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IRF9956TRPBF
Dual MOSFET, N Channel, 30 V, 30 V, 3.5 A, 3.5 A, 0.06 ohm
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- Manufacturer: INFINEON
- Product type: Dual MOSFETs
- Transistor Polarity:Dual N Channel; Continuous Drain Current Id:3.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.06ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (27-Jun-2018)
- No. of Pins: 8Pins
- Channel Type: N Channel
- Product Range: HEXFET Series
- Qualification: -
- Transistor Case Style: SOIC
- Operating Temperature Max: 150°C
- Power Dissipation N Channel: 2W
- Power Dissipation P Channel: 2W
- Drain Source Voltage Vds N Channel: 30V
- Drain Source Voltage Vds P Channel: 30V
- Continuous Drain Current Id N Channel: 3.5A
- Continuous Drain Current Id P Channel: 3.5A
- Drain Source On State Resistance N Channel: 0.06ohm
- Drain Source On State Resistance P Channel: 0.06ohm
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.291 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**==> picture [197 x 81] intentionally omitted <==** **----- Start of picture text -----**<br> G1S1 12 87 D1D1 Voss = 30V<br>S2 3 6 D2<br>G2 4 5 D2 Rpsjon) = 0.10 Ω<br>Top View<br>**----- End of picture text -----**<br> **==> picture [27 x 9] intentionally omitted <==** **----- Start of picture text -----**<br> SO-8<br>**----- End of picture text -----**<br> **==> picture [432 x 113] intentionally omitted <==** **----- Start of picture text -----**<br> Absolute Maximum Ratings ( T, = 25°C Unless Otherwise Noted)<br>Maximum<br>Symbol | __ 30 | Units _|<br>V<br>#20<br>Continuous Drain Current© Ta = 28°C ID po<br>Ta = 70°C 2.8 A<br>16<br>17<br>. rer Ta = 25°C 2.0<br>PD<br>ee<br>**----- End of picture text -----**<br> **==> picture [4 x 6] intentionally omitted <==** **----- Start of picture text -----**<br> θ<br>**----- End of picture text -----**<br> **==> picture [432 x 241] intentionally omitted <==** **----- Start of picture text -----**<br> Parameter————=(Min.[Typ.[Max.<br>[Viempss[| [Units] Conditions ‘|<br>∆ ∆<br>[ Vass Ty_|Drain-to-Source[Breakdown VoltagBr e akclownTemp. CoefficientVottage ||-—|0.01930 |——| — — || VI°CV || Vas=OV,lReference t o =250™A25°C, Ip=imA<br>Ω<br>Feson [Sate OaninsoureOnsestany | gostgay| | veg=asV 21080<br>[Vas [008] 020<br>fs [Gate Threshold Votage «(1.0 —-|——| V |Vos=Ves,lo=250A<br>= [Forward ewesnnatamecnes Transconductance =| 12|——| S |Vos=15V,lp=35A<br>ELE [ Se fesse sorrare—<br>‘lossGss [ Gaieenurce Gateto-Source Rowe Leanne [xfSe:aaaoo | nA heeaa<br>fay Reverse Leakage || —| -100<br>Sg [Teta Gate Charge | 89] 14 || t= TBA<br>[Oy ——fesetnoe Coe S12 we [swtoy<br>Rion | Gate-to-Drain (Willer) Charge [| 18[S5 |__| Vas= 10V, See Fig. 100<br>ft, _[Turn-On Delay Time «|| 62 | 12 Voo = 10V<br>Ω<br>fgon -'([RiseTime(Tumor Delay—SS=~=<“C*~‘“*~*~s*SCBYTime ———=SS«d CB lp = 1.08<br>SSCs Ω<br>fe [Css siFaliTime | 18 8. | 28 R=Ro=10_@ 60<br>[Coss [Input Capacitance ——=S=S~«* | 190] Vas = OV<br>**----- End of picture text -----**<br> **==> picture [262 x 74] intentionally omitted <==** **----- Start of picture text -----**<br> | Min. |Typ. [Max. [Units] [Conditions] MOSFET symbol D<br>G<br>A integral reverse<br>[082 | 1.2 | V [y= 25°C, l= 125A, Ves=OVO S |<br>**----- End of picture text -----**<br> > ISD ≤ 2.0A, di/dt ≤ 100A/s,Vp>p ≤ Ty ≤ 150°C Rg=25_ Ω , Ia~g= 2.0A. ≤ 300ys; duty cycle ≤ 2%. on FR-4 board, t ≤ **==> picture [433 x 477] intentionally omitted <==** **----- Start of picture text -----**<br> 100 VGS 100 VGS<br> TOP 15V TOP 15V<br> 10V 10V<br> 7.0V 7.0V<br> 5.5V 5.5V<br> 4.5V 4.5V<br> 4.0V ee ee 4.0V ee eee<br> 3.5V 3.5V<br> BOTTOM 3.0V eelTg OI BOTTOM 3.0V aFPLee el<br>10 ed 10<br>_ ——Tooo 7 (0AAne<br>ey 77.4 eee ee | VKee”<br>| yy \ — | Off | 3.0V<br> 3.0V<br>Uy 20µs PULSE WIDTH p or 20µs PULSE WIDTH<br>1 YS T = 25°CJ A 1 V i T = 150°CJ<br>0.1 1 10 0.1 1 10<br>V , Drain-to-Source Voltage (V)DS V , Drain-to-Source Voltage (V)DS<br>Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics<br>100 PES] 100 SSS<br>es ee<br>ee ee ee ee ee ee es es ee ee<br>ee ee ee ee ee ee 10 PP eee<br>10 T = 25°CJ T = 150°CJ<br>T = 150°CJ<br>|. ee ee / T = 25°CJ<br>1<br>Yo4 lt i | B ee s=<br> V = 10VDS<br>1 PE Pp 20µs PULSE WIDTH RR A 0.1 eeEARHf seJ yt oee| Pe V = 0VGS<br>3.0 3.5 4.0 4.5 5.0 5.5 6.0 0.4 0.6 0.8 1.0 1.2 1.4<br>V , Gate-to-Source Voltage (V)GS V , Source-to-Drain Voltage (V)SD<br>I , Drain-to-Source Current (A)D I , Drain-to-Source Current (A)D<br>I , Reverse Drain Current (A)SD<br>D<br>I , Drain-to-Source Current (A)<br>**----- End of picture text -----**<br> **==> picture [435 x 200] intentionally omitted <==** **----- Start of picture text -----**<br> 2.0 0.12<br>ID = 2.2A<br>e e ee ee<br>1.5 T ea D 0.10 LE V = 4.5VGS Ls<br>ee ee ee<br>1.0 0.08<br>Ce<br>eI ep<br> V = 10VGS<br>0.5 0.06<br>VGS = 10V<br>0.0 CT T] 0.04 Pee Pe<br>-60 -40 -20 0 20 40 60 80 100 120 140 160 0 2 4 6 8 10 12 [A]<br>T , Junction TemperatureJ ( C)°<br>I , Drain Current (A)D<br>Ω<br>(Normalized)<br>DS(on)<br>R , Drain-to-Source On Resistance<br>**----- End of picture text -----**<br> **==> picture [424 x 202] intentionally omitted <==** **----- Start of picture text -----**<br> 0.16 100<br> IDD<br>TOP 0.89A<br>ee 0.14 eee Nae 1.6A<br>a ae 8 ee 80 a BOTTOM 2.0A<br>8 0.12 ee<br>0.10<br>» HEAee ee eee 60<br>0.08<br>es Se eS I = 3.5AD NENG<br>0.06 40<br>ed ee Xt AL [[tt]]<br>fe 0.04 ee ee NNO eee<br>é NaN<br>ee 20<br>ee a PpOIAAADOIAAAD<br>0.02<br>eR] eswo 0.00 i a A 0 FSSeeeeee ~a<br>0 3 6 9 12 15 25 50 75 100 125<br>V , Gate-to-Source Voltage (V)GS Starting T , Junction Temperature (°C)JJ<br>Ω<br>AS<br>E , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br> **==> picture [209 x 198] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br> IDD<br>TOP 0.89A<br>Nae 1.6A<br>80 a BOTTOM 2.0A<br>60 NENG<br>40<br>Xt AL [[tt]]<br>ee NNO eee<br>NaN<br>20<br>PpOIAAADOIAAAD<br>~a<br>FSSeeeeee<br>0<br>25 50 75 100 125 150<br>Starting T , Junction Temperature (°C)JJ<br>AS<br>E , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br> **==> picture [435 x 474] intentionally omitted <==** **----- Start of picture text -----**<br> 350 20<br>V = 0V, f = 1MHzGS ID = 1.8A<br>300 C = C + C , C SHORTEDC = Ciss gs gd dsrss gd VDS = 10V<br>= C = C + Coss ds gd 16 P T T<br>NS ee<br>250<br>Ciss<br>200 PINE C S oss T 12 ae<br>pT Wa<br>NS PT tT TE ET [TAL]<br>150 KON 8 PTT PT rPrTM<br>SEE TE<br>100 pS Crss Nall rT YT TTY<br>ep es A<br>4<br>50<br>aPOSS) eel = Eest<br>0 el A 0 0 Yi 2 ti [tit] 4 6 i tt 8 10<br>1 10 100<br>V , Drain-to-Source Voltage (V)DS Q , Total Gate Charge (nC)G<br>Fig 9. Typical Capacitance Vs. Fig 10. Typical Gate Charge Vs.<br>Drain-to-Source Voltage Gate-to-Source Voltage<br> 100<br>Raa 0.500.20 om a ee<br> 10<br>0.10<br>0.05<br>enna er een —NN<br>ff<br>0.02 TI PDM |<br> 1 0.01<br>t1<br>SINGLE PULSE t2<br>an (THERMAL RESPONSE) ee<br>Notes:<br>ey ee<br>1. Duty factor D = t / t1 2<br>a ayy IE 2. Peak TJ= P DM x ZthJA + TA<br>0.1<br>0.00001 0.0001 0.001 0.01 0.1 1 10 100<br>t , Rectangular Pulse Duration (sec)1<br>C, Capacitance (pF)<br>GS<br>V , Gate-to-Source Voltage (V)<br>thJA<br>(Z )<br>Thermal Response<br>**----- End of picture text -----**<br> ## **SO-8 Package Outline** Dimensions are shown in millimeters (inches) **==> picture [355 x 338] intentionally omitted <==** **----- Start of picture text -----**<br> INCHES MILLIMETERS<br>DIM<br>D B MIN MAX MIN MAX<br>A . 5 oe A .0532 .0688 1.35 1.75<br>A1 .0040 .0098 0.10 0.25<br>7 —a— b .013 .020 0.33 0.51<br>8 7 6 5 c .0075 .0098 0.19 0.25<br>fa 6 ba H es D .189 .1968 4.80 5.00<br>E<br>0.25 [.010] A E .1497 .1574 3.80 4.00<br>= 1 2 3 4 e .050 BASIC 1.27 BASIC<br>—— a<br>e1 .025 BASIC 0.635 BASIC<br>T o r r | po H .2284 .2440 5.80 6.20<br>K .0099 .0196 0.25 0.50<br>6X e<br>[TH J L .016 .050 0.40 1.27<br>y 0° 8° 0° 8°<br>7 e1 K x 45°<br>A<br>C ue<br>y<br>0.10 [.004]<br>e 8X b em A1 o ( 8X L fE EEn 8X c = E=t4<br>[eo] 0.25 [.010] I C TT A B I 7<br>FOOTPRINT<br>1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994. 8X 0.72 [.028]<br>2. CONTROLLING DIMENSION: MILLIMETER<br>3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].<br>4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.<br>5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.<br> MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].<br>6.46 [.255] ; [ood] aan<br>6 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.<br> MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].<br>7 DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO<br>0000S<br>3X 1.27 [.050] ee<br>8X 1.78 [.070]<br>**----- End of picture text -----**<br> ## NOTES: 1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994. 2. CONTROLLING DIMENSION: MILLIMETER 3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES]. 4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA. - 5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS. MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006]. 6 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS. MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010]. - 7 DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE. ## **SO-8 Part Marking** EXAMPLE: THIS IS AN IRF7101 (MOSFET) XXXX INTERNATIONAL F7101 RECTIFIER LOGO ~~m~~ e ## DATE CODE (YWW) P = DESIGNATES LEAD-FREE PRODUCT (OPTIONAL) Y = LAST DIGIT OF THE YEAR WW = WEEK A = ASSEMBLY SITE CODE LOT CODE PART NUMBER ## **SO-8 Tape and Reel** Dimensions are shown in millimeters (inches) **==> picture [196 x 306] intentionally omitted <==** **----- Start of picture text -----**<br> TERMINAL NUMBER 1<br>oO Oo 6<br>12.3 ( .484 )<br>11.7 ( .461 )<br>8.1 ( .318 )<br>7.9 ( .312 ) | FEED DIRECTION<br>| 330.00<br>(12.992)<br> MAX.<br>14.40 ( .566 )<br>12.40 ( .488 )<br>**----- End of picture text -----**<br> NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualifications Standards can be found on IR’s Web site. **IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 09/04
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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