IRG4BC30SPBF
IGBT, 34 A, 1.6 V, 100 W, 600 V, TO-220AB, 3 Pins
- Manufacturer: INFINEON
- Product type: Single IGBTs
- No. of Pins: 3Pins
- Product Range: IRG4
- Power Dissipation: 100W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-220AB
- Operating Temperature Max: 150°C
- Continuous Collector Current: 34A
- Collector Emitter Voltage Max: 600V
- Collector Emitter Saturation Voltage: 1.6V
| Delivery and price | |
|---|---|
| Units per pack | 1 |
| Price | 0.737 € |
| Current stock | 10+ |
| Lead time | 30 days |
## IRG4BC30SPbF
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C<br>_<br>Vces =<br>G VcE(on) typ. =<br>E @Voe = 15V,<br>n-channel<br>**----- End of picture text -----**<br>
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TO-220AB<br>**----- End of picture text -----**<br>
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∆ ∆<br>ence —[erert ctor Beaton vetge © [ 18 {—{ — [-V-[ver 0 oxtA<br>F Viences Tu | Temperature Coeff of Breakdown Votlage | — [075] — | VPC | Vee =OV, lo = 1 OmA<br>eee| — | 1.40] 1.6 | Ic =18A Voe = 15V<br>[Voce | — |145| — | lc = 18A, Ty= 150°C<br>∆ ∆<br>F Veet) Tu[Gate| TemperatureThresholdCoeffVottageof Threshold Votage|| 30— | -11— ||0— ||mVPC| Voe=Vec,lo=250WA =<br>=<br>fe [Forward Transconductance | 60 | 11 | — | S [Vee 100V,o=18A<br>P= = p20<br>“potent<br>P= [=<br>Eta” teeing aes —<br>[ies | GaletoEnitier Leakage Current [—[— [09] [2100] WA [Voc=#20V<br>Switching Characteristics @ Ty = 25°C (unless otherwise specified)<br>[Qg||| [Parameter] Total Gate Charge (turn-on) | Min.— || Typ.50 | | Max.| units]75 | lo = 18A__Conaitions<br>Qs. | Gate Collector Charge (turn-on) | — | 17] 26| | Voe=15V<br>[tao |Turn-OnDelayTimeSST — | 22 | —<br>=e T)=25°C Ω<br>fe «dt [FaliTime—SS~SCSCSCSCSS]<br>[Eon BO] SHO] | Voce = 15V, RG = 2<br>Loss____—~+|<br>[Ear= | TuTu r mn -O ffn Switching Loss _———*| —— [026]|345| —— |_|| mJ | EnergySeeFig. losses9, 10, include14 "ta<br>seytr [Turon Dey Tne f=esefat f= |<br>Ω<br>[tao |[RiseTimeTurn-Off DelayTime || —S|| 71 9 0|| —— | VorIo = 18A,= 15V, VeoRe = 480V= 23<br>Ex | Total Switching Loss _—~—S~S=«d [6.55] — | mJ | See Fig. 11, 14<br>[te | internal Emitter Inauctance | — | 75| — | nH | Measured 5mm from package<br>[Ces | Input Capacitance SSSC*dtC OO] — || Ve = OV<br>=30V See Fig.7<br>eeCres Reverse Transfer Capacitance — 13 — oef =1.0MHz<br>Notes:<br>® Repetitive rating; Vee = 20V, pulse width limited by<br>max. junction temperature. ( See fig. 13b )<br>≤ ≤<br>® Voc = 80%(Voes), Vor = 20V, L = 10HH, Ro=23 Ω , @® Pulse width 80us; duty factor 0.1%.<br>**----- End of picture text -----**<br>
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50<br>For both: Triangular wave:<br>Duty cycle: 50%<br>40 |I| E T = 125°C PT J Tete Ey | | I PT Tet<br>T = 90°Csink<br>Gate drive as specified<br>Power Dissipation = W Clamp voltage:<br>80% of rated<br>x 30 PN ai<br>= | | Ba! TTT y<br>o Square wave: ceeree<br>60% of rated<br> voltage<br>xo)bo 20 IN= EE— E<br>I<br>[s 10 eAn u [Pos“AR<br>Ideal diodes<br>0 I * EHii<br>0.1 1 Ee 10 HE 100<br>f, Frequency (kHz)<br>Fig. 1 - Typical Load Current vs. Frequency<br>(Load Current = Ipms of fundamental)<br> 100 100<br>T = 25 CJ o<br>ee4 Zoe T = 150 CJ o eee Pi T = 150 CJ e o | [Levy] r| | | |<br> 10<br>7A fi Ceo"Corn p | i Lae|pe| |<br> 10<br>T = 25 CJ o<br>ee | AZ T<br>ee ee 1 / / ae<br>omens oe<br>rr ee e e eee<br>V = 15VGE V = 50VCC<br> 1 1 P| | 20µs PULSE WIDTH 10 0.1 5 fA}A 6 | | 7 y 5µs PULSE WIDTH8 9 10<br>V , Collector-to-Emitter Voltage (V)CE V , Gate-to-Emitter Voltage (V)GE<br>C C<br>I , Collector-to-Emitter Current (A) I , Collector-to-Emitter Current (A)<br>**----- End of picture text -----**<br>
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35 3.0<br>V = 15VGE<br>80 us PULSE WIDTH<br>PSECPN EtEy EE E<br>30 ee PEEP EEE<br>25 eea ee ee 2.5 EEE er I = AC 36 —<br>20<br>a ON pity<br>2.0<br>15<br>oeee EEEE EEEE<br>I = AC 18<br>10<br>prep ee 1.5<br>PF | | | tT PN| tl | hd LY PETE =tT<br>5 I = C<br>ee OOO 0 OO a<br>0 ee 1.0 PETEa eeea<br>25 50 75 100 125 150 -60 -40 -20 0 20 40 60 80 100 120 140 160<br>T , Case Temperature ( C)C ° T , Junction Temperature ( C)J °<br>Fig. 4 - Maximum Collector Current vs. Case Fig. 5 - Typical Collector-to-Emitter Voltage<br>Temperature vs. Junction Temperature<br> 10<br>a<br>P| TE TT ET TE ET ET<br> 1 |<br>D = 0.50<br> 0.20<br>eT ee ——__.e ee eee<br> 0.10 St PDM<br>0.1 0.05 t1<br> 0.02 t2<br> 0.01 as SINGLE PULSE CO<br>(THERMAL RESPONSE) Notes:<br>1. Duty factor D = t / t1 2<br>eo 2. Peak TJ = PDM x Z thJC + TC<br>0.01<br>0.00001 0.0001 0.001 0.01 0.1 1<br>t , Rectangular Pulse Duration (sec)1<br>Maximum DC Collector Current(A) CE<br>V , Collector-to-Emitter Voltage(V)<br>thJC<br>Thermal Response (Z )<br>**----- End of picture text -----**<br>
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2000 20<br>VGE = 0V, f = 1MHz VCC = 400V<br>Cies = Cge + Cgc , C SHORTEDce I C = 18A<br>Cres = Cgc<br>| Coes = Cce + Cgc 16 L ET<br>TT Po<br>1500<br>PS ) EEE<br>Cies 12<br>1000 i fe eee SEGGG0087400CPT<br>8<br>INTE TTT pitt tae<br>a) al yA<br>500<br>Coes 4<br>Cres<br>e K 7-COECE<br>0 i ell 0 ARGS ESESEEEe<br> 1 10 100 0 10 20 30 40 50 60<br>V , Collector-to-Emitter Voltage (V)CE Q , Total Gate Charge (nC)G<br>Fig. 7 - Typical Capacitance vs. Fig. 8 - Typical Gate Charge vs.<br>Collector-to-Emitter Voltage Gate-to-Emitter Voltage<br>3.80 100<br>V = 480VCC R = 23OhmG Ω<br>V = 15VT = 25 CJGE ° V = 15VV = 480VGECC<br>3.76 I = 18AC EEE PE<br>o£ Pttty| ae :feeeeee I = AC ea 36 e<br> 10<br>3.72 HE EB) BERSEEOeeeeeee C I = AC e 18 e<br>I = C<br>3.68<br>PTErrly | tt TTP e<br> 1<br>3.64 pitt tT ET Tt a ea al al a be Ree eee ce<br>PTT TT TT Ty G0 G8 Bee On Oe<br>3.60 Pit tT tT | Et 0.1 OO REE eo ee<br>0 10 20 30 40 50 -60 -40 -20 0 20 40 60 80 100 120 140 160<br>R , Gate Resistance (Ohm)G Ω T , Junction Temperature ( C )J °<br>C, Capacitance (pF)<br>GE<br>V , Gate-to-Emitter Voltage (V)<br>Total Switching Losses (mJ) Total Switching Losses (mJ)<br>**----- End of picture text -----**<br>
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15.0<br>R = 23G Ωhm<br>T = 150 CJ °<br>V = 480VCC<br>12.0 V = 15VGE<br>“TT“unTI<br>e Zee<br>9.0 TT TT IA TTL<br>CEPA<br>6.0<br>TITY ELLE<br>3.0 Pt tT Tt ET tt<br>0.0 Pt tT ET ey ty et<br>0 10 20 30 40 50<br>I , Collector-to-emitter Current (A)C<br>Total Switching Losses (mJ)<br>**----- End of picture text -----**<br>
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1000<br>V = 20VGE<br>T = 125 CJ o<br>a ||<br> 100<br>a<br>eee certaaSai<br>=H at<br> 10<br>ce<br>|<br>SAFE OPERATING AREA<br> 1 eee el<br> 1 10 100 1000<br>V , Collector-to-Emitter Voltage (V)CE<br>C<br>I , Collector-to-Emitter Current (A)<br>**----- End of picture text -----**<br>
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RL = VCCICM<br>L D.U.T.<br>V *<br>C<br>50V<br>1000V 0 - VCC 480µF<br>(0)<br>(2)<br>* Driver same type as D.U.T.; Vc = 80% of Vce(max)<br>* Note: Due to the 50V power supply, pulse width and inductor Pulsed Collector Current<br> will increase to obtain rated Id.<br>Test Circuit<br>**----- End of picture text -----**<br>
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IC<br>000 NN<br>L<br>Driver* D.U.T.<br>VC<br>50V<br>1000V<br>T (IE) Ch<br>®<br>(©)<br>J \<br>90%<br>10%<br>VC<br>90%<br>ee (Toy td(off) 2<br>IC 5%10%<br>tr tf<br>t d(on) t=5µs<br>Eon Eoff<br>E = (E +E )ts on off<br>**----- End of picture text -----**<br>
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Note: "P" in assembly line<br>position indicates "Lead-Free"<br>**----- End of picture text -----**<br>
Data and specifications subject to change without notice.
**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 01/2010
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Updated at February 9, 2023
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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