent [=So [— [s100| [C=] nA | 100V,o=12A_—+| Voc=s0V<br>Switching Characteristics @ Ty = 25°C (unless otherwise specified)<br>| [Parameter | Min. | Typ. Max. Units| Conditions<br>[Qg | Total Gate Charge (turn-on) | — | 50 | 75 | lo = 124<br>fQg- | Gate = Collector Charge (turn-on) [— [18 [27 | | Voe=15V<br>Fay |Tumn-OnDelayTime<br>Ω<br>Seamfi [raitime—SSOS~™~SCSCSCS] S| — | 17 | — Ty=28°C<br>toss————«|<br>[En[Ese | Tum-On Switching —YS[0.16|ABO] — |_|| VoceEnergy = 15V, losses Ro include = 23  “tai<br>2 | Tum-Off Switching Loss ————*(| — [0.20|— | mi | See Fig. 10, 11, 13, 14<br>ae_[Tun-onbetyTinetr flawot sg tee f=Sef 20 f=Sw 0<br>Ω<br>[tajor) |[RiseTimeTurn-Off DelayTime || —S|| 13180 | — | VarIo = 12A,= 15V, VocRe == 480V 23<br>**----- End of picture text -----**<br>


≤ ≤ Ω 

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## IRG4PC30UPbF 

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40<br>For both: Triangular wave:<br>Duty cycle: 50%<br>T   = 125°CJ<br>T        = 90°Csink<br>30 rta ee Gate drive as specifiedPower Dissipation = 24W 3 Clamp voltage: 1“.<br>80% of rated<br>Square wave:<br>2010 AT se 60% of rated         voltageIdeal diodes Tunos FTII| T LTAENT]TINTe Eeoy<br>0<br>0.1 1 10 100<br>f, Frequency (kHz)<br>Fig. 1 - Typical Load Current vs. Frequency<br>(For square wave, |=lRms of fundamental; for triangular wave, |=Ipx)<br>100 100<br>T  = 25°CJ<br>T  = 150°CJ T  = 150°CJ<br>10 10<br>Po Ff [| L “) a<br>T  = 25°CJ<br>ee / eee PYIf7 | ot ty pt<br>1 pe 1<br>V     = 15VGE V      = 10VCC<br>0.1 fp Mbcwcrusewor) A 0.1 LEELeerssen A<br>0.1 1 10 5 6 7 8 9 10 11 12<br>V     , Collector-to-Emitter Voltage (V)CE V    , Gate-to-Emitter Voltage (V)GE<br>Load Current (A)<br>I   , Collector-to-Emitter Current (A)C I   , Collector-to-Emitter Current (A)C<br>**----- End of picture text -----**<br>


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## IRG4PC30UPbF 

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25 3.0<br>I    = 24AC<br>CS ) Pr e<br>20<br>PINES] 2.5 LL ee<br>15<br>see TTT<br>pt ENN uae<br>I    = 12AC<br>10<br>SH 2.0 LL<br>pt PN eet<br>5<br>I    = 6.0AC<br>pf [oP] NY ET<br>0 re A 1.5 il<br>25 PePEESE-EN 50 75 100 125 150 © -60 EDD -40 -20 0 20 40 60 80 100 120 140 or 160<br>T   , Case Temperature (°C)C T  , Junction Temperature (°C)J<br>Maximum DC Collector Current (A CE<br>V     , Collector-to-Emitter Voltage (V)<br>**----- End of picture text -----**<br>


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10<br>a aDeee<br>aarn ee | ell<br>1<br>ee<br>D = 0.50<br>ce e Seer: Seana<br> ee ee ea ee<br>0.20<br>a<br>0.10 See eee ae LIII EL TOTH LT P + DM<br>0.1 i rr<br>0.05 IM TTT TT | t1<br>= 0.020.01 ee       SINGLE PULSE eae |a t2<br>(THERMAL RESPONSE)<br>er al Loe ecd 1. Duty factor D =  t   / t  oes: 1 2 |<br>a eh e e<br>0.01<br>0.00001 0.0001 0.001 0.01 0.1 1 10<br>t   , Rectangular Pulse Duration (sec)1<br>thJC<br>Thermal Response (Z        )<br>**----- End of picture text -----**<br>


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## IRG4PC30UPbF 

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2000<br>V      = 0V,         f = 1MHzGE<br>C      = C     + C     ,   C     SHORTEDies         ge         gc         ce<br>C      = C<br>res         gc<br>1600 Xl | C      = C     + Coes        ce         gc<br>s<br>|<br>1200<br>ee lll<br>a ell<br>800 es<br>Nc TE<br>0<br>400 es<br>ee |<br>Se TT<br>0 a el<br>1 10 100<br>V    , Collector-to-Emitter Voltage (V)CE<br>Fig. 7 - Typical Capacitance vs.<br>Collector-to-Emitter Voltage<br>0.5<br>v= 480V<br>Me<br> ex Pf fd<br>ee<br>0.4 Pf LA<br>PL + Z|<br>ty}<br>0.3 Snap Aneeeee<br>re Vea<br>Sasa<br>0.2 ee ee A<br>0 10 20 30 40 50 60<br>R   , Gate Resistance (G Ω)<br>C, Capacitance (pF)<br>Total Switching Losses (mJ)<br>**----- End of picture text -----**<br>


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20<br>16 fof<br>Pt<br>12<br>ee ee<br>Pt A<br>8<br>ee Ae<br>Piro]<br>4<br>Py]<br>ee<br>0 yp | | |<br>0 10 20 30 40 50<br>Q  , Total Gate Charge (nC)g<br>GE<br>V     , Gate-to-Emitter Voltage (V)<br>**----- End of picture text -----**<br>


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10<br> R      = 23G   Ω Soe bs bo nena<br> V      = 15VGE ne<br> V      = 480VCC<br>pT<br>SOe Ge Geen eee<br>PCE<br>I    = 24AC<br>1 SEPLLL Ph e g e es<br>I    = 12AC<br>See eee Se eee EEeeEeee<br>I    = 6.0AC<br>FREEEEEEEHEE EE<br>PE ee pe |<br>SE GRGREDP>—aGaUnenDeen<br>0.1 TToe cneetoo tt<br>-60 -40 -20 0 20 40 60 80 100 120 140 160<br>T  , Junction Temperature (°C)J<br>Total Switching Losses (mJ)<br>**----- End of picture text -----**<br>


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## IRG4PC30UPbF 

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1.6<br>Ω<br>IR =2 Ar<br>1.2 IV = 480V a ae<br>v= 19V f<br>0.8 Po dL Cf]<br>0.4 Ae ee<br>0.0 ee ee eee<br>0 10 20 30<br>I   , Collector-to-Emitter Current (A)C<br>Total Switching Losses (mJ)<br>**----- End of picture text -----**<br>


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1000 T 20V =<br>|<br>100 a<br>[|Z ITSAFE OPERATING AREAg| |\ 1]<br>10 LALIT TTT TT<br>oy Ae) es<br>1 PA<br>Se | eeee eee<br>0.1 es ev<br>1 10 100 1000<br>V     , Collector-to-Emitter Voltage (V)CE<br>C<br>I   , Collector-to-Emitter Current (A)<br>**----- End of picture text -----**<br>


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## IRG4PC30UPbF 

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L D.U.T.<br>V  *<br>C<br>50V<br>| 1000V<br>(0)<br>* Driver same type as D.U.T.; Vc = 80% of Vce(max)<br>* Note: Due to the 50V power supply, pulse width and inductor<br>   will increase to obtain rated Id.<br>**----- End of picture text -----**<br>


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480µF<br>960V<br>**----- End of picture text -----**<br>


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IC<br>000 NN<br>L<br>Driver* D.U.T.<br>VC<br>50V<br>1000V<br>T (IE) Ci)<br>o<br>(©)<br>JV<br>90%<br>10%<br>VC<br>90%<br>SS See (ose td(off) 2 a<br>IC 5%10%<br>tr tf<br>t d(on) t=5µs<br>Eon Eoff<br>E   = (E    +E    )ts        on      off<br>**----- End of picture text -----**<br>


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## IRG4PC30UPbF 

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3.65 (.143) - D -<br>15.90 (.626) 3.55 (.140) 5.30 (.209)<br>15.30 (.602) 0.25 (.010) M D B M 4.70 (.185)<br>— - B - - A - 2.50 (.089)<br>1.50 (.059)<br>LOYVE 5.50 (.217) 4<br>pe Ee<br>20.30 (.800)19.70 (.775) | > 2X 5.50 (.217) m5 NOTES:<br>4.50 (.177) 1  DIMENSIONING & TOLERANCING<br>    PER ANSI Y14.5M, 1982.<br>1 2 3 2  CONTROLLING DIMENSION : INCH.<br>3  CONFORMS TO JEDEC OUTLINE<br>- C -      TO-247-AC.<br>14.80 (.583)<br>4.30 (.170)<br>14.20 (.559) 3.70 (.145)<br>LEAD ASSIGNMENTS<br>' io Hexfet IGBT<br>2.40 (.094)2.00 (.079) 3X 1.40 (.056)1.00 (.039) 3X [0.80 (.031)] 0.40 (.016) 1 - Gate2 - Drain LEAD 1 - GATE ASSIG NMENTS 1 - Gate2 - Collector<br>__=| 5.45 (.215)2X : 3.40 (.133)0.25 (.010) M C A S _| 2.60 (.102)2.20 (.087) OO 3 - Source4 - Drain2 - DRAIN3 - SOURCE4 - DRAIN3 - Emitter4 - Collector<br>2X 3.00 (.118)<br>TO-247AC Part Marking Information<br>EXAMPLE: THIS IS AN IRFPE30<br>WITH ASSEMBLY  PART NUMBER<br>LOT CODE 5657 INTERNATIONAL<br>ASSEMBLED ON WW 35, 2000 RECTIFIER IRFPE30<br>IN THE ASSEMBLY LINE "H" Note:   "P" in assembly line LOGO | I@R 56           57 035H DATE CODE<br>position indicates "Lead-Free" ASSEMBLY YEAR 0 =  2000<br>LOT CODE WEEK 35<br>LINE H<br>**----- End of picture text -----**<br>


Data and specifications subject to change without notice. International 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 

TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 12/03 

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Note:  For the most current drawings please refer to the IR website at: http://www.irf.com/package/

Updated at February 9, 2023

Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.

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