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IRG4BC30FDPBF
IGBT, 31 A, 1.9 V, 100 W, 600 V, TO-220AB, 3 Pins
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single IGBTs
- No. of Pins: 3Pins
- Product Range: IRG4
- Power Dissipation: 100W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-220AB
- Operating Temperature Max: 150°C
- Continuous Collector Current: 31A
- Collector Emitter Voltage Max: 600V
- Collector Emitter Saturation Voltage: 1.9V
| Delivery and price | |
|---|---|
| Units per pack | 10 |
| Price | 2.45 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE ## **Features** . Fast: Optimized for medium operating frequencies (1-5 kHz in hard switching, >20kHz in resonant mode). Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 IGBT co-packaged with HEXFRED[TM] ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations Industry standard TO-220AB package Lead-Free **==> picture [52 x 81] intentionally omitted <==** **----- Start of picture text -----**<br> C<br>G<br>E<br>**----- End of picture text -----**<br> **==> picture [49 x 10] intentionally omitted <==** **----- Start of picture text -----**<br> n-channel<br>**----- End of picture text -----**<br> TO-220AB **==> picture [4 x 28] intentionally omitted <==** **----- Start of picture text -----**<br> θ<br>θ<br>θ<br>**----- End of picture text -----**<br> www.irf.com 1 **==> picture [423 x 351] intentionally omitted <==** **----- Start of picture text -----**<br> [Verces ∆ ∆ _ | Collector-o-EmitterParameter Breakdown VolageG| Min.600 | Typ.—~ ||Max.-—- | UnitsV_| Vor Conditions<br>[ | VcE(on)Vines! Ty | Collector-to-Emitter Temperature Coe. of Saturation Breakdown Voltage Votage||aa----~-- [0:69|1.59 | [= 1.8 |[VPC | Vee Ic Ic =31A =17A== OV,OV, lc Ic == 1.0mA250HA See Voe Fig. = 15V 2,5<br>[Vee | ---- [1.70 | ---- | Ic = 17A, Ty = 150°C<br>∆ ∆<br>Vein T] Temperature Coeff. of Threshold Vottagd = | -11 | ---- |mVPC| Voz = Vee, lo = 250HA<br>fae | Forward Transconductance © | 6.1 | 10 [=| S | Voe= 100V, lo=17A<br>IcEs Zero Gate Voltage Collector Current |hee---- | ---- [2500 | | Voe = OV, V ocece = 60 0V,0V Ty = 150°C<br>F VeM | Diode Gate Threshold Forward Voltage Vottage Drop [3.0|| -------- ||[==1.4/4.7]1.3 [60]| 1.6 | Vv|| I Voe=cc=12A =12A,VousTy== 150°C See Fig. 13<br>IcES Gate-to-Emitter Leakage Current ---- | ---- [+100] nA | Vee = +20V<br>Switching Characteristics @ Ty = 25°C (unless otherwise specified)<br>[Q, Parameter Min.| Typ. | Max.| Units Conditions<br>[age | Total Gate Charge (turn-on) |---| 514 | 77 | c= 17A<br>|Qy. | Gate - Emitter Charge (turn-on) |---| 7.9] 12 | nC | Voc=400V See Fig. 8<br>[ton | Gate - Collector Charge (turn-on) | ----| 19 | 28 | Vor = 15V<br>ft | Turn-OnDelayTime | ~~ | 42 |---| T)=25°C<br>Ω<br>[tam | RiseTime | | 26 | |) ons | Ie = 17, Veo = 480V<br>jy | Turn-Off DelayTime | === | 230 350] | Ve = 18V, Re = 23<br>[Eon | FallTime | 160] 230] Energy losses include "tail" and<br>[Es | ‘TT ur n-On-Off SwitchSwitch ing L oss|oss|-- --- | 01 . 39]63 - —- -- || mJ diode reverse recovery.<br>Loss|<br>[Es[ton | Total Switching ~~ | 2.02 3.9 | | See Fig. 9, 10, 11, 18<br>ft | Turn-OnDelayTime | ~~ | 42 | | T= 150°C, See Fig. 9, 10, 11, 18<br>Ω<br>[tam | RiseTime | 27 |] ons | Ic = 17A, Voc = 480V<br>**----- End of picture text -----**<br> 2 **==> picture [62 x 9] intentionally omitted <==** **----- Start of picture text -----**<br> www.irf.com<br>**----- End of picture text -----**<br> **==> picture [435 x 488] intentionally omitted <==** **----- Start of picture text -----**<br> 20<br>Duty cycle: 50%<br>eee T = 125°CJ [TT TT<br>T = 90°Csink<br>16 a ee Gate drive as specified ee<br>Turn-on losses include<br>effects of reverse recovery<br>Power Dissipation = 21W<br>e~ 12 P| S NG — ee<br>60% of rated<br>: NN<br> voltage<br>8 8 TN<br>: I<br>3 At Ne<br>40 u t aiN<br>0.1 1 10 100<br>f, Frequency (kHz)<br>Fig. 1 - Typical Load Current vs. Frequency<br>(Load Current = Ips of fundamental)<br>1000 1000<br>rr ee ee eee eee Ppt EE TT EP<br>T = 25°CJJ<br>100 100<br>———— pe |||<br>T = 150°CJJ T = 150°CJ<br>Aa A A AT<br>a) ee ———<br>p O Pit i yvA<br>T = 25°CJ<br>10 10<br>V = 15VGEGE V = 50VCC<br>1 eldJo20us PULSE WIDTHJo20us PULSE WIDTH20us PULSE WIDTH PULSE WIDTH WIDTH A 1 ZV}Vy ft tits+ TV eseeurses PULSE WIDTHwore<br>1 10 5 6 7 8 9 10 11 12 13<br>V , Collector-to-Emitter Voltage (V)CECE V , Gate-to-Emitter Voltage (V)GE<br>I , Collector-to-Emitter Current (A)CC I , Collector-to-Emitter Current (A)C<br>**----- End of picture text -----**<br> **==> picture [203 x 199] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>rr ee ee eee eee<br>T = 25°CJJ<br>100<br>———— pe<br>T = 150°CJJ<br>Aa<br>a) ee<br>p O<br>10<br>V = 15VGEGE<br>1 eldJo20us PULSE WIDTHJo20us PULSE WIDTH20us PULSE WIDTH PULSE WIDTH WIDTH<br>1 10<br>V , Collector-to-Emitter Voltage (V)CECE<br>I , Collector-to-Emitter Current (A)CC<br>**----- End of picture text -----**<br> www.irf.com 3 **==> picture [435 x 475] intentionally omitted <==** **----- Start of picture text -----**<br> 40 TOOT S) Vv = 15V 2.5 «e= e<br>I = 34AC<br>P P |<br>30<br>Sopp) 2.0 pec an<br>20 Ge Leer<br>Se ee ee<br>I = 17AC<br>caenen wen 1.5 pp<br>10<br>CPN] pe es<br>I = 8.5AC<br>acne sa<br>0 PEN 1.0 LL<br>25 50 75 100 125 150 -60 -40 -20 0 20 40 60 80 100 120 140 160<br>T , Case Temperature (°C)C T , Junction Temperature (°C)J<br>Fig. 4 - Maximum Collector Current vs. Case Fig. 5 - Typical Collector-to-Emitter Voltage<br>Temperature vs. Junction Temperature<br>10<br>Se aa a a TT TT<br>aee el<br>1<br>ee<br>D = 0.50<br>B a eS ae<br>0.20<br>0.10 PDM<br>0.1 rrr TTTT<br>= 0.05 |_| LL ee + t1<br>a 0.020.01 SINGLE PULSE a t2<br>(THERMAL RESPONSE)<br>e e ened Genes 1. Duty factor D = t / t mores 1 2<br>RE c c<br>0.01<br>0.00001 0.0001 0.001 0.01 0.1 1 10<br>t , Rectangular Pulse Duration (sec)1<br>Maximum DC Collector Current (A) CE<br>V , Collector-to-Emitter Voltage (V)<br>thJC<br>Thermal Response (Z )<br>**----- End of picture text -----**<br> www.irf.com 4 **==> picture [207 x 196] intentionally omitted <==** **----- Start of picture text -----**<br> 2000<br>1600 le eae<br>| NET TTT<br>s<br>1200 ae |<br>K A<br>800<br>DN<br>es<br>400 lll<br>s<br>~IN<br>0 ell<br>1 10 100<br>V , Collector-to-Emitter Voltage (V)CE<br>C, Capacitance (pF)<br>**----- End of picture text -----**<br> **==> picture [197 x 198] intentionally omitted <==** **----- Start of picture text -----**<br> 20<br>16 pote<br>Pot tt|<br>12 Po<br>Pity PA<br>8<br>pot te |<br>4 Poe<br>0 peti tf | ft}<br>0 10 20 30 40 50 60<br>Q , Total Gate Charge (nC)g<br>GE<br>V , Gate-to-Emitter Voltage (V)<br>**----- End of picture text -----**<br> **==> picture [434 x 202] intentionally omitted <==** **----- Start of picture text -----**<br> 2.20 er 10 EREEEEREREs<br>2 fr is Cee ee eee ReeenEe I = 34AC<br>E 2.10 fl ret fot = P T<br>, - is ptf pe pep pp teeta |<br>I = 17AC<br>s | | | FT] ee e<br>ef 2.00 a im) 1 I = 8.5AC<br>to bet j t<br>= | || ‘ Fanaa ea a)=2B enEEREa BPeee ~~. 28 eee eee r eeeeee<br>1.90 PA} FP ae Oeeee<br>as EEE ET TE TEtity<br> R = 23 G Ω<br> V = 15VGE<br>1.80 a ee A 0.1 A V = 480VCC<br>0 20 40 60 80 -60 -40 -20 0 20 40 60 80 100 120 140 160<br>R , Gate Resistance (G Ω ) T , Junction Temperature (°C)J<br>**----- End of picture text -----**<br> www.irf.com 5 **==> picture [433 x 522] intentionally omitted <==** **----- Start of picture text -----**<br> 8.0 1000<br>OT = 150°C 1 = 125°CU Hy<br>= / es<br>apse 6.0 |VY E ee<br>100<br>a 7 2)<br>> 4.0 EDeeeee<br>= PL PY fd ey A ee |<br>10<br>|a 2.0 If} - 2ALM——|ee See<br>g vA et eet eet<br>c | | 4an| ||| || SEa | ee<br>0.0 ee A 1 PTI ee PETee<br>0 10 20 30 40 1 10 100 1000<br>I , Collector-to-Emitter Current (A)C V , Collector-to-Emitter Voltage (V)CE<br>Fig. 11 - Typical Switching Losses vs. Fig. 12 - Turn-Off SOA<br>Collector-to-Emitter Current<br>100 ee ee<br>a ee ee ee ee<br>en ee ee eee ee<br>Pot ft Tt<br>Hf of | ty<br>Pf ft<br>tL LA<br>T = 150°CJ<br>ff<br>10 T = 125°CJ<br>FS A IRSl<br>= T = 25°CJ 7<br>pot | | EAA<br>ene<br>PthE<br>LL<br>1<br>0.4 0.8 1.2 1.6 2.0 2.4<br> Forward Voltage Drop - V (V)FM<br>C<br>I , Collector-to-Emitter Current (A)<br>F<br>Instantaneous Forward Current - I (A)<br>**----- End of picture text -----**<br> www.irf.com 6 **==> picture [432 x 519] intentionally omitted <==** **----- Start of picture text -----**<br> 160 100<br>V = 200VR V = 200VR<br>=] T = 125°CJ Fo T = 125°CJ<br>T = 25°CJ T = 25°CJ<br>Obps |(Seesa ee<br>120<br>SCJ pL<br>I = 24AF<br>|TL I = 24AF Cit<br>wt I = 12AF «= EH<br>80 zs 4 10 I = 12AF Ss betes gs<br>*en [a] ee<br>I = 6.0AF<br>I = 6.0AF<br>ROGWot | |t g<br>BE<br>a [Saraks] ote ss Ce anes<br>40<br>a OO<br>_ | BP<br>0 Ss nl ee 1<br>100 1000 100 1000<br>di /dt - (A/µs)f di /dt - (A/µs)f<br>Fig. 14 - Typical Reverse Recovery vs. di;/dt Fig. 15 - Typical Recovery Current vs. di;/dt<br>600 10000<br>V = 200VR J V = 200VR pe]<br>T = 125°CJ T = 125°CJ<br>= T = 25°CJ a|| T = 25°CJ aeee e<br>400 _ 1000 |rtee<br>I = 6.0AF<br>—————a oo ae<br>enn es asalenae<br>; Sanne<br>I = 24AF<br>NY ane<br>I = 12AF<br>I = 12AF > | A se<br>200 mao 100 G EE<br>I = 24AF<br>I = 6.0AF sa LE ——— aes<br>L e — es<br>Sa 2ae<br>— es ee<br>0 10<br>100 1000 100 1000<br>SPT di /dt - (A/µs)f = RRHHH di /dt - (A/µs)f<br>t - (ns)rr I - (A)IRRM<br>RR<br>Q - (nC)<br>di(rec)M/dt - (A/µs)<br>**----- End of picture text -----**<br> www.irf.com 7 **==> picture [417 x 144] intentionally omitted <==** **----- Start of picture text -----**<br> Same type<br>device as<br>D.U.T.<br>90%<br>Vge 10%<br>80%of Vce 430µF D.U.T. VC 90%<br>td(off)<br>IC 5%10%<br>tr tf<br>td(on) t=5µs<br>Fig. [18a] [-] [Test] [Circuit] [for] [Measurement] [of] we Eon : a Eoff _<br>E = (E +E )ts on off<br>**----- End of picture text -----**<br> **==> picture [186 x 164] intentionally omitted <==** **----- Start of picture text -----**<br> GATE VOLTAGE D.U.T.<br>10% +Vg<br>+Vg<br>DUT VOLTAGE<br>Vce<br>AND CURRENT<br>Vcc [10% Ic] 90% Ic Ipk<br>Ic<br>PANG td(on) tr 5% Vce<br>t2<br>Eon = Vce ie dt<br>t1<br>t1 t2<br>∫<br>**----- End of picture text -----**<br> **==> picture [179 x 191] intentionally omitted <==** **----- Start of picture text -----**<br> trr<br>trr<br>Qrr = id dt<br>Ic<br>tx<br>tx<br>10% Irr<br>10% Vcc<br>Vcc<br>Vpk<br>Irr<br>DIODE RECOVERY<br>WAVEFORMS<br>_ foeeeeeececcccssseeecbeced<br>t4<br>Erec = Vd id dt<br>t3<br>DIODE REVERSE<br>RECOVERY ENERGY<br>t3 t4<br>∫<br>∫<br>**----- End of picture text -----**<br> www.irf.com 8 **==> picture [191 x 176] intentionally omitted <==** **----- Start of picture text -----**<br> Vg GATE SIGNAL<br>DEVICE UNDER TEST<br>CURRENT D.U.T.<br>VOLTAGE IN D.U.T.<br>CURRENT IN D1<br>t0 t1 t2<br>**----- End of picture text -----**<br> Figure 18e. **==> picture [376 x 135] intentionally omitted <==** **----- Start of picture text -----**<br> RL = VCCICM<br>L D.U.T.<br>1000V V *c 480µF<br>50V 0 - VCC<br>6000µF<br> 100V<br>Pulsed Collector Current<br>Test Circuit<br>**----- End of picture text -----**<br> Figure 19. Figure 20. www.irf.com 9 **==> picture [64 x 11] intentionally omitted <==** **----- Start of picture text -----**<br> Note: "P" in assembly line<br>position indicates "Lead-Free"<br>**----- End of picture text -----**<br> ## Notes: %( Vces), Voe=20V, L=10UH, Rg = 23 Ω ≤ ≤ . Data and specifications subject to change without notice. **IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 01/2010 www.irf.com 10
Updated at February 9, 2023
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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