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IRF9389TRPBF
Dual MOSFET, Complementary N and P Channel, 30 V, 30 V, 6.8 A, 6.8 A, 0.022 ohm
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- Manufacturer: INFINEON
- Product type: Dual MOSFETs
- SVHC: No SVHC (21-Jan-2025)
- No. of Pins: 8Pins
- Channel Type: Complementary N and P Channel
- Product Range: HEXFET Series
- Qualification: -
- Transistor Case Style: SOIC
- Operating Temperature Max: 150°C
- Power Dissipation N Channel: 2W
- Power Dissipation P Channel: 2W
- Drain Source Voltage Vds N Channel: 30V
- Drain Source Voltage Vds P Channel: 30V
- Continuous Drain Current Id N Channel: 6.8A
- Continuous Drain Current Id P Channel: 6.8A
- Drain Source On State Resistance N Channel: 0.022ohm
- Drain Source On State Resistance P Channel: 0.022ohm
| Delivery and price | |
|---|---|
| Units per pack | 12000 |
| Price | 0.122 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
||**N-CH**|**P-CH**||
|---|---|---|---|
|**VDS**|**30**|**-30**|**V**|
|**RDS(on) max**|**27**|**64**|**m**|
|**Qg (typical)**|**6.8**|**8.1**|**nC**|
|**g(yp)**<br>**ID **<br>(@TA= 25°C)|**6.8**|**-4.6**|**A**|
HEXFET[®] Power MOSFET
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N-CHANNEL MOSFET<br>S1 1 8 D1<br>G1 2 7 D1<br>a Ca t re<br>S2 3 6 D2<br>G2 at 4 5 D2<br>P-CHANNEL MOSFET<br>Top View SO-8<br>**----- End of picture text -----**<br>
## **Applications**
## **Features**
## **Benefits**
|High and low-side MOSFETs in a singlepackage||Increasedpower density|
|---|---|---|
|High-side P-Channel MOSFET||Easier drive circuitry|
|Industry-standardpinout|results in|Multi-vendor compatibility|
|Compatible with existingsurface mount techniques||Easier manufacturing|
|RoHS compliant containingno Lead,no Bromide and no Halogen||Environmentallyfriendlier|
|MSL1,Consumerqualification||Increased reliability|
|**Base Part Number**|**Package Type**|**Standard Pack**|**Standard Pack**|**Orderable part number**|
|---|---|---|---|---|
|||**Form**|**Quantity**||
|IRF9389PbF|SO-8|Tube/Bulk|95|IRF9389PbF|
|||Tape and Reel|4000|IRF9389TRPbF|
**Absolute Maximum Ratings**
||**Parameter**|**Max.**|**Max.**|**Units**|
|---|---|---|---|---|
|||**N-Channel**|**P-Channel**<br>~~a~~|~~a~~|
|VGS|Gate-to-Source Voltage<br>~~a~~|±20<br>~~a~~|±20<br>~~a~~|V<br>~~a~~|
|ID@ TA= 25°C|Continuous Drain Current,VGS@ 10V<br>~~a~~<br>~~ee~~|6.8<br>~~a~~<br>~~ee~~|-4.6<br>~~a~~<br>~~ee~~|A<br>~~a~~|
|ID @TA= 70°C<br>~~a~~|ContinuousDrainCurrent,VGS @10V<br>~~ee~~<br>~~a~~|5.4<br>~~ee~~|-3.7<br>~~ee~~||
|IDM<br>~~a~~|PulsedDrainCurrent<br>~~a~~|34|-23||
|PD @TA= 25°C<br>~~a~~|Power Dissipation<br>~~a~~<br>~~es~~|2.0<br>~~es~~||W|
|PD@TA= 70°C|Power Dissipation<br>~~ee~~|1.3<br>~~ee~~|||
||Linear Derating Factor<br>~~ee~~<br>~~ee ee~~|0.016<br>~~ee~~<br>~~ee~~||W/°C<br>~~ee~~|
|TJ<br>TSTG|Linear Derating Factor<br>Operating Junction and<br>Storage Temperature Range<br>~~ee ee~~|-55 to + 150<br>~~ee~~||°C<br>~~ee~~|
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**Static @ TJ = 25°C (unless otherwise specified)**
||**Parameter**||**Min.**|**Typ.**|**Max.**|**Units**|**Conditions**|
|---|---|---|---|---|---|---|---|
|BVDSS|Drain-to-Source Breakdown Voltage|N-Ch|30|–––|–––|V|VGS =0V, ID =250μA|
|||P-Ch|-30|–––|–––||VGS =0V, ID = -250μA|
|VDSS/TJ|Breakdown Voltage Temp. Coefficient|N-Ch|–––|0.03|–––|V/°C|Reference to 25°C, ID =1mA|
|||P-Ch|–––|0.02|–––||Reference to 25°C, ID = -1mA|
|RDS(on)|Static Drain-to-Source On-Resistance|N-Ch|–––|22|27|m|VGS =10V, ID =6.8A�|
||||–––|33|40||VGS =4.5V, ID =5.4A�|
|||P-Ch|–––|51|64|m|VGS = -10V, ID = -4.6A�|
||||–––|82|103||VGS = -4.5V, ID = -3.7A�|
|VGS(th)|Gate Threshold Voltage|N-Ch|1.3|1.8|2.3|V|VDS= VGS,ID= 10μA|
|||P-Ch|-1.3|-1.8|-2.3||VDS= VGS,ID= -10μA|
|IDSS|Drain-to-Source Leakage Current|N-Ch|–––|–––|1.0|μA|VDS =24V, VGS =0V|
|||P-Ch|–––|–––|-1.0||VDS = -24V, VGS =0V|
|||N-Ch|–––|–––|150||VDS =24V, VGS =0V, TJ =125°C|
|||P-Ch|–––|–––|-150||VDS = -24V, VGS =0V, TJ =125°C|
|IGSS|Gate-to-Source Forward Leakage|N-Ch|–––|–––|100|nA|VGS =20V|
|||P-Ch|–––|–––|-100||VGS = -20V|
||Gate-to-Source Reverse Leakage|N-Ch|–––|–––|-100||VGS = -20V|
|||P-Ch|–––|–––|100||VGS =20V|
|gfs|Forward Transconductance|N-Ch|8.2|–––|–––|S|VDS =15V, ID =5.4A|
|||P-Ch|4.1|–––|–––||VDS = -15V, ID = -3.7A|
|Qg|Total Gate Charge|N-Ch|–––|6.8|14|nC|VGS= -10V, VDS= -15V, ID= -4.6A<br>N-Channel<br>P-Channel<br>VGS= 10V, VDS= 15V, ID= 6.8A|
|||P-Ch|–––|8.1|16|||
|Qgs|Gate-to-Source Charge|N-Ch|–––|1.4|–––|||
|||P-Ch|–––|1.3|–––|||
|Qgd|Gate-to-Drain ("Miller") Charge|N-Ch|–––|0.98|–––|||
|||P-Ch|–––|2.1|–––|||
|RG|Gate Resistance|N-Ch|–––|2.2|4.4|||
|||P-Ch|–––|9.4|19|||
|td(on)|Turn-On Delay Time|N-Ch|–––|5.1|–––|ns|N-Channel<br>ID= 1.0A, RG= 6.2<br>VDD= 15V, VGS= 4.5V�<br>VDD= -15V, VGS= -4.5V�<br>ID= -1.0A, RG= 6.8<br>P-Channel|
|||P-Ch|–––|8.0|–––|||
|tr|Rise Time|N-Ch|–––|4.8|–––|||
|||P-Ch|–––|14|–––|||
|td(off)|Turn-Off Delay Time|N-Ch|–––|4.9|–––|||
|||P-Ch|–––|17|–––|||
|tf|Fall Time|N-Ch|–––|3.9|–––|||
|||P-Ch|–––|15|–––|||
|Ciss|Input Capacitance|N-Ch|–––|398|–––|pF|P-Channel<br>N-Channel<br>VGS= 0V, VDS= 15V, ƒ = 1.0MHz<br>VGS= 0V, VDS= -15V, ƒ = 1.0KHz|
|||P-Ch|–––|383|–––|||
|Coss|Output Capacitance|N-Ch|–––|82|–––|||
|||P-Ch|–––|104|–––|||
|Crss|Reverse Transfer Capacitance|N-Ch|–––|36|–––|||
|||P-Ch|–––|64|–––|||
## **Diode Characteristics**
||**Parameter**||**Min.**|**Typ.**|**Max.**|**Units**|**Conditions**|
|---|---|---|---|---|---|---|---|
|IS|Continuous Source Current (Body Diod|eN-Ch|–––|–––|2.0|A||
|||P-Ch|–––|–––|-2.0|||
|ISM|Pulsed Source Current (Body Diode)|N-Ch|–––|–––|34|||
|||P-Ch|–––|–––|-23|||
|VSD|Diode Forward Voltage|N-Ch|–––|–––|1.2|V|TJ= 25°C,IS= 2.0A,VGS= 0V�|
|||P-Ch|–––|–––|-1.2||TJ= 25°C,IS= -2.0A,VGS= 0V�|
|trr|Reverse Recovery Time|N-Ch|–––|8.4|13|ns|N-Channel: TJ= 25°C, IF= 2.0A,<br>VDD= -15V,di/dt = 102/μs�<br>VDD= 15V, di/dt = 102/μs�<br>P-Channel: TJ= 25°C, IF= -2.0A,|
|||P-Ch|–––|11|17|||
|Qrr|Reverse Recovery Charge|N-Ch|–––|2.3|3.5|nC||
|||P-Ch|–––|4.8|7.2|||
## **Notes:**
- Repetitive rating; pulse width limited by
- max. junction temperature. (See fig. 16)
- Surface mounted on 1 in square Cu board
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- Pulse width 400μs; duty cycle 2%.
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## N-Channel
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100<br>VGS<br>eeea eeeteeeereeeeer ee TOP 7.5V<br>i 6.5V<br>SE “AR 5.5V4.5V<br>4.0V<br>ERY Zcmnnn 3.5V<br>3.0V<br>BOTTOM 2.75V<br>ae<br>10<br>oe /7/ eee<br>DD /7 Qe eeeee<br>PWY//derfii26 eeAA<br>Ye 2.75V<br>60μs PULSE WIDTH<br>Tj = 25°C<br>1<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 1. Typical Output Characteristics<br>100<br>rs es es —— a<br>10 P| TJ = 150°C LAR<br>es ey 2 Ae ee<br>1 Pfftes TJ ee = 25°C ee<br>ee i a<br>V DS = 15V<br>60μs PULSE WIDTH<br>2 a<br>0.1<br>1 2 3 4 5 6<br>VGS, Gate-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>
**Fig 3.** Typical Transfer Characteristics
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100<br>VGS<br>eeea eeeeeetereeeeer TOP 7.5V<br>oe oo 6.5V<br>eal 5.5V4.5V<br>4.0V<br>ee 3.5V<br>3.0V<br>BOTTOM 2.75V<br>ff<br>10<br>GP<br>ED /// 2 eePea<br>m/e, eer<br>2.75V<br>Yon aa<br>MY fi a ell<br>60μs PULSE WIDTH<br>Tj = 150°C<br>1<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 2. Typical Output Characteristics<br>2.0<br>ID = 5.4A<br>V GS = 4.5V<br>1.5 LLL EL<br>SaanPdneee<br>1.0 ea<br>|<br>PEELE<br>0.5 ELL ELL<br>-60 -40 -20 0 20 40 60 80 100 120 140 160<br>TJ , Junction Temperature (°C)<br>ID, Drain-to-Source Current (A)<br>RDS(on) , Drain-to-Source On Resistance (Normalized)<br>**----- End of picture text -----**<br>
**Fig 4.** Normalized On-Resistance vs. Temperature
## N-Channel
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10000<br>VGS = 0V, f = 1 MHZGS = 0V, f = 1 MHZ = 0V, f = 1 MHZ<br>Ciss = Ciss = C = C gs + Cgd, C+ Cgd, Cgd, C, C ds SHORTEDSHORTED<br>C = C<br>iz Crss oss rss oss oss = Cds gd + Cgdds gd + Cgdgd + Cgd+ Cgdgd<br>en<br>1000<br>Ciss<br>iss<br>C<br>oss<br>100 Sealine<br>tel |<br>Crssrss<br>EC<br>10<br>1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>C, Capacitance (pF)<br>**----- End of picture text -----**<br>
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10000 14.0<br>VGS = 0V, f = 1 MHZGS = 0V, f = 1 MHZ = 0V, f = 1 MHZ<br>Ciss = Ciss = C = C gs + Cgd, C+ Cgd, Cgd, C, C ds SHORTEDSHORTED ID= 6.8A<br>C = C 12.0 V DS = 24V<br>iz Crss oss rss oss oss = Cds gd + Cgdds gd + Cgdgd + Cgd+ Cgdgd VDS= 15V<br>en 10.0 V DS = 6.0V |<br>1000<br>Ciss 8.0<br>C 6.0<br>oss<br>100 Sealine PY<br>tel | HF |i<br>4.0<br>Crssrss<br>EC 2.0 YL EEL<br>10 0.0<br>1 10 100 0 1 2 3 4 5 6 7 8 9<br>VDS, Drain-to-Source Voltage (V) QG, Total Gate Charge (nC)<br>Fig 5. Typical Capacitance vs. Fig 6. Typical Gate Charge vs.<br>Drain-to-Source Voltage Gate-to-Source Voltage<br>100 100<br>OPERATION IN THIS AREA<br>LIMITED BY RDS(on)<br>1 00μsec<br>10 1msec<br>TJ = 150°C<br>10<br>1 10msec<br>a a HNMl<br>TJ = 25°C<br>1 DC<br>0.1<br>es ey Aa A Tc = 25°C Soee<br>V GS = 0V Tj = 150°CSingle Pulse<br>0.1 ppp 0.01 = aee:eee<br>0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.1 1 10 100<br>VSD, Source-to-Drain Voltage (V) VDS, Drain-to-Source Voltage (V)<br>C, Capacitance (pF)<br>VGS, Gate-to-Source Voltage (V)<br>ISD, Reverse Drain Current (A) ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>
**Fig 7.** Typical Source-Drain Diode Forward Voltage
**Fig 8.** Maximum Safe Operating Area
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7<br>6<br>5 S eT<br>4<br>TINT<br>3<br>TIN<br>2 TN<br>TTT<br>1 TET<br>0<br>25 50 75 100 125 150<br> TA , Ambient Temperature (°C)<br>ID, Drain Current (A)<br>**----- End of picture text -----**<br>
**Fig 9.** Maximum Drain Current vs. Ambient Temperature
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Vos<br>“ ae| +<br>-<br>SN<br><br>a <br>**----- End of picture text -----**<br>
**Fig 10a.** Switching Time Test Circuit
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VDS<br>90%<br>10%<br>VGS AX. | |<br>td(on) tr td(off) tf<br>**----- End of picture text -----**<br>
**Fig 10b.** Switching Time Waveforms
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100<br>ID = 6.8A<br>80<br>60<br>40<br>20<br>2 4 6 8 10 12 14 16 18 20<br>VGS, Gate -to -Source Voltage (V)<br>)<br>RDS(on), Drain-to -Source On Resistance (m<br>**----- End of picture text -----**<br>
**Fig 11.** Typical On-Resistance vs. Gate Voltage
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120<br>110 pt tt tt tt<br>ptt<br>100<br>90 pt tT tt tt<br>80 Pt tT tT tt yt tT<br>70 pt tT tT tt tT<br>60 pt |tT tttT tyty tT<br>Vgs = 4.5V<br>pt<br>50<br>Vgs = 10V<br>40 | | | peete<br>30 eT<br>+ fy Ee<br>20 rr ttttt<br>0 5 10 15 20 25 30 35 40 45<br>ID, Drain Current (A)<br>)<br>RDS(on), Drain-to -Source On Resistance (m<br>**----- End of picture text -----**<br>
**Fig 12.** Typical On-Resistance vs. Drain Current
## N-Channel
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2.0<br>1.8<br>PNGHNTTT<br>1.6<br>TTT<br>1.4<br>ID = 10μA<br>PP NT<br>1.2<br>1.0<br>tit tt NEtN<br>0.8<br>PCE<br>0.6<br>-75 -50 -25 0 25 50 75 100 125 150<br>TJ , Temperature ( °C )<br>VGS(th), Gate threshold Voltage (V)<br>**----- End of picture text -----**<br>
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20000<br>TA<br>16000<br>a<br>12000 A AANA<br>{<br>80004000 A AN A<br>Wigan<br>0<br>1E-8 1E-7 1E-6 1E-5 1E-4 1E-3 1E-2<br>Time (sec)<br>Power (W)<br>**----- End of picture text -----**<br>
**Fig 13.** Threshold Voltage vs. Temperature
Typical Power vs. Time
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QG<br>oo<br>QGS QGD<br>| ;<br>VG<br>FS<br>Charge -<br>**----- End of picture text -----**<br>
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Current Regulator<br>Same Type as D.U.T.<br>50K<br>12V .2F<br>.3F<br>re<br>+<br>D.U.T. -VDS<br>I - LLit 4<br>VGS<br>(st<br>3mA<br>ot<br>IG ID<br>Current Sampling Resistors<br>**----- End of picture text -----**<br>
**Fig 15a.** Basic Gate Charge Waveform
**Fig 15b.** Gate Charge Test Circuit
## N and P-Channel
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100<br>D = 0.50<br>cme<br>0.20<br>10 a ee ert I PETe<br>0.10<br>| | 0.05 Hi} | tera te<br>1 0.02<br>SS 0.01 Sa<br>i a ea ee eel<br>0.1 eea ee ell<br>ir<br>SINGLE PULSE<br>0.01 me ee ee Notes: ee el<br>( THERMAL RESPONSE ) 1. Duty Factor D = t1/t2<br>a ini 2. Peak Tj = P dm x Zthja + T A<br>aill iemc oa ce<br>0.001<br>1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100<br>t1 , Rectangular Pulse Duration (sec)<br>Thermal Response ( Z thJA ) °C/W<br>**----- End of picture text -----**<br>
**Fig 16.** Typical Effective Transient Thermal Impedance, Junction-to-Ambient
## P-Channel
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100<br>VGS<br>TOP -8.0V<br>-7.0V<br>-6.0V 7 ae |<br>-5.0V<br>-4.5V Zo<br>-3.5V<br>10 -3.0V<br>BOTTOM -2.75V<br>| aSe oo<br>O70 eo<br>1<br>-2.75V<br>60μs PULSE WIDTH<br>Tj = 25°C<br>0.1 ie(Fo caelmilli<br>0.1 1 10 100<br>-VDS, Drain-to-Source Voltage (V)<br>-ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>
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100<br>VGS<br>TOP -8.0V<br>-7.0V<br>-6.0V Ao<br>-5.0V<br>-4.5V 7 eae<br>-3.5V<br>10 -3.0V<br>BOTTOM -2.75V<br>| fh7 Sasa eee<br>hoo—<br>1<br>-2.75V<br>60μs PULSE WIDTH<br>Tj = 150°C<br>0.1 pfBim allee l<br>0.1 1 10 100<br>-VDS, Drain-to-Source Voltage (V)<br>-ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>
**Fig 17.** Typical Output Characteristics
**Fig 18.** Typical Output Characteristics
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100 a ee ee ns Ens Dns<br>10<br>P| er<br>T = 150°C<br>J<br>ey ae<br>1 T J = 25°C<br>=<br>VDS = -15V<br>| 60μs PULSE WIDTH<br>0.1 et<br>1 2 3 4 5 6 7<br>-VGS, Gate-to-Source Voltage (V)<br>-ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>
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1.6<br>ID = -3.7A<br>VGS = -4.5V<br>1.41.2 |}| 4]<br>4<br>1.0<br>|<br>0.8<br>0.6 ALLELE<br>-60 -40 -20 0 20 40 60 80 100 120 140 160<br>TJ , Junction Temperature (°C)<br>RDS(on) , Drain-to-Source On Resistance (Normalized)<br>**----- End of picture text -----**<br>
**Fig 19.** Typical Transfer Characteristics
**Fig 20.** Normalized On-Resistance vs. Temperature
P-Channel
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10000 14.0<br>VCGS iss = C = 0V, f = 1 MHZgs + Cgd, C ds SHORTED ID= -4.6A<br>= C rss = C gd 12.0 fs |<br>V = -24V<br>Se Coss = Cds + Cgd DS LL<br>oe ee 10.0 VDS= -15V ee<br>1000 VDS= -6.0V<br>oot | =f<br>C 8.0<br>iss<br>C<br>oss 6.0<br>C<br>rss<br>100 Ssecsliimna)iii anTAne<br>peHHTI 4.0 i /1/WY | |<br>2.0<br>TEEr ttAe tt<br>10 0.0<br>1 10 100 0 2 4 6 8 10 12<br>-VDS, Drain-to-Source Voltage (V) QG Total Gate Charge (nC)<br>Fig 21. Typical Capacitance vs. Fig 22. Typical Gate Charge vs.<br>Drain-to-Source Voltage Gate-to-Source Voltage<br>100.00 100<br>OPERATION IN THIS AREA<br>LIMITED BY RDS(on)<br>100μsec<br>10 1msec<br>10.00<br>= TJ = 150°C a ee ell 10msec e<br>1<br>1.00 TJ = 25°C DC<br>0.1<br>Tc = 25°C<br>A a V GS = 0V TSingle Pulsej = 150°C a<br>0.10 PETE 0.01 sii sii<br>0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.1 1 10 100<br>-VSD, Source-to-Drain Voltage (V) -VDS, Drain-to-Source Voltage (V)<br>C, Capacitance (pF)<br>-ISD, Reverse Drain Current (A) -ID, Drain-to-Source Current (A)<br>-VGS, Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>
**Fig 23.** Typical Source-Drain Diode Forward Voltage
**Fig 24.** Maximum Safe Operating Area
P-Channel
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5.0<br>4.0<br>STI “ e a -<br>+<br>ChE] |<br>3.0<br><br><br>SERRE, | ee<br>2.0 GL<br>1.0 Fig 26a. Switching Time Test Circuit<br>0.0 EEE td(on) tr td(off) tf<br>25 50 75 100 125 150 VGS<br>oe<br>10%<br> TA , Ambient Temperature (°C) 90% VK<br>Fig 25. Maximum Drain Current vs. VDS<br>Ambient Temperature<br>Fig 26b. Switching Time Waveforms<br>200 600<br>ID = -4.6A<br>500<br>160 Li ptt Vgs = -4.5V ptt<br>400<br>120 TTP) © 300 PtSeetft<br>200<br>ALLELE ts<br>80 Vgs = -10V<br>100<br>WOOT pt iit ft<br>40 PN 0 SSSttt<br>2 4 6 8 10 12 14 16 18 20 0 5 10 15 20 25 30<br>-ID, Drain Current (A)<br>-VGS, Gate -to -Source Voltage (V)<br>) <br>RDS(on), Drain-to -Source On Resistance (m<br>-ID, Drain Current (A)<br>)<br>RDS(on), Drain-to -Source On Resistance (m<br>**----- End of picture text -----**<br>
**Fig 27.** Typical On-Resistance vs. Gate Voltage
**Fig 28.** Typical On-Resistance vs. Drain Current
## P-Channel
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2.2<br>2.0<br>{ett ttt<br>1.8<br>AN<br>1.6<br>EEE ID = -10μA<br>1.4<br>EN<br>1.2<br>BEEERERNE<br>1.0<br>SRR REAN<br>TTP<br>0.8<br>-75 -50 -25 0 25 50 75 100 125 150<br>TJ , Temperature ( °C )<br>-VGS(th), Gate threshold Voltage (V)<br>**----- End of picture text -----**<br>
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20000<br>16000<br>Tya<br>AAT<br>12000<br>i<br>8000<br>a aa<br>Oi A On a<br>4000<br>a a<br>0 Mint<br>1E-8 1E-7 1E-6 1E-5 1E-4 1E-3 1E-2<br>Time (sec)<br>Power (W)<br>**----- End of picture text -----**<br>
**Fig 29.** Threshold Voltage vs. Temperature
**Fig 30** Typical Power vs. Time
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QG<br>QGS QGD<br>VG<br>—<br>Charge<br>**----- End of picture text -----**<br>
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Current Regulator<br>Same Type as D.U.T.<br>50K<br>12V .2F<br>ma .3F<br>D.U.T. +-VDS<br>VGS<br>-3mA<br>5 & |<br>IG ID<br>Current Sampling Resistors<br>**----- End of picture text -----**<br>
**Fig 31a.** Basic Gate Charge Waveform
**Fig 31b.** Gate Charge Test Circuit
## **SO-8 Package Details**
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Pb [ois [oa [oss fost_|<br>[0075<br>**----- End of picture text -----**<br>
## **SO-8 Part Marking**
## **Tape and Reel**
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TERMINAL NUMBER 1<br>**----- End of picture text -----**<br>
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12.3 ( .484 )<br>11.7 ( .461 )<br>8.1 ( .318 )<br>7.9 ( .312 ) FEED DIRECTION<br>| 330.00<br>(12.992)<br> MAX.<br>14.40 ( .566 )<br>[Xx 12.40 ( .488 )<br>**----- End of picture text -----**<br>
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
|**Qualification information**†|||
|---|---|---|
|Qualification level|Cons umer<br>(per JE DE C JE S D47F †† guidelines )||
|Moisture Sensitivity Level|(per JE DE C JE S D47F<br>SO-8|MS L1<br>(per JE DE C J-S TD-020D††)<br>(per JE DE C JE S D47Fguidelines )|
|RoHS compliant|Yes||
**IR WORLD HEADQUARTERS:** 101 N. Sepulveda Blvd., El Segundo, California 90245 To contact International Rectifier, please visit http://www.irf.com/whoto-call/
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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