IRFR9020PBF

**IRFR9020, IRFU9020, SiHFR9020, SiHFU9020** 

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www.vishay.com 

## Vishay Siliconix 

## **Power MOSFET** 

|**PRODUCT SUMMARY**|**PRODUCT SUMMARY**|**PRODUCT SUMMARY**|
|---|---|---|
|VDS(V)|- 50||
|RDS(on)()|VGS= - 10 V|0.28|
|Qg(Max.) (nC)|14||
|Qgs(nC)|6.5||
|Qgd(nC)|6.5||
|Configuration|Single||



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S<br>DPAK IPAK<br>(TO-252) (TO-251)<br>D G<br>D<br>S<br>G G [D] [S]<br>D<br>P-Channel MOSFET<br>**----- End of picture text -----**<br>


## **FEATURES** 

- Surface Mountable (Order As IRFR9020, SiHFR9020) 

- Straight Lead Option (Order As IRFU9020, SiHFU9020) 

- Repetitive Avalanche Ratings 

- Dynamic dV/dt Rating 

- Simple Drive Requirements 

- Ease of Paralleling 

- Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 

## **DESCRIPTION** 

The power MOSFET technology is the key to Vishay’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and diode recovery dV/dt. 

The power MOSFET transistors also feature all of the well established advantages of MOSFET’S such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters. 

Surface mount packages enhance circuit performance by reducing stray inductances and capacitance. The TO-252 surface mount package brings the advantages of power MOSFET’s to high volume applications where PC board surface mounting is desirable. The surface mount option IRFR9020, SiHFR9020 is provided on 16mm tape. The straight lead option IRFU9020, SiHFU9020 of the device is called the IPAK (TO-251). 

They are well suited for applications where limited heat dissipation is required such as, computers and peripherals, telecommunication equipment, DC/DC converters, and a wide range of consumer products. 

|**ORDERING INFORMATION**|**ORDERING INFORMATION**|**ORDERING INFORMATION**|**ORDERING INFORMATION**|**ORDERING INFORMATION**|
|---|---|---|---|---|
|Package|DPAK(TO-252)|DPAK(TO-252)|DPAK(TO-252)|IPAK(TO-251)|
|Lead(Pb)-free and Halogen-free|SiHFR9020-GE3|SiHFR9020TR-GE3a|SiHFR9020TRL-GE3a|SiHFU9020-GE3|
|Lead (Pb)-free|IRFR9020PbF|IRFR9020TRPbFa|IRFR9020TRLPbFa|IRFU9020PbF|
||SiHFR9020-E3|SiHFR9020T-E3a|SiHFR9020TL-E3a|SiHFU9020-E3|



## **Note** 

a. See device orientation. 

|**ABSOLUTE MAXIMUM RATINGS**(TC= 25 °C,unless otherwise noted)|**ABSOLUTE MAXIMUM RATINGS**(TC= 25 °C,unless otherwise noted)|**ABSOLUTE MAXIMUM RATINGS**(TC= 25 °C,unless otherwise noted)|**ABSOLUTE MAXIMUM RATINGS**(TC= 25 °C,unless otherwise noted)|||
|---|---|---|---|---|---|
|**PARAMETER**|||**SYMBOL**|**LIMIT**|**UNIT**|
|Drain-Source Voltage|||VDS|- 50|V|
|Gate-Source Voltage|||VGS|± 20||
|Continuous Drain Current|VGSat - 10 V|TC= 25 °C|ID|- 9.9|A|
|||TC= 100 °C||- 6.3||
|Pulsed Drain Currenta|||IDM|- 40||
|Linear DeratingFactor||||0.33|W/°C|
|Single Pulse Avalanche Energyb|||EAS|250|mJ|
|Repetitive Avalanche Currenta|||IAR|- 9.9|A|
|Repetitive Avalanche Energya|||EAR|4.2|mJ|
|Maximum Power Dissipation|TC=|25 °C|PD|42|W|
|Peak Diode RecoverydV/dtc|||dV/dt|5.8|V/ns|
|OperatingJunction and Storage Temperature Range|||TJ, Tstg|- 55 to + 150|°C|
|SolderingRecommendations (Peak Temperature)d|for|10 s||300||



## **Notes** 

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 16). b. VDD = - 25 V, Starting TJ = 25 °C, L = 5.1 mH, Rg = 25  , Peak IL = - 9.9 A c. ISD  - 9.9 A, dI/dt  -120 A/μs, VDD  40 V, TJ  150 °C. d. 0.063" (1.6 mm) from case. 

e. When mounted on 1" square PCB (FR-4 or G-10 material). 

S13-0169-Rev. D, 04-Feb-13 

Document Number: 90350 

**1** 

For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**IRFR9020, IRFU9020, SiHFR9020, SiHFU9020** 

Vishay Siliconix 

**==> picture [59 x 48] intentionally omitted <==**

www.vishay.com 

## **THERMAL RESISTANCE RATINGS** 

|**THERMAL RESISTANCE RATINGS**|**THERMAL RESISTANCE RATINGS**|**THERMAL RESISTANCE RATINGS**|**THERMAL RESISTANCE RATINGS**|**THERMAL RESISTANCE RATINGS**|**THERMAL RESISTANCE RATINGS**|
|---|---|---|---|---|---|
|**PARAMETER**|**SYMBOL**|**MIN.**|**TYP.**|**MAX.**|**UNIT**|
|Maximum Junction-to-Ambient|RthJA|-|-|110|°C/W|
|Case-to-Sink|RthCS|-|1.7|-||
|Maximum Junction-to-Case (Drain)|RthJC|-|-|3.0||



|**SPECIFICATIONS**(TJ= 25 °C,unless otherwise noted)|**SPECIFICATIONS**(TJ= 25 °C,unless otherwise noted)|**SPECIFICATIONS**(TJ= 25 °C,unless otherwise noted)|**SPECIFICATIONS**(TJ= 25 °C,unless otherwise noted)|||||
|---|---|---|---|---|---|---|---|
|**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**||**MIN.**|**TYP.**|**MAX.**|**UNIT**|
|**Static**||||||||
|Drain-Source Breakdown Voltage|VDS|VGS= 0 V, ID= - 250 μA||- 50|-|-|V|
|Gate-Source Threshold Voltage|VGS(th)|VDS= VGS, ID= - 250 μA||- 2.0|-|- 4.0|V|
|Gate-Source Leakage|IGSS|VGS= ± 20 V||-|-|± 500|nA|
|Zero Gate Voltage Drain Current|IDSS|VDS= max. rating, VGS= 0 V||-|-|250|μA|
|||VDS= 0.8 x max. rating, VGS= 0 V, TJ= 125 °C||-|-|1000||
|Drain-Source On-State Resistance|RDS(on)|VGS= - 10 V|ID= 5.7 Ab|-|0.20|0.28||
|Forward Transconductance|gfs|VDS - 50 V, IDS= - 5.7 A||2.3|3.5|-|S|
|**Dynamic**||||||||
|Input Capacitance|Ciss|VGS= 0 V,<br>VDS= - 25 V,<br>f = 1.0 MHz, see fig. 9||-|490|-|pF|
|Output Capacitance|Coss|||-|320|-||
|Reverse Transfer Capacitance|Crss|||-|70|-||
|Total Gate Charge|Qg|VGS= - 10 V|ID= - 9.7 A, VDS= 0.8 x max.<br>rating, see fig. 18<br>(Independent operating<br>temperature)|-|9.4|14|nC|
|Gate-Source Charge|Qgs|||-|4.3|6.5||
|Gate-Drain Charge|Qgd|||-|4.3|6.5||
|Turn-On Delay Time|td(on)|VDD= - 25 V, ID= - 9.7 A,<br>Rg= 18, RD= 2.4, see fig. 17<br>(Independent operating temperature)||-|8.2|12|ns|
|Rise Time|tr|||-|57|66||
|Turn-Off Delay Time|td(off)|||-|12|18||
|Fall Time|tf|||-|25|38||
|Internal Drain Inductance|LD|Between lead,<br>6 mm (0.25") from<br>package and center of<br>die contact.<br>D<br>S<br>G||-|4.5|-|nH|
|Internal Source Inductance|LS|||-|7.5|-||
|**Drain-Source Body Diode Characteristics**||||||||
|Continuous Source-Drain Diode Current|IS|MOSFET symbol<br>showing the<br>integral reverse<br>p - n junction diode<br>S<br>D<br>G||-|-|- 9.9|A|
|Pulsed Diode Forward Currenta|ISM|||-|-|- 40||
|Body Diode Voltage|VSD|TJ= 25 °C, IS= - 9.9 A, VGS= 0 Vb||-|-|- 6.3|V|
|Body Diode Reverse Recovery Time|trr|TJ= 25 °C, IF= - 9,7 A, dI/dt = 100 A/μsb||56|110|280|ns|
|Body Diode Reverse Recovery Charge|Qrr|||0.17|0.34|0.85|nC|
|Forward Turn-On Time|ton|Intrinsic turn-on time is negligible (turn-on is dominated by LSand LD)||||||



## **Notes** 

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 16). 

b. Pulse width  300 μs; duty cycle  2 %. 

S13-0169-Rev. D, 04-Feb-13 

Document Number: 90350 

**2** 

For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

## www.vishay.com 

## ~~a~~ **IRFR9020, IRFU9020, SiHFR9020, SiHFU9020** Vishay Siliconix 

## **TYPICAL CHARACTERISTICS** (25 °C, unless otherwise noted) 

**Fig. 1 - Typical Output Characteristics** 

**Fig. 4 - Maximum Safe Operating Area** 

**Fig. 2 - Typical Transfer Characteristics** 

**Fig. 5 - Typical Transconductance vs. Drain Current** 

**Fig. 3 - Typical Saturation Characteristics** 

**Fig. 6 - Typical Source-Drain Diode Forward Voltage** 

S13-0169-Rev. D, 04-Feb-13 

Document Number: 90350 

**3** For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

## **IRFR9020, IRFU9020, SiHFR9020, SiHFU9020** 

## www.vishay.com 

## Vishay Siliconix 

**Fig. 7 - Breakdown Voltage vs. Temperature** 

**Fig. 9 - Typical Capacitance vs. Drain-to-Source Voltage** 

**Fig. 8 - Normalized On-Resistance vs. Temperature** 

**Fig. 10 - Typical Gate Charge vs. Gate-to-Source Voltage** 

S13-0169-Rev. D, 04-Feb-13 

Document Number: 90350 

**4** For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**IRFR9020, IRFU9020, SiHFR9020, SiHFU9020** 

~~—~~ www.vishay.com 

Vishay Siliconix 

**Fig. 11 - Typical On-Resistance vs. Drain Current** 

**Fig. 13 - Maximum Avalanche vs. Starting Junction Temperature** 

**Fig. 14 - Unclamped Inductive Test Circuit** 

**Fig. 12 - Maximum Drain Current vs. Case Temperature** 

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IAS<br>\ |<br>—<br>\ |<br>VDS IL \ |]<br>\\i \ VDD<br>— tp<br>VDS<br>**----- End of picture text -----**<br>


**Fig. 15 - Unclamped Inductive Waveforms** 

S13-0169-Rev. D, 04-Feb-13 

Document Number: 90350 

**5** For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**IRFR9020, IRFU9020, SiHFR9020, SiHFU9020** 

Vishay Siliconix 

## www.vishay.com 

**Fig. 16 - Maximum Effective Transient Thermal Impedance, Junction-to-Case vs. Pulse Duration** 

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td(on) tr td(off) tf<br>VGS tr 1 QG<br>10 % nn a 2 - 10 V ES<br>Ve<br>1<br>90 %VDS X\L_/ ! V | G - QGS 4S QGD<br>Charge<br>**----- End of picture text -----**<br>


**Fig. 17 - Switching Time Waveforms** 

**Fig. 19 - Basic Gate Charge Waveform** 

**Fig. 18 - Switching Time Test Circuit** 

**Fig. 20 - Gate Charge Test Circuit** 

S13-0169-Rev. D, 04-Feb-13 

Document Number: 90350 

**6** 

For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**IRFR9020, IRFU9020, SiHFR9020, SiHFU9020** 

Vishay Siliconix 

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www.vishay.com<br>**----- End of picture text -----**<br>


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Peak Diode Recovery dV/dt Test Circuit<br>**----- End of picture text -----**<br>


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D.U.T.<br>+<br>Circuit layout considerations<br>• Low stray inductance<br>• Ground plane<br>• Low leakage inductance<br>current transformer<br>-<br>+<br>-<br>Rg • dV/dt controlled by Rg +<br>• • ID.U.T. - device under testSD controlled by duty factor “D” - VDD<br>Note<br>• Compliment N-Channel of D.U.T. for driver<br>- +<br>**----- End of picture text -----**<br>


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Driver gate drive<br>P.W.<br>Period D =<br>P.W. Period<br>VGS = - 10 V [a]<br>D.U.T. lSD waveform<br>Reverse<br>recovery Body diode forward<br>current current<br>dI/dt<br>D.U.T. VDS waveform<br>Diode recovery<br>dV/dt<br>VDD<br>Re-applied<br>voltage<br>Body diode forward drop<br>Inductor current<br>Ripple ≤ 5 % ISD<br>Note<br>a. VGS = - 5 V for logic level and - 3 V drive devices<br>**----- End of picture text -----**<br>


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Fig. 21 - For P-Channel<br>**----- End of picture text -----**<br>


_Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?90350._ 

S13-0169-Rev. D, 04-Feb-13 

Document Number: 90350 

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For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**Package Information** 

Vishay Siliconix 

www.vishay.com 

## **TO-252AA Case Outline** 

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E A<br>C2<br>b3<br>b b2 C<br>e<br>A1<br>e1<br>7 |<br>E1<br>L3<br>D<br>H<br>L4<br>L5 L<br>gage plane height (0.5 mm)<br>D1<br>**----- End of picture text -----**<br>


||**MILLIMETERS**|**MILLIMETERS**|**INCHES**|**INCHES**|
|---|---|---|---|---|
|**DIM.**|**MIN.**|**MAX.**|**MIN.**|**MAX.**|
|A|2.18|2.38|0.086|0.094|
|A1|-|0.127|-|0.005|
|b|0.64|0.88|0.025|0.035|
|b2|0.76|1.14|0.030|0.045|
|b3|4.95|5.46|0.195|0.215|
|C|0.46|0.61|0.018|0.024|
|C2|0.46|0.89|0.018|0.035|
|D|5.97|6.22|0.235|0.245|
|D1|4.10|-|0.161|-|
|E|6.35|6.73|0.250|0.265|
|E1|4.32|-|0.170|-|
|H|9.40|10.41|0.370|0.410|
|e|2.28 BSC||0.090 BSC||
|e1<br>~~——~~|4.56 BSC<br>||0.180 BSC<br>||
|L<br>~~——~~|1.40<br>|1.78<br>|0.055<br>|0.070<br>|
|L3<br>~~——~~|0.89<br>|1.27<br>|0.035<br>|0.050<br>|
|L4<br>~~——=SSS=~~|-<br>~~=SSS=~~|1.02<br>~~=SSS=~~|-<br>~~=SSS=~~|0.040<br>~~=SSS=~~|
|L5<br>~~=SSS=~~|1.01<br>~~=SSS=~~|1.52<br>~~=SSS=~~|0.040<br>~~=SSS=~~|0.060<br>~~=SSS=~~|
|ECN: T13-0359-Rev. O, 03-Jun-13<br>DWG: 5347<br>~~=SSS=~~|||||



- Xi’an, Mingxin, and GEM SH actual photo. 

Revision: 03-Jun-13 

Document Number: 71197 

**1** For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**Package Information** 

**==> picture [60 x 50] intentionally omitted <==**

## Vishay Siliconix 

## **TO-251AA (HIGH VOLTAGE)** 

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**----- Start of picture text -----**<br>
4 3 A<br>E1 Thermal PAD E A<br>4<br>b4 0.010 0.25 M C A B c2<br>L2 4 A<br>θ2 θ1<br>D1 4<br>B<br>C<br>3<br>Seating<br>5 plane<br>L1 L3 C C<br>(Datum A)<br>L<br>B B<br>A<br>A1<br>3  x b2<br>c<br>3 x b<br>View A - A 2 x e 0.010 0.25 M C A B<br>Base<br>5 metal<br>Plating<br>b1, b3<br>Lead tip<br>(c) c1 5<br>( b, b2)<br>Section B - B and C - C<br>D<br>**----- End of picture text -----**<br>


||**MILLIMETERS**|**MILLIMETERS**|**INCHES**|**INCHES**||**MILLIMETERS**<br>**INCHES**<br>**DIM.**<br>**MIN.**<br>**MAX.**<br>**MIN.**<br>**MAX.**<br>D1<br>5.21<br>-<br>0.205<br>-<br>E<br>6.35<br>6.73<br>0.250<br>0.265<br>E1<br>4.32<br>-<br>0.170<br>-<br>e<br>2.29 BSC<br>2.29 BSC<br>L<br>8.89<br>9.65<br>0.350<br>0.380<br>L1<br>1.91<br>2.29<br>0.075<br>0.090<br>L2<br>0.89<br>1.27<br>0.035<br>0.050<br>L3<br>1.14<br>1.52<br>0.045<br>0.060<br>θ1<br>0'<br>15'<br>0'<br>15'<br>θ2<br>25'<br>35'<br>25'<br>35'|**MILLIMETERS**|**MILLIMETERS**|**INCHES**|**INCHES**|
|---|---|---|---|---|---|---|---|---|---|---|
|**DIM.**|**MIN.**|**MAX.**|**MIN.**|**MAX.**|||**MIN.**|**MAX.**|**MIN.**|**MAX.**|
|A|2.18|2.39|0.086|0.094|||5.21|-|0.205|-|
|A1|0.89|1.14|0.035|0.045|||6.35|6.73|0.250|0.265|
|b|0.64|0.89|0.025|0.035|||4.32|-|0.170|-|
|b1|0.65|0.79|0.026|0.031|||2.29 BSC||2.29 BSC||
|b2|0.76|1.14|0.030|0.045|||8.89|9.65|0.350|0.380|
|b3|0.76|1.04|0.030|0.041|||1.91|2.29|0.075|0.090|
|b4|4.95|5.46|0.195|0.215|||0.89|1.27|0.035|0.050|
|c|0.46|0.61|0.018|0.024|||1.14|1.52|0.045|0.060|
|c1|0.41|0.56|0.016|0.022|||0'|15'|0'|15'|
|c2|0.46|0.86|0.018|0.034|||25'|35'|25'|35'|
|D|5.97|6.22|0.235|0.245|||||||
|ECN: S-82111-Rev. A, 15-Sep-08<br>DWG: 5968|||||||||||



ECN: S-82111-Rev. A, 15-Sep-08 DWG: 5968 

## **Notes** 

1. Dimensioning and tolerancing per ASME Y14.5M-1994. 

2. Dimension are shown in inches and millimeters. 

3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.13 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body. 

4. Thermal pad contour optional with dimensions b4, L2, E1 and D1. 

5. Lead dimension uncontrolled in L3. 

6. Dimension b1, b3 and c1 apply to base metal only. 

7. Outline conforms to JEDEC outline TO-251AA. 

Document Number: 91362 Revision: 15-Sep-08 

www.vishay.com 1 

**Application Note 826** 

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## Vishay Siliconix 

## **RECOMMENDED MINIMUM PADS FOR DPAK (TO-252)** 

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**----- Start of picture text -----**<br>
0.224<br>(5.690)<br>0.180 0.055<br>(4.572) (1.397)<br>0.243 (6.180)<br>0.420<br>(10.668)<br>0.087 (2.202)<br>0.090 (2.286)<br>**----- End of picture text -----**<br>


Recommended Minimum Pads Dimensions in Inches/(mm) 

> Return to Index Return to Index 

Document Number: 72594 Revision: 21-Jan-08 

www.vishay.com 

3 

**Legal Disclaimer Notice** Vishay 

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**==> picture [59 x 48] intentionally omitted <==**

## **Disclaimer** 

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 

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Revision: 02-Oct-12 

Document Number: 91000 

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