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IRG4BC30FD-SPBF
IGBT, 31 A, 1.8 V, 100 W, 600 V, TO-263 (D2PAK), 3 Pins
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single IGBTs
- No. of Pins: 3Pins
- Power Dissipation: 100W
- Transistor Mounting: Surface Mount
- Transistor Case Style: TO-263 (D2PAK)
- Operating Temperature Max: 150°C
- Continuous Collector Current: 31A
- Collector Emitter Voltage Max: 600V
- Collector Emitter Saturation Voltage: 1.8V
| Delivery and price | |
|---|---|
| Units per pack | 1 |
| Price | 1.1 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## moe IRG4BC30FD-SPbF Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE **==> picture [160 x 96] intentionally omitted <==** **----- Start of picture text -----**<br> C<br>VcEs<br>=<br>G VcE(on) typ.<br>E @Vce = 15V,<br>n-channel<br>**----- End of picture text -----**<br> **==> picture [28 x 9] intentionally omitted <==** **----- Start of picture text -----**<br> D [2] Pak<br>**----- End of picture text -----**<br> ## **Absolute Maximum Ratings** ||**Parameter**|**Max.**|**Units**| |---|---|---|---| |VCES|Collector-to-Emitter Voltage|600|V| |IC@ TC =25°C|ContinuousCollectorCurrent|31|A| |IC@ TC =100°C|Continuous Collector Current|17|| |ICM|Pulse Collector Current(Ref.Fig.C.T.5)|124|| |ILM|Clamped Inductive Load current|124|| |IF@ TC =100°C|DiodeContinuous ForwardCurrent|12|| |IFM|Diode Maximum Forward Current|120|| |VGE|Gate-to-Emitter Voltage|±20|V| |PD@ TC =25°C|Maximum Power Dissipation|100|W| |PD@ TC =100°C|Maximum Power Dissipation|42|| |TJ<br>TSTG|Operating Junction and<br>Storage Temperature Range|-55 to +150|°C| www.irf.com 1 ## IRG4BC30FD-SPbF ## **Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** ||**Parameter**|**Min.**|**Typ.**|**Max. **|**Units**|**Conditions**|**Conditions**| |---|---|---|---|---|---|---|---| |Qg|Total Gate Charge(turn-on)<br>~~es~~|—<br>~~es~~|51<br>~~es~~|77<br>~~es~~|nC|IC= 17A<br>VCC= 400V<br>See Fig. 8<br>VGE= 15V|| |Qge|Gate-to-Emitter Charge(turn-on)<br>~~es~~|—<br>~~es~~|7.9<br>~~es~~|12<br>~~es~~|||| |Qgc|Gate-to-Collector Charge(turn-on)<br>~~es~~|—<br>~~es~~|19<br>~~es~~|28<br>~~es~~|||| |td(on)|Turn-On delaytime<br>~~es~~|—<br>~~es~~|42<br>~~es~~|—<br>~~es~~|T<br>ns|TJ= 25°C<br>IC= 17A, VCC= 480V<br>VGE= 15V, RG= 23Ω<br>Energy losses inlcude "tail" and<br>diode reverse recovery.<br>mJ See Fig. 9, 10, 11, 18|| |tr|Rise time<br>~~es~~|—<br>~~es~~|26<br>~~es~~|—<br>~~es~~|||| |td(off)|Turn-Off delaytime<br>~~es~~|—<br>~~es~~|230<br>~~es~~|350<br>~~es~~|||| |tf|Fall time<br>~~es~~|—<br>~~es~~|160<br>~~es~~|230<br>~~es~~|||| |Eon|Turn-On SwitchingLoss<br>~~es~~|—<br>~~es~~|0.63<br>~~es~~|—<br>~~es~~|diode reverse recovery.<br>mJ See Fig. 9, 10, 11, 18||| |Eoff|Turn-Off SwitchingLoss<br>~~es~~|—<br>~~es~~<br>~~es~~|1.39<br>~~es~~|—<br>~~es~~|||| |Ets|Total SwitchingLoss<br>~~es~~|—<br>~~es~~<br>~~es~~|2.02<br>~~es~~|3.9<br>~~es~~|||| |td(on)|Turn-On delaytime<br>~~es~~<br>~~Re~~|—<br>~~es~~<br>~~es~~<br>~~Re~~|42<br>~~es~~<br>~~Re~~|—<br>~~es~~<br>~~Re~~|T<br>ns<br>|TJ= 150°C See Fig. 9,10,11,18<br>IC= 17A, VCC= 480V<br>VGE= 15V, RG= 23Ω<br>Energy losses inlcude "tail" and<br>mJ diode reverse recovery.<br><br>~~GO~~|| |tr|Rise time<br>~~es~~|—<br>~~es~~|27<br>~~es~~|—<br>~~es~~|||| |td(off)<br>~~a~~|Turn-Off delaytime<br>~~es~~<br>~~a~~|—<br>~~es~~<br>~~ee~~<br>|310<br>~~es~~<br>|—<br>~~es~~<br>|||| |tf<br>~~a~~|Fall time<br>~~es~~<br>~~a~~|—<br>~~es~~<br>~~ee~~<br>|310<br>~~es~~<br>|—<br>~~es~~<br>|||| |Ets<br>~~a~~|Total SwitchingLoss<br>~~a~~|—<br>~~ee~~<br><br>~~Ss~~|3.2<br><br>~~DD~~|—<br><br>~~DD~~|mJ diode reverse recover<br><br>~~GO GO~~||| |LE<br>~~a~~|Internal Emitter Inductance<br>~~aes~~|—<br>~~ee~~<br>~~es~~<br>~~Ss~~|7.5<br>~~es~~<br>~~DD~~|—<br>~~es~~<br>~~DD~~|nH<br>~~es~~<br>~~GO GO~~|Measured 5mm frompackage<br>~~es~~<br>~~GO~~|| |Cies<br>|Input Capacitance<br>~~es~~<br>~~Re~~|—<br>~~es~~<br>~~Ss ~~<br>~~Re~~|1100<br>~~es~~<br> ~~DD~~<br>~~Re~~|—<br>~~es~~<br>~~DD ~~<br>~~Re~~|pF<br>~~es~~<br> ~~GO GO~~<br>~~ee~~|VGE= 0V<br>VCC= 30V<br>See Fig. 7<br>f = 1.0MHz<br>~~es~~<br>~~GO~~|| |Coes|Output Capacitance<br>~~es~~|—<br>~~es~~<br>~~es~~|74<br>~~es~~|—<br>~~es~~|||| |Cres|Reverse Transfer Capacitance<br>~~es~~|—<br>~~es~~<br>~~es~~<br>~~ee ee~~|14<br>~~es~~<br>~~ee~~|—<br>~~es~~<br>~~ee~~|||| |trr|Diode Reverse Recovery Time<br>~~es~~<br>~~ee~~|—<br>~~es~~<br>~~es~~<br>~~ee~~<br>~~ee ee~~|42<br>~~es~~<br>~~ee~~<br>~~ee~~|60<br>~~es~~<br>~~ee~~<br>~~ee~~|ns<br>~~ee~~<br>~~ee~~|TJ= 25°C See Fig.<br>TJ= 125°C<br>14|VR= 200V<br>di/dt 200A/µs<br>IF= 12A<br>~~ee~~| |||—<br>~~ee~~<br>~~ee ee~~|80<br>~~ee~~<br>~~ee~~<br>~~Ft~~|120<br>~~ee~~<br>~~ee~~<br>~~Ft~~|||| |Irr|Diode Peak Reverse Recovery Current<br>~~FE~~|—<br>~~ee ee~~<br>~~FE~~|3.5<br>~~ee~~<br>~~FE~~|6.0<br>~~ee~~<br>~~FE~~|A<br>~~ee~~<br>~~FE~~|TJ= 25°C See Fig.<br>TJ= 125°C<br>15<br>~~FE~~|| |||—<br>~~FE~~|5.6<br>~~FE~~<br>~~Ft~~|10<br>~~FE~~<br>~~Ft~~|||| |Qrr|Diode Reverse Recovery Charge<br>~~Pe~~|—<br>~~Pe~~|80|180<br>~~LE~~|nC<br>~~LE~~<br>~~eee~~|TJ= 25°C See Fig.<br>TJ= 125°C<br>16<br>~~LE~~<br>~~ee~~|| |||~~Pe~~<br>~~ee~~|220<br>~~Ft~~<br>~~eee~~|600<br>~~LE~~<br>~~Ft~~<br>~~eee~~|||| |di(rec)M/dt|Diode Peak Rate of Fall of Recovery<br>Duringtb<br>~~ee~~|—<br>~~ee~~<br>~~ee~~|180<br>~~ee~~<br>~~eee~~|—<br>~~ee~~<br>~~eee~~|A/µs <br>~~ee~~<br>~~eee~~|TJ= 25°C See Fig.<br>TJ= 125°C<br>17<br>~~ee~~<br>~~ee~~|| |||—<br>~~ee~~<br>~~ee~~|120<br>~~ee~~<br>~~eee~~<br>~~Ft~~|—<br>~~ee~~<br>~~eee~~<br>~~Ft~~|||| www.irf.com 2 ## IRG4BC30FD-SPbF www.irf.com 3 ## IRG4BC30FD-SPbF www.irf.com 4 ## IRG4BC30FD-SPbF www.irf.com 5 ## IRG4BC30FD-SPbF www.irf.com 6 ## IRG4BC30FD-SPbF www.irf.com 7 ## IRG4BC30FD-SPbF **==> picture [146 x 70] intentionally omitted <==** **----- Start of picture text -----**<br> Same type<br>device as<br>D.U.T.<br>80% 430µF<br>of Vce D.U.T.<br>**----- End of picture text -----**<br> **==> picture [185 x 163] intentionally omitted <==** **----- Start of picture text -----**<br> GATE VOLTAGE D.U.T.<br>10% +Vg<br>+Vg<br>DUT VOLTAGE<br>Vce<br>AND CURRENT<br>Vcc [10% Ic] 90% Ic Ipk<br>Ic<br>5% Vce<br>td(on) tr<br>t2<br>Eon =<br>t1<br>t1 t2<br>**----- End of picture text -----**<br> **==> picture [186 x 195] intentionally omitted <==** **----- Start of picture text -----**<br> 90% Vge<br>+Vge<br>Vce<br>90% Ic<br>10% Vce<br>Ic<br>Ic<br>5% Ic<br>td(off) tf<br>t1+5µS<br>Eoff =<br>t1<br>t1 t2<br>**----- End of picture text -----**<br> **==> picture [178 x 193] intentionally omitted <==** **----- Start of picture text -----**<br> trr<br>trr<br>Ic — — Qrr = t<br>tx<br>tx<br>10% Irr<br>10% Vcc<br>Vcc<br>Vpk<br>Irr<br>DIODE RECOVERY<br>WAVEFORMS<br>t4<br>Erec =<br>t3<br>DIODE REVERSE<br>RECOVERY ENERGY<br>t3 t4<br>**----- End of picture text -----**<br> www.irf.com 8 ## IRG4BC30FD-SPbF **==> picture [190 x 176] intentionally omitted <==** **----- Start of picture text -----**<br> Vg GATE SIGNAL<br>DEVICE UNDER TEST<br>CURRENT D.U.T.<br>VOLTAGE IN D.U.T.<br>CURRENT IN D1<br>t0 t1 t2<br>**----- End of picture text -----**<br> **Fig.18e** - Macro Waveforms for Figure 18a's Test Circuit **==> picture [204 x 50] intentionally omitted <==** **----- Start of picture text -----**<br> L D.U.T.<br>1000V V *c<br>50V<br>6000µF<br> 100V<br>**----- End of picture text -----**<br> **Fig. 19** - Clamped Inductive Load Test Circuit **==> picture [133 x 135] intentionally omitted <==** **----- Start of picture text -----**<br> RL = VCCICM<br>480µF<br>0 - VCC<br>Pulsed Collector Current<br>Test Circuit<br>**----- End of picture text -----**<br> **Fig. 20** - Pulsed Collector Current Test Circuit www.irf.com 9 ## IRG4BC30FD-SPbF **==> picture [55 x 8] intentionally omitted <==** **----- Start of picture text -----**<br> www.irf.com<br>**----- End of picture text -----**<br> 10 ## IRG4BC30FD-SPbF **==> picture [337 x 377] intentionally omitted <==** **----- Start of picture text -----**<br> Dimensions are shown in millimeters (inches)<br>TRR<br>o0°0<br>1.60 (.063)<br>1.50 (.059)<br>4.10 (.161)3.90 (.153) 1.60 (.063)1.50 (.059) 0.368 (.0145)<br>0.342 (.0135)<br>tL LZ 4 Te<br>FEED DIRECTION Ira 1.85 (.073) ] 11.60 (.457) |<br>1.65 (.065) OFS OS =| 11.40 (.449) 15.42 (.609)15.22 (.601) | 24.30 (.957)23.90 (.941)<br>A TRL<br>1.75 (.069)<br>10.90 (.429) 1.25 (.049)<br>10.70 (.421) 4.72 (.136)<br>ein 16.10 (.634) 4.52 (.178)<br>15.90 (.626)<br>FEED DIRECTION<br>13.50 (.532) 27.40 (1.079)<br>é 12.80 (.504) 23.90 (.941) T<br>4<br>330.00 60.00 (2.362)<br>(14.173) MIN.<br> MAX.<br>| OO |<br>30.40 (1.197)<br>NOTES : TT | \L MAX.<br>G 1. COMFORMS TO EIA-418.2. CONTROLLING DIMENSION: MILLIMETER.3. DIMENSION MEASURED @ HUB.4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 26.40 (1.039)24.40 (.961)3 It 4<br>Notes:<br>@ Repetitive rating: Vge=20V; pulse width limited by maximum junction temperature<br>@Vcec=80 %( Vces), Vee=20V, L=10UH, Rg = 23 Ω (figure 19).<br>≤ ≤ .<br>**----- End of picture text -----**<br> ## **Notes:** When mounted on 1" square PCB (FR-4 or G-10 Material). Data and specifications subject to change without notice. **IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 01/2010 www.irf.com 11
Updated at February 9, 2023
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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