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IRG4PC30UDPBF
IGBT, 23 A, 2.52 V, 100 W, 600 V, TO-247AC, 3 Pins
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single IGBTs
- No. of Pins: 3Pins
- Product Range: IRG4
- Power Dissipation: 100W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-247AC
- Operating Temperature Max: 150°C
- Continuous Collector Current: 23A
- Collector Emitter Voltage Max: 600V
- Collector Emitter Saturation Voltage: 2.52V
| Delivery and price | |
|---|---|
| Units per pack | 10 |
| Price | 3.0 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## **Features** **==> picture [62 x 96] intentionally omitted <==** **----- Start of picture text -----**<br> C<br>G<br>E<br>n-channel<br>**----- End of picture text -----**<br> **==> picture [39 x 7] intentionally omitted <==** **----- Start of picture text -----**<br> TO-247AC<br>**----- End of picture text -----**<br> **==> picture [4 x 28] intentionally omitted <==** **----- Start of picture text -----**<br> θ<br>θ<br>θ<br>**----- End of picture text -----**<br> www.irf.com 1 **==> picture [423 x 351] intentionally omitted <==** **----- Start of picture text -----**<br> |||||||||||||||||||||||||||||||||| |---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---| |[Verces|∆|∆|_|||Collector-o-EmitterParameter|Breakdown|Volages||Min.600|||Typ.|||Max.|||||UnitsV_||Vee|Conditions| |[|||VcE(on)Viewed!|T||||Collector-to-Emitter|Temperature|Coe.|of|Saturation|Breakdown|Voltage|Votage||Sa----~--|[0:63|1.95|||[=|2.1||[VPC|| Vee|Ic|Io =|=|23A=12A=|OV,OV,|lc|Ic|== 1.0m250HA|See|Voe|Fig.|=|15V|2,5| |[Vee|||----||2.09|||----|||Ic|=|12A,|Ty|=|150°C| |∆|∆| |Veet|T[|Temperature|Coeff.|of|Threshold|Voltage||—|||-11 ||fnVi°C]|Vor|=|Vee,|lo|=|250uA| |fae|||Forward|Transconductance|©|||3.1.|8.6|[=||S|||Voe=|100V,|lo=|12A| |IcEs|Zero|Gate|Voltage|Collector|Current||hee----|||----|[2500|||||Voe|=|OV,|V|ocece|=|60|0V,0V|Ty|=|150°C| |F|VeM|||Diode|Gate|Threshold|Forward|Voltage|Vottage|Drop|[3.0|||--------|||[=~1.4/4.7]1.3 [60]||1.6|||Vv|||I|Voe=cc=12A =12A,VersTy==|150°C|See|Fig.|13| |IcES|Gate-to-Emitter|Leakage|Current|----|||----|[+100]|nA|||Vee|=|+20V| |Switching|Characteristics|@|Ty|=|25°C|(unless|otherwise|specified)| |[Q,|Parameter|Min.||Typ.|||Max.||Units|Conditions| |[age|_||Total|Gate|Charge|(turn-on)||---||50|||75|||Ic|=|12A| ||Qy-|||Gate|-|Emitter|Charge|(turn-on)||---||8.1|||12|||nC|||Voc=400V|See Fig. 8| |[ton|||Gate|-|Collector|Charge|(turn-on)|||----||18|||27|||Vor|=|15V| |ft| |ft|||RiseTimeTurn-OnDelayTime||---||40||---||T)=25°C| |Ω| |[tam||||)|ons|||Ie = 12, Veo = 480V| |fe|||Turn-Off|DelayTime|||||91|||140]|||Ve = 18V, Re = 23| |[Eon|||FallTime|||80|||130]|Energy|losses include|"tail" and| |[Ep[Es|||Turn-O|ffn|SwitchinSwitchin|g|L|ossoss|||--|---|||0.|3816]|----|-|-|||mJ|||diode|See|Fig.|reverse|9,|10,|recovery.|11,|18| |[ton|||Total|Switching|Loss||---||0.54]|0.9| |ft|||Turn-OnDelayTime|||~~~|||40||---||T=|150°C,|See|Fig.|9,|10,|11,|18| |Ω| |[tam|RiseTime|||||22|||||ons|||Io = 12, Veo = 480V| **----- End of picture text -----**<br> www.irf.com 2 **==> picture [436 x 198] intentionally omitted <==** **----- Start of picture text -----**<br> 20<br>Duty cycle: 50%<br>T = 125°CJ<br>T = 90°Csink<br>16 Gate drive as specified<br>oe |<br>Turn-on losses include<br>effects of reverse recovery<br>Power Dissipation = 24W<br>a 12<br>Cc a |<br>60% of rated<br> voltage<br>| 8<br>o ob ¢ NOll<br>SU L<br>Le 4 e UE ETI EAST<br>r BNUill<br>a |<br>0<br>0.1 1 10 100<br>f, Frequency (kHz)<br>**----- End of picture text -----**<br> **==> picture [433 x 198] intentionally omitted <==** **----- Start of picture text -----**<br> 100 100<br>T = 25°CJ<br>| T = 150°CJ EO T = 150°CJ g o<br>10 10<br>Pot A L m<br>T = 25°CJ<br>po F AR E<br>1 1<br>n/t |<br>V = 15VGE V = 10VCC<br>0.1 A 0.1<br>poMeaceusewon) ——— LAL gence ond<br>0.1 1 10 5 6 7 8 9 10 11 12<br>V , Collector-to-Emitter Voltage (V)CE V , Gate-to-Emitter Voltage (V)GE<br>I , Collector-to-Emitter Current (A)C I , Collector-to-Emitter Current (A)C<br>**----- End of picture text -----**<br> www.irf.com 3 **==> picture [434 x 483] intentionally omitted <==** **----- Start of picture text -----**<br> 25 3.0<br>I = 24AC<br>CEE S) bs e<br>20<br>DN eee ter saan<br>TONE 2.5 L e<br>15<br>SB Nene ATT LT<br>I = 12AC<br>10<br>es ee ee Ne 2.0 Py} [pe<br>es ee fo te<br>5 pt<br>I = 6.0AC<br>NS<br>0 SRRpp A 1.5 TT CELL soaanrh|<br>25 50 75 100 125 150 -60 -40 -20 0 20 40 60 80 100 120 140 160<br>T , Case Temperature (°C)C T , Junction Temperature (°C)J<br>Fig. 4 - Maximum Collector Current vs. Fig. 5 - Typical Collector-to-Emitter Voltage<br>Case Temperature vs. Junction Temperature<br>10<br>a ee ee ee ee el<br>1<br>ETO<br>D = 0.50<br>0.20<br>e n ee ee ee<br>0.10 ee| PDM<br>0.1<br>0.05 t<br>1<br>0.020.01 SINGLE PULSE t 2<br>(THERMAL RESPONSE)<br>wae PT TT 1. Duty factor D = t / t , 1 2<br>a a | ee ee<br>0.01<br>0.00001 0.0001 0.001 0.01 0.1 1 10<br>t , Rectangular Pulse Duration (sec)1<br>Maximum DC Collector Current (A CE<br>V , Collector-to-Emitter Voltage (V)<br>thJC<br>Thermal Response (Z )<br>**----- End of picture text -----**<br> www.irf.com 4 **==> picture [207 x 195] intentionally omitted <==** **----- Start of picture text -----**<br> 2000<br>V = 0V, f = 1MHzGE<br>C = C + C , C SHORTEDies ge gc ce<br>C = C<br>res gc<br>1600 KI | C = C + Coes ce gc<br>s<br>|<br>1200<br>eet |<br>a ell<br>800 es<br>Sse)N ~<br>es<br>400<br>ee |<br>SE ||<br>0 PENS<br>1 10 100<br>V , Collector-to-Emitter Voltage (V)CE<br>C, Capacitance (pF)<br>**----- End of picture text -----**<br> **==> picture [208 x 201] intentionally omitted <==** **----- Start of picture text -----**<br> 0.60<br>> 0.58 ff ssc | LT |Z |<br>E “TT TITY TT<br>i /<br>2 0.56<br>2 LtOo| Al |<br>a 0.54 |[At | tl)<br>i<br>0.52<br>B EAT tt<br>0.50 a) Pt<br>0 10 20 30 40 50 60<br>R , Gate Resistance (G Ω)<br>**----- End of picture text -----**<br> **==> picture [197 x 197] intentionally omitted <==** **----- Start of picture text -----**<br> 20<br>16<br>fo<br>Pt<br>12 i<br>Pt LA<br>8<br>eoA<br>4<br>pf tt<br>7 |tt<br>0 py | |<br>0 10 20 30 40 50<br>Q , Total Gate Charge (nC)g<br>GE<br>V , Gate-to-Emitter Voltage (V)<br>**----- End of picture text -----**<br> **==> picture [202 x 198] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br> R = 23G Ω<br> V = 15VGE<br> V = 480VCC<br>= PCEECEEE Pee<br>eee Oeeee<br>I = 24AC<br>e Litet ttt t<br>ys t 1 ee Te I = 12AC<br>I = 6.0AC<br>2 pee r<br>op)stg ELLEpaLL r eTiS<br>0.1 TEE<br>-60 -40 -20 0 20 40 60 80 100 120 140 160<br>T , Junction Temperature (°C)J<br>**----- End of picture text -----**<br> www.irf.com 5 **==> picture [433 x 522] intentionally omitted <==** **----- Start of picture text -----**<br> 2.0 1000<br> Ω<br>1.6<br>100<br>ee ee |<br>oO a A ee ee ee eee We<br>1.2<br>ptf fl | / too<br>2 | |f | 10 A | |<br>0.8<br>= Pe ee ee ll<br>1<br>e 0.4 f fp FARAHA<br>0.0 ee ee A 0.1 eeES ee ee ll<br>0 10 20 30 1 10 100 1000<br>I , Collector-to-Emitter Current (A)C V , Collector-to-Emitter Voltage (V)CE<br>Fig. 11 - Typical Switching Losses vs. Fig. 12 - Turn-Off SOA<br>Collector-to-Emitter Current<br>100 eeP| ee<br>P| yf | J | tf f fy Tf<br>ee | [| [ | fT | ff JT |<br>P| ft ee| ttee ee ee<br>ey,<br>Pet tg<br>P| tL A<br>T = 150°CJ<br>10 i T = 125°CJ A<br>— Al<br>|_|| | T = 25°CJ | | [fet7AP ftt| f t<br>Pt |Ap<br>aos/ seen<br>PP<br>i eenee<br>1<br>0.4 0.8 1.2 1.6 2.0 2.4<br> Forward Voltage Drop - V (V)FM<br>C<br>I , Collector-to-Emitter Current (A)<br>F<br>Instantaneous Forward Current - I (A)<br>**----- End of picture text -----**<br> www.irf.com 6 **==> picture [434 x 513] intentionally omitted <==** **----- Start of picture text -----**<br> 160 100<br>V = 200VR | V = 200VR ee ee<br>a T = 125°C eel J SEE T = 125°CJ<br>T = 25°CJ T = 25°CJ<br>_ ObpsJ pL|(as eeea a<br>120 Pt ee eee<br>I = 24AF<br>es | ee I = 24AF<br>I = 12AF<br>I = 12AF<br>80 ‘7 Ys * 10 Se ES<br>I = 6.0AF I = 6.0AF<br>ene<br>ROG | |<br>aie Sein g a oeg<br>RR BE<br>40<br>p Sens| = iS QZ | | | |<br>== Po<br>0 Ss nl ee 1<br>100 1000 100 1000<br>di /dt - (A/µs)f di /dt - (A/µs)f<br>Fig. 14- Typical Reverse Recovery vs. di;/dt Fig. 15 - Typical Recovery Current vs. dir/dt<br>600 10000<br>V = 200VR || V = 200VR PTT<br>T = 125°CJ T = 125°CJ<br>P= T = 25°CJ ||[oop T = 25°CJ P| TT<br>400 _ 1000 eeeeee<br>I = 6.0AF<br>ee Ane<br>I = 24AF<br>Wy OE<br>I = 12AF<br>I = 12AF > | we —<br>200 mae 100 G EE<br>GPa a ———<br>I = 24AF<br>I = 6.0AF Ja ( ee ns<br>a e e ee<br>0 FTTH =F 10 =f Fro<br>100 1000 100 1000<br>di /dt - (A/µs)f di /dt - (A/µs)f<br>t - (ns)rr I - (A)IRRM<br>RR<br>Q - (nC)<br>di(rec)M/dt - (A/µs)<br>**----- End of picture text -----**<br> www.irf.com 7 **==> picture [407 x 468] intentionally omitted <==** **----- Start of picture text -----**<br> 90% Vge<br>+Vge<br>Same typedevice as Vce<br>D.U.T.<br>90% Ic<br>10% Vce<br>Ic<br>Ic<br>80% 430µF 5% Ic<br>of Vce D.U.T.<br>td(off) tf<br>t1+5µS<br>Eoff = Vce ic dt<br>t1<br>Fig. 18a - Test Circuit for Measurement of fx<br>Eon: Eottidiode): ters Qrrs Irrs ta(on); tr tayote), te <—_—————_+!<br>t1 t2<br>Fig. 18b - Test Waveforms for Circuit of Fig. 18a,<br>Fost, taotry, t<br>trr<br>GATE VOLTAGE D.U.T. trr Qrr = id dt<br>Ic<br>tx<br>10% +Vg<br>+Vg<br>tx<br>10% Irr<br>10% Vcc<br>Vcc<br>DUT VOLTAGE<br>Vce<br>AND CURRENT Vpk<br>Irr<br>Vcc [[10% Ic]] 90% Ic Ipk<br>Ic<br>DIODE RECOVERY<br>WAVEFORMS<br>PANG td(on) tr 5% Vce _— peeeeceeeeeeeereereece<br>t2<br>Eon = Vce ie dt t4<br>t1 Erec = Vd id dt<br>t3<br>t1 t2 DIODE REVERSE<br>RECOVERY ENERGY<br>t3 t4<br>∫<br>∫<br>∫<br>∫<br>**----- End of picture text -----**<br> **==> picture [186 x 164] intentionally omitted <==** **----- Start of picture text -----**<br> GATE VOLTAGE D.U.T.<br>10% +Vg<br>+Vg<br>DUT VOLTAGE<br>Vce<br>AND CURRENT<br>Vcc [[10% Ic]] 90% Ic Ipk<br>Ic<br>PANG td(on) tr 5% Vce<br>t2<br>Eon = Vce ie dt<br>t1<br>t1 t2<br>∫<br>**----- End of picture text -----**<br> www.irf.com 8 **==> picture [191 x 176] intentionally omitted <==** **----- Start of picture text -----**<br> Vg GATE SIGNAL<br>DEVICE UNDER TEST<br>CURRENT D.U.T.<br>VOLTAGE IN D.U.T.<br>CURRENT IN D1<br>t0 t1 t2<br>**----- End of picture text -----**<br> Figure 18e. **==> picture [204 x 50] intentionally omitted <==** **----- Start of picture text -----**<br> L D.U.T.<br>1000V V *c<br>50V<br>6000µF<br> 100V<br>**----- End of picture text -----**<br> Figure 19. Figure 20. www.irf.com 9 ## Notes: **==> picture [10 x 7] intentionally omitted <==** **----- Start of picture text -----**<br> Ω<br>**----- End of picture text -----**<br> ≤ ≤ **==> picture [267 x 62] intentionally omitted <==** **----- Start of picture text -----**<br> EXAMPLE: THIS IS AN IRFPE30<br>WITH ASSEMBLY PART NUMBER<br>LOT CODE 5657 INTERNATIONAL poe<br>ASSEMBLED ON WW 35, 2000 RECTIFIER IRFPE30<br>IN THE ASSEMBLY LINE "H" Note: "P" in assembly line LOGO . IQR 56 57 035H DATE CODE<br>position indicates "Lead-Free" ASSEMBLY YEAR 0 = 2000<br>LOT CODE WEEK 35<br>LINE H<br>**----- End of picture text -----**<br> **IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** _Data and specifications subject to change without notice._ 06/04 www.irf.com 10 Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/
Updated at February 9, 2023
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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