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IRFHS9351TRPBF
Dual MOSFET, P Channel, 30 V, 30 V, 5.1 A, 5.1 A, 0.135 ohm
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- Manufacturer: INFINEON
- Product type: Dual MOSFETs
- Transistor Polarity:Dual P Channel; Continuous Drain Current Id:-5.1A; Drain Source Voltage Vds:-30V; On Resistance Rds; Available until stocks are exhausted Alternative available
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (21-Jan-2025)
- No. of Pins: 8Pins
- Channel Type: P Channel
- Product Range: HEXFET Series
- Qualification: -
- Transistor Case Style: DFN2020
- Operating Temperature Max: 150°C
- Power Dissipation N Channel: 1.4W
- Power Dissipation P Channel: 1.4W
- Drain Source Voltage Vds N Channel: 30V
- Drain Source Voltage Vds P Channel: 30V
- Continuous Drain Current Id N Channel: 5.1A
- Continuous Drain Current Id P Channel: 5.1A
- Drain Source On State Resistance N Channel: 0.135ohm
- Drain Source On State Resistance P Channel: 0.135ohm
| Delivery and price | |
|---|---|
| Units per pack | 250 |
| Price | 0.342 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## HEXFET ® Power MOSFET **==> picture [464 x 119] intentionally omitted <==** **----- Start of picture text -----**<br> VDS -30 V TOP VIEW<br>VGS max ±20 V<br>RDS(on) max 170 m Ω S1 1 -) 0 o oopeee s orm 6 D1 D1<br>(@VGS = -10V) D1 $2_<br>ID -3.4 @ A G1 2 ep4 poo op FET1 e == Le 5 G2 | 3 ~>ate<br>(@TC = 25°C) _ | ry<br>D2 3 D2 4 S2<br>J SS FET2 a a L L D2<br>1 ! f r |<br>2mm x 2mm Dual PQFN<br>**----- End of picture text -----**<br> ## **Applications** Charge and Discharge Switch for Battery Application System/load switch ## **Features and Benefits** ## **Features** Low RDSon ( ≤ 170m Ω) Low Thermal Resistance to PCB ( ≤ 19°C/W) Low Profile ( ≤ 1.0 mm) Compatible with Existing Surface Mount Techniques RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1, Industrial Qualification ## **Benefits** Lower Conduction Losses Enable better thermal dissipation results in Increased Power Density Easier Manufacturing Environmentally Friendlier Increased Reliability **Standard Pack Orderable part number Package Type Note Form Quantity** ~~GG~~ IRFHS9351TRPBF PQFN 2mm x 2mm Tape and Reel 4000 ~~poPr IRFHS9351TR2PBF PQFN 2mm x 2mm Tape and Reel 400~~ EOL notice # 259 ## **Absolute Maximum Ratings** ||**Parameter**|**Max.**|**Units**| |---|---|---|---| |VDS|Drain-to-Source Voltage|-30|V| |VGS|Gate-to-Source Voltage|± 20|| |ID@ TA= 25°C|Continuous Drain Current, VGS@ -10V|-2.3|A| |ID@ TA= 70°C<br>~~Pe~~|Continuous Drain Current, VGS@ -10V<br>~~Pe~~|-1.5|| |ID@ TC= 25°C<br>~~Pe~~|Continuous Drain Current, VGS@ -10V<br>~~Pe~~|-5.1|| |ID@ TC= 70°C<br>~~Pe~~<br>~~a~~|Continuous Drain Current,VGS@ -10V<br>~~Pe~~<br>~~a~~|-4.1<br>~~a~~|| |ID@ TC= 25°C<br>~~a~~<br>~~Pe~~|Continuous Drain Current,VGS@ 10V(Package Limited)<br>~~a~~<br>~~Pe~~|-3.4<br>~~a~~|| |IDM<br>~~Pea~~|Pulsed Drain Current<br>~~Pea~~|-20|| |PD@TA= 25°C<br>~~Pea~~<br>~~a~~|Power Dissipation<br>~~Pea~~<br>~~a~~|1.4|W| |PD@ TA= 70°C<br>~~a~~<br>~~a~~|Power Dissipation<br>~~a~~<br>~~a~~|0.9|| |~~a~~|Linear Derating Factor<br>~~a~~|0.01|W/°C| |TJ<br>TSTG|Operating Junction and<br>Storage Temperature Range|-55 to + 150|°C| ������������ ## **Static @ TJ = 25°C (unless otherwise specified)** ||**Parameter**|**Min.**|**Typ.**|**Max.**|**Units**|**Conditions**| |---|---|---|---|---|---|---| |BVDSS|Drain-to-Source Breakdown Voltage|-30|–––|–––|V|VGS= 0V, ID= -250μA| |VDSS/ TJ|Breakdown Voltage Temp. Coefficient|–––|0.02|–––|V/°C|Reference to 25°C, ID= -1mA| |RDS(on)|Static Drain-to-Source On-Resistance|–––|135|170|m|VGS= -10V, ID= -3.1A�| |||–––|235|290||VGS= -4.5V, ID= -2.5A�| |VGS(th)|Gate Threshold Voltage|-1.3|-1.8|-2.4|V|VDS= VGS, ID= -10μA| |VGS(th)|Gate Threshold Voltage Coefficient|–––|-4.6|–––|mV/°C|| |IDSS|Drain-to-Source Leakage Current|–––|–––|-1.0|μA|VDS= -24V, VGS= 0V| |||–––|–––|-150||VDS= -24V, VGS= 0V, TJ= 125°C| |IGSS|Gate-to-Source Forward Leakage|–––|–––|-100|nA|VGS= -20V| ||Gate-to-Source Reverse Leakage|–––|–––|100||VGS= 20V| |gfs|Forward Transconductance|2.4|–––|–––|S|VDS= -10V, ID= -3.1A| |Qg|Total Gate Charge�|–––|1.9|–––|nC|VDS= -15V,VGS= -4.5V,ID= - 3.1A| |Qg|Total Gate Charge�|–––|3.7|–––|nC|VDS= -15V<br>VGS= -10V<br>ID= -3.1A| |Qgs|Gate-to-Source Charge�|–––|0.6|–––||| |Qgd|Gate-to-Drain Charge�|–––|1.1|–––||| |RG|Gate Resistance�|–––|17|–––||| |td(on)|Turn-On DelayTime|–––|8.3|–––|ns|RG= 1.8<br>See Figs. 19a & 19b<br>VDD= -15V, VGS= -4.5V�<br>ID= -3.1A| |tr|Rise Time|–––|30|–––||| |td(off)|Turn-Off DelayTime|–––|6.3|–––||| |tf|Fall Time|–––|7.9|–––||| |Ciss|Input Capacitance|–––|160|–––|pF|ƒ= 1.0KHz<br>VGS= 0V<br>VDS= -25V| |Coss|Output Capacitance|–––|39|–––||| |Crss|Reverse Transfer Capacitance|–––|26|–––||| ## **Diode Characteristics** ||**Parameter**|**Min.**|**Typ.**|**Max.**|**Units**|**Conditions**|**Conditions**| |---|---|---|---|---|---|---|---| |IS|Continuous Source Current<br>(BodyDiode)|–––|–––|-5.1|A|G<br>D<br>S<br>showing the<br>integral reverse<br>p-njunction diode.<br>MOSFET symbol|| |ISM|Pulsed Source Current<br>(BodyDiode)��|–––|–––|-20|||| |VSD|Diode Forward Voltage|–––|–––|-1.2|V|TJ= 25°C, IS= -3.1A, VGS= 0V�|| |trr|Reverse Recovery Time|–––|20|30|ns|TJ= 25°C, IF= -3.1A, VDD= -15V<br>di/dt = 370/μs�|| |Qrr|Reverse RecoveryCharge|–––|42|63|nC||| |**Thermal Resistance**|||||||| ||**Parameter**||**Typ.**|||**Max.**|**Units**| |R JC (Bottom)|Junction-to-Case�||–––|||19|°C/W| |R JC (Top)|Junction-to-Case�||–––|||170|| |R JA|Junction-to-Ambient�|||||90|| |R JA|Junction-to-Ambient(t<10s) �||–––|||75|| ## **������** - Repetitive rating; pulse width limited by max. junction temperature. - Current limited by package. . - Pulse width ≤ 400μs; duty cycle ≤ 2%. - When mounted on 1 inch square copper board. - R θ is measured at TJ of approximately 90°C. - For DESIGN AID ONLY, not subject to production testing. . � ����������� ��������������������������������� ������������������������� ��������������������������������������������� **==> picture [215 x 659] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>VGS<br>TOP -10V<br>-8.0V<br>-5.0V<br>-4.5V<br>i -3.5V<br>-3.3V<br>10 aaa -3.0V<br>BOTTOM -2.8V<br>Of<br>1<br>-2.8V<br>≤ 60μs PULSE WIDTH<br>or, aeallll Tj = 25°C Hi mil<br>0.1<br>0.1 1 10 100<br>-VDS, Drain-to-Source Voltage (V)<br>Fig 1. Typical Output Characteristics<br>100<br>Ee ee ee es ee es<br>==aaeee<br>a a a<br>10 rr<br>TJ = 150°C<br>ty Ae ee<br>,<br>1<br>| A<br>| fy TJ = 25°C | | | |<br>ee ee V DS = -15V ||<br>≤ 60μs PULSE WIDTH<br>0.1 a<br>1 2 3 4 5 6 7 8<br>-VGS, Gate-to-Source Voltage (V)<br>Fig 3. Typical Transfer Characteristics<br>1000<br>-—— VGS = 0V, f = 1 KHZ<br>= Ciss = Cgs + Cgd, Cds SHORTED<br>C = C<br>rss gd<br>_ Coss = Cds + Cgd<br>CTT<br>C<br>iss<br>Sl Th mall<br>100 — C pppoe<br>oss<br>PSST>a eeEEee<br>C rss<br>PP PSST<br>| | Pp<br>10<br>Baal mal<br>1 10 100<br>-VDS, Drain-to-Source Voltage (V)<br>C, Capacitance (pF)<br>-ID, Drain-to-Source Current (A)<br>-ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br> **Fig 5.** Typical Capacitance vs.Drain-to-Source Voltage **==> picture [214 x 428] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>VGS<br>TOP -10V<br>-8.0V<br>-5.0V<br>-4.5V<br>-3.5V<br>-3.3V SEM ret<br>10 -3.0V A<br>BOTTOM -2.8V<br>fe<br>1<br>-2.8V<br>≤ 60μs PULSE WIDTH<br>0.1 aePL Tj = 150°C ill<br>0.1 1 10 100<br>-VDS, Drain-to-Source Voltage (V)<br>Fig 2. Typical Output Characteristics<br>1.6<br>I = -3.1A<br>D<br>V = -10V<br>GS LEE<br>1.4<br>F<br>1.2 |<br>y<br>1.0<br>p44<br>pz<br>0.8 LEE EEE<br>0.6<br>-60 -40 -20 0 20 40 60 80 100 120 140 160<br>TJ , Junction Temperature (°C)<br>RDS(on) , Drain-to-Source On Resistance (Normalized)<br>-ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br> **Fig 4.** Normalized On-Resistance vs. Temperature **==> picture [210 x 201] intentionally omitted <==** **----- Start of picture text -----**<br> 14<br>ID= -3.1A VDS= -24V<br>12 aa V DS = -15V Vin|<br>10<br>y,<br>8<br>6 / |<br>7<br>4<br>fan AA<br>2 Pty] |<br>0<br>Zn<br>0 1 2 3 4 5<br> QG, Total Gate Charge (nC)<br>-VGS, Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br> **Fig 6.** Typical Gate Charge vs.Gate-to-Source Voltage **==> picture [467 x 430] intentionally omitted <==** **----- Start of picture text -----**<br> 100 100<br>OPERATION IN THIS AREA<br>LIMITED BY RDS(on)<br>es——— atA | eal<br>10 aiS<br>oe Aeen 100μsec<br>10 1msec<br>TJ = 150°C i an<br>— pet ee<br>1<br>| FS |f | pO Ba a<br>1 4 T ae = 25°C 0eeene tenae DC Sect 10msec<br>J<br>0.1<br>Tc = 25°C<br>ee oe Spy<br>Tj = 150°C<br>| of | fF | V GS = 0V Single Pulse Ee eo<br>0.1 | f | ff 0.01 a lll<br>0.4 0.6 0.8 1.0 1.2 1.4 0.1 1 10 100<br>-VSD, Source-to-Drain Voltage (V) VDS, Drain-to-Source Voltage (V)<br> Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area<br>6 2.5<br>5<br>2.0<br>4 PANEL NX ttt<br>ID = -10uAD = -10uA = -10uA<br>32 PEE PN™\™\ EL 1.5 HEPPTETRNETNGSEERPTETRNETNGSEERRNETNGSEERETNGSEER<br>STEEL [[INE]] ~ pt NT<br>1.0<br>1 SERRE + tS<br>0<br>0.5<br>25 50 75 100 125 150<br>-75 -50 -25 0 25 50 75 100 125 150<br>TC , CaseTemperature (°C)<br>TJ , Temperature ( °C )<br>ID , Drain Current (A)<br>-ISD, Reverse Drain Current (A)<br>-VGS(th), Gate threshold Voltage (V)<br>-ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br> **Fig 7.** Typical Source-Drain Diode Forward Voltage **==> picture [440 x 439] intentionally omitted <==** **----- Start of picture text -----**<br> 6 2.5<br>5<br>2.0<br>4 PANEL NX ttt<br>ID = -10uAD = -10uA = -10uA<br>PEE PN™\™\ EL 1.5<br>232 HEPPTETRNETNGSEERPTETRNETNGSEERRNETNGSEERETNGSEER<br>STEEL [[INE]] ~ pt NT<br>1.0<br>1 SERRE +<br>0<br>0.5<br>25 50 75 100 125 150<br>-75 -50 -25 0 25 50 75 100<br>TC , CaseTemperature (°C)<br>TJ , Temperature ( °C )<br>Fig 9. Maximum Drain Current vs. Fig 10. Threshold Voltage vs. Temperature<br>Case Temperature<br>100<br>PE<br>10 All D = 0.50<br>0.20<br>—rrr<br>0.10<br>|| st} Ht HHH<br>1 0.05<br>0.02<br>— 0.01 are ry<br>0.1 pf et}<br>SINGLE PULSE Notes:<br>1. Duty Factor D = t1/t2<br>aan ( THERMAL RESPONSE ) corare<br>0.01 | 0 2. Peak Tj = P dm x Zthjc + Tc<br>1E-006 1E-005 0.0001 0.001 0.01 0.1<br>t1 , Rectangular Pulse Duration (sec)<br>ID , Drain Current (A)<br>-VGS(th), Gate threshold Voltage (V)<br>Thermal Response ( Z thJC )<br>**----- End of picture text -----**<br> **Fig 10.** Threshold Voltage vs. Temperature **Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case **==> picture [459 x 218] intentionally omitted <==** **----- Start of picture text -----**<br> 500 500<br>I = -3.1A<br>D<br>400 400<br>300 300<br>Vgs = -4.5V<br>TJ = 125°C<br>200 200<br>Vgs = -10V<br>TJ = 25°C .<br>100 | INS\ | 100 pfyy<br>> reee<br>0 5 10 15 20 25 0 2 4 6 8<br>-ID, Drain Current (A)<br>-VGS, Gate -to -Source Voltage (V)<br>Fig 12. On-Resistance vs. Gate Voltage Fig 13. Typical On-Resistance vs. Drain Current<br>Ω )<br>RDS(on), Drain-to -Source On Resistance (m<br>) Ω<br>RDS(on), Drain-to -Source On Resistance (m<br>**----- End of picture text -----**<br> **Fig 13.** Typical On-Resistance vs. Drain Current **==> picture [214 x 196] intentionally omitted <==** **----- Start of picture text -----**<br> 400<br>300<br>200<br>100<br>0<br>1E-5 1E-4 1E-3 1E-2 1E-1 1E+0<br>Time (sec)<br>Power (W)<br>**----- End of picture text -----**<br> **Fig 14** Typical Power vs. Time **==> picture [477 x 164] intentionally omitted <==** **----- Start of picture text -----**<br> Driver Gate Drive<br>P.W.<br>Period D =<br>D.U.T * + O O P.W. | —_— Period<br>) [©)] • Circuit Layout Considerations ] V | t GS=10V<br> •<br>| —| - GroundLow StrayPla I n eductance<br> • CurrentLow LeakageTransformerInductance @ D.U.T. ISD Waveform<br>+<br>Reverse<br>- a | a - ® + RecoveryCurrent Body Diode ForwardCurrent di/dt \<br>D.U.T. VDS Waveform<br>() , ©) Diode Recoverydv/dt “ — VDD<br>Re • • di/dtDriver. controlledsame typebyasRgD.U.T. V,DD + Re-AppliedVoltage Body Diode Forward Drop ms<br>• Isp controlled by Duty Factor "D" - ® t<br>• D.U.T. - Device Under Test Ripple ≤ 5% e s ISD ee<br>**----- End of picture text -----**<br> **Fig 15.** iode Reverse Recovery Test Circuit or P-Channel HEXFET ® ower MOSFETs **==> picture [226 x 50] intentionally omitted <==** **----- Start of picture text -----**<br> L<br>VCC<br>DUT<br>0<br>201 K SS<br>**----- End of picture text -----**<br> **Fig 16a.** Gate Charge Test Circuit **==> picture [188 x 140] intentionally omitted <==** **----- Start of picture text -----**<br> L<br>VDS<br>RG D.U.T V<br>+ DD<br>IAS<br>DRIVER<br>af<br>ae tp 0.01 Ω<br>15V<br>**----- End of picture text -----**<br> **Fig 17a.** Unclamped Inductive Test Circuit **==> picture [127 x 55] intentionally omitted <==** **----- Start of picture text -----**<br> -<br>+<br>≤ 0.1 %≤ 1 us<br>**----- End of picture text -----**<br> **Fig 18a.** Switching Time Test Circuit **==> picture [176 x 144] intentionally omitted <==** **----- Start of picture text -----**<br> Id<br>Vds<br>Vgs<br>Vgs(th)<br>Qgodr Qgd Qgs2 Qgs1<br>**----- End of picture text -----**<br> **Fig 16b.** Gate Charge Waveform **==> picture [152 x 121] intentionally omitted <==** **----- Start of picture text -----**<br> IAS<br>|<br>‘|<br>\<br>¢— tp<br>V(BR)DSS<br>**----- End of picture text -----**<br> **Fig 17b.** Unclamped Inductive Waveforms **==> picture [165 x 102] intentionally omitted <==** **----- Start of picture text -----**<br> td(on) tr td(off) tf<br>VGS r T . -<br>| fs<br>10%<br>N<br>\/<br>90% X<br>VDS \<br>**----- End of picture text -----**<br> **Fig 18b.** Switching Time Waveforms ## **PQFN Package Details** ## **PQFN Part Marking** **Note: For the most current drawing please refer to IR website at:** http://www.irf.com/package/ ## **PQFN Tape and Reel** **==> picture [202 x 83] intentionally omitted <==** **----- Start of picture text -----**<br> CORE a<br>TAPE i n<br>NS)<br>i<br>Remark:<br>Width - Dimension above are typical dimensions.<br>Table 2:COVERTAPE TOLERANCE - Cover tape thickness is 0.048mm +/- 0.005mm. - Surface resistivity 10E5 < Rs <10E9.<br> (WIDTH)<br>5.4 mm +/- 0.1 mm<br>9.5 mm +/- 0.1 mm<br>**----- End of picture text -----**<br> **Note: For the most current drawing please refer to IR website at:** http://www.irf.com/package/ ## **Qualification information** † |**Qualification information**<br>†||| |---|---|---| |Qualification level|Industrial<br>††<br>(per JEDEC JES D47F<br>†††guidelines)|| |Moisture Sensitivity Level|PQFN 2mm x 2mm|MS L1<br>(per IPC/JEDEC J-S TD-020D<br>†††)| |RoHS compliant|Yes|| + Qualification standards can be found at International Rectifier’s web site OO http://www.irf.com/product-info/reliability tt Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ Applicable version of JEDEC standard at the time of product release. ## **Revision History** |**Revision History**|| |---|---| |**Date**<br>~~pf~~|**Comment**<br>~~pf~~| |5/13/2014<br>~~pf~~|•Updated ordering information to reflect the End-Of-life (EOL) of the mini-reel option (EOL notice #259)<br>•Updated data sheet based on corporate template.<br>~~pf~~| |5/21/2014<br>~~pf~~|• Updated qual level from"Consumer"to"Industrial"on page 1 & 9.<br>~~pf~~| **IR WORLD HEADQUARTERS:** 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ ## **IMPORTANT NOTICE** The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( **www.infineon.com** ). ## **WARNINGS** Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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