IRG4BC40FPBF

IGBT, 49 A, 1.85 V, 160 W, 600 V, TO-220AB, 3 Pins

⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.

Manufacturer: INFINEON
Product type: Single IGBTs
No. of Pins: 3Pins
Power Dissipation: 160W
Transistor Mounting: Through Hole
Transistor Case Style: TO-220AB
Operating Temperature Max: 150°C
Continuous Collector Current: 49A
Collector Emitter Voltage Max: 600V
Collector Emitter Saturation Voltage: 1.85V

Delivery and price
Units per pack	100
Price	2.79 €
Current stock	10+
Lead time	30 days

Datasheet

## IRG4BC40FPbF 

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TO-220AB<br>**----- End of picture text -----**<br>


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IRG4BC40FPbF<br>TOR Rectifier<br>Electrical Characteristics @ Ty = 25°C (unless otherwise specified)<br>Parameter Min. |Typ.|Max.|Units| Conditions |<br>∆ ∆<br>eceos_— {Eri cots reston Vote @ [18 {—"[— | V [Vee os tok<br>| — [1.50] 1.7 | Ic =27A Voe = 15V<br>Se<br>[Voz |— [156 | — | lc =27A,, Ty = 150°C<br>∆ ∆<br>F Ven [GateTul TemperatureTrreshoddCoeff.Votageof Threshold_——=«iVoltage | 30— |[12 — |[—60 ||mVFC| Vee =Vee.le=250H8<br>=<br>fe [Forward Transconductance © =f 92 | 12 |— | S | Voz 10V,b=27A i<br>— | 20 | Vo = OV, Voce = 10V, Ty = 25°C<br>no Seco<br>| —<br>Switching Characteristics @ Ty = 25°C (unless otherwise specified)<br>| [Parameter | Min. | Typ. (Max.|units| Conditions<br>[Q, | Total Gate Charge (turn-on) | — | 100 | 150 | lo = 27A<br>FQ. | Gate = Collector Charge (turn-on) [— [38 [83 | | Voe=15V<br>[tao |Turn-OnDelayTime<br>SSS~*~—s<br>ft; '([RiseTime ——SSSC«d | 21 8 | — | g | Tue DBCC<br>Ω<br>fh =i [Falitime—SSSSCS~C~S~SCSCS]<br>Loss__———~(|<br>Ex | Tumn-On Switching ATO AO] | Vee = 15V, R= 10<br>Loss|<br>[Er[Ets | Turn-Off Switching —— |037||1.81|— — |_|| mv | SeeEnergyFig. losses10, 11, include13, 14 "tail<br>sen—_[te | T otalun- Switchingl o ss neeyrinef=| — [2.18 |fas f=28 J | ni<br>Ω<br>[tan [RiseTime | — | tt | — | lo = 27A, Voc = 480V<br>**----- End of picture text -----**<br>


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## IRG4BC40FPbF 

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60<br>For both: Triangular wave:<br>Duty cycle: 50%<br>50 aBane | T   = 125°CJ e ee \ I aN<br>T        = 90°Csink<br>Gate drive as specified<br>Power Dissipation = 28W Clamp voltage:<br>- 40 CO IN 80% of rated<br>Square wave:<br>©= 30 P 60% of rated O neTTINGIN | [ttt] al<br>        voltage<br>aBL 20 l Ke I Tirosl  PSUacl TTT<br>100 e a r Ideal diodes HU TT rtil|<br>0.1 1 10 100<br>f, Frequency (kHz)<br>Fig. 1 - Typical Load Current vs. Frequency<br>(For square wave, |=lRms of fundamental; for triangular wave, |=Ipx)<br>1000 1000<br>a ee ee a ea ee ee<br>~e Po | | -F tt tty | | | | dt dP dt | dT rT |<br>T  = 25°CJ<br>Ss 100 L T 100 ee<br>T  = 150°CJ<br>T  = 150°CJ<br>7= |...——fA  a attt 4 |RS| | TAA fT Tf ft ft<br>TT$ ry Ze ee  e e Pi lAA tT<br>PL 10 F4 10 LAAA T  = 25°CJ s,|| ,|| ft|<br>Sn a ay A eseG<br>ee es PT<br>° V     = 15VGE yt V      = 50VCC<br>1 PT 20us PULSE WIDTH A 1 Vanef 5us PULSE WIDTH]<br>1 10 5 6 7 8 9 10 11 12<br>V     , Collector-to-Emitter Voltage (V)CE V    , Gate-to-Emitter Voltage (V)GE<br>I   , Collector-to-Emitter Current (A)C<br>**----- End of picture text -----**<br>


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## IRG4BC40FPbF 

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50<br>2.5<br>SS S) op e I    = 54AC<br>40<br>pM Tepe<br>PENS 2.0 eer L E<br>30<br>| IN aaa<br>20 PS OEE ERED I    = 27AC<br>ee 1.5 itLeet<br>10<br>PNG TT T<br>aN a I    = 14AC<br>0 PENN 1.0 OEE<br>25 50 75 100 125 150 -60 -40 -20 0 20 40 60 80 100 120 140 160<br>T   , Case Temperature (°C)C T  , Junction Temperature (°C)J<br>Maximum DC Collector Current (A)<br>CE<br>V     , Collector-to-Emitter Voltage (V)<br>**----- End of picture text -----**<br>


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1<br>ee<br>eea rrcg ce a a cil<br>|<br>D = 0.50<br>FT Naeea0ee TTen lll<br>0.20<br>0.1 eee a a A<br>0.10<br>a en ee | P T DM<br>0.05 t<br>1<br>| S       SINGLE PULSE O | t 2<br>0.02 (THERMAL RESPONSE)<br>| 9 7 i Oe | DL t _<br>ea e ee t e<br>0.01 1. Duty factor D =  t   / t 1 2<br>UN M<br>0.01<br>FIM FLT ieee oe ee sree<br>0.00001 0.0001 0.001 0.01 0.1 1 10<br>t   , Rectangular Pulse Duration (sec)1<br>thJC<br>Thermal Response (Z        )<br>**----- End of picture text -----**<br>


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## IRG4BC40FPbF 

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4000 2016<br>Cres = Cce<br>LE==] 16 FEE<br>3000<br>eA SS s oem PE<br>3 Ye w+ | | 12 Pot TK<br>2000<br>s Littrell SaGn<br>8<br>PNT Gn ennn<br>S Eee<br>1000 kN es | |<br>4<br>Sc s 7<br>0 pS YR | Waa A 0 ABER<br>1 10 100 0 20 40 60 80 100<br>V    , Collector-to-Emitter Voltage (V)CE Q  , Total Gate Charge (nC)gg<br>GE<br>V     , Gate-to-Emitter Voltage (V)<br>**----- End of picture text -----**<br>


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2016 FEE<br>PE<br>12 Pot TK<br>SaGn<br>8<br>Gn ennn<br>Eee<br>|<br>4 7<br>0 ABER<br>0 20 40 60 80 100 120<br>Q  , Total Gate Charge (nC)gg<br>GE<br>V     , Gate-to-Emitter Voltage (V)<br>**----- End of picture text -----**<br>


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2.60<br>2 2.50 fi nol ae<br>&<br>2 Pil Wl<br>P 2.40 EEP<br>ef  A<br>2.30<br>2 Ae] [tty] | |<br>2 PAR EE<br>5 2.20 | Yi] | | |<br>TT ey Td Th<br>2.10 pe<br>0 10 20 30 40 50 60<br>R    , Gate Resistance G  (Ω)<br>**----- End of picture text -----**<br>


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10<br>PietPiety yeTepePeep tT pt yeEEEye I    = 54AC EE | |<br>POPC<br>I    = 27AC<br>Leerp= Te<br>1 I    = 14AC<br>te ee<br>Bap =<br>RPP= anne<br>PE<br>PE  R      = 10G Ω<br> V      = 15VGE<br>EEE  V      = 480VCC<br>0.1 EE<br>-60 -40 -20 0 20 40 60 80 100 120 140 160<br>T  , Junction Temperature (°C)J<br>Total Switching Losses (mJ)<br>**----- End of picture text -----**<br>


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## IRG4BC40FPbF 

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10<br>8 pvM5sav} | | | to oY |<br>6 SeGeGeGe/ Zee<br>4 Baan 4a<br>Buen 4eeeeee<br>2 Pi LAs Et<br>0 Pett<br>0 10 20 30 40 50 60<br>I   , Collector-to-Emitter Current (A)C<br>Total Switching Losses (mJ)<br>**----- End of picture text -----**<br>


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1000<br>ee<br>ET<br>100<br>eea<br>A<br>10 | nh<br>ee<br>1 |en il<br>1 10 100 1000<br>V     , Collector-to-Emitter Voltage (V)CE<br>I   , Collector-to-Emitter Current (A)C<br>**----- End of picture text -----**<br>


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## IRG4BC40FPbF 

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L D.U.T.<br>V  *<br>C<br>50V<br>1000V<br>(0)<br>* Driver same type as D.U.T.; Vc = 80% of Vce(max)<br>* Note: Due to the 50V power supply, pulse width and inductor<br>   will increase to obtain rated Id.<br>**----- End of picture text -----**<br>


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RL = VCCICM<br>480µF<br>0 - VCC<br>Pulsed Collector Current<br>Test Circuit<br>**----- End of picture text -----**<br>


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IC<br>000 NN<br>L<br>Driver* D.U.T.<br>VC<br>50V<br>1000V<br>T (IE) Ci)<br>o<br>(©)<br>JV<br>90%<br>10%<br>VC<br>90%<br>SS See (ose td(off) 2 a<br>IC 5%10%<br>tr tf<br>t d(on) t=5µs<br>Eon Eoff<br>E   = (E    +E    )ts        on      off<br>**----- End of picture text -----**<br>


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## IRG4BC40FPbF 

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Note:   "P" in assembly line<br>position indicates "Lead-Free"<br>**----- End of picture text -----**<br>


Data and specifications subject to change without notice. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 

TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 02/2010 

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Updated at February 9, 2023

Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.

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