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IRG4IBC20KDPBF
IGBT, N-CH, 11.5 A, 3.01 V, 34 W, 600 V, TO-220FP, 3 Pins
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single IGBTs
- No. of Pins: 3Pins
- Power Dissipation: 34W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-220FP
- Operating Temperature Max: 150°C
- Continuous Collector Current: 11.5A
- Collector Emitter Voltage Max: 600V
- Collector Emitter Saturation Voltage: 3.01V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 1.14 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## **Features** **==> picture [158 x 96] intentionally omitted <==** **----- Start of picture text -----**<br> C<br>VcES =<br>=<br>G VcE(on) typ.<br>E @Vee = 15V,<br>n-channel<br>**----- End of picture text -----**<br> **==> picture [71 x 7] intentionally omitted <==** **----- Start of picture text -----**<br> TO-220 FULLPAK<br>**----- End of picture text -----**<br> **==> picture [396 x 66] intentionally omitted <==** **----- Start of picture text -----**<br> θ<br>Ric | Junolionto-Gase-IGBT SSSCSC~C~—SCSC‘“‘—SS™SC*YSCOC*C‘C<br>θ |vunctionto-Case-Diode—SSSC~sSC“‘(C~SS~C*dY<br>Ros TC?<br>θ<br>Rua SC‘<br>20007)<br>we | Weightunetion-to-Ambient, typical socket mount [| — | 5<br>www.irf.com<br>**----- End of picture text -----**<br> 1 **==> picture [433 x 360] intentionally omitted <==** **----- Start of picture text -----**<br> [Visaces | Coletorto-Emiter Breakdown Votlage® | 600| — | — | V | Voe=OV,lo=250A<br>∆ ∆<br>F Viserces Ty | Temperature Coeff. of Breakdown Votage | — [0.40| — | VC | Voe=OV,Io=1.0mA<br>iVce(on) Collector-to-Emitter Saturation Voltage | — S [2.27]2.8 | Ic = 9.0A Vee = 15V<br>|Vcen | — [243]2— | 06 Ic = 9.0A, Ty = 150°C<br>∆ ∆<br>F Veen) Tu|| GateTemperature ThresholdCoeff Voltageof Threshold Votage|[| 3.0— | —[10 || 6.0 — ||mVPC[ Voe=Voe,lo= 250A<br>Fie [Forward Transconductance@ | 28 43[ — | S | Vce=100V,lo=90A<br>BeeIces Zero Gate VoltageSessaCollector Current |7S— | — from]|250] pA sov.veestooy=r60e—Ws<br>SeVem PatinaDiode Forward Voltage Drop |}Site] — [14] 14.7] V |beeenIc=8.0A neme See"|Fig. 13<br>Switching Characteristics @ Ty = 25°C (unless otherwise specified)<br>|| Parameter | Min. | Typ. Max. | units| Conditions<br>[Q, | Total Gate Charge (turn-on) | — | 34 | 51 | Ic = 9.0A<br>Qj | Gate= Collector Charge turn-on) | — [14] 21 |_| Voe=t8V<br>fran<br>—S«*dRiseTime—SS~—SsSS<br>fh Boag Tne ae<br>[taom MT |] | Ty DBC<br>Ω<br>ft | Turn-Off DelayTime | — ‘| 180 | 270 | lc = 9.0A, Veo = 480V<br>[Eon | FalTime | = | 72 | 110 Vor = 15V, Re = 50<br>Loss|<br>[Eo | Turn-O ffn SwiSwi tchi ngngloss_ | — |[ 0.3 4]0] —— || ma | aE n dergydiode lossr e verses includerecovery "tail"<br>tsc Short Circuit Withstand Time 10 Us | Voc = 360V, Ty = 125°C<br>Ω<br>aon | Tur-On DelayTime —=S~idY ‘(| 7 | — | | T= 180°C, Seo Fig. 10,11,14<br>ft [RiseTime | SH | 87 | Ic = 9.0, Voc = 480V<br>Ω<br>**----- End of picture text -----**<br> www.irf.com 2 **==> picture [435 x 524] intentionally omitted <==** **----- Start of picture text -----**<br> TER Rectifier<br>8<br>For both:<br>7<br>e e Duty cycle: 50%<br>T = 125°CJ<br>6 T = 90°Csink<br>ee Gate drive as specified ll<br>Power Dissipation = it W<br>5<br>Square wave:<br>4 60% of rated<br>| voltage ee Nl<br>3 I<br>Pp] al Bene LLPNS<br>2<br>f ETT PNET<br>Ideal diodes<br>1 PAT NY<br>E T<br>0 p b OUTET<br>0.1 1 10 100<br>f, Frequency (KHz)<br>Fig. 1 - Typical Load Current vs. Frequency<br>(Load Current = Ipms of fundamental)<br> 100 ——— 100 ———<br>ee ee ee oe ee ee eeee<br>a a es ee ee ee ee<br>po T = 25 CJ o a ee ee ee ee<br>a nna T = 150 CJ o eeea<br> 10 10<br>Agee e e T = 150 CJ eee o Ae<br>——_—, aaa SS SS<br>ee,aye Ae eeee ee eee esaeey2 2 eeoeeeee eeee<br>T = 25 CJ o<br>| /Ae eee ( an pT<br>V = 15VGE V = 50VCC<br> 1 fF | | 20µs PULSE WIDTH Tt 1 wil 5µs PULSE WIDTH | [|]<br> 1 10 5 10 15 20<br>V , Collector-to-Emitter Voltage (V)CE V , Gate-to-Emitter Voltage (V)GE<br>LOAD CURRENT (A)<br>C C<br>I , Collector-to-Emitter Current (A) I , Collector-to-Emitter Current (A)<br>**----- End of picture text -----**<br> www.irf.com 3 **==> picture [433 x 467] intentionally omitted <==** **----- Start of picture text -----**<br> 12 5.0<br>V = 15VGE<br>80 us PULSE WIDTH<br>ttt tty tt Fe e<br>10<br>pi | ft | tt} tt Bn 08 0S On 0<br>I = AC 18<br>4.0<br>Tt |<br>8<br>PASEEEEEES) 0 FRE ER<br>rT=rTToT 8 ee Peoe<br>6 3.0<br>Se EB ~SSEESN GEeemeecaaadaae-T | = ee<br>I = C<br>4 CEE CSE S e<br>Ny |_| —+—7<br>P| tt} tT tT de dT NE 2.0 a e 7 I = AC Ty 4.5<br>PtETTTTN Oe<br>2 SS SS See Oe Ge OO OO<br>0 pt | | Te TN 1.0 OS G08 Ge<br>25 50 75 100 125 150 -60 -40 -20 0 20 40 60 80 100 120 140 160<br>T , Case Temperature ( C)C ° T , Junction Temperature ( C)J °<br>Fig. 4 - Maximum Collector Current vs. Case Fig. 5 - Typical Collector-to-Emitter Voltage<br>Temperature vs. Junction Temperature<br> 10<br>D = 0.50<br>a a ST Tt] a | eco<br> 1 0.20 OU ee a | |<br>a 0.100.05 ec | |<br>— eer LP Pb PDM<br>0.02<br>0.1<br>so 0.01 t cal | t1<br>SINGLE PULSE<br>ane (THERMAL RESPONSE) A t2<br>Notes:<br>1. Duty factor D = t / t1 2<br>Cec ConnCo 2. Peak TJ = PDM x Z thJC + TC<br>0.01<br>0.00001 0.0001 0.001 0.01 0.1 1 10<br>t , Rectangular Pulse Duration (sec)1<br>Maximum DC Collector Current(A) CE<br>V , Collector-to-Emitter Voltage(V)<br>thJC<br>Thermal Response (Z )<br>**----- End of picture text -----**<br> www.irf.com 4 **==> picture [441 x 470] intentionally omitted <==** **----- Start of picture text -----**<br> 800 VGE = 0V, f = 1MHz 20 VCC = 400V<br>CCiesres == CCgegc + Cgc , C SHORTEDce I C = 9.0A<br>a Coes = Cce + Cgc 16 P TT<br>\t Cer<br>600<br>| Cies RE ee 12 e e<br>ef ee a<br>400<br>Nit eel ee<br>ATE TT 8 7ne<br>200 VN PAR f op foft<br>Coes 4<br>S NN Sss ARR+ +<br>Cres<br>0 Po — CTH III 0 a<br> 1 10 100 0 10 20 30 40<br>V , Collector-to-Emitter Voltage (V)CE Q , Total Gate Charge (nC)G<br>Fig. 7 - Typical Capacitance vs. Fig. 8 - Typical Gate Charge vs.<br>Collector-to-Emitter Voltage Gate-to-Emitter Voltage<br>0.8 10<br>V = 480VCC R G Ω hm<br>V = 15VT = 25 CI = 9.0AJCGE ° Oe ee V = 15VV = 480VGECC ne eeee<br>I = AC 18<br>Ssaaeeee Gn Re Gn Ge PietPEEPOn RO PE<br>0.7<br>TT 1 jf | tt I = C<br>0.6 |)aa |)vy= |P|tTLL teem|P| |P|TT| itt Bu6OG e au Oeuu ous8 0 eBeOW GTeeCSo I = AC ED eee tT. 4.5<br>PAPA} EEE<br>0.5 0.1<br>0 10 20 30 40 50 -60 -40 -20 0 20 40 60 80 100 120 140 160<br>(Ohm) Ω ) T , Junction Temperature ( C )J °<br>C, Capacitance (pF)<br>GE<br>V , Gate-to-Emitter Voltage (V)<br>Total Switching Losses (mJ) Total Switching Losses (mJ)<br>**----- End of picture text -----**<br> www.irf.com 5 **==> picture [193 x 188] intentionally omitted <==** **----- Start of picture text -----**<br> 3.0<br>R =G Ω m<br>T = 150 CJ °<br>V = 480VCC<br>V = 15VGE<br>Wa/<br>aan ae<br>2.0<br>7 A<br>1.0 EEA/ [|]<br>W<br>P| |ap“aP| |a<br>0.0 RAE<br>0 4 8 12 16 20<br>I , Collector-to-emitter Current (A)C<br>Total Switching Losses (mJ)<br>**----- End of picture text -----**<br> **==> picture [199 x 189] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>V = 20VGE<br>T = 125 CJ o<br>a<br>ee p ep||<br>| | anryep———5 ||<br> 10 CAAT<br>Eeee) A ee EI<br>ay||<br>| |<br>SAFE OPERATING AREA<br>AMIN A<br> 1<br> 1 10 100 1000<br>V , Collector-to-Emitter Voltage (V)CE<br>C<br>I , Collector Current (A)<br>**----- End of picture text -----**<br> **==> picture [175 x 285] intentionally omitted <==** **----- Start of picture text -----**<br> 100 a a oe oe le<br>oe oei<br>a<br>Pt ft | tt tt | | Pe<br>pif it it te<br>PottAr<br>TALL<br>10<br>a 7 A<br>a) ae<br>re e/a<br>mm/s if Tf<br>T = 150°CJ<br>BEERS |<br>T = 125°CJ<br>v/a T = 25°CJ ona<br>1<br>ee 2) ee ee ee ee eee<br>ee oe oe<br>eS ee ee<br>Be Pee<br>BP Ree eee<br>0.1<br>0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2<br> Forward Voltage Drop - V (V)FM<br>F<br>Instantaneous Forward Current - I (A)<br>**----- End of picture text -----**<br> www.irf.com 6 **==> picture [433 x 514] intentionally omitted <==** **----- Start of picture text -----**<br> 100 100<br>V = 200VR V = 200VR<br>[LLL T = 125°CJ en T = 125°CJ<br>T = 25°CJ T = 25°CJ<br>80<br>Sn ae aee<br>I = 16AF<br>60<br>I = 8.0AF<br>I = 16AF<br>= 10 e<br>Seca e e l<br>I = 8.0AF<br>40<br>poe tt ge e<br>I = 4.0AF<br>pss em aan<br>I = 4.0AF<br>20<br>ets, e ee<br>es e e<br>0 es 1 Ft LLL<br>100 1000 100 1000<br>di /dt - (A/µs)f di /dt - (A/µs)f<br>Fig. 14 - Typical Reverse Recovery vs. di;/dt Fig. 15 - Typical Recovery Current vs. dir/dt<br>500 10000<br>V = 200VR V = 200VR<br>LLL T = 125°CJ SS T = 125°CJ<br>T = 25°CJ T = 25°CJ<br>400 Loz} | a eee<br>1 LRT tr<br>Ce<br>300<br>I = 16A F FTL 1000 Tf I = 4.0AF<br>I = 8.0AF<br>Z| ae<br>200<br>I = 16AF<br>I = 8.0AF<br>EDoE | OG<br>100<br>| |<br>[yl I F = 4.0A<br>ee"<br>—— O [A] lllF<br>0 Se 100 aa<br>100 1000 100 1000<br>di /dt - (A/µs)f di /dt - (A/µs)f<br>t - (ns)rr I - (A)IRRM<br>RR<br>Q - (nC)<br>di(rec)M/dt - (A/µs)<br>**----- End of picture text -----**<br> www.irf.com 7 **==> picture [146 x 71] intentionally omitted <==** **----- Start of picture text -----**<br> Same type<br>device as<br>D.U.T.<br>80% 430µF<br>of Vce D.U.T.<br>**----- End of picture text -----**<br> **==> picture [187 x 164] intentionally omitted <==** **----- Start of picture text -----**<br> GATE VOLTAGE D.U.T.<br>10% +Vg<br>+Vg<br>DUT VOLTAGE<br>Vce<br>AND CURRENT<br>Vcc [10% Ic] 90% Ic Ipk<br>Ic<br>PAN td(on) tr 5% Vce G<br>t2<br>Eon =<br>t1<br>t1 t2<br>**----- End of picture text -----**<br> **==> picture [186 x 194] intentionally omitted <==** **----- Start of picture text -----**<br> 90% Vge<br>+Vge<br>Vce<br>90% Ic<br>10% Vce<br>Ic<br>Ic<br>5% Ic<br>td(off) tf<br>t1+5µS<br>Eoff =<br>t1<br>t1 t2<br>**----- End of picture text -----**<br> **==> picture [179 x 193] intentionally omitted <==** **----- Start of picture text -----**<br> trr<br>trr<br>Ic — —! Qrr = t<br>tx<br>tx<br>10% Irr<br>10% Vcc<br>Vcc<br>Vpk<br>Irr<br>DIODE RECOVERY<br>WAVEFORMS<br>a eveeecenncsseeeernnnesstecen<br>t4<br>Erec =<br>t3<br>DIODE REVERSE<br>RECOVERY ENERGY<br>\ dt<br>t3 t4<br>∫<br>**----- End of picture text -----**<br> www.irf.com 8 **==> picture [191 x 176] intentionally omitted <==** **----- Start of picture text -----**<br> Vg GATE SIGNAL<br>DEVICE UNDER TEST<br>CURRENT D.U.T.<br>VOLTAGE IN D.U.T.<br>CURRENT IN D1<br>t0 t1 t2<br>**----- End of picture text -----**<br> Figure 18e. Macro Waveforms for Figure 18a's Test Circuit **==> picture [367 x 81] intentionally omitted <==** **----- Start of picture text -----**<br> RL = VCCICM<br>L D.U.T.<br>1000V V *c<br>50V 480µF<br>0 - VCC<br>6000µF<br> 100V<br>**----- End of picture text -----**<br> Figure 19. Clamped Inductive Load Test Circuit Figure 20. Pulsed Collector Current Test Circuit www.irf.com 9 ## TO-220AB Full-Pak Package Outline Dimensions are shown in millimeters (inches) ## TO-220AB Full-Pak Part Marking Information TO-220AB Full-Pak package is not recommended for Surface Mount Application. ## Notes: - Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature - (figure 20) VCC=80%(VCES), VGE=20V, L=10µH, RG= 50 Ω (figure 19) Pulse width ≤ 80µs; duty factor ≤ 0.1%. Pulse width 5.0µs, single shot. Data and specifications subject to change without notice. **IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 01/2010 www.irf.com 10
Updated at February 9, 2023
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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