IRF9610SPBF

**IRF9610S, SiHF9610S** 

~~—~~ www.vishay.com 

Vishay Siliconix 

## **Power MOSFET** 

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S<br>D [2] PAK (TO-263)<br>G<br>G [D]<br>S D<br>P-Channel MOSFET<br>**----- End of picture text -----**<br>


## **FEATURES** 

- Surface-mount 

- Available in tape and reel 

- Dynamic dV/dt rating 

Available Available 

- P-channel 

- Fast switching 

- Ease of paralleling 

- Simple drive requirements 

- Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 

**Note** 

|**PRODUCT SUMMARY**|**PRODUCT SUMMARY**|**PRODUCT SUMMARY**|
|---|---|---|
|VDS(V)|-200||
|RDS(on)(Ω)|VGS= -10 V|3|
|Qgmax. (nC)|11||
|Qgs(nC)|7||
|Qgd(nC)|4||
|Configuration|Single||



- This    datasheet    provides    information    about    parts    that    are RoHS-compliant and / or parts that are non RoHS-compliant.  For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details 

## **DESCRIPTION** 

Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. 

The D[2] PAK (TO-263) is a surface-mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface-mount package. The D[2] PAK (TO-263) is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2 W in a typical surface mount application. 

## **ORDERING INFORMATION** 

|Package|D2PAK (TO-263)|
|---|---|
||SiHF9610S-GE3|
|Lead (Pb)-free and Halogen-free|SiHF9610STRR-GE3|
||SiHF9610STRL-GE3|
||IRF9610SPbF|
|Lead (Pb)-free|IRF9610STRRPbF|
||IRF9610STRLPbF|



~~pT~~ **ABSOLUTE MAXIMUM RATINGS** (TC = 25 °C, unless otherwise noted) ~~a~~ **PARAMETER SYMBOL LIMIT UNIT** Drain-Source Voltage ~~a~~ VDS -200 V ~~a~~ Gate-Source Voltage VGS ± 20 TC = 25 °C -1.8 Continuous Drain Current VGS at -10 V ID ~~a~~ TC = 100 °C -1 A ~~a~~ Pulsed Drain Current[a] ~~ee~~ IDM -7 Linear Derating Factor 0.16 W/°C Linear Derating Factor (PCB mount)[ d] 0.025 Maximum Power Dissipation TC = 25 °C 20 Maximum Power Dissipation (PCB mount)[ d] TA = 25 °C PD 3 W ~~a~~ Peak Diode Recovery dV/dt[b] dV/dt -5 V/ns Operating Junction and Storage Temperature Range TJ, Tstg -55 to +150 °C ~~a~~ Soldering Recommendations (Peak temperature)[c] For 10 s 300 **Notes** a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 5) b. ISD ≤ -1.8 A, dI/dt ≤ 70 A/μs, VDD ≤ VDS, TJ ≤ 150 °C c. 1.6 mm from case 

d. When mounted on 1" square PCB (FR-4 or G-10 material) 

S21-0904-Rev. E, 30-Aug-2021 **1** For technical questions, contact: hvm@vishay.com 

Document Number: 91081 

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**IRF9610S, SiHF9610S** 

www.vishay.com 

Vishay Siliconix 

|**THERMAL RESISTANCE RATINGS**|**THERMAL RESISTANCE RATINGS**|**THERMAL RESISTANCE RATINGS**|**THERMAL RESISTANCE RATINGS**|**THERMAL RESISTANCE RATINGS**|
|---|---|---|---|---|
|**PARAMETER**|**SYMBOL**|**TYP.**|**MAX.**|**UNIT**|
|Maximum Junction-to-Ambient|RthJA|-|62|°C/W|
|Maximum Junction-to-Ambient<br>(PCB mount)a|RthJA|-|40||
|Maximum Junction-to-Case (Drain)|RthJC|-|6.4||



## **Note** 

a. When mounted on 1" square PCB (FR-4 or G-10 material) 

|**SPECIFICATIONS**(TJ= 25 °C,unless otherwise noted)|**SPECIFICATIONS**(TJ= 25 °C,unless otherwise noted)|**SPECIFICATIONS**(TJ= 25 °C,unless otherwise noted)|**SPECIFICATIONS**(TJ= 25 °C,unless otherwise noted)|||||
|---|---|---|---|---|---|---|---|
|**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**||**MIN.**|**TYP.**|**MAX.**|**UNIT**|
|**Static**||||||||
|Drain-Source Breakdown Voltage|VDS|VGS= 0, ID= -250 μA||-200|-|-|V|
|VDSTemperature Coefficient|ΔVDS/TJ|Reference to 25 °C, ID= -1 mA||-|-0.23|-|V/°C|
|Gate-Source Threshold Voltage|VGS(th)|VDS= VGS, ID= -250 μA||-2|-|-4|V|
|Gate-Source Leakage|IGSS|VGS= ± 20 V||-|-|± 100|nA|
|Zero Gate Voltage Drain Current|IDSS|VDS= -200 V, VGS= 0 V||-|-|-100|μA|
|||VDS= -160 V, VGS= 0 V, TJ= 125 °C||-|-|-500||
|Drain-Source On-State Resistance|RDS(on)|VGS= -10 V|ID= -0.90 Ab|-|-|3|Ω|
|Forward Transconductance|gfs|VDS= -50 V, ID= -0.90 Ab||0.90|-|-|S|
|**Dynamic**||||||||
|Input Capacitance|Ciss|VGS= 0 V,<br>VDS= -25 V,<br>f = 1 MHz, see fig. 10||-|170|-|pF|
|Output Capacitance|Coss|||-|50|-||
|Reverse Transfer Capacitance|Crss|||-|15|-||
|Total Gate Charge|Qg|VGS= -10 V|ID= -3.5 A, VDS= -160 V,<br>see fig. 11 and 18b|-|-|11|nC|
|Gate-Source Charge|Qgs|||-|-|7||
|Gate-Drain Charge|Qgd|||-|-|4||
|Turn-On Delay Time|td(on)|VDD= -100 V, ID= -0.90 A,<br>RG= 50Ω, RD= 110Ω, see fig. 17b||-|8|-|ns|
|Rise Time|tr|||-|15|-||
|Turn-Off Delay Time|td(off)|||-|1|-||
|Fall Time|tf|||-|8|-||
|Gate Input Resistance|Rg|f = 1 MHz, open drain||2.5|-|14.3|Ω|
|Internal Drain Inductance|LD|Between lead,<br>6 mm (0.25") from<br>package and center of<br>die contact<br>D<br>S<br>G||-|4.5|-|nH|
|Internal Source Inductance|LS|||-|7.5|-||
|**Drain-Source Body Diode Characteristics**||||||||
|Continuous Source-Drain Diode Current|IS|MOSFET symbol<br>showing the<br>integral reverse<br>p - n junction diode<br>S<br>D<br>G||-|-|-1.8|A|
|Pulsed Diode Forward Currenta|ISM|||-|-|-7||
|Body Diode Voltage|VSD|TJ= 25 °C, IS= -1.8 A, VGS= 0 Vb||-|-|-5.8|V|
|Body Diode Reverse Recovery Time|trr|TJ= 25 °C, IF= -1.8 A, dI/dt = 100 A/μsb||-|240|360|ns|
|Body Diode Reverse Recovery Charge|Qrr|||-|1.7|2.6|μC|
|Forward Turn-On Time|ton|Intrinsic turn-on time is negligible (turn-on is dominated by LSand LD)||||||



## **Notes** 

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 5) 

b. Pulse width ≤ 300 μs; duty cycle ≤ 2 % 

S21-0904-Rev. E, 30-Aug-2021 

Document Number: 91081 

**2** 

For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**IRF9610S, SiHF9610S** 

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www.vishay.com<br>**----- End of picture text -----**<br>


## Vishay Siliconix 

## **TYPICAL CHARACTERISTICS** (25 °C, unless otherwise noted) 

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- 2.40<br>VGS = - 10, - 9, - 8, - 7 V<br>- 1.92<br>- 1.44 - 6 V<br>- 0.96<br>- 5 V<br>- 0.48<br>80 µs Pulse Test - 4 V<br>0.00<br>0 - 10 - 20 - 30 - 40 - 50<br>91081_01 VDS, Drain-to-Source Voltage (V)<br>, Drain Current (A)<br>ID<br>**----- End of picture text -----**<br>


**Fig. 1 - Typical Output Characteristics** 

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- 2.40<br>VGS = - 10, - 9, - 8 V - 7 V<br>- 1.92<br>- 1.44 - 6 V<br>- 0.96<br>- 5 V<br>- 0.48<br>80 µs Pulse Test<br>- 4 V<br>0.00<br>0 - 2 - 4 - 6 - 8 - 10<br>91081_03 VDS, Drain-to-Source Voltage (V)<br>, Drain Current (A)<br>ID<br>**----- End of picture text -----**<br>


**Fig. 3 - Typical Saturation Characteristics** 

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- 2.40<br>T J = - 55 °C<br>- 1.92 T J = 25 °C<br>- 1.44 TJ = 125 °C<br>- 0.96<br>- 0.48<br>80 µs Pulse Test<br>VDS > ID(on) x RDS(on) max.<br>0.00<br>0 - 2 - 4 - 6 - 8 - 10<br>91081_02 VGS, Gate-to-Source Voltage (V)<br>, Drain Current (A)<br>ID<br>**----- End of picture text -----**<br>


**Fig. 2 - Typical Transfer Characteristics** 

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10 [2]<br>Operation in this area limited<br>5 by RDS(on)<br>2<br>10<br>5<br>100 µs<br>2<br>1 1 ms<br>5<br>TC = 25  ° C 10 ms<br>2 T J  = 150  ° C<br>Single Pulse<br>0.1<br>1 2 5 10 2 5 10 [2] 2 5 10 [3]<br>91081_04 Negative VDS, Drain-to-Source Voltage (V)<br>, Drain Current (A)<br>D<br>Negative I<br>**----- End of picture text -----**<br>


**Fig. 4 - Maximum Safe Operating Area** 

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2.0<br>1.0<br>0.5 D = 0.5<br>0.2 0.2 PDM<br>0.1<br>0.1 t1<br>0.05 0.05 t2<br>Notes:<br>0.02 0.020.01 Single Pulse (TransientThermal Impedence) 1.  Duty Factor, D = t 2.  Per Unit Base = R 1thJC /t2 = 6.4 °C/W<br>3.  TJM - TC = PDM ZthJC(t)<br>0.01<br>10 [-5] 2 5 10 [-4] 2 5 10 [-3] 2 5 10 [-2] 2 5 0.1 2 5 1.0 2 5 10<br>91081_05 t1, Square Wave Pulse Duration (s)<br> Fig. 5 - Maximum Effective Transient Thermal Impedance, Junction-to.Case vs. Pulse Duration<br>Normalized Effective Transie<br>thJC,<br>(t)/R<br>thJC<br>Z<br>Thermal Impedence (Per Unit)<br>**----- End of picture text -----**<br>


S21-0904-Rev. E, 30-Aug-2021 

Document Number: 91081 

**3** 

For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**IRF9610S, SiHF9610S** 

Vishay Siliconix 

## www.vishay.com 

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2.0<br>80 µs Pulse Test<br>VDS > ID(on) x RDS(on) max.<br>1.6<br>TJ = - 55 °C<br>1.2 TJ = 25 °C<br>TJ = 125 °C<br>0.8<br>0.4<br>0.0<br>0 - 0.48 - 0.96 - 1.44 - 1.92 - 2.40<br>91081_06 ID, Drain Current (A)<br>,Transconductance (S)<br>fs<br>g<br>**----- End of picture text -----**<br>


**Fig. 6 - Typical Transconductance vs. Drain Current** 

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2.5<br>ID = - 0.6 A<br>V GS = - 10 V<br>2.0<br>1.5<br>1.0<br>0.5<br>0.0<br>- 40 0 40 80 120 160<br>91081_09 TJ, Junction Temperature (°C)<br>(Normalized)<br>, Drain-to-Source On Resistance<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


**Fig. 9 - Normalized On-Resistance vs. Temperature** 

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- 10.0 500<br>VGS = 0 V, f = 1 MHz<br>- 5.0 400 C Ciss rss = C = Cgs gd + C gd , C ds  Shorted<br>Coss = Cds + C [C] gs [g][s]  + C [, C] [g][d] gd<br>- 2.0 300 ≈ Cgs + Cgd<br>- 1.0<br>- 0.5 TJ = 150 °C T J  = 25  ° C 200 Ciss<br>C oss<br>100<br>- 0.2 Crss<br>- 0.1 0<br>- 2.0 - 3.2 - 4.4 - 5.6 - 6.8 - 8.0 0 - 10 - 20 - 30 - 40 - 50<br>91081_07 VSD, Source-to-Drain Voltage (V) 91081_10 VDS, Drain-to-Source Voltage (V)<br> Fig. 7 - Typical Source-Drain Diode Forward Voltage<br> Fig. 10 - Typical Capacitance vs. Drain-to-Source Voltage<br>1.25<br>20<br>ID = - 1.8 A<br>1.15 VDS = - 100 V<br>16<br>VDS = - 60 V<br>1.05<br>VDS = - 40 V<br>12<br>0.95<br>8<br>0.85<br>4<br>For test circuit<br>0.75<br>- 40 0 40 80 120 160 0 see figure 18<br>0 2 4 6 8<br>91081_08 TJ, Junction Temperature (°C)<br>91081_11 QG, Total Gate Charge (nC)<br>, Drain Current (A)<br>ID C, Capacitance (pF)<br>Voltage (Normalized) , Gate-to-Source Voltage (V)<br>, Drain-to-Source Breakdown<br>GS<br>DSS<br>BV<br>Negative V<br>**----- End of picture text -----**<br>


**Fig. 10 - Typical Capacitance vs. Drain-to-Source Voltage** 

**Fig. 8 - Breakdown Voltage vs. Temperature** 

**Fig. 11 - Typical Gate Charge vs. Gate-to-Source Voltage** 

S21-0904-Rev. E, 30-Aug-2021 

Document Number: 91081 

**4** 

For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**IRF9610S, SiHF9610S** 

www.vishay.com 

Vishay Siliconix 

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**----- Start of picture text -----**<br>
7<br>RDS(on) measured with current pulse of<br>6 2.0 µs duration.  Initial T J  = 25 °C.<br>(Heating effect of 2.0 µs pulse is minimal.)<br>5<br>VGS = - 10 V<br>4<br>3<br>VGS = - 20 V<br>2<br>1<br>0<br>0 - 1 - 2 - 3 - 4 - 5 - 6 - 7<br>91081_12 ID, Drain Current (A)<br> Fig. 12 - Typical On-Resistance vs. Drain Current<br>2.0<br>1.6<br>1.2<br>0.8<br>0.4<br>0.0<br>25 50 75 100 125 150<br>91081_13 TC, Case Temperature (°C)<br>)Ω<br>, Drain-to-Source<br>On Resistance (<br>DS(on)<br>R<br>, Drain Current (A)<br>D<br>Negative I<br>**----- End of picture text -----**<br>


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L<br>Vary tp to obtain<br>required IL<br>VDS VDD -<br>D.U.T. +<br>VGS = - 10 V tp EC<br>0.05 Ω<br>IL<br>VDD = 0.5 VDS EC = 0.75 VDS<br>**----- End of picture text -----**<br>


**Fig. 15 - Clamped Inductive Test Circuit** 

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VDD<br>IL<br>tp VDS<br>EC<br>**----- End of picture text -----**<br>


**Fig. 16 - Clamped Inductive Waveforms** 

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RD<br>VDS<br>VGS<br>D.U.T.<br>R<br>g +- VDD<br>- 10 V<br>Pulse width ≤ 1 µs<br>Duty factor ≤ 0.1 %<br>**----- End of picture text -----**<br>


**Fig. 17a - Switching Time Test Circuit** 

**Fig. 13 - Maximum Drain Current vs. Case Temperature** 

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20<br>15<br>10<br>5<br>0<br>0 20 40 60 80 100 120 140<br>91081_14 TC, Case Temperature (°C)<br>, Power Dissipation (W)<br>D<br>P<br>**----- End of picture text -----**<br>


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td(on) tr td(off) tf<br>VGS<br>10 %<br>90 %<br>VDS<br>**----- End of picture text -----**<br>


**Fig. 17b - Switching Time Waveforms** 

**Fig. 14 - Power vs. Temperature Derating Curve** 

S21-0904-Rev. E, 30-Aug-2021 

Document Number: 91081 

**5** For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**IRF9610S, SiHF9610S** 

## www.vishay.com 

## Vishay Siliconix 

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**----- Start of picture text -----**<br>
Current regulator<br>Same type as D.U.T.<br>QG 50 kΩ<br>- 10 V 12 V 0.2 µF<br>0.3 µF<br>QGS QGD -<br>D.U.T. + VDS<br>VG VGS<br>- 3 mA<br>Charge<br>IG ID<br>Current sampling resistors<br>**----- End of picture text -----**<br>


## **Fig. 18a - Basic Gate Charge Waveform** 

**Fig. 18b - Gate Charge Test Circuit** 

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Peak Diode Recovery dV/dt Test Circuit<br>**----- End of picture text -----**<br>


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D.U.T.<br>+ Circuit layout considerations<br>• Low stray inductance<br>• Ground plane<br>• Low leakage inductance<br>current transformer<br>-<br>+<br>-<br>Rg • dV/dt controlled by Rg +<br>• • ID.U.T. - device under testSD controlled by duty factor “D” - VDD<br>Note<br>• Compliment N-Channel of D.U.T. for driver<br>- +<br>**----- End of picture text -----**<br>


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Driver gate drive<br>Period D = P.W.<br>P.W. Period<br>VGS = - 10 V [a]<br>D.U.T. lSD waveform<br>Reverse<br>recovery Body diode forward<br>current current<br>dI/dt<br>D.U.T. VDS waveform<br>Diode recovery<br>dV/dt<br>VDD<br>Re-applied<br>voltage<br>Body diode forward drop<br>Inductor current<br>Ripple ≤ 5 % ISD<br>Note<br>a. VGS = - 5 V for logic level and - 3 V drive devices<br>**----- End of picture text -----**<br>


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 Fig. 19 - For P-Channel<br>**----- End of picture text -----**<br>


_Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91081._ 

Document Number: 91081 

S21-0904-Rev. E, 30-Aug-2021 

**6** 

For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**Package Information** 

**==> picture [60 x 50] intentionally omitted <==**

## Vishay Siliconix 

## **TO-263AB (HIGH VOLTAGE)** 

|L1<br>L2<br>D<br>4<br>(Datum A|L1<br>L2<br>D<br>4<br>(Datum A|L1<br>L2<br>D<br><br>(Datum A|L1<br>L2<br>D<br><br>(Datum A|)|3<br>|4|4|4|4|4|4|4|4|4|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
||||||E<br><br>||||||||||
||||1||4||||||||||
||||D||1<br>2<br>C|3<br><br>C|||||||||
||||2||**B**<br>e||||||||||
|||||**B**|||||||||||
|||||2 x|||||||||||
||||||||||||||||
||||||||||||||||
||||||||||||||||
|||||Lead tip||||Section B - B and C - C<br>Scale: none|||||||
||||||||||||||||
||||**MILLIMETERS**||||**INCHES**<br>**MIN.**<br>**MAX.**<br>0.160<br>0.190<br>0.000<br>0.010<br>0.020<br>0.039<br>0.020<br>0.035<br>0.045<br>0.070<br>0.045<br>0.068<br>0.015<br>0.029<br>0.015<br>0.023<br>0.045<br>0.065<br>0.330<br>0.380||||**MILLIMETERS**||**INCHES**||
|**DIM.**|**MIN.**||||**MA**|**X.**|**MIN.**|||**DIM.**|**MIN.**|**MAX.**|**MIN.**|**MAX.**|
|A|4.06||||4.8|3|0.160|||D1|6.86|-|0.270|-|
|A1|0.00||||0.2|5|0.000|||E|9.65|10.67|0.380|0.420|
|b|0.51||||0.9|9|0.020|||E1|6.22|-|0.245|-|
|b1|0.51||||0.8|9|0.020|||e|2.54 BSC||0.100 BSC||
|b2|1.14||||1.7|8|0.045|||H|14.61|15.88|0.575|0.625|
|b3|1.14||||1.7|3|0.045|||L|1.78|2.79|0.070|0.110|
|c|0.38||||0.7|4|0.015|||L1|-|1.65|-|0.066|
|c1|0.38||||0.5|8|0.015|||L2|-|1.78|-|0.070|
|c2|1.14||||1.6|5|0.045|||L3|0.25 BSC||0.010 BSC||
|D|8.38||||9.6|5|0.330|||L4|4.78|5.28|0.188|0.208|
|ECN: S-82110-Rev. A, 15-Sep-08<br>DWG: 5970|||||||||||||||



ECN: S-82110-Rev. A, 15-Sep-08 DWG: 5970 

## **Notes** 

1. Dimensioning and tolerancing per ASME Y14.5M-1994. 

2. Dimensions are shown in millimeters (inches). 

3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body at datum A. 

4. Thermal PAD contour optional within dimension E, L1, D1 and E1. 

5. Dimension b1 and c1 apply to base metal only. 

6. Datum A and B to be determined at datum plane H. 

7. Outline conforms to JEDEC outline to TO-263AB. 

Document Number: 91364 Revision: 15-Sep-08 

www.vishay.com 

1 

**AN826** 

## **Vishay Siliconix** 

## RECOMMENDED MINIMUM PADS FOR D[2] PAK:  3-Lead 

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0.420<br>(10.668)<br>mil<br>0.145<br>(3.683)<br>0.135<br>(3.429)<br>0.200 0.050<br>| rt<br>— (5.080) (1.257)<br>Recommended Minimum Pads<br>Dimensions in Inches/(mm)<br>0.355 (9.017)<br>0.635<br>(16.129)<br>**----- End of picture text -----**<br>


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Document Number:   73397 11-Apr-05 

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**1** 

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## **Disclaimer** 

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. 

Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer's technical experts. Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein. 

Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of any of the products, services or opinions of the corporation, organization or individual associated with the third-party website. Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website or for that of subsequent links. 

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. 

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. 

_**© 2021 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED**_ 

Revision: 09-Jul-2021 

Document Number: 91000 

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