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IRFP460APBF
Power MOSFET, N Channel, 500 V, 20 A, 0.27 ohm, TO-247AC, Through Hole
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- Manufacturer: VISHAY
- Product type: Single MOSFETs
- Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:500V; On Resistance Rds(on):0.27ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power
- MSL: -
- SVHC: Lead (21-Jan-2025)
- No. of Pins: 3Pins
- Channel Type: N Channel
- Product Range: -
- Qualification: -
- Power Dissipation: 280W
- Transistor Mounting: Through Hole
- Rds(on) Test Voltage: 10V
- Transistor Case Style: TO-247AC
- Drain Source Voltage Vds: 500V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 20A
- Drain Source On State Resistance: 0.27ohm
- Gate Source Threshold Voltage Max: 4V
| Delivery and price | |
|---|---|
| Units per pack | 250 |
| Price | 3.52 € |
| Current stock | 200+ |
| Lead time | 30 days |
Datasheet
**IRFP460A** ## www.vishay.com ## Vishay Siliconix ## **Power MOSFET** **==> picture [78 x 91] intentionally omitted <==** **----- Start of picture text -----**<br> TO-247<br>eo S<br>D<br>G<br>**----- End of picture text -----**<br> **==> picture [6 x 6] intentionally omitted <==** **----- Start of picture text -----**<br> D<br>**----- End of picture text -----**<br> ## **FEATURES** - Low gate charge Qg results in simple drive requirement - Improved gate, avalanche and dynamic dV/dt Available ruggedness - • Fully characterized capacitance and avalanche voltage and current - Effective Coss specified - Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 **Note** |**PRODUCT SUMMARY**|**PRODUCT SUMMARY**|**PRODUCT SUMMARY**| |---|---|---| |VDS(V)|500|| |RDS(on)(Ω)|VGS= 10 V|0.27| |Qg(max.) (nC)|105|| |Qgs(nC)|26|| |Qgd(nC)|42|| |Configuration|Single|| - This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details ## **APPLICATIONS** - Switch mode power supply (SMPS) - Uninterruptable power supply - High speed power switching ## **TYPICAL SMPS TOPOLOGIES** - Full bridge - PFC boost ## **ORDERING INFORMATION** Package TO-247 Lead (Pb)-free IRFP460APbF |**ABSOLUTE MAXIMUM RATINGS**TC = 25 °C,unless otherwise noted<br>~~re~~|**ABSOLUTE MAXIMUM RATINGS**TC = 25 °C,unless otherwise noted<br>~~re~~|**ABSOLUTE MAXIMUM RATINGS**TC = 25 °C,unless otherwise noted<br>~~re~~|**ABSOLUTE MAXIMUM RATINGS**TC = 25 °C,unless otherwise noted<br>~~re~~|**ABSOLUTE MAXIMUM RATINGS**TC = 25 °C,unless otherwise noted<br>~~re~~|**ABSOLUTE MAXIMUM RATINGS**TC = 25 °C,unless otherwise noted<br>~~re~~| |---|---|---|---|---|---| |**PARAMETER**<br>~~re~~|||**SYMBOL**<br>~~re~~|**LIMIT**<br>~~re~~|**UNIT**<br>~~re~~| |Drain-source voltage<br>~~re~~<br>~~ee~~<br>~~es ee~~|||VDS<br>~~re~~<br>~~ee~~<br>~~ee~~|500<br>~~re~~<br>~~ee~~|V<br>~~re~~<br>~~ee~~| |Gate-source voltage<br>~~re~~<br>~~ee~~<br>~~es ee~~|||VGS<br>~~re~~<br>~~ee~~<br>~~ee~~|± 30<br>~~re~~<br>~~ee~~|| |Continuous drain current<br>~~ee~~<br>~~es ee~~|VGSat 10 V<br>~~ee~~<br>~~ee~~|TC= 25 °C<br>~~ee~~<br>~~ee~~|ID<br>~~ee~~<br>~~ee~~|20<br>~~ee~~|A<br>~~ee~~<br>~~ee~~| |||TC= 100 °C<br>~~ee~~||13|| |Pulsed drain currenta<br>~~es ee~~<br>~~ee~~|||IDM<br>~~ee~~<br>~~ee~~|80<br>~~ee~~|| |Linear deratingfactor<br>~~es ee~~<br>~~ee~~|||~~ee~~<br>~~ee~~|2.2<br>~~ee~~|W/°C<br>~~ee~~| |Single pulse avalanche energyb<br>~~ee~~<br>~~——~~|||EAS<br>~~ee~~<br>|960<br>~~ee~~<br>|mJ<br>~~ee~~<br>| |Repetitive avalanche currenta<br>~~——~~|||IAR<br>|20<br>|A<br>| |Repetitive avalanche energya<br>~~——~~|||EAR<br>|28<br>|mJ<br>| |Maximum power dissipation<br>~~——~~|TC= 25 °C<br>||PD<br>|280<br>|W<br>| |Peak diode recoverydV/dtc<br>~~——er~~|||dV/dt<br>~~er~~|3.8<br>~~er~~|V/ns<br>~~er~~| |Operating junction and storage temperature range<br>~~er~~|||TJ, Tstg<br>~~er~~|-55 to +150<br>~~er~~<br>~~==~~|°C<br>~~er~~<br>~~=~~| |Solderingrecommendations (peak temperature)<br>~~er~~|for 10 s<br>~~er~~||~~er~~|300d<br>~~er~~<br>~~==~~|| |Mounting torque<br>~~er~~<br>~~DF~~|6-32 or M3 screw<br>~~er~~<br>~~DF~~||~~er~~<br>~~DF~~|10<br>~~er~~<br>~~DF~~<br>~~==~~|lbf · in<br>~~er~~<br>~~DF~~<br>~~=~~| |||||1.1<br>~~DF~~<br>~~==~~|N · m<br>~~DF~~<br>~~=~~| - b. Starting TJ = 25 °C, L = 4.3 mH, Rg = 25 Ω, IAS = 20 A (see fig. 12) - c. ISD ≤ 20 A, dI/dt ≤ 125 A/μs, VDD ≤ VDS, TJ ≤ 150 °C d. 1.6 mm from case S22-0058-Rev. C, 31-Jan-2022 G S N-Channel MOSFET Document Number: 91234 **1** For technical questions, contact: hvmos.techsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **IRFP460A** www.vishay.com Vishay Siliconix |**THERMAL RESISTANCE RATINGS**|**THERMAL RESISTANCE RATINGS**|**THERMAL RESISTANCE RATINGS**|**THERMAL RESISTANCE RATINGS**|**THERMAL RESISTANCE RATINGS**| |---|---|---|---|---| |**PARAMETER**|**SYMBOL**|**TYP.**|**MAX.**|**UNIT**| |Maximum junction-to-ambient|RthJA|-|40|°C/W| |Case-to-sink, flat, greased surface|RthCS|0.24|-|| |Maximum junction-to-case (drain)|RthJC|-|0.45|| |**SPECIFICATIONS**TJ = 25 °C,unless otherwise noted|**SPECIFICATIONS**TJ = 25 °C,unless otherwise noted|**SPECIFICATIONS**TJ = 25 °C,unless otherwise noted|**SPECIFICATIONS**TJ = 25 °C,unless otherwise noted||||| |---|---|---|---|---|---|---|---| |**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**||**MIN.**|**TYP.**|**MAX.**|**UNIT**| |**Static**|||||||| |Drain-source breakdown voltage|VDS|VGS= 0 V, ID= 250 μA||500|-|-|V| |VDStemperature coefficient|ΔVDS/TJ|Reference to 25 °C, ID= 1 mA||-|0.61|-|V/°C| |Gate-source threshold voltage|VGS(th)|VDS= VGS, ID= 250 μA||2.0|-|4.0|V| |Gate-source leakage|IGSS|VGS= ± 30 V||-|-|± 100|nA| |Zero gate voltage drain current|IDSS|VDS= 500 V, VGS= 0 V||-|-|25|µA| |||VDS= 400 V, VGS= 0 V, TJ= 125 °C||-|-|250|| |Drain-source on-state resistance|RDS(on)|VGS= 10 V|ID= 12 Ab|-|-|0.27|Ω| |Forward transconductance|gfs|VDS= 50 V, ID= 12 Ab||11|-|-|S| |**Dynamic**|||||||| |Input capacitance|Ciss|VGS= 0 V,<br>VDS= 25 V,<br>f = 1.0 MHz, s|ee fig. 5|-|3100|-|pF| |Output capacitance|Coss|||-|480|-|| |Reverse transfer capacitance|Crss|||-|18|-|| |Output capacitance|Coss|VGS= 0 V|VDS= 1.0 V, f = 1.0 MHz||4430||| ||||VDS= 400 V, f = 1.0 MHz||130||| |Effective output capacitance|Cosseff.||VDS= 0 V to 400 Vc||140||| |Total gate charge|Qg|VGS= 10 V|ID= 20 A, VDS= 400 V,<br>see fig. 6 and 13b|-|-|105|nC| |Gate-source charge|Qgs|||-|-|26|| |Gate-drain charge|Qgd|||-|-|42|| |Turn-on delay time|td(on)|VDD= 250 V, ID= 20 A,<br>RG= 4.3Ω, RD= 13Ω, see fig. 10b||-|18|-|ns| |Rise time|tr|||-|55|-|| |Turn-off delay time|td(off)|||-|45|-|| |Fall time|tf|||-|39|-|| |**Drain-Source Body Diode Characteristics**|||||||| |Continuous source-drain diode current|IS|MOSFET symbol<br>showing the<br>integral reverse<br>p - n junction diode<br>S<br>D<br>G||-|-|20|A| |Pulsed diode forward currenta|ISM|||-|-|80|| |Body diode voltage|VSD|TJ= 25 °C, IS= 20A, VGS= 0 Vb||-|-|1.8|V| |Body diode reverse recovery time|trr|TJ= 25 °C, IF= 20 A, dI/dt = 100 A/μsb||-|480|710|ns| |Body diode reverse recovery charge|Qrr|||-|5.0|7.5|μC| |Forward turn-on time|ton|Intrinsic turn-on time is negligible (turn-on is dominated by LSand LD)|||||| ## **Notes** a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) b. Pulse width ≤ 300 μs; duty cycle ≤ 2 % c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDS S22-0058-Rev. C, 31-Jan-2022 Document Number: 91234 **2** For technical questions, contact: hvmos.techsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **IRFP460A** Vishay Siliconix **==> picture [77 x 10] intentionally omitted <==** **----- Start of picture text -----**<br> www.vishay.com<br>**----- End of picture text -----**<br> ## **TYPICAL CHARACTERISTICS** 25 °C, unless otherwise noted **==> picture [202 x 165] intentionally omitted <==** **----- Start of picture text -----**<br> 10 [2]<br>VGS<br>Top 15 V<br> 10 V<br>8.0 V<br>7.0 V<br>10 6.0 V<br>5.5 V<br>5.0 V<br>Bottom 4.5 V<br>1<br>4.5 V<br>20 µs Pulse Width<br>TC = 25 °C<br>0.1<br>0.1 1 10 10 [2]<br>91234_01 VDS, Drain-to-Source Voltage (V)<br>, Drain-to-Source Current (A)<br>ID<br>**----- End of picture text -----**<br> **Fig. 1 - Typical Output Characteristics** **==> picture [203 x 165] intentionally omitted <==** **----- Start of picture text -----**<br> 3.0<br>ID = 20 A<br>VGS = 10 V<br>2.5<br>2.0<br>1.5<br>1.0<br>0.5<br>0.0<br>- 60 - 40 - 20 0 20 40 60 80 100 120 140 160<br>91234_04 TJ, Junction Temperature (°C)<br>(Normalized)<br>, Drain-to-Source On Resistance<br>DS(on)<br>R<br>**----- End of picture text -----**<br> **Fig. 4 - Normalized On-Resistance vs. Temperature** **==> picture [201 x 165] intentionally omitted <==** **----- Start of picture text -----**<br> 10 [2]<br>VGS<br>Top 15 V<br> 10 V<br>8.0 V<br>7.0 V<br>6.0 V<br>5.5 V<br>5.0 V<br>Bottom 4.5 V<br>10<br>4.5 V<br>20 µs Pulse Width<br>1 TC = 150 °C<br>1 10 10 [2]<br>91234_02 VDS, Drain-to-Source Voltage (V)<br>, Drain-to-Source Current (A)<br>ID<br>**----- End of picture text -----**<br> **Fig. 2 - Typical Output Characteristics** **==> picture [202 x 165] intentionally omitted <==** **----- Start of picture text -----**<br> 10 [2]<br>150 °C<br>10<br>25 °C<br>1<br>20 µs Pulse Width<br>VDS = 50 V<br>0.1<br>4.0 5.0 6.0 7.0 8.0 9.0<br>91234_03 VGS, Gate-to-Source Voltage (V)<br>, Drain-to-Source Current (A)<br>ID<br>**----- End of picture text -----**<br> **Fig. 3 - Typical Transfer Characteristics** **==> picture [203 x 359] intentionally omitted <==** **----- Start of picture text -----**<br> 10 [5]<br>VGS = 0 V, f = 1 MHz<br>C iss = C gs + C gd , C ds Shorted<br>10 [4] Crss = Cgd<br>Coss = Cds + Cgd<br>10 [3] Ciss<br>10 [2]<br>Coss<br>10<br>C rss<br>1<br>1 10 10 [2] 10 [3]<br>91234_05 VDS, Drain-to-Source Voltage (V)<br> Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage<br>20<br>ID = 20 A<br>VDS = 400 V<br>16<br>VDS = 250 V<br>12 V DS = 100 V<br>8<br>4<br>For test circuit<br>see figure 13<br>0<br>0 20 40 60 80 100<br>91234_06 QG, Total Gate Charge (nC)<br>Capacitance (pF)<br>, Gate-to-Source Voltage (V)<br>GS<br>V<br>**----- End of picture text -----**<br> **Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage** **Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage** S22-0058-Rev. C, 31-Jan-2022 Document Number: 91234 **3** For technical questions, contact: hvmos.techsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **IRFP460A** www.vishay.com Vishay Siliconix **==> picture [203 x 165] intentionally omitted <==** **----- Start of picture text -----**<br> 10 [2]<br>150 °C<br>10 25 °C<br>1<br>VGS = 0 V<br>0.1<br>0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6<br>91234_07 VSD, Source-to-Drain Voltage (V)<br>, Reverse Drain Current (A)<br>ISD<br>**----- End of picture text -----**<br> **Fig. 7 - Typical Source-Drain Diode Forward Voltage** **==> picture [203 x 164] intentionally omitted <==** **----- Start of picture text -----**<br> 20<br>15<br>10<br>5<br>0<br>25 50 75 100 125 150<br>91234_09 TC, Case Temperature (°C)<br>, Drain Current (A)<br>ID<br>**----- End of picture text -----**<br> **Fig. 9 - Maximum Drain Current vs. Case Temperature** **==> picture [203 x 163] intentionally omitted <==** **----- Start of picture text -----**<br> 10 [3]<br>Operation in this area limited<br>by RDS(on)<br>10 [2]<br>10 µs<br>100 µs<br>10<br>1 ms<br>T C = 25 ° C<br>T J = 150 ° C 10 ms<br>Single Pulse<br>1<br>10 10 [2] 10 [3] 10 [4]<br>91234_08 VDS, Drain-to-Source Voltage (V)<br>, Drain Current (A)<br>ID<br>**----- End of picture text -----**<br> **Fig. 8 - Maximum Safe Operating Area** **==> picture [151 x 219] intentionally omitted <==** **----- Start of picture text -----**<br> RD<br>VDS<br>VGS<br>D.U.T.<br>RG +- VDD<br>10 V<br>Pulse width ≤ 1 µs<br>Duty factor ≤ 0.1 %<br> Fig. 10 - Switching Time Test Circuit<br>VDS<br>90 %<br>10 %<br>VGS<br>td(on) tr td(off) tf<br>**----- End of picture text -----**<br> **Fig. 11 - Switching Time Waveforms** **==> picture [405 x 163] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>D = 0.5<br>0.1 0.2<br>0.1<br>0.05 PDM<br>0.02<br>10 [-2] 0.01 Single Pulse t1<br>(Thermal Response) t2<br>Notes:<br>1. Duty Factor, D = t1/t2<br>2. Peak Tj = PDM x ZthJC + TC<br>10 [-3]<br>10 [-5] 10 [-4] 10 [-3] 10 [-2] 0.1 1<br>91234_11 t1, Rectangular Pulse Duration (S)<br>)thJC<br>Thermal Response (Z<br>**----- End of picture text -----**<br> **Fig. 12 - Maximum Effective Transient Thermal Impedance, Junction-to-Case** S22-0058-Rev. C, 31-Jan-2022 Document Number: 91234 **4** For technical questions, contact: hvmos.techsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **IRFP460A** Vishay Siliconix www.vishay.com **==> picture [156 x 107] intentionally omitted <==** **----- Start of picture text -----**<br> 15 V<br>L Driver<br>VDS<br>RG D.U.T. +<br>- [V][DD] A<br>IAS<br>20 V<br>tp 0.01 Ω<br>**----- End of picture text -----**<br> **Fig. 13 - Unclamped Inductive Test Circuit** **==> picture [203 x 321] intentionally omitted <==** **----- Start of picture text -----**<br> VDS<br>t<br>p<br>IAS<br> Fig. 14 - Unclamped Inductive Waveforms<br>2400<br>I D<br>Top 8.9 A<br>2000 13 A<br>Bottom 20 A<br>1600<br>1200<br>800<br>400<br>0<br>25 50 75 100 125 150<br>91234_12c Starting TJ, Junction Temperature (°C)<br>, Single Pulse Avalanche Energy (mJ)<br>AS<br>E<br>**----- End of picture text -----**<br> **Fig. 15 - Maximum Avalanche Energy vs. Drain Current** **==> picture [201 x 308] intentionally omitted <==** **----- Start of picture text -----**<br> QG<br>10 V<br>QGS QGD<br>VG<br>Charge<br> Fig. 16 - Basic Gate Charge Waveform<br>620<br>600<br>580<br>560<br>540<br>0 4 8 12 16 20<br>91234_12d IAV, Avalanche Current (A)<br>, Avalanche Voltage (V)<br>DSav<br>V<br>**----- End of picture text -----**<br> **Fig. 17 - Typical Drain-to-Source Voltage vs. Avalanche Current** **==> picture [145 x 147] intentionally omitted <==** **----- Start of picture text -----**<br> Current regulator<br>Same type as D.U.T.<br>50 kΩ<br>12 V 0.2 µF<br>0.3 µF<br>+<br>D.U.T. - VDS<br>VGS<br>3 mA<br>IG ID<br>Current sampling resistors<br>**----- End of picture text -----**<br> **Fig. 18 - Gate Charge Test Circuit** S22-0058-Rev. C, 31-Jan-2022 Document Number: 91234 **5** For technical questions, contact: hvmos.techsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **IRFP460A** Vishay Siliconix **==> picture [77 x 10] intentionally omitted <==** **----- Start of picture text -----**<br> www.vishay.com<br>**----- End of picture text -----**<br> **==> picture [283 x 491] intentionally omitted <==** **----- Start of picture text -----**<br> Peak Diode Recovery dV/dt Test Circuit<br>+ Circuit layout considerations<br>D.U.T.<br>• Low stray inductance<br>• Ground plane<br>• Low leakage inductance<br>current transformer<br>-<br>+<br>- - +<br>Rg • dV/dt controlled by Rg +<br>•• Driver same type as D.U.T.ISD controlled by duty factor “D” - VDD<br>• D.U.T. - device under test<br>Driver gate drive<br>P.W.<br>Period D =<br>P.W. Period<br>VGS = 10 V [a]<br>D.U.T. lSD waveform<br>Reverse<br>recovery Body diode forward<br>current current dI/dt<br>D.U.T. VDS waveform Diode recovery<br>dV/dt<br>VDD<br>Re-applied<br>voltage<br>Body diode forward drop<br>Inductor current<br>Ripple ≤ 5 % ISD<br>Note<br>a. VGS = 5 V for logic level devices<br>**----- End of picture text -----**<br> **Fig. 19 - For N-Channel** _Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91234._ Document Number: 91234 S22-0058-Rev. C, 31-Jan-2022 **6** For technical questions, contact: hvmos.techsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **Package Information** Vishay Siliconix www.vishay.com ## **TO-247AC (High Voltage)** ## **VERSION 1: FACILITY CODE = 9** ||**MILLIMETERS**|**MILLIMETERS**||||**MILLIMETERS**|**MILLIMETERS**|| |---|---|---|---|---|---|---|---|---| |**DIM.**|**MIN.**|**MAX.**|**NOTES**||**DIM.**|**MIN.**|**MAX.**|**NOTES**| |A|4.83|5.21|||D1|16.25|16.85|5| |A1|2.29|2.55|||D2|0.56|0.76|| |A2|1.50|2.49|||E|15.50|15.87|4| |b|1.12|1.33|||E1|13.46|14.16|5| |b1|1.12|1.28|||E2|4.52|5.49|3| |b2|1.91|2.39|6||e|5.44 BSC||| |b3|1.91|2.34|||L|14.90|15.40|| |b4|2.87|3.22|6, 8||L1|3.96|4.16|6| |b5|2.87|3.18|||Ø P|3.56|3.65|7| |c|0.55|0.69|6||Ø P1|7.19 ref.||| |c1|0.55|0.65|||Q|5.31|5.69|| |D|20.40|20.70|4||S|5.54|5.74|| ## **Notes** > (1) Package reference: JEDEC® TO247, variation AC - (2) All dimensions are in mm - (3) Slot required, notch may be rounded > (4) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm per side. These dimensions are measured at the outermost extremes of the plastic body > (5) Thermal pad contour optional with dimensions D1 and E1 > (6) Lead finish uncontrolled in L1 > (7) Ø P to have a maximum draft angle of 1.5° to the top of the part with a maximum hole diameter of 3.91 mm > (8) Dimension b2 and b4 does not include dambar protrusion. Allowable dambar protrusion shall be 0.1 mm total in excess of b2 and b4 dimension at maximum material condition Revision: 19-Oct-2020 Document Number: 91360 **1** For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **Package Information** **==> picture [77 x 10] intentionally omitted <==** **----- Start of picture text -----**<br> www.vishay.com<br>**----- End of picture text -----**<br> ## Vishay Siliconix ## **VERSION 2: FACILITY CODE = Y** **==> picture [430 x 278] intentionally omitted <==** **----- Start of picture text -----**<br> 4 A A<br>B E ØP7 (Datum B)<br>E/2 S A2 Ø k M D B M<br>3 R/2 ØP1<br>A<br>D2<br>Q<br>2 x R 4 4<br>(2) D D1<br>1 2 3 D 4<br>Thermal pad<br>5 L1<br>C L 4<br>E1<br>See view B A 0.01 M D B M<br>2 x b2 C View A - A<br>2 x e<br>3 x b<br>b4 A1<br>0.10 M C A M<br>Planting (b1, b3, b5) Base metal<br>Lead Assignments<br>1. Gate D D E E<br>2. Drain<br>3. Source C C (c) c1<br>4. Drain<br>(b, b2, b4)<br>(4)<br>Section C - C, D - D, E - E<br>View B<br>**----- End of picture text -----**<br> ||**MILLIMETERS**|**MILLIMETERS**| |---|---|---| |**DIM.**|**MIN.**|**MAX.**| |A|4.58|5.31| |A1|2.21|2.59| |A2|1.17|2.49| |b|0.99|1.40| |b1|0.99|1.35| |b2|1.53|2.39| |b3|1.65|2.37| |b4|2.42|3.43| |b5|2.59|3.38| |c|0.38|0.86| |c1|0.38|0.76| |D|19.71|20.82| |D1|13.08|-| ||**MILLIMETERS**|**MILLIMETERS**|| |---|---|---|---| |**DIM.**|**MIN.**|**MAX.**|**NOTES**| |D2|0.51|1.30|| |E|15.29|15.87|| |E1|13.72|-|| |e|5.46 BSC||| |Ø k|0.254||| |L|14.20|16.25|| |L1|3.71|4.29|| |Ø P|3.51|3.66|| |Ø P1|-|7.39|| |Q|5.31|5.69|| |R|4.52|5.49|| |S|5.51 BSC||| ||||| ## **Notes** > (1) Dimensioning and tolerancing per ASME Y14.5M-1994 - (2) Contour of slot optional > (3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body > (4) Thermal pad contour optional with dimensions D1 and E1 - (5) Lead finish uncontrolled in L1 > (6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") - (7) Outline conforms to JEDEC outline TO-247 with exception of dimension c Revision: 19-Oct-2020 Document Number: 91360 **2** For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **Package Information** Vishay Siliconix www.vishay.com ## **VERSION 3: FACILITY CODE = N** **==> picture [251 x 280] intentionally omitted <==** **----- Start of picture text -----**<br> A<br>B E A P1<br>R/2 P<br>N A2<br>D<br>C<br>C<br>b4 E1<br>b2b e A1 0.01 M D B M<br>0.10 M C A M<br>b1, b3, b5<br>Base metal<br>b, b2, b4<br>Plating<br>D2<br>Q S<br>M<br>R D B<br>D1<br>D M<br>K<br>L1<br>L<br>c c1<br>**----- End of picture text -----**<br> ||**MILLIMETERS**|**MILLIMETERS**|||**MILLIMETERS**|**MILLIMETERS**| |---|---|---|---|---|---|---| |**DIM.**|**MIN.**|**MAX.**||**DIM.**|**MIN.**|**MAX.**| |A|4.65|5.31||D2|0.51|1.35| |A1|2.21|2.59||E|15.29|15.87| |A2|1.17|1.37||E1|13.46|-| |b|0.99|1.40||e|5.46 BSC|| |b1|0.99|1.35||k|0.254|| |b2|1.65|2.39||L|14.20|16.10| |b3|1.65|2.34||L1|3.71|4.29| |b4|2.59|3.43||N|7.62 BSC|| |b5|2.59|3.38||P|3.56|3.66| |c|0.38|0.89||P1|-|7.39| |c1|0.38|0.84||Q|5.31|5.69| |D|19.71|20.70||R|4.52|5.49| |D1|13.08|-||S|5.51 BSC|| |ECN: E20-0545-Rev. F, 19-Oct-2020<br>DWG: 5971||||||| ECN: E20-0545-Rev. F, 19-Oct-2020 DWG: 5971 ## **Notes** > (1) Dimensioning and tolerancing per ASME Y14.5M-1994 - (2) Contour of slot optional > (3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body > (4) Thermal pad contour optional with dimensions D1 and E1 - (5) Lead finish uncontrolled in L1 > (6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") Revision: 19-Oct-2020 Document Number: 91360 **3** For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **Legal Disclaimer Notice** Vishay www.vishay.com ## **Disclaimer** ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer's technical experts. Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein. Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of any of the products, services or opinions of the corporation, organization or individual associated with the third-party website. Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website or for that of subsequent links. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. _**© 2022 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED**_ Revision: 01-Jan-2022 Document Number: 91000 **1**
Updated at April 29, 2026
Vishay is a global leader in the manufacturing of discrete semiconductors and passive electronic components. Renowned for its exceptional quality and engineering expertise, the company produces highly reliable solutions that drive innovation across the industrial, automotive, telecommunications, and consumer electronics markets. From advanced factory automation to vehicle electrification, Vishay components provide the foundational building blocks for modern electronic design. The company's expansive portfolio is heavily focused on efficient power management, signal routing, and energy storage. Within its passive component lineup, Vishay is recognized for its extensive array of high-performance capacitors, including robust aluminium electrolytic, film, and polymer variants, alongside highly efficient power inductors. In the realm of discrete semiconductors, Vishay is a premier manufacturer of single and dual MOSFETs, as well as a vast selection of Schottky, Zener, and fast-recovery rectifier diodes designed for demanding power applications. Furthermore, Vishay delivers industry-leading circuit protection and thermal management solutions. With a broad offering of transient voltage suppressors (TVS diodes) and temperature-sensing NTC thermistors, these components are engineered to safeguard sensitive circuitry against both electrical and thermal overstress. By combining this vital mix of advanced discretes and passives, Vishay enables engineers to develop robust, space-saving, and highly resilient electronic systems.
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