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IRFBE30PBF
Power MOSFET, N Channel, 800 V, 4.1 A, 3 ohm, TO-220AB, Through Hole
⚠️ Given the current worldwide supply chain situation, we kindly ask you to take the information shown as a guideline.
- Manufacturer: VISHAY
- Product type: Single MOSFETs
- Transistor Polarity:N Channel; Continuous Drain Current Id:4.1A; Drain Source Voltage Vds:800V; On Resistance Rds(on):3ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dis
- MSL: -
- SVHC: Lead (21-Jan-2025)
- No. of Pins: 3Pins
- Channel Type: N Channel
- Product Range: -
- Qualification: -
- Power Dissipation: 125W
- Transistor Mounting: Through Hole
- Rds(on) Test Voltage: 10V
- Transistor Case Style: TO-220AB
- Drain Source Voltage Vds: 800V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 4.1A
- Drain Source On State Resistance: 3ohm
- Gate Source Threshold Voltage Max: 4V
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.7 € |
| Current stock | 1000+ |
| Lead time | 7 days |
Datasheet
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Updated at March 27, 2026