IRG4BC40WPBF

IGBT, 40 A, 2.5 V, 160 W, 600 V, TO-220AB, 3 Pins

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Manufacturer: INFINEON
Product type: Single IGBTs
No. of Pins: 3Pins
Power Dissipation: 160W
Transistor Mounting: Through Hole
Transistor Case Style: TO-220AB
Operating Temperature Max: 150°C
Continuous Collector Current: 40A
Collector Emitter Voltage Max: 600V
Collector Emitter Saturation Voltage: 2.5V

Delivery and price
Units per pack	1
Price	3.31 €
Current stock	10+
Lead time	30 days

Datasheet

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TO-220AB<br>**----- End of picture text -----**<br>


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θ<br>Ric | dunctionto-CaseSSSCS~—~SC“‘“‘—C NCSC<br>θ<br>Ros | Case-to-Sink, Flat, Greased Surface =| SCS —~*d CN<br>θ<br>Rus | unetion-to-Ambient, typical socket mount [| a0<br>20H<br>we Went ae |<br>www.irf.com 1<br>**----- End of picture text -----**<br>


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∆ ∆<br>Perce [err cots seston vote© 18 [| V [Vee=ov ext<br>| — [2.05 | 2.5 | Ic = 20A Vor = 15V<br>Si<br>[Vem |— |190| — | lc =20A , Ty = 150°C<br>∆ ∆<br>F Vecwny [GateTol TemperatureThresholdCoeffVottageof Threshold Votage|| 3.0— || 13— ||60— ||mVFC| Voz=Vee,lo=250uA «|<br>=<br>100V.b=2A_—*d<br>foe [Forward Transconductance © «| 48 | 28 |— | S | Voz<br>=<br>ames [R=] Voe =OV, Voz = 600V<br>[ces | GaletoEnitier Leakage Current [— [= |st00/2500 | nA [Voc==20v<br>Switching Characteristics @ Ty = 25°C (unless otherwise specified)<br>|| Parameter Min. Typ. [Max.| Units| Conditions<br>[Qg | Total Gate Charge (turn-on) | — | 98 | 147 | Ic =20A<br>FQ. | Gate = Collector Charge (turn-on) [— | 36 [84 | | Voe=15V<br>aon |Turn-OnDelayTime<br>—SSC~—~SCSS<br>ft; «i RiseTime S| |PT2 | — |, | y= HVC<br>Ω<br>fi [raltime—SSOS~SCSCSCSS]<br>toss————«|<br>[En[Ec | Tum-On Switching — HATO][O11|— |_|| VoceEnergy = 15V, losses Ro include = 10  "tai<br>fesenty ||fleworTumn-Off SwitchingTun-On sg Delay Tine Losstee ——~||f=Sew— [0.23|—fas  | mi | fareSee Fig. 9,10, 14<br>Ω<br>[tan a ee Ic = 20A, Veo = 480V<br>**----- End of picture text -----**<br>


≤ ≤ Ω 

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50<br>For both: Triangular wave:<br>Duty cycle: 50%<br>TPN T   = 125°CJ | | 1111 | | | 1 1<br>40 T        = 90°Csink<br>PL T Gate drive as specified Le<br>Power Dissipation = 28W Clamp voltage:<br><eT 30 LAMLLL U K 80% of rated<br>Square wave:<br>60% of rated<br>eo 20         voltage d e be MNoeNATITce 5 ELI<br>P 10 P Ideal diodes JU L ME [LUMPS] NOTETY LT<br>0 WELL: eb A<br>0.1 SS 1 10 | irs 100 1000<br>f, Frequency (kHz)<br>**----- End of picture text -----**<br>


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 1000<br>See eee=<br>T  = 25  CJ °<br>a a a<br> 100<br>T  = 150  CJ °<br>fF | wl | | |<br> 10 AL<br>| |<br>V      = 15VGE<br> 1 p ep 80µs PULSE WIDTH<br>1.0 2.0 3.0 4.0 5.0<br>V     , Collector-to-Emitter Voltage (V)CE<br>C<br>I   ,  Collector-to-Emitter Current (A)<br>**----- End of picture text -----**<br>


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 1000<br>pf<br>a ee ee ee ee<br> 100<br>T  = 150  CJ °<br>4<br> 10 Li T  = 25  CJ ° ee eee eeel<br>V      = 50VCC<br>e e 5µs PULSE WIDTH<br> 1<br>5 7 9 11<br>V     , Gate-to-Emitter Voltage (V)GE<br>C<br>I   ,  Collector-to-Emitter Current (A)<br>**----- End of picture text -----**<br>


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50 3.0<br>V      = 15VGE<br>80 us PULSE WIDTH<br>ptti ti ti td EE E<br>40 I   =       AC 40<br>2.5 _—— a<br>SoS ee<br>> | EEE ~~ o<br>30<br>NE sera tt<br>I   =       AC 20<br>2.0<br>COOERCCEP)) = R R<br>20 I   =       AC 10<br>pif tt IN a Se<br>4 tN OO Ee D n oe<br>1.5<br>Soeeceee<br>10 Pit tT eyTIN<br>0 PT EET TTT rx 1.0 PPE EEE EEEEE<br>25 50 75 100 125 150 -60 -40 -20 0 20 40 60 80 100 120 140 160<br>T   , Case Temperature (  C)C ° T   , Junction Temperature (  C)J °<br>Fig. 4 - Maximum Collector Current vs. Case Fig. 5 - Typical Collector-to-Emitter Voltage<br>Temperature vs. Junction Temperature<br> 1 ==<br>eS ee ee east neil<br>D = 0.50<br>ce arate en es ee Ll<br>rr<br>e 0.20 OnA pwneea |<br>0.1 ee 0.10 ea Aeee ee ee | PDM<br>0.05<br>t1<br>cies O—oeaeZ eee<br>0.02 SINGLE PULSE t2<br>St 0.01  b e: (THERMAL RESPONSE) ace  0 Notes:<br>wae o> liemneneea Ail ||<br>1. Duty factor D = t   / t1 2<br>2. Peak TJ = PDM x  Z thJC + TC<br>0.01 S TR TTIIl AIT<br>0.00001 alll 0.0001 A 0.001 ET 0.01 0.1  1<br>t  , Rectangular Pulse Duration (sec)1<br>Maximum DC Collector Current(A) CE<br>V     , Collector-to-Emitter Voltage(V)<br>thJC<br>Thermal Response (Z        )<br>**----- End of picture text -----**<br>


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4000<br>VGE = 0V, f = 1MHz<br>Cies = Cge + Cgc , C      SHORTEDce<br>Cres = Cgc<br>TT] Coes = Cce + Cgc<br>3000 \ |<br>P S Cies U TT<br>Naa Su t<br>2000<br>||<br>| alll<br>Coes<br>1000 INET EET<br>Cres<br>eS EE<br>P ~RLhoo<br>0<br> 1  10  100<br>V     , Collector-to-Emitter Voltage (V)CE<br>Fig. 7 - Typical Capacitance vs.<br>Collector-to-Emitter Voltage<br>1.0<br>V      = 480VCC<br>0.9 V      = 15VT      = 25    CJGE °<br>I       = 20AC | | | | | PF<br>0.8 a rt CLAW<br>0.7<br>Poptea<br>Sa<br>0.6<br>a<br>4Aeeeeeee<br>0.5 TTATLLLT<br>0.40.3 2Yia {it eei ttttt<br>10 20 30 40 50 60<br>R    , Gate Resistance (Ohm)G  (Ω)<br>C, Capacitance (pF)<br>Total Switching Losses (mJ)<br>**----- End of picture text -----**<br>


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20<br>VCC = 400V<br>I C = 20A<br>P T<br>16<br>Pt; tT<br>HERA<br>12<br>Sane<br>PTT Ey<br>8<br>SERRE 4EeR<br>pat<br>4<br>ee<br>LtAREER| ytpy<br>0<br>0 20 40 60 80 100<br>Q   , Total Gate Charge (nC)G<br>Fig. 8 - Typical Gate Charge vs.<br>Gate-to-Emitter Voltage<br> 10<br>R      =G Ωhm<br>V      = 15VGE<br>V      = 480VCC SeGeGeeeee<br>Seeeeeeeeeee<br>Oa a ne a I   =       AC 40<br>|ilil| |ipases i<br> 1 I   =       A C 20<br>pee<br>SUnERM CARDED Pe ce Gatine<br>POPE eamass I   =       AC 10<br>ONBSFan oeBERRDS<n<br>Tt peer<br>IterpiaerTililililil<br>0.1<br>-60 -40 -20 0 20 40 60 80 100 120 140 160<br>T  , Junction Temperature (  C )J °<br>GE<br>V     , Gate-to-Emitter Voltage (V)<br>Total Switching Losses (mJ)<br>**----- End of picture text -----**<br>


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2.0<br>R      G ΩOhm<br>T      = 150  CJ °<br>V      = 480VCC | ||Via<br>V      = 15VGE<br>1.5 || iYLFan<br>T TT Tys Z|<br>1.0 aaa / ane<br>||| || |||<br>0.5 | | 4a4 | ||| | |<br>4<br>0.0<br>5 15 25 35 45<br>I    , Collector-to-emitter Current (A)C<br>Total Switching Losses (mJ)<br>**----- End of picture text -----**<br>


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 1000<br>V      = 20VGE<br>T      = 125  CJ o<br>| a<br>a ||||<br>nN|||<br> 100 IE Com | CN II<br>740ceeeeeee<br>7 | | ll<br>eelee<br>SAFE OPERATING AREA<br> 10<br> 1  10  100  1000<br>V     , Collector-to-Emitter Voltage (V)CE<br>C<br>I   ,  Collector-to-Emitter Current (A)<br>**----- End of picture text -----**<br>


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L D.U.T.<br>V  *<br>C<br>50V<br>1000V<br>(0)<br>* Driver same type as D.U.T.; Vc = 80% of Vce(max)<br>* Note: Due to the 50V power supply, pulse width and inductor<br>   will increase to obtain rated Id.<br>**----- End of picture text -----**<br>


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RL = VCCICM<br>480µF<br>0 - VCC<br>Pulsed Collector Current<br>Test Circuit<br>**----- End of picture text -----**<br>


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IC<br>000 N<br>L<br>Driver* D.U.T.<br>VC<br>50V<br>1000V<br>T (IE) Ch<br>o<br>(©)<br>J \<br>90%<br>10%<br>VC<br>90%<br>ee (Toy td(off) 2<br>IC 5%10%<br>tr tf<br>t d(on) t=5µs<br>Eon Eoff<br>E   = (E    +E    )ts        on      off<br>**----- End of picture text -----**<br>


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Note:   "P" in assembly line<br>position indicates "Lead-Free"<br>**----- End of picture text -----**<br>


Data and specifications subject to change without notice. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 

TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 02/2010 

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Updated at February 9, 2023

Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.

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