IRFBF20STRLPBF

**IRFBF20S, SiHFBF20S, IRFBF20L, SiHFBF20L** 

Vishay Siliconix 

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VISHAY, —<br>Vv www.vishay.com<br>D<br>I [2] PAK (TO-262) D [2] PAK (TO-263)<br>G G<br>D<br>G [DS] S<br>S<br>N-Channel MOSFET<br>**----- End of picture text -----**<br>


## **Power MOSFET** 

## **FEATURES** 

- Surface-mount (IRFBF20S, SiHFBF20S) 

- Low-profile through-hole (IRFBF20L, SiHFBF20L) 

- Available in tape and reel (IRFBF20S, SiHFBF20S) 

- Dynamic dV/dt rating 

Available Available 

- 150 °C operating temperature 

- Fast switching 

- Fully avalanche rated 

- Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 

**Note** 

* This    datasheet    provides    information    about    parts    that    are RoHS-compliant and / or parts that are non RoHS-compliant.  For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details 

## **DESCRIPTION** 

|**PRODUCT SUMMARY**|**PRODUCT SUMMARY**|**PRODUCT SUMMARY**|
|---|---|---|
|VDS(V)|900||
|RDS(on)()|VGS= 10 V|8.0|
|Qgmax. (nC)|38||
|Qgs(nC)|4.7||
|Qgd(nC)|21||
|Configuration|Single||



Third generation power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. 

The D[2] PAK is a surface-mount power package capable of the accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface-mount package. The D[2] PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface-mount application. The through-hole version (IRFBF20L, SiHFBF20L) is available for low-profile applications. 

|**ORDERING INFORMATION**|**ORDERING INFORMATION**|**ORDERING INFORMATION**|**ORDERING INFORMATION**|**ORDERING INFORMATION**|
|---|---|---|---|---|
|Package|D2PAK (TO-263)|D2PAK (TO-263)|D2PAK (TO-263)|I2PAK (TO-262)|
|Lead (Pb)-free and Halogen-free|SiHFBF20S-GE3|SiHFBF20STRL-GE3a|SiHFBF20STRR-GE3a|SiHFBF20L-GE3|
|Lead (Pb)-free|IRFBF20SPbF|IRFBF20STRLPbFa|IRFBF20STRRPbFa|IRFBF20LPbF|



**Note** a. See device orientation 

|**ABSOLUTE MAXIMUM RATINGS**(TC= 25 °C,unless otherwise noted)<br>~~PC~~|**ABSOLUTE MAXIMUM RATINGS**(TC= 25 °C,unless otherwise noted)<br>~~PC~~|**ABSOLUTE MAXIMUM RATINGS**(TC= 25 °C,unless otherwise noted)<br>~~PC~~|**ABSOLUTE MAXIMUM RATINGS**(TC= 25 °C,unless otherwise noted)<br>~~PC~~|**ABSOLUTE MAXIMUM RATINGS**(TC= 25 °C,unless otherwise noted)<br>~~PC~~|**ABSOLUTE MAXIMUM RATINGS**(TC= 25 °C,unless otherwise noted)<br>~~PC~~|
|---|---|---|---|---|---|
|**PARAMETER**<br>~~ee~~|||**SYMBOL**<br>~~ee~~|**LIMIT**<br>~~ee~~|**UNIT**<br>~~ee~~|
|Drain-source voltagee<br>~~ee~~|||VDS<br>~~ee~~|900<br>~~ee~~|V<br>~~ee~~|
|Gate-source voltagee<br>~~a~~<br>~~|~~<br>~~po~~|||VGS<br>~~Pp~~|± 20<br>~~Pp~~||
|Continuous drain current<br>~~a~~<br>~~po~~|VGSat 10 V<br>~~a~~<br>~~|~~|TC= 25 °C<br>~~|~~|ID<br>~~Pp~~|1.7<br>~~Pp~~|A|
|||TC= 100 °C<br>~~|~~||1.1<br>~~Pp~~||
|Pulsed drain currenta, e<br>~~po~~|||IDM|6.8||
|Linear deratingfactor<br>~~po~~<br>~~a~~|||~~a~~|0.43<br>~~a~~|W/°C<br>~~a~~|
|Singlepulse avalanche energy b, e<br>~~a~~|||EAS<br>~~a~~<br>~~G~~|180<br>~~a~~<br>~~G~~|mJ<br>~~a~~|
|Repetitive avalanche currenta<br>~~a~~<br>~~a~~|||IAR<br>~~a~~<br>~~a~~<br>~~G~~|1.7<br>~~a~~<br>~~a~~<br>~~G~~|A<br>~~a~~<br>~~a~~|
|Repetitive avalanche energy a<br>~~Pp~~|||EAR<br>~~G~~<br>~~Pp~~|5.4<br>~~G~~<br>~~Pp~~|mJ|
|Maximum power dissipation<br>~~Pp~~<br>~~ee~~|TC= 25 °C<br>~~Pp~~<br>~~ee~~||PD<br>~~Pp~~<br>~~ee~~|54<br>~~Pp~~<br>~~ee~~|W<br>~~ee~~|
||TA= 25 °C<br>~~Pp~~<br>~~ee~~|||3.1<br>~~Pp~~<br>~~ee~~||
|Peak diode recoverydV/dtc, e<br>~~a~~|||dV/dt<br>~~a~~|1.5<br>~~a~~|V/ns<br>~~a~~|
|Operating junction and storage temperature range<br>~~a~~|||TJ, Tstg<br>~~a~~|-55 to +150<br>~~a~~|°C<br>~~a~~<br>~~a~~|
|Solderingrecommendations(peak temperature) d<br>~~a~~|for 10 s<br>~~a~~||~~a~~<br>~~G~~|300<br>~~a~~<br>~~G~~||
|Mountingtorque<br>~~a~~|6-32 or M3 screw<br>~~a~~||~~a~~<br>~~G~~|10<br>~~a~~<br>~~G~~|N<br>~~a~~|



a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) b. VDD = 50 V; starting TJ = 25 °C, L = 117 mH, Rg = 25  , IAS = 1.7 A (see fig. 12) c. ISD  1.7 A, dI/dt  70 A/μs, VDD  VDS, TJ  150 °C d. 1.6 mm from case 

e. Uses IRFBF20, SiHFBF20 data and test conditions 

S20-0238-Rev. C, 13-Apr-2020 

**1** For technical questions, contact: hvm@vishay.com 

Document Number: 91121 

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**IRFBF20S, SiHFBF20S, IRFBF20L, SiHFBF20L** 

**==> picture [59 x 48] intentionally omitted <==**

www.vishay.com 

## Vishay Siliconix 

|**THERMAL RESISTANCE RATINGS**|**THERMAL RESISTANCE RATINGS**|**THERMAL RESISTANCE RATINGS**|**THERMAL RESISTANCE RATINGS**|**THERMAL RESISTANCE RATINGS**|
|---|---|---|---|---|
|**PARAMETER**|**SYMBOL**|**TYP.**|**MAX.**|**UNIT**|
|Maximum junction-to-ambient (PCB<br>mounted, steady-state)a|RthJA|-|40|°C/W|
|Maximum junction-to-case|RthJC|-|2.3||



## **Note** 

a. When mounted on 1" square PCB (FR-4 or G-10 material) 

|**SPECIFICATIONS**(TJ= 25 °C, unless otherwise noted)|**SPECIFICATIONS**(TJ= 25 °C, unless otherwise noted)|**SPECIFICATIONS**(TJ= 25 °C, unless otherwise noted)|**SPECIFICATIONS**(TJ= 25 °C, unless otherwise noted)|||||
|---|---|---|---|---|---|---|---|
|**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**||**MIN.**|**TYP.**|**MAX.**|**UNIT**|
|**Static**||||||||
|Drain-source breakdown voltage|VDS|VGS= 0, ID= 250 μA||900|-|-|V|
|VDStemperature coefficient|VDS/TJ|Reference to 25 °C, ID= 1 mA||-|1.1|-|mV/°C|
|Gate-source threshold voltage|VGS(th)|VDS= VGS, ID= 250 μA||2.0|-|4.0|V|
|Gate-source leakage|IGSS|VGS= ± 20 V||-|-|± 100|nA|
|Zero gate voltage drain current|IDSS|VDS= 900 V, VGS= 0 V||-|-|100|μA|
|||VDS= 720 V, VGS= 0 V, TJ= 125 °C||-|-|500||
|Drain-source on-state resistance|RDS(on)|VGS= 10 V|ID= 1.0 Ab|-|-|8.0||
|Forward transconductance|gfs|VDS= 50 V, ID= 1.0 Ab||0.6|-|-|S|
|**Dynamic**||||||||
|Input capacitance|Ciss|VGS= 0 V,<br>VDS= 25 V,<br>f = 1.0 MHz, see fig. 5||-|490|-|pF|
|Output capacitance|Coss|||-|55|-||
|Reverse transfer capacitance|Crss|||-|18|-||
|Totalgate charge|Qg|VGS= 10 V|ID= 1.7 A, VDS= 360 V,<br>see fig. 6 and 13b|-|-|38|nC|
|Gate-source charge|Qgs|||-|-|4.7||
|Gate-drain charge|Qgd|||-|-|21||
|Turn-on delay time|td(on)|VDD= 450 V, ID= 1.7 A,<br>Rg= 18, VGS= 10 V, see fig. 10b||-|8.0|-|ns|
|Rise time|tr|||-|21|-||
|Turn-off delay time|td(off)|||-|56|-||
|Fall time|tf|||-|32|-||
|Gate input resistance|Rg|f = 1 MHz, open drain||0.6|-|3.4||
|**Drain-Source Body Diode Characteristics**||||||||
|Continuous source-drain diode current|IS|MOSFET symbol<br>showing the<br>integral reverse<br>p - n junction diode<br>S<br>D<br>G||-|-|1.7|A|
|Pulsed diode forward currenta|ISM|||-|-|6.8||
|Body diode voltage|VSD|TJ= 25 °C, IS= 1.7 A, VGS= 0 Vb||-|-|1.5|V|
|Body diode reverse recovery time|trr|TJ= 25 °C, IF= 1.7 A, dI/dt = 100 A/μsb||-|350|530|ns|
|Body diode reverse recovery charge|Qrr|||-|0.85|1.3|μC|
|Forward turn-on time|ton|Intrinsic turn-on time is negligible (turn-on is dominated by LSand LD)||||||



## **Notes** 

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) 

b. Pulse width  300 μs; duty cycle  2 % 

c. Uses IRFBF20/SiHFBF20 data and test conditions 

S20-0238-Rev. C, 13-Apr-2020 

Document Number: 91121 

**2** 

For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**IRFBF20S, SiHFBF20S, IRFBF20L, SiHFBF20L** Vishay Siliconix 

## www.vishay.com 

## **TYPICAL CHARACTERISTICS** (25 °C, unless otherwise noted) 

**Fig. 1 - Typical Output Characteristics** 

**Fig. 4 - Normalized On-Resistance vs. Temperature** 

**Fig. 2 - Typical Output Characteristics** 

**Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage** 

**Fig. 3 - Typical Transfer Characteristics** 

**Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage** 

Document Number: 91121 

S20-0238-Rev. C, 13-Apr-2020 

**3** For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**IRFBF20S, SiHFBF20S, IRFBF20L, SiHFBF20L** 

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## Vishay Siliconix 

## **TYPICAL CHARACTERISTICS** (25 °C, unless otherwise noted) 

**Fig. 7 - Typical Source-Drain Diode Forward Voltage** Vsp, Source-ta-Drain Voltage (volts) 

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RD<br>VDS<br>VGS<br>D.U.T.<br>R<br>g +- VDD<br>10 V<br>Pulse width ≤ 1 µs<br>Duty factor ≤ 0.1 %<br> Fig. 10a - Switching Time Test Circuit !<br>VDS<br>90 % Y<br>|<br>1<br>1<br>1<br>10 % \ MV/\ 1 |<br>VGS 1Pep a s ! i} NAaN<br>td(on) tr td(off) tf<br>**----- End of picture text -----**<br>


**Fig. 11 - Switching Time Waveforms** 

**Fig. 8 - Maximum Safe Operating Area** 

**Fig. 9 - Maximum Drain Current vs. Case Temperature** 

S20-0238-Rev. C, 13-Apr-2020 

Document Number: 91121 

**4** For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**IRFBF20S, SiHFBF20S, IRFBF20L, SiHFBF20L** 

www.vishay.com 

## Vishay Siliconix 

## **TYPICAL CHARACTERISTICS** (25 °C, unless otherwise noted) 

**Fig. 12 - Maximum Effective Transient Thermal Impedance, Junction-to-Case** 

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L<br>VDS<br>Vary tp to obtain<br>required IAS<br>Rg D.U.T. +<br>- [V][DD]<br>WAY,<br>IAS<br>10 V JL<br>a e<br>tp 0.01 Ω<br>**----- End of picture text -----**<br>


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VDS<br>t<br>~ p<br>VDD<br>/<br>VDS /\\ J<br>y \<br>/ \<br>IAS LL<br>**----- End of picture text -----**<br>


**Fig. 12a - Unclamped Inductive Test Circuit** 

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Fig. 12b - Unclamped Inductive Waveforms<br>**----- End of picture text -----**<br>


**Fig. 12c - Maximum Avalanche Energy vs. Drain Current** 

S20-0238-Rev. C, 13-Apr-2020 

Document Number: 91121 

**5** For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**IRFBF20S, SiHFBF20S, IRFBF20L, SiHFBF20L** 

**==> picture [59 x 48] intentionally omitted <==**

www.vishay.com 

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QG<br>10 V<br>QGS QGD<br>VG<br>Charge<br>**----- End of picture text -----**<br>


**Fig. 13a - Basic Gate Charge Waveform** 

## Vishay Siliconix 

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**----- Start of picture text -----**<br>
Current regulator<br>Same type as D.U.T.<br>50 kΩ<br>12 V 0.2 µF<br>0.3 µF<br>+<br>D.U.T. - VDS<br>VGS<br>3 mA<br>IG ID<br>Current sampling resistors<br>**----- End of picture text -----**<br>


**Fig. 13b - Gate Charge Test Circuit** 

S20-0238-Rev. C, 13-Apr-2020 

Document Number: 91121 

**6** For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**IRFBF20S, SiHFBF20S, IRFBF20L, SiHFBF20L** 

Vishay Siliconix 

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www.vishay.com<br>**----- End of picture text -----**<br>


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Peak Diode Recovery dV/dt Test Circuit<br>**----- End of picture text -----**<br>


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+ Circuit layout considerations<br>D.U.T.<br>•  Low stray inductance<br>•  Ground plane<br>•  Low leakage inductance<br>current transformer<br>-<br>+<br>- - +<br>Rg •  dV/dt controlled by Rg +<br>••   Driver same type as D.U.T.ISD controlled by duty factor “D” - VDD<br>•  D.U.T. - device under test<br>Driver gate drive<br>P.W.<br>Period D =<br>P.W. Period<br>VGS = 10 V [a]<br>D.U.T. lSD waveform<br>Reverse<br>recovery Body diode forward<br>current current dI/dt<br>D.U.T. VDS waveform Diode recovery<br>dV/dt<br>VDD<br>Re-applied<br>voltage<br>Body diode forward drop<br>Inductor current<br>Ripple ≤ 5 % ISD<br>Note<br>a. VGS = 5 V for logic level devices<br>**----- End of picture text -----**<br>


**Fig. 14 - For N-Channel** 

_Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91121._ 

S20-0238-Rev. C, 13-Apr-2020 

Document Number: 91121 

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For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**Package Information** 

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## Vishay Siliconix 

## **TO-263AB (HIGH VOLTAGE)** 

|L1<br>L2<br>D<br>4<br>(Datum A|L1<br>L2<br>D<br>4<br>(Datum A|L1<br>L2<br>D<br><br>(Datum A|L1<br>L2<br>D<br><br>(Datum A|)|3<br>|4|4|4|4|4|4|4|4|4|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
||||||E<br><br>||||||||||
||||1||4||||||||||
||||D||1<br>2<br>C|3<br><br>C|||||||||
||||2||**B**<br>e||||||||||
|||||**B**|||||||||||
|||||2 x|||||||||||
||||||||||||||||
||||||||||||||||
||||||||||||||||
|||||Lead tip||||Section B - B and C - C<br>Scale: none|||||||
||||||||||||||||
||||**MILLIMETERS**||||**INCHES**<br>**MIN.**<br>**MAX.**<br>0.160<br>0.190<br>0.000<br>0.010<br>0.020<br>0.039<br>0.020<br>0.035<br>0.045<br>0.070<br>0.045<br>0.068<br>0.015<br>0.029<br>0.015<br>0.023<br>0.045<br>0.065<br>0.330<br>0.380||||**MILLIMETERS**||**INCHES**||
|**DIM.**|**MIN.**||||**MA**|**X.**|**MIN.**|||**DIM.**|**MIN.**|**MAX.**|**MIN.**|**MAX.**|
|A|4.06||||4.8|3|0.160|||D1|6.86|-|0.270|-|
|A1|0.00||||0.2|5|0.000|||E|9.65|10.67|0.380|0.420|
|b|0.51||||0.9|9|0.020|||E1|6.22|-|0.245|-|
|b1|0.51||||0.8|9|0.020|||e|2.54 BSC||0.100 BSC||
|b2|1.14||||1.7|8|0.045|||H|14.61|15.88|0.575|0.625|
|b3|1.14||||1.7|3|0.045|||L|1.78|2.79|0.070|0.110|
|c|0.38||||0.7|4|0.015|||L1|-|1.65|-|0.066|
|c1|0.38||||0.5|8|0.015|||L2|-|1.78|-|0.070|
|c2|1.14||||1.6|5|0.045|||L3|0.25 BSC||0.010 BSC||
|D|8.38||||9.6|5|0.330|||L4|4.78|5.28|0.188|0.208|
|ECN: S-82110-Rev. A, 15-Sep-08<br>DWG: 5970|||||||||||||||



ECN: S-82110-Rev. A, 15-Sep-08 DWG: 5970 

## **Notes** 

1. Dimensioning and tolerancing per ASME Y14.5M-1994. 

2. Dimensions are shown in millimeters (inches). 

3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body at datum A. 

4. Thermal PAD contour optional within dimension E, L1, D1 and E1. 

5. Dimension b1 and c1 apply to base metal only. 

6. Datum A and B to be determined at datum plane H. 

7. Outline conforms to JEDEC outline to TO-263AB. 

Document Number: 91364 Revision: 15-Sep-08 

www.vishay.com 

1 

**Package Information** 

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## Vishay Siliconix 

## **I[2] PAK (TO-262) (HIGH VOLTAGE)** 

**==> picture [357 x 358] intentionally omitted <==**

**----- Start of picture text -----**<br>
(Datum A) A B<br>E A c2 E<br>A<br>L1<br>Seating D1<br>plane<br>D<br>C C<br>L2<br>B B L<br>A<br>3 x b2 c E1<br>3 x b A1 Section A - A<br>2 x e Base<br>metal<br>Plating b1, b3<br>0.010 M A M B<br>c c1<br>(b, b2)<br>Lead tip<br>**----- End of picture text -----**<br>


Section B - B and C - C Scale: None 

|||||||Section B - B and C - C<br>Scale: None|Section B - B and C - C<br>Scale: None|||
|---|---|---|---|---|---|---|---|---|---|
||**MILLIMETERS**|**INCHES**||||**MILLIMETERS**||**INCHES**||
|**DIM.**|**MIN.**<br>**MAX**|**.**<br>**MIN.**|**MAX.**||**DIM.**|**MIN.**|**MAX.**|**MIN.**|**MAX.**|
|A|4.06<br>4.83|0.160|0.190||D|8.38|9.65|0.330|0.380|
|A1|2.03<br>3.02|0.080|0.119||D1|6.86|-|0.270|-|
|b|0.51<br>0.99|0.020|0.039||E|9.65|10.67|0.380|0.420|
|b1|0.51<br>0.89|0.020|0.035||E1|6.22|-|0.245|-|
|b2|1.14<br>1.78|0.045|0.070||e|2.54 BSC||0.100 BSC||
|b3|1.14<br>1.73|0.045|0.068||L|13.46|14.10|0.530|0.555|
|c|0.38<br>0.74|0.015|0.029||L1|-|1.65|-|0.065|
|c1|0.38<br>0.58|0.015|0.023||L2|3.56|3.71|0.140|0.146|
|c2|1.14<br>1.65|0.045|0.065|||||||
|ECN: S-82442-Rev. A, 27-Oct-08<br>DWG: 5977||||||||||



ECN: S-82442-Rev. A, 27-Oct-08 DWG: 5977 

## **Notes** 

1. Dimensioning and tolerancing per ASME Y14.5M-1994. 

2. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm per side. These dimensions are measured at the outmost extremes of the plastic body. 

3. Thermal pad contour optional within dimension E, L1, D1, and E1. 

4. Dimension b1 and c1 apply to base metal only. 

Document Number: 91367 Revision: 27-Oct-08 

www.vishay.com 1 

**AN826** 

## **Vishay Siliconix** 

## RECOMMENDED MINIMUM PADS FOR D[2] PAK:  3-Lead 

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0.420<br>(10.668)<br>mil<br>0.145<br>(3.683)<br>0.135<br>(3.429)<br>0.200 0.050<br>| rt<br>— (5.080) (1.257)<br>Recommended Minimum Pads<br>Dimensions in Inches/(mm)<br>0.355 (9.017)<br>0.635<br>(16.129)<br>**----- End of picture text -----**<br>


Return to Index 

Document Number:   73397 11-Apr-05 

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**Legal Disclaimer Notice** Vishay 

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## **Disclaimer** 

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product.  To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. 

Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications.  Such statements are not binding statements about the suitability of products for a particular application.  It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time.  All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts.  Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. 

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. 

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay.  Product names and markings noted herein may be trademarks of their respective owners. 

_**© 2019 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED**_ 

Revision: 01-Jan-2019 

Document Number: 91000 

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