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IRF9953TRPBF
Dual MOSFET, P Channel, 30 V, 30 V, 2.3 A, 2.3 A, 0.165 ohm
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Dual MOSFETs
- Transistor Polarity:Dual P Channel; Continuous Drain Current Id:-2.3A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.165ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Volta
- No. of Pins: 8Pins
- Channel Type: P Channel
- Product Range: HEXFET Series
- Qualification: -
- Transistor Case Style: SOIC
- Operating Temperature Max: 150°C
- Power Dissipation N Channel: 2W
- Power Dissipation P Channel: 2W
- Drain Source Voltage Vds N Channel: 30V
- Drain Source Voltage Vds P Channel: 30V
- Continuous Drain Current Id N Channel: 2.3A
- Continuous Drain Current Id P Channel: 2.3A
- Drain Source On State Resistance N Channel: 0.165ohm
- Drain Source On State Resistance P Channel: 0.165ohm
| Delivery and price | |
|---|---|
| Units per pack | 500 |
| Price | 0.364 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
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G1S1 12 87 D1D1 Voss = -30V<br>S2 3 6 D2<br>G2 4 5 D2 Rpsjon) = 0.25 Ω<br>Top View<br>**----- End of picture text -----**<br>
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SO-8<br>**----- End of picture text -----**<br>
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Absolute Maximum Ratings ( T, = 25°C Unless Otherwise Noted)<br>Symbol | [Maximum]<br>“30 |_Units _|<br>V<br>#20<br>Continuous Drain Current© Ta = 28°C ID pA<br>Ta = 70°C -1.8 A<br>-10<br>16<br>. rer Ta = 25°C 2.0<br>PD<br>ee<br>**----- End of picture text -----**<br>
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[Viempss _|Drain-to-Source Breakdown Voltage |-30|——| —— | V | Ves=0V,lo=-250HA<br>∆ ∆<br>F Viempss Ty [Breakdown Voltage Temp. Coefficient |-—|0.019 — | VPC | Reference to 25°C, Ip=-imA<br>Ω<br>Feson [Sate OaninSouee Onsen |—Ippefaaa| [Veg =48V = asm8<br>Volage—————«i[-1.0/<br>[Vast [Gate Threshold [= [0.28010.400<br>Transconductance———‘[—-|-24)<br>eeefas [Forward[Dantosnwee tease caret = STas—| —— | | VWAS||Vos=Ves,lo=-250K8apgVos=-18V,Ip=-23Aa Ves SOT<br>‘losscss [ Gale-enurce Gateto-Source Rowe Leanne [xfSc:azpaoo | nA hesaov<br>Reverse Leakage [| —| -100<br>[O5;__|Gate-o-Source<br>ee<br>[Oy Charge || 17 [84 | ne | Vos = -t0v<br>_[Turn-OnDelayTime——SS«[<br>Ror) | Gate-to-Drain (Miller) Charge [=| 7.7 [22 |__| Vos=-10v, See Fig. 10<br>'([RiseTime———SSCSC~“~‘“*~*~*~<br>fh, |+ 97 | «|19 Voolp =-1.0A= -10V<br>Ω<br>A ed Ro=10 Ω @<br>[Css [input Capacitance ——SSSC* | 190, Ves = OV<br>**----- End of picture text -----**<br>
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[Typ. [Max. [Units[ MOSFET Conditions| symbol D<br>A integral reverse G<br>[082 | 1.2 | V [Ty= 25°C, lg=-1.26A Ves= OVO S |<br>**----- End of picture text -----**<br>
> ISD ≤ -1.3A, di/dt ≤ -92A/us, Vpp ≤ Ty ≤ 150°C
Ty = 25°C, L = 67mH @® Pulse width ≤ 300ys; duty cycle ≤ Ω
≤
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100 TOP - 15V vest EH 100 TOP - 15V vest EH<br> - 10V a - 10V a<br> - 7.0V - 5.5V ee ee - 7.0V - 5.5V ee<br> - 4.5V Petty - 4.5V ee ee<br> - 4.0V - 4.0V<br> - 3.5V - 3.5V<br> BOTTOM - 3.0V BOTTOM - 3.0V<br>10 Hi amTT TTT 10 ieeomee<br>— eS eel —— Staa<br>a eee o_o ee rr ee ee . .. eee<br>|__| | | ~A— eee ee anal<br>1 | LGA.J 1 | LGLr A<br> -3.0V<br>SS -3.0V Aaa a<br>7“ ee ZZ ee<br>Saal LLM aan<br>0.1 CaSamal T = 25°C 20us J PULSE WIDTH A 0.1 Caatila T = 150°C 20us J PULSE WIDTH<br>0.1 1 10 0.1 1 10<br>-V , Drain-to-Source Voltage (V)DS -V , Drain-to-Source Voltage (V)DS<br>D D<br>-I , Drain-to-Source Current (A) -I , Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>
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100 100<br>Fetea ee ee ee ee7 ee7eee =a a<br>10 eePee eeeeee eee 10 eeee ee eee<br>T = 25°CJ T = 150°CJ<br>| SSS SSS ———<br>ee ee eee eee ee eee eee e ee,eee ee ee<br>T = 150°CJ<br>T = 25°CJ<br>1 1<br>Ail= {| | | 7 | |<br>ee ——— Se ee<br>po ee ee ee eee eee ee | ee 2 eee eee eee<br>0.1 ccP| V = -10V ous DS purse wineior A 0.1 |Peeytft 2 eeUf |ee| TTteowee eee<br>3.0 4.0 5.0 6.0 7.0 8.0 0.4 0.6 0.8 1.0 1.2 1.4<br>-V , Gate-to-Source Voltage (V)GS -V , Source-to-Drain Voltage (V)SD<br>SD<br>-I , Reverse Drain Current (A)<br>D<br>-I , Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>
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2.5<br>2.0<br>ID = -1.0A<br>T ou) os «|<br>2.0<br>E E} 8 p+<br>1.5<br>EVENTONOQ0000822;¢01 s0 1.5 { ia Oo|i<br>44 [A]<br>1.0 Lea 8 [eTft | ff<br>1.0<br>TEL pf pf<br>0.5<br>0.5<br>SERIE) FS<br>0.0 PE E VGS = -10V ||. 0.0 SeesFEE<br>-60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 1.0 2.0 3.0 4.0 5.0<br>T , Junction TemperatureJ ( C)°<br>-I , Drain Current (A)D<br>Fig 5. Normalized On-Resistance Fig 6. Typical On-Resistance Vs. Drain<br>Vs. Temperature Current<br>0.80 150<br>ID<br>TOP -0.58A<br>- |) fit<br>-1.0A<br>Pte 0.60 yley fl 120 TTT. BOTTOM -1.3A<br>TTT AAR<br>90<br>PA 0.40 ee A S<br>tf NeNee<br>Cee 60 CAREC<br>PLE 0.20 AQT<br>30<br>~ fo. poo SSS<br>FELT 0.00 | A 0 SpoSSST<br>0 3 6 9 12 15 25 50 75 100 125 150<br>-V , Gate-to-Source Voltage (V)GS Starting T , Junction TemperatureJ ( C)°<br>Ω<br>(Normalized)<br>DS(on)<br>R , Drain-to-Source On Resistance<br>Ω<br>AS<br>E , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>
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400 20<br>V = 0V, f = 1MHzGS ID = -2.3A<br>C = C + C , C SHORTEDiss gs gd ds VDS =-10V<br>C = Crss gd<br>T_T] C = C + Coss ds gd 16 PT Ee<br>Pr Pt tt Ni<br>300<br>S s ao) EEE<br>12<br>NE ss Pi TT tT | | VA<br>200<br>po EN Seen<br>8<br>ONT) CU<br>ee ss<br>100<br>TT 4 PY| | tt tt tt<br>Presto} = ERE<br>0 a el A 0 Yi tT [PP]<br>1 10 100 0 2 4 6 8 10<br>-V , Drain-to-Source Voltage (V)DS Q , Total Gate Charge (nC)G<br>Fig 9. Typical Capacitance Vs. Fig 10. Typical Gate Charge Vs.<br>Drain-to-Source Voltage Gate-to-Source Voltage<br> 100<br>art 0.50 aa aaa a a|| mmm TTT TT<br>0.20 AI ee ae<br> 10<br>0.10<br>0.05<br>n 0.02 SH eeeeersne| PDM<br> 1 0.01<br>t1<br>SINGLE PULSE t2<br>> ann (THERMAL RESPONSE) aee<br>Notes:<br>A ee<br>1. Duty factor D = t / t1 2<br>a cum 2. Peak TJ= P DM x Z thJA + TA<br>0.1<br>0.00001 0.0001 0.001 0.01 0.1 1 10 100<br>t , Rectangular Pulse Duration (sec)1<br>C, Capacitance (pF)<br>GS<br>-V , Gate-to-Source Voltage (V)<br>thJA<br>(Z )<br>Thermal Response<br>**----- End of picture text -----**<br>
## SO-8 Package Outline
Dimensions are shown in milimeters (inches)
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INCHES MILLIMETERS<br>DIM<br>D B MIN MAX MIN MAX<br>A 5 A .0532 .0688 1.35 1.75<br>A1 .0040 .0098 0.10 0.25<br>b .013 .020 0.33 0.51<br>8 7 6 5 c .0075 .0098 0.19 0.25<br>janice 6 H ==EEE D .189 .1968 4.80 5.00<br>E 0.25 [.010] A E .1497 .1574 3.80 4.00<br>1 2 3 4<br>e .050 BASIC 1.27 BASIC<br>“Tr —<br>e1 .025 BASIC 0.635 BASIC<br>_ =SE= H .2284 .2440 5.80 6.20<br>K .0099 .0196 0.25 0.50<br>6X e<br>CH oo L .016 .050 0.40 1.27<br>y 0° 8° 0° 8°<br>e1 K x 45°<br>A<br>C<br>y<br>0.10 [.004]<br>8X b A1 8X L 8X c<br>0.25 [.010] C A B 0 7<br>FOOTPRINT<br>NOTES:<br>1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994. 8X 0.72 [.028]<br>2. CONTROLLING DIMENSION: MILLIMETER 4<br>3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].<br>4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.<br>5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.<br> MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].<br>: 6.46 [.255] | Onn<br>6 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.<br>s) MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010]. oan<br>7 DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO<br> A SUBSTRATE.<br>: 3X 1.27 [.050] te 8X 1.78 [.070]<br>**----- End of picture text -----**<br>
## SO-8 Part Marking Information (Lead-Free)
EXAMPLE: THIS IS AN IRF7101 (MOSFET)
XXXX INTERNATIONAL F7101 RECTIFIER LOGO ~~ee~~
DATE CODE (YWW) P = DESIGNATES LEAD-FREE PRODUCT (OPTIONAL) Y = LAST DIGIT OF THE YEAR WW = WEEK A = ASSEMBLY SITE CODE LOT CODE
PART NUMBER
## SO-8 Tape and Reel
Dimensions are shown in milimeters (inches)
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TERMINAL NUMBER 1<br>oO66) fF<br>12.3 ( .484 )<br>11.7 ( .461 )<br>a<br>8.1 ( .318 )<br>7.9 ( .312 ) FEED DIRECTION<br>**----- End of picture text -----**<br>
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
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330.00<br>(12.992)<br> MAX.<br>SY<br>14.40 ( .566 )<br>12.40 ( .488 )<br>**----- End of picture text -----**<br>
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualifications Standards can be found on IR’s Web site.
**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 07/04
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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