IRF9Z30PBF

**IRF9Z30** 

Vishay Siliconix 

www.vishay.com 

## **Power MOSFET** 

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S<br>TO-220AB<br>G<br>S<br>, D “8<br>G D<br>P-Channel MOSFET<br>**----- End of picture text -----**<br>


|**PRODUCT SUMMARY**|**PRODUCT SUMMARY**|**PRODUCT SUMMARY**|
|---|---|---|
|VDS(V)|-50||
|RDS(on)(Ω)|VGS= -10 V|0.14|
|Qgmax. (nC)|39||
|Qgs(nC)|10||
|Qgd(nC)|15||
|Configuration|Single||



## **FEATURES** 

• P-channel versatility • Compact plastic package Available • Fast switching Available • Low drive current • Ease of paralleling • Excellent temperature stability • Material categorization: for definitions of compliance RoHS 

- Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 

- **Note** 

- This    datasheet    provides    information    about    parts    that    are RoHS-compliant and / or parts that are non RoHS-compliant.  For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details 

## **DESCRIPTION** 

The power MOSFET technology is the key to Vishay’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of the power MOSFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. 

The p-channel power MOSFET’s are designed for application which require the convenience of reverse polarity operation. They retain all of the features of the more common n-channel Power MOSFET’s such as voltage control, very fast switching, ease of paralleling, and excellent temperature stability. 

P-channel power MOSFETs are intended for use in power stages where complementary symmetry with n-channel devices offers circuit simplification. They are also very useful in drive stages because of the circuit versatility offered by the reverse polarity connection. Applications include motor control, audio amplifiers, switched mode converters, control circuits and pulse amplifiers. 

|**ORDERING INFORMATION**||
|---|---|
|Package|TO-220AB|
|Lead (Pb)-free|IRF9Z30PbF|
|Lead (Pb)-free and halogen-free|IRF9Z30PbF-BE3|



|**ABSOLUTE MAXIMUM RATINGS**(TC= 25 °C, unless otherwise noted)<br>~~Cn~~|**ABSOLUTE MAXIMUM RATINGS**(TC= 25 °C, unless otherwise noted)<br>~~Cn~~|**ABSOLUTE MAXIMUM RATINGS**(TC= 25 °C, unless otherwise noted)<br>~~Cn~~|**ABSOLUTE MAXIMUM RATINGS**(TC= 25 °C, unless otherwise noted)<br>~~Cn~~|**ABSOLUTE MAXIMUM RATINGS**(TC= 25 °C, unless otherwise noted)<br>~~Cn~~|**ABSOLUTE MAXIMUM RATINGS**(TC= 25 °C, unless otherwise noted)<br>~~Cn~~|
|---|---|---|---|---|---|
|**PARAMETER**<br>~~Cn~~<br>~~a~~|||**SYMBOL**<br>~~a~~|**LIMIT**<br>~~a~~|**UNIT**<br>~~a~~|
|Drain-source voltage<br>~~oe~~|||VDS<br>~~oe~~|-50<br>~~oe~~|V<br>~~oe~~<br>~~ee~~|
|Gate-source voltage<br>~~oe~~<br>~~|~~<br>~~ee~~<br>~~ee~~|||VGS<br>~~oe~~<br>~~P~~<br>~~ee~~|± 20<br>~~oe~~<br>~~P~~<br>~~ee~~||
|Continuous drain current<br>~~re~~|VGSat -10 V<br>~~|~~<br>~~re~~<br>~~ee~~|TC= 25 °C<br>~~|~~<br>~~re~~<br>~~ee~~|ID<br>~~P~~<br>~~re~~<br>~~ee~~|-18<br>~~P~~<br>~~re~~<br>~~ee~~|A<br>~~re~~<br>~~ee~~<br>~~a~~|
|||TC= 100 °C<br>~~|~~<br>~~re~~<br>~~ee~~||-11<br>~~P~~<br>~~re~~<br>~~ee~~||
|Pulsed drain currenta<br>~~re~~<br>~~ee~~<br>~~ee~~<br>~~a~~|||IDM<br>~~re~~<br>~~ee~~<br>~~a~~|-60<br>~~re~~<br>~~ee~~<br>~~a~~||
|Linear deratingfactor<br>~~re~~<br>~~ee~~<br>~~ee~~<br>~~a~~<br>~~a~~|||~~re~~<br>~~ee~~<br>~~a~~<br>~~a~~|0.59<br>~~re~~<br>~~ee~~<br>~~a~~<br>~~a~~|W/°C<br>~~re~~<br>~~ee~~<br>~~a~~<br>~~a~~|
|Inductive current, clamped<br>~~a~~<br>~~a~~|L = 100 μH<br>~~a~~<br>~~a~~||ILM<br>~~a~~<br>~~a~~|-60<br>~~a~~<br>~~a~~|A<br>~~a~~<br>~~a~~|
|Unclamped inductive current (avalanche current)<br>~~a~~<br>~~a~~|||IL<br>~~a~~<br>~~a~~|-3.1<br>~~a~~<br>~~a~~|A<br>~~a~~<br>~~a~~|
|Maximum power dissipation<br>~~a~~<br>~~Se~~|TC= 25 °C<br>~~a~~||PD<br>~~a~~|74<br>~~a~~|W<br>~~a~~|
|Operating junction and storage temperature range<br>~~Se~~|||TJ, Tstg|-55 to +150|°C|
|Solderingrecommendations (peak temperature)c<br>~~Se~~|For 10 s|||300||



S21-1262-Rev. B, 27-Dec-2021 

**1** For technical questions, contact: hvm@vishay.com 

Document Number: 91459 

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**IRF9Z30** 

www.vishay.com 

Vishay Siliconix 

## **THERMAL RESISTANCE RATINGS** 

|**THERMAL RESISTANCE RATINGS**|**THERMAL RESISTANCE RATINGS**|**THERMAL RESISTANCE RATINGS**|**THERMAL RESISTANCE RATINGS**|**THERMAL RESISTANCE RATINGS**|
|---|---|---|---|---|
|**PARAMETER**|**SYMBOL**|**TYP.**|**MAX.**|**UNIT**|
|Maximum junction-to-ambient|RthJA|-|80|°C/W|
|Maximum junction-to-case (drain)|RthJC|-|1.7||



|**SPECIFICATIONS**(TJ= 25 °C, unless otherwise noted)|**SPECIFICATIONS**(TJ= 25 °C, unless otherwise noted)|**SPECIFICATIONS**(TJ= 25 °C, unless otherwise noted)|**SPECIFICATIONS**(TJ= 25 °C, unless otherwise noted)|||||
|---|---|---|---|---|---|---|---|
|**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**||**MIN.**|**TYP.**|**MAX.**|**UNIT**|
|**Static**||||||||
|Drain-source breakdown voltage|VDS|VGS= 0 V, ID= -250 μA||-50|-|-|V|
|Gate-source threshold voltage|VGS(th)|VDS= VGS, ID= -250 μA||-2.0|-|-4.0|V|
|Gate-source leakage|IGSS|VGS= ± 20 V||-|-|± 500|nA|
|Zero gate voltage drain current|IDSS|VDS= max. rating, VGS= 0 V||-|-|-250|μA|
|||VDS= max. rating x 0.8, VGS= 0 V,<br>TJ=125 °C||-|-|-1000||
|Drain-source on-state resistance|RDS(on)|VGS= -10 V|ID= -9.3 Ab|-|0.093|0.14|Ω|
|Forward transconductance|gfs|VDS= 2 x VGS, IDS= -9 Ab||3.1|4.7|-|S|
|**Dynamic**||||||||
|Input capacitance|Ciss|VGS= 0 V,<br>VDS= -25 V,<br>f = 1.0 MHz, see fig. 9||-|900|-|pF|
|Output capacitance|Coss|||-|570|-||
|Reverse transfer capacitance|Crss|||-|140|-||
|Totalgate charge|Qg|VGS= -10 V|ID= -18 A, VDS= -0.8<br>max. rating. see fig. 17|-|26|39|nC|
|Gate-source charge|Qgs|||-|6.9|10||
|Gate-drain charge|Qgd|||-|9.7|15||
|Turn-on delay time|td(on)|VDD= -25 V, ID= -18 A,<br>Rg= 13Ω, RD= 1.3Ω, see fig. 16<br>(MOSFET switching times are<br>essentially independent of operating<br>temperature)||-|12|18|ns|
|Rise time|tr|||-|110|170||
|Turn-off delay time|td(off)|||-|21|32||
|Fall time|tf|||-|64|96||
|Gate input resistance|Rg|f = 1 MHz, open drain||0.7|-|3.9|Ω|
|**Drain-Source Body Diode Characteristics**||||||||
|Continuous source-drain diode current|IS|MOSFET symbol<br>showing the<br>integral reverse<br>p - n junction diode<br>S<br>D<br>G||-|-|-18|A|
|Pulsed diode forward currenta|ISM|||-|-|-60||
|Body diode voltage|VSD|TJ= 25 °C, IS= -18 A, VGS= 0 Vb||-|-|-6.3|V|
|Body diode reverse recovery time|trr|TJ= 25 °C, IF= -18 A, dI/dt = 100 A/μsb||54|120|250|ns|
|Body diode reverse recovery charge|Qrr|||0.20|0.47|1.1|μC|



## **Notes** 

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 14) 

b. Pulse width ≤ 300 μs; duty cycle ≤ 2 % 

S21-1262-Rev. B, 27-Dec-2021 

Document Number: 91459 

**2** 

For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**IRF9Z30** 

Vishay Siliconix 

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www.vishay.com<br>**----- End of picture text -----**<br>


## **TYPICAL CHARACTERISTICS** (25 °C, unless otherwise noted) 

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25<br>- 10 V<br>80 μs Pulse Test<br>20<br>- 8 V<br>15<br>- 7 V<br>10<br>VGS = - 5 V<br>5<br>- 5 V<br>- 4 V<br>0<br> 0            5             10           15          20          25<br>- VDS, Drain-to-Source Voltage (V)<br>, Drain Current (A)<br>D<br>- I<br>**----- End of picture text -----**<br>


**Fig. 1 - Typical Output Characteristics** 

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10 [3]<br>Operation in this Area Limited<br>5<br>               by RDS(on)<br>2<br>10 [2] SiHF9Z30<br>10 μs<br>5 SiHF9Z32<br>100 μs<br>SiHF9Z30<br>2<br>10 SiHF9Z32 1 μs<br>5<br>10 μs<br>21 T TSingle PulseCJ = 150 °C  = 25 °C DC<br>1 2 5 10 2 5 10 [2]<br>, Drain Current (A)<br>D<br>- I<br>**----- End of picture text -----**<br>


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- VDS, Drain-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


**Fig. 4 - Maximum Safe Operating Area** 

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10 [2]<br>80 µs Pulse Test<br>5 VDS = 2 x VGS<br>2<br>10<br>5<br>2<br>1<br>5<br>2 TJ = 150  ° C T J  = 25 °C<br>0.1<br>0 2 4 6 8 10<br>- VGS, Gate-to-Source Voltage (V)<br>, Drain Current (A)<br>D<br>- I<br>**----- End of picture text -----**<br>


**Fig. 2 - Typical Transfer Characteristics** 

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10<br>80 μs Pulse Test<br>VDS = 2 x VGS<br>8<br>6<br>TJ = 25 ° C<br>4<br>TJ = 150 °C<br>2<br>0<br>0 4 8 12 15 20<br>- ID, Drain Current (A)<br>, Transconductance (S)<br>fs<br>g<br>**----- End of picture text -----**<br>


**Fig. 5 - Typical Transconductance vs. Drain Current** 

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25<br>80 μs Pulse Test<br>20 - 10 V<br>15<br>- 8 V<br>10 - 7 V<br>5 VGS = - 5 V<br>- 5 V<br>- 4 V<br>0<br>0 1 2 3 4 5<br>- VDS, Drain-to-Source Voltage (V)<br>, Drain Current (A)<br>D<br>- I<br>**----- End of picture text -----**<br>


**Fig. 3 - Typical Saturation Characteristics** 

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10 [2]<br>5<br>2<br>10<br>TJ = 150 °C<br>5<br>2<br>1<br>5 TJ = 25  ° C<br>2<br>0.1<br>0 2 4 6 8 10<br>- VSD, Source-to-Drain Voltage (V)<br>, Reverse Drain Current (A)<br>SD<br>- I<br>**----- End of picture text -----**<br>


**Fig. 6 - Typical Source-Drain Diode Forward Voltage** 

Document Number: 91459 

S21-1262-Rev. B, 27-Dec-2021 

**3** For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**IRF9Z30** 

www.vishay.com 

Vishay Siliconix 

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1.25<br>ID = 1 mA<br>1.15<br>1.05<br>0.95<br>0.85<br>0.75<br>- 60 - 40 - 20 0 20 40 60 80 100 120 140 160<br>TJ, Junction Temperature (°C)<br>Voltage (Normalized)<br>, Drain-to-Source Breakdown<br>DS<br>V<br>**----- End of picture text -----**<br>


**Fig. 7 - Breakdown Voltage vs. Temperature** 

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3.0<br>ID = - 18 A<br>V GS = - 10 V<br>2.4<br>1.8<br>1.2<br>0.6<br>0.0<br>- 60 - 40 - 20 0 20 40 60 80 100 120 140 160<br>TJ, Junction Temperature (°C)<br>(Normalized)<br>, Drain-to-Source On Resistance<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


**Fig. 8 - Normalized On-Resistance vs. Temperature** 

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2000<br>VGS = 0 V, f = 1 MHz<br>Ciss = Cgs + Cgd, Cds Shorted<br>1600 C rss  = C gd<br>Coss = Cds + Cgd<br>1200<br>Ciss<br>800 Coss<br>400<br>C rss<br>0<br>1 2 5 10 2 5 10 [2]<br>- VDS, Drain-to-Source Voltage (V)<br>Capacitance (pF)<br>**----- End of picture text -----**<br>


**Fig. 9 - Typical Capacitance vs. Drain-to-Source Voltage** 

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20<br>ID = - 18 A<br>16<br>V DS = - 40 V<br>12<br>8<br>4<br>For test circuit<br>see figure 17<br>0<br>0 10 20 30 40 50<br>Qg, Total Gate Charge (nC)<br> Fig. 10 - Typical Gate Charge vs. Gate-to-Source Voltage<br>2.0<br>80 μs Pulse Test<br>1.6<br>1.2<br>VGS = - 10 V<br>0.8<br>0.4<br>VGS = - 20 V<br>0.0<br>0 12 24 36 48 60<br>- ID, Drain Current (A)<br> Fig. 11 - Typical On-Resistance vs. Drain Current<br>20<br>16<br>12 SiHF9Z30<br>8 SiHF9Z32<br>4<br>0<br>25 50 75 100 125 150<br>TC, Case Temperature (°C)<br>, Gate-to-Source Voltage (V)<br>GS<br>- V<br>, Drain to Source on Resistance<br>DS(on)<br>R<br>, Drain Current (A)<br>D<br>- I<br>**----- End of picture text -----**<br>


**Fig. 10 - Typical Gate Charge vs. Gate-to-Source Voltage** 

**Fig. 12 - Maximum Drain Current vs. Case Temperature** 

S21-1262-Rev. B, 27-Dec-2021 

Document Number: 91459 

**4** For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**IRF9Z30** 

Vishay Siliconix 

## www.vishay.com 

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Vary tp to obtain L<br>required peak IL DUT VDSS VDD - VDD<br>VGS = - 10 V tp EC + IL<br>IL 0.05 Ω tp VDS<br>VDD = 0 5 8 VDS EC = 0 75 BVDS<br>**----- End of picture text -----**<br>


## **Fig. 13a - Unclamped Inductive Test Circuit** 

**Fig. 13b - Unclamped Inductive Load Test Waveforms** 

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10<br>1 0 = 0.5<br>0.2<br>0.1 P DM<br>0.05<br>0.1 0.02 t1<br>Single Pulse t2<br>(Thermal Response) Notes:<br>0.01 1.  Duty Factor, D = t 1 /t 2<br>2.  Peak Tj = PDM x ZthJC + TC<br>10 [-2]<br>10 [-5] 10 [-4] 10 [-3] 10 [-2] 0.1 1 10<br>)thJC<br>Thermal Response (Z<br>**----- End of picture text -----**<br>


t1, Rectangular Pulse Duration (s) 

**Fig. 14 - Maximum Effective Transient Thermal Impedance, Junction-to-Case vs. Pulse Duration** 

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Current - VDS<br>regulator (Isolated<br>supply)<br>RD 50 kΩ Same type<br>12 V 0.2 μF as D.U.T<br>battery 0.3 μF<br>- D<br>required peak IVary IP to obtainL D.U.T +PS G D.U.T<br>RG - 1.5 mA S<br>VGS = - 10 V tp + VDS<br>IG ID<br>Current  Current<br>sampling sampling<br>resistor resistor<br>**----- End of picture text -----**<br>


**Fig. 13 - Switching Time Test Circuit** 

**Fig. 14 - Gate Charge Test Circuit** 

_Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91459._ 

Document Number: 91459 

S21-1262-Rev. B, 27-Dec-2021 

**5** 

For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

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## **Disclaimer** 

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 

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Revision: 01-Jan-2023 

Document Number: 91000 

**1**