IRG4BC40UPBF
IGBT, 40 A, 2.4 V, 160 W, 600 V, TO-220AB, 3 Pins
- Manufacturer: INFINEON
- Product type: Single IGBTs
- No. of Pins: 3Pins
- Power Dissipation: 160W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-220AB
- Operating Temperature Max: 150°C
- Continuous Collector Current: 40A
- Collector Emitter Voltage Max: 600V
- Collector Emitter Saturation Voltage: 2.4V
| Delivery and price | |
|---|---|
| Units per pack | 250 |
| Price | 1.28 € |
| Current stock | 10+ |
| Lead time | 30 days |
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Breakdownof Saturation BreakdownVoltage Voltage Voltage|© || --------18 ||1.72||0.63---- |- 2.1 --- -| | V/°CV_|| V Ic ce=0V.lc=1.0Aoce = =20AOV, Io= 1.0mA<br>| | ---- ]2.15]---| V_ | Io= 40a<br>\Vcen | ---- [1.7 | ---- | Ic = 20A, Ty = 150°C<br>∆ ∆<br>|_Voeqn/ | Gate Threshold Voltage | 3.0 | ---- | 6.0 | Voce = Vee, Ic = 250A<br>le | TJ ForwaTempe r atured TransconductanceCoeff. of Threshold© Voltagd|| ----14 || -1318 | -- - - - |[mV/*C]S$ | V oeoe== Voc,100V,loIc= =250A208<br>| oes | Zero Gate Voltage Collector Current | ---- ---- | | ---- ---- | | 250 2.0|| yA | Voce Voe = OV, = OV, VoceVce = = 10V,600V<br>| ---- | ---- [2500] Voe = OV, Vor = 600V,<br>IcES Gate-to-Emitter Leakage Current ---- | ---- [+100] nA | Voce = +20V<br>Switching Characteristics @ Ty = 25°C (unless otherwise specified)<br>[Qg Parameter Min.|Typ. |Max. | Units<br>[Que | TotalGate -GateEmitterChargeCharge(turn-on)(turn-on) || ~~~---- ||10016 |[15025|| nC | Voclo = 208= 400v<br>[Qgc____| Gate - Collector Charge (turn-on) | ---- | 40 | 60 | Voce = 15V<br>[tajon) | Turn-OnDelayTime | ~~ | 34 | ~~ | T)=25°C<br>te OTRiseTime<br>Ω<br>ftom | 19 | | is | Io = 208, Veo = 480<br>te | Turn-Off Delay Time = | 110 [175 | | Ve = 15V, Ro = 10<br>[En | Falltime | | 120 | 180 | Energy losses include<br>[Er | Turn-On Switching Loss| ~~~ | 0.32 | ---- |<br>[Es | Turn-Off Switching Loss | --~- 0.35 | --- | mi | See Fig. 10, 11, 13, 14<br>ftscon) | Total SwitchingLoss | ~~ [0.67 | 1.0 |<br>te | Turn-OnDelayTime | == | 30 | | T= 150°C,<br>Ω<br>[tao RiseTime = | 19 [| nss | Ic = 20, Veo = 480V<br>**----- End of picture text -----**<br> ≤ ≤ Ω www.irf.com 2 **==> picture [437 x 256] intentionally omitted <==** **----- Start of picture text -----**<br> IRG4BC40UPbF<br>TER Rectifier<br>60<br>For both: Triangular wave:<br>Duty cycle: 50%<br>50 T = 125°CJ I<br>T = 90°Csink<br>Gate drive as specified we |<br>e e Power Dissipation = 28W Clamp voltage:<br>40 80% of rated<br>— | |IP e N<br>Square wave:<br>-2 30 (| 60% of rated E T PABast nnnal<br> voltage<br>oFPP 2010 Ideal diodesI e LTEe Pe EEN<br>r wella<br>0 i ii<br>0.1 1 10 100<br>f, Frequency (kHz)<br>**----- End of picture text -----**<br> **==> picture [203 x 200] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>ee |<br>100<br>T = 25°CJ<br>en y n<br>T = 150°CJ<br>ee ee<br>10<br>SA A<br>V = 15VGE<br>en<br>1 FL | LLY 20us PULSE WIDTH|<br>0.1 1 10<br>V , Collector-to-Emitter Voltage (V)CE<br>I , Collector-to-Emitter Current (A)C<br>**----- End of picture text -----**<br> **==> picture [202 x 198] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>ee ee ee<br>100<br>T = 150°CJ<br>| | | “A | ft<br>T = 25°CJ<br>10<br>Ye<br>V = 10VCC<br>1 PP| ft | 5yus PULSEce WIDTHJ wore<br>4 6 8 10 12<br>V , Gate-to-Emitter Voltage (V)GE<br>I , Collector-to-Emitter Current (A)C<br>**----- End of picture text -----**<br> www.irf.com 3 ## IRG4BC40UPbF **==> picture [433 x 480] intentionally omitted <==** **----- Start of picture text -----**<br> 40 ~NNY Vo = 15Vi 2.5 Db80ys =15VPULSE WIDTH |paane<br>I = 40AC<br>30 PONE ArT Py<br>> 2.0 ee e<br>ERE NUE at<br>20 Pt tN PPPPE I = 20AC<br>IN 1.5 aT<br>10 ee Ne So Lt I = 10AC TAT<br>A<br>0 1.0<br>25 50 75 100 125 150 -60 -40 -20 0 20 40 60 80 100 120 140 160<br>T , Case Temperature (°C)C T , Junction Temperature (°C)J<br>Fig. 4 - Maximum Collector Current vs. Case Fig. 5 - Collector-to-Emitter Voltage vs.<br>Temperature Junction Temperature<br>1<br>PE<br>eea CYne mee ee<br>a — cD<br>| ng O_o<br>nee<br>D = 0.50<br>TT<br>_ F Tee e at ee | e e) ee||<br>0.20<br>0.1 a |_| paseeaA | EL<br>0.10<br>Pp i eeresFFaeC P TT DM<br>eeeT AAA<br>0.05 t<br>1<br>—| eAam SINGLE PULSE aHoey + t 2<br>0.02 (THERMAL RESPONSE)<br>Pal 9 7 i Oe a| DL t Oo _<br>0.01 1. Duty factor D = t / t 1 2<br>OE<br>0.01<br>UI TEI ET ee cn oe ones<br>0.00001 0.0001 0.001 0.01 0.1 1 10<br>t , Rectangular Pulse Duration (sec)1<br>Maximum DC Collector Current (A) CE<br>V , Collector-to-Emitter Voltage (V)<br>thJC<br>Thermal Response (Z )<br>**----- End of picture text -----**<br> www.irf.com 4 ## IRG4BC40UPbF **==> picture [429 x 201] intentionally omitted <==** **----- Start of picture text -----**<br> 20<br>4000<br>V = 0V, f = 1MHzGE<br>C = C + C , C SHORTEDies ge gc ce<br>C = C<br>J C = C + Cres gc 16 rca TPT<br>oes ce gc<br>3000 s eae<br>Ss [es] 12 po<br>2000 KETTLESe Rete<br>es 8<br>O E E lll| pp py Z<br>1000 es<br>4<br>PAGReORenEe<br>A:NUT [SS][ ut] GARE<br>Se e e [ee] |<br>0 A 0<br>eel 0 pot 20 | 40 tj 60 80 100 120<br>1 10 100<br>V , Collector-to-Emitter Voltage (V)CE Q , Total Gate Charge (nC)g<br>C, Capacitance (pF)<br>GE<br>V , Gate-to-Emitter Voltage (V)<br>**----- End of picture text -----**<br> **==> picture [429 x 200] intentionally omitted <==** **----- Start of picture text -----**<br> 1.1 10<br> R = 10G Ω<br>q = 15V V = 15VGE SS ee ee<br> V = 480VCC<br>1.0 T= 480V Pt et | Td PERE EE I = 40AC EES<br>0.9 Seeeeeee4ee Pf fp ey I = 20AC<br>1<br>PTY} oe ee<br>pf yt yt yt eer tt | |<br>0.8 I = 10AC<br>0.7 SE WA Pa ae EP ae<br>ae HE eer<br>A REEDS a 00 DER Genemene<br>0.6 PP A 0.1 ELE<br>0 10 20 30 40 50 60 -60 -40 -20 0 20 40 60 80 100 120 140 160<br>R , Gate Resistance (G Ω) T , Junction Temperature (°C)J<br>Total Switching Losses (mJ) Total Switching Losses (mJ)<br>**----- End of picture text -----**<br> www.irf.com 5 ## IRG4BC40UPbF **==> picture [432 x 200] intentionally omitted <==** **----- Start of picture text -----**<br> 4.03.0 aeql =1 Sfeee) ft) | 1000 a T 20V Sepp<br>Spe / Smet<br>Bae 100 EN eainl<br>V Py<br>2.0<br>oleaeaaa P-—7AHparcoresarncme)HH Hh|ill<br>10<br>1.0 Saeaneeee a<br>Lf PA ay<br>PY ff | ee |<br>0.0 pe A 1 PC7 eeCTill<br>0 10 20 30 40 50 1 10 100 1000<br>I , Collector-to-Emitter Current (A)C V , Collector-to-Emitter Voltage (V)CE<br>Total Switching Losses (mJ)<br>I , Collector-to-Emitter Current (A)C<br>**----- End of picture text -----**<br> www.irf.com 6 ## IRG4BC40UPbF **==> picture [195 x 99] intentionally omitted <==** **----- Start of picture text -----**<br> L D.U.T.<br>V *<br>C<br>50V<br>1000V<br>0)<br>* Driver same type as D.U.T.; Vc = 80% of Vce(max)<br>* Note: Due to the 50V power supply, pulse width and inductor<br> will increase to obtain rated Id.<br>**----- End of picture text -----**<br> **==> picture [133 x 135] intentionally omitted <==** **----- Start of picture text -----**<br> RL = VCCICM<br>480µF<br>0 - VCC<br>Pulsed Collector Current<br>Test Circuit<br>**----- End of picture text -----**<br> **==> picture [264 x 334] intentionally omitted <==** **----- Start of picture text -----**<br> IC<br>000 NN<br>L<br>Driver* D.U.T.<br>VC<br>50V<br>1000V<br>T (IE) Ci)<br>o<br>(©)<br>JV<br>90%<br>10%<br>VC<br>90%<br>SS See (ose td(off) 2 a<br>IC 5%10%<br>tr tf<br>t d(on) t=5µs<br>Eon Eoff<br>E = (E +E )ts on off<br>**----- End of picture text -----**<br> www.irf.com 7 ## IRG4BC40UPbF **==> picture [77 x 12] intentionally omitted <==** **----- Start of picture text -----**<br> Note: "P" in assembly line<br>position indicates "Lead-Free"<br>**----- End of picture text -----**<br> Data and specifications subject to change without notice. **IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 02/2010 www.irf.com 8
Updated at February 9, 2023
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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