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IRFP21N60LPBF
Power MOSFET, N Channel, 600 V, 21 A, 0.32 ohm, TO-247AC, Through Hole
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- Manufacturer: VISHAY
- Product type: Single MOSFETs
- Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.32ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power
- MSL: -
- SVHC: No SVHC (17-Dec-2014)
- No. of Pins: 3Pins
- Channel Type: N Channel
- Product Range: -
- Qualification: -
- Power Dissipation: 330W
- Transistor Mounting: Through Hole
- Rds(on) Test Voltage: 10V
- Transistor Case Style: TO-247AC
- Drain Source Voltage Vds: 600V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 21A
- Drain Source On State Resistance: 0.32ohm
- Gate Source Threshold Voltage Max: 5V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 3.25 € |
| Current stock | 200+ |
| Lead time | 7 days |
Datasheet
**IRFP21N60L, SiHFP21N60L** Vishay Siliconix ## **Power MOSFET** ## **FEATURES** |**FEATURES**|**FEATURES**|**FEATURES**| |---|---|---| |**FEATURES**<br>• Superfast Body Diode Eliminates the Need for<br>External Diodes in ZVS Applications<br>• Lower Gate Charge Results in Simple Drive<br>Requirements<br>• Enhanced dV/dt Capabilities Offer Improved Ruggedness<br>• Higher Gate Voltage Threshold Offers Improved Noise<br>Immunity<br>• Compliant to RoHS Directive 2002/95/EC<br>**APPLICATIONS**<br>• Zero Voltage Switching SMPS<br>• Telecom and Server Power Supplies<br>• Uninterruptible Power Supplies<br>• Motor Control Applications<br>**PRODUCT SUMMARY**<br>VDS(V)<br>600<br>RDS(on)()<br>VGS= 10 V<br>0.27<br>Qg(Max.) (nC)<br>150<br>Qgs(nC)<br>46<br>Qgd(nC)<br>64<br>Configuration<br>Single<br>G<br>D<br>S<br>**TO-247AC**<br>G<br>D<br>S<br>Available<br>**RoHS***<br>**COMPLIANT**<br>~~S=~~<br>,<br>~~@ 8~~||| |N-Channel MOSFET||| |**ORDERING INFORMATION**<br>Package<br>TO-247AC<br>Lead (Pb)-free<br>IRFP21N60LPbF<br>SiHFP21N60L-E3<br>SnPb<br>IRFP21N60L<br>SiHFP21N60L<br>~~———~~||| |**ABSOLUTE MAXIMUM RATINGS**(TC= 25 °C,unless otherwise noted)||| |**PARAMETER**<br>**SYMBOL**<br>**LIMIT**||**UNIT**| |Drain-Source Voltage<br>VDS<br>600||V| |Gate-Source Voltage<br>VGS<br>± 30||| |Continuous Drain Current<br>VGSat 10 V<br>TC= 25 °C<br>ID<br>21<br>TC= 100 °C<br>13||A| |Pulsed Drain Currenta<br>IDM<br>84||| |Linear DeratingFactor<br>2.6||W/°C| |Single Pulse Avalanche Energyb<br>EAS<br>420||mJ| |Repetitive Avalanche Currenta<br>IAR<br>21||A| |Repetitive Avalanche Energya<br>EAR<br>33<br>mJ<br>Maximum Power Dissipation<br>TC= 25 °C<br>PD<br>330<br>W<br>Peak Diode RecoverydV/dtc<br>dV/dt<br>16<br>V/ns<br>OperatingJunction and Storage Temperature Range<br>TJ, Tstg<br>- 55 to + 150<br>°C<br>SolderingRecommendations(Peak Temperature)<br>for 10 s<br>300d<br>Mounting Torque<br>6-32 or M3 screw<br>10<br>lbf · in<br>1.1<br>N · m<br>~~———~~||| • Enhanced dV/dt Capabilities Offer Improved Ruggedness • Higher Gate Voltage Threshold Offers Improved Noise Immunity **Notes** a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). - b. Starting TJ = 25 °C, L = 1.9 mH, Rg = 25 , IAS = 21 A, dV/dt = 11 V/ns (see fig. 12a). - c. ISD 21 A, dI/dt 530 A/μs, VDD VDS, TJ 150 °C. - d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91206 S11-0446-Rev. C, 14-Mar-11 www.vishay.com 1 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **IRFP21N60L, SiHFP21N60L** ## Vishay Siliconix **==> picture [59 x 48] intentionally omitted <==** |**THERMAL RESISTANCE RATINGS**|**THERMAL RESISTANCE RATINGS**|**THERMAL RESISTANCE RATINGS**|**THERMAL RESISTANCE RATINGS**|**THERMAL RESISTANCE RATINGS**| |---|---|---|---|---| |**PARAMETER**|**SYMBOL**|**TYP.**|**MAX.**|**UNIT**| |Maximum Junction-to-Ambient|RthJA|-|40|°C/W| |Case-to-Sink, Flat, Greased Surface|RthCS|0.24|-|| |Maximum Junction-to-Case (Drain)|RthJC|-|0.38|| |**SPECIFICATIONS**(TJ= 25 °C, unless otherwise noted)|**SPECIFICATIONS**(TJ= 25 °C, unless otherwise noted)|**SPECIFICATIONS**(TJ= 25 °C, unless otherwise noted)|**SPECIFICATIONS**(TJ= 25 °C, unless otherwise noted)||||| |---|---|---|---|---|---|---|---| |**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**||**MIN.**|**TYP.**|**MAX.**|**UNIT**| |**Static**|||||||| |Drain-Source Breakdown Voltage|VDS|VGS= 0 V, ID= 250 μA||600|-|-|V| |VDSTemperature Coefficient|VDS/TJ|Reference to 25 °C, ID= 1 mA||-|420|-|mV/°C| |Gate-Source Threshold Voltage|VGS(th)|VDS= VGS, ID= 250 μA||3.0|-|5.0|V| |Gate-Source Leakage|IGSS|VGS= ± 30 V||-|-|± 100|nA| |Zero Gate Voltage Drain Current|IDSS|VDS= 600 V, VGS= 0 V||-|-|50|μA| |||VDS= 480 V, VGS= 0 V, TJ= 125 °C||-|-|2.0|mA| |Drain-Source On-State Resistance|RDS(on)|VGS= 10 V|ID= 13 Ab|-|0.27|0.32|| |Forward Transconductance|gfs|VDS= 50 V, ID= 13 A||11|-|-|S| |**Dynamic**|||||||| |Input Capacitance|Ciss|VGS= 0 V,<br>VDS= 25 V,<br>f = 1.0 MHz, see fig. 5||-|4000|-|pF| |Output Capacitance|Coss|||-|340|-|| |Reverse Transfer Capacitance|Crss|||-|29|-|| |Effective Output Capacitance|Cosseff.|VGS= 0 V,<br>VDS= 0 V to 480 Vc||-|170|-|| |Effective Output Capacitance<br>(Energy Related)|Cosseff. (ER)|||-|130|-|| |Total Gate Charge|Qg|VGS= 10 V|ID= 21 A, VDS= 480 V<br>see fig. 7 and 15b|-|-|150|nC| |Gate-Source Charge|Qgs|||-|-|46|| |Gate-Drain Charge|Qgd|||-|-|64|| |Gate Resistance|Rg|f = 1 MHz, open drain||-|0.63|-|| |Turn-On Delay Time|td(on)|VDD= 300 V, ID= 21 A,<br>Rg= 1.3, VGS= 10 V,<br>see fig. 11a and 11bb||-|20|-|ns| |Rise Time|tr|||-|58|-|| |Turn-Off Delay Time|td(off)|||-|33|-|| |Fall Time|tf|||-|10|-|| |**Drain-Source Body Diode Characteristics**|||||||| |Continuous Source-Drain Diode Current|IS|MOSFET symbol<br>showing the<br>integral reverse<br>p - n junction diode<br>S<br>D<br>G||-|-|21|A| |Pulsed Diode Forward Currenta|ISM|||-|-|84|| |Body Diode Voltage|VSD|TJ= 25 °C, IS= 21 A, VGS= 0 Vb||-|-|1.5|V| |Body Diode Reverse Recovery Time|trr|TJ= 25 °C, IF= 21 A||-|160|240|ns| |||TJ= 125 °C, dI/dt = 100 A/μsb||-|400|610|| |Body Diode Reverse Recovery Charge|Qrr|TJ= 25 °C, IF= 21 A, VGS= 0 Vb||-|480|730|nC| |||TJ= 125 °C, dI/dt = 100 A/μsb||-|1540|2310|| |Reverse Recovery Time|IRRM|TJ= 25 °C||-|5.3|7.9|A| |Forward Turn-On Time|ton|Intrinsic turn-on time is negligible(turn-on is dominated byLSand LD)|||||| ## **Notes** a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 μs; duty cycle 2 %. c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising form 0 % to 80 % VDS. Coss eff. (ER) is a fixed capacitance that stores the same energy as Coss while VDS is rising from 0 % to 80 % VDS. www.vishay.com 2 Document Number: 91206 S11-0446-Rev. C, 14-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **IRFP21N60L, SiHFP21N60L** Vishay Siliconix **==> picture [59 x 48] intentionally omitted <==** ## **TYPICAL CHARACTERISTICS** (25 °C, unless otherwise noted) **==> picture [201 x 435] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>VGS<br>TOP 15V<br>12V<br>100 10V<br>8.0V<br>7.0V<br>6.5V<br>10 6.0V<br>BOTTOM 5.5V<br>1<br>0.1<br>5.5V<br>0.01<br>20µs PULSE WIDTH<br>Tj = 25°C<br>0.001<br>0.1 1 10 100 1000<br>VDS, Drain-to-Source Voltage (V)<br>Fig. 1 - Typical Output Characteristics<br>100<br>VGS<br>TOP 15V<br>12V<br>10V<br>8.0V<br>10 7.0V<br>6.5V<br>6.0V<br>BOTTOM 5.5V<br>5.5V<br>1<br>0.1<br>20µs PULSE WIDTH<br>Tj = 150°C<br>0.01<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br> **Fig. 2 - Typical Output Characteristics** **==> picture [198 x 193] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>100<br>TJ = 150°C<br>10<br>1<br>TJ = 25°C<br>0.1<br>VDS = 50V<br>20µs PULSE WIDTH<br>0.01<br>4 6 8 10 12 14 16<br>VGS, Gate-to-Source Voltage (V)<br>)<br>(Α<br>ID, Drain-to-Source Current<br>**----- End of picture text -----**<br> **Fig. 3 - Typical Transfer Characteristics** **==> picture [204 x 193] intentionally omitted <==** **----- Start of picture text -----**<br> 3.0<br>I D = 21A<br>2.5 V GS = 10V<br>2.0<br>1.5<br>1.0<br>0.5<br>0.0<br>-60 -40 -20 0 20 40 60 80 100 120 140 160<br>TJ , Junction Temperature (°C)<br>(Normalized)<br>, Drain-to-Source On Resistance<br>RDS(on)<br>**----- End of picture text -----**<br> **Fig. 4 - Normalized On-Resistance vs. Temperature** Document Number: 91206 S11-0446-Rev. C, 14-Mar-11 www.vishay.com 3 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **IRFP21N60L, SiHFP21N60L** ## Vishay Siliconix **==> picture [198 x 465] intentionally omitted <==** **----- Start of picture text -----**<br> 100000<br>VGS = 0V, f = 1 MHZ<br>Ciss = Cgs + Cgd, Cds SHORTED<br>C rss = C gd<br>10000 C oss = C ds + C gd<br>Ciss<br>1000<br>Coss<br>100 Crss<br>10<br>1 10 100 1000<br>VDS, Drain-to-Source Voltage (V)<br>Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage<br>25<br>20<br>15<br>10<br>5<br>0<br>0 100 200 300 400 500 600 700<br>VDS, Drain-to-Source Voltage (V)<br>C, Capacitance(pF)<br>Energy (µJ)<br>**----- End of picture text -----**<br> **Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage** **Fig. 6 - Typical Output Capacitance Stored Energy vs. VDS** **==> picture [59 x 48] intentionally omitted <==** **==> picture [205 x 193] intentionally omitted <==** **----- Start of picture text -----**<br> 12.0<br>ID= 21A VDS= 480V<br>10.0 V DS = 300V<br>VDS= 120V<br>8.0<br>6.0<br>4.0<br>2.0<br>0.0<br>0 20 40 60 80 100 120<br> QG Total Gate Charge (nC)<br>VGS, Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br> **Fig. 7 - Typical Gate Charge vs. Gate-to-Source Voltage** **==> picture [203 x 194] intentionally omitted <==** **----- Start of picture text -----**<br> 100.00<br>T J = 150°C<br>10.00<br>TJ = 25°C<br>1.00<br>VGS = 0V<br>0.10<br>0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6<br>VSD, Source-to-Drain Voltage (V)<br>ISD, Reverse Drain Current (A)<br>**----- End of picture text -----**<br> **Fig. 8 - Typical Source-Drain Diode Forward Voltage** www.vishay.com 4 Document Number: 91206 S11-0446-Rev. C, 14-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **IRFP21N60L, SiHFP21N60L** **==> picture [59 x 48] intentionally omitted <==** ## Vishay Siliconix **==> picture [210 x 414] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)<br>100<br>10<br>100µsec<br>1msec<br>1<br>Tc = 25°C<br>Tj = 150°C 10msec<br>Single Pulse<br>0.1<br>1 10 100 1000 10000<br>VDS, Drain-to-Source Voltage (V)<br>Fig. 9 - Maximum Safe Operating Area<br>25<br>20<br>15<br>10<br>5<br>0<br>25 50 75 100 125 150<br> TC , Case Temperature (°C)<br>Drain-to-Source Current (A)<br>ID,<br>Drain Current (A)<br>ID,<br>**----- End of picture text -----**<br> **==> picture [151 x 291] intentionally omitted <==** **----- Start of picture text -----**<br> RD<br>VDS<br>VGS<br>D.U.T.<br>RG +- VDD<br>10 V<br>Pulse width ≤ 1 µs<br>Duty factor ≤ 0.1 %<br>Fig. 11a - Switching Time Test Circuit<br>VDS<br>90 %<br>10 %<br>VGS<br>td(on) tr td(off) tf<br>**----- End of picture text -----**<br> **Fig. 11b - Switching Time Waveforms** **Fig. 10 - Maximum Drain Current vs. Case Temperature** **==> picture [486 x 187] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>D = 0.50<br>0.1 0.20<br>0.10<br>0.05<br>0.01 0.02<br>0.01<br>P DM<br>t 1<br>0.001<br>SINGLE PULSE t 2<br>Notes:<br>( THERMAL RESPONSE ) 1. Duty factor D = t / t1 2<br>2. Peak T J = P DM x Z thJC + T C<br>0.0001<br>1E-006 1E-005 0.0001 0.001 0.01 0.1 1<br>t1 , Rectangular Pulse Duration (sec)<br>)<br>thJC<br>Thermal Response ( Z<br>**----- End of picture text -----**<br> **Fig. 12 - Maximum Effective Transient Thermal Impedance, Junction-to-Case** Document Number: 91206 S11-0446-Rev. C, 14-Mar-11 www.vishay.com 5 This datasheet is subject to change without notice. > THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **IRFP21N60L, SiHFP21N60L** Vishay Siliconix **==> picture [59 x 48] intentionally omitted <==** **==> picture [214 x 199] intentionally omitted <==** **----- Start of picture text -----**<br> 5.0<br>4.0<br>ID = 250µA<br>3.0<br>2.0<br>1.0<br>-75 -50 -25 0 25 50 75 100 125 150<br>TJ , Temperature ( °C )<br>Gate threshold Voltage (V)<br>VGS(th)<br>**----- End of picture text -----**<br> **Fig. 13 - Threshold Voltage vs. Temperature** **==> picture [200 x 368] intentionally omitted <==** **----- Start of picture text -----**<br> 800<br>ID<br>700 TOP 9.4A<br>13A<br>600 BOTTOM 21A<br>500<br>400<br>300<br>200<br>100<br>0<br>25 50 75 100 125 150<br>Starting TJ , Junction Temperature (°C)<br>Fig. 14a - Maximum Avalanche Energy vs. Drain Current<br>15 V<br>VDS L Driver<br> RG D.U.T +<br>- [V][DD] A<br>IAS A<br>20 V<br>tp 0.01 Ω<br>EAS , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br> **Fig. 14a - Maximum Avalanche Energy vs. Drain Current** **==> picture [151 x 452] intentionally omitted <==** **----- Start of picture text -----**<br> VDS<br>t<br>p<br>IAS<br>Fig. 14c - Unclamped Inductive Waveforms<br>Current regulator<br>Same type as D.U.T.<br>50 kΩΩ<br>12 V 0.2 µF<br>0.3 µF<br>+<br>D.U.T. - VDS<br>VGSGS<br>3 mA<br>IGG IDD<br>Current sampling resistors<br>Fig. 15a - Gate Charge Test Circuit<br>QG<br>VGS<br>QGS QGD<br>VG<br>Charge<br>**----- End of picture text -----**<br> **Fig. 14c - Unclamped Inductive Waveforms** **==> picture [145 x 146] intentionally omitted <==** **----- Start of picture text -----**<br> Current regulator<br>Same type as D.U.T.<br>50 kΩΩ<br>12 V 0.2 µF<br>0.3 µF<br>+<br>D.U.T. - VDS<br>VGSGS<br>3 mA<br>IGG IDD<br>Current sampling resistors<br>**----- End of picture text -----**<br> **Fig. 15b - Basic Gate Charge Waveform** **Fig. 14b - Unclamped Inductive Test Circuit** www.vishay.com 6 Document Number: 91206 S11-0446-Rev. C, 14-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **IRFP21N60L, SiHFP21N60L** Vishay Siliconix **==> picture [59 x 48] intentionally omitted <==** **==> picture [285 x 494] intentionally omitted <==** **----- Start of picture text -----**<br> Peak Diode Recovery dV/dt Test Circuit<br>+ Circuit layout considerations<br>D.U.T.<br>• Low stray inductance<br>• Ground plane<br>• Low leakage inductance<br>current transformer<br>-<br>+<br>- - +<br>Rg • dV/dt controlled by Rg +<br>•• Driver same type as D.U.T.ISD controlled by duty factor “D” - VDD<br>• D.U.T. - device under test<br>Driver gate drive<br>Period D = P.W.<br>P.W. Period<br>VGS = 10 V [a]<br>D.U.T. lSD waveform<br>Reverse<br>recovery Body diode forward<br>current current dI/dt<br>D.U.T. VDS waveform Diode recovery<br>dV/dt<br>VDD<br>Re-applied<br>voltage<br>Body diode forward drop<br>Inductor current<br>Ripple ≤ 5 % ISD<br>Note<br>a. VGS = 5 V for logic level devices<br>**----- End of picture text -----**<br> **Fig. 16 - For N-Channel** _Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91206._ Document Number: 91206 S11-0446-Rev. C, 14-Mar-11 www.vishay.com 7 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **Package Information** Vishay Siliconix www.vishay.com ## **TO-247AC (High Voltage)** ## **VERSION 1: FACILITY CODE = 9** ||**MILLIMETERS**|**MILLIMETERS**||||**MILLIMETERS**|**MILLIMETERS**|| |---|---|---|---|---|---|---|---|---| |**DIM.**|**MIN.**|**MAX.**|**NOTES**||**DIM.**|**MIN.**|**MAX.**|**NOTES**| |A|4.83|5.21|||D1|16.25|16.85|5| |A1|2.29|2.55|||D2|0.56|0.76|| |A2|1.50|2.49|||E|15.50|15.87|4| |b|1.12|1.33|||E1|13.46|14.16|5| |b1|1.12|1.28|||E2|4.52|5.49|3| |b2|1.91|2.39|6||e|5.44 BSC||| |b3|1.91|2.34|||L|14.90|15.40|| |b4|2.87|3.22|6, 8||L1|3.96|4.16|6| |b5|2.87|3.18|||Ø P|3.56|3.65|7| |c|0.55|0.69|6||Ø P1|7.19 ref.||| |c1|0.55|0.65|||Q|5.31|5.69|| |D|20.40|20.70|4||S|5.54|5.74|| ## **Notes** > (1) Package reference: JEDEC® TO247, variation AC - (2) All dimensions are in mm - (3) Slot required, notch may be rounded > (4) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm per side. These dimensions are measured at the outermost extremes of the plastic body > (5) Thermal pad contour optional with dimensions D1 and E1 > (6) Lead finish uncontrolled in L1 > (7) Ø P to have a maximum draft angle of 1.5° to the top of the part with a maximum hole diameter of 3.91 mm > (8) Dimension b2 and b4 does not include dambar protrusion. Allowable dambar protrusion shall be 0.1 mm total in excess of b2 and b4 dimension at maximum material condition Revision: 19-Oct-2020 Document Number: 91360 **1** For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **Package Information** **==> picture [77 x 10] intentionally omitted <==** **----- Start of picture text -----**<br> www.vishay.com<br>**----- End of picture text -----**<br> ## Vishay Siliconix ## **VERSION 2: FACILITY CODE = Y** **==> picture [430 x 278] intentionally omitted <==** **----- Start of picture text -----**<br> 4 A A<br>B E ØP7 (Datum B)<br>E/2 S A2 Ø k M D B M<br>3 R/2 ØP1<br>A<br>D2<br>Q<br>2 x R 4 4<br>(2) D D1<br>1 2 3 D 4<br>Thermal pad<br>5 L1<br>C L 4<br>E1<br>See view B A 0.01 M D B M<br>2 x b2 C View A - A<br>2 x e<br>3 x b<br>b4 A1<br>0.10 M C A M<br>Planting (b1, b3, b5) Base metal<br>Lead Assignments<br>1. Gate D D E E<br>2. Drain<br>3. Source C C (c) c1<br>4. Drain<br>(b, b2, b4)<br>(4)<br>Section C - C, D - D, E - E<br>View B<br>**----- End of picture text -----**<br> ||**MILLIMETERS**|**MILLIMETERS**| |---|---|---| |**DIM.**|**MIN.**|**MAX.**| |A|4.58|5.31| |A1|2.21|2.59| |A2|1.17|2.49| |b|0.99|1.40| |b1|0.99|1.35| |b2|1.53|2.39| |b3|1.65|2.37| |b4|2.42|3.43| |b5|2.59|3.38| |c|0.38|0.86| |c1|0.38|0.76| |D|19.71|20.82| |D1|13.08|-| ||**MILLIMETERS**|**MILLIMETERS**|| |---|---|---|---| |**DIM.**|**MIN.**|**MAX.**|**NOTES**| |D2|0.51|1.30|| |E|15.29|15.87|| |E1|13.72|-|| |e|5.46 BSC||| |Ø k|0.254||| |L|14.20|16.25|| |L1|3.71|4.29|| |Ø P|3.51|3.66|| |Ø P1|-|7.39|| |Q|5.31|5.69|| |R|4.52|5.49|| |S|5.51 BSC||| ||||| ## **Notes** > (1) Dimensioning and tolerancing per ASME Y14.5M-1994 - (2) Contour of slot optional > (3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body > (4) Thermal pad contour optional with dimensions D1 and E1 - (5) Lead finish uncontrolled in L1 > (6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") - (7) Outline conforms to JEDEC outline TO-247 with exception of dimension c Revision: 19-Oct-2020 Document Number: 91360 **2** For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **Package Information** Vishay Siliconix www.vishay.com ## **VERSION 3: FACILITY CODE = N** **==> picture [251 x 280] intentionally omitted <==** **----- Start of picture text -----**<br> A<br>B E A P1<br>R/2 P<br>N A2<br>D<br>C<br>C<br>b4 E1<br>b2b e A1 0.01 M D B M<br>0.10 M C A M<br>b1, b3, b5<br>Base metal<br>b, b2, b4<br>Plating<br>D2<br>Q S<br>M<br>R D B<br>D1<br>D M<br>K<br>L1<br>L<br>c c1<br>**----- End of picture text -----**<br> ||**MILLIMETERS**|**MILLIMETERS**|||**MILLIMETERS**|**MILLIMETERS**| |---|---|---|---|---|---|---| |**DIM.**|**MIN.**|**MAX.**||**DIM.**|**MIN.**|**MAX.**| |A|4.65|5.31||D2|0.51|1.35| |A1|2.21|2.59||E|15.29|15.87| |A2|1.17|1.37||E1|13.46|-| |b|0.99|1.40||e|5.46 BSC|| |b1|0.99|1.35||k|0.254|| |b2|1.65|2.39||L|14.20|16.10| |b3|1.65|2.34||L1|3.71|4.29| |b4|2.59|3.43||N|7.62 BSC|| |b5|2.59|3.38||P|3.56|3.66| |c|0.38|0.89||P1|-|7.39| |c1|0.38|0.84||Q|5.31|5.69| |D|19.71|20.70||R|4.52|5.49| |D1|13.08|-||S|5.51 BSC|| |ECN: E20-0545-Rev. F, 19-Oct-2020<br>DWG: 5971||||||| ECN: E20-0545-Rev. F, 19-Oct-2020 DWG: 5971 ## **Notes** > (1) Dimensioning and tolerancing per ASME Y14.5M-1994 - (2) Contour of slot optional > (3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body > (4) Thermal pad contour optional with dimensions D1 and E1 - (5) Lead finish uncontrolled in L1 > (6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") Revision: 19-Oct-2020 Document Number: 91360 **3** For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **Legal Disclaimer Notice** Vishay www.vishay.com **==> picture [59 x 48] intentionally omitted <==** ## **Disclaimer** ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. _**© 2019 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED**_ Revision: 01-Jan-2019 Document Number: 91000 **1**
Updated at March 14, 2026
Vishay is a global leader in the manufacturing of discrete semiconductors and passive electronic components. Renowned for its exceptional quality and engineering expertise, the company produces highly reliable solutions that drive innovation across the industrial, automotive, telecommunications, and consumer electronics markets. From advanced factory automation to vehicle electrification, Vishay components provide the foundational building blocks for modern electronic design. The company's expansive portfolio is heavily focused on efficient power management, signal routing, and energy storage. Within its passive component lineup, Vishay is recognized for its extensive array of high-performance capacitors, including robust aluminium electrolytic, film, and polymer variants, alongside highly efficient power inductors. In the realm of discrete semiconductors, Vishay is a premier manufacturer of single and dual MOSFETs, as well as a vast selection of Schottky, Zener, and fast-recovery rectifier diodes designed for demanding power applications. Furthermore, Vishay delivers industry-leading circuit protection and thermal management solutions. With a broad offering of transient voltage suppressors (TVS diodes) and temperature-sensing NTC thermistors, these components are engineered to safeguard sensitive circuitry against both electrical and thermal overstress. By combining this vital mix of advanced discretes and passives, Vishay enables engineers to develop robust, space-saving, and highly resilient electronic systems.
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