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IRG4IBC30KDPBF
IGBT, N-CH, 17 A, 2.88 V, 45 W, 600 V, TO-220, 3 Pins
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single IGBTs
- No. of Pins: 3Pins
- Power Dissipation: 45W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-220
- Operating Temperature Max: 150°C
- Continuous Collector Current: 17A
- Collector Emitter Voltage Max: 600V
- Collector Emitter Saturation Voltage: 2.88V
| Delivery and price | |
|---|---|
| Units per pack | 1 |
| Price | 0.808 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## **Features** **==> picture [158 x 96] intentionally omitted <==** **----- Start of picture text -----**<br> C<br>VceEs =<br>=<br>G VcE(on) typ.<br>E @Vce = 15V,<br>n-channel<br>**----- End of picture text -----**<br> **==> picture [71 x 8] intentionally omitted <==** **----- Start of picture text -----**<br> TO-220 FULLPAK<br>**----- End of picture text -----**<br> **==> picture [432 x 65] intentionally omitted <==** **----- Start of picture text -----**<br> θ<br>Ric | Junctionto-Case-IGBT SSSC~iSC“‘(Ct STC<br>θ<br>Ros | vunctionto-Case- Diode SSSC~sSC“‘(CSSS~*dY<br>θ<br>Rus SC‘ TSSC*dYC'C<br>20007<br>we | WeightJunetion-o-Ambient, typical socket mount [|=ee<br>www.irf.com 1<br>**----- End of picture text -----**<br> **==> picture [432 x 360] intentionally omitted <==** **----- Start of picture text -----**<br> [Vieaces | Coletorto-Emiter Breakdown Votlage® | 600| — | — | V | Vce=OV,lo=250uA<br>∆ ∆<br>F Viserces Ty | Temperature Coeff. of Breakdown Votage | — [054| — | VIC | Voe=OV,Io=1.0mA<br>Vce(on) Collector-to-Emitter Saturation Voltage | — [2.21]2.7 | Ic = 16A Vee = 15V<br>|Vcecn | — [2.36] — | Ic = 16A, Ty = 150°C<br>∆ ∆<br>[Veen |Gate Threshold Voltage | 3.0 | — | 60 | | Vce=VoeIo=250HA<br>Fie Tu | Temperature Coeff of Threshold Votage [| — [12 | — |mVPC[ Voe=Voe,lo= 250A<br>feVemIces [ForwardBeenZero GateTransconductance@VoltageSessaCollector Current||27 54]— | e81]— poon]|250]—| "WsSpA | Vce=100V,lo=16Acov.vee stoops<br>ce PeeteDiode Forward Voltage Drop |}Site"— [14] 4.7] Vv bomen|[Ic=12A See"| Fig. 13<br>Switching Characteristics @ Ty = 25°C (unless otherwise specified)<br>|| Parameter | Min. | Typ. Max. | units| Conditions<br>[Q, | Total Gate Charge (turn-on) | — | 67 | 100. lc = 16A<br>Qj | Gate= Collector Charge turn-on) | — | 25 | 37 |_| Voe=18V<br>fran<br>SSS~—C—sSS<br>[taomfh ~«dRise TimeBoag Te a YT AT — | | y= 2B<br>Ω<br>ft | Turn-Off DelayTime | — | 160 | 250 | lo = 16A, Voc = 480V<br>[Eon | FalTime | = | 80 | 120 Vor = 15V, Re = 23<br>Loss|<br>[Eo | Turn-O ffn SwiSwi tch ingingloss_ | — | [ 0. 58]60 —— || ma | Ea n ergyd diode lossr e verses includerecovery "tail"<br>tsc Short Circuit Withstand Time 10 Us | Voc = 360V, Ty = 125°C<br>Ω<br>aon | Turm-On DelayTime —=S—~sC | SB] — | | T= 160°C, See Fig. 10,11,18<br>ft [RiseTime | | 2 | lc = 16A, Voc = 480V<br>Ω<br>**----- End of picture text -----**<br> www.irf.com 2 **==> picture [434 x 493] intentionally omitted <==** **----- Start of picture text -----**<br> 12 —— For both:<br>10 Duty cycle: 50%<br>T = 125°CJ<br>T = 90°Csink<br>Sn eeo™ Gate drive as specified Itt<br>8 Power Dissipation = W<br>Square wave:<br>6 e 60% of rated n MT TTT<br> voltage a lll<br>ee I Sill<br>42 r n Ideal diodes eS<br>ld Sl<br>a<br>0<br>0.1 1 10 100<br>f, Frequency (KHz)<br>Fig. 1 - Typical Load Current vs. Frequency<br>(Load Current = Ipms of fundamental)<br> 100 100<br>T = 25 CJ o<br>T = 150 CJ o<br>e y A | | ty ee T = 150 CJ o ee a eee<br> 10 Ft oe -—aeee 10 PAW |F|__|<br>2 e e<br>544<br>Pf [fo] a a 7 T = 25 CJ ee o ee<br> 1 MA | | 1 fp f<br>———— ae —————<br>ee ee ee oe ee ee<br>V = 15VGE V = 50VCC<br>20µs PULSE WIDTH 5µs PULSE WIDTH<br>0.1 1 |e| e 10 0.1 5 jf a | 10 15<br>V , Collector-to-Emitter Voltage (V)CE V , Gate-to-Emitter Voltage (V)GE<br>LOAD CURRENT (A)<br>I , Collector-to-Emitter Current (A)C I , Collector-to-Emitter Current (A)C<br>**----- End of picture text -----**<br> www.irf.com 3 **==> picture [201 x 193] intentionally omitted <==** **----- Start of picture text -----**<br> 4.0<br>V = 15VGEGE<br>80 us PULSE WIDTH I = ACC 32<br>anon<br>BUDE<br>3.0<br>a oe<br>ert | tt EE I = ACC ELE 16<br>tet ety dt<br>2.0 I = CC<br>ee e<br>Dees ou Gn ou Gn Gn ue On neem On neem neem ee oe<br>1.0 PEE EEEEE E ETEEEE E UEE<br>-60 -40 -20 0 20 40 60 80 100 120 140 160<br>)<br>CE<br>V , Collector-to-Emitter Voltage(V)<br>**----- End of picture text -----**<br> **==> picture [434 x 478] intentionally omitted <==** **----- Start of picture text -----**<br> 20 V = 15VGEGE<br>80 us PULSE WIDTH I = ACC 32<br>Pitt TE anon<br>15 St EE BUDE<br>3.0<br>PSO TT a oe<br>10 PNY ert | tt EE I = ACC ELE 16<br>TPS tet ety dt<br>2.0 I = CC<br>Pet WN ee e<br>5<br>PEt EE PN Dees ou Gn ou Gn Gn ue On neem On neem neem ee oe<br>0 PEEL TLTEENELEN 1.0 PEE EEEEE E ETEEEE E UEE<br>-60 -40 -20 0 20 40 60 80 100 120 140<br>25 50 75 100 125 150<br>° )<br>T , Case Temperature ( C)C<br>Fig. 4 - Maximum Collector Current vs. Case Fig. 5 - Typical Collector-to-Emitter Voltage<br>Temperature vs. Junction Temperature<br> 10<br>a D = 0.50 | ee |<br> 1 E T orm<br>0.20<br>0.10<br>A rn<br>0.05<br>ee a PDM<br>0.1 0.02<br>C ee CCN CL t1<br>0.01<br>t2<br>SINGLE PULSE<br>(THERMAL RESPONSE) Notes:<br>ie ee<br>La 1 ee 1. Duty factor D = t / t1 2<br>a 2. Peak TJ = PDM x Z thJC + TC<br>0.01<br>0.00001 0.0001 0.001 0.01 0.1 1 10<br>t , Rectangular Pulse Duration (sec)1<br>CE<br>Maximum DC Collector Current(A) V , Collector-to-Emitter Voltage(V)<br>thJC<br>Thermal Response (Z )<br>**----- End of picture text -----**<br> www.irf.com 4 **==> picture [436 x 481] intentionally omitted <==** **----- Start of picture text -----**<br> 1500 VGE = 0V, f = 1MHz 20 VCC = 400V<br>Cies = Cge + Cgc , C SHORTEDce I C = 16A<br>Cres = Cgc<br>1200 Waa Coes = Cce + Cgc 16 E P<br>REel<br>900 SSNe Cies 12 o e|<br>a ee | | | | | Et<br>| ell Pit| de<br>600 TT 8 Pfft<br>PNET ee ed<br>300 Ke Coes 4 | tt tt<br>DOE Cres geSl f/|yt tt| | |tt| |tt<br>0 e e lll 0 P| t | | | dt |<br> 1 10 100 0 20 40 60 80<br>V , Collector-to-Emitter Voltage (V)CE Q , Total Gate Charge (nC)G<br>Fig. 7 - Typical Capacitance vs. Fig. 8 - Typical Gate Charge vs.<br>Collector-to-Emitter Voltage Gate-to-Emitter Voltage<br>1.50 10<br>V = 480VCC R = G Ω m<br>V = 15VT = 25 CJGE ° V = 15VV = 480VGECC I = AC 32<br>1.40 I = 16AC PtrT TT]tt THTey tt pe<br>I = AC 16<br>cope PPP<br>1.30<br>L L<br> 1<br>I = C<br>1.20 Pt | pee eGR G0 G8 >> -- onOe<br>1.10 aaLT |ry |ry aa foeoeee ee<br>PEEP} SOUREREGBeeeeeeeeeeee<br>1.00 PE tT tT tt 0.1 LEE EEE<br>0 10 20 30 40 50 -60 -40 -20 0 20 40 60 80 100 120 140 160<br>R Ω ) hm) T , Junction Temperature ( C )J °<br>C, Capacitance (pF)<br>GE<br>V , Gate-to-Emitter Voltage (V)<br>Total Switching Losses (mJ) Total Switching Losses (mJ)<br>**----- End of picture text -----**<br> www.irf.com 5 **==> picture [434 x 192] intentionally omitted <==** **----- Start of picture text -----**<br> 5.0 R =G Ω m 100 V = 20VGE<br>T = 150 CJ ° T = 125 CJ o<br>V = 480VCC<br>4.0 V = 15VGE<br>| ee Seri eri ema<br>a oe Ei|<br>3.0<br>A Oy 10<br>2.0<br>/ |||<br>1.0<br>oe 4eeSe al<br>PT YViE Tt tt tt et<br>SAFE OPERATING AREA<br>0.0 COPE 1 pe l<br>0 8 16 24 32 40 1 10 100 1000<br>I , Collector-to-emitter Current (A)C V , Collector-to-Emitter Voltage (V)CE<br>C<br>Total Switching Losses (mJ) I , Collector Current (A)<br>**----- End of picture text -----**<br> **==> picture [175 x 284] intentionally omitted <==** **----- Start of picture text -----**<br> 100 oe oe<br>ee ee ee ee eee<br>a ee ee ee ee<br>Pot<br>Pitithh hudT ULL<br>pottT | ge<br>nae’ T = 150°CJ Aa",<br>10 T = 125°CJ<br>FP Al<br>= T = 25°CJ 2<br>p | | | TA<br>PotTT<br>faiP| |ET(ania<br>EL<br>1<br>0.4 0.8 1.2 1.6 2.0 2.4<br> Forward Voltage Drop - V (V)FM<br>F<br>Instantaneous Forward Current - I (A)<br>**----- End of picture text -----**<br> www.irf.com 6 **==> picture [438 x 543] intentionally omitted <==** **----- Start of picture text -----**<br> TOR Rectifier<br>160 100<br>V = 200VR | V = 200VR re<br>a T = 125°C een J SF T = 125°CJ LEE<br>T = 25°CJ T = 25°CJ<br>Obps i| = FEEes a<br>120<br>a | | | |J e se e eee<br>I = 24AF<br>SD TTT es I = 24AF<br>I = 12AF<br>80 ‘s “Ss >* 10 I = 12AF Sx Zo<br>P90 I = 6.0AF a I = 6.0AF e<br>ROG | e e eee<br>inn OSS Le aan<br>RR BE<br>40<br>ee | an<br>_.-: FP<br>0 1<br>Ss | ee<br>100 1000 100 1000<br>di /dt - (A/µs)f di /dt - (A/µs)f<br>Fig. 14 - Typical Reverse Recovery vs. di;/dt Fig. 15 - Typical Recovery Current vs. dir/dt<br>600 || 10000 pe<br>V = 200VR J V = 200VR pe]<br>T = 125°CJ | T = 125°CJ Pp|<br>T = 25°CJ _ |ee T = 25°CJ ee P|<br>400 1000<br>I = 6.0AF<br>ee4° Ane<br>| eeen a ae<br>| p e ?<br>4 I = 24AF PS eB<br>I = 12AF<br>I = 12AF ” OE<br>200 oes 100 o e<br>I = 24AF<br>I = 6.0AF a] a n ne<br>ae — es<br>0 Seti 10 ee§=ERRRH Snes<br>100 1000 100 1000<br>di /dt - (A/µs)f di /dt - (A/µs)f<br>t - (ns)rr I - (A)IRRM<br>RR<br>Q - (nC)<br>di(rec)M/dt - (A/µs)<br>**----- End of picture text -----**<br> www.irf.com 7 **==> picture [146 x 71] intentionally omitted <==** **----- Start of picture text -----**<br> Same type<br>device as<br>D.U.T.<br>80% 430µF<br>of Vce D.U.T.<br>**----- End of picture text -----**<br> **==> picture [187 x 164] intentionally omitted <==** **----- Start of picture text -----**<br> GATE VOLTAGE D.U.T.<br>10% +Vg<br>+Vg<br>DUT VOLTAGE<br>Vce<br>AND CURRENT<br>Vcc [10% Ic] 90% Ic Ipk<br>Ic<br>PAN td(on) tr 5% Vce G<br>t2<br>Eon =<br>t1<br>t1 t2<br>**----- End of picture text -----**<br> **==> picture [186 x 194] intentionally omitted <==** **----- Start of picture text -----**<br> 90% Vge<br>+Vge<br>Vce<br>90% Ic<br>10% Vce<br>Ic<br>Ic<br>5% Ic<br>td(off) tf<br>t1+5µS<br>Eoff =<br>t1<br>t1 t2<br>**----- End of picture text -----**<br> **==> picture [179 x 193] intentionally omitted <==** **----- Start of picture text -----**<br> trr<br>trr<br>Ic — —! Qrr = t<br>tx<br>tx<br>10% Irr<br>10% Vcc<br>Vcc<br>Vpk<br>Irr<br>DIODE RECOVERY<br>WAVEFORMS<br>a eveeecenncsseeeernnnesstecen<br>t4<br>Erec =<br>t3<br>DIODE REVERSE<br>RECOVERY ENERGY<br>\ dt<br>t3 t4<br>∫<br>**----- End of picture text -----**<br> www.irf.com 8 **==> picture [191 x 176] intentionally omitted <==** **----- Start of picture text -----**<br> Vg GATE SIGNAL<br>DEVICE UNDER TEST<br>CURRENT D.U.T.<br>VOLTAGE IN D.U.T.<br>CURRENT IN D1<br>t0 t1 t2<br>**----- End of picture text -----**<br> Figure 18e. Macro Waveforms for Figure 18a's Test Circuit **==> picture [204 x 50] intentionally omitted <==** **----- Start of picture text -----**<br> L D.U.T.<br>1000V V *c<br>50V<br>6000µF<br> 100V<br>**----- End of picture text -----**<br> **==> picture [127 x 72] intentionally omitted <==** **----- Start of picture text -----**<br> RL = VCCICM<br>480µF<br>0 - VCC<br>**----- End of picture text -----**<br> Figure 19. Clamped Inductive Load Test Circuit Figure 20. Pulsed Collector Current Test Circuit www.irf.com 9 ## TO-220AB Full-Pak Package Outline Dimensions are shown in millimeters (inches) ## TO-220AB Full-Pak Part Marking Information TO-220AB Full-Pak package is not recommended for Surface Mount Application. VoE=Z20V, L=10UH, Re= 23 Ω ≤ ≤ Data and specifications subject to change without notice. **IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 06/2010 www.irf.com 10
Updated at February 9, 2023
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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