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IRFHM792TRPBF
Dual MOSFET, N Channel, 100 V, 100 V, 4.8 A, 4.8 A, 0.164 ohm
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Dual MOSFETs
- MSL: -
- SVHC: No SVHC (27-Jun-2018)
- No. of Pins: 8Pins
- Channel Type: N Channel
- Product Range: HEXFET Series
- Qualification: -
- Transistor Case Style: PQFN
- Drain Source Voltage Vds: 100V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 4.8A
- Power Dissipation N Channel: 10.4W
- Power Dissipation P Channel: 10.4W
- Drain Source Voltage Vds N Channel: 100V
- Drain Source Voltage Vds P Channel: 100V
- Continuous Drain Current Id N Channel: 4.8A
- Continuous Drain Current Id P Channel: 4.8A
- Drain Source On State Resistance N Channel: 0.164ohm
- Drain Source On State Resistance P Channel: 0.164ohm
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 0.415 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
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**----- Start of picture text -----**<br>
HEXFET ® Power MOSFET<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
VDS 100 V HEXFET<br>Vgs max ± 20 V TOP VIEW<br>53 mm<br>RDS(on) max D D D D<br>195 m Ω 8 7 6 5<br>(@VGS = 10V)<br>H tot H G<br>Q<br>g typ 4.2 nC<br>oe en ia D<br>(@Tc(Bottom ID ) = 25°C) 3.4 A @ S1 G2 @ S3 G4 PQFN Dual 3.3X3.3 mm CasD<br>**----- End of picture text -----**<br>
## **Applications**
- DC-DC Primary Switch
- 48V Battery Monitoring
## **Features and Benefits**
|**Features and Benefits**|||
|---|---|---|
|**Features**||**Benefits**|
|Low RDSon (<195mΩ)||Lower Conduction Losses|
|Low Thermal Resistance to PCB (< 12°C/W)||Enable better thermal dissipation|
|Low Profile (<1.2mm)|results in|Increased Power Density|
|Industry-Standard Pinout|⇒|Multi-VendorCompatibility|
|Compatible with Existing Surface Mount Techniques|Compatible with Existing Surface Mount Techniques|Easier Manufacturing|
|RoHS Compliant Containing no Lead, no Bromide and no Halogen|RoHS Compliant Containing no Lead, no Bromide and no Halogen|Environmentally Friendlier|
|MSL1, Industrial Qualification||Increased Reliability|
|**Orderable part number**|**Package Type**|**Standard Pack**|**Standard Pack**|**Note**|
|---|---|---|---|---|
|||**Form**|**Quantity**||
|IRFHM792TRPBF|PQFN Dual 3.3mm x 3.3mm|Tape and Reel|**Quantity**<br>4000||
|~~IRFHM792TR2PBF~~|~~PQFN Dual 3.3mm x 3.3mm~~|~~Tape and Reel~~|~~400~~|EOL notice # 259|
## **Absolute Maximum Ratings**
||**Parameter**|**Max.**|**Units**|
|---|---|---|---|
|VDS<br>~~a~~|Drain-to-Source Voltage<br>~~a~~|100<br>~~a~~|V<br>~~a~~|
|VGS|Gate-to-Source Voltage|± 20||
|ID@ TA= 25°C<br>~~a~~|Continuous Drain Current,VGS@ 10V<br>~~a~~|2.3<br>~~a~~|A<br>~~a~~<br>~~a~~|
|ID@ TA= 70°C|Continuous Drain Current,VGS@ 10V|1.8||
|ID@ TC(Bottom)= 25°C<br>~~a~~|Continuous Drain Current,VGS@ 10V<br>~~a~~|4.8<br>~~a~~||
|ID@ TC(Bottom)= 100°C<br>~~a~~|Continuous Drain Current,VGS@ 10V<br>~~a~~|3.1<br>~~a~~||
|ID@ TC= 25°C<br>~~a~~<br>~~**a**~~|Continuous Drain Current,VGS@ 10V(Wirebond Limited)<br>~~a~~<br>~~**a**~~|3.4<br>~~a~~||
|IDM<br>~~a~~<br>~~**a**~~|Pulsed Drain Current<br>~~a~~<br>~~**a**~~|14<br>~~a~~||
|PD@TA= 25°C<br>~~**a**~~<br>~~PO~~|Power Dissipation<br>~~**a**~~<br>~~PO~~|2.3<br>|W<br>|
|PD@TC(Bottom)= 25°C<br>~~PO~~|Power Dissipation<br>~~PO~~|10.4<br>||
|~~POGO~~|Linear Derating Factor<br>~~POGO~~|0.018<br>~~GO~~|W/°C<br>~~GO~~|
|TJ<br>TSTG|Linear Derating Factor<br>Operating Junction and<br>Storage Temperature Range|-55 to + 150|°C|
> Notes ~~®~~ through ~~©~~ are on page 9
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**Static @ TJ = 25°C (unless otherwise specified)**
||**Parameter**|**Min.**|**Typ.**|**Max.**|**Units**|**Conditions**|**Conditions**|
|---|---|---|---|---|---|---|---|
|BVDSS|Drain-to-Source Breakdown Voltage|100|–––|–––|V|VGS= 0V, ID= 250μA||
|ΔΒVDSS/ΔTJ|Breakdown Voltage Temp. Coefficient|–––|0.11|–––|V/°C|Reference to 25°C,ID= 1.0mA||
|RDS(on)|Static Drain-to-Source On-Resistance|–––|164|195|mΩ|VGS= 10V,ID= 2.9A�||
|VGS(th)|Gate Threshold Voltage|2.0|3.0|4.0|V|VDS= VGS, ID= 10μA||
|ΔVGS(th)|Gate Threshold Voltage Coefficient|–––|-8.2|–––|mV/°C|||
|IDSS|Drain-to-Source Leakage Current|–––|–––|20|μA|VDS= 100V,VGS= 0V||
|||–––|–––|250|mA|VDS= 100V,VGS= 0V,TJ= 125°C||
|IGSS|Gate-to-Source Forward Leakage|–––|–––|100|nA|VGS= 20V||
||Gate-to-Source Reverse Leakage|–––|–––|-100||VGS= -20V||
|gfs|Forward Transconductance|3.5|–––|–––|S|VDS= 50V,ID= 2.9A||
|Qg|Total Gate Charge|–––|4.2|6.3|nC|VDS= 50V<br>VGS= 10V<br>ID= 2.9A||
|Qgs1|Pre-Vth Gate-to-Source Charge|–––|0.7|–––||||
|Qgs2|Post-Vth Gate-to-Source Charge|–––|0.3|–––||||
|Qgd|Gate-to-Drain Charge|–––|1.3|–––||||
|Qgodr|Gate Charge Overdrive|–––|1.9|–––||||
|Qsw|Switch Charge(Qgs2+ Qgd)|–––|1.6|–––||||
|Qoss|Output Charge|–––|6.7|–––|nC|VDS= 16V,VGS= 0V||
|RG|Gate Resistance|–––|1.6|–––|Ω|||
|td(on)|Turn-On DelayTime|–––|3.4|–––|ns|VDD= 50V, VGS= 10V<br>RG=1.8Ω<br>ID= 2.9A||
|tr|Rise Time|–––|4.7|–––||||
|td(off)|Turn-Off DelayTime|–––|5.2|–––||||
|tf|Fall Time|–––|2.6|–––||||
|Ciss|Input Capacitance|–––|251|–––|pF|VGS= 0V<br>VDS= 25V<br>ƒ= 1.0MHz||
|Coss|Output Capacitance|–––|31|–––||||
|Crss|Reverse Transfer Capacitance|–––|13|–––||||
|**Avalanche Characteristics**||||||||
||**Parameter**||**Typ.**|||**Max.**|**Units**|
|EAS|Single Pulse Avalanche Energy�||–––|||10.2|mJ|
|IAR|Avalanche Current�||–––|||2.9|A|
|**Diode Characteristics**||||||||
||**Parameter**|**Min.**|**Typ.**|**Max.**|**Units**|**Conditions**||
|IS|Continuous Source Current<br>(Body Diode)|–––|–––|3.4�|A|D<br>S<br>G<br>MOSFET symbol<br>showing the<br>integral reverse<br>p-n junction diode.||
|ISM|<br>Pulsed Source Current<br>(Body Diode)��|–––|–––|14||||
|VSD|<br>Diode Forward Voltage|–––|–––|1.3|V|TJ= 25°C,IS= 2.9A,VGS= 0V�<br>||
|trr|Reverse RecoveryTime|–––|15|23|ns|TJ= 25°C, IF= 2.9A, VDD= 50V<br>di/dt = 500A/μs��||
|Qrr|Reverse RecoveryCharge|–––|45|68|nC|||
|ton|Forward Turn-On Time|Time is dominated by parasitic Inductance||||||
## **Thermal Resistance**
||**Parameter**|**Typ.**|**Max.**|**Units**|
|---|---|---|---|---|
|RθJC (Bottom)|Junction-to-Case�|–––|12|°C/W|
|RθJC (Top)|Junction-to-Case�|–––|85||
|RθJA|Junction-to-Ambient�|–––|55||
|RθJA (<10s)|Junction-to-Ambient�|–––|38||
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100<br>VGS<br>TOP 15V<br>10V<br>eet eee<br>8.0V<br>10 6.0V<br>5.0V<br>4.5V<br>4.3V<br>BOTTOM 4.0V<br>1<br>le<br>— ———e<br>0.1<br>4.0V<br>≤ 60μs PULSE WIDTH Tj = 25°C<br>0.01 Te en CELT<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 1. Typical Output Characteristics<br>100<br>SS SS<br>T = 150°C<br>10 a——_fS J Ae<br>TJ = 25°C<br>1<br>py<br>ff V DS = 50V<br>≤ 60μs PULSE WIDTH<br>0.1 |feo} ff<br>2 4 6 8 10 12 14<br>VGS, Gate-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>
**Fig 3.** Typical Transfer Characteristics
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10000<br>VGS = 0V, f = 1 MHZ<br>Ciss = C gs + Cgd, C ds SHORTED<br>C = C<br>rss gd<br>C = C + C<br>1000 oss ds gd<br>J<br>C<br>iss<br>100 SE Coss a<br>Crss<br>10 a el<br>el<br>1<br>1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>C, Capacitance (pF)<br>**----- End of picture text -----**<br>
**Fig 5.** Typical Capacitance vs.Drain-to-Source Voltage
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100<br>VGS<br>TOP 15V<br>10V<br>Semaaiiii maa 8.0V<br>6.0V<br>5.0V<br>4.5V<br>10 4.3V<br>BOTTOM 4.0V<br>aa)ee innit,<br>1 _ GSS<br>4.0V<br>≤ 60μs PULSE WIDTH Tj = 150°C<br>0.1 4a nul<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 2. Typical Output Characteristics<br>2.4<br>2.2 ID = 2.9A Pt ttt ty<br>VGS = 10V<br>2.0<br>1.8 titty<br>1.6 PT TTT TT | yy<br>1.4<br>1.2<br>1.0 eeZ|<br>0.8<br>CREE<br>0.6<br>0.4 mTOEETE EEL ELLEELI<br>-60 -40 -20 0 20 40 60 80 100 120 140 160<br>TJ , Junction Temperature (°C)<br>Fig 4. Normalized On-Resistance vs. Temperature<br>14<br>ID= 2.9A<br>12<br>VDS= 80V<br>10 VDS= 50V SNS<br>VDS= 20V<br>8 A<br>nn Ane<br>6<br>4<br>:<br>20 yV | | ff<br>0 1 2 3 4 5 6<br> QG, Total Gate Charge (nC)<br>ID, Drain-to-Source Current (A)<br>RDS(on) , Drain-to-Source On Resistance (Normalized)<br>VGS, Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>
**Fig 4.** Normalized On-Resistance vs. Temperature
**Fig 6.** Typical Gate Charge vs.Gate-to-Source Voltage
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100<br>ee ee<br>10<br>po | | | Le<br>Ee ee ee) Ae Ae ey A A<br>T = 150°C<br>J<br>T = 25°C<br>1 J<br>po | | ff)<br>V GS = 0V<br>0.1 |pfLepfLeLe ty pe pe<br>0.2 0.4 0.6 0.8 1.0 1.2<br>VSD, Source-to-Drain Voltage (V)<br>ISD, Reverse Drain Current (A)<br>**----- End of picture text -----**<br>
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100 100<br>OPERATION IN THIS AREA LIMITED BY RDS(on)<br>ee ee =fti<br>10 po | | | Le 10 Sete| tt ll<br>100μsec<br>Ee ee ee) Ae Ae ey A A EE ee Le |el<br>T = 150°C<br>J Limited by 1msec<br>T = 25°C Wirebond<br>1 J 1<br>po | | ff) mameJ iimay 1 Ll 10msec S|UN<br>Tc = 25 ° C<br>V GS = 0V Tj = 150°C D C<br>Single Pulse<br>0.1 |pfLepfLeLe ty pe pe 0.1 ReaaE:asi ei:A<br>0.2 0.4 0.6 0.8 1.0 1.2 0.10 1 10 100 1000<br>VSD, Source-to-Drain Voltage (V) VDS, Drain-to-Source Voltage (V)<br> Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area<br>5.2 4.0<br>4.8<br>a PINE<br>4.4 Limited By Wirebond<br>3.5<br>4 Pp HESS<br>3.6 Se 2 ENG SU<br>3.2 eee ee 3.0 PTOSAKA<br>2.8<br>2.4 i TTT ISSUNET<br>2.5 I D = 10μA<br>2 es es ID = 25μA EPSONLTSRN<br>1.6<br>ID = 250μA<br>1.2<br>2.0 ID = 1.0mA<br>0.8<br>> 1 TTT ORNS<br>i<br>0.4<br>0 A 1.5 Ft} tt tt tt<br>25 50 75 100 125 150 -75 -50 -25 0 25 50 75 100 125 150<br> TC , Case Temperature (°C) TJ , Temperature ( °C )<br>Fig 9. Maximum Drain Current vs.<br>Fig 10. Threshold Voltage vs. Temperature<br>Case (Bottom) Temperature<br>100<br>10 ee<br>D = 0.50<br>— 0.20 re} tH a<br>0.10<br>1<br>0.05<br>Se Sores ail ell<br>0.02<br>0.01<br>Tet<br>0.1 a|<br>SINGLE PULSE Notes:<br>( THERMAL RESPONSE ) 1. Duty Factor D = t1/t2<br>| 2. Peak Tj = P dm x Zthjc + Tc il<br>0.01<br>1E-006 1E-005 0.0001 0.001 0.01 0.1<br>t1 , Rectangular Pulse Duration (sec)<br>ID, Drain-to-Source Current (A)<br>ID, Drain Current (A)<br>VGS(th), Gate threshold Voltage (V)<br>Thermal Response ( Z thJC ) °C/W<br>**----- End of picture text -----**<br>
**Fig 7.** Typical Source-Drain Diode Forward Voltage
**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom)
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400 45<br>I<br>ID = 2.9A 40 D<br>350 TT H+ TOP 0.43A<br>35 0.98A<br>BOTTOM 2.90A<br>CEE<br>300 eal 30 Naa<br>25<br>T = 125°C<br>250 aE J<br>20<br>200 | 15 KINSCENEPt ET<br>10<br>150<br>pr tC OR 5 SE<br>[> T = 25°C pe NT<br>J<br>100 PF 0 CCLCESSSSO<br>5 10 15 20 25 50 75 100 125 150<br>Starting TJ , Junction Temperature (°C)<br>VGS, Gate -to -Source Voltage (V)<br>) Ω<br>RDS(on), Drain-to -Source On Resistance (m<br>EAS , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>
**Fig 12.** On-Resistance vs. Gate Voltage
**Fig 13.** Maximum Avalanche Energy vs. Drain Current
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15V<br>VDS L DRIVER<br>RG D.U.T +<br>- [V][DD]<br>IAS<br>ge 20V Jt<br>tp 0.01 Ω<br>**----- End of picture text -----**<br>
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V(BR)DSS<br><< tp —><br>/<br>/ |<br>fil<br>IAS<br>**----- End of picture text -----**<br>
**Fig 14a.** Unclamped Inductive Test Circuit
**Fig 14b.** Unclamped Inductive Waveforms
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-<br>≤ 1<br>≤ 0.1<br>**----- End of picture text -----**<br>
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V<br>DS<br>90% a<br>10%<br>V<br>GS i | ——ae)<br>td(on) tr td(off) tf<br>**----- End of picture text -----**<br>
**Fig 15a.** Switching Time Test Circuit
**Fig 15b.** Switching Time Waveforms
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**----- Start of picture text -----**<br>
Driver Gate Drive<br>P.W.<br>D.U.T + { P.W. + Period ——— + D = —— Period<br>) [©)] • Circuit Layout Considerations ) V | t GS=10<br>| — - • GroundLow StrayPlane Inductance<br> • CurrentLow LeakageTransformerInductance 2) D.U.T. ISD Waveform<br>+<br>Reverse<br>@ - a | = - ® + RecoveryCurrent r Body Diode ForwardCurrent di/dt /\ ——<br>©) D.U.T. VDS Waveform Diode Recoverydv/dt ‘ '<br>00 we VDD<br>iv<br>• Re-Applied<br>• Driver same type as D.U.T. + Voltage Body Diode Forward Drop<br>Ro (4 • dv/dt controlledIsp controlled by byDuty Rg Factor "D" Vp p - @) Inductor Curent<br>•<br>D.U.T. - Device Under Test Ripple ≤ 5% e s ISD ee<br>**----- End of picture text -----**<br>
## **Fig 16.** Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET ® Power MOSFETs
**==> picture [227 x 50] intentionally omitted <==**
**----- Start of picture text -----**<br>
L<br>VCC<br>DUT<br>0<br>1K S<br>**----- End of picture text -----**<br>
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Id<br>Vds i<br>Vgs<br>I<br>1<br>i)<br>1<br>1<br>1<br>'<br>Vgs(th) 1H [1] 1<br>H11 [1] !i)<br>1 i)<br>| \<br>1 i '<br>Qgs1 Qgs2 Qgd Qgodr<br>**----- End of picture text -----**<br>
**Fig 17.** Gate Charge Test Circuit
**Fig 18.** Gate Charge Waveform
## **PQFN Dual 3.3x3.3 Package Details**
http://www.irf.com/technical-info/appnotes/an-1154.pdf
## **PQFN Dual 3.3x3.3 Part Marking**
**Note: For the most current drawing please refer to IR website at:** http://www.irf.com/package/
## **PQFN Dual 3.3x3.3 Tape and Reel**
**Note: For the most current drawing please refer to IR website at:** http://www.irf.com/package/
## **Qualification information**[†]
|**Qualification information**[†]|||
|---|---|---|
|Qualification level|Industrial<br>††<br>(per JEDEC JES D47F<br>†††guidelines)||
|Moisture Sensitivity Level|PQFN Dual 3.3mm x 3.3mm|MS L1<br>(per JEDEC J-S T D-020D<br>†††)|
|RoHS compliant|Yes||
- T Qualification standards can be found at International Rectifier’s web site http://www.irf.com/product-info/reliability
- Ho Higher qualification ratings may be available should the user have such requirements.
Please contact your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ Ht Applicable version of JEDEC standard at the time of product release.
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 2.43mH, RG = 50 Ω , IAS = 2.9A.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
R θ is measured at TJ of approximately 90°C.
When mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of FR-4 material.
Calculated continuous current based on maximum allowable junction temperature. Package is limited to 3.4A by wirebond capability.
## **Revision History**
|**Date**<br>**Revision History**|**Comments**<br>**Revision History**|
|---|---|
|12/16/2013|•Updated ordering information to reflect the End-Of-life (EOL) of the mini-reel option (EOL notice #259)<br>• Updated data sheet with new IR corporate template|
**IR WORLD HEADQUARTERS:** 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/
## **IMPORTANT NOTICE**
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) .
With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( **www.infineon.com** ).
## **WARNINGS**
Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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