IRFI4019H-117PXKMA1

Dual MOSFET, N Channel, 150 V, 150 V, 8.7 A, 8.7 A, 0.08 ohm

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Manufacturer: INFINEON
Product type: Dual MOSFETs
Available until stocks are exhausted
SVHC: No SVHC (21-Jan-2025)
No. of Pins: 5Pins
Channel Type: N Channel
Product Range: -
Qualification: -
Transistor Case Style: TO-220FP
Operating Temperature Max: 150°C
Power Dissipation N Channel: 18W
Power Dissipation P Channel: 18W
Drain Source Voltage Vds N Channel: 150V
Drain Source Voltage Vds P Channel: 150V
Continuous Drain Current Id N Channel: 8.7A
Continuous Drain Current Id P Channel: 8.7A
Drain Source On State Resistance N Channel: 0.08ohm
Drain Source On State Resistance P Channel: 0.08ohm

Delivery and price
Units per pack	10
Price	2.35 €
Current stock	50+
Lead time	30 days

Datasheet

## IRFI4019H-117P 

## **Features** 

Integrated Half-Bridge Package Reduces the Part Count by Half Facilitates Better PCB Layout Key Parameters Optimized for Class-D Audio Amplifier Applications Low RDS(ON) for Improved Efficiency Low Qg and Qsw for Better THD and Improved Efficiency 

Low Qrr for Better THD and Lower EMI Can Delivery up to 200W per Channel into 8Ω Load in Half-Bridge Configuration Amplifier Lead-Free Package 

## **Description** 

**Key Parameters** VDS 150 V ~~ee ee ee~~ RDS(ON) typ. @ 10V 80 m ~~ee ee ese~~ Qg typ. 13 nC ~~ee ee~~ Qsw typ. 4.1 nC ~~ee ee ee~~ RG(int) typ. 2.5 Ω ~~ee ee ee~~ TJ max 150 °C ~~ee ee~~ TO-220 Full-Pak 5 PIN **G1, G2 D1, D2 S1, S2** Gate Drain Source 

This Digital Audio MosFET Half-Bridge is specifically designed for Class D audio amplifier applications. It consists of two power MosFET switches connected in half-bridge configuration. The latest process is used to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery, and internal Gate resistance are optimized to improve key Class D audio amplifier performance factors such as efficiency, THD and EMI. These combine to make this Half-Bridge a highly efficient, robust and reliable device for Class D audio amplifier applications. 

## **Absolute Maximum Ratings** 

|~~es~~<br>~~es~~|**Parameter**|**Max.**|**Units**|
|---|---|---|---|
|VDS<br>~~es~~<br>~~es~~|Drain-to-Source Voltage|150|V|
|VGS<br>~~es~~<br>~~Qe~~|Gate-to-Source Voltage<br>~~Qe~~|±20<br>~~Qe~~||
|ID@ TC= 25°C<br>~~Qe~~<br>~~Qe~~<br>~~es~~|Continuous Drain Current, VGS@ 10V<br>~~Qe~~<br>~~Qe~~|8.7<br>~~Qe~~<br>~~Qe~~|A|
|ID@ TC= 100°C<br>~~Qe~~<br>~~es~~<br>~~es ee~~|Continuous Drain Current, VGS@ 10V<br>~~Qe~~<br>~~ee~~|6.2<br>~~Qe~~||
|IDM<br>~~es~~<br>~~es ee~~<br>~~es~~|Pulsed Drain Current<br>~~ee~~<br>~~Gn~~|34||
|EAS<br>~~es ee~~<br>~~es~~|Single Pulse Avalanche Energy<br>~~ee~~<br>~~Gn~~|77|mJ|
|PD@TC= 25°C<br>~~es~~|Power Dissipation<br>~~Gn~~|18|W|
|PD@TC= 100°C<br>~~ee~~|Power Dissipation<br>~~re~~|7.2||
|~~ee~~|Linear Derating Factor<br>~~re~~|0.15|W/°C|
|TJ<br>TSTG<br>~~ee~~|Operating Junction and<br>Storage Temperature Range<br>~~re~~|-55  to + 150|°C|
|~~ee~~|Soldering Temperature, for 10 seconds<br>(1.6mm from case)<br>~~re~~|300||
|~~ee ~~<br>~~Gn~~|Mountingtorque,6-32 or M3 screw<br> ~~re~~<br>~~Gn~~|10lb in(1.1N m)<br>~~Gn~~|~~Gn~~|



8/22/06 

**Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

|~~a~~|**Parameter**|**Min.**|**Typ.**|**Max. **|**Units**|**Conditions**|
|---|---|---|---|---|---|---|
|BVDSS<br>~~a~~|Drain-to-Source Breakdown Voltage|150|–––|–––|V|VGS= 0V,ID= 250µA|
|∆ΒVDSS/∆TJ<br>~~a~~|Breakdown Voltage Temp. Coefficient|–––|0.19|–––|V/°C|Reference to 25°C,ID= 1mA|
|RDS(on)<br>~~aSS~~|Static Drain-to-Source On-Resistance<br>~~SS~~|–––|80|95|mΩ<br>~~ee~~|VGS= 10V,ID= 5.2A<br>~~ee~~|
|VGS(th)<br>~~SS~~<br>~~a~~|Gate Threshold Voltage<br>~~SS~~<br>|3.0<br>|–––<br>|4.9<br>|V<br>~~ee~~<br>|VDS= VGS, ID= 50µA<br>~~ee~~<br>~~**e**~~<br>~~ee~~|
|∆VGS(th)/∆TJ<br>~~SS~~<br>~~aee~~|Gate Threshold Voltage Coefficient<br>~~SS~~<br>~~e~~|–––<br>~~e~~<br>~~e~~|-11<br>~~e~~~~**e**~~<br>~~e~~|–––<br>~~**e**~~|mV/°C<br>~~ee~~<br>~~**e**~~||
|IDSS<br>~~SS~~<br>~~aee~~<br>~~———————————EE~~|Drain-to-Source Leakage Current<br>~~SS~~<br>~~e~~<br>~~———————————EE~~|–––<br>~~e~~<br>~~e~~<br>~~a~~|–––<br>~~e~~~~**e**~~<br>~~e~~|20<br>~~**e**~~<br>~~ee~~|µA<br>~~ee~~<br>~~**e**~~<br>~~ee~~<br>~~———————————EE~~|VDS= 150V,VGS= 0V<br>~~ee~~<br>~~**e**~~<br>~~ee~~|
|||–––<br>~~e~~<br>~~e~~<br>~~a~~<br>~~———————————EE~~|–––<br>~~e~~~~**e**~~<br>~~e~~<br>~~———————————EE~~|250<br>~~**e**~~<br>~~ee~~<br>~~———————————EE~~||VDS= 150V,VGS= 0V,TJ= 125°C<br>~~**e**~~<br>~~ee~~<br>~~———————————EE~~|
|IGSS<br>~~ee~~<br>~~———————————EE~~<br>~~a~~|Gate-to-Source Forward Leakage<br>~~e~~<br>~~———————————EE~~<br>|–––<br>~~e~~<br>~~e~~<br>~~a~~<br>~~———————————EE~~<br>|–––<br>~~e~~~~**e**~~<br>~~e~~<br>~~———————————EE~~<br>|100<br>~~**e**~~<br>~~ee~~<br>~~———————————EE~~<br>~~Ge~~|nA<br>~~**e**~~<br>~~ee~~<br>~~———————————EE~~<br>~~Ge~~|VGS= 20V<br>~~**e**~~<br>~~ee~~<br>~~———————————EE~~|
||Gate-to-Source Reverse Leakage<br>~~———————————EE~~<br>~~ss~~|–––<br>~~———————————EE~~<br>~~ss~~|–––<br>~~———————————EE~~<br>~~ss~~|-100<br>~~———————————EE~~<br>~~ssGe~~||VGS= -20V<br>~~———————————EE~~|
|gfs<br>~~———————————EE~~<br>~~a~~|Forward Transconductance<br>~~———————————EE~~<br><br>~~NN~~|11<br>~~———————————EE~~<br><br>~~NN~~|–––<br>~~———————————EE~~<br>|–––<br>~~———————————EE~~<br>~~Ge~~|S<br>~~———————————EE~~<br>~~Ge~~|VDS= 50V,ID= 5.2A<br>~~———————————EE~~|
|Qg|Total Gate Charge|–––|13|20|nC|See Fig. 6 and 19<br>VGS= 10V<br>ID= 5.2A<br>VDS= 75V|
|Qgs1|Pre-Vth Gate-to-Source Charge|–––|3.3|–––|||
|Qgs2|Post-Vth Gate-to-Source Charge|–––|0.8|–––|||
|Qgd|Gate-to-Drain Charge|–––|3.9|–––|||
|Qgodr|Gate Charge Overdrive|–––|5.0|–––|||
|Qsw|Switch Charge(Qgs2+ Qgd)|–––|4.1|–––|||
|RG(int)<br>~~a~~|Internal Gate Resistance<br>~~NN~~|–––<br>~~NN~~|2.5|–––|Ω||
|td(on)|Turn-On DelayTime|–––|7.0|–––|ns|ID= 5.2A<br>RG= 2.4Ω<br>VDD= 75V, VGS= 10V<br>@|
|tr|Rise Time|–––|6.6|–––|||
|td(off)|Turn-Off DelayTime|–––|13|–––|||
|tf|Fall Time|–––|3.1|–––|||
|Ciss|Input Capacitance|–––|810|–––|pF|ƒ= 1.0MHz,See Fig.5<br>VGS= 0V<br>VDS= 25V|
|Coss|Output Capacitance|–––|100|–––|||
|Crss|Reverse Transfer Capacitance|–––|15|–––|||
|Coss<br>~~a ~~|Effective Output Capacitance<br> ~~Ns~~|–––<br>~~Ns~~|97<br>~~Ns~~|–––<br>~~Ns~~||VGS= 0V,VDS= 0V to 120V|
|LD|Internal Drain Inductance|–––|4.5|–––|nH|S<br>D<br>G<br>Between  lead,<br>6mm (0.25in.)<br>from package<br>and center of die contact|
|LS|Internal Source Inductance|–––|7.5|–––|||



**Diode Characteristics** 

||**Parameter**|**Min.**|**Typ.**|**Max. **|**Units**|**Conditions**|
|---|---|---|---|---|---|---|
|IS@ TC= 25°C|Continuous Source Current<br>(Body Diode)|–––|–––|8.7|A|showing  the<br>integral reverse<br>p-n junction diode.<br>MOSFET symbol|
|ISM|Pulsed Source Current<br>(Body Diode)|–––|–––|34|||
|VSD<br>~~a~~<br>~~eee~~|Diode Forward Voltage<br>~~NN~~<br>~~eee~~|–––<br>~~NN~~<br>~~eee~~|–––<br>~~eee~~|1.3<br>~~eee~~|V<br>~~eee~~|TJ= 25°C,IS= 5.2A,VGS= 0V<br>~~eee~~|
|trr<br>~~eee~~|Reverse RecoveryTime<br>~~eee~~|–––<br>~~eee~~|57<br>~~eee~~|86<br>~~eee~~|ns<br>~~eee~~|TJ= 25°C, IF= 5.2A<br>di/dt = 100A/µs<br>~~eee~~<br>~~®~~|
|Qrr<br>~~eee~~<br>~~a~~|Reverse RecoveryCharge<br>~~eee~~|–––<br>~~eee~~|140<br>~~eee~~|210<br>~~eee~~|nC<br>~~eee~~||



Specifications refer to single MosFET. 

Rθ is measured at Notes: Repetitive rating;  pulse width limited by max. junction temperature. @© Limited by Tjmax. See Figs. 14, 15, 17a, 17b for repetitive T, of approximately 90°C. Starting TJ = 25°C, L = 5.8mH, RG = 25Ω, IAS = 5.2A. avalanche information Pulse width ≤ 400µs; duty cycle ≤ 2%. © Specifications refer to single MosFET. 

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100<br>VGS<br>TOP           15V<br>12V<br>10V<br>10 9.0V<br>8.0V<br>7.0V<br>                    6.0V<br>BOTTOM 5.5V<br>1<br>5.5V<br>0.1<br>≤ 60µs PULSE WIDTH<br>Tj = 25°C<br>0.01<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 1.** Typical Output Characteristics 

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**----- Start of picture text -----**<br>
100 Py ft  U<br>10 T J  = 175°C<br>1 VA TJ = 25 ° C L<br>ff |<br>Pf fi VDS = 50V  +<br>≤ 60µs PULSE WIDTH<br>0.1 fifo<br>4 5 6 7 8<br>VGS, Gate-to-Source Voltage (V)<br>)(Α<br>ID, Drain-to-Source Current<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

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100000<br>VGS   = 0V,       f = 1 MHZ<br>Ciss   = Cgs + Cgd,  Cds SHORTED<br>10000 Crss   = Cgd<br>Coss  = Cds + Cgd<br>1000 Ciss<br>Coss<br>100<br>Crss<br>101 Eesti Se<br>1 10 100 1000<br>VDS, Drain-to-Source Voltage (V)<br>C, Capacitance (pF)<br>**----- End of picture text -----**<br>


**Fig 5.** Typical Capacitance vs.Drain-to-Source Voltage 

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100<br>VGS<br>TOP           15V<br>12V<br>10V<br>9.0V<br>8.0V<br>7.0V<br>10                     6.0V<br>BOTTOM 5.5V<br>5.5V<br>1<br>≤ 60µs PULSE WIDTH<br>Tj = 150°C<br>0.1<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 2.** Typical Output Characteristics 

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2.5<br>ID = 5.2A<br>VGS = 10V<br>2.0 aa /<br>1.5<br>1.0<br>Sane? 4Geeee<br>Sageep4eeee<br>0.5<br>eT<br>Seeeeeeeeen<br>PETE<br>0.0 TT | Ty<br>-60 -40 -20 0 20 40 60 80 100 120 140 160<br>TJ,  Junction Temperature (°C)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>**----- End of picture text -----**<br>


**Fig 4.** Normalized On-Resistance vs. Temperature 

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**----- Start of picture text -----**<br>
20<br>ID= 5.2A<br>VDS= 120V<br>16 VDS= 75V<br>VDS= 30V<br>12<br>8<br>4<br>0 fo<br>0 5 10 15 20<br> QG  Total Gate Charge (nC)<br>VGS, Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 6.** Typical Gate Charge vs.Gate-to-Source Voltage 

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**==> picture [210 x 200] intentionally omitted <==**

**----- Start of picture text -----**<br>
100 a a as<br>Es<br>10 aP| fl<br>TJ = 150°C SS<br>a e a<br>1 ee ee es<br>pf f TJ = 25°C |<br>Poff fy<br>VGS = 0V<br>al o<br>0.1<br>0.0 0.5 1.0 1.5<br>VSD, Source-to-Drain Voltage (V)<br>ISD, Reverse Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

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100<br>= OPERATION IN THIS AREA<br>LIMITED BY R DS(on)<br>—-t tit<br>1m sec<br>10 0µ sec<br>yagi ata<br>10 ww tt<br>p y N T<br>PS<br>DC<br>10msec<br>1 Td SE C TTI<br>pi<br>SS Tc = 25°C<br>Tj = 150°C<br>Single Pulse<br>0.1 iAEDcs HtCII<br>1 10 100 1000<br>VDS  , Drain-toSource Voltage (V)<br>ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 8.** Maximum Safe Operating Area 

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10<br>8<br>RERRRRREEE<br>NEL<br>6<br>4 aN<br>OPN<br>2 EEL EEN<br>0<br>25 50 75 100 125 150<br>TJ , Junction Temperature (°C)<br>ID  , Drain Current (A)<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
5.0<br>PN TP<br>4.0<br>aN ID = 50µA<br>TTT<br>3.0<br>BX<br>2.0<br>-75 -50 -25 0 25 50 75 100 125 150<br>TJ , Temperature ( °C )<br>VGS(th) Gate threshold Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 9.** Maximum Drain Current vs. Case Temperature 

**Fig 10.** Threshold Voltage vs. Temperature 

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**----- Start of picture text -----**<br>
10<br>TE TE<br>D = 0.50<br>0.20<br>1 Pf eT] ||<br>0.10<br>0.05<br>rrr<br>0.1 0.020.01 τJ τJ R1 R1 R2 R2 R3R3 τCτ Ri (1.508254°C/W) 0.000814τι (sec)<br>Tol PR τ1 τ = 1 τ2 τ2 τ3τ3 2.154008 0.111589<br>ae ee ee Ci= Ci=  v τi/τRii/Ri v v es 3.237738 2.2891<br>0.01<br>SINGLE PULSE Notes:<br>( THERMAL RESPONSE ) 1. Duty Factor D = t1/t2<br>0.001 FT LT ELE ELT EEE 2. Peak Tj = P dm x Zthjc + Tc |<br>1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10<br>t1 , Rectangular Pulse Duration (sec)<br>Thermal Response ( Z thJC )<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

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**==> picture [202 x 193] intentionally omitted <==**

**----- Start of picture text -----**<br>
0.5<br>ID = 5.2A<br>0.4<br>0.3<br>0.2<br>TJ = 125°C<br>0.1<br>TJ = 25°C<br>0.0<br>4 5 6 7 8 9 10<br>VGS, Gate-to-Source Voltage (V)<br>)Ω<br>RDS(on),  Drain-to -Source On Resistance (<br>**----- End of picture text -----**<br>


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350<br>                 I D<br>300 TOP          0.91A<br>                1.1A<br>BOTTOM   5.2A<br>250<br>200<br>150<br>100<br>500 P|RE<br>25 50 75 100 125 150<br>Starting TJ, Junction Temperature (°C)<br>EAS, Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


## **Fig 12.** On-Resistance Vs. Gate Voltage 

## **Fig 13.** Maximum Avalanche Energy Vs. Drain Current 

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**----- Start of picture text -----**<br>
Driver Gate Drive<br>P.W.<br>D.U.T + [$$ P.W. Period — — D = —— Period<br>) [©)]    •  Circuit Layout Considerations Jt V | GS « =10V<br> •<br>| 1] - LowGround StrayPla I n eductance<br> •   CurrentLow LeakageTransformerInductance @ D.U.T. ISD Waveform<br>+<br>Reverse<br>= Recovery Body Diode Forward \<br>- a - ® + Current r Current di/dt /<br>00 ® D.U.T. VDS Waveform Diode Recovery we<br>dv/dt<br>; ‘ VDD<br>•   Re-Applied<br>Re ) •   Driverdv/dt controlledsame type byas RgD.U.T. Vpp** + Voltage Body Diode  Forward Drop [_<br>•   - Inductor Curent<br>•<br>D.U.T. - Device Under Test CO |<br>Isp controlled by Duty Factor "D" ® Ripple  ≤ 5% ISD<br>**----- End of picture text -----**<br>


**Fig 14.** 

for HEXFET Power MOSFETs 

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**==> picture [147 x 98] intentionally omitted <==**

**----- Start of picture text -----**<br>
15V<br>VDS L DRIVER<br>RG D.U.T +<br>- [V][DD]<br>IAS<br>20VVGS<br>tp 0.01Ω<br>**----- End of picture text -----**<br>


**Fig 15a.** Unclamped Inductive Test Circuit 

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**----- Start of picture text -----**<br>
≤ 1<br>≤ 0.1 %<br>**----- End of picture text -----**<br>


**Fig 16a.** Switching Time Test Circuit 

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**----- Start of picture text -----**<br>
L<br>VCC<br>DUT<br>0<br>S<br>**----- End of picture text -----**<br>


**Fig 17a.** Gate Charge Test Circuit 

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**----- Start of picture text -----**<br>
V(BR)DSS<br>tp<br>IAS<br>**----- End of picture text -----**<br>


**Fig 15b.** Unclamped Inductive Waveforms 

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**----- Start of picture text -----**<br>
V<br>DS<br>90%<br>10%<br>V<br>GS<br>td(on) tr td(off) tf<br>**----- End of picture text -----**<br>


**Fig 16b.** Switching Time Waveforms 

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**----- Start of picture text -----**<br>
Id<br>Vds<br>Vgs<br>Vgs(th)<br>Qgs1 Qgs2 Qgd Qgodr<br>**----- End of picture text -----**<br>


**Fig 17b** Gate Charge Waveform 

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## TO-220 Full-Pak 5-Pin Package Outline, Lead-Form Option 117 

(Dimensions are shown in millimeters (inches)) 

## TO-220 Full-Pak 5-Pin Part Marking Information 

Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 08/06 

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7 

Note:  For the most current drawings please refer to the IR website at: http://www.irf.com/package/

Updated at June 9, 2026

Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.

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