IRFD9120PBF

Power MOSFET, P Channel, 100 V, 1 A, 0.6 ohm, DIP, Through Hole

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Manufacturer: VISHAY
Product type: Single MOSFETs
Transistor Polarity:P Channel; Continuous Drain Current Id:1A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.6ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-4V; Power Dissipation Pd:1
MSL: -
SVHC: No SVHC (21-Jan-2025)
No. of Pins: 4Pins
Channel Type: P Channel
Product Range: -
Qualification: -
Power Dissipation: 1.3W
Transistor Mounting: Through Hole
Rds(on) Test Voltage: 10V
Transistor Case Style: DIP
Drain Source Voltage Vds: 100V
Operating Temperature Max: 175°C
Continuous Drain Current Id: 1A
Drain Source On State Resistance: 0.6ohm
Gate Source Threshold Voltage Max: 4V

Delivery and price
Units per pack	1000
Price	0.551 €
Current stock	1000+
Lead time	7 days

Datasheet

**IRFD9120** 

Vishay Siliconix 

www.vishay.com 

## **Power MOSFET** 

**==> picture [186 x 111] intentionally omitted <==**

**----- Start of picture text -----**<br>
S<br>HVMDIP<br>G<br>S<br>G<br>D D<br>P-Channel MOSFET<br>**----- End of picture text -----**<br>


|**PRODUCT SUMMARY**|**PRODUCT SUMMARY**|**PRODUCT SUMMARY**|
|---|---|---|
|VDS(V)|-100||
|RDS(on)(Ω)|VGS= -10 V|0.60|
|Qgmax. (nC)|18||
|Qgs(nC)|3.0||
|Qgd(nC)|9.0||
|Configuration|Single||



## **FEATURES** 

- Dynamic dv/dt rating 

- Repetitive avalanche rated 

- For automatic Insertion 

- End stackable 

- P-channel 

- 175 °C operating temperature 

- Fast switching 

- Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 

## **DESCRIPTION** 

Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. 

The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple combinations on standard 0.1" pin centers. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1 W. 

|**ORDERING INFORMATION**|**ORDERING INFORMATION**|
|---|---|
|Package|HVMDIP|
|Lead (Pb)-free|IRFD9120PbF|



|**ABSOLUTE MAXIMUM RATINGS**(TA= 25 °C,unless otherwise noted)|**ABSOLUTE MAXIMUM RATINGS**(TA= 25 °C,unless otherwise noted)|**ABSOLUTE MAXIMUM RATINGS**(TA= 25 °C,unless otherwise noted)|**ABSOLUTE MAXIMUM RATINGS**(TA= 25 °C,unless otherwise noted)|||
|---|---|---|---|---|---|
|**PARAMETER**|||**SYMBOL**|**LIMIT**|**UNIT**|
|Drain-source voltage|||VDS|-100|V|
|Gate-source voltage|||VGS|± 20||
|Continuous drain current|VGSat -10 V|TA= 25 °C|ID|-1.0|A|
|||TA= 100 °C||-0.70||
|Pulsed drain currenta|||IDM|-8.0||
|Linear deratingfactor||||0.0083|W/°C|
|Single pulse avalanche energyb|||EAS|140|mJ|
|Repetitive avalanche currenta|||IAR|-1.0|A|
|Repetitive avalanche energya|||EAR|0.13|mJ|
|Maximum power dissipation|TA=|25 °C|PD|1.3|W|
|Peak diode recovery dv/dtc|||dv/dt|-5.5|V/ns|
|Operatingjunction and storage temperature range|||TJ, Tstg|-55 to +175|°C|
|SolderingrRecommendations (peak temperature)d|For|10 s||300||



|**ABSOLUTE MAXIMUM RATINGS**(TA= 25 °C,unless otherwise noted)|**ABSOLUTE MAXIMUM RATINGS**(TA= 25 °C,unless otherwise noted)|**ABSOLUTE MAXIMUM RATINGS**(TA= 25 °C,unless otherwise noted)|**ABSOLUTE MAXIMUM RATINGS**(TA= 25 °C,unless otherwise noted)|||
|---|---|---|---|---|---|
|**PARAMETER**|||**SYMBOL**|**LIMIT**|**UNIT**|
|Drain-source voltage|||VDS|-100|V|
|Gate-source voltage|||VGS|± 20||
|Continuous drain current|VGSat -10 V|TA= 25 °C|ID|-1.0|A|
|||TA= 100 °C||-0.70||
|Pulsed drain currenta|||IDM|-8.0||
|Linear deratingfactor||||0.0083|W/°C|
|Single pulse avalanche energyb|||EAS|140|mJ|
|Repetitive avalanche currenta|||IAR|-1.0|A|
|Repetitive avalanche energya|||EAR|0.13|mJ|
|Maximum power dissipation|TA=|25 °C|PD|1.3|W|
|Peak diode recovery dv/dtc|||dv/dt|-5.5|V/ns|
|Operatingjunction and storage temperature range|||TJ, Tstg|-55 to +175|°C|
|SolderingrRecommendations (peak temperature)d|For|10 s||300||



## **Notes** 

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) 

b. VDD = -25 V, starting TJ = 25 °C, L = 52 mH, Rg = 25 Ω, IAS = -2.0 A (see fig. 12) 

c. ISD ≤ -6.8 A, di/dt ≤ 110 A/μs, VDD ≤ VDS, TJ ≤ 175 °C 

- d. 1.6 mm from case 

S21-0887-Rev. F, 30-Aug-2021 

Document Number: 91139 

**1** 

For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**IRFD9120** 

www.vishay.com 

Vishay Siliconix 

## **THERMAL RESISTANCE RATINGS** 

|**THERMAL RESISTANCE RATINGS**|**THERMAL RESISTANCE RATINGS**|**THERMAL RESISTANCE RATINGS**|**THERMAL RESISTANCE RATINGS**|**THERMAL RESISTANCE RATINGS**|
|---|---|---|---|---|
|**PARAMETER**|**SYMBOL**|**TYP.**|**MAX.**|**UNIT**|
|Maximum junction-to-ambient|RthJA|-|120|°C/W|



|**SPECIFICATIONS**(TJ= 25 °C, unless otherwise noted)|**SPECIFICATIONS**(TJ= 25 °C, unless otherwise noted)|**SPECIFICATIONS**(TJ= 25 °C, unless otherwise noted)|**SPECIFICATIONS**(TJ= 25 °C, unless otherwise noted)|||||
|---|---|---|---|---|---|---|---|
|**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**||**MIN.**|**TYP.**|**MAX.**|**UNIT**|
|**Static**||||||||
|Drain-source breakdown voltage|VDS|VGS= 0 V, ID= -250 μA||-100|-|-|V|
|VDStemperature coefficient|ΔVDS/TJ|Reference to 25 °C, ID= -1 mA||-|-0.10|-|V/°C|
|Gate-source threshold voltage|VGS(th)|VDS= VGS, ID= -250 μA||-2.0|-|-4.0|V|
|Gate-source leakage|IGSS|VGS= ± 20 V||-|-|± 100|nA|
|Zero gate voltage drain current|IDSS|VDS= -100 V, VGS= 0 V||-|-|-100|μA|
|||VDS= -80 V, VGS= 0 V, TJ= 150 °C||-|-|-500||
|Drain-source on-state resistance|RDS(on)|VGS= -10 V|ID= -0.6 Ab|-|-|0.60|Ω|
|Forward transconductance|gfs|VDS= -50 V, ID= -0.60 Ab||0.71|-|-|S|
|**Dynamic**||||||||
|Input capacitance|Ciss|VGS= 0 V<br>VDS= -25 V<br>f = 1.0 MHz, see fig. 5||-|390|-|pF|
|Output capacitance|Coss|||-|170|-||
|Reverse transfer capacitance|Crss|||-|45|-||
|Totalgate charge|Qg|VGS= -10 V|ID= -6.8 A, VDS= -80 V<br>see fig. 6 and 13b|-|-|18|nC|
|Gate-source charge|Qgs|||-|-|3.0||
|Turn-on delay time|Qgd|||-|-|9.0||
|Rise time|td(on)|VDD= -50 V, ID= -6.8 A<br>Rg= 18Ω, RD= 7.1Ω, see fig. 10b||-|9.6|-|ns|
|Turn-off delay time|tr|||-|29|-||
|Fall time|td(off)|||-|21|-||
|Turn-on delay time|tf|||-|25|-||
|Internal drain inductance|LD|Between lead,<br>6 mm (0.25") from<br>package and center of<br>die contact<br>D<br>S<br>G||-|4.0|-|nH|
|Internal source inductance|LS|||-|6.0|-||
|**Drain-Source Body Diode Characteristics**||||||||
|Continuous source-drain diode current|IS|MOSFET symbol<br>showing the<br>integral reverse<br>p - n junction diode<br>S<br>D<br>G||-|-|-1.0|A|
|Pulsed diode forward currenta|ISM|||-|-|-8.0||
|Body diode voltage|VSD|TJ= 25 °C, IS= -1.0 A, VGS= 0 Vb||-|-|-6.3|V|
|Body diode reverse recovery time|trr|TJ= 25 °C, IF= -6.8 A, di/dt = 100 A/μsb||-|98|200|ns|
|Body diode reverse recovery charge|Qrr|||-|0.33|0.66|μC|
|Forward turn-on time|ton|Intrinsic turn-on time is negligible (turn-on is dominated by LSand LD)||||||



## **Notes** 

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) 

b. Pulse width ≤ 300 μs; duty cycle ≤ 2 % 

S21-0887-Rev. F, 30-Aug-2021 

Document Number: 91139 

**2** 

For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**IRFD9120** Vishay Siliconix 

## www.vishay.com 

## **TYPICAL CHARACTERISTICS** (25 °C, unless otherwise noted) 

**==> picture [31 x 6] intentionally omitted <==**

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TA = 25 °C<br>**----- End of picture text -----**<br>


**Fig. 1 - Typical Output Characteristics, TA = 25 °C** 

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 Fig. 3 - Typical Transfer Characteristics<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
TA = 175 °C<br>alee el<br>**----- End of picture text -----**<br>


**Fig. 2 - Typical Output Characteristics, TA = 175 °C** 

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**----- Start of picture text -----**<br>
 Fig. 4 - Normalized On-Resistance vs. Temperature<br>**----- End of picture text -----**<br>


S21-0887-Rev. F, 30-Aug-2021 

Document Number: 91139 

**3** For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**IRFD9120** 

Vishay Siliconix 

## www.vishay.com 

**Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage** 

**Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage** 

**Fig. 7 - Typical Source-Drain Diode Forward Voltage** 

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**----- Start of picture text -----**<br>
TA = 25 °C<br>TJ = 175 °C<br>SINGLE PULSE<br>PLT<br>8 ye 8 ig 2 8 gee<br>-Vpg, Drain-to-Source Voltage (volts)<br> Fig. 8 - Maximum Safe Operating Area<br>**----- End of picture text -----**<br>


S21-0887-Rev. F, 30-Aug-2021 

Document Number: 91139 

**4** For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**IRFD9120** 

**==> picture [77 x 10] intentionally omitted <==**

**----- Start of picture text -----**<br>
www.vishay.com<br>**----- End of picture text -----**<br>


## Vishay Siliconix 

**==> picture [185 x 140] intentionally omitted <==**

**----- Start of picture text -----**<br>
0.6 Pit tT |INMELLE<br>PIT SN<br>Pi tiE T TE T IENL TNEE|<br>“CETTEETLN |<br>25 50 756 400 4125 150<br>0.0 PTT TA  TEEPE , Ambient Temperature (°C)<br>, Drain Current (A)<br>ID<br>**----- End of picture text -----**<br>


**Fig. 9 - Maximum Drain Current vs. Ambient Temperature** 

**==> picture [147 x 122] intentionally omitted <==**

**----- Start of picture text -----**<br>
RD<br>VDS<br>VGS<br>D.U.T.<br>R<br>g +- VDD<br>- 10 V<br>Pulse width ≤ 1 µs<br>Duty factor ≤ 0.1 %<br>Fig. 10a - Switching Time Test Circuit<br>:<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
td(on) tr td(off) tf<br>VGS<br>10 % \ /<br>90 %VDS X\/<br>**----- End of picture text -----**<br>


**Fig. 10b - Switching Time Waveforms** 

**==> picture [8 x 96] intentionally omitted <==**

**----- Start of picture text -----**<br>
)thJA<br>Thermal Response (Z<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
t1, Rectangular Pulse Duration (s)<br>**----- End of picture text -----**<br>


**Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Ambient** 

S21-0887-Rev. F, 30-Aug-2021 

Document Number: 91139 

**5** For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**IRFD9120** ~~a~~ Vishay Siliconix 

www.vishay.com 

**==> picture [212 x 105] intentionally omitted <==**

**----- Start of picture text -----**<br>
L<br>VDS “ 0 0<br>Vary tp to obtain '~<br>required IAS 4<br>R G \ D.U.T.<br>+ [-] [V] DD<br>VV<br>IAS<br>t - 10 V LU<br>tp 0.01 Ω<br>a ie -<br>**----- End of picture text -----**<br>


**==> picture [154 x 105] intentionally omitted <==**

**----- Start of picture text -----**<br>
IAS —_—- -——-<br>\ |<br>\ |<br>VDS<br>\ |<br>SEN\ VDD<br>t<br>p<br>ae<br>VDS<br>**----- End of picture text -----**<br>


**Fig. 12a - Unclamped Inductive Test Circuit** 

**Fig. 12b - Unclamped Inductive Waveforms** 

**Fig. 12c - Maximum Avalanche Energy vs. Drain Current** 

**==> picture [415 x 147] intentionally omitted <==**

**----- Start of picture text -----**<br>
Current regulator<br>Same type as D.U.T.<br>50 kΩ<br>QG<br>- 10 V 12 V 0.2 µF<br>0.3 µF<br>QGS QGD D.U.T. +- VDS<br>VG VGS<br>——— -_&<br>- 3 mA<br>Charge<br>IG ID<br>Current sampling resistors<br>**----- End of picture text -----**<br>


**Fig. 13a - Basic Gate Charge Waveform** 

**Fig. 13b - Gate Charge Test Circuit** 

S21-0887-Rev. F, 30-Aug-2021 

Document Number: 91139 

**6** For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**IRFD9120** 

Vishay Siliconix 

**==> picture [77 x 10] intentionally omitted <==**

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www.vishay.com<br>**----- End of picture text -----**<br>


## **Peak Diode Recovery dV/dt Test Circuit** 

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**----- Start of picture text -----**<br>
D.U.T.<br>+<br>Circuit layout considerations<br>• Low stray inductance<br>• Ground plane<br>• Low leakage inductance<br>current transformer<br>-<br>+<br>-<br>Rg • dV/dt controlled by Rg +<br>• • ID.U.T. - device under testSD controlled by duty factor “D” - VDD<br>Note<br>• Compliment N-Channel of D.U.T. for driver<br>- +<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Driver gate drive<br>P.W.<br>Period D =<br>P.W. Period<br>VGS = - 10 V [a]<br>D.U.T. lSD waveform<br>Reverse<br>recovery Body diode forward<br>current current<br>dI/dt<br>D.U.T. VDS waveform<br>Diode recovery<br>dV/dt<br>VDD<br>Re-applied<br>voltage<br>Body diode forward drop<br>Inductor current<br>Ripple ≤ 5 % ISD<br>Note<br>a. VGS = - 5 V for logic level and - 3 V drive devices<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Fig. 14 - For P-Channel<br>**----- End of picture text -----**<br>


_Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91139._ 

Document Number: 91139 

S21-0887-Rev. F, 30-Aug-2021 

**7** 

For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**Package Information** 

**==> picture [59 x 48] intentionally omitted <==**

## Vishay Siliconix 

## **HVM DIP** (High voltage) 

**==> picture [376 x 290] intentionally omitted <==**

**----- Start of picture text -----**<br>
0.248 [6.29]<br>0.240 [6.10]<br>0.043 [1.09] 0.197 [5.00]<br>0.035 [0.89] 0.133 [3.37] 0.189 [4.80]<br>0.125 [3.18]<br>0.180 [4.57]<br>0.160 [4.06]<br>0.094 [2.38] A L<br>0.086 [2.18]<br>0.160 [4.06]<br>0.140 [3.56]<br>0° to 15°<br>0.017 [0.43]     2 x 0.045 [1.14]<br>0.013 [0.33] 2 x 0.035 [0.89] 0.024 [0.60]<br>4 x<br>E min. 0.020 [0.51]<br>0.100 [2.54] typ.<br>E max.<br>**----- End of picture text -----**<br>


||**INCHES**|**INCHES**|**MILLIMETERS**|**MILLIMETERS**|
|---|---|---|---|---|
|**DIM.**|**MIN.**|**MAX.**|**MIN.**|**MAX.**|
|A|0.310|0.330|7.87|8.38|
|E|0.300|0.425|7.62|10.79|
|L|0.270|0.290|6.86|7.36|
|ECN: X10-0386-Rev. B, 06-Sep-10<br>DWG: 5974|||||



## **Note** 

1. Package length does not include mold flash, protrusions or gate burrs. Package width does not include interlead flash or protrusions. 

Document Number: 91361 Revision: 06-Sep-10 

www.vishay.com 1 

**Legal Disclaimer Notice** Vishay 

www.vishay.com 

## **Disclaimer** 

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. 

Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer's technical experts. Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein. 

Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of any of the products, services or opinions of the corporation, organization or individual associated with the third-party website. Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website or for that of subsequent links. 

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. 

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. 

_**© 2021 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED**_ 

Revision: 09-Jul-2021 

Document Number: 91000 

**1**

Updated at March 14, 2026

Vishay is a global leader in the manufacturing of discrete semiconductors and passive electronic components. Renowned for its exceptional quality and engineering expertise, the company produces highly reliable solutions that drive innovation across the industrial, automotive, telecommunications, and consumer electronics markets. From advanced factory automation to vehicle electrification, Vishay components provide the foundational building blocks for modern electronic design. The company's expansive portfolio is heavily focused on efficient power management, signal routing, and energy storage. Within its passive component lineup, Vishay is recognized for its extensive array of high-performance capacitors, including robust aluminium electrolytic, film, and polymer variants, alongside highly efficient power inductors. In the realm of discrete semiconductors, Vishay is a premier manufacturer of single and dual MOSFETs, as well as a vast selection of Schottky, Zener, and fast-recovery rectifier diodes designed for demanding power applications. Furthermore, Vishay delivers industry-leading circuit protection and thermal management solutions. With a broad offering of transient voltage suppressors (TVS diodes) and temperature-sensing NTC thermistors, these components are engineered to safeguard sensitive circuitry against both electrical and thermal overstress. By combining this vital mix of advanced discretes and passives, Vishay enables engineers to develop robust, space-saving, and highly resilient electronic systems.

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