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IRG4BC20KDPBF
IGBT, 16 A, 2.27 V, 60 W, 600 V, TO-220AB, 3 Pins
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single IGBTs
- No. of Pins: 3Pins
- Product Range: IRG4
- Power Dissipation: 60W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-220AB
- Operating Temperature Max: 150°C
- Continuous Collector Current: 16A
- Collector Emitter Voltage Max: 600V
- Collector Emitter Saturation Voltage: 2.27V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 0.922 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## **Features** **==> picture [158 x 96] intentionally omitted <==** **----- Start of picture text -----**<br> C<br>Voces =<br>=<br>G VcE(on) typ.<br>E @VceE = 15V,<br>n-channel<br>**----- End of picture text -----**<br> **==> picture [39 x 8] intentionally omitted <==** **----- Start of picture text -----**<br> TO-220AB<br>**----- End of picture text -----**<br> **==> picture [26 x 51] intentionally omitted <==** **----- Start of picture text -----**<br> θ<br>[Ric<br>θ<br>[Ric<br>θ<br>[Ros<br>θ<br>FRx<br>**----- End of picture text -----**<br> **==> picture [61 x 9] intentionally omitted <==** **----- Start of picture text -----**<br> www.irf.com<br>**----- End of picture text -----**<br> 1 **==> picture [432 x 360] intentionally omitted <==** **----- Start of picture text -----**<br> [Visaces | Colestorto-Emiter Breakdown Vottage® | 600| — | — | V | Voe=OV,lo=250uA<br>∆ ∆<br>F Viserces Ty | Temperature Coeff. of Breakdown Votage | — [0.40| — | VC | Voe=OV,Io=1.0mA<br>imVce(on) Collector-to-Emitter Saturation Voltage | — [2.27]2.8 | s Ic = 9.0A Vee = 15V<br>|Vcen | — [243]S— | 06 Ic = 9.0A, Ty = 150°C<br>∆ ∆<br>[Veen __|Gate Threshold Voltage | 3.0 | — | 6.0 |<br>Fie Tu | Temperature Coeff of Threshold Votage | — | 10 | — |mVPO[ Voe=Voe,lo= 250A<br>feVemIces [ForwardBeeZero GateTransconductance@VoltageSessa"Collector Current|| 287— | 43[— from]|250]— | SpA |We Vce=100V,lo=90Aeov.vee toasts<br>Se PatinaDiode Forward Voltage Drop |}Site]— [14] 14.7] V |beeen Ic=8.0A neme See Fig."| 13<br>Switching Characteristics @ Ty = 25°C (unless otherwise specified)<br>|| Parameter | Min. | Typ. Max. | units| Conditions<br>[Q, | Total Gate Charge (turn-on) | — | 34 | 51 | Ic = 9.0A<br>Qj | Gate= Coltector Charge turn-on) | — [14] 21 | | Voe=18V<br>fran<br>—S«*dRiseTime—SS~—SsSS<br>fh Boag Tne<br>[taom MT |] | Ty DBC<br>Ω<br>ft | Turn-Off DelayTime | — ‘| 180 | 270 | lc = 9.0A, Veo = 480V<br>[Eon | FalTime | = | 72 | 110 Vor = 15V, Re = 50<br>Loss|<br>[Eo | Turn-O ffn SwitchSwitch ing Loss| — [0.3 40 ] —— || ma J Ea n ergyd diode lossr e verses includerecovery "tail"<br>tsc Short Circuit Withstand Time 10 Us | Voc = 360V, Ty = 125°C<br>Ω<br>aon | Turm-On DelayTime —=S—~idC 1 | — || T= 180"C, See Fig. 11,14<br>ft [RiseTime | SH | 87 | Ic = 9.0, Voc = 480V<br>Ω<br>**----- End of picture text -----**<br> **==> picture [7 x 9] intentionally omitted <==** **----- Start of picture text -----**<br> 2<br>**----- End of picture text -----**<br> **==> picture [62 x 9] intentionally omitted <==** **----- Start of picture text -----**<br> www.irf.com<br>**----- End of picture text -----**<br> **==> picture [439 x 492] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>For both:<br>A |nie Duty cycle: 50%<br>8 | ee | T = 125°CJ |<br>T = 90°Csink<br>Gate drive as specified<br>Power Dissipation = W<br>LE LP ET<br>6<br>Square wave:<br>60% of rated<br> voltage<br>4<br>ray | | ™ ee<br>I<br>e m ULMULTETI SKIL<br>2<br>) Ideal diodes FE ANNU<br><i JUL ~ SU<br>C e a hi<br>0<br>0.1 1 10 100<br>f, Frequency (KHz)<br>Fig. 1 - Typical Load Current vs. Frequency<br>(Load Current = Ipms of fundamental)<br> 100 ——— 100 a<br>ee ee ee oe ee aeeoeeeoe<br>es a es ee ee ee ee<br>po T = 25 CJ o a ee ee ee ee<br>a nna T = 150 CJ o eeeaea<br> 10 10<br>Aeon e e T = 150 CJJ ee) Ae o Ae<br>a anne ysee, A ee ee eee en ES aey7 2 Aeeeeeeeey7 2 Aeeeeeee7 2 Aeeeeeee 2 Aeeeeeee Aeeeeeeeeeeeeeeeeeeeeee ES eee ===eee ===eeeeee<br>T = 25 CJJ o<br>| / Ae eee ( ann |<br>V = 15VGE V = 50VCCCC<br> 1 fF | | 20µs PULSE WIDTH Tt 1 wil 5µs PULSE WIDTH |<br> 1 10 5 10 15 20<br>V , Collector-to-Emitter Voltage (V)CE V , Gate-to-Emitter Voltage (V)GEGE<br>LOAD CURRENT (A)<br>C C<br>I , Collector-to-Emitter Current (A) I , Collector-to-Emitter Current (A)<br>**----- End of picture text -----**<br> **==> picture [201 x 196] intentionally omitted <==** **----- Start of picture text -----**<br> 100 a<br>aeeoeeeoe<br>a es ee ee ee ee<br>a ee ee ee ee<br>eeeaea<br> 10<br>o<br>T = 150 CJJ ee) Ae<br>ES ES<br>en<br>aey7 2 Aeeeeeeeey7 2 Aeeeeeee7 2 Aeeeeeee 2 Aeeeeeee Aeeeeeeeeeeeeeeeeeeeeee eee ===eee ===eeeeee<br>T = 25 CJJ o<br>( ann |<br>V = 50VCCCC<br> 1 wil 5µs PULSE WIDTH |<br>5 10 15 20<br>V , Gate-to-Emitter Voltage (V)GEGE<br>C<br>I , Collector-to-Emitter Current (A)<br>**----- End of picture text -----**<br> www.irf.com 3 **==> picture [433 x 482] intentionally omitted <==** **----- Start of picture text -----**<br> 20 5.0<br>V = 15VGE<br>80 us PULSE WIDTH<br>THT) «6 [ee] [e]<br>| PETiTTT I = AC 18 Ty<br>15 aaaaaaaaa 4.0 6 ee<br>| |NI | |aa| | et 28 8 P = 2<br>aa|we| NXaaaa Ge08BeOe Oe eeoe= a<br>10 3.0<br>aaaa| |)NoINNaaa BEP=a8Bein BSOn P=Oe ode e I = C<br>5 POPPIN} 2.0 ER R I = AC 4.5<br>N ee Tt ttt 4<br>0 aaaa| | aa| |N \ 1.0 28BEPit BR PtBe ee<br>25 50 75 100 125 150 -60 -40 -20 0 20 40 60 80 100 120 140 160<br>T , Case Temperature ( C)C ° T , Junction Temperature ( C)J °<br>Fig. 4 - Maximum Collector Current vs. Case Fig. 5 - Typical Collector-to-Emitter Voltage<br>Temperature vs. Junction Temperature<br> 10 po a aaeeee eee eee eetee<br>le mnnItl<br>D = 0.50<br> 1 a ease=a ||<br>0.20<br>PO 0.100.05 mn— PDM<br>0.1 e r<br>0.02 t1<br>0.01 SINGLE PULSE<br>Lr| | (THERMAL RESPONSE) ee t2<br>ee<br>|| Notes: ee ee<br>1. Duty factor D = t / t1 2<br>PC P 2. Peak TJ = PDM x Z thJC + TC<br>0.01<br>0.00001 0.0001 Fe 0.001 0.01 0.1 1<br>t , Rectangular Pulse Duration (sec)1<br>Maximum DC Collector Current(A) CE<br>V , Collector-to-Emitter Voltage(V)<br>thJC<br>Thermal Response (Z )<br>**----- End of picture text -----**<br> www.irf.com 4 **==> picture [441 x 470] intentionally omitted <==** **----- Start of picture text -----**<br> 800 VGE = 0V, f = 1MHz 20 VCC = 400V<br>CCiesres == CCgegc + Cgc , C SHORTEDce I C = 9.0A<br>al Coes = Cce + Cgc 16 P TT<br>Ft Cer<br>600<br>PCIE TT p f<br>Cies 12<br>Nit ef ee |a de<br>400<br>eel ee<br>RL ll 8 ee ee<br>EE ll pf f |ttt<br>200<br>Coes 4<br>S NN >s ARR+ +<br>Cres<br>0 PS HieeilllEF 0 Pitty ty<br> 1 10 100 0 10 20 30 40<br>V , Collector-to-Emitter Voltage (V)CE Q , Total Gate Charge (nC)G<br>Fig. 7 - Typical Capacitance vs. Fig. 8 - Typical Gate Charge vs.<br>Collector-to-Emitter Voltage Gate-to-Emitter Voltage<br>0.8 10<br>V = 480VCC R G Ωhm<br>V = 15VT = 25 CI = 9.0AJCGE ° Oe ee V = 15VV = 480VGECC SS Go Soee SSeS eee<br>I = AC 18<br>Ssaaeeee Gn Re Gn Ge OeOn RO G8 Oe<br>0.7<br>TT 1 for I = C<br>0.6 |) |) tTLL teemTT itt Bu eu uu ous OW GT C I = AC EDtT. 4.5<br>aavy |P| |P| |P| | O eG Oea Oe Oe8 0ee eeBe So een<br>PPP) CEE<br>0.5 0.1<br>0 10 20 30 40 50 -60 -40 -20 0 20 40 60 80 100 120 140 160<br>(Ohm)Ω ) T , Junction Temperature ( C )J °<br>C, Capacitance (pF)<br>GE<br>V , Gate-to-Emitter Voltage (V)<br>Total Switching Losses (mJ) Total Switching Losses (mJ)<br>**----- End of picture text -----**<br> www.irf.com 5 **==> picture [193 x 188] intentionally omitted <==** **----- Start of picture text -----**<br> 3.0<br>R =G Ωm<br>T = 150 CJ °<br>V = 480VCC<br>V = 15VGE PEL): |<br>2.0<br>TELLTALESf<br>1.0 P| |P| |SYP| |P| |<br>WiJ<br>PY EE Ld |<br>0.0 SEcsnennne<br>0 4 8 12 16 20<br>I , Collector-to-emitter Current (A)C<br>Total Switching Losses (mJ)<br>**----- End of picture text -----**<br> **==> picture [197 x 188] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>V = 20VGE<br>T = 125 CJ o<br>|<br>ape eee ng<br>Vi,<br> 10 7A ||||<br>a A<br>oe | Hl<br>iyA||<br>SAFE OPERATING AREA<br> 1 AML<br> 1 10 100 1000<br>V , Collector-to-Emitter Voltage (V)CE<br>C<br>I , Collector-to-Emitter Current (A)<br>**----- End of picture text -----**<br> **==> picture [256 x 297] intentionally omitted <==** **----- Start of picture text -----**<br> Collector-to-Emitter Current<br>100 ee<br>ee<br>es ee<br>Pi ft | tt ttt | | Pe<br>SRE EERE EE DY Za<br>PEtA<br>PLLA<br>10<br>a ee s/n<br>oe<br>es ee<br>rity] lf | | |<br>T = 150°CJ<br>|| | | Yo nae<br>T = 125°CJ<br>v/a T = 25°CJ [i<br>1 iy / Eceewene<br>a 0 ee ee ee ee eee<br>ee oeee<br>ee | ee<br>Ee Fee<br>PAE<br>Ae<br>0.1<br>0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2<br> Forward Voltage Drop - V (V)FM<br>F<br>Instantaneous Forward Current - I (A)<br>**----- End of picture text -----**<br> www.irf.com 6 **==> picture [433 x 513] intentionally omitted <==** **----- Start of picture text -----**<br> 100 100<br>V = 200VR V = 200VR<br>LLL T = 125°CJ | T = 125°CJ an oe csmnee:<br>T = 25°CJ T = 25°CJ<br>80<br>ar Lee<br>I = 16AF<br>60<br>I = 8.0AF<br>I = 16AF<br>a 10 e e e<br>Seen FA<br>I = 8.0AF<br>40 Seon Sa<br>e e e —s gan em I = 4.0AF<br>I = 4.0AF<br>20 a aaa<br>a ne<br>0 es 1 Ft LLL<br>100 1000 100 1000<br>di /dt - (A/µs)f di /dt - (A/µs)f<br>Fig. 14 - Typical Reverse Recovery vs. di;/dt Fig. 15 - Typical Recovery Current vs. dir/dt<br>500 10000<br>V = 200VR V = 200VR<br>[LLL T = 125°CJ SS T = 125°CJ<br>T = 25°CJ T = 25°CJ<br>400 Loz} ) a eee<br>1 LLL tr<br>300 il eee<br>I = 16A F FTL 1000 | I = 4.0AF Lg<br>I = 8.0AF<br>| ae<br>200<br>I = 16AF<br>I = 8.0AF<br>SEEDo | OG<br>100<br>| |<br>[yl I F = 4.0A<br>ee"<br>ee O [A] lllF<br>0 Se 100 aa<br>100 1000 100 1000<br>di /dt - (A/µs)f di /dt - (A/µs)f<br>t - (ns)rr I - (A)IRRM<br>RR<br>Q - (nC)<br>di(rec)M/dt - (A/µs)<br>**----- End of picture text -----**<br> www.irf.com 7 **==> picture [146 x 71] intentionally omitted <==** **----- Start of picture text -----**<br> Same type<br>device as<br>D.U.T.<br>80% 430µF<br>of Vce D.U.T.<br>**----- End of picture text -----**<br> **==> picture [187 x 164] intentionally omitted <==** **----- Start of picture text -----**<br> GATE VOLTAGE D.U.T.<br>10% +Vg<br>+Vg<br>DUT VOLTAGE<br>Vce<br>AND CURRENT<br>Vcc [10% Ic] 90% Ic Ipk<br>Ic<br>PAN td(on) tr 5% Vce G<br>t2<br>Eon =<br>t1<br>t1 t2<br>**----- End of picture text -----**<br> **==> picture [186 x 194] intentionally omitted <==** **----- Start of picture text -----**<br> 90% Vge<br>+Vge<br>Vce<br>90% Ic<br>10% Vce<br>Ic<br>Ic<br>5% Ic<br>td(off) tf<br>t1+5µS<br>Eoff =<br>t1<br>t1 t2<br>**----- End of picture text -----**<br> **==> picture [179 x 193] intentionally omitted <==** **----- Start of picture text -----**<br> trr<br>trr<br>Ic — —! Qrr = t<br>tx<br>tx<br>10% Irr<br>10% Vcc<br>Vcc<br>Vpk<br>Irr<br>DIODE RECOVERY<br>WAVEFORMS<br>a eveeecenncsseeeernnnesstecen<br>t4<br>Erec =<br>t3<br>DIODE REVERSE<br>RECOVERY ENERGY<br>t3 t4<br>**----- End of picture text -----**<br> www.irf.com 8 **==> picture [191 x 176] intentionally omitted <==** **----- Start of picture text -----**<br> Vg GATE SIGNAL<br>DEVICE UNDER TEST<br>CURRENT D.U.T.<br>‘<br>’<br>:<br>L171 i<br>VOLTAGE IN D.U.T.<br>LOA't'<br>: CURRENT IN D1<br>’<br>:<br>t 1<br>1 1<br>Ut!<br>t0 t1 t2<br>**----- End of picture text -----**<br> **==> picture [204 x 50] intentionally omitted <==** **----- Start of picture text -----**<br> L D.U.T.<br>1000V V *c<br>50V<br>6000µF<br> 100V<br>**----- End of picture text -----**<br> www.irf.com 9 ## Notes: - Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature - (figure 20) - VCC=80%(VCES), VGE=20V, L=10µH, RG= 50Ω (figure 19) - Pulse width ≤ 80µs; duty factor ≤ 0.1%. - Pulse width 5.0µs, single shot. **==> picture [411 x 337] intentionally omitted <==** **----- Start of picture text -----**<br> 10.54 (.415) 3.78 (.149) - B -<br>2.87 (.113) 10.29 (.405) 3.54 (.139) 4.69 (.185)<br>2.62 (.103) - A - 4.20 (.165) 1.32 (.052)<br>1.22 (.048)<br>6.47 (.255)<br>4 6.10 (.240)<br>15.24 (.600) | an Cc na<br>14.84 (.584) LEAD ASSIGNMENTS<br>ee 1.15 (.045) MIN HEXFETLEAD ASSIGNMENTS 1 - GATE IGBTs, CoPACK<br>1 2 3 1- GATE 2 - DRAIN 1- GATE<br>2- DRAIN 3 - SOURCE 2- COLLECTOR<br>3- SOURCE 4 - DRAIN 3- EMITTER<br>| lar 4- DRAIN 4- COLLECTOR<br>14.09 (.555)<br>13.47 (.530) 4.06 (.160)<br>3.55 (.140)<br>3X2.54 (.100) FE [1.40 (.055)] 1.15 (.045) | 3X0.36 (.014) M B A M [0.93 (.037)] 0.69 (.027) =TI 2.92 (.115)2.64 (.104)3X [0.55 (.022)] 0.46 (.018)<br>2X<br>NOTES:<br> 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.<br> 2 CONTROLLING DIMENSION : INCH 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.<br>Part Marking Information<br>EXAMPLE: T HIS IS AN IRF1010<br>LOT CODE 1789<br>AS S EMB LED ON WW 19, 1997 INT E RNAT IONAL PART NUMBER<br>IN T HE AS S EMB LY LINE "C" RECT IFIER<br>LOGO<br>Note: position indicates "Lead-Free" "P" in assembly line DAT E CODE<br>AS S EMB LY YEAR 7 = 1997<br>LOT CODE WEEK 19<br>L INE C<br>a<br>Data and specifications subject to change without notice.<br>International<br>**----- End of picture text -----**<br> **IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 12/03 www.irf.com 10 Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/
Updated at February 9, 2023
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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