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IRG4BH20K-SPBF
IGBT, 11 A, 3.17 V, 60 W, 1.2 kV, TO-263 (D2PAK), 3 Pins
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single IGBTs
- No. of Pins: 3Pins
- Product Range: IRG4
- Power Dissipation: 60W
- Transistor Mounting: Surface Mount
- Transistor Case Style: TO-263 (D2PAK)
- Operating Temperature Max: 150°C
- Continuous Collector Current: 11A
- Collector Emitter Voltage Max: 1.2kV
- Collector Emitter Saturation Voltage: 3.17V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 1.0 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
PD-95891A ## IRG4BH20K-SPbF ## Short Circuit Rated UltraFast IGBT ## INSULATED GATE BIPOLAR TRANSISTOR ## **Features** **==> picture [193 x 97] intentionally omitted <==** **----- Start of picture text -----**<br> ||| |---|---| |C| |VCES = 1200V| |V|= 3.17V| |G|CE(on) typ.| |E|@VGE = 15V, IC = 5.0A| |n-channel| **----- End of picture text -----**<br> - High short circuit rating optimized for motor control, tsc =10µs @ VCC = 720V , TJ = 125°C, VGE = 15V - Combines low conduction losses with high switching speed - Latest generation design provides tighter parameter distribution and higher efficiency than previous generations - Industry standard D[2] Pak package - Lead-Free ## **Benefits** - As a Freewheeling Diode we recommend our HEXFRED[TM] ultrafast, ultrasoft recovery diodes for minimum EMI / Noise and switching losses in the Diode and IGBT - Latest generation 4 IGBT's offer highest power density motor controls possible D[2] Pak ## **Absolute Maximum Ratings** **==> picture [432 x 148] intentionally omitted <==** **----- Start of picture text -----**<br> ||||||| |---|---|---|---|---|---| |Parameter|Max.|Units| |a|VCES|Collector-to-Emitter Voltage|1200|V| |IC @ TC = 25°C|Continuous Collector Current|11| |IC @ TC = 100°C|Continuous Collector Current|5.0| |ee| |ICM|Pulsed Collector Current|22|A| |es|ILM|Clamped Inductive Load Current|I|22| |tsc|Short Circuit Withstand Time|10|µs| |es| |neee|VGE|QO|Gate-to-Emitter Voltage|±20|V| |EARV|Reverse Voltage Avalanche Energy|130|mJ| |—-|PD @ TC = 25°C|Maximum Power Dissipation|#1!"|777777|60| |eee|PD @ TC = 100°C|Maximum Power Dissipation|24| |TJ|Operating Junction and|-55 to +150| |a|TSTG|Storage Temperature Range|°C| **----- End of picture text -----**<br> ## **Thermal Resistance** **==> picture [439 x 83] intentionally omitted <==** **----- Start of picture text -----**<br> |||||||| |---|---|---|---|---|---|---| |Parameter|Typ.|Max.|Units| |R|θ|JC|Junction-to-Case|–––|2.1| |R|θ|CS|Case-to-Sink, Flat, Greased Surface|0.24|–––|°C/W| |R|θ|JA|Junction-to-Ambient, typical socket mount|–––|40| |Wt|Weight|6 (0.21)|–––|g (oz)| |www.irf.com|1| |01/21/2010| **----- End of picture text -----**<br> ## **IRG4BH20K-SPbF** ## **Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** |**Parameter**<br>**Min. Typ. Max. Units**<br>**Conditions**<br>V(BR)CES<br>Collector-to-Emitter Breakdown Voltage<br>1200<br>—<br>—<br>V<br>VGE= 0V, IC= 250µA<br>V(BR)ECS<br>Emitter-to-Collector Breakdown Voltage<br>18<br>—<br>—<br>V<br>VGE= 0V, IC= 1.0A<br>∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage<br>—<br>1.13<br>—<br>V/°C<br>VGE= 0V, IC= 2.5mA<br>—<br>3.17<br>4.3<br>IC= 5.0A VGE= 15V<br>VCE(ON)<br>Collector-to-Emitter Saturation Voltage<br>—<br>4.04<br>—<br>IC= 11A<br>See Fig.2, 5<br>—<br>2.84<br>—<br>IC= 5.0A , TJ= 150°C<br>VGE(th)<br>Gate Threshold Voltage<br>3.5<br>—<br>6.5<br>VCE= VGE, IC= 250µA<br>∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage<br>—<br>-10<br>—<br>mV/°C VCE= VGE, IC= 1mA<br>gfe<br>Forward Transconductance<br>2.3<br>3.5<br>—<br>S<br>VCE= 100 V, IC= 5.0A<br>—<br>—<br>250<br>VGE= 0V, VCE= 1200V<br>—<br>—<br>2.0<br>VGE= 0V, VCE= 10V, TJ= 25°C<br>—<br>—<br>1000<br>VGE= 0V, VCE= 1200V, TJ= 150°C<br>IGES<br>Gate-to-Emitter Leakage Current<br>—<br>—<br>±100<br>nA<br>VGE= ±20V<br>ICES<br>Zero Gate Voltage Collector Current<br>Oe<br>Oe<br>en<br>Se<br>ee<br>ie i ee<br>a<br>||<br>|ot<br>|<br>ly<br>—<br>ET<br>~~Po~~<br>~~Po~~<br>~~esGO~~<br>~~== .———~~<br>~~FT Po~~<br>~~a~~| |---| |**Switching Characteristics @ TJ = 25°C (unless otherwise specified)**| |**Parameter**<br>**Min. Typ. Max. Units**<br>**Conditions**<br>~~a~~| |Qg<br>Total Gate Charge (turn-on)<br>—<br>28<br>43<br>IC= 5.0A<br>~~a~~<br>ee| |Qge<br>Gate - Emitter Charge (turn-on)<br>—<br>4.4<br>6.6<br>nC<br>VCC= 400V<br>See Fig.8<br>a| |Qgc<br>Gate - Collector Charge(turn-on)<br>—<br>12<br>18<br>VGE= 15V<br>aee| |td(on)<br>Turn-On Delay Time<br>—<br>23<br>—<br>~~a~~| |tr<br>Rise Time<br>—<br>26<br>—<br>TJ= 25°C<br>a| |td(off)<br>Turn-Off Delay Time<br>—<br>93<br>140<br>IC=5.0A, VCC= 960V<br>a| |tf<br>Fall Time<br>—<br>270<br>400<br>VGE= 15V, RG= 50Ω<br>a| |Eon<br>Turn-On Switching Loss<br>—<br>0.45<br>—<br>Energy losses include "tail"<br>a| |Eoff<br>Turn-Off Switching Loss<br>—<br>0.44<br>—<br>mJ<br>See Fig. 9,10,14<br>a| |Ets<br>Total Switching Loss<br>—<br>0.89<br>1.2| |tsc<br>Short Circuit Withstand Time<br>10<br>—<br>—<br>µs<br>VCC= 720V, TJ= 125°C| |VGE= 15V, RG= 50Ω| |td(on)<br>Turn-On Delay Time<br>—<br>23<br>—<br>TJ= 150°C,<br>a| |tr<br>Rise Time<br>—<br>28<br>—<br>IC= 5.0A, VCC= 960V<br>aa| |td(off)<br>Turn-Off Delay Time<br>—<br>100<br>—<br>VGE= 15V, RG= 50Ω<br>Pt| |tf<br>Fall Time<br>—<br>620<br>—<br>Energy losses include "tail"<br>aee| |Ets<br>Total Switching Loss<br>—<br>1.7<br>—<br>mJ<br>See Fig. 10,11,14<br>a| |LE<br>Internal Emitter Inductance<br>—<br>7.5<br>—<br>nH<br>Between lead and center of die contact<br>a| |Cies<br>Input Capacitance<br>—<br>435<br>—<br>VGE= 0V<br>a<br>ee| |Coes<br>Output Capacitance<br>—<br>44<br>—<br>pF<br>VCC= 30V<br>See Fig. 7<br>Ge| |Cres<br>Reverse Transfer Capacitance<br>—<br>8.3<br>—<br>ƒ = 1.0MHz| Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. ( See fig. 13b ) VCC = 80%(VCES), VGE = 20V, L = 10µH, RG =50 Ω (See fig. 13a) Repetitive rating; pulse width limited by maximum junction temperature. ≤ ≤ Pulse width 5.0µs, single shot. - When mounted on 1" square PCB (FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. www.irf.com 2 ## **IRG4BH20K-SPbF** **==> picture [412 x 177] intentionally omitted <==** **----- Start of picture text -----**<br> For both: Triangular wave:<br>Duty cycle: 50%<br>* —S ST T = 125˚ CJ a rae<br>T = 90˚ C<br>sink<br>TK Gate drive as specified<br>_ | (Tr Power Dissipation = 15W a Clamp voltage:<br>80% of rated<br>Square wave:<br>| 60% of rated eee<br> voltage<br>; a Ideal diodes ieee<br>**----- End of picture text -----**<br> **Fig. 1** - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) **==> picture [435 x 196] intentionally omitted <==** **----- Start of picture text -----**<br> 100 —— 100 pr<br>ae ae aees ee ee<br>es ee ee ee<br> 10<br>am T = 150 CJ ° Zoo. nnn 10 ae<br>p f T = 150 CJ °<br>|) AR<br> 1<br>oo SS a= =<br>pfpf fo7S T = 25 CJ ° 4 rt [Ar] H T = 25 CJ ° A Tt _d<br>ff i 7a ee eee<br>V = 15VGE V = 50VCC<br>0.1 | Jf 20µs PULSE WIDTH 1 a/ ne 5µs PULSE WIDTH<br> 1 10 6 8 10 12 14<br>V , Collector-to-Emitter Voltage (V)CE V , Gate-to-Emitter Voltage (V)GE<br>I , Collector-to-Emitter Current (A)C I , Collector-to-Emitter Current (A)C<br>**----- End of picture text -----**<br> **Fig. 2** - Typical Output Characteristics **Fig. 3** - Typical Transfer Characteristics www.irf.com 3 ## **IRG4BH20K-SPbF** **==> picture [438 x 478] intentionally omitted <==** **----- Start of picture text -----**<br> 12 5.0 V = 15VGE<br>80 us PULSE WIDTH<br>No<br>9 iS<br>Se 4.0 LE I = AC 10<br>PLE NEELN EEE TE ST<br>6<br>PLE ING Tt L e<br>I = AC 5<br>PT PTT ING TT? 3.0 EEA PE<br>Saeneen SECO At<br>3 I = AC 2.5<br>TTT TNSc} EPTPP PA |<br>2.0<br>0<br>25 pL titi 50 75 tits 100 125 150 -60 L -40 -20 EE 0 20 40 60 EE 80 100 Tt 120 140 160<br>°<br>°<br>T , Case Temperature ( C)C T , Junction Temperature ( C)TJJ , Junction Temperature ( °C )<br>Fig. 4 - Maximum Collector Current vs. Case Fig. 5 - Typical Collector-to-Emitter Voltage<br>Temperature vs. Junction Temperature<br> 10<br>poaaeeea 02ee eee<br>D = 0.50<br> 1 S aaSaan<br>0.20 ey em<br>a 0.10 ee ee ee ee eee eee<br>= 0.05 SSS eer PDM<br>0.1 a nt ll<br>0.02 t1<br>0.01 SINGLE PULSE<br>= 2a (THERMAL RESPONSE) Seat t2<br>ai a scee<br>wae ee ee Notes:<br>1. Duty factor D = t / t1 2<br>eA 2. Peak TJ = PDM x Z thJC + TC<br>0.01<br>0.00001 0.0001 ee 0.001 0.01 0.1 1<br>t , Rectangular Pulse Duration (sec)1<br>CE<br>Maximum DC Collector Current(A) V , Collector-to-Emitter Voltage(V)<br>thJC<br>Thermal Response (Z )<br>**----- End of picture text -----**<br> **Fig. 6** - Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 4 **IRG4BH20K-SPbF** **==> picture [435 x 480] intentionally omitted <==** **----- Start of picture text -----**<br> 800 VGE = 0V, f = 1MHz 20 VCC = 400V<br>Cies = Cge + Cgc , C SHORTEDce I C = 11A<br>Cres = Cgc<br>J Coes = Cce + Cgc 16 C EA<br>600<br>Cies 12<br>e e n are SeGeeeene7dae<br>400 or TTT eT<br>K T 8 Piesa e e, r<br>200<br>C Coes E) A<br>4<br>eS Cres Ee<br>0 PS p= TT ASE eeeeeeee<br> 1 10 100 0<br>0 5 10 15 20 25 30<br>V , Collector-to-Emitter Voltage (V)CE Q , Total Gate Charge (nC)G<br>Fig. 7 - Typical Capacitance vs. Fig. 8 - Typical Gate Charge vs.<br>Collector-to-Emitter Voltage Gate-to-Emitter Voltage<br>0.95 V = 960VCC 10 R = 50G Ω hm<br>V = 15VGE ° V = 15VGE<br>T = 25 CJ V = 960VCC<br>0.90 I = 11AC I = AC 10<br>TLE PE b er<br>I = AC 5<br>0.85<br>PEPE ear ath f lee<br>Horr 1 eet I = AC 2.5<br>0.80<br>HPAES erry<br>0.75<br>Se yy<br>PPPP a ae ae coOO<br>0.70 rere} C 0.1 L E EEE EEE<br>0 10 20 30 40 50 -60 -40 -20 0 20 40 60 80 100 120 140 160<br>R G Ω ) hm) T , Junction TempTJJ , Junction Temp eratur e ( °C )e ( C )°<br>C, Capacitance (pF)<br>GE<br>V , Gate-to-Emitter Voltage (V)<br>Total Switching Losses (mJ) Total Switching Losses (mJ)<br>**----- End of picture text -----**<br> **Fig. 9** - Typical Switching Losses vs. Gate Resistance **Fig. 10** - Typical Switching Losses vs. Junction Temperature www.irf.com 5 ## **IRG4BH20K-SPbF** **==> picture [196 x 190] intentionally omitted <==** **----- Start of picture text -----**<br> 5.0<br>R = 5G Ω hm<br>T = 150 CJ °<br>V = 960VCC<br>4.0 V = 15VGE<br>e ee<br>3.0<br>COCECCT Ze<br>2.0 Tye<br>1.0 | | |lAanPTyy<br>ep<br>0.0 COPE Cee<br>0 2 4 6 8 10<br>I , Collector Current (A)C<br>Total Switching Losses (mJ)<br>**----- End of picture text -----**<br> **Fig. 11 -** Typical Switching Losses vs. Collector-to-Emitter Current **==> picture [200 x 189] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>V = 20VGE<br>T = 125 CJ o<br>0!<br> 10 a<br>rant eset meet met<br>YE ||<br>Oa RR<br>SAFE OPERATING AREA<br> 1<br> 1 eee 10 100 Tl 1000 10000<br>V , Collector-to-Emitter Voltage (V)CE<br>C<br>I , Collector Current (A)<br>**----- End of picture text -----**<br> **Fig. 12** - Turn-Off SOA www.irf.com 6 ## **IRG4BH20K-SPbF** **==> picture [397 x 509] intentionally omitted <==** **----- Start of picture text -----**<br> RL = VCCICM<br>L D.U.T.<br>V *<br>C<br>1000V<br>480µF<br>0 - VCC<br>* Driver same type as D.U.T.; Vc = 80% of Vce(max)<br>* Note: Due to the 50V power supply, pulse width and inductor<br> will increase to obtain rated Id.<br>Fig. 13a - Clamped Inductive Fig. 13b - Pulsed Collector<br>Load Test Circuit Current Test Circuit<br>IC<br>L<br>Driver* D.U.T. Fig. 14a - Switching Loss<br>fs, in VC 7 Test Circuit<br>50V<br>1000V<br>* Driver same type<br> as D.U.T., VC = 960V<br>i .<br>90%<br>10%<br>VC<br>90% td(off) Fig. 14b - Switching LossSwitching Loss<br>Waveforms<br>IC 5%10%<br>tr tf<br>t d(on) t=5µs<br>- : Eon a Eoff<br>E = (E +E )ts on off<br>**----- End of picture text -----**<br> **==> picture [200 x 99] intentionally omitted <==** **----- Start of picture text -----**<br> L D.U.T.<br>V *<br>C<br>50V<br>1000V<br>* Driver same type as D.U.T.; Vc = 80% of Vce(max)<br>* Note: Due to the 50V power supply, pulse width and inductor<br> will increase to obtain rated Id.<br>**----- End of picture text -----**<br> **==> picture [109 x 19] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 14b - Switching LossSwitching Loss<br>Waveforms<br>**----- End of picture text -----**<br> www.irf.com 7 ## **IRG4BH20K-SPbF** **==> picture [62 x 10] intentionally omitted <==** **----- Start of picture text -----**<br> www.irf.com<br>**----- End of picture text -----**<br> 8 ## **IRG4BH20K-SPbF** Dimensions are shown in millimeters (inches) **==> picture [339 x 359] intentionally omitted <==** **----- Start of picture text -----**<br> TRR<br>00<br>1.60 (.063)<br>1.50 (.059)<br>1.60 (.063)<br>4.10 (.161)3.90 (.153) 1.50 (.059) 0.368 (.0145)<br>0.342 (.0135)<br>ZN<br>FEED DIRECTION 1.85 (.073) i 11.60 (.457)<br>1.65 (.065) 11.40 (.449) 24.30 (.957)<br>e949 06 ia 15.42 (.609) _ |<br>23.90 (.941)<br>15.22 (.601)<br>TRL<br>1.75 (.069)<br>10.90 (.429) 1.25 (.049)<br>10.70 (.421) 4.72 (.136)<br>16.10 (.634) 4.52 (.178)<br>15.90 (.626)<br>la ii x | i<br>FEED DIRECTION<br>13.50 (.532) 27.40 (1.079)<br>12.80 (.504) 23.90 (.941) 1<br>4<br>330.00 60.00 (2.362)<br>(14.173) MIN.<br> MAX.<br>| OO |<br>30.40 (1.197)<br>NOTES : MAX.<br>1. COMFORMS TO EIA-418.2. CONTROLLING DIMENSION: MILLIMETER. 26.40 (1.039)24.40 (.961) It 4<br>3. DIMENSION MEASURED @ HUB.<br>3<br>**----- End of picture text -----**<br> 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. Data and specifications subject to change without notice. **IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 01/2010 www.irf.com 9
Updated at February 9, 2023
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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