IRF8915TRPBF

## PD-95727A IRF8915PbF HEXFET Power MOSFET 

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V R  max I<br>DSS DS(on) D<br>20V 18.3m @VGS = 10V 8.9A<br>Bg<br>S1 1 8 D1<br>G1 2 7 D1<br>S2 3 6 D2<br>G2 4 5 D2<br>SO-8<br>Top View<br>**----- End of picture text -----**<br>


## **Applications** 

Dual SO-8 MOSFET for POL converters in desktop, servers, graphics cards, game consoles and set-top box 

Lead-Free 

## **Benefits** 

Ultra-Low Gate Impedance Very Low RDS(on) Fully Characterized Avalanche Voltage and Current 

## **Absolute Maximum Ratings** 

||**Parameter**|**Max.**|**Units**|
|---|---|---|---|
|VDS|Drain-to-Source Voltage|20|V|
|VGS|Gate-to-Source Voltage|± 20||
|ID@ TA= 25°C|Continuous Drain Current, VGS@ 10V|8.9|A|
|ID@ TA= 70°C|Continuous Drain Current, VGS@ 10V|7.1||
|IDM|Pulsed Drain Current|71||
|PD@TA= 25°C|Power Dissipation|2.0|W|
|PD@TA= 70°C|Power Dissipation|1.3||
||Linear Derating Factor|0.016|W/°C|
|TJ<br>TSTG|Operating Junction and<br>Storage Temperature Range|-55  to + 150|°C|



## **Thermal Resistance** 

**Parameter Typ. Max. Units** RθJL Junction-to-Drain Lead ––– 42 °C/W ~~Po~~ RθJA Junction-to-Ambient ––– 62.5 ~~or~~ 

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**Static @ TJ = 25°C (unless otherwise specified)** 

||**Parameter**|**Min.**<br>~~es~~|**Typ.**|**Max. **<br>~~QO~~|**Units**<br>~~QO~~|**Conditions**<br>~~QO~~|
|---|---|---|---|---|---|---|
|BVDSS|Drain-to-Source Breakdown Voltage<br>~~Rs~~|20<br>~~Rs~~<br>~~es~~|–––<br>~~Rs~~|–––<br>~~Rs~~<br>~~QO~~|V<br>~~Rs~~<br>~~QO~~|VGS= 0V, ID= 250µA<br>~~Rs~~<br>~~QO~~|
|∆ΒVDSS/∆TJ|Breakdown Voltage Temp. Coefficient<br>~~Rs~~<br>~~RD~~|–––<br>~~Rs~~<br>~~es~~<br>~~RD~~|0.015<br>~~Rs~~|–––<br>~~Rs~~<br>~~QO~~|V/°C<br>~~Rs~~<br>~~QO~~<br>~~GO~~|Reference to 25°C, ID= 1mA<br>~~Rs~~<br>~~QO~~<br>~~GO~~|
|RDS(on)|Static Drain-to-Source On-Resistance<br>~~RD~~<br>~~LE~~<br>~~H+~~|–––<br>~~RD~~<br>~~LE~~|14.6<br>~~LE~~|18.3<br>~~LE~~|mΩ<br>~~GO~~<br>~~LE~~<br>~~44~~|VGS= 10V, ID= 8.9A<br>~~GO~~<br>~~LE~~|
|||–––<br>~~LE~~<br>~~+4+~~|21.6<br>~~LE~~<br>~~PT~~<br>~~4+~~|27<br>~~LE~~<br>~~PT~~<br>~~4+44~~||VGS= 4.5V, ID= 7.1A<br>~~LE~~<br>~~6)~~|
|VGS(th)|Gate Threshold Voltage<br>~~H+~~|1.7<br>~~+4+~~|–––<br>~~PT~~<br>~~4+~~|2.5<br>~~PT~~<br>~~4+44~~|V<br>~~44~~|VDS= VGS, ID= 250µA<br>~~6)~~<br>~~LE~~|
|∆VGS(th)/∆TJ|Gate Threshold Voltage Coefficient<br>~~H+~~<br>~~a~~|–––<br>~~+4+~~<br>~~a~~|-4.8<br>~~PT~~<br>~~4+~~<br>~~a~~|–––<br>~~PT~~<br>~~4+44~~<br>~~a~~<br>~~LE~~|mV/°C<br>~~44~~<br>~~a~~<br>~~LE~~||
|IDSS|Drain-to-Source Leakage Current<br>~~H+~~<br>~~ee~~|–––<br>~~+ 4+~~<br>~~ee~~|–––<br>~~PT~~<br>~~4+~~<br>~~ee~~|1.0<br>~~PT~~<br>~~4+ 44~~<br>~~ee~~<br>~~LE~~|µA<br>~~44~~<br>~~ee~~<br>~~LE~~|VDS= 16V, VGS= 0V<br>~~6)~~<br>~~ee~~<br>~~LE~~|
|||–––<br>~~ee~~|–––<br>~~ee~~<br>~~PT~~|150<br>~~ee~~<br>~~LE~~<br>~~PT~~||VDS= 16V, VGS= 0V, TJ= 125°C<br>~~ee~~<br>~~LE~~|
|IGSS|Gate-to-Source Forward Leakage<br>~~a~~|–––<br>~~a~~<br>~~a~~|–––<br>~~a~~<br>~~ee~~|100<br>~~LE~~<br>~~a~~|nA<br>~~LE~~<br>~~a~~<br>~~CO~~|VGS= 20V<br>~~LE~~<br>~~a~~|
||Gate-to-Source Reverse Leakage<br>~~a~~|–––<br>~~a~~<br>~~a~~|–––<br>~~a~~<br>~~ee~~<br>~~I~~|-100<br>~~a~~<br>~~I~~||VGS= -20V<br>~~a~~<br>~~CO~~|
|gfs|Forward Transconductance<br>~~a~~<br>~~DD~~|12<br>~~a~~<br>~~a~~<br>~~DD~~|–––<br>~~a~~<br>~~ee~~<br>~~DD~~<br>~~I~~|–––<br>~~a~~<br>~~DD~~<br>~~I~~|S<br>~~a~~<br>~~DD~~<br>~~CO~~|VDS= 10V, ID= 7.1A<br>~~a~~<br>~~DD~~<br>~~CO~~|
|Qg|Total Gate Charge<br>~~a~~|–––<br>~~a~~|4.9<br>~~I~~<br>~~a~~|7.4<br>~~I ~~<br>~~a~~|nC<br> ~~CO~~|See Fig. 6<br>ID= 7.1A<br>VGS= 4.5V<br>VDS= 10V<br>~~CO~~|
|Qgs1|Pre-Vth Gate-to-Source Charge|–––|1.8|–––|||
|Qgs2|Post-Vth Gate-to-Source Charge<br>~~a~~|–––<br>~~a~~|0.61<br>~~a~~|–––<br>~~a~~|||
|Qgd|Gate-to-Drain Charge|–––|1.7|–––|||
|Qgodr|Gate Charge Overdrive<br>~~a~~|–––<br>~~a~~|0.79<br>~~a~~|–––<br>~~a~~|||
|Qsw|Switch Charge (Qgs2+ Qgd)|–––|2.3|–––|||
|Qoss|Output Charge<br>~~GO~~|–––<br>~~GO~~|2.7<br>~~GO~~|–––<br>~~GO~~|nC<br>~~GO~~|VDS= 10V, VGS= 0V<br>~~GO~~|
|td(on)|Turn-On DelayTime|–––|6.0|–––|ns|Clamped Inductive Load<br>VDD= 4.5V, VGS= 4.5V<br>ID= 7.1A|
|tr|Rise Time<br>~~a~~|–––<br>~~a~~|12<br>~~a~~|–––<br>~~a~~|||
|td(off)|Turn-Off DelayTime|–––|7.1|–––|||
|tf|Fall Time<br>~~a~~|–––<br>~~a~~|3.6<br>~~a~~|–––<br>~~a~~|||
|Ciss|Input Capacitance|–––|540|–––|pF|VGS= 0V<br>VDS= 10V<br>ƒ= 1.0MHz|
|Coss|Output Capacitance<br>~~a~~|–––<br>~~a~~<br>~~es~~|180<br>~~a~~<br>~~ee~~|–––<br>~~a~~|||
|Crss|Reverse Transfer Capacitance<br>~~es~~|–––<br>~~es~~<br>~~es~~|91<br>~~es~~<br>~~ee~~|–––<br>~~es~~|||



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100 100<br>VGS VGS<br>TOP           10V TOP           10V<br>| | eae 8.0V g h 8.0V<br>TE” | LU 5.5V Ee) ae. 5.5V<br>10<br>4.5V 4.5V<br>e ee 3.5V3.0V Y) 3.5V3.0V<br>aesiiiiemncil 2.8V 10 | Gf | _ 2.8V<br>1 L e BOTTOM 2.5V 7 BOTTOM 2.5V<br>= ==.<br>—— — = = ’ (iy A<br>tT A a<br>0.1<br>| 1 a T til LTH<br>2.5V<br>2.5V<br>0.01 a P y See ttt PEEeet Ta<br>= == ae n ete<br>≤60µs PULSE WIDTH ≤60µs PULSE WIDTH<br>Tj = 25°C<br>Tj = 150°C<br>0.001 Ae FA 0.1 | | LH |<br>0.1 1 10 100 0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)<br>Fig 1.   Typical Output Characteristics Fig 2.   Typical Output Characteristics<br>100 1.5<br>ID = 8.9A<br>ae<br>pf ft lm VGS = 10V<br>a eee ee eee ee ee V4<br>10<br>i Ae pz<br>eS TJ = 150°C Ll| es ee 1.0 LZ4<br>T = 25°C<br>J<br>1<br>iee ieeseae hzee<br>VDS = 10V<br>≤60µs PULSE WIDTH<br>0.1 0.5<br>1 2 3 4 5 6 7 -60 -40 -20 0 20 40 60 80 100 120 140 160<br>TJ , Junction Temperature (°C)<br>VGS, Gate-to-Source Voltage (V)<br>)(Α<br>ID, Drain-to-Source Current<br>ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

**Fig 4.** Normalized On-Resistance vs. Temperature 

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10000 6.0<br>VGS   = 0V,       f = 1 MHZ I = 7.1A<br>Ciss   = C gs + Cgd,  C ds SHORTED D<br>Crss   = Cgd  5.0 VDS= 16V<br>Coss  = Cds + Cgd VDS= 10V<br>ae Ht tH<br>Z Pe<br>1000 4.0<br>ro l e<br>Ciss<br>a a ee ee 3.0<br>Coss<br>100 -= —— Crss 0 ee 2.0 P AF yy<br>S em anal 1.0 D anneen<br>aeeel A EE<br>10 0.0<br>1 10 100 0 1 2 3 4 5 6 7<br>VDS, Drain-to-Source Voltage (V)  QG  Total Gate Charge (nC)<br>C, Capacitance(pF)<br>VGS, Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 5.** Typical Capacitance vs. Drain-to-Source Voltage 

**Fig 6.** Typical Gate Charge Vs. Gate-to-Source Voltage 

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100.00<br>TJ = 150°C<br>10.00<br>es—— ee,ee<br>Se<br>TJ = 25°C<br>1.00 SSS =<br>VGS = 0V<br>0.10 | oie if it | ft<br>0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6<br>VSD, Source-to-Drain Voltage (V)<br>ISD, Reverse Drain Current (A)<br>**----- End of picture text -----**<br>


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1000<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)<br>100 P|<br>Pr T YI TIANO  N a S<br>10 C EMA ECCT<br>100µsec<br>1msec<br>1<br>TA = 25°C eS 10msec wl<br>Tj = 150°C PU aTTT]<br>Single Pulse<br>0.1 aPEa|CE CT<br>0 1 10 100 1000<br>VDS, Drain-to-Source Voltage (V)<br>ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

**Fig 8.** Maximum Safe Operating Area 

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9 3.0<br>8 P Y<br>7 N ae ee 2.5<br>6<br>e e Nee<br>P ot<br>5 dE OK<br>2.0<br>4 P ot ID = 250µA<br>3 P | tTANN<br>1.5<br>2 e e ee<br>1 PF | | |UN<br>0 FP | | NN 1.0<br>-75 -50 -25 0 25 50 75 100 125 150<br>25 50 75 100 125 150<br> TA , Ambient Temperature (°C) TJ , Temperature ( °C )<br>VGS(th) Gate threshold Voltage (V)<br>ID,  Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 9.** Maximum Drain Current vs. Ambient Temperature 

**Fig 10.** Threshold Voltage vs. Temperature 

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100<br>D = 0.50<br>0.20<br>10<br>0.10<br>1 T 0.020.050.01 S τJ τJτ1τ1 R1 R1 τ2 τR22 R2 Rτ33 R τ3 3 τR4τ4R4 4 τCτ Ri (°C/W)   3.68799    0.0003492.18971    0.00524634.7298    0.470610 τi (sec)<br>ct a Ci=  Ci τi/Ri i/Ri 21.8971    13.52000<br>0.1 P DM<br>SINGLE PULSE t 1<br>( THERMAL RESPONSE ) t 2<br>2 G ee Notes:<br>1. Duty factor D = t   / t 1 2<br>2. Peak T J = P DM x  Z thJA + T A<br>0.01 F e eeie<br>1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100<br>t1 , Rectangular Pulse Duration (sec)<br>Thermal Response ( Z thJA )<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 

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40 60<br>ID = 8.9A ID<br>TOP         2.4A<br>35 50<br>2.9A<br>BOTTOM 7.1A<br>30 LL UNITR ELEEt 40 WA ep<br>25 30<br>T EIN ELL T = 125°C A<br>J<br>20 20<br>ty TJ = 25°C N XE TT<br>15 10<br>Pt SNL S ONG EEE<br>10 PETE ELE 0 PELE SSL<br>1 2 3 4 5 6 7 8 9 10 25 50 75 100 125 150<br>Starting TJ , Junction Temperature (°C)<br>VGS, Gate -to -Source Voltage  (V)<br>Fig 12.  On-Resistance vs. Gate Voltage Fig 13.   Maximum Avalanche Energy<br>vs. Drain Current<br>Current Regulator<br>Same Type as D.U.T.<br>V(BR)DSS<br>15V tp 50KΩ<br>12V .2µF<br>_ a .3µF<br>VDS L DRIVER +<br>D.U.T. -VDS<br>RG D.U.T +<br>20VVGS IAS - [V][DD] A VGS<br>tp 0.01 [Ω] IAS 3mA<br>: - Ont.<br>Fig 14.   Unclamped Inductive Test Circuit CurrentIGSampling ResistorsID<br>and Waveform<br>LD Fig 15.   Gate Charge Test Circuit<br>VDS V<br>DS<br>+ 90%<br>VDD -<br>D.U.T 10%<br>I VGS VGS<br>Pulse Width < 1µs<br>Duty Factor < 0.1%<br>td(on) tr td(off) tf<br>EAS , Single Pulse Avalanche Energy (mJ)<br>)Ω<br>RDS(on),  Drain-to -Source On Resistance (m<br>**----- End of picture text -----**<br>


**Fig 16.** Switching Time Test Circuit 

**Fig 17.** Switching Time Waveforms 

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Driver Gate Drive<br>P.W.<br>D.U.T + {+ P.W. Period ——— + D = —— Period<br>Circuit Layout Considerations V | GS=10V<br>   •<br>(4) [©)] ) t<br>•<br>| =] - LowGround StrayPla I n eductance<br>•   Low Leakage Inductance a) D.U.T. ISD Waveform<br>+<br>Reverse<br>Recovery Body Diode Forward<br>oi - [l] Current Transformer - ® + Current r Current di/dt NN<br>® D.U.T. VDS Waveform Diode Recoverydv/dt ‘<br>00 +> VDD<br>ma<br>•   Re-Applied<br>•   Driver same type as D.U.T. + Voltage Body Diode  Forward Drop<br>Re ( 4 •   dv/dt controlled by Rg Vop - Inductor Curent<br>•<br>D.U.T. - Device Under Test SOO |<br>Isp controlled by Duty Factor "D" @ Ripple  ≤ 5% ISD<br>* Vg = 5V for Logic Level Devices<br>Fig 15.  Peak Diode Recovery dv/dt Test Circuit or N-Channel<br>HEXFET ® Power MOSFETs<br>Id<br>Vds f'<br>1 Vgs<br>I<br>1<br>1<br>1<br>1<br>I<br>1<br>|<br>i 1<br>|<br>Vgs(th) HH [1] 1<br>iH [1] 1<br>HH [1] 1<br>| \<br>\ H ! ! |<br>> <1) _ wm I dr_| i<br>Qgs1 Qgs2 Qgd Qgodr<br>**----- End of picture text -----**<br>


**Fig 16.** Gate Charge Waveform 

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## **Power MOSFET Selection for Non-Isolated DC/DC Converters** 

## **Control FET** 

## **Synchronous FET** 

The power loss equation for Q2 is approximated by; 

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This can be expanded and approximated by; 

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*dissipated primarily in Q1. 

For the synchronous MOSFET Q2, Rds(on) is an important characteristic; however, once again the importance of gate charge must not be overlooked since it impacts three critical areas. Under light load the MOSFET must still be turned on and off by the control IC so the gate drive losses become much more significant.  Secondly, the output charge Qoss and reverse recovery charge Qrr both generate losses that are transfered to Q1 and increase the dissipation in that device. Thirdly, gate charge will impact the MOSFETs’ susceptibility to Cdv/dt turn on. 

The drain of Q2 is connected to the switching node of the converter and therefore sees transitions between ground and Vin. As Q1 turns on and off there is a rate of change of drain voltage dV/dt which is capacitively coupled to the gate of  Q2 and can induce a voltage spike on the gate that is sufficient to turn the MOSFET on, resulting in shoot-through current . The ratio of Q /Q must be minimized to reduce the gd gs1 potential for Cdv/dt turn on. 

Figure A:  Qoss Characteristic 

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## **SO-8 Package Outline** (Mosfet & Fetky) 

Dimensions are shown in milimeters (inches) 

## SO-8 Part Marking Information 

**Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/** 

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## **SO-8 Tape and Reel** 

Dimensions are shown in millimeters (inches) 

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TERMINAL NUMBER 1<br>soos) |<br>12.3 ( .484 )<br>11.7 ( .461 )<br>8.1 ( .318 )<br>7.9 ( .312 ) | FEED DIRECTION ss<br>**----- End of picture text -----**<br>


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NOTES:<br>**----- End of picture text -----**<br>


1.   CONTROLLING DIMENSION : MILLIMETER. 

2.   ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 

3.   OUTLINE CONFORMS TO EIA-481 & EIA-541. 

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 330.00<br>(12.992)<br>  MAX.<br>PY<br>14.40 ( .566 )<br>12.40 ( .488 )<br>**----- End of picture text -----**<br>


NOTES : 

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1. CONTROLLING DIMENSION : MILLIMETER.<br>**----- End of picture text -----**<br>


2. OUTLINE CONFORMS TO EIA-481 & EIA-541. 

**Note: For the most current drawing please refer to IR website at http://www.irf.com/package/** 

Repetitive rating;  pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 0.59mH, RG = 25Ω, IAS = 7.1A. Pulse width ≤ 400µs; duty cycle ≤ 2%. When mounted on 1 inch square  copper board. Rθ is measured at TJ of approximately 90°C. 

Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualifications Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 

TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 07/2008 

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