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IRG4BC30UDPBF
IGBT, 23 A, 2.52 V, 100 W, 600 V, TO-220AB, 3 Pins
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single IGBTs
- No. of Pins: 3Pins
- Power Dissipation: 100W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-220AB
- Operating Temperature Max: 150°C
- Continuous Collector Current: 23A
- Collector Emitter Voltage Max: 600V
- Collector Emitter Saturation Voltage: 2.52V
| Delivery and price | |
|---|---|
| Units per pack | 1 |
| Price | 2.66 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**==> picture [158 x 95] intentionally omitted <==** **----- Start of picture text -----**<br> C<br>_<br>Vces =<br>=<br>VcE(on) typ.<br>G<br>Ver = 15V Io<br>E<br>@Vce<br>n-channel<br>**----- End of picture text -----**<br> **==> picture [44 x 8] intentionally omitted <==** **----- Start of picture text -----**<br> TO-220AB<br>**----- End of picture text -----**<br> **==> picture [26 x 37] intentionally omitted <==** **----- Start of picture text -----**<br> R θ uc<br>θ<br>[Ric<br>θ<br>[Res<br>**----- End of picture text -----**<br> www.irf.com 1 **==> picture [408 x 403] intentionally omitted <==** **----- Start of picture text -----**<br> [Vances Parameter Min. |Typ. |Max. | Units Conditions<br>∆ ∆<br>[Vianices/ _| Colectorto-Emitter Breakdown Vottage@| 600 [—- | —- | V_| Vee= OV, lo = 250HA<br>| VcE(on) 7]| Collector-to-Emitter Temperature Coe. ofSaturation Breakaown Voltage Votage||ean----~-- [1.95[0.63 [-—- | 2.1 || VPC | Ver Ic Io = = 23A =OV,12A lo = 1.0mA See Vor Fig. =<br>ecm | ---- [2.09 | ---- | Ic = 12A, Ty = 150°C<br>∆ ∆<br>Vaetny Tu Temperature Coeff of Threshold Voltage] —-_| 11 | —— fnVFO] Voe = Vor: lc = 250uA<br>fae Forward Transcondustance © [31 [86|-——| S| Voe=100V, o= 12A<br>IcEs Zero Gate Voltage Collector Current |SS--- | --- | 250 | WA | Voce Voe = OV, = OV, Vee Voce = = 600V, 600V Ty =<br>[ VeM | Diode Gate Threshold Forward Voltage Votage Drop «SO}----|[1.4 [1.7][60] V | |] Ic=12A Vor= Vor, See Fig.<br>| ---- [1.3 | 1.6 | Ic =12A, Ty = 150°C<br>IcES Gate-to-Emitter Leakage Current ---- | ---- [+100] nA | Vee = +20V<br>Switching Characteristics @ Ty = 25°C (unless otherwise specified)<br>Parameter Min. Typ. Max. Units Conditions<br>Qg Total Gate Charge (turn-on) ---- | 50 | 75 Io = 12A<br>[age | Gate Emiter Charge (um-on) [== [81 [72 [WC | Voo= 40 See Fig 8<br>[Qy. | Gate Collector Charge (um-on) [= [18 [27] | Voe=18V<br>fen |Tum-OnDelayTimef= = | | Tue 28rC<br>[Reeve<br>Ω<br>fee [Tum-OWDaayTime] | 28 [fm | o TA, Veo = BDV<br>f=<br>fe [Faltime f= |[8097 [730[TAO ] | VorEnergy15V, losses Ro =include 28 “tai” and<br>Loss‘<br>ExFs | TurmOff Switching [O.18[-—= | Tal | See Fig. 9, 10, 11,18<br>|Tum-OnDelyTime<br>fen Tolal Swiching Loss [==<br>tin [== 40 [==] | T= 150°C, See Fig. Ω 9, 10,11,<br>fac [Tum DaayTime [==a[120] | Vee = 18V, Re=23<br>er [if] Faltime [180 [==] | Energy losses include "tai" and<br>**----- End of picture text -----**<br> www.irf.com 2 **==> picture [435 x 522] intentionally omitted <==** **----- Start of picture text -----**<br> 16<br>Duty cycle: 50%<br>T = 125°CJ<br>T = 90°Csink<br>TTA Gate drive as specified e e<br>12 Turn-on losses include<br>effects of reverse recovery<br>Power Dissipation = 21W<br>60% of rated<br>a5 8 a voltage n NNr<br>g = I<br>4 u n PN<br>st. TIL LIIE PANS<br>0 UME LHI EL|<br>0.1 1 10 100<br>f, Frequency (kHz)<br>Fig. 1 - Typical Load Current vs. Frequency<br>(Load Current = Ipysg of fundamental)<br>100 100<br>T = 25°CJJ<br>P B T = 150°CJJ a T = 150°CJJ r<br>10 I Fol 10 w l<br>|<br>T = 25°CJ<br>l/l PA L<br>1 1<br>pop YI<br>V = 15VGEGE V = 10VCC<br>0.1 A 0.1<br>0.1 poMmeeuscwos!Mmeeuscwos! 1 10 —— 5 LLL 6 7 8 seoutsewor 9 10 11 12<br>V , Collector-to-Emitter Voltage (V)CE V , Gate-to-Emitter Voltage (V)GE<br>I , Collector-to-Emitter Current (A)CC I , Collector-to-Emitter Current (A)CC<br>**----- End of picture text -----**<br> **==> picture [321 x 197] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>T = 25°CJJ<br>P B T = 150°CJJ T = 150°CJJ<br>10 I Fol 10<br>J<br>l/l<br>1 1<br>pop<br>V = 15VGEGE<br>0.1 A 0.1<br>0.1 poMmeeuscwos!Mmeeuscwos! 1 10 —— 5 LLL 6 7<br>V , Collector-to-Emitter Voltage (V)CE GE<br>I , Collector-to-Emitter Current (A)CC I , Collector-to-Emitter Current (A)CC<br>**----- End of picture text -----**<br> www.irf.com 3 **==> picture [434 x 521] intentionally omitted <==** **----- Start of picture text -----**<br> 3.0<br>IV =15V<br>25 I = 24AC<br>Coe . a> _.a=am<br>20<br>2.5<br>AS OLAe T<br>PIN TF nad<br>15<br>PN yd<br>I = 12AC<br>10 Pit ENE 2.0 yy peer<br>es ee ee Ne BREEDS So se nEae EEE<br>PP<br>I = 6.0AC<br>5 es ee ee NNNY ELLESEane |<br>SN 1.5 EEL Tor<br>0 ee A -60 -40 -20 0 20 40 60 80 100 120 140 160<br>25 50 75 100 125 150 T , Junction Temperature (°C)J<br>T , Case Temperature (°C)C<br>Fig. 4 - Maximum Collector Current vs. Fig. 5 - Typical Collector-to-Emitter Voltage<br>Case Temperature vs. Junction Temperature<br>10<br>Peeo<br>a ee ee ee ee el<br>1<br>eee<br>D = 0.50<br>c s ee neeey eeeerer<br>esis a eee ee ee<br>0.200.10 =a _— A P TT DM<br>0.1<br>0.05 t<br>1<br>0.020.01 SINGLE PULSE t 2<br>(THERMAL RESPONSE)<br>e t al Led 1. Duty factor D = t / t mows 1 2 |<br>AE At ee<br>0.01<br>0.00001 0.0001 0.001 0.01 0.1 1 10<br>t , Rectangular Pulse Duration (sec)1<br>CE<br>Maximum DC Collector Current (A V , Collector-to-Emitter Voltage (V)<br>thJC<br>Thermal Response (Z )<br>**----- End of picture text -----**<br> www.irf.com 4 **==> picture [434 x 196] intentionally omitted <==** **----- Start of picture text -----**<br> 2000 20<br>V = 0V, f = 1MHzGE<br>C = C + C , C SHORTEDies ge gc ce<br>C = C<br>res gc<br>1600 KI | C = C + Coes ce gc 16 2<br>s<br>| Pt<br>1200 ei | 12 i<br>800 Koo es 8 }<br>| =F<br>SE Pope<br>es<br>400 4<br>ee | 2A<br>SE || Fttt<br>0 ee A 0 py | |<br>1 10 100 0 10 20 30 40 50<br>V , Collector-to-Emitter Voltage (V)CE Q , Total Gate Charge (nC)g<br>C, Capacitance (pF)<br>GE<br>V , Gate-to-Emitter Voltage (V)<br>**----- End of picture text -----**<br> **==> picture [437 x 205] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>0.60 "760 R = 23G Ω ee ee ee eeee<br> V = 15VGE<br> V = 480VCC<br>0.58<br>E27) ja =12A TT Tr A, TI erPELEPPEEPPeeere® fttEtetttt== I = 24AC<br>0.56<br>Oe ee 1 t I = 12AC<br>2 Pf TA —2 A<br>0.54<br>I = 6.0AC<br>6g || [AT Ti fl. A foe ee ee<br>e 0.52 tLvt os Pett tT ty ert<br>ttt | 3 erry<br>0.50 epeePt A 0.1 OEE<br>-60 -40 -20 0 20 40 60 80 100 120 140 160<br>0 10 20 30 40 50 60<br>R , Gate Resistance (G Ω) T , Junction Temperature (°C)J<br>**----- End of picture text -----**<br> www.irf.com 5 **==> picture [434 x 553] intentionally omitted <==** **----- Start of picture text -----**<br> 2.0 1000<br> Ω<br>1.6<br>2 fy ss 100 A<br>co) a 2ol<br>pt 1.2 | fl | | O/ aeons en Va<br>ae 10 \<br>0.8<br>oy= A MP ee 410 AN |<br>vA<br>oO 2 A ee ee |<br>1<br>0.4<br>ee<br>pEA - tT | ) hee<br>0.0 ee ee ee A 0.1 aeAee ee |<br>0 10 20 30 1 10 100 1000<br>I , Collector-to-Emitter Current (A)C V , Collector-to-Emitter Voltage (V)CE<br>Fig. 11 - Typical Switching Losses vs. Fig. 12 - Turn-Off SOA<br>Collector-to-Emitter Current<br>100 ee<br>a ee ee ee eee<br>ee ee ee ee eee<br>poi ft | | |<br>|ipftithhudT ULL<br>tg<br>Pt tL A<br>T = 150°CJ<br>ff<br>10 T = 125°CJ Al<br>RRS<br>|| T = 25°CJ 2 ee<br>re eeeee<br>| | UT<br>pi ee<br>ee sees<br>1<br>0.4 0.8 1.2 1.6 2.0 2.4<br> Forward Voltage Drop - V (V)FM<br>C<br>I , Collector-to-Emitter Current (A)<br>F<br>Instantaneous Forward Current - I (A)<br>**----- End of picture text -----**<br> www.irf.com 6 **==> picture [203 x 543] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>| V = 200VR ee ee<br>EEE T = 125°CJ<br>T = 25°CJ<br>|(e s eesa ee a<br>a e<br>ee I = 24AF<br>I = 12AF<br>10<br>I = 6.0AF ane<br>ee eee<br>i os<br>ZZ<br>is QZ | | | | |<br>Boo<br>1<br>100 1000<br>di /dt - (A/µs)f<br>Fig. 15 - Typical Recovery Current vs. di;/dt<br>10000 ———S<br>= V = 200VR pa<br>T = 125°CJ<br>: T = 25°CJ REET<br>|| P| TT<br>eeCTeee<br>1000<br>I = 6.0AF<br>ee<br>e S 4aaA n e<br>OE<br>EEE I = 12AF<br>100 Go er<br>La Se<br>I = 24AF<br>|<br>= re<br>Ebr<br>10<br>100 1000<br>di /dt - (A/µs)f<br>IRRM<br>I - (A)IRRM<br>di(rec)M/dt - (A/µs)<br>**----- End of picture text -----**<br> **==> picture [258 x 542] intentionally omitted <==** **----- Start of picture text -----**<br> 160<br>V = 200VR<br>a T = 125°C eel J<br>T = 25°CJ<br>‘ ObpsJ<br>120 PT<br>I = 24AF<br>STAT<br>I = 12AF<br>80 10<br>al Seo 89 I = 6.0AF<br>Wainer Senabseias<br>a ane<br>40<br>ns ae| ry<br>——<br>0 es | ee<br>100 1000<br>di /dt - (A/µs)f<br>Fig. 14- Typical Reverse Recovery vs. di;/dt Fig.<br>600 — 10000<br>V = 200VR<br>T = 125°CJ<br>T = 25°CJ<br>Po<br>_<br>400 1000<br>|<br>I = 24AF<br>Wy<br>y<br>I = 12AF<br>200 node 100<br>I = 6.0AF sa<br>FE.<br>TT<br>0 10<br>100 1000<br>di /dt - (A/µs)f<br>t - (ns)rr I - (A)IRRM<br>RR<br>Q - (nC)<br>di(rec)M/dt - (A/µs)<br>**----- End of picture text -----**<br> www.irf.com 7 **==> picture [146 x 71] intentionally omitted <==** **----- Start of picture text -----**<br> Same type<br>device as<br>D.U.T.<br>80% 430µF<br>of Vce D.U.T.<br>**----- End of picture text -----**<br> **==> picture [186 x 163] intentionally omitted <==** **----- Start of picture text -----**<br> GATE VOLTAGE D.U.T.<br>10% +Vg<br>+Vg<br>DUT VOLTAGE<br>Vce<br>AND CURRENT<br>Vcc [10% Ic] 90% Ic Ipk<br>Ic<br>5% Vce<br>PANG td(on) tr<br>t2<br>Eon = Vce ie dt<br>t1<br>t1 t2<br>∫<br>**----- End of picture text -----**<br> **==> picture [188 x 499] intentionally omitted <==** **----- Start of picture text -----**<br> 90% Vge<br>+Vge<br>Vce<br>90% Ic<br>10% Vce<br>Ic<br>Ic<br>5% Ic<br>td(off) tf<br>t1+5µS<br>Eoff = Vce ic dt<br>t1<br>i<br>t1 t2<br>- Test Waveforms for Circuit of Fig. 18a,<br>Est, tayott), te<br>trr<br>trr<br>Qrr = id dt<br>Ic<br>tx<br>tx<br>10% Irr<br>10% Vcc<br>Vcc<br>Vpk<br>Irr<br>DIODE RECOVERY<br>WAVEFORMS<br>_ bevesteneeeeeeeneceneeebened<br>t4<br>Erec = Vd id dt<br>t3<br>DIODE REVERSE<br>RECOVERY ENERGY<br>t3 t4<br>∫<br>∫<br>∫<br>**----- End of picture text -----**<br> www.irf.com 8 **==> picture [191 x 176] intentionally omitted <==** **----- Start of picture text -----**<br> Vg GATE SIGNAL<br>DEVICE UNDER TEST<br>CURRENT D.U.T.<br>VOLTAGE IN D.U.T.<br>CURRENT IN D1<br>t0 t1 t2<br>**----- End of picture text -----**<br> Figure 18e. **==> picture [380 x 135] intentionally omitted <==** **----- Start of picture text -----**<br> RL = VCCICM<br>L D.U.T.<br>1000V V *c<br>50V<br>480µF<br>6000µF 0 - VCC<br> 100V<br>Pulsed Collector Current<br>Test Circuit<br>**----- End of picture text -----**<br> Figure 19. Figure 20. www.irf.com 9 ## Notes: - Repetitive rating: VGE=20V; pulse width limited by maximum junction tem- - perature (figure 20) - VCC=80%(VCES), VGE=20V, L=10µH, RG = 23Ω (figure 19) - Pulse width ≤ 80µs; duty factor ≤ 0.1%. - Pulse width 5.0µs, single shot. **==> picture [77 x 12] intentionally omitted <==** **----- Start of picture text -----**<br> Note: "P" in assembly line<br>position indicates "Lead-Free"<br>**----- End of picture text -----**<br> Data and specifications subject to change without notice. **IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 02/2010 www.irf.com 10
Updated at February 9, 2023
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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