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IRF9952TRPBF
Dual MOSFET, Complementary N and P Channel, 30 V, 30 V, 3.5 A, 3.5 A, 0.08 ohm
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Dual MOSFETs
- Transistor Polarity:N and P Channel; Continuous Drain Current Id:3.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.08ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 8Pins
- Channel Type: Complementary N and P Channel
- Product Range: -
- Qualification: -
- Transistor Case Style: SOIC
- Operating Temperature Max: 150°C
- Power Dissipation N Channel: 2W
- Power Dissipation P Channel: 2W
- Drain Source Voltage Vds N Channel: 30V
- Drain Source Voltage Vds P Channel: 30V
- Continuous Drain Current Id N Channel: 3.5A
- Continuous Drain Current Id P Channel: 3.5A
- Drain Source On State Resistance N Channel: 0.08ohm
- Drain Source On State Resistance P Channel: 0.08ohm
| Delivery and price | |
|---|---|
| Units per pack | 2000 |
| Price | 0.254 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
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N-CHANNEL MOSFET<br>S1 1 8 D1<br>G1 “1on 2 | rp 7 oo D1 N-Ch | P-Ch<br>S2 LIT} 3 6 1 [IT] | D2 Vposs| 30V | -30V<br>G2 oh| P-CHANNEL MOSFET4 | 5 = D2 Rosien) 9-10 Ω |0.25 Ω<br>Top View<br>**----- End of picture text -----**<br>
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SO-8<br>**----- End of picture text -----**<br>
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V<br>; ; Ta = 25°C 3.5<br>ID<br>ee<br>Pulsed DrainCurrent tm S10<br>Continuous Source Current (Diode Conduction)<br>. oe . Ta = 25°C 2.0<br>PD<br>i<br>Thermal Resistance Ratings<br>Symbol_| Limit<br>| Units<br>θ<br>**----- End of picture text -----**<br>
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∆ Vierypss_ ∆ Ty |Breakdown Voltage Temp. Coefficient_ |[P-ch|N-Ch| —— |[0.015001 3 — vieCon» | ReferenceReference to to 25°C. 25°C, IpIp == -1mA 1mA<br>n-chL—_| Ves = 10V, Ip = 2.2A ©<br>Rpsion) Staticie Drain-to-SourceDrain-to- On-ResistanceResi Nh oD os, Ω Ves =4.5V, Ip = 1.0A®<br>>ch "— 0.169 0.250 Vas = -10V.Ip=-1.0A ©<br>| — [0.290/0.400 Ves = -4.5V, Ip = -0.50A ©<br>Gate [.N-Ch] 1.0) — | — | Vos = Ves, Ip = 250A<br>We Forward Threshold Transconductance Voliage rp-chl“P-ch/-1.0)— | 241— | — — || SsVY V ogps==c15V Ves. Ip[p= = 250A -23A o<br>Vos = 24V, Ves = OV<br>loss into. | P-ch| — | — | -2.0 | Vps = -24V, Ves = 0V<br>Drain-to-Source Leakage Current rN-chl<br>|P-Ch|— | — | 25 uA Vos = 24V, Vag = OV. T) = 125°C<br>lIess_____| Gate-to-Source Forward Leakage | N-P | —— || —— |[+100]-25 NA | VosVes == -24V, +20V Ves = OV, Ty = 125°C<br>_ TotalTotal Gate Chargeh [.N-Ch]“p-ch|—— | 6.9 | 14 | .<br>|. | 61| 12 | | N-Channel<br>__Gateto-Source Charge “pch|N-Ch] — | 1.0 | 2.0 | Ip= 1.8A, Vos = 10V, Vas = 10V<br>“N-Ch. — 17/34.<br>Qo Gate-to-Drain ("Miller") Charge hen = 18 35 P-channelIp = -2.3A, Vps = -10V, Veg = -10V<br>- ; Vpp= 10V, Ip = 1.0A, Rg = 6.0 Ω,<br>Ω<br>aon Tumorrbeey Tine Poh =a ao) VpppChanne= -10V, Ip =-1.0A,Rg =6.0 Ω ,<br>tr Fall Time |.N-Ch| — | 3.0 | 6.0 | Ro 10 Ω<br>| P-Ch| — | 6.9 | 14 | P<br>Input ; |.N-Ch| — | 190) — | N-Channel<br>Capacitance “p-ch|<br>Output Capacitance P-chl — 1110| P-Channel<br>[ConsCoss [OutputCapaciance Bent — |toa 190| — |_| Ves=OV, Vos= 15V, f= 1.0MHz<br>Reverse Transfer Capacitance [Nc] — | 61 | Vas = OV, Vos = -15V, f = 1.0MHz<br>Source-Drain Ratings and Characteristics<br>Parameter || ain. Typ. | vax. | Units Conditions<br>Continuous Source Current (Body Diode) [s-cr} =f — 47) A<br>Pulsed Source Current (Body Diode) © eeeN-Ch<br>Diode; N-Ch| — |0.82]1.2 | Ty = 25°C, Is = 1.25A, Vas = OV ©<br> Forward Voltage P-ch) — |-0.82| -12| “ | T= 28°C, Ig=-1.26A, Veg = OVO<br>. N-Ch| — | 27 | 53 | N-Channel<br>tir Reverse Recovery Time P-Ch| — | 27 | 54 | ns Ty = 25°C, Ip =1.25A, di/dt = 100A/us<br>Qr N-Ch] — | 28 | 57 | P-Channel<br>Reverse Recovery Charge P-Ch| — | 31 | 62 nc Ty = 25°C, Ip =-1.25A, di/dt =<br>Notes:<br>Repetitive rating, pulse width limited by @ Pulse width ≤ 300s; duty cycle ≤ 2%.<br>max. junction temperature. ( See fig. 23)<br>N-Channel ISD ≤ 2.0A, di/dt ≤ 100A/us, Vpp ≤ Vierypss, Ty ≤ 150°C © Surface mounted on FR-4 board, t ≤<br>P-Channel ISD ≤ -1.3A, di/dt ≤ 84A/us, Vopp ≤ V(BR)DSS: Ty ≤ 150°C<br> N-Channel Starting Ty = 25°C, L = 22MH Rg= 25 Ω , lag = 2.0A. (See Figure 12)<br>P-Channel Starting Ty = 25°C, L=67mH Rg= 25 Ω , las =-1.3A.<br>**----- End of picture text -----**<br>
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100<br> TOP 15V<br> 10V<br> 7.0V<br> 5.5V<br> 4.5V ee esti<br> 4.0V<br> 3.5V<br> BOTTOM 3.0V<br>10 Oi<br>| Off |_ _<br>VYfv . | 3.0V |<br> T = 25°CJ<br>1<br>0.1 1 10<br>V , Drain-to-Source Voltage (V)DS<br>I , Drain-to-Source Current (A)D<br>**----- End of picture text -----**<br>
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100<br> TOP 15V<br> 10V<br> 7.0V<br> 5.5V<br> 4.5V ee esti<br> 4.0V<br> 3.5V<br> BOTTOM 3.0V<br>10 PO<br>|<br> 3.0V<br>| 7 [f] |Y [Ke] - f/ =<br> T = 150°CJ<br>1<br>0.1 1 10<br>V , Drain-to-Source Voltage (V)DS<br>D<br>I , Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>
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100 100<br>10<br>P flypf ypdE}fp E| ee|bar<br>10 T = 25°CJ T = 150°CJ<br>| | T = 150°C ee J e AS E<br>| |e O T / T = 25°CJ =<br>an a oe 1 [ , |<br>| ny ee eee eee eee<br>1 V = 10V 2ous DS PULSE WIDTH A 0.1 |PAfF |ftaeee}fl<br>3.0 3.5 4.0 4.5 5.0 5.5 6.0 0.4 0.6 0.8 1.0 1.2 1.4<br>V , Gate-to-Source Voltage (V)GS V , Source-to-Drain Voltage (V)SD<br>I , Reverse Drain Current (A)SD<br>D<br>I , Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>
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2.0 0.12<br>ID = 2.2A<br>e e eee<br>1.5 0.10<br>PUPPET e fp | | | yy<br>Bai sal B<br>AT eT e$ | [Lier] "*)<br>1.0 0.08<br>VE et | yt tf<br>Er -<br>eleeee eeee<br>0.5 0.06<br>PUT eee<br>H e VGS = 10V<br>0.0 0.04<br>-60 -40 -20 0 20 40 60 80 100 120 140 160 0 2 4 6 8 10 12<br>T , Junction TemperatureJ ( C)°<br>I , Drain Current (A)D<br>Fig 5. Normalized On-Resistance Fig 6. Typical On-Resistance Vs. Drain<br>Vs. Temperature Current<br>0.16 100 ID<br>TOP 0.89A<br>0.14 1.6A<br>Pe 80 A BOTTOM 2.0A<br>0.12<br>0.10 60<br>: {+++ |<br>s 0.08 [| [\; [| EN<br>es ee eS 40 KN |<br>ys 0.06 re ee eee ee SON Xt N<br>Se PAK<br>0.04<br>a Sao oe 20 EE SAO SN<br>0.02<br>e EEL PAS<br>ee 0.00 eei A 0 ESS<br>0 3 6 9 12 15 25 50 75 100 125 150<br>V , Gate-to-Source Voltage (V)GS Starting T , Junction Temperature (°C)J<br>Ω<br>(Normalized)<br>DS(on)<br>R , Drain-to-Source On Resistance<br>Ω<br>AS<br>E , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>
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350 V = 0V, f = 1MHzGS 20 ID = 1.8A<br>300 C = C + C , C SHORTEDC = Ciss gs gd dsrss gd VDS = 10V<br>c C = C + Coss ds gd ece 16<br>250 ne P P P<br>s<br>200 ss 12<br>PRC ptt t | | | | lM<br>150 > “NE GREASE<br>8<br>100 SX} ss oe 4<br>4<br>50 PSS EveHA<br>0 SS A 0 Yi tit | |} fh<br>1 10 100 0 2 4 6 8 10<br>V , Drain-to-Source Voltage (V)DS Q , Total Gate Charge (nC)G<br>Fig 9. Typical Capacitance Vs. Fig 10. Typical Gate Charge Vs.<br>Drain-to-Source Voltage Gate-to-Source Voltage<br> 100 Sect 0.50 eres SE eiiil memert eee Screen<br>0.20<br>c ere<br> 10<br>0.10 ————— oOtit<br>0.05 BF<br>0.02 PDM<br>atl<br> 1 0.01<br>—= gonea esaa mat t1<br>>a SINGLE PULSE a t2<br>(THERMAL RESPONSE)<br>Notes:<br>1. Duty factor D = t / t1 2<br>2. Peak TJ = P DM x ZthJA + TA<br>0.1<br>0.00001 e f 0.0001 0.001 i 0.01 m a 0.1 1 10 100<br>t , Rectangular Pulse Duration (sec)1<br>C, Capacitance (pF)<br>GS<br>V , Gate-to-Source Voltage (V)<br>thJA<br>(Z )<br>Thermal Response<br>**----- End of picture text -----**<br>
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100 100<br> TOP - 15V Sass anes TOP - 15V —E<br> - 10V - 10V<br> - 7.0V - 7.0V<br> - 5.5V - 5.5V<br> - 4.5V - 4.5V<br> - 4.0V - 4.0V<br> - 3.5V - 3.5V<br> BOTTOM - 3.0V BOTTOM - 3.0V<br>10 pe 10 i ati<br>A),<br>| OG | LLG<br>| fi — ge<br>1 1 | Ge —<br>|_ [f][=] a -3.0V<br> -3.0V<br>IU- | — FEC— |jGL h<br>0.1 A T = 25°CJ A 0.1 \ T = 150°CJ<br>0.1 1 10 0.1 1 10<br>| nerf Z| T sr<br>-V , Drain-to-Source Voltage (V)DS -V , Drain-to-Source Voltage (V)DS<br>D D<br>-I , Drain-to-Source Current (A) -I , Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>
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100 ee ee eee eee eee 100 a<br>ee eee ee ee ee ee ee eee eee eee eee<br>ee es es ee<br>10 10<br>Sa T = 25°CJ eee eee —— T = 150°CJ<br>ee ee eee ae s<br>a T = 150°CJ a<br>T = 25°CJ<br>1 A tt } 1 eeEi ee, As ee 4 eegee<br>pf Ss<br>fe,<br> V = -10VDS<br>0.1 FtLE oscusewomd20us PULSE WIDTHE A = 0.1 a EZ PPoe<br>3.0 4.0 5.0 6.0 7.0 8.0 0.4 0.6 0.8 1.0 1.2 1.4<br>-V , Gate-to-Source Voltage (V)GS -V , Source-to-Drain Voltage (V)SD<br>SD<br>-I , Reverse Drain Current (A)<br>D<br>-I , Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>
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2.0 2.5<br>ID = -1.0A<br>P ons 2.0 +44++---H-H4<br>F U<br>1.5 BU Pu ao<br>TEOTOQTO0U000022 <410 at Om 1.5 inn i<br>ea) 7 abe<br>1.0<br>TTT| LTT | 22 1.0<br>TTT gf<br>0.5<br>0.5<br>rPEPEPEEEECECEETCTETE] ee<br>§ | —ov<br>an e VGS = -10V eto |<br>0.0 ee 0.0 le ee ee<br>-60 -40 -20T , Junction TemperatureJ 0 20 40 60 80 100( C)°120 140 160 0.0 1.0 2.0 3.0 4.0 5.0<br>-I , Drain Current (A)D<br>Ω<br>(Normalized)<br>DS(on)<br>R , Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>
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0.80 150<br>ID<br>TOP -0.58A<br>-1.0A<br>& 120 BOTTOM -1.3A<br>0.60<br>PPue ee} RE PL<br>90<br>PPA PP] ALL<br>PE 0.40 A<br>®o EP RNG<br>60<br>rotor 2 N O NALNN TL<br>PLEIN 0.20<br>~ to oteETPy] 30 AATOSSSO<br>LE} 0.00 | | | A 0 PE SS<br>0 3 6 9 12 15 25 50 75 100 125 150<br>Starting T , Junction TemperatureJ ( C)°<br>-V , Gate-to-Source Voltage (V)GS<br>Ω<br>AS<br>E , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>
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400 20<br>V = 0V, f = 1MHzGS ID = -2.3A<br>C = C + C , C SHORTEDiss gs gd ds VDS =-10V<br>C = Crss gd<br>To) C = C + Coss ds gd 16 ETE<br>300<br>pL Seeeeeeeee<br>s<br>12<br>ss<br>200 NS) HE<br>| CCEA<br>8<br>NN Pi tT TT A tt<br>100 ss NO Sane ennee<br>4<br>PSE eee<br>0 a—_el A 0 PYtYi tit| tt ttPr|<br>1 10 100 0 2 4 6 8 10<br>-V , Drain-to-Source Voltage (V)DS Q , Total Gate Charge (nC)G<br>Fig 20. Typical Capacitance Fig 21. Typical Gate Charge Vs.<br>Vs. Gate-to-Source Voltage<br>Drain-to-Source Voltage<br> 100 SS<br>0.50<br>| e 0.20 r<br> 10<br>0.10<br>= e e<br>0.05<br>Seat eee tiil! atti tm oe mT<br>0.02 PDM<br>meet<br> 1 0.01<br>pea CC Co CIE CP t1<br>= Se<br>as SINGLE PULSE t2<br>(THERMAL RESPONSE)<br>Notes:<br>See— aa| 1. Duty factor D = t / t1 2<br>2. Peak TJ = P DM x ZthJA + TA<br>0.1 ETT PTT TY PT<br>0.00001 0.0001 0.001 0.01 0.1 1 10 100<br>t , Rectangular Pulse Duration (sec)1<br>C, Capacitance (pF)<br>GS<br>-V , Gate-to-Source Voltage (V)<br>thJA<br>(Z )<br>Thermal Response<br>**----- End of picture text -----**<br>
## **SO-8 Package Details**
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INCHES MILLIMETERS<br>DIM<br>D B MIN MAX MIN MAX<br>I a |a<br>A 5 A .0532 .0688 1.35 1.75<br>A1 .0040 .0098 0.10 0.25<br>ii i b .013 .020 0.33 0.51<br>ia 6 8 7 6 5 H aa Dc .189.0075 .0098.1968 0.194.80 0.255.00<br>E<br>0.25 [.010] A E .1497 .1574 3.80 4.00<br>1 2 3 4<br>e .050 BASIC 1.27 BASIC<br>| ee<br>| ee e1 .025 BASIC 0.635 BASIC<br>a H .2284 .2440 5.80 6.20<br>K .0099 .0196 0.25 0.50<br>6X me e a L .016 .050 0.40 1.27<br>ia y 0° 8° 0° 8°<br>4eL) e1 | A "| K x 45°<br>C<br>y<br>0.10 [.004]<br>JL 8X b a A1 Lalel 1.NL 8X L 8X c —:<br>0.25 [.010] C A B 7<br>FOOTPRINT<br>NOTES:<br>1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994. 8X 0.72 [.028]<br>2. CONTROLLING DIMENSION: MILLIMETER<br>3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].<br>4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.<br>5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.<br>| QOOC<br> MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].<br>6.46 [.255]<br>6 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.<br> MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010]. | |<br>7 DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO<br> A SUBSTRATE.<br>00004<br>3X 1.27 [.050]<br>8X 1.78 [.070]<br>**----- End of picture text -----**<br>
## NOTES:
1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.
2. CONTROLLING DIMENSION: MILLIMETER 3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES]. 4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA. 5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.
O MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006]. 6 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.
'S MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010]. 7 DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE.
;
## **SO-8 Part Marking**
EXAMPLE: THIS IS AN IRF7101 (MOSFET)
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-_ Tar PYWWA XXXX<br>INTERNATIONAL F7101<br>RECTIFIER<br>LOGO<br>**----- End of picture text -----**<br>
DATE CODE (YWW) P = DESIGNATES LEAD-FREE PRODUCT (OPTIONAL) Y = LAST DIGIT OF THE YEAR WW = WEEK A = ASSEMBLY SITE CODE LOT CODE
PART NUMBER
## **SO-8 Tape & Reel Information**
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TERMINAL NUMBER 1<br>12.3 ( .484 )<br>11.7 ( .461 )<br>8.1 ( .318 )<br>7.9 ( .312 ) FEED DIRECTION<br> 330.00<br>(12.992)<br> MAX.<br>14.40 ( .566 )<br>12.40 ( .488 )<br>**----- End of picture text -----**<br>
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NOTES:<br>**----- End of picture text -----**<br>
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 06/05
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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