IRFR9020TRPBF

**IRFR9020, IRFU9020, SiHFR9020, SiHFU9020** 

Vishay Siliconix 

www.vishay.com 

## **Power MOSFET** 

**==> picture [212 x 110] intentionally omitted <==**

**----- Start of picture text -----**<br>
S<br>DPAK IPAK<br>(TO-252) (TO-251) G<br>D<br>D<br>S<br>G G [D] [S] D<br>P-Channel MOSFET<br>**----- End of picture text -----**<br>


## **FEATURES** 

- Surface mountable (order as IRFR9020, SiHFR9020) 

- Straight lead option (order as IRFU9020, SiHFU9020) 

- Repetitive avalanche ratings 

- Dynamic dV/dt rating 

- Simple drive requirements 

- Ease of paralleling 

Available 

- Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 

|**PRODUCT SUMMARY**|**PRODUCT SUMMARY**|**PRODUCT SUMMARY**|
|---|---|---|
|VDS(V)|-50||
|RDS(on)(Ω)|VGS= -10 V|0.28|
|Qgmax. (nC)|14||
|Qgs(nC)|6.5||
|Qgd(nC)|6.5||
|Configuration|Single||



## **DESCRIPTION** 

The power MOSFET technology is the key to Vishay’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and diode recovery dV/dt. 

The power MOSFET transistors also feature all of the well established advantages of MOSFET’S such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters. 

Surface-mount packages enhance circuit performance by reducing stray inductances and capacitance. The TO-252 surface mount package brings the advantages of power MOSFET’s to high volume applications where PC board surface mounting is desirable. The surface-mount option IRFR9020, SiHFR9020 is provided on 16mm tape. The straight lead option IRFU9020, SiHFU9020 of the device is called the IPAK (TO-251). 

They are well suited for applications where limited heat dissipation is required such as, computers and peripherals, telecommunication equipment, DC/DC converters, and a wide range of consumer products. 

|**ORDERING INFORMATION**|**ORDERING INFORMATION**|**ORDERING INFORMATION**|**ORDERING INFORMATION**|**ORDERING INFORMATION**|
|---|---|---|---|---|
|**PACKAGE**|**DPAK (TO-252)**|**DPAK (TO-252)**|**DPAK (TO-252)**|**IPAK (TO-251)**|
|Lead (Pb)-free and halogen-free|SiHFR9020-GE3|SiHFR9020TR-GE3a|SiHFR9020TRL-GE3a|SiHFU9020-GE3|
||IRFR9020TRLPBF-BE3ab|-|-|-|
|Lead (Pb)-free|IRFR9020PbF|IRFR9020TRPbFa|IRFR9020TRLPbFa|IRFU9020PbF|



## **Notes** 

a. See device orientation 

b. “-BE3” denotes alternate manufacturing location 

S21-0771-Rev. E, 19-Jul-2021 

Document Number: 90350 

**1** 

For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

## **IRFR9020, IRFU9020, SiHFR9020, SiHFU9020** 

www.vishay.com 

Vishay Siliconix 

|**ABSOLUTE MAXIMUM RATINGS**(TC= 25 °C,unless otherwise noted)|**ABSOLUTE MAXIMUM RATINGS**(TC= 25 °C,unless otherwise noted)|**ABSOLUTE MAXIMUM RATINGS**(TC= 25 °C,unless otherwise noted)|**ABSOLUTE MAXIMUM RATINGS**(TC= 25 °C,unless otherwise noted)|||
|---|---|---|---|---|---|
|**PARAMETER**|||**SYMBOL**|**LIMIT**|**UNIT**|
|Drain-source voltage|||VDS|-50|V|
|Gate-source voltage|||VGS|± 20||
|Continuous drain current|VGSat -10 V|TC= 25 °C|ID|-9.9|A|
|||TC= 100 °C||-6.3||
|Pulsed drain currenta|||IDM|-40||
|Linear deratingfactor||||0.33|W/°C|
|Single pulse avalanche energyb|||EAS|250|mJ|
|Repetitive avalanche currenta|||IAR|-9.9|A|
|Repetitive avalanche energya|||EAR|4.2|mJ|
|Maximum power dissipation|TC=|25 °C|PD|42|W|
|Peak diode recovery dV/dtc|||dV/dt|5.8|V/ns|
|Operatingjunction and storage temperature range|||TJ, Tstg|-55 to +150|°C|
|Solderingrecommendations (peak temperature)d|for|10 s||300||



## **Notes** 

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 16) b. VDD = -25 V, starting TJ = 25 °C, L = 5.1 mH, Rg = 25 Ω, peak IL = -9.9 A c. ISD ≤ -9.9 A, dI/dt ≤ -120 A/μs, VDD ≤ 40 V, TJ ≤ 150 °C d. 0.063" (1.6 mm) from case 

e. When mounted on 1" square PCB (FR-4 or G-10 material) 

|**THERMAL RESISTANCE RATINGS**|**THERMAL RESISTANCE RATINGS**|**THERMAL RESISTANCE RATINGS**|**THERMAL RESISTANCE RATINGS**|**THERMAL RESISTANCE RATINGS**|**THERMAL RESISTANCE RATINGS**|
|---|---|---|---|---|---|
|**PARAMETER**|**SYMBOL**|**MIN.**|**TYP.**|**MAX.**|**UNIT**|
|Maximum junction-to-ambient|RthJA|-|-|110|°C/W|
|Case-to-sink|RthCS|-|1.7|-||
|Maximum junction-to-case (drain)|RthJC|-|-|3.0||



|**SPECIFICATIONS**(TJ= 25 °C, unless otherwise noted)|**SPECIFICATIONS**(TJ= 25 °C, unless otherwise noted)|**SPECIFICATIONS**(TJ= 25 °C, unless otherwise noted)|**SPECIFICATIONS**(TJ= 25 °C, unless otherwise noted)|||||
|---|---|---|---|---|---|---|---|
|**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**||**MIN.**|**TYP.**|**MAX.**|**UNIT**|
|**Static**||||||||
|Drain-source breakdown voltage|VDS|VGS= 0 V, ID= -250 μA||- 50|-|-|V|
|Gate-source threshold voltage|VGS(th)|VDS= VGS, ID= -50 μA||- 2.0|-|- 4.0|V|
|Gate-source leakage|IGSS|VGS= ±20 V||-|-|± 500|nA|
|Zero gate voltage drain current|IDSS|VDS= max. rating, VGS= 0 V||-|-|250|μA|
|||VDS= 0.8 x max. rating, VGS= 0 V, TJ= 125 °C||-|-|1000||
|Drain-source on-state resistance|RDS(on)|VGS= -10 V|ID= 5.7 Ab|-|0.20|0.28|Ω|
|Forward transconductance|gfs|VDS ≤-50 V, IDS= - 5.7 A||2.3|3.5|-|S|
|**Dynamic**||||||||
|Input capacitance|Ciss|VGS= 0 V,<br>VDS= - 25 V,<br>f = 1.0 MHz, see fig. 9||-|490|-|pF|
|Output capacitance|Coss|||-|320|-||
|Reverse transfer capacitance|Crss|||-|70|-||
|Totalgate charge|Qg|VGS= -10 V|ID= -9.7 A, VDS= 0.8 x max.<br>rating, see fig. 18 (Independent<br>operating temperature)|-|9.4|14|nC|
|Gate-source charge|Qgs|||-|4.3|6.5||
|Gate-drain charge|Qgd|||-|4.3|6.5||
|Turn-on delay time|td(on)|VDD= -25 V, ID= -9.7 A,<br>Rg= 18Ω, RD= 2.4Ω, see fig. 17<br>(Independent operating temperature)||-|8.2|12|ns|
|Rise time|tr|||-|57|66||
|Turn-off delay time|td(off)|||-|12|18||
|Fall time|tf|||-|25|38||
|Internal drain inductance|LD|Between lead, 6 mm (0.25")<br>from package and center of<br>die contact.<br>D<br>S<br>G||-|4.5|-|nH|
|Internal source inductance|LS|||-|7.5|-||



S21-0771-Rev. E, 19-Jul-2021 

Document Number: 90350 

**2** 

For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**==> picture [77 x 24] intentionally omitted <==**

**----- Start of picture text -----**<br>
—<br>www.vishay.com<br>**----- End of picture text -----**<br>


## **IRFR9020, IRFU9020, SiHFR9020, SiHFU9020** 

## Vishay Siliconix 

## **SPECIFICATIONS** (TJ = 25 °C, unless otherwise noted) 

|**SPECIFICATIONS**(TJ = 25 °C, unless otherwise noted)TJ = 25 °C, unless otherwise noted)J = 25 °C, unless otherwise noted)= 25 °C, unless otherwise noted), unless otherwise noted)unless otherwise noted))|**SPECIFICATIONS**(TJ = 25 °C, unless otherwise noted)TJ = 25 °C, unless otherwise noted)J = 25 °C, unless otherwise noted)= 25 °C, unless otherwise noted), unless otherwise noted)unless otherwise noted))|**SPECIFICATIONS**(TJ = 25 °C, unless otherwise noted)TJ = 25 °C, unless otherwise noted)J = 25 °C, unless otherwise noted)= 25 °C, unless otherwise noted), unless otherwise noted)unless otherwise noted))|**SPECIFICATIONS**(TJ = 25 °C, unless otherwise noted)TJ = 25 °C, unless otherwise noted)J = 25 °C, unless otherwise noted)= 25 °C, unless otherwise noted), unless otherwise noted)unless otherwise noted))|**SPECIFICATIONS**(TJ = 25 °C, unless otherwise noted)TJ = 25 °C, unless otherwise noted)J = 25 °C, unless otherwise noted)= 25 °C, unless otherwise noted), unless otherwise noted)unless otherwise noted))|**SPECIFICATIONS**(TJ = 25 °C, unless otherwise noted)TJ = 25 °C, unless otherwise noted)J = 25 °C, unless otherwise noted)= 25 °C, unless otherwise noted), unless otherwise noted)unless otherwise noted))|**SPECIFICATIONS**(TJ = 25 °C, unless otherwise noted)TJ = 25 °C, unless otherwise noted)J = 25 °C, unless otherwise noted)= 25 °C, unless otherwise noted), unless otherwise noted)unless otherwise noted))|
|---|---|---|---|---|---|---|
|**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**|**MIN.**|**TYP.**|**MAX.**|**UNIT**|
|**Drain-source body diode characteristics**|||||||
|Continuous source-drain diode current|IS|MOSFET symbol<br>showing the integral reverse<br>p - n junction diode<br>S<br>D<br>G|-|-|-9.9|A|
|Pulsed diode forward currenta|ISM||-|-|- 40||
|Body diode voltage|VSD|TJ= 25 °C, IS= - 9.9 A, VGS= 0 Vb|-|-|- 6.3|V|
|Body diode reverse recovery time|trr|TJ= 25 °C, IF= - 9,7 A, dI/dt = 100 A/μsb|56|110|280|ns|
|Body diode reverse recovery charge|Qrr||0.17|0.34|0.85|nC|
|Forward turn-on time|ton|Intrinsic turn-on time is negligible (turn-on is dominated by LSand LD)|||||



## **Notes** 

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 16) b. Pulse width ≤ 300 μs; duty cycle ≤ 2 % 

## **TYPICAL CHARACTERISTICS** (25 °C, unless otherwise noted) 

**Fig. 1 -  Typical Output Characteristics** 

**Fig. 3 - Typical Saturation Characteristics** 

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 Fig. 2 -  Typical Transfer Characteristics<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
 Fig. 4 - Maximum Safe Operating Area<br>**----- End of picture text -----**<br>


S21-0771-Rev. E, 19-Jul-2021 

Document Number: 90350 

**3** For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

## www.vishay.com 

## **IRFR9020** ~~a~~ **, IRFU9020, SiHFR9020, SiHFU9020** Vishay Siliconix 

**Fig. 5 - Typical Transconductance vs. Drain Current** 

**Fig. 8 - Breakdown Voltage vs. Temperature** 

**Fig. 6 - Typical Source-Drain Diode Forward Voltage** 

**Fig. 9 - Typical Capacitance vs. Drain-to-Source Voltage** 

**Fig. 7 - Breakdown Voltage vs. Temperature** 

**Fig. 10 - Typical Gate Charge vs. Gate-to-Source Voltage** 

Document Number: 90350 

S21-0771-Rev. E, 19-Jul-2021 

**4** For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**IRFR9020, IRFU9020, SiHFR9020, SiHFU9020** 

## www.vishay.com 

**Fig. 11 - Typical On-Resistance vs. Drain Current** 

## Vishay Siliconix 

**Fig. 14 - Unclamped Inductive Test Circuit** 

**==> picture [139 x 94] intentionally omitted <==**

**----- Start of picture text -----**<br>
IAS -—- —_—-<br>\ |fo<br>VDS \ IL | f<br>NO]<br>MLN<br>VDD<br>k— tp ><br>\<br>VDS<br>**----- End of picture text -----**<br>


**Fig. 12 - Maximum Drain Current vs. Case Temperature** 

**Fig. 15 - Unclamped Inductive Waveforms** 

**Fig. 13 - Maximum Avalanche vs. Starting Junction Temperature** 

Document Number: 90350 

S21-0771-Rev. E, 19-Jul-2021 

**5** For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**IRFR9020, IRFU9020, SiHFR9020, SiHFU9020** 

www.vishay.com 

Vishay Siliconix 

Fig. 16 - Maximum Effective Transient Thermal Impedance, Junction-to-Case vs. Pulse Duration 

**==> picture [340 x 108] intentionally omitted <==**

**----- Start of picture text -----**<br>
td(on) tr td(off) tf<br>VGS ! | 1 QG<br>10 % - 10 V<br>Via<br>QGS QGD<br>90 %VDS X\__/ VG<br>Charge<br>**----- End of picture text -----**<br>


**Fig. 17 - Switching Time Waveforms** 

**Fig. 19 - Basic Gate Charge Waveform** 

**Fig. 18 - Switching Time Test Circuit** 

**Fig. 20 - Gate Charge Test Circuit** 

Document Number: 90350 

S21-0771-Rev. E, 19-Jul-2021 

**6** 

For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**IRFR9020, IRFU9020, SiHFR9020, SiHFU9020** 

Vishay Siliconix 

**==> picture [77 x 10] intentionally omitted <==**

**----- Start of picture text -----**<br>
www.vishay.com<br>**----- End of picture text -----**<br>


## **Peak Diode Recovery dV/dt Test Circuit** 

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**----- Start of picture text -----**<br>
D.U.T.<br>+<br>Circuit layout considerations<br>• Low stray inductance<br>• Ground plane<br>• Low leakage inductance<br>current transformer<br>-<br>+<br>-<br>Rg • dV/dt controlled by Rg +<br>• • ID.U.T. - device under testSD controlled by duty factor “D” - VDD<br>Note<br>• Compliment N-Channel of D.U.T. for driver<br>- +<br>**----- End of picture text -----**<br>


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Driver gate drive<br>P.W.<br>Period D =<br>P.W. Period<br>VGS = - 10 V [a]<br>D.U.T. lSD waveform<br>Reverse<br>recovery Body diode forward<br>current current<br>dI/dt<br>D.U.T. VDS waveform<br>Diode recovery<br>dV/dt<br>VDD<br>Re-applied<br>voltage<br>Body diode forward drop<br>Inductor current<br>Ripple ≤ 5 % ISD<br>Note<br>a. VGS = - 5 V for logic level and - 3 V drive devices<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
 Fig. 21 - For P-Channel<br>**----- End of picture text -----**<br>


_Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?90350._ 

S21-0771-Rev. E, 19-Jul-2021 

Document Number: 90350 

**7** 

For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**Package Information** 

Vishay Siliconix 

**==> picture [59 x 48] intentionally omitted <==**

www.vishay.com 

## **TO-252AA Case Outline** 

## **VERSION 1: FACILITY CODE = Y** 

**==> picture [364 x 211] intentionally omitted <==**

**----- Start of picture text -----**<br>
E A<br>C2<br>b3<br>E1<br>b b2 C<br>e<br>A1<br>e1<br>L3<br>D1<br>D<br>H<br>L4<br>L5 L<br>gage plane height (0.5 mm)<br>**----- End of picture text -----**<br>


|b|b2<br>e1<br>gage plane height (0.5 mm)<br>e|b2<br>e1<br>gage plane height (0.5 mm)<br>e|
|---|---|---|
||**MILLIMETERS**||
|**DIM.**|**MIN.**|**MAX.**|
|A|2.18|2.38|
|A1|-|0.127|
|b|0.64|0.88|
|b2|0.76|1.14|
|b3|4.95|5.46|
|C|0.46|0.61|
|C2|0.46|0.89|
|D|5.97|6.22|
|D1|4.10|-|
|E|6.35|6.73|
|E1|4.32|-|
|H|9.40|10.41|
|e|2.28 BSC||
|e1|4.56 BSC||
|L|1.40|1.78|
|L3|0.89|1.27|
|L4|-|1.02|
|L5|1.01|1.52|



## **Note** 

- Dimension L3 is for reference only 

Revision: 16-Dec-2019 

Document Number: 71197 

**1** For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**Package Information** 

Vishay Siliconix 

**==> picture [59 x 48] intentionally omitted <==**

www.vishay.com 

## **VERSION 2: FACILITY CODE = N** 

**==> picture [338 x 254] intentionally omitted <==**

**----- Start of picture text -----**<br>
e<br>E A<br>b3<br>E1<br>e c2 E1/2<br>2x b2<br>2x e 3x b 0.25 C A B DETAIL "B" (b)<br>H<br>C<br>b1<br>GAUGE<br>PLANE SEATING DETAIL "B"<br>C C<br>L PLANE<br>(L1)<br>(3°) (3°)<br>θ<br>θ<br>L3 D1<br>D<br>H<br>L6<br>L5<br>L4<br>c<br>c1<br>L2 A1<br>θ<br>**----- End of picture text -----**<br>


||**MILLIMETERS**|**MILLIMETERS**|
|---|---|---|
|**DIM.**|**MIN.**|**MAX.**|
|A|2.18|2.39|
|A1|-|0.13|
|b|0.65|0.89|
|b1|0.64|0.79|
|b2|0.76|1.13|
|b3|4.95|5.46|
|c|0.46|0.61|
|c1|0.41|0.56|
|c2|0.46|0.60|
|D|5.97|6.22|
|D1|5.21|-|
|E|6.35|6.73|
|E1|4.32|-|
|e|2.29 BSC||
|H|9.94|10.34|



||**MILLIMETERS**|**MILLIMETERS**|
|---|---|---|
|**DIM.**|**MIN.**|**MAX.**|
|L|1.50|1.78|
|L1|2.74 ref.||
|L2|0.51 BSC||
|L3|0.89|1.27|
|L4|-|1.02|
|L5|1.14|1.49|
|L6|0.65|0.85|
||0°|10°|
|1|0°|15°|
|2|25°|35°|



## **Notes** 

- Dimensioning and tolerance confirm to ASME Y14.5M-1994 

- All dimensions are in millimeters. Angles are in degrees 

- Heat sink side flash is max. 0.8 mm 

- Radius on terminal is optional 

ECN: E19-0649-Rev. Q, 16-Dec-2019 DWG: 5347 

Revision: 16-Dec-2019 

Document Number: 71197 

**2** 

For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**Package Information** Vishay Siliconix 

www.vishay.com 

## **Case Outline for TO-251AA (High Voltage)** 

## **OPTION 1:** 

**==> picture [378 x 278] intentionally omitted <==**

**----- Start of picture text -----**<br>
4 3 A<br>E1 Thermal PAD E A<br>4<br>b4 0.010 0.25 M C A B c2<br>L2 4 A<br>θ2 θ1<br>D1 4<br>B<br>C<br>3<br>Seating<br>5 plane<br>L1 L3 C C<br>(Datum A)<br>L<br>B B<br>A<br>A1<br>3  x b2<br>c<br>3 x b<br>View A - A 2 x e 0.010 0.25 M C A B<br>Base<br>5 metal<br>Plating<br>b1, b3<br>Lead tip<br>(c) c1 5<br>( b, b2)<br>Section B - B and C - C<br>D<br>**----- End of picture text -----**<br>


||**MILLIMETERS**|**MILLIMETERS**|**INCHES**|**INCHES**||**MILLIMETERS**<br>**INCHES**<br>**DIM.**<br>**MIN.**<br>**MAX.**<br>**MIN.**<br>**MAX.**<br>D1<br>5.21<br>-<br>0.205<br>-<br>E<br>6.35<br>6.73<br>0.250<br>0.265<br>E1<br>4.32<br>-<br>0.170<br>-<br>e<br>2.29 BSC<br>2.29 BSC<br>L<br>8.89<br>9.65<br>0.350<br>0.380<br>L1<br>1.91<br>2.29<br>0.075<br>0.090<br>L2<br>0.89<br>1.27<br>0.035<br>0.050<br>L3<br>1.14<br>1.52<br>0.045<br>0.060<br>θ1<br>0'<br>15'<br>0'<br>15'<br>θ2<br>25'<br>35'<br>25'<br>35'|**MILLIMETERS**|**MILLIMETERS**|**INCHES**|**INCHES**|
|---|---|---|---|---|---|---|---|---|---|---|
|**DIM.**|**MIN.**|**MAX.**|**MIN.**|**MAX.**|||**MIN.**|**MAX.**|**MIN.**|**MAX.**|
|A|2.18|2.39|0.086|0.094|||5.21|-|0.205|-|
|A1|0.89|1.14|0.035|0.045|||6.35|6.73|0.250|0.265|
|b|0.64|0.89|0.025|0.035|||4.32|-|0.170|-|
|b1|0.65|0.79|0.026|0.031|||2.29 BSC||2.29 BSC||
|b2|0.76|1.14|0.030|0.045|||8.89|9.65|0.350|0.380|
|b3|0.76|1.04|0.030|0.041|||1.91|2.29|0.075|0.090|
|b4|4.95|5.46|0.195|0.215|||0.89|1.27|0.035|0.050|
|c|0.46|0.61|0.018|0.024|||1.14|1.52|0.045|0.060|
|c1|0.41|0.56|0.016|0.022|||0'|15'|0'|15'|
|c2|0.46|0.86|0.018|0.034|||25'|35'|25'|35'|
|D|5.97|6.22|0.235|0.245|||||||
|ECN: E21-0605-Rev. B, 25-Oct-2021<br>DWG: 5968|||||||||||
||||||||||||



## **Notes** 

- Dimensioning and tolerancing per ASME Y14.5M-1994 

- Dimension are shown in inches and millimeters 

- Dimension D and E do not include mold flash. Mold flash shall not exceed 0.13 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body 

- Thermal pad contour optional with dimensions b4, L2, E1 and D1 

- Lead dimension uncontrolled in L3 

- Dimension b1, b3 and c1 apply to base metal only 

- Outline conforms to JEDEC[®] outline TO-251AA 

Revision: 25-Oct-2021 

Document Number: 91362 

**1** 

For technical questions, contact: hvmos.techsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**Package Information** 

Vishay Siliconix 

**==> picture [77 x 10] intentionally omitted <==**

**----- Start of picture text -----**<br>
www.vishay.com<br>**----- End of picture text -----**<br>


## **OPTION 2: FACILITY CODE = N** 

|Ø 1.00<br>x 0.10 deep<br>L2<br>L4<br>L3|Ø 1.00<br>x 0.10 deep<br>L2<br>L4<br>L3|L2||E<br>b4<br>CL|E<br>b4<br>CL|E<br>b4<br>CL||D<br>L1<br>C<br>B<br>L|θ1<br><br>θ1|θ1<br><br>θ1|θ1<br><br>θ1|||A1<br>D1<br>Third angle<br>projection|||||||c1<br>D2|c1<br>D2|c1<br>D2|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|||||||||||||||||||||||||
|||||||||||θ1||c|A<br>2|A1||||||||||
||||||||||||||||D1||E1|||||||
|||||||||||||||||||||||||
|||||||||||||||||||||||D2||
|||||||||||θ1||||||||||||||
|||||||||||||||||||||||||
|||||||||||||||||||||||||
|||L4||||||||||||||||||||||
|||||b2<br>b<br>e<br>C<br>B||||||||||||||||||||
|||L3||||||||||||||||||||||
|||||||||||||||||||||||||
|||||||||||||||||||||||||
||||||||||||||c|||c|b1, b3<br>b, b2<br><br>Section “B-B” a|||nd “C-C”||||
||||||e|||||||||||||||||||
|||||||||θ2||||||||||||||||
|||||||||||||||||||||||||
|||||||||||||||||||||||||
|||||||||||||||||||||||||
|**DIM.**|||**MIN.**|||**MAX.**||**MAX.**||||||**DIM.**|||**MIN.**|||**MAX.**|||**MAX.**|
|A|||2.180|||2.285||2.390||||||D2|||5.380|||-|||-|
|A1|||0.890|||1.015||1.140||||||E|||6.350|||6.540|||6.730|
|b|||0.640|||0.765||0.890||||||E1|||4.32|||-|||-|
|b1|||0.640|||0.715||0.790||||||e|||2.29 BSC|||||||
|b2|||0.760|||0.950||1.140||||||L|||8.890||9.270||||9.650|
|b3|||0.760|||0.900||1.040||||||L1|||1.910||2.100||||2.290|
|b4|||4.950|||5.205||5.460||||||L2|||0.890||1.080||||1.270|
|c|||0.460|||-||0.610||||||L3|||1.140||1.330||||1.520|
|c1|||0.410|||-||0.560||||||L4|||1.300||1.400||||1.500|
|c2|||0.460|||-||0.610||||||θ1|||0°||7.5°||||15°|
|D|||5.970|||6.095||6.220||||||θ2|||4°||-||||-|
|D1|||4.300|||-||-||||||||||||||||
|ECN: E21-0605-Rev. B, 25-Oct-2021<br>DWG: 5968||||||||||||||||||||||||
|||||||||||||||||||||||||



## **Notes** 

- Dimensioning and tolerancing per ASME Y14.5M-1994 

- All dimension are in millimeters, angles are in degrees 

- Heat sink side flash is max. 0.8 mm 

Revision: 25-Oct-2021 

Document Number: 91362 

**2** 

For technical questions, contact: hvmos.techsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**Application Note 826** 

**==> picture [60 x 50] intentionally omitted <==**

## Vishay Siliconix 

## **RECOMMENDED MINIMUM PADS FOR DPAK (TO-252)** 

**==> picture [203 x 287] intentionally omitted <==**

**----- Start of picture text -----**<br>
0.224<br>(5.690)<br>0.180 0.055<br>(4.572) (1.397)<br>0.243 (6.180)<br>0.420<br>(10.668)<br>0.087 (2.202)<br>0.090 (2.286)<br>**----- End of picture text -----**<br>


Recommended Minimum Pads Dimensions in Inches/(mm) 

> Return to Index Return to Index 

Document Number: 72594 Revision: 21-Jan-08 

www.vishay.com 

3 

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Revision: 09-Jul-2021 

Document Number: 91000 

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