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IRF9Z20PBF
Power MOSFET, P Channel, 50 V, 9.7 A, 0.28 ohm, TO-220, Through Hole
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: VISHAY
- Product type: Single MOSFETs
- SVHC: Lead (21-Jan-2025)
- No. of Pins: 3Pins
- Channel Type: P Channel
- Product Range: -
- Qualification: -
- Power Dissipation: 40W
- Transistor Mounting: Through Hole
- Rds(on) Test Voltage: 10V
- Transistor Case Style: TO-220
- Drain Source Voltage Vds: 50V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 9.7A
- Drain Source On State Resistance: 0.28ohm
- Gate Source Threshold Voltage Max: 4V
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.673 € |
| Current stock | 100+ |
| Lead time | 30 days |
Datasheet
**IRF9Z20, SiHF9Z20** Vishay Siliconix ~~—~~ www.vishay.com ## **Power MOSFET** **==> picture [234 x 232] intentionally omitted <==** **----- Start of picture text -----**<br> PRODUCT SUMMARY<br>VDS (V) -50<br>RDS(on) ( ) VGS = -10 V 0.28<br>Qg max. (nC) 26<br>Qgs (nC) 6.2<br>Qgd (nC) 8.6<br>Configuration Single<br>==<br>S<br>TO-220AB<br>G<br>S<br>e D 8<br>G D<br>P-Channel MOSFET<br>**----- End of picture text -----**<br> ## **FEATURES** - **FEATURES** • P-channel versatility • Compact plastic package • tie Fast switching - • Low drive current • Ease of paralleling • Excellent temperature stability • Material categorization: for definitions of compliance ; please see www.vishay.com/doc?99912 ## **DESCRIPTION** The power MOSFET technology is the key to Vishay’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of the power MOSFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The P-channel power MOSFETs are designed for application which require the convenience of reverse polarity operation. They retain all of the features of the more common N-channel power MOSFETs such as voltage control, very fast switching, ease of paralleling, and excellent temperature stability. P-channel power MOSFETs are intended for use in power stages where complementary symmetry with N-channel devices offers circuit simplification. They are also very useful in drive stages because of the circuit versatility offered by the reverse polarity connection. Applications include motor control, audio amplifiers, switched mode converters, control circuits and pulse amplifiers. ## **ORDERING INFORMATION** Package TO-220AB Lead (Pb)-free IRF9Z20PbF ~~pn~~ **ABSOLUTE MAXIMUM RATINGS** (TC = 25 °C, unless otherwise noted) ~~a~~ **PARAMETER SYMBOL LIMIT UNIT** Drain-Source Voltage VDS -50 V ~~es~~ Gate-Source Voltage VGS ± 20 TC = 25 °C -9.7 Continuous Drain Current VGS at - 10 V ID TC = 100 °C -6.1 A ~~rra~~ Pulsed Drain Current[a] ~~ee ee~~ IDM -39 ~~a~~ Linear Derating Factor 0.32 W/°C ~~a~~ Inductive Current, Clamped L = 100 μH ILM -39 A ~~a~~ Unclamped Inductive Current (Avalanche current) IL -2.2 A ~~a~~ Maximum Power Dissipation TC = 25 °C PD 40 W Operating Junction and Storage Temperature Range TJ, Tstg -55 to +150 °C ~~a~~ Soldering Recommendations (Peak temperature)[c] for 10 s 300 **Notes** a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 14). b. VDD = - 25 V, starting TJ = 25 °C, L =100 μH, Rg = 25 c. 0.063" (1.6 mm) from case. S16-0015-Rev. C, 18-Jan-16 Document Number: 90121 **1** For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **IRF9Z20, SiHF9Z20** Vishay Siliconix **==> picture [59 x 48] intentionally omitted <==** www.vishay.com |**THERMAL RESISTANCE RATINGS**|**THERMAL RESISTANCE RATINGS**|**THERMAL RESISTANCE RATINGS**|**THERMAL RESISTANCE RATINGS**|**THERMAL RESISTANCE RATINGS**| |---|---|---|---|---| |**PARAMETER**|**SYMBOL**|**TYP.**|**MAX.**|**UNIT**| |Maximum Junction-to-Ambient|RthJA|-|80|°C/W| |Case-to-Sink, Flat, Greased Surface|RthCS|1.0|-|| |Maximum Junction-to-Case (Drain)|RthJC|-|3.1|| |**SPECIFICATIONS**(TJ= 25 °C,unless otherwise noted)|**SPECIFICATIONS**(TJ= 25 °C,unless otherwise noted)|**SPECIFICATIONS**(TJ= 25 °C,unless otherwise noted)|**SPECIFICATIONS**(TJ= 25 °C,unless otherwise noted)||||| |---|---|---|---|---|---|---|---| |**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**||**MIN.**|**TYP.**|**MAX.**|**UNIT**| |**Static**|||||||| |Drain-Source Breakdown Voltage|VDS|VGS= 0 V, ID= -250 μA||-50|-|-|V| |Gate-Source Threshold Voltage|VGS(th)|VDS= VGS, ID= -250 μA||-2.0|-|-4.0|V| |Gate-Source Leakage|IGSS|VGS= ± 20 V||-|-|± 500|nA| |Zero Gate Voltage Drain Current|IDSS|VDS= max. rating, VGS= 0 V||-|-|-250|μA| |||VDS= max. ratingx 0,8, VGS= 0 V, TJ=125°C||-|-|-1000|| |Drain-Source On-State Resistance|RDS(on)|VGS= -10 V|ID= -5.6 Ab|-|0.20|0.28|| |Forward Transconductance|gfs|VDS= 2 x VGS, IDS= -5.6 Ab||2.3|3.5|-|S| |**Dynamic**|||||||| |Input Capacitance|Ciss|VGS= 0 V,<br>VDS= -25 V,<br>f = 1.0 MHz, see fig. 9||-|480|-|pF| |Output Capacitance|Coss|||-|320|-|| |Reverse Transfer Capacitance|Crss|||-|58|-|| |Total Gate Charge|Qg|VGS= -10 V|ID= -9.7 A, VDS= -0.8 max.<br>rating. see fig. 17|-|17|26|nC| |Gate-Source Charge|Qgs|||-|4.1|6.2|| |Gate-Drain Charge|Qgd|||-|5.7|8.6|| |Turn-On Delay Time|td(on)|VDD= -25 V, ID= -9.7 A,<br>Rg= 18, RD= 2.4, see fig. 16 (MOSFET<br>switching times are essentially independent<br>of operating temperature)||-|8.2|12|ns| |Rise Time|tr|||-|57|86|| |Turn-Off Delay Time|td(off)|||-|12|18|| |Fall Time|tf|||-|25|38|| |Internal Drain Inductance|LD|Between lead,<br>6 mm (0.25") from<br>package and center of<br>die contact<br>D<br>S<br>G||-|4.5|-|nH| |Internal Source Inductance|LS|||-|7.5|-|| |**Drain-Source Body Diode Characteristics**|||||||| |Continuous Source-Drain Diode Current|IS|MOSFET symbol<br>showing the<br>integral reverse<br>p - n junction diode<br>S<br>D<br>G||-|-|-9.7|A| |Pulsed Diode Forward Currenta|ISM|||-|-|-39|| |Body Diode Voltage|VSD|TJ= 25 °C, IS= - 9.7 A, VGS= 0 Vb||-|-|-6.3|V| |Body Diode Reverse Recovery Time|trr|TJ= 25 °C, IF= - 9.7 A, dI/dt = 100 A/μsb||56|110|280|ns| |Body Diode Reverse Recovery Charge|Qrr|||0.17|0.34|0.85|μC| |Forward Turn-On Time|ton|Intrinsic turn-on time is negligible (turn-on is dominated by LSand LD)|||||| ## **Notes** a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 14). b. Pulse width 300 μs; duty cycle 2 %. S16-0015-Rev. C, 18-Jan-16 Document Number: 90121 **2** For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **IRF9Z20, SiHF9Z20** Vishay Siliconix **==> picture [59 x 48] intentionally omitted <==** **==> picture [77 x 10] intentionally omitted <==** **----- Start of picture text -----**<br> www.vishay.com<br>**----- End of picture text -----**<br> ## **TYPICAL CHARACTERISTICS** (25 °C, unless otherwise noted) **==> picture [202 x 166] intentionally omitted <==** **----- Start of picture text -----**<br> 15<br>VGS = - 10, - 8 V 80 µs Pulse Test<br>12 - 7 V<br>9<br>- 6 V<br>6<br>- 5 V<br>3<br>- 4 V<br>0<br>0 5 10 15 20 25<br>90121_01 Negative VDS, Drain-to-Source Voltage (V)<br>, Drain Current (A)<br>D<br>Negative I<br>**----- End of picture text -----**<br> **Fig. 1 - Typical Output Characteristics** **==> picture [203 x 168] intentionally omitted <==** **----- Start of picture text -----**<br> 10 [3]<br>5 Operation in this area limited<br>by RDS(on)<br>2<br>10 [2] IRF9Z20, SiHF9Z20<br>5 IRF9Z22, SiHF9Z22 10 µs<br>2 100 µs<br>10<br>5 IRF9Z20, SiHF9Z20 1 ms<br>IRF9Z22, SiHF9Z22<br>2 10 ms<br>1<br>5 TC = 25 ° C DC<br>2 Single Pulse T J = 150 ° C<br>0.1<br>1 2 5 10 2 5 10 [2]<br>90121_04 Negative VDS, Drain-to-Source Voltage (V)<br>, Drain Current (A)<br>D<br>Negative I<br>**----- End of picture text -----**<br> **Fig. 4 - Maximum Safe Operating Area** **==> picture [201 x 378] intentionally omitted <==** **----- Start of picture text -----**<br> 10 [2]<br>80 µs Pulse Test<br>5 VDS = 2 x VGS<br>2<br>10<br>5<br>2<br>1<br>5<br>2 TJ = 150 ° C T J = 25 °C<br>0.1<br>0 2 4 6 8 10<br>90121_02 Negative VGS, Gate-to-Source Voltage (V)<br> Fig. 2 - Typical Transfer Characteristics<br>15<br>80 µs Pulse Test<br>- 8 V<br>VGS = - 10<br>12 - 7 V<br>9<br>- 6 V<br>6<br>- 5 V<br>3<br>- 4 V<br>0<br>0 1 2 3 4 5<br>90121_03 Negative VDS, Drain-to-Source Voltage (V)<br>, Drain Current (A)<br>D<br>Negative I<br>, Drain Current (A)<br>D<br>Negative I<br>**----- End of picture text -----**<br> **Fig. 3 - Typical Saturation Characteristics** **==> picture [202 x 377] intentionally omitted <==** **----- Start of picture text -----**<br> 5.0<br>80 µs Pulse Test<br>VDS < - 50 V TJ = 25 °C<br>4.0<br>TJ = 150 °C<br>3.0<br>2.0<br>1.0<br>0.0<br>0 4 8 12 16 20<br>90121_06 Negative ID, Drain Current (A)<br> Fig. 5 - Typical Transconductance vs. Drain Current<br>10 [2]<br>5<br>2<br>10<br>TJ = 150 °C<br>5<br>2 T J = 25 °C<br>1<br>5<br>2<br>0.1<br>0 2 4 6 8 10<br>90121_07 Negative VSD, Source-to-Drain Voltage (V)<br>,Transconductance (S)<br>fs<br>g<br>, Reverse Drain Current (A)<br>DR<br>Negative I<br>**----- End of picture text -----**<br> **Fig. 6 - Typical Source-Drain Diode Forward Voltage** Document Number: 90121 S16-0015-Rev. C, 18-Jan-16 **3** For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **IRF9Z20, SiHF9Z20** Vishay Siliconix **==> picture [59 x 48] intentionally omitted <==** ## www.vishay.com **==> picture [203 x 166] intentionally omitted <==** **----- Start of picture text -----**<br> 1.25<br>ID = 1 mA<br>1.15<br>1.05<br>0.95<br>0.85<br>0.75<br>- 60 - 40 - 20 0 20 40 60 80 100 120 140 160<br>90121_08 TJ, Junction Temperature (°C)<br>Voltage (Normalized)<br>, Drain-to-Source Breakdown<br>DSS<br>BV<br>**----- End of picture text -----**<br> **Fig. 7 - Breakdown Voltage vs. Temperature** **==> picture [203 x 167] intentionally omitted <==** **----- Start of picture text -----**<br> 3.0<br>ID = - 9.7 A<br>V GS = - 10 V<br>2.4<br>1.8<br>1.2<br>0.6<br>0.0<br>- 60 - 40 - 20 0 20 40 60 80 100 120 140 160<br>90121_09 TJ, Junction Temperature (°C)<br>(Normalized)<br>, Drain-to-Source On Resistance<br>DS(on)<br>R<br>**----- End of picture text -----**<br> **Fig. 8 - Normalized On-Resistance vs. Temperature** **==> picture [203 x 167] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>VGS = 0 V, f = 1 MHz<br>C iss = C gs + C gd , C ds Shorted<br>800 Crss = Cgd<br>Coss = Cds + Cgs Cgd / (Cgs + Cgd)<br>≈ C ds + C gd<br>600<br>Ciss<br>400<br>Coss<br>200<br>C rss<br>0<br>1 2 5 10 2 5 10 [2]<br>90121_10 Negative VDS, Drain-to-Source Voltage (V)<br>C, Capacitance (pF)<br>**----- End of picture text -----**<br> **Fig. 9 - Typical Capacitance vs. Drain-to-Source Voltage** **==> picture [202 x 171] intentionally omitted <==** **----- Start of picture text -----**<br> 20<br>ID = - 9.7 A<br>16<br>V SD = - 40 V<br>12<br>8<br>4<br>For test circuit<br>see figure 17<br>0<br>0 8 16 24 32 40<br>90121_11 QG, Total Gate Charge (nC)<br>, Gate-to-Source Voltage (V)<br>GS<br>Negative V<br>**----- End of picture text -----**<br> **Fig. 10 - Typical Gate Charge vs. Gate-to-Source Voltage** **==> picture [203 x 378] intentionally omitted <==** **----- Start of picture text -----**<br> 2.0<br>80 µs Pulse Test<br>1.6<br>1.2<br>VGS = - 10 V<br>0.8<br>0.4<br>VGS = - 20 V<br>0.0<br>0 8 16 24 32 40<br>90121_12 Negative ID, Drain Current (A)<br> Fig. 11 - Typical On-Resistance vs. Drain Current<br>10<br>8<br>IRF9Z20, SiHF9Z20<br>6<br>IRF9Z22, SiHF9Z22<br>4<br>2<br>0<br>25 50 75 100 125 150<br>90121_13 TC, Case Temperature (°C)<br>, Drain-to-Source On Resistance<br>DS(on)<br>R<br>, Drain Current (A)<br>D<br>Negative I<br>**----- End of picture text -----**<br> **Fig. 12 - Maximum Drain Current vs. Case Temperature** S16-0015-Rev. C, 18-Jan-16 Document Number: 90121 **4** For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **IRF9Z20, SiHF9Z20** Vishay Siliconix ## www.vishay.com **Fig. 13a - Unclamped Inductive Test Circuit** **Fig. 13b - Unclamped Inductive Load Test Waveforms** **==> picture [408 x 164] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>aee<br>eee ELLIE TA<br>D = 0.5 CEEEE eet<br>1 |<br>Snr 0.2 A A A OA a es ce BB|<br>0.1 aes 8 a| eresce 1 tT8titi ytyee PDM<br>0.05<br>SH} on<br>0.1 Peee 0.020.01 eeaeciaelee Single Pulse(Thermal Response) eeeaaee eee eee| Notes: t1 t2<br>1. Duty Factor, D = t 1 /t 2<br>| 2. Peak Tj = PDM x ZthJC + TC<br>10 [-2]<br>10 [-5] 10 [-4] 10 [-3] 10 [-2] 0.1 1 10<br>90121_05 t1, Rectangular Pulse Duration (s)<br>)thJC<br>Thermal Response (Z<br>**----- End of picture text -----**<br> **Fig. 14 - Maximum Effective Transient Thermal Impedance, Junction-to-Case vs. Pulse Duration** **Fig. 15 - Switching Time Test Circuit** **Fig. 16 - Gate Charge Test Circuit** S16-0015-Rev. C, 18-Jan-16 Document Number: 90121 **5** For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **IRF9Z20, SiHF9Z20** Vishay Siliconix **==> picture [59 x 48] intentionally omitted <==** www.vishay.com **==> picture [204 x 166] intentionally omitted <==** **----- Start of picture text -----**<br> 10 [12]<br>14 V<br>10 [10]<br>16 V<br>10 [8]<br>18 V<br>10 [6]<br>20 V<br>10 [4]<br>10 [2]<br>50 70 90 110 130 150<br>90121_18 Temperature (°C)<br>Time (H)<br>**----- End of picture text -----**<br> **Fig. 17 - Typical Time to Accumulated 1 % Gate Failure** **==> picture [239 x 166] intentionally omitted <==** **----- Start of picture text -----**<br> 10 [4] 1<br>60 % UCL<br>10 [3] 0.1<br>90 % UCL<br>10 [2] 99 % UCL 10 [-2]<br>20 FIT’s<br>10 10 [-3]<br>1 10 [-4]<br>50 70 90 110 130 150<br>90121_19 Temperature (°C)<br>% Per 1000 Hours<br>Random Failure Rate (FIT)<br>**----- End of picture text -----**<br> **Fig. 18 - Typical High Temperature Reverse Bias (HTRB) Failure Rate** _Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?90121._ S16-0015-Rev. C, 18-Jan-16 Document Number: 90121 **6** For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **Package Information** www.vishay.com Vishay Siliconix **TO-220-1** **==> picture [499 x 384] intentionally omitted <==** **----- Start of picture text -----**<br> A MILLIMETERS INCHES<br>E DIM.<br>MIN. MAX. MIN. MAX.<br>F<br>A 4.24 4.65 0.167 0.183<br>Ø P b 0.69 1.02 0.027 0.040<br>b(1) 1.14 1.78 0.045 0.070<br>c 0.36 0.61 0.014 0.024<br>D 14.33 15.85 0.564 0.624<br>E 9.96 10.52 0.392 0.414<br>m et | SS<br>e 2.41 2.67 0.095 0.105<br>e(1) 4.88 5.28 0.192 0.208<br>F 1.14 1.40 0.045 0.055<br>H(1) 6.10 6.71 0.240 0.264<br>1 2 3<br>J(1) 2.41 2.92 0.095 0.115<br>L 13.36 14.40 0.526 0.567<br>L(1) 3.33 4.04 0.131 0.159<br>M [*] Ø P 3.53 3.94 0.139 0.155<br>Q 2.54 3.00 0.100 0.118<br>a b(1)<br>ECN: X15-0364-Rev. C, 14-Dec-15<br>DWG: 6031<br>Note<br>• M* = 0.052 inches to 0.064 inches (dimension including<br>protrusion), heatsink hole for HVM<br>C<br>b<br>e<br>7 | t J(1) | =———<br>oT e(1)<br>Package Picture<br>ASE Xi’an<br>———<br>Q<br>H(1)<br>D<br>L(1)<br>L<br>**----- End of picture text -----**<br> Revison: 14-Dec-15 Document Number: 66542 **1** For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **Legal Disclaimer Notice** Vishay www.vishay.com **==> picture [59 x 48] intentionally omitted <==** ## **Disclaimer** ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. _**© 2019 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED**_ Revision: 01-Jan-2019 Document Number: 91000 **1**
Updated at April 29, 2026
Vishay is a global leader in the manufacturing of discrete semiconductors and passive electronic components. Renowned for its exceptional quality and engineering expertise, the company produces highly reliable solutions that drive innovation across the industrial, automotive, telecommunications, and consumer electronics markets. From advanced factory automation to vehicle electrification, Vishay components provide the foundational building blocks for modern electronic design. The company's expansive portfolio is heavily focused on efficient power management, signal routing, and energy storage. Within its passive component lineup, Vishay is recognized for its extensive array of high-performance capacitors, including robust aluminium electrolytic, film, and polymer variants, alongside highly efficient power inductors. In the realm of discrete semiconductors, Vishay is a premier manufacturer of single and dual MOSFETs, as well as a vast selection of Schottky, Zener, and fast-recovery rectifier diodes designed for demanding power applications. Furthermore, Vishay delivers industry-leading circuit protection and thermal management solutions. With a broad offering of transient voltage suppressors (TVS diodes) and temperature-sensing NTC thermistors, these components are engineered to safeguard sensitive circuitry against both electrical and thermal overstress. By combining this vital mix of advanced discretes and passives, Vishay enables engineers to develop robust, space-saving, and highly resilient electronic systems.
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