IRFBF20SPBF.

## **IRFBF20S, SiHFBF20S, IRFBF20L, SiHFBF20L** 

## Vishay Siliconix 

## **Power MOSFET** 

|**PRODUCT SUMMARY**|**PRODUCT SUMMARY**|**PRODUCT SUMMARY**|
|---|---|---|
|VDS(V)|900||
|RDS(on)()|VGS= 10 V|8.0|
|DS(on)()<br>Qg(Max.) (nC)|GS<br>38||
|Qgs(nC)|4.7||
|Qgd(nC)|21||
|Configuration|Single||



D 

**I[2] PAK (TO-262) D[2] PAK (TO-263)** G G D 9% S ~~:~~ S N-Channel MOSFET 

## **FEATURES** 

- **Halogen-free According to IEC 61249-2-21 Definition** 

- Surface Mount (IRFBF20S, SiHFBF20S) 

- Low-Profile Through-Hole (IRFBF20L, SiHFBF20L) 

- Available in Tape and Reel (IRFBF20S, SiHFBF20S) 

- Dynamic dV/dt Rating 

- 150 °C Operating Temperature 

- Fast Switching 

- Fully Avalanche Rated 

- Compliant to RoHS Directive 2002/95/EC 

## **DESCRIPTION** 

Third generation Power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. 

The D[2] PAK is a surface mount power package capabel of the accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D[2] PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. The through-hole version (IRFBF20L, SiHFBF20L) is available for low-profile applications. 

|**ORDERING INFORMATION**|**ORDERING INFORMATION**|**ORDERING INFORMATION**|**ORDERING INFORMATION**|**ORDERING INFORMATION**|
|---|---|---|---|---|
|Package|D2PAK(TO-263)|D2PAK(TO-263)|D2PAK(TO-263)|I2PAK(TO-262)|
|Lead(Pb)-free and Halogen-free|SiHFBF20S-GE3|SiHFBF20STRL-GE3a|SiHFBF20STRR-GE3a|SiHFBF20L-GE3|
|Lead (Pb)-free|IRFBF20SPbF|IRFBF20STRLPbFa|IRFBF20STRRPbFa|IRFBF20LPbF|
||SiHFBF20S-E3|SiHFBF20STL-E3a|SiHFBF20STR-E3a|SiHFBF20L-E3|



## **Note** 

a. See device orientation. 

|**ABSOLUTE MAXIMUM RATINGS**(TC= 25 °C,unless otherwise noted)<br>~~pT~~|**ABSOLUTE MAXIMUM RATINGS**(TC= 25 °C,unless otherwise noted)<br>~~pT~~|**ABSOLUTE MAXIMUM RATINGS**(TC= 25 °C,unless otherwise noted)<br>~~pT~~|**ABSOLUTE MAXIMUM RATINGS**(TC= 25 °C,unless otherwise noted)<br>~~pT~~|**ABSOLUTE MAXIMUM RATINGS**(TC= 25 °C,unless otherwise noted)<br>~~pT~~|**ABSOLUTE MAXIMUM RATINGS**(TC= 25 °C,unless otherwise noted)<br>~~pT~~|
|---|---|---|---|---|---|
|**PARAMETER**<br>~~a~~|||**SYMBOL**<br>~~a~~|**LIMIT**<br>~~a~~|**UNIT**<br>~~a~~|
|Drain-Source Voltagee<br>~~a~~|||VDS<br>~~a~~|900<br>~~a~~|V<br>~~a~~|
|Gate-Source Voltagee<br>~~a~~<br>~~ee~~|||VGS<br>~~a~~<br>~~ee~~|± 20<br>~~a~~<br>~~ee~~||
|Continuous Drain Current<br>~~ee~~|VGSat 10 V|TC= 25 °C|ID<br>~~ee~~|1.7<br>~~ee~~|A<br>~~a~~|
|||TC= 100 °C||1.1<br>~~ee~~||
|Pulsed Drain Currenta,e<br>~~ee~~<br>~~a~~|||IDM<br>~~ee~~<br>~~a~~|6.8<br>~~ee~~<br>~~a~~||
|Linear DeratingFactor<br>~~ee~~<br>~~a~~|||~~ee~~<br>~~a~~|0.43<br>~~ee~~<br>~~a~~|W/°C<br>~~a~~|
|Single Pulse Avalanche Energyb, e<br>~~a~~<br>~~SO~~|||EAS<br>~~a~~<br>~~SO~~|180<br>~~a~~<br>~~SO~~|mJ<br>~~a~~<br>~~SO~~|
|Repetitive Avalanche Currenta<br>~~a~~|||IAR<br>~~a~~|1.7<br>~~a~~|A<br>~~a~~|
|Repetitive Avalanche Energya<br>~~a~~<br>~~a~~<br>~~ees~~|||EAR<br>~~a~~<br>~~a~~<br>~~eee~~|5.4<br>~~a~~<br>~~a~~<br>~~eee~~|mJ<br>~~a~~<br>~~a~~|
|Maximum Power Dissipation<br>~~a~~<br>~~ne~~|TC= 25 °C<br>~~a~~<br>~~ne~~<br>~~ees~~||PD<br>~~a~~<br>~~ne~~<br>~~eee~~|54<br>~~a~~<br>~~ne~~<br>~~eee~~|W<br>~~a~~<br>~~ne~~|
||TA= 25 °C<br>~~ne~~<br>~~ees~~|||3.1<br>~~ne~~<br>~~eee~~||
|Peak Diode RecoverydV/dtc, e<br>~~ne~~<br>~~ees~~<br>~~OO~~|||dV/dt<br>~~ne~~<br>~~eee~~<br>~~OO~~|1.5<br>~~ne~~<br>~~eee~~<br>~~OO~~|V/ns<br>~~ne~~<br>~~OO~~|
|OperatingJunction and Storage Temperature Range<br>~~el~~|||TJ,Tstg<br>~~el~~|- 55 to + 150<br>~~el~~|°C<br>~~el~~|
|SolderingRecommendations(Peak Temperature)<br>~~el~~|for 10 s<br>~~el~~||~~el~~|300d<br>~~el~~||
|MountingTorque<br>~~el~~<br>~~OC~~|6-32 or M3 screw<br>~~el~~<br>~~OC~~||~~el~~<br>~~OC~~|10<br>~~el~~<br>~~OC~~|N<br>~~el~~<br>~~OC~~|



a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). 

- b. VDD = 50 V; starting TJ = 25 °C, L = 117 mH, Rg = 25  , IAS = 1.7 A (see fig. 12). 

- c. ISD  1.7 A, dI/dt  70 A/μs, VDD  VDS, TJ  150 °C. 

- d. 1.6 mm from case. 

- e. Uses IRFBF20, SiHFBF20 data and test conditions. 

* Pb containing terminations are not RoHS compliant, exemptions may apply 

www.vishay.com 1 

Document Number: 91121 S11-1053-Rev. B, 30-May-11 

This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

## **IRFBF20S, SiHFBF20S, IRFBF20L, SiHFBF20L** 

## Vishay Siliconix 

**==> picture [59 x 48] intentionally omitted <==**

|**THERMAL RESISTANCE RATINGS**|**THERMAL RESISTANCE RATINGS**|**THERMAL RESISTANCE RATINGS**|**THERMAL RESISTANCE RATINGS**|**THERMAL RESISTANCE RATINGS**|
|---|---|---|---|---|
|**PARAMETER**|**SYMBOL**|**TYP.**|**MAX.**|**UNIT**|
|Maximum Junction-to-Ambient (PCB<br>Mounted, steady-state)a|RthJA|-|40|°C/W|
|Maximum Junction-to-Case|RthJC|-|2.3||



## **Note** 

a. When mounted on 1" square PCB ( FR-4 or G-10 material). 

|**SPECIFICATIONS**(TJ= 25 °C, unless otherwise noted)|**SPECIFICATIONS**(TJ= 25 °C, unless otherwise noted)|**SPECIFICATIONS**(TJ= 25 °C, unless otherwise noted)|**SPECIFICATIONS**(TJ= 25 °C, unless otherwise noted)|||||
|---|---|---|---|---|---|---|---|
|**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**||**MIN.**|**TYP.**|**MAX.**|**UNIT**|
|**Static**||||||||
|Drain-Source Breakdown Voltage|VDS|VGS= 0, ID= 250 μA||900|-|-|V|
|VDSTemperature Coefficient|VDS/TJ|Reference to 25 °C, ID= 1 mA||-|1.1|-|mV/°C|
|Gate-Source Threshold Voltage|VGS(th)|VDS= VGS, ID= 250 μA||2.0|-|4.0|V|
|Gate-Source Leakage|IGSS|VGS= ± 20 V||-|-|± 100|nA|
|Zero Gate Voltage Drain Current|IDSS|VDS= 900 V, VGS= 0 V||-|-|100|μA|
|||VDS= 720 V, VGS= 0 V, TJ= 125 °C||-|-|500||
|Drain-Source On-State Resistance|RDS(on)|VGS= 10 V|ID= 1.0 Ab|-|-|8.0||
|Forward Transconductance|gfs|VDS= 50 V, ID= 1.0 Ab||0.6|-|-|S|
|**Dynamic**||||||||
|Input Capacitance|Ciss|VGS= 0 V,<br>VDS= 25 V,<br>f = 1.0 MHz, see fig. 5||-|490|-|pF|
|Output Capacitance|Coss|||-|55|-||
|Reverse Transfer Capacitance|Crss|||-|18|-||
|Total Gate Charge|Qg|VGS= 10 V|ID= 1.7 A, VDS= 360 V,<br>see fig. 6 and 13b|-|-|38|nC|
|Gate-Source Charge|Qgs|||-|-|4.7||
|Gate-Drain Charge|Qgd|||-|-|21||
|Turn-On Delay Time|td(on)|VDD= 450 V, ID= 1.7 A,<br>Rg= 18, VGS= 10 V, see fig. 10b||-|8.0|-|ns|
|Rise Time|tr|||-|21|-||
|Turn-Off Delay Time|td(off)|||-|56|-||
|Fall Time|tf|||-|32|-||



www.vishay.com 2 

Document Number: 91121 S11-1053-Rev. B, 30-May-11 

This document is subject to change without notice. 

> THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**IRFBF20S, SiHFBF20S, IRFBF20L, SiHFBF20L** 

## Vishay Siliconix 

|**SPECIFICATIONS**(TJ= 25 °C,unless otherwise noted)|**SPECIFICATIONS**(TJ= 25 °C,unless otherwise noted)|**SPECIFICATIONS**(TJ= 25 °C,unless otherwise noted)|**SPECIFICATIONS**(TJ= 25 °C,unless otherwise noted)|**SPECIFICATIONS**(TJ= 25 °C,unless otherwise noted)|**SPECIFICATIONS**(TJ= 25 °C,unless otherwise noted)|**SPECIFICATIONS**(TJ= 25 °C,unless otherwise noted)|
|---|---|---|---|---|---|---|
|**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**|**MIN.**|**TYP.**|**MAX.**|**UNIT**|
|**Drain-Source Body Diode Characteristics**|||||||
|Continuous Source-Drain Diode Current|IS|MOSFET symbol<br>showing the<br>integral reverse<br>p - n junction diode<br>S<br>D<br>G|-|-|1.7|A|
|Pulsed Diode Forward Currenta|ISM||-|-|6.8||
|Body Diode Voltage|VSD|TJ= 25 °C, IS= 1.7 A, VGS= 0 Vb|-|-|1.5|V|
|Body Diode Reverse Recovery Time|trr|TJ= 25 °C, IF= 1.7 A, dI/dt = 100 A/μsb|-|350|530|ns|
|Body Diode Reverse Recovery Charge|Qrr||-|0.85|1.3|μC|
|Forward Turn-On Time|ton|Intrinsic turn-on time is negligible (turn-on is dominated by LSand LD)|||||



## **Notes** 

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). 

- b. Pulse width  300 μs; duty cycle  2 %. 

c. Uses IRFBF20/SiHFBF20 data and test conditions. 

## **TYPICAL CHARACTERISTICS** (25 °C, unless otherwise noted) 

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**----- Start of picture text -----**<br>
Fig. 1 - Typical Output Characteristics<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Fig. 2 - Typical Output Characteristics<br>**----- End of picture text -----**<br>


Document Number: 91121 S11-1053-Rev. B, 30-May-11 

www.vishay.com 3 

This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

> **IRFBF20S** ~~So~~ **, SiHFBF20S, IRFBF20L, SiHFBF20L** Vishay Siliconix 

**Fig. 3 - Typical Transfer Characteristics** 

**Fig. 4 - Normalized On-Resistance vs. Temperature** 

**Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage** 

**Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage** 

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Document Number: 91121 S11-1053-Rev. B, 30-May-11 

This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**IRFBF20S, SiHFBF20S, IRFBF20L, SiHFBF20L** 

Vishay Siliconix 

**Fig. 7 - Typical Source-Drain Diode Forward Voltage** 

**Fig. 8 - Maximum Safe Operating Area** 

**Fig. 9 - Maximum Drain Current vs. Case Temperature** 

**==> picture [148 x 228] intentionally omitted <==**

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RD<br>VDS<br>VGS<br>D.U.T.<br>R<br>g +- VDD<br>10 V<br>Pulse width ≤ 1 µs<br>Duty factor ≤ 0.1 %<br>=<br>Fig. 10a - Switching Time Test Circuit<br>VDS<br>90 % V<br>!\<br>10 % [\_|<br>VGS<br>r t f d(on) te tr \_. f t o d(off) le tf<br>**----- End of picture text -----**<br>


**Fig. 10b - Switching Time Waveforms** 

Document Number: 91121 S11-1053-Rev. B, 30-May-11 

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This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

## **IRFBF20S** ~~CNS,’~~ **, SiHFBF20S, IRFBF20L, SiHFBF20L** Vishay Siliconix 

**Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case** 

**==> picture [455 x 128] intentionally omitted <==**

**----- Start of picture text -----**<br>
L<br>VDS VDS<br>Vary tp to obtain t<br>required IAS /*— p a al VDD<br>Rg D.U.T. +<br>VV IAS - [V][DD] VDS // \\\ “4<br>10 V<br>t Jt // \\<br>tp 0.01 Ω IAS _~_e LHe<br>Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms<br>**----- End of picture text -----**<br>


**Fig. 12c - Maximum Avalanche Energy vs. Drain Current** 

www.vishay.com 6 

Document Number: 91121 S11-1053-Rev. B, 30-May-11 

This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**IRFBF20S, SiHFBF20S, IRFBF20L, SiHFBF20L** 

**==> picture [59 x 48] intentionally omitted <==**

## Vishay Siliconix 

**==> picture [415 x 148] intentionally omitted <==**

**----- Start of picture text -----**<br>
Current regulator<br>Same type as D.U.T.<br>QG 50 kΩ<br>10 V 12 V 0.2 µF<br>0.3 µF<br>QGS QGD +<br>D.U.T. - VDS<br>VG VGS<br>3 mA<br>Charge<br>IG ID<br>Current sampling resistors<br>**----- End of picture text -----**<br>


## **Fig. 13a - Basic Gate Charge Waveform** 

**Fig. 13b - Gate Charge Test Circuit** 

**==> picture [214 x 371] intentionally omitted <==**

**----- Start of picture text -----**<br>
Peak Diode Recovery dV/dt Test Circuit<br>D.U.T. + Circuit layout considerations•  Low stray inductance<br>•  Ground plane<br>•  Low leakage inductance<br>current transformer<br>-<br>+<br>- - +<br>Rg •  dV/dt controlled by Rg +<br>• •  Driver same type as D.U.T.ISD controlled by duty factor “D” - VDD<br>•  D.U.T. - device under test<br>Driver gate drive<br>P.W. Period D = PeriodP.W.<br>VGS = 10 V [a]<br>D.U.T. lSD waveform<br>Reverse<br>recovery Body diode forward<br>current current dI/dt<br>D.U.T. VDS waveform Diode recovery<br>dV/dt<br>VDD<br>Re-applied<br>voltage<br>Inductor current Body diode forward drop<br>Ripple ≤ 5 % ISD<br>Note<br>a. VGS = 5 V for logic level devices<br>**----- End of picture text -----**<br>


**Fig. 14 - For N-Channel** 

_Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91121._ 

Document Number: 91121 S11-1053-Rev. B, 30-May-11 

www.vishay.com 7 

This document is subject to change without notice. 

> THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**Package Information** 

**==> picture [60 x 50] intentionally omitted <==**

## Vishay Siliconix 

## **TO-263AB (HIGH VOLTAGE)** 

|L1<br>L2<br>D<br>4<br>(Datum A|L1<br>L2<br>D<br>4<br>(Datum A|L1<br>L2<br>D<br><br>(Datum A|L1<br>L2<br>D<br><br>(Datum A|)|3<br>|4|4|4|4|4|4|4|4|4|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
||||||E<br><br>||||||||||
||||1||4||||||||||
||||D||1<br>2<br>C|3<br><br>C|||||||||
||||2||**B**<br>e||||||||||
|||||**B**|||||||||||
|||||2 x|||||||||||
||||||||||||||||
||||||||||||||||
||||||||||||||||
|||||Lead tip||||Section B - B and C - C<br>Scale: none|||||||
||||||||||||||||
||||**MILLIMETERS**||||**INCHES**<br>**MIN.**<br>**MAX.**<br>0.160<br>0.190<br>0.000<br>0.010<br>0.020<br>0.039<br>0.020<br>0.035<br>0.045<br>0.070<br>0.045<br>0.068<br>0.015<br>0.029<br>0.015<br>0.023<br>0.045<br>0.065<br>0.330<br>0.380||||**MILLIMETERS**||**INCHES**||
|**DIM.**|**MIN.**||||**MA**|**X.**|**MIN.**|||**DIM.**|**MIN.**|**MAX.**|**MIN.**|**MAX.**|
|A|4.06||||4.8|3|0.160|||D1|6.86|-|0.270|-|
|A1|0.00||||0.2|5|0.000|||E|9.65|10.67|0.380|0.420|
|b|0.51||||0.9|9|0.020|||E1|6.22|-|0.245|-|
|b1|0.51||||0.8|9|0.020|||e|2.54 BSC||0.100 BSC||
|b2|1.14||||1.7|8|0.045|||H|14.61|15.88|0.575|0.625|
|b3|1.14||||1.7|3|0.045|||L|1.78|2.79|0.070|0.110|
|c|0.38||||0.7|4|0.015|||L1|-|1.65|-|0.066|
|c1|0.38||||0.5|8|0.015|||L2|-|1.78|-|0.070|
|c2|1.14||||1.6|5|0.045|||L3|0.25 BSC||0.010 BSC||
|D|8.38||||9.6|5|0.330|||L4|4.78|5.28|0.188|0.208|
|ECN: S-82110-Rev. A, 15-Sep-08<br>DWG: 5970|||||||||||||||



ECN: S-82110-Rev. A, 15-Sep-08 DWG: 5970 

## **Notes** 

1. Dimensioning and tolerancing per ASME Y14.5M-1994. 

2. Dimensions are shown in millimeters (inches). 

3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body at datum A. 

4. Thermal PAD contour optional within dimension E, L1, D1 and E1. 

5. Dimension b1 and c1 apply to base metal only. 

6. Datum A and B to be determined at datum plane H. 

7. Outline conforms to JEDEC outline to TO-263AB. 

Document Number: 91364 Revision: 15-Sep-08 

www.vishay.com 

1 

**AN826** 

## **Vishay Siliconix** 

## RECOMMENDED MINIMUM PADS FOR D[2] PAK:  3-Lead 

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**----- Start of picture text -----**<br>
0.420<br>(10.668)<br>mil<br>0.145<br>(3.683)<br>0.135<br>(3.429)<br>0.200 0.050<br>| rt<br>— (5.080) (1.257)<br>Recommended Minimum Pads<br>Dimensions in Inches/(mm)<br>0.355 (9.017)<br>0.635<br>(16.129)<br>**----- End of picture text -----**<br>


Return to Index 

Document Number:   73397 11-Apr-05 

www.vishay.com 

**1** 

**Legal Disclaimer Notice** Vishay 

www.vishay.com 

**==> picture [59 x 48] intentionally omitted <==**

## **Disclaimer** 

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product.  To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. 

Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications.  Such statements are not binding statements about the suitability of products for a particular application.  It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application.  Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time.  All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. 

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.  Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. 

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay.  Product names and markings noted herein may be trademarks of their respective owners. 

## **Material Category Policy** 

**Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant.** 

**Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.** 

**Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards.  Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition.  We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards.** 

Revision: 02-Oct-12 

Document Number: 91000 

**1**