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IRG4BC30KDPBF
IGBT, 28 A, 2.21 V, 100 W, 600 V, TO-220AB, 3 Pins
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single IGBTs
- No. of Pins: 3Pins
- Product Range: IRG4
- Power Dissipation: 100W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-220AB
- Operating Temperature Max: 150°C
- Continuous Collector Current: 28A
- Collector Emitter Voltage Max: 600V
- Collector Emitter Saturation Voltage: 2.21V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 1.5 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
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Max. | units| Conditions<br>[Q, | Total Gate Charge (turn-on) | — | 67 | 100. lc = 16A<br>Qj | Gate= Collector Charge turn-on) | — | 25 | 37 |_| Voe=18V<br>fran<br>SSS~—C—sSS<br>[taomfh ~«dRise TimeBoag Te a YT AT — | | y= 2B<br>Ω<br>ft | Turn-Off DelayTime | — | 160 | 250 | lo = 16A, Voc = 480V<br>[Eon | FalTime | = | 80 | 120 Vor = 15V, Re = 23<br>Loss|<br>[Eo | Turn-O ffn SwitchSwitch ing Loss | — [0. 60|58] —— || ma | Ea n ergyd diode lossr e verses includerecovery "tail"<br>tsc Short Circuit Withstand Time 10 Us | Voc = 360V, Ty = 125°C<br>Ω<br>aon | Turm-On DelayTime —=S~—~sC * | — | | T= 180°C, See Fig. 11,14<br>ft [RiseTime | | 2 | lc = 16A, Voc = 480V<br>Ω<br>**----- End of picture text -----**<br> www.irf.com 2 **==> picture [435 x 493] intentionally omitted <==** **----- Start of picture text -----**<br> 16 ee<br>eeoo o For both: ail<br>14<br>— Duty cycle: 50%<br>T = 125°CJ<br>12 T = 90°Csink<br>Gate drive as specified<br>10 Peee Power Dissipation = it W Hil<br>Square wave:<br>8 60% of rated<br>P= IN T E<br> voltage<br>| TTT<br>6<br>I<br>|| HT | TTT ENN EET<br>4<br>Ideal diodes<br>Py Fein EE eS<br>2<br>Ar UUTTP<br>0 pb<br>0.1 1 10 100<br>f, Frequency (KHz)<br>Fig. 1 - Typical Load Current vs. Frequency<br>(Load Current = Ipms of fundamental)<br> 100 100<br>T = 25 CJ o<br>T = 150 CJ o<br>e y A aa ee T = 150 CJ o ee a eee<br> 10 ae A -—aee ME e 10 pow A4A<br>oe ee<br>ee a eeee<br>T = 25 CJ o<br> 1 |(eel ff | 1 P fpT pTf<br>——— e e<br>ee ee ee oe oe oe rere<br>V = 15VGE V = 50VCC<br>0.1 1 PTe e 20µs PULSE WIDTH 10 0.1 5 jf a | 10 5µs PULSE WIDTH 15<br>V , Collector-to-Emitter Voltage (V)CE V , Gate-to-Emitter Voltage (V)GE<br>LOAD CURRENT (A)<br>I , Collector-to-Emitter Current (A)C I , Collector-to-Emitter Current (A)C<br>**----- End of picture text -----**<br> www.irf.com 3 **==> picture [436 x 477] intentionally omitted <==** **----- Start of picture text -----**<br> 30 4.0<br>V = 15VGE<br>RT TELELELI 80 us PULSE WIDTH TTT I = AC 32 T]<br>25 a see. a4<br>20 3.0<br>PEIN B S<br>PHASE Sater<br>15 I = AC 16<br>SEeEEewenn CU E<br>P “pp ee<br>10 2.0 I = C<br>po<br>5<br>Pf tt ttN f e CCCP.e EETTL<br>a PEE EEEEEE<br>0 1.0<br>25 50 75 100 125 150 -60 -40 -20 0 20 40 60 80 100 120 140 160<br>T , Case Temperature ( C)C ° )<br>Fig. 4 - Maximum Collector Current vs. Case Fig. 5 - Typical Collector-to-Emitter Voltage<br>Temperature vs. Junction Temperature<br> 10<br>po<br>aee<br> 1 NN eel<br>D = 0.50<br>0.20<br>e er<br>ee<br>0.10 PDM<br>0.1 0.05 t1<br>0.02 t2<br>0.01 SINGLE PULSE<br>(THERMAL RESPONSE) Notes:<br>Ratt HE 1. Duty factor D = t / t1 2<br>ee ell 2. Peak TJ = PDM x Z thJC + TC<br>0.01<br>0.00001 0.0001 0.001 0.01 0.1 1<br>t , Rectangular Pulse Duration (sec)1<br>CE<br>Maximum DC Collector Current(A) V , Collector-to-Emitter Voltage(V)<br>thJC<br>Thermal Response (Z )<br>**----- End of picture text -----**<br> www.irf.com 4 **==> picture [436 x 481] intentionally omitted <==** **----- Start of picture text -----**<br> 1500 VGE = 0V, f = 1MHz 20 VCC = 400V<br>Cies = Cge + Cgc , C SHORTEDce I C = 16A<br>Cres = Cgc<br>1200 Waa Coes = Cce + Cgc 16 E P<br>REel<br>900 NeSS Cies 12 o e|<br>a ee | | | | | Et<br>| ell Pit| de<br>600 TT 8 Pfft<br>PNET ee ed<br>300 Ke Coes 4 | tt tt<br>DOE Cres geSl f/|yt tt| | |tt| |tt<br>0 e e lll 0 P| t | | | dt |<br> 1 10 100 0 20 40 60 80<br>V , Collector-to-Emitter Voltage (V)CE Q , Total Gate Charge (nC)G<br>Fig. 7 - Typical Capacitance vs. Fig. 8 - Typical Gate Charge vs.<br>Collector-to-Emitter Voltage Gate-to-Emitter Voltage<br>1.50 10<br>V = 480VCC R = G Ωm<br>V = 15VT = 25 CJGE ° V = 15VV = 480VGECC I = AC 32<br>1.40 I = 16AC PtrT TT]tt THTey tt pe<br>I = AC 16<br>cope PPP<br>1.30<br>L L<br> 1<br>I = C<br>1.20 Pt | pee eGR G0 G8 >> -- onOe<br>1.10 aaLT |ry |ry aa foeoeee ee<br>PEEP} SOUREREGBeeeeeeeeeeee<br>1.00 PE tT tT tt 0.1 LEE EEE<br>0 10 20 30 40 50 -60 -40 -20 0 20 40 60 80 100 120 140 160<br>R Ω )hm) T , Junction Temperature ( C )J °<br>C, Capacitance (pF)<br>GE<br>V , Gate-to-Emitter Voltage (V)<br>Total Switching Losses (mJ) Total Switching Losses (mJ)<br>**----- End of picture text -----**<br> www.irf.com 5 **==> picture [197 x 192] intentionally omitted <==** **----- Start of picture text -----**<br> 5.0 R =G Ωm<br>T = 150 CJ °<br>V = 480VCC<br>4.0 V = 15VGE<br>Seen<br>3.02.0 ceoA<br>1.0<br>2 4ene<br>0.0<br>EEE Err<br>0 8 16 24 32 40<br>I , Collector-to-emitter Current (A)C<br>Total Switching Losses (mJ)<br>**----- End of picture text -----**<br> **==> picture [202 x 191] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>V = 20VGE<br>T = J<br>OA | |<br> 10<br>RE<br>FEL I A a<br>SAFE OPERATING AREA<br> 1<br>ee TET<br> 1 10 100 1000<br>V , Collector-to-Emitter Voltage (V)CE<br>C<br>I , Collector-to-Emitter Current (A)<br>**----- End of picture text -----**<br> **==> picture [175 x 284] intentionally omitted <==** **----- Start of picture text -----**<br> 100 oe oe<br>ee ee ee ee eee<br>a ee ee ee ee<br>Pot<br>Pipfti | hud}ULL<br>tg<br>rae’ T = 150°CJ AE"/,<br>10 T = 125°CJ<br>FP Al<br>= T = 25°CJ 2<br>p | | | Tet<br>PotTT<br>P| |ET<br>CARE<br>ae<br>1<br>0.4 0.8 1.2 1.6 2.0 2.4<br> Forward Voltage Drop - V (V)FM<br>F<br>Instantaneous Forward Current - I (A)<br>**----- End of picture text -----**<br> www.irf.com 6 **==> picture [432 x 519] intentionally omitted <==** **----- Start of picture text -----**<br> 160 100<br>V = 200VR | V = 200VR re<br>a T = 125°C een J SF T = 125°CJ LEE<br>T = 25°CJ T = 25°CJ<br>Obps i| = FEEes a<br>120 Se | | J e se eee<br>I = 24AF<br>ST F e I = 24AF o<br>I = 12AF<br>I = 12AF<br>80 10<br>I = 6.0AF I = 6.0AF<br>ROG | ee e eee<br>inn OSS ae Zann<br>a anne Eo<br>40<br>Ss | OP<br>_.-—: FP<br>0 1<br>Ss | ee<br>100 1000 100 1000<br>di /dt - (A/µs)f di /dt - (A/µs)f<br>14 - Typical Reverse Recovery vs. di;/dt Fig. 15 - Typical Recovery Current vs. dir/dt<br>600 || 10000 pe<br>V = 200VR J V = 200VR pe]<br>T = 125°CJ | T = 125°CJ Pp|<br>T = 25°CJ _ |ee T = 25°CJ ee P|<br>400 1000<br>I = 6.0AF<br>ee4. Ane<br>eeen a ae<br>=| ee<br>4 I = 24AF PS eB<br>| [A]<br>I = 12AF<br>I = 12AF ” a aaeeeel<br>200 100<br>oes GEE |<br>I = 24AF<br>I = 6.0AF a] a n ne<br>ae — es<br>0 =P Trl 10 eS§=EREHHT eceee<br>100 1000 100 1000<br>di /dt - (A/µs)f di /dt - (A/µs)f<br>t - (ns)rr I - (A)IRRM<br>RR<br>Q - (nC)<br>di(rec)M/dt - (A/µs)<br>**----- End of picture text -----**<br> www.irf.com 7 **==> picture [146 x 71] intentionally omitted <==** **----- Start of picture text -----**<br> Same type<br>device as<br>D.U.T.<br>80% 430µF<br>of Vce D.U.T.<br>**----- End of picture text -----**<br> **==> picture [187 x 164] intentionally omitted <==** **----- Start of picture text -----**<br> GATE VOLTAGE D.U.T.<br>10% +Vg<br>+Vg<br>DUT VOLTAGE<br>Vce<br>AND CURRENT<br>Vcc [10% Ic] 90% Ic Ipk<br>Ic<br>RAN td(on) tr 5% Vce G<br>t2<br>Eon =<br>t1<br>t1 t2<br>**----- End of picture text -----**<br> **==> picture [186 x 194] intentionally omitted <==** **----- Start of picture text -----**<br> 90% Vge<br>+Vge<br>Vce<br>90% Ic<br>10% Vce<br>Ic<br>Ic<br>5% Ic<br>td(off) tf<br>t1+5µS<br>Eoff =<br>t1<br>t1 t2<br>**----- End of picture text -----**<br> **==> picture [179 x 193] intentionally omitted <==** **----- Start of picture text -----**<br> trr<br>trr<br>Ic — —! Qrr = t<br>tx<br>tx<br>10% Irr<br>10% Vcc<br>Vcc<br>Vpk<br>Irr<br>DIODE RECOVERY<br>WAVEFORMS<br>a eveeecenncsseeeernnnesstecen<br>t4<br>Erec =<br>t3<br>DIODE REVERSE<br>RECOVERY ENERGY<br>t3 t4<br>**----- End of picture text -----**<br> www.irf.com 8 **==> picture [191 x 176] intentionally omitted <==** **----- Start of picture text -----**<br> Vg GATE SIGNAL<br>DEVICE UNDER TEST<br>CURRENT D.U.T.<br>‘<br>’<br>:<br>L171 i.<br>VOLTAGE IN D.U.T.<br>alan't'<br>: CURRENT IN D1<br>‘<br>:<br>' 1<br>1 1<br>Ut!<br>t0 t1 t2<br>**----- End of picture text -----**<br> **==> picture [204 x 50] intentionally omitted <==** **----- Start of picture text -----**<br> L D.U.T.<br>1000V V *c<br>50V<br>6000µF<br> 100V<br>**----- End of picture text -----**<br> **==> picture [133 x 135] intentionally omitted <==** **----- Start of picture text -----**<br> RL = VCCICM<br>480µF<br>0 - VCC<br>Pulsed Collector Current<br>Test Circuit<br>**----- End of picture text -----**<br> www.irf.com 9 ## Notes: - Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature - (figure 20) - VCC=80%(VCES), VGE=20V, L=10µH, RG= 23Ω (figure 19) - Pulse width ≤ 80µs; duty factor ≤ 0.1%. - Pulse width 5.0µs, single shot. **==> picture [68 x 11] intentionally omitted <==** **----- Start of picture text -----**<br> Note: "P" in assembly line<br>position indicates "Lead-Free"<br>**----- End of picture text -----**<br> Data and specifications subject to change without notice. **IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 02/2010 www.irf.com 10
Updated at February 9, 2023
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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