IRF8910TRPBF
Dual MOSFET, N Channel, 20 V, 20 V, 10 A, 10 A, 0.0107 ohm
- Manufacturer: INFINEON
- Product type: Dual MOSFETs
- Transistor Polarity:Dual N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.0107ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (17-Jan-2023)
- No. of Pins: 8Pins
- Channel Type: N Channel
- Product Range: HEXFET Series
- Qualification: -
- Transistor Case Style: SOIC
- Operating Temperature Max: 150°C
- Power Dissipation N Channel: 2W
- Power Dissipation P Channel: 2W
- Drain Source Voltage Vds N Channel: 20V
- Drain Source Voltage Vds P Channel: 20V
- Continuous Drain Current Id N Channel: 10A
- Continuous Drain Current Id P Channel: 10A
- Drain Source On State Resistance N Channel: 0.0107ohm
- Drain Source On State Resistance P Channel: 0.0107ohm
| Delivery and price | |
|---|---|
| Units per pack | 10 |
| Price | 0.568 € |
| Current stock | 10+ |
| Lead time | 30 days |
## PD-95673A IRF8910PbF
HEXFET Power MOSFET
## **Applications**
Dual SO-8 MOSFET for POL converters in desktop, servers, graphics cards, game consoles and set-top box Lead-Free
## **Benefits**
Very Low RDS(on) at 4.5V VGS Ultra-Low Gate Impedance Fully Characterized Avalanche Voltage and Current 20V VGS Max. Gate Rating
|**VDSS**|**RDS(on) max**|**ID**|
|---|---|---|
|**20V**|**13.4m @VGS = 10V**|**10A**|
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S1 1 8 D1<br>G1 2 7 D1<br>S2 3 6 D2<br>G2 4 5 D2<br>SO-8<br>Top View<br>**----- End of picture text -----**<br>
## **Absolute Maximum Ratings**
||**Parameter**|**Max.**|**Units**|
|---|---|---|---|
|VDS|Drain-to-Source Voltage|20|V|
|VGS|Gate-to-Source Voltage|± 20||
|ID@ TA= 25°C|Continuous Drain Current, VGS@ 10V|10|A|
|ID@ TA= 70°C|Continuous Drain Current, VGS@ 10V|8.3||
|IDM|Pulsed Drain Current|82||
|PD@TA= 25°C|Power Dissipation|2.0|W|
|PD@TA= 70°C|Power Dissipation|1.3||
||Linear Derating Factor|0.016|W/°C|
|TJ<br>TSTG|Linear Derating Factor<br>Operating Junction and<br>Storage Temperature Range|-55 to + 150|°C|
Notes oO) through ) are on page 10 www.irf.com
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**Static @ TJ = 25°C (unless otherwise specified)**
||**Parameter**|**Min.**|**Typ.**|**Max. **|**Units**|**Conditions**|
|---|---|---|---|---|---|---|
|BVDSS|Drain-to-Source Breakdown Voltage<br>~~DQ~~|20<br>~~DQ~~|–––<br>~~DQ~~|–––<br>~~DQ~~|V<br>~~DQ~~|VGS= 0V, ID= 250µA<br>~~DQ~~|
|∆ΒVDSS/∆TJ|Breakdown Voltage Temp. Coefficient<br>~~GD~~|–––<br>~~GD~~|0.015|–––<br>~~QO~~<br>~~E~~|V/°C<br>~~QO~~<br>~~E~~|Reference to 25°C, ID= 1mA<br>~~QO~~<br>~~EE~~|
|RDS(on)|Static Drain-to-Source On-Resistance<br>~~Se~~<br>~~H+~~|–––<br>~~Se~~|10.7<br>~~Se~~|13.4<br>~~Se~~<br>~~E~~|mΩ<br>~~Se~~<br>~~E~~<br>~~44~~|VGS= 10V, ID= 10A<br>~~Se~~<br>~~EE~~|
|||–––<br>~~Se~~<br>~~+4+~~|14.6<br>~~Se~~<br>~~PT~~<br>~~4+~~|18.3<br>~~Se~~<br>~~E~~<br>~~PT~~<br>~~4+44~~||VGS= 4.5V, ID= 8.0A<br>~~Se~~<br>~~EE~~<br>~~6)~~|
|VGS(th)|Gate Threshold Voltage<br>~~H+~~|1.65<br>~~+4+~~|–––<br>~~PT~~<br>~~4+~~|2.55<br>~~E~~<br>~~PT~~<br>~~4+44~~|V<br>~~E~~<br>~~44~~|VDS= VGS, ID= 250µA<br>~~EE~~<br>~~6)~~|
|∆VGS(th)/∆TJ|Gate Threshold Voltage Coefficient<br>~~H+~~<br>~~a~~|–––<br>~~+4+~~<br>~~a~~|-4.8<br>~~PT~~<br>~~4+~~<br>~~a~~|–––<br>~~PT~~<br>~~4+44~~<br>~~a~~|mV/°C<br>~~44~~<br>~~a~~||
|IDSS|Drain-to-Source Leakage Current<br>~~H+~~<br>~~EL~~|–––<br>~~+ 4+~~<br>~~EL~~<br>~~|~~|–––<br>~~PT~~<br>~~4+~~<br>~~EL~~<br>~~|~~|1.0<br>~~PT~~<br>~~4+ 44~~<br>~~EL~~|µA<br>~~44~~<br>~~EL~~|VDS= 16V, VGS= 0V<br>~~6)~~<br>~~EL~~|
|||–––<br>~~EL~~<br>~~|~~|–––<br>~~EL~~<br>~~|~~|150<br>~~EL~~||VDS= 16V, VGS= 0V, TJ= 125°C<br>~~EL~~|
|IGSS|Gate-to-Source Forward Leakage<br>~~EL~~<br>~~a~~|–––<br>~~EL~~<br>~~|~~<br>~~a~~<br>~~a~~|–––<br>~~EL~~<br>~~|~~<br>~~a~~<br>~~ee~~|100<br>~~EL~~<br>~~a~~|nA<br>~~EL~~<br>~~a~~<br>~~Q~~|VGS= 20V<br>~~EL~~<br>~~a~~|
||Gate-to-Source Reverse Leakage<br>~~a~~|–––<br>~~a~~<br>~~a~~<br>~~es~~|–––<br>~~a~~<br>~~ee~~|-100<br>~~a~~<br>~~Q~~||VGS= -20V<br>~~a~~<br>~~QO~~|
|gfs<br>~~a~~|Forward Transconductance<br>~~a~~<br>~~Rs~~<br>~~a~~|24<br>~~a~~<br>~~a~~<br>~~Rs~~<br>~~es~~<br>~~es~~<br>|–––<br>~~a~~<br>~~ee~~<br>~~Rs~~<br>|–––<br>~~a~~<br>~~Rs~~<br>~~Q~~<br>|S<br>~~a~~<br>~~Rs~~<br>~~Q~~|VDS= 10V, ID= 8.2A<br>~~a~~<br>~~Rs~~<br>~~QO~~|
|Qg<br>~~a~~|Total Gate Charge<br>~~Rs~~<br>~~ee~~<br>~~a~~|–––<br>~~Rs~~<br>~~es~~<br>~~ee~~<br>~~es~~<br>|7.4<br>~~Rs~~<br>~~ee~~<br>|11<br>~~Rs~~<br>~~Q~~<br>~~ee~~<br>|nC<br>~~Rs~~<br>~~Q~~<br>~~Q~~|See Fig. 6<br>ID= 8.2A<br>VGS= 4.5V<br>VDS= 10V<br>~~Rs~~<br>~~QO~~<br>~~QO~~|
|Qgs1<br>~~a~~|Pre-Vth Gate-to-Source Charge<br>~~a~~|–––<br>~~es~~<br>|2.4<br>|–––<br>|||
|Qgs2<br>~~a~~<br>~~a~~|Post-Vth Gate-to-Source Charge<br>~~aa~~<br>~~a~~|–––<br>~~es~~<br>~~a~~<br>|0.80<br>~~a~~<br>|–––<br>~~a~~<br>|||
|Qgd<br>~~a~~|Gate-to-Drain Charge<br>~~a~~|–––<br>|2.5<br>|–––<br>|||
|Qgodr<br>~~a~~|Gate Charge Overdrive<br>~~aa~~|–––<br>~~a~~<br>~~es~~|1.7<br>~~a~~|–––<br>~~a~~|||
|Qsw|Switch Charge (Qgs2+ Qgd)<br>~~es~~<br>~~OD~~|–––<br>~~es~~<br>~~es~~<br>~~OD~~|3.3<br>~~es~~|–––<br>~~es~~<br>~~Q~~|||
|Qoss|Output Charge<br>~~es~~<br>~~OD~~|–––<br>~~es~~<br>~~es~~<br>~~OD~~|4.4<br>~~es~~|–––<br>~~es~~<br>~~Q~~|nC<br>~~Q~~|VDS= 10V, VGS= 0V<br>~~QO~~|
|td(on)|Turn-On DelayTime<br>~~OD~~|–––<br>~~OD~~|6.2|–––<br>~~Q~~|ns<br>~~Q~~|Clamped Inductive Load<br>VDD= 10V, VGS= 4.5V<br>ID= 8.2A<br>~~QO~~|
|tr<br>~~a~~|Rise Time<br>~~a~~<br>~~a~~|–––<br>~~a~~<br>|10<br>~~a~~<br>|–––<br>~~a~~<br>|||
|td(off)<br>~~a~~|Turn-Off DelayTime<br>~~a~~|–––<br>|9.7<br>|–––<br>|||
|tf<br>~~a~~<br>~~a~~|Fall Time<br>~~aa~~<br>~~a~~|–––<br>~~a~~<br>|4.1<br>~~a~~<br>|–––<br>~~a~~<br>|||
|Ciss<br>~~a~~|Input Capacitance<br>~~a~~|–––<br>|960<br>|–––<br>|pF<br>|VGS= 0V<br>VDS= 10V<br>ƒ= 1.0MHz<br>|
|Coss<br>~~a~~<br>~~a~~|Output Capacitance<br>~~aa~~<br>~~a~~|–––<br>~~a~~<br>|300<br>~~a~~<br>|–––<br>~~a~~<br>|||
|Crss<br>~~a~~|Reverse Transfer Capacitance<br>~~a~~|–––<br>|160<br>|–––<br>|||
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100<br>VGS VGS<br>10V P EW TOP 10V<br>8.0V 8.0V<br>5.5V HI 5.5V<br>4.5V mal, anil 4.5V<br>3.5V 3.5V<br>3.0V Uf 3.0V<br>2.8V 2.8V<br>2.5V 10 V Alan BOTTOM 2.5V<br>| AZAthri oh<br>S e 2.5V lll<br>i La<br>≤60µs PULSE WIDTH<br>1 a Tj = 150°C<br>100 | 0.1 A 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 2. Typical Output Characteristics<br>1.5<br>ID = 10A<br>VGS = 10V<br>1.0<br>LZ<br>ee<br>0.5<br>6 -60 -40 -20 0 20 40 60 80 100 120 140 160<br>TJ , Junction Temperature (°C)<br>RDS(on) , Drain-to-Source On Resistance (Normalized)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>
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100<br>VGS<br>e e TOP 10V<br>8.0V<br>- 5.5V<br>Aaa<br>4.5V<br>10 3.5V<br>S e 3.0V<br>2.8V<br>1 ne BOTTOM 2.5V<br>2.5V<br>a<br>0.1<br>e m<br>= e<br>| ≤60µs PULSE WIDTH i<br>Tj = 25°C<br>0.01 Baie Baaiil|<br>0.1 PEA 1 10 rr 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 1. Typical Output Characteristics<br>100<br>ee es al<br>10<br>TJ = 150°C<br>ty a ee ee<br>1 TJ = 25°C<br>ee 9 ee ee ee ee ee<br>VDS = 10V<br>0.1 || ≤60µs PULSE WIDTH<br>1 2 3 4 5 6<br>VGS, Gate-to-Source Voltage (V)<br>)(Α<br>ID, Drain-to-Source Current<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>
**Fig 3.** Typical Transfer Characteristics
**Fig 4.** Normalized On-Resistance vs. Temperature
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10000 6.0<br>VGS = 0V, f = 1 MHZ<br>Ciss = C gs + Cgd, C ds SHORTED ID= 8.2A<br>Crss = Cgd 5.0 VDS= 16V<br>Coss = Cds + Cgd VDS= 10V<br>_ A<br>a 4.0 LZ<br>mem) t t . Sez<br>1000 Ciss 3.0<br>CE M) | C ooeeeerT<br>Coss 2.0<br>= e ee 1.0 Y L ti yy dd.<br>EL Crss<br>100 PE re | II 0.0 ZERRae<br>1 10 100 0 1 2 3 4 5 6 7 8 9 10<br>VDS, Drain-to-Source Voltage (V) QG Total Gate Charge (nC)<br>VGS, Gate-to-Source Voltage (V)<br>C, Capacitance(pF)<br>**----- End of picture text -----**<br>
**Fig 5.** Typical Capacitance vs. Drain-to-Source Voltage
**Fig 6.** Typical Gate Charge Vs. Gate-to-Source Voltage
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100.00<br>TJ = 150°C<br>10.00<br>1.00<br>TJ = 25°C<br>0.10<br>VGS = 0V<br>0.01<br>0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6<br>VSD, Source-to-Drain Voltage (V)<br>ISD, Reverse Drain Current (A)<br>**----- End of picture text -----**<br>
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1000<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)<br>100<br>10<br>100µsec<br>1msec<br>1 10msec<br>TA = 25°C<br>Tj = 150°C<br>Single Pulse<br>0.1<br>0 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>
**Fig 7.** Typical Source-Drain Diode Forward Voltage
**Fig 8.** Maximum Safe Operating Area
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10 2.5<br>e e<br>9<br>8 m S OL R LE<br>7<br>2.0<br>P o INE P E RALELLEee<br>6<br>ID = 250µA<br>5<br>4 = o NS<br>1.5<br>3<br>21 P EN T TTN<br>0 1.0<br>-75 -50 -25 0 25 50 75 100 125 150<br>25 50 75 100 125 150<br> TA , Ambient Temperature (°C) TJ , Temperature ( °C )<br>Fig 9. Maximum Drain Current vs. Fig 10. Threshold Voltage vs. Temperature<br>Ambient Temperature<br>100<br>D = 0.50<br>10 0.20<br>0.10<br>0.05<br>Ri (°C/W) τi (sec)<br>1 0.02 R1 R1 R2 R2 R3 R3 R4 R4 R5R5 1.2647 0.000091<br>0.01 τJ τJ τCτC 2.0415 0.000776<br>H H τ1 τ1 τ2τ2 τ3τ3 τ4τ4 τ5τ5 18.970 0.188739<br>ie [DD el<br>Ci= τi/Ri 23.415 0.757700<br>0.1 Ci= τi/Ri<br>SINGLE PULSE 16.803 25.10000<br>( THERMAL RESPONSE ) Notes:<br>1. Duty Factor D = t1/t2<br>A A 2. Peak Tj = P dm x Zthja + Tc il<br>0.01<br>1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100<br>t1 , Rectangular Pulse Duration (sec)<br>ID, Drain Current (A)<br>VGS(th) Gate threshold Voltage (V)<br>Thermal Response ( Z thJA )<br>**----- End of picture text -----**<br>
**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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40.00 80<br>ID = 10A ID<br>70 TOP 3.4A<br>4.9A<br>30.00 [ IG ] 60 = BOTTOM 8.2A<br>50<br>20.00 N PT T = 125°C yy} 40 NA REERaan<br>J<br>t e] 30 f o<br>10.00 oNeeee TJ = 25°C s 20 NN EN oe<br>10<br>C PF SSS<br>0.00 0<br>3 4 5 6 7 8 9 10 25 50 75 100 125 150<br>Starting TJ , Junction Temperature (°C)<br>VGS, Gate -to -Source Voltage (V)<br>Fig 12. On-Resistance vs. Gate Voltage Fig 13. Maximum Avalanche Energy<br>EAS , Single Pulse Avalanche Energy (mJ)<br>)Ω<br>RDS(on), Drain-to -Source On Resistance (m<br>**----- End of picture text -----**<br>
vs. Drain Current
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Current Regulator<br>Same Type as D.U.T.<br>50KΩ<br>12V IT: .2µF<br>.3µF<br>+<br>D.U.T. -VDS<br>VGS<br>3mA<br>& |<br>Cie<br>IG ID<br>Current Sampling Resistors<br>Fig 15. Gate Charge Test Circuit<br>V<br>DS<br>90%<br>10%<br>V<br>GS<br>td(on) tr td(off) tf<br>**----- End of picture text -----**<br>
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V(BR)DSS<br>15V 9 tp<br>VDS L DRIVER<br>RG D.U.T +<br>IAS - [V][DD] A<br>20VVGS<br>tp 0.01 [Ω] IAS<br>& / |<br>-<br>**----- End of picture text -----**<br>
**Fig 14.** Unclamped Inductive Test Circuit and Waveform
**Fig 15.** Gate Charge Test Circuit
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LD<br>VDS<br>+<br>VDD -<br>D.U.T<br>VGS<br>Pulse Width < 1µs<br>Duty Factor < 0.1%<br>**----- End of picture text -----**<br>
**Fig 16.** Switching Time Test Circuit
**Fig 17.** Switching Time Waveforms
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Driver Gate Drive<br>P.W.<br>D.U.T + {+ P.W. Period ——— + D = —— Period<br>Circuit Layout Considerations V | GS=10V<br> •<br>(4) [©)] ) t<br>•<br>| =] - LowGround StrayPla I n eductance<br>• Low Leakage Inductance a) D.U.T. ISD Waveform<br>+<br>Reverse<br>Recovery Body Diode Forward<br>oi - [l] Current Transformer - ® + Current r Current di/dt NN<br>® D.U.T. VDS Waveform Diode Recoverydv/dt ‘<br>00 +> VDD<br>ma<br>• Re-Applied<br>• Driver same type as D.U.T. + Voltage Body Diode Forward Drop<br>Re ( 4 • dv/dt controlled by Rg Vop - Inductor Curent<br>•<br>D.U.T. - Device Under Test SOO |<br>Isp controlled by Duty Factor "D" @ Ripple ≤ 5% ISD<br>* Vg = 5V for Logic Level Devices<br>Fig 15. Peak Diode Recovery dv/dt Test Circuit or N-Channel<br>HEXFET ® Power MOSFETs<br>Id<br>Vds f'<br>1 Vgs<br>I<br>1<br>1<br>1<br>1<br>I<br>1<br>|<br>i 1<br>|<br>Vgs(th) HH [1] 1<br>iH [1] 1<br>HH [1] 1<br>| \<br>\ H ! ! |<br>> <1) _ wm I dr_| i<br>Qgs1 Qgs2 Qgd Qgodr<br>**----- End of picture text -----**<br>
**Fig 16.** Gate Charge Waveform
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## **Power MOSFET Selection for Non-Isolated DC/DC Converters**
## **Control FET**
## **Synchronous FET**
The power loss equation for Q2 is approximated by;
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This can be expanded and approximated by;
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*dissipated primarily in Q1.
For the synchronous MOSFET Q2, Rds(on) is an important characteristic; however, once again the importance of gate charge must not be overlooked since it impacts three critical areas. Under light load the MOSFET must still be turned on and off by the control IC so the gate drive losses become much more significant. Secondly, the output charge Qoss and reverse recovery charge Qrr both generate losses that are transfered to Q1 and increase the dissipation in that device. Thirdly, gate charge will impact the MOSFETs’ susceptibility to Cdv/dt turn on.
The drain of Q2 is connected to the switching node of the converter and therefore sees transitions between ground and Vin. As Q1 turns on and off there is a rate of change of drain voltage dV/dt which is capacitively coupled to the gate of Q2 and can induce a voltage spike on the gate that is sufficient to turn the MOSFET on, resulting in shoot-through current . The ratio of Q /Q must be minimized to reduce the gd gs1 potential for Cdv/dt turn on.
Figure A: Qoss Characteristic
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## **SO-8 Package Outline** (Mosfet & Fetky)
Dimensions are shown in milimeters (inches)
## SO-8 Part Marking Information
**Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/**
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## SO-8 Tape and Reel
Dimensions are shown in milimeters (inches)
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TERMINAL NUMBER 1<br>eos) |<br>12.3 ( .484 )<br>11.7 ( .461 )<br>8.1 ( .318 )<br>7.9 ( .312 ) FEED DIRECTION<br>NOTES:<br>1. CONTROLLING DIMENSION : MILLIMETER.<br>2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).<br>3. OUTLINE CONFORMS TO EIA-481 & EIA-541.<br> 330.00<br>2 (12.992) MAX. \/<br>VAY<br>14.40 ( .566 )<br>12.40 ( .488 )<br>NOTES :<br>**----- End of picture text -----**<br>
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NOTES:<br>**----- End of picture text -----**<br>
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
## **Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/**
Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 0.57mH, RG = 25Ω, IAS = 8.2A. Pulse width ≤ 400µs; duty cycle ≤ 2%. When mounted on 1 inch square copper board. Rθ is measured at TJ of approximately 90°C.
Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR’s Web site.
**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 07/2008
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Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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