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IRG4BC30FD1PBF
IGBT, 31 A, 1.8 V, 100 W, 600 V, TO-220AB, 3 Pins
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single IGBTs
- DC Collector Current:31A; Collector Emitter Saturation Voltage Vce(on):1.8V; Power Dissipation Pd:100W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-220AB; No. of Pins:3Pins;
- No. of Pins: 3Pins
- Product Range: -
- Power Dissipation: 100W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-220AB
- Operating Temperature Max: 150°C
- Continuous Collector Current: 31A
- Collector Emitter Voltage Max: 600V
- Collector Emitter Saturation Voltage: 1.8V
| Delivery and price | |
|---|---|
| Units per pack | 2500 |
| Price | 1.21 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## meee IRG4BC30FD1PbF Fast CoPack IGBT
INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE
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C<br>Vces =<br>=<br>G VcE(on) t<br>YP.<br>E @Vce = 15V,<br>n-channel<br>**----- End of picture text -----**<br>
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TO-220AB<br>**----- End of picture text -----**<br>
## **Absolute Maximum Ratings**
||**Parameter**|**Max.**|**Units**|
|---|---|---|---|
|VCES|Collector-to-Emitter Voltage|600|V|
|IC@ TC =25°C|ContinuousCollectorCurrent|31|A|
|IC@ TC =100°C|Continuous Collector Current|17||
|ICM|Pulse Collector Current(Ref.Fig.C.T.5)|124||
|ILM|Clamped Inductive Load current|124||
|IF@ TC =100°C|Diode Continuous Forward Current|8||
|IFM|Diode Maximum ForwardCurrent|16||
|VGE|Gate-to-Emitter Voltage|±20|V|
|PD@ TC =25°C|Maximum Power Dissipation|100|W|
|PD@ TC =100°C|Maximum Power Dissipation|42||
|TJ<br>TSTG|Operating Junction and<br>Storage Temperature Range|-55 to +150|°C|
||Storage Temperature Range,for 10sec.|300 (0.063in.(1.6mm)from case)||
||MountingTorque, 6-32 or M3 Screw|10lbf·in(1.1 N·m)||
## **Thermal / Mechanical Characteristics**
||**Parameter**|**Min.**|**Typ.**|**Max.**|**Units**|
|---|---|---|---|---|---|
|RθJC|Junction-to-Case- IGBT|–––|–––|1.2|°C/W|
|RθJC|Junction-to-Case- Diode|–––|–––|2.0||
|RθCS|Case-to-Sink,flat, greased surface|–––|0.50|–––||
|RθJA|Junction-to-Ambient,typical socket mount|–––|–––|80||
|Wt|Weight|–––|2.0 (0.07)|–––|g (oz.)|
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## IRG4BC30FD1PbF
## **Electrical Characteristics @ TJ = 25°C (unless otherwise specified)**
|~~a~~|**Parameter**<br>~~a~~|**Min.**<br>|**Typ.**<br>|**Max. **<br>|**Units**|**Conditions**|**Conditions**|
|---|---|---|---|---|---|---|---|
|Qg<br>~~a~~|Total Gate Charge(turn-on)<br>~~a~~|—<br>|57<br>|62<br>|nC|IC= 17A<br>VCC= 400V<br>See Fig. 8<br>VGE= 15V||
|Qge<br>~~a~~|Gate-to-Emitter Charge(turn-on)<br>~~aes~~|—<br>~~es~~|10<br>~~es~~|12<br>~~es~~||||
|Qgc<br>~~a~~|Gate-to-Collector Charge(turn-on)<br>~~es~~<br>~~a~~|—<br>~~es~~<br>~~es~~<br>|21<br>~~es~~<br>|24<br>~~es~~<br>||||
|td(on)<br>~~a~~|Turn-On delaytime<br>~~es~~<br>~~es~~<br>~~a~~|—<br>~~es~~<br>~~es~~<br>~~es~~<br>|22<br>~~es~~<br>~~es~~<br>|—<br>~~es~~<br>~~es~~<br>|T<br>ns|TJ= 25°C<br>IC= 17A, VCC= 480V<br>VGE= 15V, RG= 23Ω<br>Energy losses inlcude "tail" and<br>diode reverse recovery.<br>See Fig. 9, 10, 11, 18||
|tr<br>~~a~~|Rise time<br>~~a~~|—<br>~~es~~<br>|24<br>|—<br>||||
|td(off)<br>~~a~~<br>~~a~~|Turn-Off delaytime<br>~~aes~~<br>~~a~~|—<br>~~es~~<br>~~es~~<br>|250<br>~~es~~<br>|320<br>~~es~~<br>||||
|tf<br>~~a~~|Fall time<br>~~a~~|—<br>|160<br>|210<br>||||
|Eon<br>~~a~~<br>~~a~~|Turn-On SwitchingLoss<br>~~aes~~<br>~~a~~|—<br>~~es~~<br>|370<br>~~es~~<br>|—<br>~~es~~<br>|diode reverse recovery.<br>µJ|||
|Eoff<br>~~a~~|Turn-Off SwitchingLoss<br>~~a~~|—<br>|1420<br>|—<br>||||
|Ets<br>~~a~~<br>~~a~~|Total SwitchingLoss<br>~~aes~~<br>~~a~~|—<br>~~es~~<br>|1800<br>~~es~~<br>|2290<br>~~es~~<br>||||
|td(on)<br>~~a~~|Turn-On delaytime<br>~~a~~|—<br>|21<br>|—<br>|T<br>ns|TJ= 150°C See Fig. 9,10,11,18<br>IC= 17A, VCC= 480V<br>VGE= 15V, RG= 23Ω<br>Energy losses inlcude "tail" and<br>diode reverse recovery.||
|tr<br>~~a~~<br>~~a~~|Rise time<br>~~aes~~<br>~~a~~|—<br>~~es~~<br>|25<br>~~es~~<br>|—<br>~~es~~<br>||||
|td(off)<br>~~a~~|Turn-Off delaytime<br>~~a~~|—<br>|400<br>|—<br>||||
|tf<br>~~a~~|Fall time<br>~~aes~~|—<br>~~es~~|340<br>~~es~~|—<br>~~es~~||||
|Ets|Total SwitchingLoss<br>~~es~~|—<br>~~es~~|3280<br>~~es~~|—<br>~~es~~|µJ<br>~~es~~|||
|LE<br>~~a~~|Internal Emitter Inductance<br>~~es~~<br>~~a~~|—<br>~~es ~~<br>|7.5<br> <br>|—<br> ~~GQ~~<br>|nH<br>~~GQ~~|Measured 5mm frompackage<br>~~GQ~~||
|Cies<br>~~a~~|Input Capacitance<br>~~a~~|—<br>|1170<br>|—<br>|pF<br>~~eee~~|VGE= 0V<br>VCC= 30V<br>See Fig. 7<br>f = 1.0MHz||
|Coes<br>~~a~~|Output Capacitance<br>~~aes~~|—<br>~~es~~|100<br>~~es~~|—<br>~~es~~||||
|Cres|Reverse Transfer Capacitance<br>~~es~~|—<br>~~es~~<br>~~ee eee~~|11<br>~~es~~<br>~~eee~~|—<br>~~es~~<br>~~eee~~||||
|trr|Diode Reverse Recovery Time<br>~~es~~<br>~~ee~~|—<br>~~es~~<br>~~ee~~<br>~~ee eee~~|46<br>~~es~~<br>~~ee~~<br>~~eee~~|61<br>~~es~~<br>~~ee~~<br>~~eee~~|ns<br>~~ee~~<br>~~eee~~<br>~~LE~~|TJ= 25°C See Fig.<br>TJ= 125°C<br>14<br>~~LE~~|VR= 200V<br>di/dt 200A/µs<br>IF= 12A|
|||—<br>~~ee~~<br>~~ee eee~~|85<br>~~ee~~<br>~~eee~~<br>~~Ft~~|93<br>~~ee~~<br>~~eee~~<br>~~Ft~~<br>~~LE~~||||
|Irr|Diode Peak Reverse Recovery Current<br>~~Pe~~|—<br>~~ee eee~~<br>~~Pe~~|4.8<br>~~eee~~<br>~~Pe~~|6.5<br>~~eee~~<br>~~Pe~~<br>~~LE~~|A<br>~~eee~~<br>~~Pe~~<br>~~LE~~<br>~~LE~~|TJ= 25°C See Fig.<br>TJ= 125°C<br>15<br>~~Pe~~<br>~~LE~~<br>~~LE~~||
|||—<br>~~Pe~~|8.5<br>~~Pe~~<br>~~Ft~~|10<br>~~Pe~~<br>~~LE~~<br>~~Ft~~<br>~~LE~~||||
|Qrr|Diode Reverse Recovery Charge<br>~~Pe~~|—<br>~~Pe~~|110<br>~~Pe~~|190<br>~~LE~~<br>~~Pe~~<br>~~LE~~|nC<br>~~LE~~<br>~~Pe~~<br>~~LE~~<br>~~LE~~|TJ= 25°C See Fig.<br>TJ= 125°C<br>16<br>~~LE~~<br>~~Pe~~<br>~~LE~~<br>~~LE~~||
|||~~Pe~~<br>~~|~~|410<br>~~Pe~~<br>~~Ft~~<br>~~|~~|550<br>~~Pe~~<br>~~LE~~<br>~~Ft~~<br>||||
|di(rec)M/dt|Diode Peak Rate of Fall of Recovery<br>Duringtb<br>~~EE~~|—<br>~~EE~~<br>~~|~~|260<br>~~EE~~<br>~~|~~|—<br>~~LE~~<br>~~EE~~<br>|A/µs <br>~~LE~~<br>~~EE~~<br>~~LE~~|TJ= 25°C See Fig.<br>TJ= 125°C<br>17<br>~~LE~~<br>~~EE~~<br>~~LE~~||
|||—<br>~~EE~~<br>~~|~~|270<br>~~EE~~<br>~~||~~|—<br>~~EE~~<br>~~|~~||||
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## IRG4BC30FD1PbF
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1000 ——<—_—_—<——_aa OO a<br>aee eeeeeeeee<br>T = 25°CJ<br>100<br>pee o e<br>ee ee a ee_ee ee eee eee<br>a oa T = 150°CJ | | | ty<br>a e<br>10 | Al | iii<br>ee a<br>a a<br>CA] re ee ee ee ee ee<br>V = 15VGE<br>1 aeJn 20uscouse PULSE WIDTHI mone<br>1 10<br>V , Collector-to-Emitter Voltage (V)CE<br>I , Collector-to-Emitter Current (A)C<br>**----- End of picture text -----**<br>
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1000 ==eea S555 5=5=5====—ee eee<br>EEPitt ttee tteeett tT TTeeeyt<br>100<br>pttSeleee Gn Gn | ne| 0,| cae e eeeeeee<br>|| T = 150°CJ Ls A_| | ft | tT tt<br>Pitti PA<br>T = 25°CJ<br>10 Gn/Geneneeeeee<br>ae as a a<br>ey 2 ee A ee<br>BA) Eee eee eee<br>1 VfTVET{itisess V = 50VCC s PULSEouise WIDTHI wore<br>5 6 7 8 9 10 11 12 13<br>V , Gate-to-Emitter Voltage (V)GE<br>I , Collector-to-Emitter Current (A)C<br>**----- End of picture text -----**<br>
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## IRG4BC30FD1PbF
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40 TOO T) 2.5 &eoaa F I = 34ACC<br>30 S P |<br>Sopp) 2.0 pec an<br>20 PN Lee<br>~e TEEPEPE<br>I = 17ACC<br>ff |<br>1.5<br>10 | RE Uae a nni<br>| | | Nn SA A<br>I = 8.5ACC<br>ace TAT TEEe<br>0 PN 1.0 PEPERPEPE EET<br>25 50 75 100 125 150 -60 -40 -20 0 20 40 60 80 100 120 140<br>T , Case Temperature (°C)C T , Junction Temperature (°C)JJ<br>Fig. 4 - Maximum Collector Current vs. Case Fig. 5 - Typical Collector-to-Emitter Voltage<br>Temperature vs. Junction Temperature<br>10<br>a<br>a<br>1<br>eee e<br>D = 0.50<br>0.20<br>= S 0.10 es eo_OCC | PDM<br>0.1<br>at 0.05 i oe | t<br>1<br>0.020.01 SINGLE PULSE t2<br>e (THERMAL RESPONSE) p es<br>e e Pe 1. Duty factor D = t / t Notes 1 2 |<br>a a ee<br>0.01<br>0.00001 0.0001 0.001 0.01 0.1 1 10<br>t , Rectangular Pulse Duration (sec)1<br>Maximum DC Collector Current (A)<br>CE<br>V , Collector-to-Emitter Voltage (V)<br>thJC<br>Thermal Response (Z )<br>**----- End of picture text -----**<br>
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2.5 &eoaa F I = 34ACC<br>|<br>2.0 pec an<br>Lee<br>TEEPEPE<br>I = 17ACC<br>|<br>1.5<br>Uae a nni<br>SA A<br>I = 8.5ACC<br>TAT TEEe<br>1.0 PEPERPEPE EET<br>-60 -40 -20 0 20 40 60 80 100 120 140 160<br>T , Junction Temperature (°C)JJ<br>CE<br>V , Collector-to-Emitter Voltage (V)<br>**----- End of picture text -----**<br>
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## IRG4BC30FD1PbF
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2000<br>VGS = 0V, f = 1 MHZ<br>1800 m l Cies = C ge + Cgd, C ce SHORTED<br>C = C<br>1600 res gc<br>N e Coes = Cce + Cgc<br>1400<br>Cies<br>1200 a e<br>1000<br>N UH<br>800 P ANTIE aims<br>600 PS Coes PE TE E ETT<br>400<br>NC O<br>Cres<br>200<br>a e)<br>L IKE<br>0 LLL TT]<br>1 10 100 1000<br>VCE, Collector-toEmitter-Voltage(V)<br>Capacitance (pF)<br>**----- End of picture text -----**<br>
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14<br>VCC = 400V<br>“TIL,<br>12 IC = 17A are<br>10<br>86 | |pe<br>r et TT<br>4<br>P A Td<br>2<br>/ | | | | ft<br>0 An<br>0 10 20 30 40 50 60<br>Q G, Total Gate Charge (nC)<br>VGE, Gate-to-Emitter Voltage (V)<br>**----- End of picture text -----**<br>
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2000 9000<br>VCE = 480V RG = 22<br>8000 Pt ttt tt<br>VGE = 15V VGE = 15V<br>1900 TJ = 25°C 7000 V CC = 480V tt IC = 34A<br>IC = 17A<br>6000 _<br>wa tt |<br>5000<br>Oo) EET<br>1800 —- | G eeepeerere<br>4000<br>3000 IC = 17A<br>C CCEE) P Et tT ET TTT yy<br>1700 R A H A<br>2000<br>p T tT PE e t|<br>IC = 8.5A<br>1000<br>r r<br>1600 0 tt<br>0 10 20 30 40 50 -60 -40 -20 0 20 40 60 80 100 120 140 160<br>RG, Gate Resistance (Ω) TJ, Juntion Temperature (°C)<br>Total Swiching Losses (mJ) Total Swiching Losses (mJ)<br>**----- End of picture text -----**<br>
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IRG4BC30FD1PbF<br>**----- End of picture text -----**<br>
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8000 1000<br>RG = 22Ω<br>7000 T J = 150°C tit rm1 ewe20V |lilep]<br>VCE= 480V<br>| ee eeeel<br>6000 V GE = 15V<br>100<br>5000 | ye| Yl | | ee<br>4000 / | ER es ee ee<br>3000 T ivAg de) 10 PA eyA |<br>20001000 P| 4A] ft df A | |<br>ail<br>1<br>0 10 20 30 40<br>1 10 100 1000<br>IC, Collecto-to-Emitter (A) V , Collector-to-Emitter Voltage (V)CE<br>C<br>I , Collector-to-Emitter Current (A)<br>Total Swiching Losses (mJ)<br>**----- End of picture text -----**<br>
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100<br>—OS<br>ff<br>ze ff<br>Le<br>10<br>ff<br>o | A | |<br>T = 175˚C<br>J<br>9° a T = 150˚CJ<br>T = 25˚C<br>2 ff J<br>wn<br>Poff 1<br>8 FF<br>S$ —-f-f<br>B fp<br>0.1<br>0 1 2 3 4<br>**----- End of picture text -----**<br>
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TER Rectifier<br>IRG4BC30FD1PbF<br>200 20<br>VR = 390V VR = 390V<br>TJ = 25°C _____ TJ = 25°C _____<br>175<br>TJ = 125°C ---------- TJ = 125°C ----------<br>150 a Ganaa 15 g wtH<br>IF = 16A<br>125 IF = 8A<br>H O de<br>100 B CC 10 E e<br>S we NT L L<br>75<br>E LANT c e eeaenuve<br>i. AV r v N\<br>50 5 IF = 16A<br>IF = 8A<br>25 ee y O<br>0 CHEER] 0 G EE<br>100 200 300 400 500 600 700 800 900 1000 100 200 300 400 500 600 700 800 900 1000<br>diF/dt (A/µs) diF/dt (A/µs)<br>IRRM (A)<br>trr (ns)<br>**----- End of picture text -----**<br>
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1000 1400<br>VR = 390V IF = 16A VR = 390V<br>900 T J = 25°C _____ TT TJ = 25°C _____ Too<br>TJ = 125°C ---------- IF = 8A 1200 TJ = 125°C ----------<br>800<br>700 E EE AA caaeA 1000 a SCfey<br>IF = 8A<br>c e e}, SEE<br>600<br>ety 800 er an ea<br>500 Paice TT<br>600<br>400 P e ET EL S ea n oe<br>300<br>400<br>200 P PCCCHee = Eee IF = 16A<br>| ee Le py Aaa<br>200<br>100<br>a<br>> aanenee ee e [2] [eeee]<br>4 0000000 AP EPEGE<br>0 0<br>100 200 300 400 500 600 700 800 900 1000 100 200 300 400 500 600 700 800<br>diF/dt (A/µs) diF/dt (A/µs)<br>di(rec)M / dt (A/µs)<br>Qrr (nC)<br>**----- End of picture text -----**<br>
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100 200 300 400 500 600 700 800 900 1000<br>diF/dt (A/µs)<br>**----- End of picture text -----**<br>
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## IRG4BC30FD1PbF
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Same type<br>device as<br>D.U.T.<br>80% 430µF<br>of Vce D.U.T.<br>**----- End of picture text -----**<br>
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GATE VOLTAGE D.U.T.<br>10% +Vg<br>+Vg<br>DUT VOLTAGE<br>Vce<br>AND CURRENT<br>Vcc [10% Ic] 90% Ic Ipk<br>Ic<br>5% Vce<br>td(on) tr<br>t2<br>Eon =<br>t1<br>t1 t2<br>**----- End of picture text -----**<br>
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90% Vge<br>+Vge<br>Vce<br>90% Ic<br>10% Vce<br>Ic<br>Ic<br>5% Ic<br>td(off) tf<br>t1+5µS<br>Eoff =<br>t1<br>t1 t2<br>**----- End of picture text -----**<br>
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trr<br>trr<br>Ic — — Qrr = t<br>tx<br>tx<br>10% Irr<br>10% Vcc<br>Vcc<br>Vpk<br>Irr<br>DIODE RECOVERY<br>WAVEFORMS<br>t4<br>Erec =<br>t3<br>DIODE REVERSE<br>RECOVERY ENERGY<br>t3 t4<br>**----- End of picture text -----**<br>
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## IRG4BC30FD1PbF
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Vg GATE SIGNAL<br>DEVICE UNDER TEST<br>CURRENT D.U.T.<br>VOLTAGE IN D.U.T.<br>CURRENT IN D1<br>t0 t1 t2<br>**----- End of picture text -----**<br>
**Fig.18e** - Macro Waveforms for Figure 18a's Test Circuit
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L D.U.T.<br>1000V V *c<br>50V<br>6000µF<br> 100V<br>**----- End of picture text -----**<br>
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RL = VCCICM<br>480µF<br>0 - VCC<br>Pulsed Collector Current<br>Test Circuit<br>**----- End of picture text -----**<br>
**Fig. 19** - Clamped Inductive Load Test Circuit
**Fig. 20** - Pulsed Collector Current Test Circuit
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## IRG4BC30FD1PbF
## **Notes:**
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Note: "P" in assembly line<br>position indicates "Lead-Free"<br>the most current drawing please refer to<br>rating: Vge=20V; pulse width limited<br>%( Vces), Vee=20V, L=10UH, Rg = 23 Ω<br>≤ ≤ .<br>**----- End of picture text -----**<br>
Energy losses include "tail" and diode reverse recovery, using Diode FD100H06A5.
Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site.
**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 01/2010
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Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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