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IRF9358TRPBF
Dual MOSFET, P Channel, 30 V, 30 V, 9.2 A, 9.2 A, 0.013 ohm
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Dual MOSFETs
- SVHC: No SVHC (21-Jan-2025)
- No. of Pins: 8Pins
- Channel Type: P Channel
- Product Range: HEXFET Series
- Qualification: -
- Transistor Case Style: SOIC
- Operating Temperature Max: 150°C
- Power Dissipation N Channel: 2W
- Power Dissipation P Channel: 2W
- Drain Source Voltage Vds N Channel: 30V
- Drain Source Voltage Vds P Channel: 30V
- Continuous Drain Current Id N Channel: 9.2A
- Continuous Drain Current Id P Channel: 9.2A
- Drain Source On State Resistance N Channel: 0.013ohm
- Drain Source On State Resistance P Channel: 0.013ohm
| Delivery and price | |
|---|---|
| Units per pack | 12000 |
| Price | 0.331 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## IRF9358PbF ## HEXFET ® Power MOSFET **==> picture [425 x 127] intentionally omitted <==** **----- Start of picture text -----**<br> VDS -30 V<br>S2 1 8 D2<br>R D<br>DS(on) max 16.3 m Ω<br>(@VGS = -10V) G2 2 7 D2<br>RDS(on) max 23.8 m Ω S1 3 D 6 D1<br>(@VGS = -4.5V)<br>G1 4 5 D1<br>Qg (typical) 19 nC SO-8<br>ID -9.2 A<br>(@TA = 25°C)<br>**----- End of picture text -----**<br> ## **Applications** - ## **Features and Benefits** ## **Features** ## **Resulting Benefits** Industry-Standard SO-8 Package results in Multi-Vendor Compatibility RoHS Compliant Containing no Lead, no Bromide and no Halogen ⇒ Environmentally Friendlier **==> picture [502 x 263] intentionally omitted <==** **----- Start of picture text -----**<br> |||||| |---|---|---|---|---| |Orderable part number|Package Type|Standard Pack|Note| |Form|Quantity| |IRF9358PbF|SO8|Tube/Bulk|95| |IRF9358TRPbF|SO8|Tape and Reel|4000| |Absolute Maximum Ratings| |Parameter|Max.|Units| |VDS|Drain-to-Source Voltage|-30| |V| |VGS|——————|Gate-to-Source Voltage|SS|± 20| |PO| |ID @ TA = 25°C|Continuous Drain Current, VGS @ 10V|-9.2| |PO| |ID @ TA = 70°C|Continuous Drain Current, VGS @ 10V|-7.3|A| |PO| |IDM|Pulsed Drain Current|-73| |——| |PD @TA = 25°C|a|Power Dissipation|2.0|W| |PD @TA = 70°C|a|Power Dissipation|1.3| |Linear Derating Factor|0.016|W/°C| |TJ|Operating Junction and|-55 to + 150|°C| |TSTG|Storage Temperature Range| |ee ee|ee| **----- End of picture text -----**<br> > Notes ® through are on page 2 © www.irf.com 1 1/2/11 ## ���������� **Static @ TJ = 25°C (unless otherwise specified)** ||**Parameter**|**Min.**|**Typ.**|**Max. **|**Units**|**Conditions**|**Conditions**| |---|---|---|---|---|---|---|---| |BVDSS|Drain-to-Source Breakdown Voltage|-30|–––|–––|V|VGS= 0V, ID= -250μA|| |ΔΒVDSS/ΔTJ|Breakdown Voltage Temp. Coefficient|–––|0.02|–––|V/°C|Reference to 25°C, ID= -1mA|| |RDS(on)|Static Drain-to-Source On-Resistance|–––|13.0|16.3|mΩ|VGS= -10V, ID= -9.2A�|| |||–––|19.0|23.8||VGS= -4.5V, ID= -7.3A�|| |VGS(th)|Gate Threshold Voltage|-1.3|-1.8|-2.4|V|VDS= VGS, ID= -25μA|| |ΔVGS(th)|Gate Threshold Voltage Coefficient|–––|-5.9|–––|mV/°C||| |IDSS|Drain-to-Source Leakage Current|–––|–––|-1.0|μA|VDS= -24V, VGS= 0V|| |||–––|–––|-150||VDS= -24V, VGS= 0V, TJ= 125°C|| |IGSS|Gate-to-Source Forward Leakage|–––|–––|-100|nA|VGS= -20V|| ||Gate-to-Source Reverse Leakage|–––|–––|100||VGS= 20V|| |gfs|Forward Transconductance|23|–––|–––|S|VDS= -10V, ID= -7.3A|| |Qg|Total Gate Charge�|–––|19|–––|nC|VDS= -15V,VGS= -4.5V,ID= - 7.3A|| |Qg|Total Gate Charge�|–––|38|–––|nC|ID= -7.3A<br>VDS= -15V<br>VGS= -10V|| |Qgs|Gate-to-Source Charge�|–––|5.8|–––|||| |Qgd|Gate-to-Drain Charge�|–––|8.9|–––|||| |RG|Gate Resistance�|–––|15|–––|Ω||| |td(on)|Turn-On DelayTime|–––|5.7|–––|ns|See Figs. 19a &19b<br>RG= 6.8Ω<br>VDD= -15V, VGS= -4.5V�<br>ID= -1.0A|| |tr|Rise Time|–––|7.2|–––|||| |td(off)|Turn-Off DelayTime|–––|146|–––|||| |tf|Fall Time|–––|69|–––|||| |Ciss|Input Capacitance|–––|1740|–––|pF|ƒ= 1.0MHz<br>VGS= 0V<br>VDS= -25V|| |Coss|Output Capacitance|–––|360|–––|||| |Crss|Reverse Transfer Capacitance|–––|240|–––|||| |**Avalanche Characteristics**|||||||| ||**Parameter**||**Typ.**|||**Max.**|**Units**| |EAS|Single Pulse Avalanche Energy �||–––|||210|mJ| |IAR|Avalanche Current�||–––|||-7.3|A| |**Diode Characteristics**|||||||| ||**Parameter**|**Min.**|**Typ.**|**Max. **|**Units**|**Conditions**|| |IS|Continuous Source Current<br>(BodyDiode)|–––|–––|-2.0|A|G<br>D<br>S<br>showing the<br>integral reverse<br>p-njunction diode.<br>MOSFET symbol|| |ISM|Pulsed Source Current<br>(BodyDiode)��|–––|–––|-73|||| |VSD|Diode Forward Voltage|–––|–––|-1.2|V|TJ= 25°C, IS= -2.0A, VGS= 0V�|| |trr|Reverse RecoveryTime|–––|55|83|ns|TJ= 25°C, IF= -2.0A, VDD= -24V<br>di/dt = 100A/μs�|| |Qrr|Reverse RecoveryCharge|–––|35|53|nC||| |**Thermal Resistance**|||||||| ||**Parameter**||**Typ.**|||**Max.**|**Units**| |RθJL|Junction-to-Drain Lead�||–––|||20|°C/W| |RθJA|Junction-to-Ambient�||–––|||62.5|| ## **������** - Repetitive rating; pulse width limited by max. junction temperature. - Starting TJ = 25°C, L = 4.6mH, RG = 25 Ω , IAS = -6.4A. - Pulse width ≤ 400μs; duty cycle ≤ 2%. - When mounted on 1 inch square copper board. - R θ is measured at TJ of approximately 90°C. - For DESIGN AID ONLY, not subject to production testing. www.irf.com 2 ���������� **==> picture [212 x 428] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>VGS<br>TOP -10V<br>-4.5V<br>-3.7V<br>10 -3.5V<br>-3.3V<br>-3.0V<br>-2.7V<br>BOTTOM -2.5V<br>1<br>0.1<br>-2.5V<br>≤ 60μs PULSE WIDTH<br>Tj = 25°C<br>0.01<br>0.1 1 10 100<br>-VDS, Drain-to-Source Voltage (V)<br>Fig 1. Typical Output Characteristics<br>100<br>TJ = 150°C<br>10<br>T = 25°C<br>J<br>1<br>VDS = -15V<br>≤ 60μs PULSE WIDTH<br>0.1<br>2 3 4 5<br>-VGS, Gate-to-Source Voltage (V)<br>-ID, Drain-to-Source Current (A)<br>-ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br> **Fig 3.** Typical Transfer Characteristics **==> picture [216 x 203] intentionally omitted <==** **----- Start of picture text -----**<br> 10000<br>VGS = 0V, f = 1 MHZ<br>Ciss = Cgs + Cgd, Cds SHORTED<br>C = C<br>rss gd<br>Coss = Cds + Cgd<br>C<br>iss<br>1000 C oss<br>Crss<br>100<br>1 10 100<br>-VDS, Drain-to-Source Voltage (V)<br>C, Capacitance(pF)<br>**----- End of picture text -----**<br> **Fig 5.** Typical Capacitance vs.Drain-to-Source Voltage **==> picture [217 x 425] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>VGS<br>TOP -10V<br>-4.5V<br>-3.7V<br>-3.5V<br>-3.3V<br>-3.0V<br>10 -2.7V<br>BOTTOM -2.5V<br>1 -2.5V<br>≤ 60μs PULSE WIDTH<br>Tj = 150°C<br>0.1<br>0.1 1 10 100<br>-VDS, Drain-to-Source Voltage (V)<br>Fig 2. Typical Output Characteristics<br>1.6<br>ID = -9.2A<br>VGS = -10V<br>1.4<br>1.2<br>1.0<br>0.8<br>0.6<br>-60 -40 -20 0 20 40 60 80 100 120 140 160<br>TJ , Junction Temperature (°C)<br>RDS(on) , Drain-to-Source On Resistance (Normalized)<br>-ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br> **Fig 4.** Normalized On-Resistance vs. Temperature **==> picture [199 x 191] intentionally omitted <==** **----- Start of picture text -----**<br> 14<br>ID= -7.3A<br>12 VDS= -24V<br>VDS= -15V<br>10 VDS= -6.0V<br>8<br>6<br>4<br>2<br>0<br>0 10 20 30 40 50<br> QG Total Gate Charge (nC)<br>-VGS, Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br> **Fig 6.** Typical Gate Charge vs.Gate-to-Source Voltage www.irf.com 3 ## ���������� **==> picture [219 x 200] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>T = 150°C<br>J<br>10<br>TJ = 25°C<br>1<br>VGS = 0V<br>0.1<br>0.2 0.4 0.6 0.8 1.0 1.2<br>-VSD, Source-to-Drain Voltage (V)<br>-ISD, Reverse Drain Current (A)<br>**----- End of picture text -----**<br> **Fig 7.** Typical Source-Drain Diode Forward Voltage **==> picture [212 x 201] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>8<br>6<br>4<br>2<br>0<br>25 50 75 100 125 150<br> TA , Ambient Temperature (°C)<br>-ID, Drain Current (A)<br>**----- End of picture text -----**<br> **Fig 9.** Maximum Drain Current vs. Ambient Temperature **==> picture [205 x 200] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)<br>100<br>10<br>10msec<br>DC 1msec<br>1<br>TA = 25°C<br>Tj = 150°C<br>Single Pulse<br>0.1<br>0.1 1 10 100<br>-VDS, Drain-to-Source Voltage (V)<br>-ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br> **Fig 8.** Maximum Safe Operating Area **==> picture [210 x 218] intentionally omitted <==** **----- Start of picture text -----**<br> 2.5<br>2.0<br>ID = -25μA<br>1.5<br>1.0<br>0.5<br>-75 -50 -25 0 25 50 75 100 125 150<br>TJ , Temperature ( °C )<br>Fig 10. Threshold Voltage vs. Temperature<br>-VGS(th), Gate threshold Voltage (V)<br>**----- End of picture text -----**<br> **==> picture [447 x 206] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>D = 0.50<br>10 0.20<br>0.10<br>0.05<br>1 0.02<br>0.01<br>0.1<br>0.01 SINGLE PULSE Notes:<br>( THERMAL RESPONSE ) 1. Duty Factor D = t1/t2<br>2. Peak Tj = P dm x Zthja + T A<br>0.001<br>1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100<br>t1 , Rectangular Pulse Duration (sec)<br>Thermal Response ( Z thJA ) °C/W<br>**----- End of picture text -----**<br> **Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 4 **==> picture [206 x 218] intentionally omitted <==** **----- Start of picture text -----**<br> 50<br>ID = -9.2A<br>40<br>30<br>PIN | ft yyy<br>T = 125°C<br>20 NSEre— J<br>10<br>TJ = 25°C<br>0 HEE EEE<br>2 4 6 8 10 12 14 16 18 20<br>-VGS, Gate -to -Source Voltage (V)<br>Fig 12. On-Resistance vs. Gate Voltage<br>) Ω<br>RDS(on), Drain-to -Source On Resistance (m<br>**----- End of picture text -----**<br> **==> picture [206 x 201] intentionally omitted <==** **----- Start of picture text -----**<br> 50<br>40<br>30 PELL<br>VGS = -4.5V y,<br>20<br>VGS = -10V<br>10 a a<br>0 10 20 30 40 50 60 70<br>-ID, Drain Current (A)<br>) Ω<br>RDS(on), Drain-to -Source On Resistance (m<br>**----- End of picture text -----**<br> **Fig 13.** Typical On-Resistance vs. Drain Current **==> picture [209 x 201] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>ID<br>TOP -0.9A<br>800 -1.5A<br>BOTTOM -7.3A<br>600<br>ONE<br>400<br>200 <I<br>Ss<br>SL<br>0<br>25 50 75 100 125 150<br>Starting TJ , Junction Temperature (°C)<br>EAS , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br> **Fig 14.** Maximum Avalanche Energy vs. Drain Current **==> picture [212 x 196] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>800<br>600<br>400 a\<br>200 NII<br>li<br>0 Cot<br>1E-5 1E-4 1E-3 1E-2 1E-1 1E+0<br>Time (sec)<br>Single Pulse Power (W)<br>**----- End of picture text -----**<br> **Fig 15** Typical Power vs. Time **==> picture [429 x 170] intentionally omitted <==** **----- Start of picture text -----**<br> Driver Gate Drive<br>P.W.<br>D.U.T * + a P.W. Period | D = —_— Period<br> • CircuitLow LayoutS ConsiderationsInd V | GS=10V<br>(a [©)] |<br> •<br>- • Low Leakage Inductance @ D.U.T. ISD Waveform<br>+<br>Reverse<br>Recovery Body Diode Forward<br>oi - [l] Current Transformer - ® + Current r Current di/dt NN<br>© D.U.T. VDS Waveform<br>00 Diode Recovery<br>dv/dt \ > VDD<br>• Re-Applied<br>• Driver same type as D.U.T. + Voltage Body Diode Forward Drop<br>Re ( a8 • di/dt controlled by Rg Vop - ee<br>• D.U.T. - Device Under Test es ee<br>Ripple ≤ 5% ISD<br>Isp controlled by Duty Factor "D" ® t ¥<br>**----- End of picture text -----**<br> > or P-Channel HEXFET ® ower MOSFETs **Fig 16.** www.irf.com 5 **==> picture [226 x 131] intentionally omitted <==** **----- Start of picture text -----**<br> L<br>VCC<br>DUT<br>0<br>201 K SS<br>n a l<br>**----- End of picture text -----**<br> **==> picture [176 x 144] intentionally omitted <==** **----- Start of picture text -----**<br> Id<br>Vds<br>Vgs<br>Vgs(th)<br>Qgodr Qgd Qgs2 Qgs1<br>**----- End of picture text -----**<br> **Fig 17a.** Gate Charge Test Circuit **Fig 17b.** Gate Charge Waveform **==> picture [434 x 140] intentionally omitted <==** **----- Start of picture text -----**<br> L<br>VDS IAS<br>RG D.U.T V<br>L. DD \ |]<br>IAS A<br>DRIVER<br>:x<br>tp 0.01 Ω<br>tp<br>V(BR)DSS<br>15V<br>**----- End of picture text -----**<br> **Fig 18a.** Unclamped Inductive Test Circuit **Fig 18b.** Unclamped Inductive Waveforms **==> picture [127 x 55] intentionally omitted <==** **----- Start of picture text -----**<br> -<br>+<br>≤ 1<br>≤ 0.1 %<br>**----- End of picture text -----**<br> **==> picture [165 x 102] intentionally omitted <==** **----- Start of picture text -----**<br> td(on) tr td(off) tf<br>VGS<br>ooo<br>10%<br>*n<br>\/<br>90% X<br>VDS<br>**----- End of picture text -----**<br> **Fig 19a.** Switching Time Test Circuit **Fig 19b.** Switching Time Waveforms www.irf.com 6 ���������� ## **��������������������** ���������������� Dimensions are shown in milimeters (inches) **==> picture [224 x 256] intentionally omitted <==** **----- Start of picture text -----**<br> D B<br>A 5<br>8 7 6 5<br>6<br>H<br>E<br>0.25 [.010] A<br>1 2 3 4<br>6X e<br>e1<br>A<br>C<br>0.10 [.004]<br>8X b A1<br>0.25 [.010] C A B<br>**----- End of picture text -----**<br> ## NOTES: 1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994. 2. CONTROLLING DIMENSION: MILLIMETER 3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES]. 4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA. - 5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS. MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006]. - 6 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS. MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010]. - 7 DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE. |||||||||||||||||INCHES|INCHES|INCHES|INCHES|INCHES|INCHES||||MILLIMETERS|MILLIMETERS|MILLIMETERS|MILLIMETERS|| |---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---| |||||||||||||DIM|||MIN||||||MAX||||MIN|||MAX|| |||||||||||||||A|.0532||||||.0688||||1.35|||1.75|| |||||||||||||||A1|.0040||||||.0098||||0.10|||0.25|| |||||||||||||||b|.013||||||.020||||0.33|||0.51|| |||||||||||||||D<br>E<br>e<br>c|.189<br>.1497<br>.050 BASIC<br>.1968<br>.1574<br>.0075<br>.0098||||||||||4.80<br>3.80<br>1.27 BASIC<br>5.00<br>4.00<br>0.19<br>0.25||||| ||||||||||||||e 1||.025|||BASIC|||||||0.635 BASIC||||| |||||||||||||||H|.2284||||||.2440||||5.80|||6.20|| |||||||||||||||K|.0099||||||.0196||||0.25|||0.50|| |||||||||||||||L|.016||||||.050||||0.40|||1.27|| |||||||||||||||y|0°||||||8°|||||0°||8°|| |||||||||||||K x 45°|||||||||||||||||| |y|||||||||||||||||||||||||||||| ||||||||||||||||||||||||||||||| ||||||||||8X|||L||||||8X|||c||||||||| |||||||||||7|||||||||||||||||||| ||||||||||||||||||||||||||||||| ||||||||||||||||||||||||||||||| ||||||||||||||||||FOOTPRINT||||||||||||| ||||||||||||||||||||||8X 0.72 [.028]||||||||| ||||||||||||||||||||||||||||||| ||||||||||||||||||||||||||||||| ||||||||||||||||||||||||||||||| ||||||||||||||||||||||||||||||| |||||||6.46 [.255]|||||||||||||||||||||||| ||||||||||||||||||||||||||||||| ||||||||||||||||||||||||||||||| ||||||||||||||||||||||||||||||| |||3X|1.27 [.050]|||||||||||||||||||||||8X 1.78 [.070]|||| ## SO-8 Part Marking Information EXAMPLE: THIS IS AN IRF7101 (MOSFET) ## DATE CODE (YWW) P = DISGNATES LEAD - FREE PRODUCT (OPTIONAL) Y = LAST DIGIT OF THE YEAR WW = WEEK XXXX A = ASSEMBLY SITE CODE INTERNATIONAL F7101 RECTIFIER LOT CODE LOGO PART NUMBER Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ www.irf.com 7 SO-8 Tape and Reel (Dimensions are shown in milimeters (inches)) **==> picture [188 x 296] intentionally omitted <==** **----- Start of picture text -----**<br> TERMINAL NUMBER 1<br>oO Oo ©<br>12.3 ( .484 )<br>11.7 ( .461 )<br>8.1 ( .318 )<br>7.9 ( .312 ) | FEED DIRECTION<br>| 330.00<br>(12.992)<br> MAX.<br>14.40 ( .566 )<br>12.40 ( .488 )<br>**----- End of picture text -----**<br> NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. ## **Qualification Information[†]** |**Qualification Information[†]**||| |---|---|---| |Qualification level|Consumer††|| ||(per JEDEC JESD47F†††guidelines)|| |Moisture Sensitivity Level|SO-8|MSL1<br>(per JEDEC J-STD-020D†††)| |RoHS Compliant|Yes|| - ; http://www.irf.com/product-info/reliability - i ~~t~~ o Qualification standards can be found at International Rectifier’s web site - Higher qualification ratings may be available should the user have such requirements. - Please contact your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ - t Applicable version of JEDEC standard at the time of product release. ~~t~~ t Data and specifications subject to change without notice. **IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 01/2011 www.irf.com 8 ## **IMPORTANT NOTICE** The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( **www.infineon.com** ). ## **WARNINGS** Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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